TWI463681B - 用於將高能量光子放射轉換成電能之能量轉換器、方法以及能量轉換系統 - Google Patents

用於將高能量光子放射轉換成電能之能量轉換器、方法以及能量轉換系統 Download PDF

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Publication number
TWI463681B
TWI463681B TW100100596A TW100100596A TWI463681B TW I463681 B TWI463681 B TW I463681B TW 100100596 A TW100100596 A TW 100100596A TW 100100596 A TW100100596 A TW 100100596A TW I463681 B TWI463681 B TW I463681B
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Taiwan
Prior art keywords
energy
material layer
material layers
layers
photon
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TW100100596A
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English (en)
Chinese (zh)
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TW201145535A (en
Inventor
Toshiki Tajima
Michl Binderbauer
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Tri Alpha Energy Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/301—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to very short wavelength, e.g. being sensitive to X-rays, gamma-rays or corpuscular radiation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/28—Measuring radiation intensity with secondary-emission detectors
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21H—OBTAINING ENERGY FROM RADIOACTIVE SOURCES; APPLICATIONS OF RADIATION FROM RADIOACTIVE SOURCES, NOT OTHERWISE PROVIDED FOR; UTILISING COSMIC RADIATION
    • G21H1/00—Arrangements for obtaining electrical energy from radioactive sources, e.g. from radioactive isotopes, nuclear or atomic batteries
    • G21H1/04—Cells using secondary emission induced by alpha radiation, beta radiation, or gamma radiation
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21H—OBTAINING ENERGY FROM RADIOACTIVE SOURCES; APPLICATIONS OF RADIATION FROM RADIOACTIVE SOURCES, NOT OTHERWISE PROVIDED FOR; UTILISING COSMIC RADIATION
    • G21H1/00—Arrangements for obtaining electrical energy from radioactive sources, e.g. from radioactive isotopes, nuclear or atomic batteries
    • G21H1/06—Cells wherein radiation is applied to the junction of different semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/161—Photovoltaic cells having only PN heterojunction potential barriers comprising multiple PN heterojunctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/542—Dye sensitized solar cells

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  • High Energy & Nuclear Physics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Particle Accelerators (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • X-Ray Techniques (AREA)
  • Luminescent Compositions (AREA)
  • Surface Treatment Of Glass (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
TW100100596A 2010-01-08 2011-01-07 用於將高能量光子放射轉換成電能之能量轉換器、方法以及能量轉換系統 TWI463681B (zh)

Applications Claiming Priority (1)

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US29328210P 2010-01-08 2010-01-08

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TW201145535A TW201145535A (en) 2011-12-16
TWI463681B true TWI463681B (zh) 2014-12-01

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TW103137578A TWI552362B (zh) 2010-01-08 2011-01-07 用於將高能量光子放射轉換成電能之能量轉換器、方法以及能量轉換系統
TW100100596A TWI463681B (zh) 2010-01-08 2011-01-07 用於將高能量光子放射轉換成電能之能量轉換器、方法以及能量轉換系統

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Country Status (20)

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US (3) US9324897B2 (enExample)
EP (1) EP2522033B1 (enExample)
JP (3) JP6097563B2 (enExample)
KR (1) KR101962974B1 (enExample)
CN (2) CN102859706B (enExample)
AR (1) AR079858A1 (enExample)
AU (2) AU2010339631B2 (enExample)
BR (1) BR112012016873B1 (enExample)
CA (1) CA2786590C (enExample)
EA (1) EA025124B1 (enExample)
ES (1) ES2705690T3 (enExample)
IL (2) IL220819A (enExample)
MX (1) MX2012007991A (enExample)
NZ (1) NZ601448A (enExample)
PH (1) PH12012501379A1 (enExample)
SG (1) SG182383A1 (enExample)
TW (2) TWI552362B (enExample)
UA (1) UA111585C2 (enExample)
WO (1) WO2011084903A1 (enExample)
ZA (1) ZA201205568B (enExample)

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US10269463B2 (en) * 2015-02-03 2019-04-23 The United States Of America As Represented By The Administrator Of Nasa Nuclear thermionic avalanche cells with thermoelectric (NTAC-TE) generator in tandem mode
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CN111225613B (zh) 2017-05-19 2024-08-02 想像科学有限公司 单色x射线成像系统及方法
CN107783170A (zh) * 2017-09-28 2018-03-09 摩瑞尔电器（昆山）有限公司 采用复合结构壳体的伽马射线检测设备
US10811144B2 (en) 2017-11-06 2020-10-20 General Fusion Inc. System and method for plasma generation and compression
US10886452B2 (en) 2018-01-25 2021-01-05 United States Of America As Represented By The Administrator Of Nasa Selective and direct deposition technique for streamlined CMOS processing
KR102762812B1 (ko) 2018-02-09 2025-02-05 이매진 싸이언티픽, 인크. 단색 엑스선 영상 시스템 및 방법
US10818467B2 (en) * 2018-02-09 2020-10-27 Imagine Scientific, Inc. Monochromatic x-ray imaging systems and methods
US11037687B2 (en) 2018-03-13 2021-06-15 United States Of America As Represented By The Administrator Of Nasa Co-60 breeding reactor tandem with thermionic avalanche cell
US10985676B2 (en) 2018-03-15 2021-04-20 United States Of America As Represented By The Administrator Of Nasa High performance electric generators boosted by nuclear electron avalanche (NEA)
US11004666B2 (en) 2018-03-15 2021-05-11 United States Of America As Represented By The Administrator Of Nasa Portable miniaturized thermionic power cell with multiple regenerative layers
US11257604B2 (en) 2018-05-30 2022-02-22 United States Of America As Represented By The Administrator Of Nasa Multi-layered radio-isotope for enhanced photoelectron avalanche process
KR102091228B1 (ko) * 2018-06-05 2020-03-19 서울방사선서비스주식회사 외부 피폭 선량계를 위한 대면적/연속식 품질 관리 시스템 및 방법
WO2020056281A1 (en) 2018-09-14 2020-03-19 Imagine Scientific, Inc. Monochromatic x-ray component systems and methods
US11581104B2 (en) 2019-05-21 2023-02-14 United States Of America As Represented By The Administrator Of Nasa Multi-layer structure of nuclear thermionic avalanche cells
US20220108814A1 (en) * 2020-10-01 2022-04-07 Robert W Moses Surface Flashover and Material Texturing for Multiplying and Collecting Electrons for Nuclear Thermal Avalanche Cells and Nuclear Battery Devices
US12310143B2 (en) 2021-03-22 2025-05-20 Yttrium SAIYAN Methods, systems, and apparatuses for producing, generating and utilizing power and energy
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Also Published As

Publication number Publication date
EP2522033A4 (en) 2016-04-20
JP2018028552A (ja) 2018-02-22
CN107123692A (zh) 2017-09-01
AU2016201030A1 (en) 2016-03-10
AR079858A1 (es) 2012-02-22
ZA201205568B (en) 2013-09-25
CN102859706A (zh) 2013-01-02
KR20120134107A (ko) 2012-12-11
JP6327722B2 (ja) 2018-05-23
US20160218235A1 (en) 2016-07-28
CA2786590A1 (en) 2011-07-14
NZ601448A (en) 2014-09-26
CA2786590C (en) 2019-04-30
AU2010339631B2 (en) 2015-11-19
UA111585C2 (uk) 2016-05-25
EP2522033A1 (en) 2012-11-14
IL250054A0 (en) 2017-03-30
US9570644B2 (en) 2017-02-14
AU2016201030B2 (en) 2017-03-23
WO2011084903A1 (en) 2011-07-14
CN102859706B (zh) 2016-10-26
KR101962974B1 (ko) 2019-03-27
EP2522033B1 (en) 2018-11-14
SG182383A1 (en) 2012-08-30
EA201290620A1 (ru) 2013-01-30
JP6097563B2 (ja) 2017-03-15
JP2016148683A (ja) 2016-08-18
TWI552362B (zh) 2016-10-01
BR112012016873B1 (pt) 2020-10-20
MX2012007991A (es) 2012-12-10
US9893226B2 (en) 2018-02-13
EA025124B1 (ru) 2016-11-30
AU2010339631A1 (en) 2012-08-09
US20130125963A1 (en) 2013-05-23
JP2013516624A (ja) 2013-05-13
TW201507176A (zh) 2015-02-16
IL250054B (en) 2021-04-29
BR112012016873A2 (pt) 2018-06-05
US20170236967A1 (en) 2017-08-17
PH12012501379A1 (en) 2012-10-22
IL220819A (en) 2017-02-28
ES2705690T3 (es) 2019-03-26
US9324897B2 (en) 2016-04-26
CN107123692B (zh) 2020-02-11
TW201145535A (en) 2011-12-16

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