FR2993388B1 - Dispositif microelectronique a memoire programmable - Google Patents

Dispositif microelectronique a memoire programmable

Info

Publication number
FR2993388B1
FR2993388B1 FR1256691A FR1256691A FR2993388B1 FR 2993388 B1 FR2993388 B1 FR 2993388B1 FR 1256691 A FR1256691 A FR 1256691A FR 1256691 A FR1256691 A FR 1256691A FR 2993388 B1 FR2993388 B1 FR 2993388B1
Authority
FR
France
Prior art keywords
microelectronic device
programmable memory
microelectronic
programmable
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1256691A
Other languages
English (en)
Other versions
FR2993388A1 (fr
Inventor
Faiz Dahmani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
X Fab France SAS
Original Assignee
Altis Semiconductor SNC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Altis Semiconductor SNC filed Critical Altis Semiconductor SNC
Priority to FR1256691A priority Critical patent/FR2993388B1/fr
Priority to US13/936,271 priority patent/US20140021433A1/en
Publication of FR2993388A1 publication Critical patent/FR2993388A1/fr
Application granted granted Critical
Publication of FR2993388B1 publication Critical patent/FR2993388B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/32—Non-oxide glass compositions, e.g. binary or ternary halides, sulfides or nitrides of germanium, selenium or tellurium
    • C03C3/321—Chalcogenide glasses, e.g. containing S, Se, Te
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C21/00—Treatment of glass, not in the form of fibres or filaments, by diffusing ions or metals in the surface
    • C03C21/008—Treatment of glass, not in the form of fibres or filaments, by diffusing ions or metals in the surface in solid phase, e.g. using pastes, powders
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0011—RRAM elements whose operation depends upon chemical change comprising conductive bridging RAM [CBRAM] or programming metallization cells [PMCs]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of the switching material, e.g. layer deposition
    • H10N70/026—Formation of the switching material, e.g. layer deposition by physical vapor deposition, e.g. sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/041—Modification of the switching material, e.g. post-treatment, doping
    • H10N70/046—Modification of the switching material, e.g. post-treatment, doping by diffusion, e.g. photo-dissolution
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
    • H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8822—Sulfides, e.g. CuS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8825—Selenides, e.g. GeSe
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/50—Resistive cell structure aspects
    • G11C2213/52—Structure characterized by the electrode material, shape, etc.
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/50—Resistive cell structure aspects
    • G11C2213/55—Structure including two electrodes, a memory active layer and at least two other layers which can be a passive or source or reservoir layer or a less doped memory active layer
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/50—Resistive cell structure aspects
    • G11C2213/56—Structure including two electrodes, a memory active layer and a so called passive or source or reservoir layer which is NOT an electrode, wherein the passive or source or reservoir layer is a source of ions which migrate afterwards in the memory active layer to be only trapped there, to form conductive filaments there or to react with the material of the memory active layer in redox way
FR1256691A 2012-07-11 2012-07-11 Dispositif microelectronique a memoire programmable Expired - Fee Related FR2993388B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR1256691A FR2993388B1 (fr) 2012-07-11 2012-07-11 Dispositif microelectronique a memoire programmable
US13/936,271 US20140021433A1 (en) 2012-07-11 2013-07-08 Microelectronic device with programmable memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1256691A FR2993388B1 (fr) 2012-07-11 2012-07-11 Dispositif microelectronique a memoire programmable

Publications (2)

Publication Number Publication Date
FR2993388A1 FR2993388A1 (fr) 2014-01-17
FR2993388B1 true FR2993388B1 (fr) 2015-04-03

Family

ID=47080675

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1256691A Expired - Fee Related FR2993388B1 (fr) 2012-07-11 2012-07-11 Dispositif microelectronique a memoire programmable

Country Status (2)

Country Link
US (1) US20140021433A1 (fr)
FR (1) FR2993388B1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10658588B2 (en) * 2017-04-06 2020-05-19 Sony Corporation Memory cell switch device
CN108963071A (zh) * 2017-05-24 2018-12-07 中国科学院物理研究所 具有结构调节层的阻变式存储器及其制备方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004020297B4 (de) * 2004-04-26 2007-06-21 Infineon Technologies Ag Verfahren zur Herstellung resistiv schaltender Speicherbauelemente
DE102004040751B4 (de) * 2004-08-23 2009-03-12 Qimonda Ag Resistiv schaltende nicht-flüchtige Speicherzelle auf der Basis von Alkali-Ionendrift, Verfahren zur Herstellung und Verwendung einer Verbindung zur Herstellung
US20080007995A1 (en) * 2006-07-10 2008-01-10 Schwerin Ulrike Gruening-Von Memory cell having a switching active material, and corresponding memory device
KR100810617B1 (ko) * 2007-02-09 2008-03-06 삼성전자주식회사 멀티 비트 상전이 메모리소자 및 그 제조방법
JP5227544B2 (ja) * 2007-07-12 2013-07-03 株式会社日立製作所 半導体装置
JP2009043905A (ja) * 2007-08-08 2009-02-26 Hitachi Ltd 半導体装置
FR2961018B1 (fr) * 2010-06-04 2012-07-20 Altis Semiconductor Snc Procede de fabrication d'un dispositif microelectronique a memoire programmable
JP2012060024A (ja) * 2010-09-10 2012-03-22 Sony Corp 記憶素子および記憶装置
JP2012174766A (ja) * 2011-02-18 2012-09-10 Toshiba Corp 不揮発性抵抗変化素子
JP5708930B2 (ja) * 2011-06-30 2015-04-30 ソニー株式会社 記憶素子およびその製造方法ならびに記憶装置

Also Published As

Publication number Publication date
US20140021433A1 (en) 2014-01-23
FR2993388A1 (fr) 2014-01-17

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Owner name: X-FAB FRANCE, FR

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