HK1179760A1 - 用於次可編程存儲器的具有電熔絲結構的半導體裝置 - Google Patents

用於次可編程存儲器的具有電熔絲結構的半導體裝置

Info

Publication number
HK1179760A1
HK1179760A1 HK13107009.9A HK13107009A HK1179760A1 HK 1179760 A1 HK1179760 A1 HK 1179760A1 HK 13107009 A HK13107009 A HK 13107009A HK 1179760 A1 HK1179760 A1 HK 1179760A1
Authority
HK
Hong Kong
Prior art keywords
semiconductor device
programmable memory
time programmable
efuse structure
efuse
Prior art date
Application number
HK13107009.9A
Other languages
English (en)
Inventor
陳向東
夏維
Original Assignee
美國博通公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美國博通公司 filed Critical 美國博通公司
Publication of HK1179760A1 publication Critical patent/HK1179760A1/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/101—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including resistors or capacitors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
HK13107009.9A 2011-09-29 2013-06-14 用於次可編程存儲器的具有電熔絲結構的半導體裝置 HK1179760A1 (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13/249,022 US8716831B2 (en) 2011-09-29 2011-09-29 One time programmable structure using a gate last high-K metal gate process

Publications (1)

Publication Number Publication Date
HK1179760A1 true HK1179760A1 (zh) 2013-10-04

Family

ID=47991777

Family Applications (1)

Application Number Title Priority Date Filing Date
HK13107009.9A HK1179760A1 (zh) 2011-09-29 2013-06-14 用於次可編程存儲器的具有電熔絲結構的半導體裝置

Country Status (4)

Country Link
US (1) US8716831B2 (zh)
CN (2) CN103035612B (zh)
HK (1) HK1179760A1 (zh)
TW (1) TWI503959B (zh)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10249379B2 (en) * 2010-08-20 2019-04-02 Attopsemi Technology Co., Ltd One-time programmable devices having program selector for electrical fuses with extended area
US8716831B2 (en) * 2011-09-29 2014-05-06 Broadcom Corporation One time programmable structure using a gate last high-K metal gate process
US8981523B2 (en) 2012-03-14 2015-03-17 International Business Machines Corporation Programmable fuse structure and methods of forming
KR101386703B1 (ko) * 2012-09-28 2014-05-07 매그나칩 반도체 유한회사 반도체 소자의 전기 퓨즈 및 그 제조방법
KR102241180B1 (ko) * 2013-06-25 2021-04-16 인텔 코포레이션 Cmos 호환가능 폴리사이드 퓨즈 구조체를 갖는 반도체 구조체
US9293414B2 (en) 2013-06-26 2016-03-22 Globalfoundries Inc. Electronic fuse having a substantially uniform thermal profile
US8981492B2 (en) * 2013-06-26 2015-03-17 Globalfoundries Inc. Methods of forming an e-fuse for an integrated circuit product and the resulting integrated circuit product
KR102096614B1 (ko) * 2013-10-11 2020-04-03 삼성전자주식회사 반도체 장치의 이-퓨즈 구조체
CN104681422B (zh) * 2013-11-27 2018-09-07 中芯国际集成电路制造(上海)有限公司 半导体器件的形成方法
KR102471641B1 (ko) 2016-02-04 2022-11-29 에스케이하이닉스 주식회사 퓨즈구조 및 그를 포함하는 반도체장치
CN109411445B (zh) * 2016-12-02 2020-08-21 乐清市风杰电子科技有限公司 一种多晶硅熔丝结构的制造方法
US10229920B1 (en) 2017-11-27 2019-03-12 International Business Machines Corporation One-time programmable vertical field-effect transistor
CN109037190B (zh) * 2018-07-27 2020-07-10 上海华力集成电路制造有限公司 一种电熔丝结构及其制造方法
US10818592B1 (en) * 2019-04-29 2020-10-27 Nanya Technology Corporation Semiconductor memory device including decoupling capacitor array arranged overlying one-time programmable device
US10825823B1 (en) 2019-04-29 2020-11-03 Nanya Technology Corporation Semiconductor memory device including decoupling capacitor array arranged overlying one-time programmable device
US20220415911A1 (en) * 2021-06-24 2022-12-29 Taiwan Semiconductor Manufacturing Company, Ltd. Multiple pattern metal fuse device, layout, and method

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8023338B2 (en) * 2006-12-22 2011-09-20 Sidense Corp. Dual function data register
US7723180B2 (en) * 2008-04-11 2010-05-25 Sandisk 3D Llc Multilevel nonvolatile memory device containing a carbon storage material and methods of making and using same
US8890260B2 (en) * 2009-09-04 2014-11-18 Taiwan Semiconductor Manufacturing Company, Ltd. Polysilicon design for replacement gate technology
US8686536B2 (en) * 2009-10-30 2014-04-01 Taiwan Semiconductor Manufacturing Company, Ltd. Electrical fuse structure and method of formation
US8716831B2 (en) * 2011-09-29 2014-05-06 Broadcom Corporation One time programmable structure using a gate last high-K metal gate process

Also Published As

Publication number Publication date
TW201316494A (zh) 2013-04-16
CN103035612A (zh) 2013-04-10
CN203071075U (zh) 2013-07-17
US20130082347A1 (en) 2013-04-04
US8716831B2 (en) 2014-05-06
CN103035612B (zh) 2015-11-25
TWI503959B (zh) 2015-10-11

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