CN102832841B - Modularized multi-level converter with auxiliary diode - Google Patents
Modularized multi-level converter with auxiliary diode Download PDFInfo
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- CN102832841B CN102832841B CN201210308025.9A CN201210308025A CN102832841B CN 102832841 B CN102832841 B CN 102832841B CN 201210308025 A CN201210308025 A CN 201210308025A CN 102832841 B CN102832841 B CN 102832841B
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/20—Active power filtering [APF]
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/30—Reactive power compensation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/40—Arrangements for reducing harmonics
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Abstract
The invention relates to a modularized multi-level converter with an auxiliary diode. The modularized multi-level converter comprises a three-phase valve body, and three active energy feedback circuits respectively connected to the three-phase valve body, wherein each phase of valve body comprises 2M half-bridge inversion units and 2M-1 auxiliary diodes; direct current capacitors of the 1-(2M-1)th serially connected half-bridge inversion units are respectively connected with one auxiliary diode, and the final (2M)th half-bridge inversion unit is serially connected to form the valve body; the 1-Mth half-bridge inversion units form the upper-half part of the valve body to output a negative polarity voltage; and the (M+1)th to 2Mth half-bridge inversion units form the lower-half part of the valve body to output a positive polarity voltage. The auxiliary diodes and the active energy feedback circuits form a capacitor voltage sharing loop, the modularized multi-level converter realizes capacitance self voltage sharing effect, and realizes that the unit capacitance voltage is measured by using less direct current voltage sensors, thus the detection and the control of multi-level topology are greatly simplified. The modularized multi-level converter can be used in occasions such as reaction compensation and harmonic treatment of a medium-voltage or high-voltage power grid.
Description
Technical field
The present invention relates to a kind of multi-level converter topological structure, particularly about a kind of band booster diode modular multilevel converter of the occasion such as reactive power compensation and harmonic wave control for medium-pressure or high pressure electrical network.
Background technology
Along with the development of power electronic technology, high voltage, large capacity has become the important development direction of power electronic technology, and high voltage, jumbo converters is more and more applied in high voltage and large capacity occasion, as: VSC-HVDC and Light HVDC Transmission, static reacance generator (the Static Var Generator of medium-pressure or high pressure, SVG), active filter (Active Power Filter, APF), high voltage converter, also has novel generation technology: wind power generation, photovoltaic generation etc., and high voltage, jumbo converters is just obtaining comprehensive concern, there are huge development and application space.
Research to high voltage, jumbo multilevel power electronic converter in recent years and application are more and more, comprise many level of diode clamp structure, many level of flying capacitor structure, H bridge cascaded multilevel structure, modular multilevel transformer configuration (modular multilevel converter, MMC) and mixed structure etc.Wherein, the topological structure that is applicable to medium-pressure or high pressure electrical network and has a successful Application comparatively at medium voltage network is mainly: H bridge cascade multilevel converter topological sum MMC topology.H bridge cascade multilevel converter due to simple in structure, modularity is strong, by series connection be easy to by voltage raise, can be directly incorporated into electrical network without transformer, aspect middle pressure reactive power compensation, having more application.MMC topology is a kind of comparatively novel topological structure, this topological structure can contain DC bus, be conducive to carry out the transmission of active power, aspect high voltage direct current transmission, there is successful Application, also had by MMC topology the research for medium voltage network reactive power compensation, this topology is current study hotspot.
In this two classes topology of H bridge cascade multilevel converter topological sum MMC topology, cell capacitance is in suspended state, in actual moving process, due to the loss difference of unit, drive that signal is undesirable factors such as time delay, make the capacitance voltage of unit in valve body in the situation that not controlled specially, occur imbalance problem, this is a major issue in this two classes multi-level converter topology application.Its solution is mainly by following two kinds of approach at present: a kind of is to assist the mode of equalizer circuit to carry out the Pressure and Control of cell capacitance voltage by hardware; Another kind is by control algolithm, the direct voltage of each unit in valve body to be controlled separately, realizes all and pressing.
In the method for the auxiliary equalizer circuit of hardware, can Power Exchange auxiliary circuit etc. form.Power Exchange Auxiliary Circuit Method is the DC capacitor configuration subordinate inverter for each unit, and by isolating transformer, the auxiliary circuit of unit is coupled together, and carries out energy exchange, thus the direct voltage of balance unit.Under this method, capacitance voltage can obtain preferably balanced control, but each unit has increased subordinate inverter, isolating transformer etc., and control accordingly, testing circuit, the complexity of circuit is increased greatly, and cost is also enhanced.The balance control of on the other hand, all pressing algorithm to realize capacitance voltage by increase capacitance voltage is more popular recently research contents.Because unit in valve body connects with series connection form, valve body output voltage is unit inverter output voltage sum, therefore in the situation that not changing valve body output voltage, and adjustment unit output voltage flexibly, thereby coordinate valve body electric current to adjust the active power of each unit, realize Pressure and Control.Current method can roughly be summarized as follows.
Peng F, McKeever J W, in " A power line conditioner using cascade multilevel inverters for distribution systems.IEEE Transactions on Industrial Applications; 1998; 34 (6): 1293-1298. " literary composition that Adams D J. delivers, study pulse rotation and realized cell capacitance voltage balance control.For the cascade multilevel converter of power frequency copped wave, by the trigger impulse of rotation switching tube, make the active power of unit more balanced, be conducive to reduce cell capacitance Voltage unbalance degree, eliminate the unbalanced effect of capacitance voltage but often do not reach, can be used as auxiliary control device.
Liu Z, Liu B, Duan S, the amplitude and the phase place that in " A novel DC capacitor voltage balance control method for cascade multilevel STATCOM.IEEE Transactions on Power Electronics; 2012; 27 (1): 14-26. " literary composition that et al. delivers, have proposed by regulating each cells modulate ripple are carried out regulation output voltage, in the time that equipment carries out reactive power compensation, valve body output fundamental current, and phase place only may leading or hysteresis line voltage pi/2.According to phase place and the amplitude of power network current adjustment unit output voltage, and then the active power of adjustment unit, realize the equilibrium control of capacitance voltage.When but this method is applied to harmonic compensation, valve body output current mainly contains harmonic component, and the active power that harmonic current and fundamental voltage produce is zero, and the fundametal compoment of valve body output current only has very little active current, therefore this method is when the harmonic compensation, all pressure energy force rate a little less than.
Qiu Y, He Y, " the A DC voltage control method of cascaded H-bridge inverter for power quality conditioner.International Symposium on Industrial Electronics Conference that Liu Jinjun. delivers, 2010:2879-2884. " proposed in each switch periods in a literary composition, according to valve body current conditions, adjustment unit duty cycle of switching changes output voltage, the active power of unit in each switch periods is adjusted, and then the average active power of adjustment unit, realize capacitor voltage equalizing.This method not only can be for reactive-load compensation equipment, also can be for harmonic compensation equipment, but this method also depends on the electric current of valve body very much, need in each switch periods, calculate the duty cycle of switching regulated quantity of unit capacitance voltage simultaneously.In the time that converter is used as medium voltage network equipment, valve body number of unit is larger, and Pressure and Control amount of calculation is just very large, can extend digitial controller control cycle, and can obviously reduce converter current ring phase margin, affect response speed, even cause the vibration of electric current loop.
In above-mentioned pressure equalizing control method, voltage detecting and control circuit all need to be set in each unit, make the complexity of control circuit higher.There is limited evidence currently of is seen the research report of the detection control to how simplifying multi-level converter topology.
In sum, solve the above-mentioned key issue that power electronics multi-level converter exists in medium voltage network application, study novel applicable medium-pressure or high pressure electrical network many level topological structure and corresponding control method, for improving, the electric pressure of converters and practicality and reliability are most important, simultaneously green for building, intelligent grid is significant.
Summary of the invention
For the problems referred to above, the object of this invention is to provide one and can realize electric capacity from all pressing, simplify the band booster diode modular multilevel converter of many level topological structure and control.
For achieving the above object, the present invention takes following technical scheme: a kind of band booster diode modular multilevel converter, is characterized in that: it comprises that the valve body of three-phase Y-connection and three are connected to the active energy back circuit on valve body described in three-phase; Every mutually described valve body includes 2M semi-bridge inversion unit and 2M-1 booster diode, N=2M-1, and M is natural number; To the DC bus capacitor of the described semi-bridge inversion unit of 2M-1 series connection, connect respectively a described booster diode at first, and last 2M the described semi-bridge inversion unit of connecting, form described valve body; The first half valve body of valve body described in a described semi-bridge inversion cell formation from first to M, output negative pole voltage; The latter half valve body of valve body described in M+1 to 2M described semi-bridge inversion cell formation, output cathode voltage; Each described semi-bridge inversion unit includes two power switch pipes and a DC capacitor; After described two power switch pipes series connection, form inverter bridge leg, described inverter bridge leg is in parallel with described DC capacitor, and the mid point of described inverter bridge leg connects the DC capacitor negative electrode of a upper adjacent described semi-bridge inversion unit as ac output end, wherein, the ac output end that is positioned at the semi-bridge inversion unit of described valve body top layer connects electrical network by inductance; Described DC capacitor negative electrode connects the inverter bridge leg mid point of next adjacent described semi-bridge inversion unit; In each described semi-bridge inversion unit with described booster diode, the negative electrode of described booster diode connects respectively the anode of booster diode in the anode of DC capacitor of this semi-bridge inversion unit and a upper adjacent semi-bridge inversion unit, the negative electrode of booster diode in the next adjacent semi-bridge inversion of the anodic bonding unit of this booster diode; Be positioned at 2M the common unit that described semi-bridge inversion cell formation three-phase valve body connects of the described valve body bottom.
The DC capacitor C of 2M semi-bridge inversion unit of described three-phase valve body
jgeneral DC busbar.
Each described power switch pipe all adopts insulated gate bipolar thyristor, gate turn off thyristor or integral gate change transistor.
Each described active energy back circuit includes an inverter, an isolating transformer and one group of rectifier bridge being made up of four diodes; The direct voltage of described valve body top layer semi-bridge inversion unit output changes alternating voltage into through described inverter, inputting described isolating transformer isolates, input described rectifier bridge through described isolating transformer secondary side, described rectifier bridge DC output end connects the common unit by described valve body bottom semi-bridge inversion cell formation.
Each described active energy back circuit forms by isolating transformer, capacitance and the rectifier bridge that is made up of four diodes; The elementary one end of described isolating transformer connects the inverter bridge leg mid point of described valve body top layer semi-bridge inversion unit, the elementary other end of described isolating transformer connects described capacitance one end, and the other end of described capacitance connects the DC bus negative pole of described valve body top layer semi-bridge inversion unit; Described isolating transformer secondary side connects the ac input end of described rectifier bridge, the direct-flow positive pole output of described rectifier bridge connects the positive pole of described valve body bottom semi-bridge inversion unit DC bus, and the output of the direct current negative pole of described rectifier bridge connects the negative pole of described valve body bottom semi-bridge inversion unit DC bus.
Described isolating transformer no-load voltage ratio is 1:2.
The present invention is owing to taking above technical scheme, it has the following advantages: 1, the present invention is owing to adopting the valve body of three-phase Y-connection, and configure active energy back circuit in every phase valve body one side, and first of every phase valve body connects booster diode to DC bus capacitor place, 2M-1 semi-bridge inversion unit, therefore can realize certainly all pressing of all semi-bridge inversions unit by booster diode and active energy back circuit, and can be totally independent of the electric current of main circuit, the not impact of acceptor's circuit voltage electric current from Pressure and Control.2, the present invention due to semi-bridge inversion cell capacitance in every phase valve body all press with valve body in inversion unit number irrelevant, be therefore easy to realize high voltage output.3, the present invention, owing to only having the capacitance voltage of little unit to need to detect in whole circuit topological structure, has greatly reduced the number of direct current voltage sensor, is conducive to simplified measurement and control circuit.4, the present invention is owing to adopting active energy back circuit only to comprise an isolating transformer, a capacitance and one group of rectifier bridge, and it is simple in structure, has greatly simplified the structure of whole circuit.5, the present invention is because the capacitance voltage in whole circuit topological structure is all pressed by booster diode and active energy back circuit and realized, control simple, not increasing and increase with semi-bridge inversion number of unit, therefore can not exert an influence to the control of whole main circuit function, the more complicated function of tonic chord control function of convenient realization.The present invention can be widely used in the converters topological structure of high voltage, large capacity occasion.
Brief description of the drawings
Fig. 1 is overall structure schematic diagram of the present invention;
Fig. 2 is semi-bridge inversion cellular construction schematic diagram of the present invention;
Fig. 3 is that valve body of the present invention connects active energy back electrical block diagram;
Fig. 4 is that active energy back circuit of the present invention adopts the active energy back circuit diagram without extra active switch, and active energy back circuit shares the inverter in valve body top layer semi-bridge inversion unit main circuit;
Fig. 5 is the structural representation that active energy back circuit of the present invention adopts separate inverter unit;
Fig. 6 is the circuit mode schematic diagram that the different on off states of four kinds of adjacent two the semi-bridge inversion unit of the present invention form; Fig. 6 (a) is circuit mode 1 schematic diagram, and Fig. 6 (b) is circuit mode 2 schematic diagrames, and Fig. 6 (c) is circuit mode 3 schematic diagrames, and Fig. 6 (d) is circuit mode 4 schematic diagrames;
Fig. 7 is when in the embodiment of the present invention, 7 level band booster diode modular multilevel converters are operated in harmonic compensation state, the capacitance voltage oscillogram of a phase valve body;
Fig. 8 is the partial enlarged drawing in Fig. 7 steady-state process;
Fig. 9 is when in the embodiment of the present invention, 7 level band booster diode modular multilevel converters are operated in idle output state, the capacitance voltage waveform of a phase valve body;
Figure 10 is that active energy back circuit of the present invention adopts independent half-bridge inverter structural representation.
Embodiment
The invention provides a kind of band booster diode modular multilevel converter (MMC), it is mainly used for the converters topological structure of high voltage, large capacity occasion, this converter topology structure can effectively solve the unbalanced problem of capacitance voltage in current many level topological structure, and can be applicable to the occasion such as reactive power compensation and harmonic wave control of medium-pressure or high pressure electrical network.Below in conjunction with drawings and Examples, the present invention is described in detail.
As shown in Figure 1, the present invention includes valve body 10 and three active energy back circuit (AEFC) 20 that are connected on three-phase valve body 10 of three-phase Y-connection.
Every phase valve body 10 includes 2M semi-bridge inversion unit 11 and (2M-1) individual booster diode D
n, wherein, N=2M-1, M is random natural number, concrete value is determined by requirement of engineering.To the DC bus capacitor of the semi-bridge inversion unit 11 of (2M-1) individual series connection, connect respectively a booster diode D at first
n, and last 2M the semi-bridge inversion unit 11 of connecting, form valve body 10.Wherein, form the first half valve body of valve body 10 from first to M semi-bridge inversion unit 11, output negative pole voltage; M+1 forms the latter half valve body of valve body 10, output cathode voltage to 2M semi-bridge inversion unit 11.
In above-described embodiment, as shown in Figure 2, each semi-bridge inversion unit 11 includes two power switch tube S
j1, S
j2with a DC capacitor C
j.Two power switch tube S
j1and S
j2after series connection, form inverter bridge leg 111, inverter bridge leg 111 and DC capacitor C
jparallel connection, and the mid point of inverter bridge leg 111 is as ac output end, connects the DC capacitor C of a j-1 adjacent semi-bridge inversion unit 11
j-1negative electrode, wherein, the ac output end that is positioned at the semi-bridge inversion unit 11 of valve body 10 top layers connects electrical network by inductance; DC capacitor C
jnegative electrode connects inverter bridge leg 111 mid points of next j+1 adjacent semi-bridge inversion unit 11.At each band booster diode D
nsemi-bridge inversion unit 11 in, booster diode D
nnegative electrode connect respectively the DC capacitor C of this semi-bridge inversion unit 11
janode and a upper adjacent semi-bridge inversion unit 11 in booster diode D
n-1anode, this booster diode D
nthe next adjacent semi-bridge inversion of anodic bonding unit 11 in booster diode D
n+1negative electrode.Wherein, each power switch tube S
j1, S
j2all can adopt insulated gate bipolar thyristor (IGBT), gate turn off thyristor (GTO) or integral gate change transistor (IGCT).
In the various embodiments described above, 2M the semi-bridge inversion unit 11 that is positioned at valve body 10 bottoms forms the common unit that three-phase valve body 10 connects.The DC capacitor C of 2M semi-bridge inversion unit 11 of three-phase valve body 10
jcan general DC busbar, thus be conducive to three-phase valve body 10 DC bus capacitor C
jthe balance of voltage, also can untie the electric capacity of three-phase common DC bus separately, becomes three valve bodies that work alone 10.
In the various embodiments described above, as shown in Figure 3, Figure 4, each active energy back circuit (AEFC) 20 all adopts a kind of AEFC without extra active switch, and this circuit is only by isolating transformer (or being called coupling inductance) T
ac, capacitance C
acform with the rectifier bridge 21 being formed by four diodes, in band booster diode modular multilevel converter topology of the present invention, this AEFC shares the inverter (being inverter bridge leg 111) in valve body 10 top layer semi-bridge inversion unit 11 main circuits, without separately adding active switch and control circuit.Isolating transformer T
acelementary one end connects inverter bridge leg 111 mid points (being one end that semi-bridge inversion unit 11 exchanges output) of valve body 10 top layer semi-bridge inversion unit 11, isolating transformer T
acthe elementary other end connects capacitance C
acone end, capacitance C
acthe other end connect the DC bus negative pole (being the semi-bridge inversion unit 11 ac output end other ends) of valve body 10 top layer semi-bridge inversion unit 11.Isolating transformer T
acsecondary side connects the ac input end of rectifier bridge 24, the direct-flow positive pole output of rectifier bridge 24 connects the positive pole of valve body 10 bottom semi-bridge inversion unit 11 DC buss, and the output of the direct current negative pole of rectifier bridge 24 connects the negative pole of valve body 10 bottom semi-bridge inversion unit 11 DC buss.The direct voltage of valve body 10 top layer semi-bridge inversion unit 11 is through capacitance C
acchange into after alternating voltage, through isolating transformer T
acisolate, then input and isolating transformer T
acthe rectifier bridge 24 that secondary side connects, rectifier bridge 24 direct current outputs connect the DC bus of bottom semi-bridge inversion unit 11, thereby realize energy and be transferred to bottom semi-bridge inversion unit 11 by top layer semi-bridge inversion unit 11, realize the capacitance voltage equilibrium of top layer semi-bridge inversion unit 11 and bottom semi-bridge inversion unit 11.Wherein, isolating transformer T
acbe operated in the switching frequency of power switch pipe, i.e. the carrier frequency of pulse-width modulation, isolating transformer T
acwith capacitance C
acvolume can be smaller.
In the various embodiments described above, as shown in Figure 5, each AEFC 20 can also adopt the AEFC with separate inverter unit structure, and it comprises inverter 22, isolating transformer 23 and rectifier bridge 24.The direct voltage that valve body 10 top layer semi-bridge inversion unit 11 are exported changes alternating voltage into through inverter 22, this alternating voltage input isolating transformer 23 is isolated, through isolating transformer 23 secondary side input rectifying bridges 24, rectifier bridge 24 DC output ends connect the common unit being made up of valve body 10 bottom semi-bridge inversion unit 11, thereby realize energy and be transferred to bottom semi-bridge inversion unit 11 by top layer semi-bridge inversion unit 11, realized the capacitance voltage equilibrium of top layer semi-bridge inversion unit 11 and bottom semi-bridge inversion unit 11.
In sum, due in band booster diode modular multilevel converter topology of the present invention, circuit working principle between each half-bridge inversion unit 11 is identical, for convenience of description for the purpose of, the present invention is only introduced the circuit working principle of contiguous two basic semi-bridge inversion unit 11.Simultaneously, although each valve body 10 is divided into positive polarity and two parts of negative polarity, and this two-part operation principle is also similarly, therefore the present invention describes as an example of the working condition of two the semi-bridge inversion unit 11 of vicinity in output cathode voltage segment in valve body 10 example.
As shown in Fig. 6 (a)～Fig. 6 (d), wherein S
j1and S
j2the upper and lower power switch of j semi-bridge inversion unit 11, C
djfor the DC bus capacitor of this semi-bridge inversion unit 11, and D
jit is the booster diode of this semi-bridge inversion unit 11; S
(j+1) 1and S
(j+1) 2the upper and lower power switch of j+1 semi-bridge inversion unit 11, C
dj+1for the DC bus capacitor of this semi-bridge inversion unit 11, and D
j+1be the booster diode of this semi-bridge inversion unit 11, each circuit working mode after semi-bridge inversion unit 11 series connection of these two vicinities is as follows:
In the circuit mode forming at four kinds of different on off states of contiguous two semi-bridge inversion unit 11, for circuit mode 1(as shown in Figure 6 (a)) and circuit mode 3(as shown in Figure 6 (c)), regardless of the capacitance voltage magnitude relationship of two semi-bridge inversion unit 11, booster diode D
jcan conducting; And for circuit mode 2(as shown in Figure 6 (b)) and circuit mode 4(as shown in Fig. 6 (d)), i.e. power switch S
(j+1) 2the mode of conducting is booster diode D
jthe circuit mode of possible conducting.If it is u that two semi-bridge inversion unit 11 capacitance voltages close
dj<u
dj+1, while being switched to circuit mode 2 or circuit mode 4, power switch S
(j+1) 2conducting, booster diode D
jwill conducting, produce equalizing current i
acj, capacitor C
dj+1can be to C
djcharging.When circuit in the course of the work, switch S
(j+1) 2can drive under the effect of signal at PWM, constantly turn on and off, this makes capacitor C
dj+1can be repeatedly to C
djcharging, until u
dj=u
dj+1.In actual applications,, therefore can't there is u in the power switch of the each semi-bridge inversion unit 11 copped wave state in upper frequency always
djbe starkly lower than u
dj+1situation, and because circuit exists parasitic parameter, equalizing current i
acjcan be smaller.
For reverse voltage output in valve body 10, its operation principle and positive polarity voltage output are similar, can analyze by above-mentioned form, here do not repeat, thereby, in by 2M the valve body 10 with the basic semi-bridge inversion of booster diode unit 11 MMC in series, semi-bridge inversion unit 11 capacitance voltages can be arranged in the following order:
u
d1≥u
d2≥…≥u
dj≥…≥u
dN-1≥u
dN （1）
Hence one can see that, all press by can only realize the unidirectional of cell capacitance with booster diode elementary cell MMC valve body 10 topologys in series, can not realize the equilibrium of whole valve body cell capacitance voltage, therefore the present invention adopts AEFC20 to improve the uniform voltage function of the capacitance voltage of this topology.
For every phase valve body 10, it is as the formula (1) that its capacitance voltage closes.If the active loss of semi-bridge inversion unit 11 is closed and is in valve body 10:
P
loss1>P
loss2>…>P
lossj>…>P
lossN （2）
In valve body 10, semi-bridge inversion unit 11 capacitance voltages just trend towards equilibrium, but the not necessarily above-mentioned relation of relation of semi-bridge inversion unit 11 active loss, therefore the capacitance voltage of valve body 10 top layer semi-bridge inversion unit 11 may be much higher than the capacitance voltage of bottom semi-bridge inversion unit 11, and the present invention adopts AEFC20 to control top layer and bottom semi-bridge inversion unit 11 capacitance voltages.Utilize AEFC 20 that valve body 10 top layer semi-bridge inversion unit 11 and bottom semi-bridge inversion unit 11 are coupled together, by AEFC 20, the energy of top layer semi-bridge inversion unit 11 is passed to bottom semi-bridge inversion unit 11, reduce the poor of its capacitance voltage, the two is equated, that is:
u
d1＝u
dN。（3）
Inequality (1) just becomes congruence relation, realize all semi-bridge inversions unit 11 capacitance voltages in valve body 10 from all pressing.
In the time adopting without extra active switch AEFC 20, when this circuit working, top layer semi-bridge inversion unit 11 can output PWM type pulse voltage u
ac, in this voltage, contain DC component and low frequency component, they will be easy to by isolating transformer T
acmagnetizing inductance L
m, and fall at capacitance C
acupper, voltage u like this
aclow frequency component just substantially can sensed isolating transformer T
acsecondary side; And voltage u
acswitching frequency component will be easy to by capacitance C
acand fall at magnetizing inductance L
mupper, most switching frequency components can sensed isolating transformer T
acsecondary winding on, isolating transformer T so
acsecondary side can induce impulse type voltage, become direct voltage through rectifier circuit, thereby can realize the component of voltage that utilizes switching frequency by the Energy Transfer of valve body 10 top layer semi-bridge inversion unit 11 to bottom semi-bridge inversion unit 11, realize DC capacitor voltage equilibrium.Wherein, isolating transformer T
acno-load voltage ratio is 1:2, i.e. time limit number of turn w
t=2.
In addition, because every phase valve body 10 is bipolar voltage output, bottom does not bear over the ground as the common semi-bridge inversion unit 11 of common unit or the DC common mode of electrical network mid point like this, has reduced insulating requirements.Each valve body 10 has 2M semi-bridge inversion unit 11, can export 2M+1 level voltage, and three-phase valve body 10 adopts star structure to connect, and three-phase valve body 10 bottom semi-bridge inversion unit 11 can general DC busbar, whole like this circuit need be only common unit in the top layer semi-bridge inversion unit 11 of 3 valve bodies 10 and a common semi-bridge inversion unit 11() configuration voltages transducer, totally 4, be greatly less than traditional structure.In addition, every phase valve body 10 configures the AEFC without subordinate inverter, to realize certainly all pressing of valve body 10 DC capacitors.The existence of common unit makes to reduce the DC voltage fluctuation amplitude of this unit in the time of compensation symmetrical component, and provides three-phase valve body 10 energy exchange passages, is conducive to the capacitance voltage of balance three-phase valve body 10.
Below by specific embodiment, principle of the present invention is further introduced.
Embodiment: according to principle of the present invention, 7 level band booster diode modular multilevel converter model machines of Y-connection are built, in the time that it is operated in harmonic compensation state, can obtain the overall condition waveform of experimental result (as Fig. 7, shown in Fig. 8), wherein, waveform order is from top to bottom successively: electrical network a phase current, with a phase valve body electric current of booster diode MMC, a phase valve body common unit capacitance voltage, a is the 5th grade of cell capacitance voltage mutually, a is the 4th grade of cell capacitance voltage mutually, a phase 3rd level cell capacitance voltage, a is the 2nd grade of cell capacitance voltage mutually, a is the 1st grade of cell capacitance voltage mutually.This shows, the capacitance voltages at different levels in stable state valve body are balanced good.In the time that 7 level band booster diode modular multilevel converter model machines are operated in idle output state (as shown in Figure 9), the waveform sequence consensus (as shown in Figure 7) of exporting the experimental waveform order of its output is operated in harmonic compensation state during with it, this shows, due to output single-phase power, there is power frequency fluctuation in the capacitance voltage of unit at different levels, but the capacitance voltage mean value of valve body unit at different levels still keeps compared with poised state.
The various embodiments described above are only for illustrating the present invention, the connection of each parts and structure all can change to some extent, for example AEFC 20 can also adopt other various ways, as shown in figure 10, adopt half-bridge structure inverter to replace the inverter having in the active energy back circuit of separate inverter unit.On the basis of technical solution of the present invention, all improvement and equivalents that according to the principle of the invention, the connection to indivedual parts and structure are carried out, all should not get rid of outside protection scope of the present invention.
Claims (5)
1. a band booster diode modular multilevel converter, is characterized in that: it comprises that the valve body of three-phase Y-connection and three are connected to the active energy back circuit on valve body described in three-phase; Every mutually described valve body includes 2M semi-bridge inversion unit and 2M-1 booster diode, and M is natural number; To the DC bus capacitor of the described semi-bridge inversion unit of 2M-1 series connection, connect respectively a described booster diode at first, and last 2M the described semi-bridge inversion unit of connecting, form described valve body; The first half valve body of valve body described in a described semi-bridge inversion cell formation from first to M, output negative pole voltage; The latter half valve body of valve body described in M+1 to 2M described semi-bridge inversion cell formation, output cathode voltage;
Each described semi-bridge inversion unit includes two power switch pipes and a DC capacitor; After described two power switch pipes series connection, form inverter bridge leg, described inverter bridge leg is in parallel with described DC capacitor, and the mid point of described inverter bridge leg connects the DC capacitor negative electrode of a upper adjacent described semi-bridge inversion unit as ac output end, wherein, the ac output end that is positioned at the semi-bridge inversion unit of described valve body top layer connects electrical network by inductance; Described DC capacitor negative electrode connects the inverter bridge leg mid point of next adjacent described semi-bridge inversion unit; In each described semi-bridge inversion unit with described booster diode, the negative electrode of described booster diode connects respectively the anode of booster diode in the anode of DC capacitor of this semi-bridge inversion unit and a upper adjacent semi-bridge inversion unit, the negative electrode of booster diode in the next adjacent semi-bridge inversion of the anodic bonding unit of this booster diode;
Be positioned at 2M the common unit that described semi-bridge inversion cell formation three-phase valve body connects of the described valve body bottom;
Each described active energy back circuit adopts the one in following two kinds of structures:
Each described active energy back circuit includes an inverter, an isolating transformer and one group of rectifier bridge being made up of four diodes; The direct voltage of described valve body top layer semi-bridge inversion unit output changes alternating voltage into through described inverter, inputting described isolating transformer isolates, input described rectifier bridge through described isolating transformer secondary side, described rectifier bridge DC output end connects the common unit by described valve body bottom semi-bridge inversion cell formation;
Each described active energy back circuit forms by isolating transformer, capacitance and the rectifier bridge that is made up of four diodes; The elementary one end of described isolating transformer connects the inverter bridge leg mid point of described valve body top layer semi-bridge inversion unit, the elementary other end of described isolating transformer connects described capacitance one end, and the other end of described capacitance connects the DC bus negative pole of described valve body top layer semi-bridge inversion unit; Described isolating transformer secondary side connects the ac input end of described rectifier bridge, the direct-flow positive pole output of described rectifier bridge connects the positive pole of described valve body bottom semi-bridge inversion unit DC bus, and the output of the direct current negative pole of described rectifier bridge connects the negative pole of described valve body bottom semi-bridge inversion unit DC bus.
2. a kind of band booster diode modular multilevel converter as claimed in claim 1, is characterized in that: the DC capacitor general DC busbar of 2M semi-bridge inversion unit of described three-phase valve body.
3. a kind of band booster diode modular multilevel converter as claimed in claim 1, is characterized in that: each described power switch pipe all adopts insulated gate bipolar transistor, gate turn off thyristor or integral gate change transistor.
4. a kind of band booster diode modular multilevel converter as claimed in claim 2, is characterized in that: each described power switch pipe all adopts insulated gate bipolar transistor, gate turn off thyristor or integral gate change transistor.
5. one band booster diode modular multilevel converter as claimed in claim 1 or 2 or 3 or 4, is characterized in that: described isolating transformer no-load voltage ratio is 1:2.
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