CN1373907A - 发光或者受光用半导体器件及其制造方法 - Google Patents
发光或者受光用半导体器件及其制造方法 Download PDFInfo
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- CN1373907A CN1373907A CN00812460A CN00812460A CN1373907A CN 1373907 A CN1373907 A CN 1373907A CN 00812460 A CN00812460 A CN 00812460A CN 00812460 A CN00812460 A CN 00812460A CN 1373907 A CN1373907 A CN 1373907A
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- UJMWVICAENGCRF-UHFFFAOYSA-N oxygen difluoride Chemical compound FOF UJMWVICAENGCRF-UHFFFAOYSA-N 0.000 description 1
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- 239000000377 silicon dioxide Substances 0.000 description 1
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
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- H01—ELECTRIC ELEMENTS
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/035281—Shape of the body
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/03529—Shape of the potential jump barrier or surface barrier
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
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- H—ELECTRICITY
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Sustainable Development (AREA)
- Life Sciences & Earth Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Sustainable Energy (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
- Led Devices (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
Claims (17)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2000/007359 WO2002035612A1 (en) | 2000-10-20 | 2000-10-20 | Light-emitting or light-receiving semiconductor device and method for fabricating the same |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1373907A true CN1373907A (zh) | 2002-10-09 |
CN1182590C CN1182590C (zh) | 2004-12-29 |
Family
ID=11736611
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB008124604A Expired - Lifetime CN1182590C (zh) | 2000-10-20 | 2000-10-20 | 发光或者受光用半导体器件及其制造方法 |
Country Status (11)
Country | Link |
---|---|
US (1) | US6744073B1 (zh) |
EP (2) | EP1646090B1 (zh) |
JP (1) | JP3938908B2 (zh) |
KR (1) | KR100549249B1 (zh) |
CN (1) | CN1182590C (zh) |
AU (1) | AU773312B2 (zh) |
CA (1) | CA2393219C (zh) |
DE (2) | DE60039545D1 (zh) |
HK (1) | HK1084237A1 (zh) |
TW (1) | TW469655B (zh) |
WO (1) | WO2002035612A1 (zh) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102113126A (zh) * | 2008-08-08 | 2011-06-29 | 京半导体股份有限公司 | 采光型太阳电池模组 |
CN102113125A (zh) * | 2008-08-08 | 2011-06-29 | 京半导体股份有限公司 | 采光型太阳电池模组 |
CN101305474B (zh) * | 2006-01-11 | 2012-03-21 | 京半导体股份有限公司 | 受光或发光用半导体模块 |
CN102859706A (zh) * | 2010-01-08 | 2013-01-02 | Tri阿尔法能源公司 | 高能光子向电力的转换 |
US8809675B2 (en) | 2011-12-16 | 2014-08-19 | Tsinghua University | Solar cell system |
US8871533B2 (en) | 2011-12-29 | 2014-10-28 | Tsinghua University | Method for making solar cell and solar cell system |
TWI460872B (zh) * | 2011-12-29 | 2014-11-11 | Hon Hai Prec Ind Co Ltd | 太陽能電池 |
US9012767B2 (en) | 2011-12-16 | 2015-04-21 | Tsinghua University | Solar cell system |
CN105027298A (zh) * | 2012-11-20 | 2015-11-04 | 诺基亚技术有限公司 | 光探测 |
US9349894B2 (en) | 2011-12-29 | 2016-05-24 | Tsinghua University | Solar cell and solar cell system |
Families Citing this family (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20030086573A (ko) * | 2001-08-13 | 2003-11-10 | 죠스게 나가다 | 반도체 디바이스 및 그 제조 방법 |
KR100561112B1 (ko) * | 2001-08-13 | 2006-03-15 | 죠스게 나가다 | 발광 또는 수광용 반도체 모듈 및 그 제조 방법 |
CN1220277C (zh) * | 2001-10-19 | 2005-09-21 | 中田仗祐 | 发光或感光半导体组件及其制造方法 |
EP1467413B1 (en) * | 2001-12-25 | 2007-07-18 | Josuke Nakata | Light receiving or emitting semiconductor apparatus |
AU2002255303B2 (en) * | 2002-05-02 | 2006-07-06 | Sphelar Power Corporation | Light-Receiving panel or light-emitting panel, and manufacturing method thereof |
EP1811575B1 (en) * | 2002-06-21 | 2017-06-21 | Sphelar Power Corporation | Light-receiving or light emitting device and method of manufacturing the same |
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- 2000-10-20 DE DE60039545T patent/DE60039545D1/de not_active Expired - Lifetime
- 2000-10-20 WO PCT/JP2000/007359 patent/WO2002035612A1/ja active IP Right Grant
- 2000-10-20 DE DE60039535T patent/DE60039535D1/de not_active Expired - Lifetime
- 2000-10-20 EP EP06000576A patent/EP1646090B1/en not_active Expired - Lifetime
- 2000-10-20 CN CNB008124604A patent/CN1182590C/zh not_active Expired - Lifetime
- 2000-10-20 AU AU79533/00A patent/AU773312B2/en not_active Ceased
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CN102859706B (zh) * | 2010-01-08 | 2016-10-26 | Tri阿尔法能源公司 | 高能光子向电力的转换 |
CN102859706A (zh) * | 2010-01-08 | 2013-01-02 | Tri阿尔法能源公司 | 高能光子向电力的转换 |
US8809675B2 (en) | 2011-12-16 | 2014-08-19 | Tsinghua University | Solar cell system |
US9012767B2 (en) | 2011-12-16 | 2015-04-21 | Tsinghua University | Solar cell system |
TWI460872B (zh) * | 2011-12-29 | 2014-11-11 | Hon Hai Prec Ind Co Ltd | 太陽能電池 |
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US8871533B2 (en) | 2011-12-29 | 2014-10-28 | Tsinghua University | Method for making solar cell and solar cell system |
CN105027298A (zh) * | 2012-11-20 | 2015-11-04 | 诺基亚技术有限公司 | 光探测 |
Also Published As
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KR20020069349A (ko) | 2002-08-30 |
AU7953300A (en) | 2002-05-06 |
JPWO2002035612A1 (ja) | 2004-03-04 |
AU773312B2 (en) | 2004-05-20 |
US6744073B1 (en) | 2004-06-01 |
HK1084237A1 (en) | 2006-07-21 |
EP1646090B1 (en) | 2008-07-16 |
DE60039545D1 (de) | 2008-08-28 |
JP3938908B2 (ja) | 2007-06-27 |
DE60039535D1 (de) | 2008-08-28 |
CA2393219A1 (en) | 2002-05-02 |
WO2002035612A1 (en) | 2002-05-02 |
CN1182590C (zh) | 2004-12-29 |
CA2393219C (en) | 2007-01-09 |
EP1253649B1 (en) | 2008-07-16 |
EP1253649A4 (en) | 2005-11-16 |
EP1646090A1 (en) | 2006-04-12 |
KR100549249B1 (ko) | 2006-02-03 |
TW469655B (en) | 2001-12-21 |
EP1253649A1 (en) | 2002-10-30 |
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