CN102855929B - 存储元件、制造存储元件的方法以及存储装置 - Google Patents

存储元件、制造存储元件的方法以及存储装置 Download PDF

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Publication number
CN102855929B
CN102855929B CN201210210924.5A CN201210210924A CN102855929B CN 102855929 B CN102855929 B CN 102855929B CN 201210210924 A CN201210210924 A CN 201210210924A CN 102855929 B CN102855929 B CN 102855929B
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China
Prior art keywords
layer
ion source
source layer
chalcogen
electrode
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Expired - Fee Related
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CN201210210924.5A
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English (en)
Chinese (zh)
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CN102855929A (zh
Inventor
紫牟田雅之
保田周郎
保田周一郎
水口徹也
大场和博
荒谷胜久
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Sony Corp
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Sony Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
    • H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0011—RRAM elements whose operation depends upon chemical change comprising conductive bridging RAM [CBRAM] or programming metallization cells [PMCs]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H10B63/82—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays the switching components having a common active material layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H10N70/8416—Electrodes adapted for supplying ionic species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8833—Binary metal oxides, e.g. TaOx
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/50—Resistive cell structure aspects
    • G11C2213/55—Structure including two electrodes, a memory active layer and at least two other layers which can be a passive or source or reservoir layer or a less doped memory active layer

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Semiconductor Memories (AREA)
CN201210210924.5A 2011-06-30 2012-06-20 存储元件、制造存储元件的方法以及存储装置 Expired - Fee Related CN102855929B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011146113A JP5708930B2 (ja) 2011-06-30 2011-06-30 記憶素子およびその製造方法ならびに記憶装置
JP2011-146113 2011-06-30

Publications (2)

Publication Number Publication Date
CN102855929A CN102855929A (zh) 2013-01-02
CN102855929B true CN102855929B (zh) 2017-03-01

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US (1) US9058873B2 (enExample)
EP (1) EP2541555A3 (enExample)
JP (1) JP5708930B2 (enExample)
KR (1) KR102040329B1 (enExample)
CN (1) CN102855929B (enExample)
TW (1) TWI542054B (enExample)

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FR2993388B1 (fr) * 2012-07-11 2015-04-03 Altis Semiconductor Snc Dispositif microelectronique a memoire programmable
US8921821B2 (en) * 2013-01-10 2014-12-30 Micron Technology, Inc. Memory cells
US20140264224A1 (en) * 2013-03-14 2014-09-18 Intermolecular, Inc. Performance Enhancement of Forming-Free ReRAM Devices Using 3D Nanoparticles
JP2014216553A (ja) * 2013-04-26 2014-11-17 株式会社東芝 抵抗変化型記憶装置
US8981334B1 (en) * 2013-11-01 2015-03-17 Micron Technology, Inc. Memory cells having regions containing one or both of carbon and boron
US9431606B1 (en) * 2015-08-12 2016-08-30 Micron Technology, Inc. Memory cells
US10381075B2 (en) * 2017-12-14 2019-08-13 Micron Technology, Inc. Techniques to access a self-selecting memory device
JP2019129239A (ja) * 2018-01-25 2019-08-01 ソニーセミコンダクタソリューションズ株式会社 記憶素子および記憶装置
US10825867B2 (en) 2018-04-24 2020-11-03 Micron Technology, Inc. Cross-point memory array and related fabrication techniques
US10729012B2 (en) * 2018-04-24 2020-07-28 Micron Technology, Inc. Buried lines and related fabrication techniques
CN116963582A (zh) 2018-10-29 2023-10-27 联华电子股份有限公司 半导体元件及其制作方法
US11594678B2 (en) 2020-03-03 2023-02-28 Taiwan Semiconductor Manufacturing Company, Ltd. Diffusion barrier layer in programmable metallization cell

Citations (3)

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US5430320A (en) * 1993-10-30 1995-07-04 Samsung Electronics Co., Ltd. Thin film transistor having a lightly doped drain and an offset structure for suppressing the leakage current
CN101765914A (zh) * 2007-08-06 2010-06-30 索尼公司 存储元件和存储装置
CN101868855A (zh) * 2007-11-29 2010-10-20 索尼公司 存储器单元

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US6813178B2 (en) * 2003-03-12 2004-11-02 Micron Technology, Inc. Chalcogenide glass constant current device, and its method of fabrication and operation
US7061004B2 (en) * 2003-07-21 2006-06-13 Micron Technology, Inc. Resistance variable memory elements and methods of formation
US7354793B2 (en) * 2004-08-12 2008-04-08 Micron Technology, Inc. Method of forming a PCRAM device incorporating a resistance-variable chalocogenide element
DE102004052645A1 (de) * 2004-10-29 2006-05-04 Infineon Technologies Ag Speicherzelle und Verfahren zu deren Herstellung
JP4577086B2 (ja) 2005-05-18 2010-11-10 横浜ゴム株式会社 難燃性床材
JP5007502B2 (ja) * 2006-01-13 2012-08-22 ソニー株式会社 記憶素子の製造方法
US20070252127A1 (en) * 2006-03-30 2007-11-01 Arnold John C Phase change memory element with a peripheral connection to a thin film electrode and method of manufacture thereof
JP2008135659A (ja) 2006-11-29 2008-06-12 Sony Corp 記憶素子、記憶装置
JP5103932B2 (ja) * 2007-02-16 2012-12-19 ソニー株式会社 記憶素子及び記憶装置
JP2009043873A (ja) 2007-08-08 2009-02-26 Sony Corp 記憶素子および記憶装置
JP5194640B2 (ja) * 2007-08-22 2013-05-08 ソニー株式会社 記憶素子および記憶装置
JP4466738B2 (ja) * 2008-01-09 2010-05-26 ソニー株式会社 記憶素子および記憶装置
JP5397668B2 (ja) * 2008-09-02 2014-01-22 ソニー株式会社 記憶素子および記憶装置
JP2011124511A (ja) * 2009-12-14 2011-06-23 Sony Corp 記憶素子および記憶装置
JP5426409B2 (ja) 2010-01-18 2014-02-26 富士電機株式会社 垂直磁気記録媒体の製造方法
JP5732827B2 (ja) * 2010-02-09 2015-06-10 ソニー株式会社 記憶素子および記憶装置、並びに記憶装置の動作方法
JP2012028468A (ja) * 2010-07-21 2012-02-09 Toshiba Corp 半導体記憶装置

Patent Citations (3)

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US5430320A (en) * 1993-10-30 1995-07-04 Samsung Electronics Co., Ltd. Thin film transistor having a lightly doped drain and an offset structure for suppressing the leakage current
CN101765914A (zh) * 2007-08-06 2010-06-30 索尼公司 存储元件和存储装置
CN101868855A (zh) * 2007-11-29 2010-10-20 索尼公司 存储器单元

Also Published As

Publication number Publication date
US20130001496A1 (en) 2013-01-03
US9058873B2 (en) 2015-06-16
JP2013016529A (ja) 2013-01-24
KR102040329B1 (ko) 2019-11-27
TW201301592A (zh) 2013-01-01
TWI542054B (zh) 2016-07-11
CN102855929A (zh) 2013-01-02
EP2541555A2 (en) 2013-01-02
KR20130007427A (ko) 2013-01-18
EP2541555A3 (en) 2013-05-08
JP5708930B2 (ja) 2015-04-30

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Granted publication date: 20170301