FR2961018B1 - Procede de fabrication d'un dispositif microelectronique a memoire programmable - Google Patents
Procede de fabrication d'un dispositif microelectronique a memoire programmableInfo
- Publication number
- FR2961018B1 FR2961018B1 FR1054391A FR1054391A FR2961018B1 FR 2961018 B1 FR2961018 B1 FR 2961018B1 FR 1054391 A FR1054391 A FR 1054391A FR 1054391 A FR1054391 A FR 1054391A FR 2961018 B1 FR2961018 B1 FR 2961018B1
- Authority
- FR
- France
- Prior art keywords
- manufacturing
- microelectronic device
- programmable memory
- memory microelectronic
- programmable
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 238000004377 microelectronic Methods 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/32—Non-oxide glass compositions, e.g. binary or ternary halides, sulfides or nitrides of germanium, selenium or tellurium
- C03C3/321—Chalcogenide glasses, e.g. containing S, Se, Te
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C21/00—Treatment of glass, not in the form of fibres or filaments, by diffusing ions or metals in the surface
- C03C21/008—Treatment of glass, not in the form of fibres or filaments, by diffusing ions or metals in the surface in solid phase, e.g. using pastes, powders
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
- C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/541—Heating or cooling of the substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/584—Non-reactive treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/041—Modification of switching materials after formation, e.g. doping
- H10N70/046—Modification of switching materials after formation, e.g. doping by diffusion, e.g. photo-dissolution
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
- H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8822—Sulfides, e.g. CuS
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1054391A FR2961018B1 (fr) | 2010-06-04 | 2010-06-04 | Procede de fabrication d'un dispositif microelectronique a memoire programmable |
US13/150,351 US8501525B2 (en) | 2010-06-04 | 2011-06-01 | Method of fabrication of programmable memory microelectric device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1054391A FR2961018B1 (fr) | 2010-06-04 | 2010-06-04 | Procede de fabrication d'un dispositif microelectronique a memoire programmable |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2961018A1 FR2961018A1 (fr) | 2011-12-09 |
FR2961018B1 true FR2961018B1 (fr) | 2012-07-20 |
Family
ID=43413699
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1054391A Active FR2961018B1 (fr) | 2010-06-04 | 2010-06-04 | Procede de fabrication d'un dispositif microelectronique a memoire programmable |
Country Status (2)
Country | Link |
---|---|
US (1) | US8501525B2 (fr) |
FR (1) | FR2961018B1 (fr) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2993388B1 (fr) * | 2012-07-11 | 2015-04-03 | Altis Semiconductor Snc | Dispositif microelectronique a memoire programmable |
KR102634805B1 (ko) * | 2018-08-23 | 2024-02-08 | 에스케이하이닉스 주식회사 | 전자 장치 및 그 제조 방법 |
US11276732B2 (en) | 2019-09-20 | 2022-03-15 | International Business Machines Corporation | Semiconductor memory devices formed using selective barrier metal removal |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5761115A (en) | 1996-05-30 | 1998-06-02 | Axon Technologies Corporation | Programmable metallization cell structure and method of making same |
US6734455B2 (en) * | 2001-03-15 | 2004-05-11 | Micron Technology, Inc. | Agglomeration elimination for metal sputter deposition of chalcogenides |
US6709958B2 (en) * | 2001-08-30 | 2004-03-23 | Micron Technology, Inc. | Integrated circuit device and fabrication using metal-doped chalcogenide materials |
US7109056B2 (en) * | 2001-09-20 | 2006-09-19 | Micron Technology, Inc. | Electro-and electroless plating of metal in the manufacture of PCRAM devices |
DE102004029436B4 (de) * | 2004-06-18 | 2009-03-05 | Qimonda Ag | Verfahren zum Herstellen eines Festkörperelektrolytmaterialbereichs |
US20090073743A1 (en) * | 2007-09-17 | 2009-03-19 | Igor Kasko | Method of Manufacturing a Memory Cell, Memory Cell, Integrated Circuit, and Memory Module |
FR2934711B1 (fr) * | 2008-07-29 | 2011-03-11 | Commissariat Energie Atomique | Dispositif memoire et memoire cbram a fiablilite amelioree. |
-
2010
- 2010-06-04 FR FR1054391A patent/FR2961018B1/fr active Active
-
2011
- 2011-06-01 US US13/150,351 patent/US8501525B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
FR2961018A1 (fr) | 2011-12-09 |
US8501525B2 (en) | 2013-08-06 |
US20110297910A1 (en) | 2011-12-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
FR2924270B1 (fr) | Procede de fabrication d'un dispositif electronique | |
EP2449594A4 (fr) | Procédé de fabrication de dispositif à semi-conducteurs | |
FR2973159B1 (fr) | Procede de fabrication d'un substrat de base | |
HK1179760A1 (zh) | 用於次可編程存儲器的具有電熔絲結構的半導體裝置 | |
SG10201403913PA (en) | Method for manufacturing semiconductor device | |
TWI370516B (en) | Semiconductor device manufacturing method | |
FR2954669B1 (fr) | Procede de fabrication d'un dispositif electronique pour pneumatique | |
FR2994332B1 (fr) | Procede d'encapsulation d'un dispositif microelectronique | |
FR2968431B1 (fr) | Procédé de fabrication d'un dispositif a microcircuit | |
FR2962429B1 (fr) | Procede de fabrication d'un composant amortissant les vibrations | |
EP2487709A4 (fr) | Procédé de fabrication d'un dispositif à semi-conducteur | |
FR2973265B1 (fr) | Procede de fabrication par frittage flash d'une piece de forme complexe et dispositif pour la mise en œuvre d'un tel procede. | |
FR2935357B1 (fr) | Procede de fabrication d'un element de nacelle | |
EP2515328A4 (fr) | Procédé de fabrication de dispositif semi-conducteur | |
FR2939637B1 (fr) | Dispositif pour delivrer un stent et procede pour sa fabrication | |
FR2985089B1 (fr) | Transistor et procede de fabrication d'un transistor | |
FR2979481B1 (fr) | Procede de realisation d'un circuit integre tridimensionnel | |
DE102010063806B8 (de) | Herstellungsverfahren für eine Halbleitervorrichtung | |
FR2947784B1 (fr) | Module de camera et son procede de fabrication | |
FR2977178B1 (fr) | Procede de fabrication d'un dispositif comprenant des brasures realisees a partir d'oxalate metallique | |
FR2977944B1 (fr) | Dispositif electronique et son procede de fabrication | |
FR2959350B1 (fr) | Procede de fabrication d?un dispositif microelectronique et dispositif microelectronique ainsi fabrique | |
DK2393989T3 (da) | Fremgangsmåde til fremstilling af en spærreenhed | |
FR2957457B1 (fr) | Procede de fabrication d'un point memoire anti-fusible | |
FR2919741B1 (fr) | Procede de fabrication d'un insert comportant un dispositif rfid |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PLFP | Fee payment |
Year of fee payment: 7 |
|
PLFP | Fee payment |
Year of fee payment: 8 |
|
TP | Transmission of property |
Owner name: X-FAB FRANCE, FR Effective date: 20180516 |
|
PLFP | Fee payment |
Year of fee payment: 9 |
|
PLFP | Fee payment |
Year of fee payment: 11 |
|
PLFP | Fee payment |
Year of fee payment: 12 |
|
PLFP | Fee payment |
Year of fee payment: 13 |
|
PLFP | Fee payment |
Year of fee payment: 14 |