WO2011078486A3 - 형광체를 사용한 고효율 태양전지 - Google Patents

형광체를 사용한 고효율 태양전지 Download PDF

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WO2011078486A3
WO2011078486A3 PCT/KR2010/008280 KR2010008280W WO2011078486A3 WO 2011078486 A3 WO2011078486 A3 WO 2011078486A3 KR 2010008280 W KR2010008280 W KR 2010008280W WO 2011078486 A3 WO2011078486 A3 WO 2011078486A3
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Prior art keywords
light
solar battery
fluorescent substance
high efficiency
front part
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PCT/KR2010/008280
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English (en)
French (fr)
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WO2011078486A2 (ko
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한상도
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한국에너지기술연구원
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Priority to US13/515,199 priority Critical patent/US8664521B2/en
Publication of WO2011078486A2 publication Critical patent/WO2011078486A2/ko
Publication of WO2011078486A3 publication Critical patent/WO2011078486A3/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/055—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means where light is absorbed and re-emitted at a different wavelength by the optical element directly associated or integrated with the PV cell, e.g. by using luminescent material, fluorescent concentrators or up-conversion arrangements
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    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7783—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals one of which being europium
    • C09K11/7784—Chalcogenides
    • C09K11/7787—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Sustainable Development (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Photovoltaic Devices (AREA)

Abstract

본 발명은 형광체를 사용하여 태양전지에 입사된 빛의 활용도를 높여서 변환효율을 향상시킨 고효율 태양전지에 관한 것이다. 본 발명의 형광체를 사용한 고효율 태양전지는, 전면전극을 포함하며 빛이 입사되는 전면부와, 상기 전면부의 뒤에 위치하며 상기 전면부를 통하여 입사된 빛 중 일정파장의 빛을 이용하여 전기를 발생시키는 발전부, 및 상기 발전부의 뒤에 위치하며 후면전극을 포함하는 후면부로 구성되는 태양전지에 있어서, 상기 후면전극에는 제1형광체가 분산되며, 상기 제1형광체가 상기 발전부에서 이용되는 상기 일정파장범위 외의 파장을 갖는 빛을 흡수하여 상기 일정파장으로 변환하여 방출하는 것을 특징으로 한다.
PCT/KR2010/008280 2009-12-24 2010-11-23 형광체를 사용한 고효율 태양전지 WO2011078486A2 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US13/515,199 US8664521B2 (en) 2009-12-24 2010-11-23 High efficiency solar cell using phosphors

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020090130910A KR101082351B1 (ko) 2009-12-24 2009-12-24 형광체를 사용한 고효율 태양전지
KR10-2009-0130910 2009-12-24

Publications (2)

Publication Number Publication Date
WO2011078486A2 WO2011078486A2 (ko) 2011-06-30
WO2011078486A3 true WO2011078486A3 (ko) 2011-10-27

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PCT/KR2010/008280 WO2011078486A2 (ko) 2009-12-24 2010-11-23 형광체를 사용한 고효율 태양전지

Country Status (3)

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US (1) US8664521B2 (ko)
KR (1) KR101082351B1 (ko)
WO (1) WO2011078486A2 (ko)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012145012A1 (en) * 2011-04-18 2012-10-26 The Regents Of The University Of Michigan Light trapping architecture for photovoltaic and photodetector applications
KR101283218B1 (ko) * 2011-10-19 2013-07-05 엘지이노텍 주식회사 태양전지 모듈 및 이의 제조방법
WO2013162732A1 (en) * 2012-04-23 2013-10-31 The Board Of Trustees Of The Leland Stanford Junior University Composition and method for upconversion of light and devices incorporating same
KR101422349B1 (ko) * 2012-10-30 2014-07-23 전남대학교산학협력단 형광체를 포함하는 유기 태양전지 및 이의 제조방법
CN103346203A (zh) * 2013-05-31 2013-10-09 浙江正泰太阳能科技有限公司 一种上转换太阳能电池及其制备方法
JPWO2015190047A1 (ja) * 2014-06-13 2017-04-20 パナソニックＩｐマネジメント株式会社 太陽電池モジュール
WO2017200862A1 (en) 2016-05-15 2017-11-23 3M Innovative Properties Company Light redirecting film constructions and methods of making them
CN106757018B (zh) * 2016-11-24 2018-12-04 南京工业大学 一种太阳能选择性吸收涂层及其制备方法
DE102019109909A1 (de) 2019-04-15 2020-10-15 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement mit einer Lumineszenzkonversionsschicht
KR102528452B1 (ko) * 2020-11-25 2023-05-03 한국광기술원 적외광 이용형 태양전지

Citations (3)

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JP2003142716A (ja) * 2001-11-02 2003-05-16 Seiko Epson Corp 光電変換装置
JP2006173545A (ja) * 2004-12-13 2006-06-29 Sc Technology Kk 希土類ドープＣａＦ２層を有する太陽電池構造及び太陽電池モジュール構造
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Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003142716A (ja) * 2001-11-02 2003-05-16 Seiko Epson Corp 光電変換装置
JP2006173545A (ja) * 2004-12-13 2006-06-29 Sc Technology Kk 希土類ドープＣａＦ２層を有する太陽電池構造及び太陽電池モジュール構造
KR20090069894A (ko) * 2007-12-26 2009-07-01 엘지전자 주식회사 형광체를 포함한 태양전지 모듈 및 그 제조 방법

Also Published As

Publication number Publication date
WO2011078486A2 (ko) 2011-06-30
US8664521B2 (en) 2014-03-04
US20120260984A1 (en) 2012-10-18
KR101082351B1 (ko) 2011-11-10
KR20110074062A (ko) 2011-06-30

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