EA025124B1 - Преобразование высокоэнергетичных фотонов в электричество - Google Patents

Преобразование высокоэнергетичных фотонов в электричество Download PDF

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Publication number
EA025124B1
EA025124B1 EA201290620A EA201290620A EA025124B1 EA 025124 B1 EA025124 B1 EA 025124B1 EA 201290620 A EA201290620 A EA 201290620A EA 201290620 A EA201290620 A EA 201290620A EA 025124 B1 EA025124 B1 EA 025124B1
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EA
Eurasian Patent Office
Prior art keywords
layers
energy
layer
converter
photon
Prior art date
Application number
EA201290620A
Other languages
English (en)
Russian (ru)
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EA201290620A1 (ru
Inventor
Тосики Таджима
Михль Биндербауэр
Original Assignee
Трай Альфа Энерджи, Инк.
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Application filed by Трай Альфа Энерджи, Инк. filed Critical Трай Альфа Энерджи, Инк.
Publication of EA201290620A1 publication Critical patent/EA201290620A1/ru
Publication of EA025124B1 publication Critical patent/EA025124B1/ru

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/301Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to very short wavelength, e.g. being sensitive to X-rays, gamma-rays or corpuscular radiation
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01TMEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16Measuring radiation intensity
    • G01T1/28Measuring radiation intensity with secondary-emission detectors
    • GPHYSICS
    • G21NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21HOBTAINING ENERGY FROM RADIOACTIVE SOURCES; APPLICATIONS OF RADIATION FROM RADIOACTIVE SOURCES, NOT OTHERWISE PROVIDED FOR; UTILISING COSMIC RADIATION
    • G21H1/00Arrangements for obtaining electrical energy from radioactive sources, e.g. from radioactive isotopes, nuclear or atomic batteries
    • G21H1/04Cells using secondary emission induced by alpha radiation, beta radiation, or gamma radiation
    • GPHYSICS
    • G21NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21HOBTAINING ENERGY FROM RADIOACTIVE SOURCES; APPLICATIONS OF RADIATION FROM RADIOACTIVE SOURCES, NOT OTHERWISE PROVIDED FOR; UTILISING COSMIC RADIATION
    • G21H1/00Arrangements for obtaining electrical energy from radioactive sources, e.g. from radioactive isotopes, nuclear or atomic batteries
    • G21H1/06Cells wherein radiation is applied to the junction of different semiconductor materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00Individual photovoltaic cells, e.g. solar cells
    • H10F10/10Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/161Photovoltaic cells having only PN heterojunction potential barriers comprising multiple PN heterojunctions, e.g. tandem cells
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/10Semiconductor bodies
    • H10F77/12Active materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/10Semiconductor bodies
    • H10F77/14Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/40Optical elements or arrangements
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/542Dye sensitized solar cells

Landscapes

  • High Energy & Nuclear Physics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Molecular Biology (AREA)
  • Health & Medical Sciences (AREA)
  • Particle Accelerators (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • X-Ray Techniques (AREA)
  • Surface Treatment Of Glass (AREA)
  • Luminescent Compositions (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
EA201290620A 2010-01-08 2011-01-01 Преобразование высокоэнергетичных фотонов в электричество EA025124B1 (ru)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US29328210P 2010-01-08 2010-01-08
PCT/US2011/020001 WO2011084903A1 (en) 2010-01-08 2011-01-01 Conversion of high-energy photons into electricity

Publications (2)

Publication Number Publication Date
EA201290620A1 EA201290620A1 (ru) 2013-01-30
EA025124B1 true EA025124B1 (ru) 2016-11-30

Family

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Family Applications (1)

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EA201290620A EA025124B1 (ru) 2010-01-08 2011-01-01 Преобразование высокоэнергетичных фотонов в электричество

Country Status (20)

Country Link
US (3) US9324897B2 (enExample)
EP (1) EP2522033B1 (enExample)
JP (3) JP6097563B2 (enExample)
KR (1) KR101962974B1 (enExample)
CN (2) CN107123692B (enExample)
AR (1) AR079858A1 (enExample)
AU (2) AU2010339631B2 (enExample)
BR (1) BR112012016873B1 (enExample)
CA (1) CA2786590C (enExample)
EA (1) EA025124B1 (enExample)
ES (1) ES2705690T3 (enExample)
IL (2) IL220819A (enExample)
MX (1) MX2012007991A (enExample)
NZ (1) NZ601448A (enExample)
PH (1) PH12012501379A1 (enExample)
SG (1) SG182383A1 (enExample)
TW (2) TWI552362B (enExample)
UA (1) UA111585C2 (enExample)
WO (1) WO2011084903A1 (enExample)
ZA (1) ZA201205568B (enExample)

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SG182383A1 (en) 2010-01-08 2012-08-30 Tri Alpha Energy Inc Conversion of high-energy photons into electricity
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JP6429996B2 (ja) 2014-08-19 2018-11-28 ジェネラル フュージョン インコーポレイテッド プラズマ磁場を制御するためのシステム及び方法
US10269463B2 (en) * 2015-02-03 2019-04-23 The United States Of America As Represented By The Administrator Of Nasa Nuclear thermionic avalanche cells with thermoelectric (NTAC-TE) generator in tandem mode
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CN111225613B (zh) 2017-05-19 2024-08-02 想像科学有限公司 单色x射线成像系统及方法
CN107783170A (zh) * 2017-09-28 2018-03-09 摩瑞尔电器(昆山)有限公司 采用复合结构壳体的伽马射线检测设备
US10811144B2 (en) 2017-11-06 2020-10-20 General Fusion Inc. System and method for plasma generation and compression
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US11037687B2 (en) 2018-03-13 2021-06-15 United States Of America As Represented By The Administrator Of Nasa Co-60 breeding reactor tandem with thermionic avalanche cell
US11004666B2 (en) 2018-03-15 2021-05-11 United States Of America As Represented By The Administrator Of Nasa Portable miniaturized thermionic power cell with multiple regenerative layers
US10985676B2 (en) 2018-03-15 2021-04-20 United States Of America As Represented By The Administrator Of Nasa High performance electric generators boosted by nuclear electron avalanche (NEA)
US11257604B2 (en) 2018-05-30 2022-02-22 United States Of America As Represented By The Administrator Of Nasa Multi-layered radio-isotope for enhanced photoelectron avalanche process
KR102091228B1 (ko) * 2018-06-05 2020-03-19 서울방사선서비스주식회사 외부 피폭 선량계를 위한 대면적/연속식 품질 관리 시스템 및 방법
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US11581104B2 (en) 2019-05-21 2023-02-14 United States Of America As Represented By The Administrator Of Nasa Multi-layer structure of nuclear thermionic avalanche cells
US20220108814A1 (en) * 2020-10-01 2022-04-07 Robert W Moses Surface Flashover and Material Texturing for Multiplying and Collecting Electrons for Nuclear Thermal Avalanche Cells and Nuclear Battery Devices
US12310143B2 (en) 2021-03-22 2025-05-20 Yttrium SAIYAN Methods, systems, and apparatuses for producing, generating and utilizing power and energy
US20220302331A1 (en) * 2021-03-22 2022-09-22 Matthew Ryan Hankla Methods, systems, and apparatuses for producing, generating and utilizing power and energy

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US3821556A (en) * 1972-02-15 1974-06-28 Nasa Three mirror glancing incidence system for x ray telescope
US7399987B1 (en) * 1998-06-11 2008-07-15 Petr Viscor Planar electron emitter (PEE)
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Also Published As

Publication number Publication date
CN102859706A (zh) 2013-01-02
CN107123692A (zh) 2017-09-01
US9893226B2 (en) 2018-02-13
TWI463681B (zh) 2014-12-01
KR101962974B1 (ko) 2019-03-27
IL250054A0 (en) 2017-03-30
IL220819A (en) 2017-02-28
CN102859706B (zh) 2016-10-26
US9570644B2 (en) 2017-02-14
EP2522033A4 (en) 2016-04-20
ES2705690T3 (es) 2019-03-26
US20170236967A1 (en) 2017-08-17
KR20120134107A (ko) 2012-12-11
BR112012016873B1 (pt) 2020-10-20
TW201145535A (en) 2011-12-16
JP2013516624A (ja) 2013-05-13
WO2011084903A1 (en) 2011-07-14
JP2016148683A (ja) 2016-08-18
BR112012016873A2 (pt) 2018-06-05
JP2018028552A (ja) 2018-02-22
TW201507176A (zh) 2015-02-16
SG182383A1 (en) 2012-08-30
TWI552362B (zh) 2016-10-01
IL250054B (en) 2021-04-29
EP2522033B1 (en) 2018-11-14
AR079858A1 (es) 2012-02-22
CA2786590C (en) 2019-04-30
PH12012501379A1 (en) 2012-10-22
CN107123692B (zh) 2020-02-11
JP6097563B2 (ja) 2017-03-15
AU2010339631B2 (en) 2015-11-19
EP2522033A1 (en) 2012-11-14
AU2016201030B2 (en) 2017-03-23
US9324897B2 (en) 2016-04-26
EA201290620A1 (ru) 2013-01-30
US20130125963A1 (en) 2013-05-23
JP6327722B2 (ja) 2018-05-23
MX2012007991A (es) 2012-12-10
UA111585C2 (uk) 2016-05-25
AU2016201030A1 (en) 2016-03-10
NZ601448A (en) 2014-09-26
AU2010339631A1 (en) 2012-08-09
CA2786590A1 (en) 2011-07-14
ZA201205568B (en) 2013-09-25
US20160218235A1 (en) 2016-07-28

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