UA111585C2 - Перетворення високоенергетичних фотонів в електрику - Google Patents

Перетворення високоенергетичних фотонів в електрику

Info

Publication number
UA111585C2
UA111585C2 UAA201209620A UAA201209620A UA111585C2 UA 111585 C2 UA111585 C2 UA 111585C2 UA A201209620 A UAA201209620 A UA A201209620A UA A201209620 A UAA201209620 A UA A201209620A UA 111585 C2 UA111585 C2 UA 111585C2
Authority
UA
Ukraine
Prior art keywords
layers
energy
electricity
nanometric
differing
Prior art date
Application number
UAA201209620A
Other languages
English (en)
Ukrainian (uk)
Inventor
Тосікі Таджима
Міхель Біндербауер
Original Assignee
Трай Альфа Енерджи, Інк.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Трай Альфа Енерджи, Інк. filed Critical Трай Альфа Енерджи, Інк.
Publication of UA111585C2 publication Critical patent/UA111585C2/uk

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/301Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to very short wavelength, e.g. being sensitive to X-rays, gamma-rays or corpuscular radiation
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01TMEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16Measuring radiation intensity
    • G01T1/28Measuring radiation intensity with secondary-emission detectors
    • GPHYSICS
    • G21NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21HOBTAINING ENERGY FROM RADIOACTIVE SOURCES; APPLICATIONS OF RADIATION FROM RADIOACTIVE SOURCES, NOT OTHERWISE PROVIDED FOR; UTILISING COSMIC RADIATION
    • G21H1/00Arrangements for obtaining electrical energy from radioactive sources, e.g. from radioactive isotopes, nuclear or atomic batteries
    • G21H1/04Cells using secondary emission induced by alpha radiation, beta radiation, or gamma radiation
    • GPHYSICS
    • G21NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21HOBTAINING ENERGY FROM RADIOACTIVE SOURCES; APPLICATIONS OF RADIATION FROM RADIOACTIVE SOURCES, NOT OTHERWISE PROVIDED FOR; UTILISING COSMIC RADIATION
    • G21H1/00Arrangements for obtaining electrical energy from radioactive sources, e.g. from radioactive isotopes, nuclear or atomic batteries
    • G21H1/06Cells wherein radiation is applied to the junction of different semiconductor materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00Individual photovoltaic cells, e.g. solar cells
    • H10F10/10Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/161Photovoltaic cells having only PN heterojunction potential barriers comprising multiple PN heterojunctions, e.g. tandem cells
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/10Semiconductor bodies
    • H10F77/12Active materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/10Semiconductor bodies
    • H10F77/14Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/40Optical elements or arrangements
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/542Dye sensitized solar cells

Landscapes

  • High Energy & Nuclear Physics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Molecular Biology (AREA)
  • Health & Medical Sciences (AREA)
  • Particle Accelerators (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • X-Ray Techniques (AREA)
  • Surface Treatment Of Glass (AREA)
  • Luminescent Compositions (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
UAA201209620A 2010-01-08 2011-01-01 Перетворення високоенергетичних фотонів в електрику UA111585C2 (uk)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US29328210P 2010-01-08 2010-01-08
PCT/US2011/020001 WO2011084903A1 (en) 2010-01-08 2011-01-01 Conversion of high-energy photons into electricity

Publications (1)

Publication Number Publication Date
UA111585C2 true UA111585C2 (uk) 2016-05-25

Family

ID=44305761

Family Applications (1)

Application Number Title Priority Date Filing Date
UAA201209620A UA111585C2 (uk) 2010-01-08 2011-01-01 Перетворення високоенергетичних фотонів в електрику

Country Status (20)

Country Link
US (3) US9324897B2 (enExample)
EP (1) EP2522033B1 (enExample)
JP (3) JP6097563B2 (enExample)
KR (1) KR101962974B1 (enExample)
CN (2) CN107123692B (enExample)
AR (1) AR079858A1 (enExample)
AU (2) AU2010339631B2 (enExample)
BR (1) BR112012016873B1 (enExample)
CA (1) CA2786590C (enExample)
EA (1) EA025124B1 (enExample)
ES (1) ES2705690T3 (enExample)
IL (2) IL220819A (enExample)
MX (1) MX2012007991A (enExample)
NZ (1) NZ601448A (enExample)
PH (1) PH12012501379A1 (enExample)
SG (1) SG182383A1 (enExample)
TW (2) TWI552362B (enExample)
UA (1) UA111585C2 (enExample)
WO (1) WO2011084903A1 (enExample)
ZA (1) ZA201205568B (enExample)

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US12310143B2 (en) 2021-03-22 2025-05-20 Yttrium SAIYAN Methods, systems, and apparatuses for producing, generating and utilizing power and energy
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Also Published As

Publication number Publication date
CN102859706A (zh) 2013-01-02
CN107123692A (zh) 2017-09-01
US9893226B2 (en) 2018-02-13
TWI463681B (zh) 2014-12-01
KR101962974B1 (ko) 2019-03-27
IL250054A0 (en) 2017-03-30
IL220819A (en) 2017-02-28
CN102859706B (zh) 2016-10-26
US9570644B2 (en) 2017-02-14
EP2522033A4 (en) 2016-04-20
ES2705690T3 (es) 2019-03-26
US20170236967A1 (en) 2017-08-17
KR20120134107A (ko) 2012-12-11
BR112012016873B1 (pt) 2020-10-20
TW201145535A (en) 2011-12-16
JP2013516624A (ja) 2013-05-13
WO2011084903A1 (en) 2011-07-14
JP2016148683A (ja) 2016-08-18
EA025124B1 (ru) 2016-11-30
BR112012016873A2 (pt) 2018-06-05
JP2018028552A (ja) 2018-02-22
TW201507176A (zh) 2015-02-16
SG182383A1 (en) 2012-08-30
TWI552362B (zh) 2016-10-01
IL250054B (en) 2021-04-29
EP2522033B1 (en) 2018-11-14
AR079858A1 (es) 2012-02-22
CA2786590C (en) 2019-04-30
PH12012501379A1 (en) 2012-10-22
CN107123692B (zh) 2020-02-11
JP6097563B2 (ja) 2017-03-15
AU2010339631B2 (en) 2015-11-19
EP2522033A1 (en) 2012-11-14
AU2016201030B2 (en) 2017-03-23
US9324897B2 (en) 2016-04-26
EA201290620A1 (ru) 2013-01-30
US20130125963A1 (en) 2013-05-23
JP6327722B2 (ja) 2018-05-23
MX2012007991A (es) 2012-12-10
AU2016201030A1 (en) 2016-03-10
NZ601448A (en) 2014-09-26
AU2010339631A1 (en) 2012-08-09
CA2786590A1 (en) 2011-07-14
ZA201205568B (en) 2013-09-25
US20160218235A1 (en) 2016-07-28

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