SG11201503626VA - A memory device - Google Patents
A memory deviceInfo
- Publication number
- SG11201503626VA SG11201503626VA SG11201503626VA SG11201503626VA SG11201503626VA SG 11201503626V A SG11201503626V A SG 11201503626VA SG 11201503626V A SG11201503626V A SG 11201503626VA SG 11201503626V A SG11201503626V A SG 11201503626VA SG 11201503626V A SG11201503626V A SG 11201503626VA
- Authority
- SG
- Singapore
- Prior art keywords
- memory device
- memory
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1673—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
- G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
- G11C19/0808—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
- G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
- G11C19/0808—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation
- G11C19/0833—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation using magnetic domain interaction
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
- G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
- G11C19/0808—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation
- G11C19/0841—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation using electric current
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361748316P | 2013-01-02 | 2013-01-02 | |
| PCT/SG2014/000002 WO2014107140A1 (en) | 2013-01-02 | 2014-01-02 | A memory device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201503626VA true SG11201503626VA (en) | 2015-06-29 |
Family
ID=51062383
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201503626VA SG11201503626VA (en) | 2013-01-02 | 2014-01-02 | A memory device |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US9502090B2 (en) |
| SG (1) | SG11201503626VA (en) |
| WO (1) | WO2014107140A1 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6861996B2 (en) * | 2015-05-14 | 2021-04-21 | 国立大学法人東北大学 | Magnetoresistive element and magnetic memory device |
| KR101746698B1 (en) * | 2016-03-07 | 2017-06-14 | 울산과학기술원 | Skyrmion diode and method of manufacturing the same |
| KR20210039525A (en) | 2019-10-01 | 2021-04-12 | 삼성전자주식회사 | Magnetic memory device and method for manufacturing the same |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7492622B2 (en) * | 2007-01-12 | 2009-02-17 | International Business Machines Corporation | Sequence of current pulses for depinning magnetic domain walls |
| US7710769B2 (en) * | 2007-05-09 | 2010-05-04 | Ingenia Holdings Uk Limited | Data storage device and method |
| WO2008139131A1 (en) * | 2007-05-09 | 2008-11-20 | Ingenia Holdings (Uk) Limited | Data storage device and method |
| KR100900960B1 (en) * | 2007-08-09 | 2009-06-08 | 인하대학교 산학협력단 | Magnetic flux density driven magnetic domain wall moving memory device, operating method of the same, and forming method of the same |
| KR100907471B1 (en) * | 2007-12-06 | 2009-07-13 | 고려대학교 산학협력단 | Nano wire and Memory device according to current-induced domain wall displacement using it |
| KR101430170B1 (en) * | 2008-06-16 | 2014-08-13 | 삼성전자주식회사 | Method of operating information storage device using magnetic domain wall movement |
| US8279667B2 (en) * | 2009-05-08 | 2012-10-02 | Samsung Electronics Co., Ltd. | Integrated circuit memory systems and program methods thereof including a magnetic track memory array using magnetic domain wall movement |
| US9208845B2 (en) * | 2011-11-15 | 2015-12-08 | Massachusetts Instiute Of Technology | Low energy magnetic domain wall logic device |
| JP6071401B2 (en) * | 2012-10-11 | 2017-02-01 | 株式会社東芝 | Magnetic memory |
-
2014
- 2014-01-02 US US14/759,073 patent/US9502090B2/en active Active
- 2014-01-02 SG SG11201503626VA patent/SG11201503626VA/en unknown
- 2014-01-02 WO PCT/SG2014/000002 patent/WO2014107140A1/en active Application Filing
Also Published As
| Publication number | Publication date |
|---|---|
| US20150371696A1 (en) | 2015-12-24 |
| WO2014107140A1 (en) | 2014-07-10 |
| US9502090B2 (en) | 2016-11-22 |
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