MX2012007991A - Conversion de fotones de alta energia en electricidad. - Google Patents

Conversion de fotones de alta energia en electricidad.

Info

Publication number
MX2012007991A
MX2012007991A MX2012007991A MX2012007991A MX2012007991A MX 2012007991 A MX2012007991 A MX 2012007991A MX 2012007991 A MX2012007991 A MX 2012007991A MX 2012007991 A MX2012007991 A MX 2012007991A MX 2012007991 A MX2012007991 A MX 2012007991A
Authority
MX
Mexico
Prior art keywords
layers
energy
electricity
conversion
nanometric
Prior art date
Application number
MX2012007991A
Other languages
English (en)
Inventor
Michl Binderbauer
Toshiki Tajima
Original Assignee
Tri Alpha Energy Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tri Alpha Energy Inc filed Critical Tri Alpha Energy Inc
Publication of MX2012007991A publication Critical patent/MX2012007991A/es

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/085—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors the device being sensitive to very short wavelength, e.g. X-ray, Gamma-rays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • H01L31/0725—Multiple junction or tandem solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/28—Measuring radiation intensity with secondary-emission detectors
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21H—OBTAINING ENERGY FROM RADIOACTIVE SOURCES; APPLICATIONS OF RADIATION FROM RADIOACTIVE SOURCES, NOT OTHERWISE PROVIDED FOR; UTILISING COSMIC RADIATION
    • G21H1/00—Arrangements for obtaining electrical energy from radioactive sources, e.g. from radioactive isotopes, nuclear or atomic batteries
    • G21H1/04—Cells using secondary emission induced by alpha radiation, beta radiation, or gamma radiation
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21H—OBTAINING ENERGY FROM RADIOACTIVE SOURCES; APPLICATIONS OF RADIATION FROM RADIOACTIVE SOURCES, NOT OTHERWISE PROVIDED FOR; UTILISING COSMIC RADIATION
    • G21H1/00—Arrangements for obtaining electrical energy from radioactive sources, e.g. from radioactive isotopes, nuclear or atomic batteries
    • G21H1/06—Cells wherein radiation is applied to the junction of different semiconductor materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/542—Dye sensitized solar cells

Abstract

Se describen los sistemas y métodos para la conversión de energía de fotones de alta energía en electricidad, que utilizan una serie de materiales con diferentes cargas atómicas, para tomar ventaja de la emisión de una gran pluralidad de electrones por un fotón simple de alta energía, por medio de una cascada de emisiones de electrones de Auger. En una modalidad, un convertidor de fotones de alta energía incluye preferentemente una oblea a escala nanométrica, linealmente en capas, constituida de capas de un primer material emparedado entre dos capas de un segundo material que tiene un número de carga atómica que difiere del número de carga atómica del primer material. En otras modalidades, las capas a escala nanométrica están configuradas en un configuración tubular o en forma de coraza y/o incluyen capas de un tercer material aislante.
MX2012007991A 2010-01-08 2011-01-01 Conversion de fotones de alta energia en electricidad. MX2012007991A (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US29328210P 2010-01-08 2010-01-08
PCT/US2011/020001 WO2011084903A1 (en) 2010-01-08 2011-01-01 Conversion of high-energy photons into electricity

Publications (1)

Publication Number Publication Date
MX2012007991A true MX2012007991A (es) 2012-12-10

Family

ID=44305761

Family Applications (1)

Application Number Title Priority Date Filing Date
MX2012007991A MX2012007991A (es) 2010-01-08 2011-01-01 Conversion de fotones de alta energia en electricidad.

Country Status (19)

Country Link
US (3) US9324897B2 (es)
EP (1) EP2522033B1 (es)
JP (3) JP6097563B2 (es)
KR (1) KR101962974B1 (es)
CN (2) CN107123692B (es)
AR (1) AR079858A1 (es)
AU (2) AU2010339631B2 (es)
BR (1) BR112012016873B1 (es)
CA (1) CA2786590C (es)
EA (1) EA025124B1 (es)
ES (1) ES2705690T3 (es)
IL (2) IL220819A (es)
MX (1) MX2012007991A (es)
NZ (1) NZ601448A (es)
SG (1) SG182383A1 (es)
TW (2) TWI463681B (es)
UA (1) UA111585C2 (es)
WO (1) WO2011084903A1 (es)
ZA (1) ZA201205568B (es)

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Also Published As

Publication number Publication date
EA201290620A1 (ru) 2013-01-30
IL220819A (en) 2017-02-28
US20170236967A1 (en) 2017-08-17
CA2786590C (en) 2019-04-30
CN102859706B (zh) 2016-10-26
JP2018028552A (ja) 2018-02-22
WO2011084903A1 (en) 2011-07-14
IL250054B (en) 2021-04-29
JP6327722B2 (ja) 2018-05-23
JP6097563B2 (ja) 2017-03-15
EP2522033B1 (en) 2018-11-14
EP2522033A4 (en) 2016-04-20
CN102859706A (zh) 2013-01-02
SG182383A1 (en) 2012-08-30
JP2016148683A (ja) 2016-08-18
UA111585C2 (uk) 2016-05-25
CN107123692B (zh) 2020-02-11
IL250054A0 (en) 2017-03-30
US9893226B2 (en) 2018-02-13
AU2016201030B2 (en) 2017-03-23
TW201507176A (zh) 2015-02-16
AU2016201030A1 (en) 2016-03-10
AU2010339631A1 (en) 2012-08-09
NZ601448A (en) 2014-09-26
TWI552362B (zh) 2016-10-01
US9324897B2 (en) 2016-04-26
US9570644B2 (en) 2017-02-14
JP2013516624A (ja) 2013-05-13
KR20120134107A (ko) 2012-12-11
ZA201205568B (en) 2013-09-25
CA2786590A1 (en) 2011-07-14
US20160218235A1 (en) 2016-07-28
AU2010339631B2 (en) 2015-11-19
EA025124B1 (ru) 2016-11-30
KR101962974B1 (ko) 2019-03-27
US20130125963A1 (en) 2013-05-23
CN107123692A (zh) 2017-09-01
EP2522033A1 (en) 2012-11-14
BR112012016873B1 (pt) 2020-10-20
AR079858A1 (es) 2012-02-22
TWI463681B (zh) 2014-12-01
TW201145535A (en) 2011-12-16
ES2705690T3 (es) 2019-03-26
BR112012016873A2 (pt) 2018-06-05

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