BR112012016873A2 - conversão de fótons de elevada energia em eletricidade. - Google Patents

conversão de fótons de elevada energia em eletricidade.

Info

Publication number
BR112012016873A2
BR112012016873A2 BR112012016873-8A BR112012016873A BR112012016873A2 BR 112012016873 A2 BR112012016873 A2 BR 112012016873A2 BR 112012016873 A BR112012016873 A BR 112012016873A BR 112012016873 A2 BR112012016873 A2 BR 112012016873A2
Authority
BR
Brazil
Prior art keywords
high energy
layers
electricity
conversion
energy photons
Prior art date
Application number
BR112012016873-8A
Other languages
English (en)
Other versions
BR112012016873B1 (pt
Inventor
Tajima Toshiki
Binderbauer Michl
Original Assignee
Tri Alpha Energy, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tri Alpha Energy, Inc. filed Critical Tri Alpha Energy, Inc.
Publication of BR112012016873A2 publication Critical patent/BR112012016873A2/pt
Publication of BR112012016873B1 publication Critical patent/BR112012016873B1/pt

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/085—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors the device being sensitive to very short wavelength, e.g. X-ray, Gamma-rays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • H01L31/0725—Multiple junction or tandem solar cells
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/28—Measuring radiation intensity with secondary-emission detectors
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21H—OBTAINING ENERGY FROM RADIOACTIVE SOURCES; APPLICATIONS OF RADIATION FROM RADIOACTIVE SOURCES, NOT OTHERWISE PROVIDED FOR; UTILISING COSMIC RADIATION
    • G21H1/00—Arrangements for obtaining electrical energy from radioactive sources, e.g. from radioactive isotopes, nuclear or atomic batteries
    • G21H1/04—Cells using secondary emission induced by alpha radiation, beta radiation, or gamma radiation
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21H—OBTAINING ENERGY FROM RADIOACTIVE SOURCES; APPLICATIONS OF RADIATION FROM RADIOACTIVE SOURCES, NOT OTHERWISE PROVIDED FOR; UTILISING COSMIC RADIATION
    • G21H1/00—Arrangements for obtaining electrical energy from radioactive sources, e.g. from radioactive isotopes, nuclear or atomic batteries
    • G21H1/06—Cells wherein radiation is applied to the junction of different semiconductor materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/542—Dye sensitized solar cells

Abstract

conversão de fótons de elevada energia em eletricidade. sistema e métodos para a conversão de energia advinda de fótons de elevada energia em eletricidade que fazem uso de uma série de materiais contendo diferenciadas cargas atômicas para levar vantagem quanto a emissão de uma ampla multiplicidade de elétrons através de um único fóton contendo elevada energia via uma cascata de emissões de elétrons auger. em um tipo de modalidade, um conversor de fóton de elevada energia vem a incluir, preferencialmente, uma bolacha em escala nanométrica depositada linearmente concebida a partir de camadas de um primeiro material comprimido entre camadas de um segundo material apresentando um número de carga atômica diferindo do número de carga atômica do primeiro material. em outro tipo de modalidade, as camadas em escala nanométrica são configuradas em uma configuração em formato de concha ou tubular e/ou incluem camadas de um terceiro material isolante.
BR112012016873-8A 2010-01-08 2011-01-01 conversor de energia destinado à conversão de emissões de fótons de elevada energia em energia elétrica BR112012016873B1 (pt)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US29328210P 2010-01-08 2010-01-08
US61/293,282 2010-01-08
PCT/US2011/020001 WO2011084903A1 (en) 2010-01-08 2011-01-01 Conversion of high-energy photons into electricity

Publications (2)

Publication Number Publication Date
BR112012016873A2 true BR112012016873A2 (pt) 2018-06-05
BR112012016873B1 BR112012016873B1 (pt) 2020-10-20

Family

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BR112012016873-8A BR112012016873B1 (pt) 2010-01-08 2011-01-01 conversor de energia destinado à conversão de emissões de fótons de elevada energia em energia elétrica

Country Status (19)

Country Link
US (3) US9324897B2 (pt)
EP (1) EP2522033B1 (pt)
JP (3) JP6097563B2 (pt)
KR (1) KR101962974B1 (pt)
CN (2) CN102859706B (pt)
AR (1) AR079858A1 (pt)
AU (2) AU2010339631B2 (pt)
BR (1) BR112012016873B1 (pt)
CA (1) CA2786590C (pt)
EA (1) EA025124B1 (pt)
ES (1) ES2705690T3 (pt)
IL (2) IL220819A (pt)
MX (1) MX2012007991A (pt)
NZ (1) NZ601448A (pt)
SG (1) SG182383A1 (pt)
TW (2) TWI463681B (pt)
UA (1) UA111585C2 (pt)
WO (1) WO2011084903A1 (pt)
ZA (1) ZA201205568B (pt)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2503159C2 (ru) 2009-02-04 2013-12-27 Дженерал Фьюжен, Инк. Устройство для сжатия плазмы и способ сжатия плазмы
WO2010120377A2 (en) 2009-04-16 2010-10-21 Silver Eric H Monochromatic x-ray methods and apparatus
US8891719B2 (en) 2009-07-29 2014-11-18 General Fusion, Inc. Systems and methods for plasma compression with recycling of projectiles
KR101962974B1 (ko) 2010-01-08 2019-03-27 티에이이 테크놀로지스, 인크. 고에너지 광자들의 전기로의 변환
WO2014032186A1 (en) 2012-08-29 2014-03-06 General Fusion, Inc. Apparatus for accelerating and compressing plasma
EA201691768A1 (ru) * 2014-03-03 2017-05-31 Бриллиант Лайт Пауэр, Инк. Фотоэлектрические системы выработки электроэнергии и относящиеся к ним способы
WO2015200494A1 (en) 2014-06-25 2015-12-30 Mayo Foundation For Medical Education And Research System and method for quantitative muscle ultrasound for diagnosis of neuromuscular disease
CA2958399C (en) 2014-08-19 2017-07-04 General Fusion Inc. System and method for controlling plasma magnetic field
US10269463B2 (en) * 2015-02-03 2019-04-23 The United States Of America As Represented By The Administrator Of Nasa Nuclear thermionic avalanche cells with thermoelectric (NTAC-TE) generator in tandem mode
US11063198B2 (en) 2016-04-05 2021-07-13 United States Of America As Represented By The Administrator Of Nasa Metallic junction thermoelectric generator
US10532223B2 (en) 2017-05-19 2020-01-14 Imagine Scientific, Inc. Monochromatic X-ray imaging systems and methods
CN107783170A (zh) * 2017-09-28 2018-03-09 摩瑞尔电器（昆山）有限公司 采用复合结构壳体的伽马射线检测设备
US10811144B2 (en) 2017-11-06 2020-10-20 General Fusion Inc. System and method for plasma generation and compression
US10886452B2 (en) 2018-01-25 2021-01-05 United States Of America As Represented By The Administrator Of Nasa Selective and direct deposition technique for streamlined CMOS processing
WO2019157386A2 (en) * 2018-02-09 2019-08-15 Imagine Scientific, Inc. Monochromatic x-ray imaging systems and methods
US10818467B2 (en) * 2018-02-09 2020-10-27 Imagine Scientific, Inc. Monochromatic x-ray imaging systems and methods
US11037687B2 (en) 2018-03-13 2021-06-15 United States Of America As Represented By The Administrator Of Nasa Co-60 breeding reactor tandem with thermionic avalanche cell
US11004666B2 (en) 2018-03-15 2021-05-11 United States Of America As Represented By The Administrator Of Nasa Portable miniaturized thermionic power cell with multiple regenerative layers
US10985676B2 (en) 2018-03-15 2021-04-20 United States Of America As Represented By The Administrator Of Nasa High performance electric generators boosted by nuclear electron avalanche (NEA)
US11257604B2 (en) 2018-05-30 2022-02-22 United States Of America As Represented By The Administrator Of Nasa Multi-layered radio-isotope for enhanced photoelectron avalanche process
KR102091228B1 (ko) * 2018-06-05 2020-03-19 서울방사선서비스주식회사 외부 피폭 선량계를 위한 대면적/연속식 품질 관리 시스템 및 방법
WO2020056281A1 (en) 2018-09-14 2020-03-19 Imagine Scientific, Inc. Monochromatic x-ray component systems and methods
US11581104B2 (en) 2019-05-21 2023-02-14 United States Of America As Represented By The Administrator Of Nasa Multi-layer structure of nuclear thermionic avalanche cells
US20220108814A1 (en) * 2020-10-01 2022-04-07 Robert W Moses Surface Flashover and Material Texturing for Multiplying and Collecting Electrons for Nuclear Thermal Avalanche Cells and Nuclear Battery Devices
JP2024508494A (ja) * 2021-03-01 2024-02-27 ティーエーイー テクノロジーズ， インコーポレイテッド カーボンネガティブ炉
US20220302331A1 (en) * 2021-03-22 2022-09-22 Matthew Ryan Hankla Methods, systems, and apparatuses for producing, generating and utilizing power and energy

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US739987A (en) * 1898-11-11 1903-09-29 American Tobacco Co Delivery mechanism for cigarette-machines.
US2847585A (en) * 1952-10-31 1958-08-12 Rca Corp Radiation responsive voltage sources
GB761404A (en) * 1953-06-30 1956-11-14 Rca Corp Improved methods of and means for converting the energy of nuclear radiations into useful electrical energy
US3284241A (en) * 1962-02-13 1966-11-08 Philco Corp Photo-emissive device including emitter and insulator of less than mean free path dimensions
BE716262A (pt) 1967-07-25 1968-11-04
US3591860A (en) * 1968-07-22 1971-07-06 Henry T Sampson Gamma-electric cell
US3821556A (en) * 1972-02-15 1974-06-28 Nasa Three mirror glancing incidence system for x ray telescope
CH539928A (de) * 1972-05-26 1973-07-31 Biviator Sa Nuklearbatterie
US4178524A (en) 1976-09-01 1979-12-11 Ritter James C Radioisotope photoelectric generator
JPH065291B2 (ja) 1986-07-02 1994-01-19 株式会社日立製作所 放射線検出器
JP2687122B2 (ja) * 1987-01-26 1997-12-08 株式会社ジャパンエナジー 積層型ＣｄＴｅ放射線検出素子
US4873555A (en) * 1987-06-08 1989-10-10 University Of Pittsburgh Of The Commonwealth System Of Higher Education Intraband quantum well photodetector and associated method
US5111099A (en) * 1990-03-02 1992-05-05 Genesis Energy Systems, Inc. Apparatus and method for converting radioactive energy into electrical energy
JP3126158B2 (ja) 1991-04-10 2001-01-22 日本放送協会 薄膜冷陰極
GB9415584D0 (en) 1994-08-02 1994-09-21 Imperial College Photo detector
CZ20004455A3 (cs) * 1998-06-11 2002-06-12 Petr Viscor Planární elektronový emitor (PEE)
FR2792418B1 (fr) * 1999-04-15 2001-06-01 Commissariat Energie Atomique Detecteur bidimensionnel de rayonnements ionisants et procede de fabrication de ce detecteur
SE514471C2 (sv) * 1999-04-30 2001-02-26 Xcounter Ab Röntgendetektorenhet med omvandlare av fast typ
DE60039545D1 (de) * 2000-10-20 2008-08-28 Josuke Nakata Lichtemittierdende oder lichtempfindliche Halbleiteranordnung und ihre Herstellungsmethode
US6774300B2 (en) * 2001-04-27 2004-08-10 Adrena, Inc. Apparatus and method for photovoltaic energy production based on internal charge emission in a solid-state heterostructure
EP2219049A3 (en) 2001-06-18 2017-12-20 Wisconsin Alumni Research Foundation Radiation detector with converters
US7485799B2 (en) * 2002-05-07 2009-02-03 John Michael Guerra Stress-induced bandgap-shifted semiconductor photoelectrolytic/photocatalytic/photovoltaic surface and method for making same
JP3837528B2 (ja) 2002-12-13 2006-10-25 国立大学法人名古屋大学 発電方法及び電池
JP3861154B2 (ja) * 2003-09-04 2006-12-20 国立大学法人名古屋大学 発電方法及び電池
CN101042945A (zh) * 2006-07-20 2007-09-26 永州市健民射线防护设备有限公司 一种环保型防辐射复合板
TW200812096A (en) * 2006-08-25 2008-03-01 Kinik Co Amorphous diamond energy converter
CN100501924C (zh) * 2006-12-19 2009-06-17 华东师范大学 一种辐射能量转换芯片的制作方法
US20080178924A1 (en) 2007-01-30 2008-07-31 Solasta, Inc. Photovoltaic cell and method of making thereof
WO2008144414A1 (en) * 2007-05-15 2008-11-27 Aeroflex Colorado Springs Inc. Energy sensitive direct conversion radiation detector
WO2009036308A1 (en) * 2007-09-12 2009-03-19 Sub-One Technology Hybrid photovoltaically active layer and method for forming such a layer
FI121828B (fi) 2007-12-04 2011-04-29 Finphys Oy Säteilynilmaisin, menetelmä säteilynilmaisimen valmistamiseksi ja ilmaisimen käyttö säteilyn mittaamiseen
KR101962974B1 (ko) 2010-01-08 2019-03-27 티에이이 테크놀로지스, 인크. 고에너지 광자들의 전기로의 변환

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JP2016148683A (ja) 2016-08-18
EA025124B1 (ru) 2016-11-30
IL250054B (en) 2021-04-29
CA2786590A1 (en) 2011-07-14
EP2522033A4 (en) 2016-04-20
JP2013516624A (ja) 2013-05-13
CN102859706A (zh) 2013-01-02
AU2016201030B2 (en) 2017-03-23
AU2010339631B2 (en) 2015-11-19
AU2010339631A1 (en) 2012-08-09
IL250054A0 (en) 2017-03-30
US9893226B2 (en) 2018-02-13
TW201507176A (zh) 2015-02-16
WO2011084903A1 (en) 2011-07-14
EP2522033B1 (en) 2018-11-14
KR20120134107A (ko) 2012-12-11
EP2522033A1 (en) 2012-11-14
BR112012016873B1 (pt) 2020-10-20
TWI552362B (zh) 2016-10-01
NZ601448A (en) 2014-09-26
CN107123692A (zh) 2017-09-01
ES2705690T3 (es) 2019-03-26
US20170236967A1 (en) 2017-08-17
US9570644B2 (en) 2017-02-14
TWI463681B (zh) 2014-12-01
CA2786590C (en) 2019-04-30
EA201290620A1 (ru) 2013-01-30
SG182383A1 (en) 2012-08-30
JP6097563B2 (ja) 2017-03-15
JP6327722B2 (ja) 2018-05-23
CN102859706B (zh) 2016-10-26
KR101962974B1 (ko) 2019-03-27
US20130125963A1 (en) 2013-05-23
TW201145535A (en) 2011-12-16
US20160218235A1 (en) 2016-07-28
JP2018028552A (ja) 2018-02-22
US9324897B2 (en) 2016-04-26
ZA201205568B (en) 2013-09-25
CN107123692B (zh) 2020-02-11
IL220819A (en) 2017-02-28
MX2012007991A (es) 2012-12-10
UA111585C2 (uk) 2016-05-25
AU2016201030A1 (en) 2016-03-10
AR079858A1 (es) 2012-02-22

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