CN105610340A - Equality constraint-based half-bridge/full-bridge series-parallel MMC self-equalizing topology employing distributed auxiliary capacitors - Google Patents

Equality constraint-based half-bridge/full-bridge series-parallel MMC self-equalizing topology employing distributed auxiliary capacitors Download PDF

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CN105610340A
CN105610340A CN201610047409.8A CN201610047409A CN105610340A CN 105610340 A CN105610340 A CN 105610340A CN 201610047409 A CN201610047409 A CN 201610047409A CN 105610340 A CN105610340 A CN 105610340A
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submodule
brachium pontis
mutually
module
sub
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赵成勇
许建中
刘航
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North China Electric Power University
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North China Electric Power University
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/483—Converters with outputs that each can have more than two voltages levels
    • H02M7/49—Combination of the output voltage waveforms of a plurality of converters
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/483—Converters with outputs that each can have more than two voltages levels
    • H02M7/4835—Converters with outputs that each can have more than two voltages levels comprising two or more cells, each including a switchable capacitor, the capacitors having a nominal charge voltage which corresponds to a given fraction of the input voltage, and the capacitors being selectively connected in series to determine the instantaneous output voltage
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/32—Means for protecting converters other than automatic disconnection
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/32—Means for protecting converters other than automatic disconnection
    • H02M1/325—Means for protecting converters other than automatic disconnection with means for allowing continuous operation despite a fault, i.e. fault tolerant converters

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Inverter Devices (AREA)

Abstract

The invention provides an equality constraint-based half-bridge/full-bridge series-parallel MMC self-equalizing topology employing distributed auxiliary capacitors. In the half-bridge/full-bridge series-parallel MMC self-equalizing topology, a half-bridge/full-bridge series-parallel MMC model and a self-equalizing auxiliary loop are subjected to electrical connection through auxiliary switches in the auxiliary loop; the auxiliary switches are turned off; and the half-bridge/full-bridge series-parallel MMC model and the auxiliary switches form the equality constraint-based half-bridge/full-bridge series-parallel MMC self-equalizing topology. The auxiliary switches are turned on; and the topology is equivalent to a half-bridge/full-bridge series-parallel MMC topology. 6K mechanical switches in the auxiliary switches can be omitted under the condition of not emphasizing the difference between two topologies. The half-bridge/full-bridge series-parallel MMC self-equalizing topology has direct-current fault clamping capacity, is independent on special equalizing control, can spontaneously generate balance of capacitor voltages of sub-modules on the basis of finishing DC/AC energy conversion, simultaneously can correspondingly reduce the trigger frequencies and the capacitor capacitances of the sub-modules, and achieves fundamental frequency modulation of an MMC.

Description

Distributed half-bridge/the full-bridge of auxiliary capacitor series-parallel connection MMC based on equality constraint is from all pressing topology
Technical field
The present invention relates to flexible transmission field, be specifically related to the distributed half-bridge/full-bridge of a kind of auxiliary capacitor based on equality constraint series-parallel connection MMC from all pressing topology.
Background technology
Modularization multi-level converter MMC is the developing direction of following HVDC Transmission Technology, MMC adopts submodule (Sub-module, SM) mode of cascade is constructed converter valve, avoid the direct series connection of a large amount of devices, reduce the conforming requirement of device, be convenient to dilatation and redundant configuration simultaneously. Along with the rising of level number, output waveform approaches sinusoidal, can effectively avoid the defect of low level VSC-HVDC.
Half-bridge/full-bridge series-parallel connection MMC is combined by half-bridge and full-bridge submodule, and half-bridge sub modular structure is simple, and cost is low, and running wastage is little, and full-bridge submodule has DC Line Fault clamping ability.
Different from two level, three level VSC, the DC voltage of MMC is not supported by a large electric capacity, but is supported by a series of separate suspension submodule capacitances in series. In order to ensure the waveform quality of AC Voltage-output and to ensure that in module, each power semiconductor bears identical stress, also in order better to support DC voltage, reduce alternate circulation, must ensure that submodule capacitance voltage is in the state of dynamic stability in the periodicity of brachium pontis power flows.
It is the main flow thinking that solves at present MMC neutron module capacitance electric voltage equalization problem that algorithm is all pressed in sequence based on capacitance voltage sequence, but is also constantly exposing its some inherent shortcomings. First, the realization of ranking function must rely on the Millisecond sampling of capacitance voltage, needs a large amount of sensor and optical-fibre channels to be coordinated; Secondly,, when group number of modules increases, the operand of capacitance voltage sequence increases rapidly, for the hardware design of controller is brought huge challenge; In addition, sequence all presses the realization of algorithm to have very high requirement to the frequency of cut-offfing of submodule, cut-offs frequency and all presses effect to be closely related, in practice process, may, because all press the restriction of effect, have to improve the trigger rate of submodule, and then bring the increase of transverter loss.
Document " ADC-LinkVoltageSelf-BalanceMethodforaDiode-ClampedModula rMultilevelConverterWithMinimumNumberofVoltageSensors ", has proposed a kind of thinking that relies on clamp diode and transformer to realize the equilibrium of MMC submodule capacitance voltage. But this scheme has to a certain degree been destroyed the modular nature of submodule in design, in submodule capacitive energy interchange channel is also confined to mutually, could not make full use of the existing structure of MMC, being introduced in of three transformers also can bring larger improvement cost when making control strategy complicated.
Summary of the invention
For the problems referred to above, the object of the invention is to propose a kind of economy, modular, do not rely on and all press algorithm, simultaneously can corresponding reduction submodule trigger rate and capacitor's capacity and the half-bridge/full-bridge series-parallel connection MMC with DC Line Fault clamping ability from all pressing topology.
The concrete constituted mode of the present invention is as follows.
Distributed half-bridge/the full-bridge of auxiliary capacitor series-parallel connection MMC based on equality constraint from all press topology, comprise the half-bridge MMC model being formed by A, B, C three-phase, A, B, the each brachium pontis of C three-phase respectively byKIndividual half-bridge submodule,N-KIndividual full-bridge submodule and 1 brachium pontis reactor are in series; Comprise by 6NIndividual auxiliary switch (6KIndividual mechanical switch, 6N-6KIndividual IGBT module), 6N+ 7 clamp diodes, 4 auxiliary capacitors, 4 auxiliary IGBT module compositions from all pressing subsidiary loop.
Distributed half-bridge/the full-bridge of the above-mentioned auxiliary capacitor based on equality constraint series-parallel connection MMC is from all pressing topology, A goes up the 1st submodule of brachium pontis mutually, the 2nd the sub-module I GBT module mid point that its submodule electric capacity negative pole is downwards gone up brachium pontis mutually with A is connected, and its submodule IGBT module mid point is upwards connected with dc bus positive pole; A goes up of brachium pontis mutuallyiIndividual submodule, whereiniValue be 2～K-1, its submodule electric capacity negative pole is downwards gone up the of brachium pontis mutually with Ai+ 1 sub-module I GBT module mid point is connected, and its submodule IGBT module mid point is upwards gone up of brachium pontis mutually with Ai-1 sub-module capacitance negative pole is connected; A goes up of brachium pontis mutuallyKIndividual half-bridge submodule, its submodule electric capacity negative pole is downwards gone up the of brachium pontis mutually with AKIGBT module mid point of+1 submodule is connected, and its submodule IGBT module mid point is upwards gone up of brachium pontis mutually with AK-1 sub-module capacitance negative pole is connected; A goes up of brachium pontis mutuallyjIndividual submodule, whereinjValue beK+2～N-1, IGBT module mid point of its submodule is downwards gone up brachium pontis the mutually with AjIGBT module mid point of+1 submodule is connected, and another IGBT module mid point is upwards gone up brachium pontis mutually with AjIGBT module mid point of-1 submodule is connected; A goes up brachium pontis mutuallyNIndividual submodule, IGBT module mid point of its submodule is downwards through two brachium pontis reactorsL 0Descend mutually the 1st sub-module I GBT module mid point of brachium pontis to be connected with A, another IGBT module mid point is upwards gone up of brachium pontis mutually with ANIGBT module mid point of-1 submodule is connected; A descends of brachium pontis mutuallyiIndividual submodule, whereiniValue be 2～K-1, its submodule electric capacity negative pole downwards descends brachium pontis the mutually with Ai+ 1 sub-module I GBT module mid point is connected, and its IGBT module mid point upwards descends brachium pontis mutually with Ai-1 sub-module capacitance negative pole is connected; A descends of brachium pontis mutuallyKIndividual submodule, its submodule electric capacity negative pole downwards descends brachium pontis the mutually with AKIGBT module mid point of+1 submodule is connected, and its submodule IGBT module mid point upwards descends brachium pontis mutually with AK-1 sub-module capacitance negative pole is connected; A descends brachium pontis mutuallyjIndividual submodule, whereinjValue beK+2～N-1, IGBT module mid point of its submodule downwards descends brachium pontis the mutually with AjIGBT module mid point of+1 submodule is connected, and another IGBT module mid point upwards descends brachium pontis mutually with AjIGBT module mid point of-1 submodule is connected; A descends brachium pontis mutuallyNIGBT module mid point of individual submodule is connected with dc bus negative pole downwards, and another IGBT module mid point upwards descends of brachium pontis mutually with ANIGBT module mid point of-1 submodule is connected. B goes up the 1st submodule of brachium pontis mutually, and its submodule capacitance cathode is upwards connected with dc bus positive pole, and the 2nd the sub-module capacitance positive pole that its submodule IGBT module mid point is downwards gone up brachium pontis mutually with B is connected; B goes up of brachium pontis mutuallyiIndividual submodule, whereiniValue be 2～K-1, its submodule capacitance cathode is upwards gone up of brachium pontis mutually with Bi-1 sub-module I GBT module mid point is connected, and its submodule IGBT module mid point is downwards gone up the of brachium pontis mutually with Bi+ 1 sub-module capacitance positive pole is connected; B goes up of brachium pontis mutuallyKIndividual submodule, its submodule capacitance cathode is upwards gone up of brachium pontis mutually with BK-1 sub-module I GBT module mid point is connected, and its submodule IGBT module mid point is downwards gone up brachium pontis the mutually with BKIGBT module mid point of+1 submodule is connected; B goes up of brachium pontis mutuallyjIndividual submodule, whereinjValue beK+2～N-1, IGBT module mid point of its submodule is upwards gone up brachium pontis mutually with BjIGBT module mid point of-1 submodule is connected, and another IGBT module mid point is downwards gone up brachium pontis the mutually with BjIGBT module mid point of+1 submodule is connected; B goes up brachium pontis mutuallyNIndividual submodule, IGBT module mid point of its submodule is upwards gone up brachium pontis mutually with BNIGBT module mid point of-1 submodule is connected, and another IGBT module mid point is downwards through two brachium pontis reactorsL 0Descend mutually the 1st sub-module capacitance positive pole of brachium pontis to be connected with B; B descends of brachium pontis mutuallyiIndividual submodule, whereiniValue be 2～K-1, its submodule capacitance cathode upwards descends of brachium pontis mutually with Bi-1 sub-module I GBT module mid point is connected, and its submodule IGBT module mid point downwards descends the of brachium pontis mutually with Bi+ 1 sub-module capacitance positive pole is connected; B descends of brachium pontis mutuallyKIndividual submodule, its submodule capacitance cathode upwards descends brachium pontis mutually with BK-1 sub-module I GBT module mid point is connected, and its submodule IGBT module mid point downwards descends brachium pontis the mutually with BKIGBT module mid point of+1 submodule is connected; B descends brachium pontis mutuallyjIndividual submodule, whereinjValue beK+2～N-1, IGBT module mid point of its submodule upwards descends brachium pontis mutually with BjIGBT module mid point of-1 submodule is connected, and another IGBT module mid point downwards descends brachium pontis the mutually with BjIGBT module mid point of+1 submodule is connected; B descends brachium pontis mutuallyNIndividual submodule, IGBT module mid point of its submodule upwards descends brachium pontis mutually with BNIGBT module mid point of-1 submodule is connected, and another IGBT module mid point is connected with dc bus negative pole downwards. The connected mode of C phase upper and lower bridge arm submodule is consistent with A phase or B.
From all pressing in subsidiary loop, anodal connection of first auxiliary capacitor assists IGBT module negative pole connection clamp diode to be incorporated to dc bus positive pole; Second auxiliary capacitor negative pole connects the anodal clamp diode that connects of auxiliary IGBT module and is incorporated to dc bus negative pole; The 3rd anodal connection of auxiliary capacitor assists IGBT module negative pole connection clamp diode to be incorporated to dc bus positive pole, and the 4th auxiliary capacitor negative pole connects the anodal connection of auxiliary IGBT module clamp diode and be incorporated to dc bus negative pole. Clamp diode, connects A by auxiliary switch and goes up mutually the 1st sub-module capacitance and first auxiliary capacitor positive pole in brachium pontis; Connect A by auxiliary switch and go up mutually in brachium pontisiIndividual sub-module capacitance andi+ 1 sub-module capacitance positive pole, whereiniValue be 1～N-1; Connect A by auxiliary switch and go up mutually in brachium pontisNIndividual sub-module capacitance is descended the 1st sub-module capacitance positive pole of brachium pontis mutually with A; Connect A by auxiliary switch and descend mutually in brachium pontisiIndividual sub-module capacitance is descended brachium pontis mutually with Ai+ 1 sub-module capacitance positive pole, whereiniValue be 1～N-1; Connect A by auxiliary switch and descend mutually in brachium pontisNIndividual sub-module capacitance and second auxiliary capacitor positive pole. Clamp diode, is connected B and is gone up mutually the negative pole of the 1st sub-module capacitance and first auxiliary capacitor in brachium pontis by auxiliary switch; Connect B by auxiliary switch and go up mutually in brachium pontisiIndividual sub-module capacitance andiThe negative pole of+1 sub-module capacitance, whereiniValue be 1～N-1; Connect B by auxiliary switch and go up mutually in brachium pontisNIndividual sub-module capacitance and B descend the negative pole of the 1st sub-module capacitance of brachium pontis mutually; Connect B by auxiliary switch and descend mutually in brachium pontisiIndividual sub-module capacitance is descended brachium pontis mutually with BiThe negative pole of+1 sub-module capacitance, whereiniValue be 1～N-1; Connect B by auxiliary switch and descend mutually in brachium pontisNThe negative pole of individual sub-module capacitance and second auxiliary capacitor. When the annexation of C phase submodule is consistent with A, the connected mode of C phase upper and lower bridge arm neutron intermodule clamp diode is consistent with A, the 3rd auxiliary capacitor positive pole gone up first submodule capacitance cathode of brachium pontis mutually through mechanical switch, clamp diode connection C simultaneously, the 3rd auxiliary capacitor negative pole connects B through mechanical switch, clamp diode and go up mutually first submodule electric capacity negative pole of brachium pontis, and the 4th auxiliary capacitor positive pole descends brachium pontis the mutually through mechanical switch, clamp diode connection CNIndividual sub-module capacitance positive pole, the 4th auxiliary capacitor negative pole connects B through mechanical switch, clamp diode and descends mutually brachium pontis theNIndividual sub-module capacitance negative pole; When the annexation of C phase submodule is consistent with B, the connected mode of C phase upper and lower bridge arm neutron intermodule clamp diode is consistent with B, the 3rd auxiliary capacitor negative pole gone up first submodule electric capacity negative pole of brachium pontis mutually through mechanical switch, clamp diode connection C simultaneously, the 3rd auxiliary capacitor positive pole connects A through mechanical switch, clamp diode and go up mutually first submodule capacitance cathode of brachium pontis, and the 4th auxiliary capacitor negative pole descends brachium pontis the mutually through mechanical switch, clamp diode connection CNIndividual sub-module capacitance negative pole, the 4th auxiliary capacitor positive pole connects A through mechanical switch, clamp diode and descends mutually brachium pontis theNIndividual sub-module capacitance positive pole.
Brief description of the drawings
Below in conjunction with accompanying drawing, the present invention is further described.
Fig. 1 is the structural representation of half-bridge submodule;
Fig. 2 is the structural representation of full-bridge submodule;
Fig. 3 is that the distributed half-bridge/full-bridge of the auxiliary capacitor based on equality constraint series-parallel connection MMC is from all pressing topology.
Detailed description of the invention
For further setting forth performance of the present invention and operation principle, below in conjunction with accompanying drawing, constituted mode and the operation principle of invention are specifically described. But the half-bridge/full-bridge series-parallel connection MMC based on this principle is from all pressing topology to be not limited to Fig. 3.
With reference to figure 3, the distributed half-bridge/full-bridge of the auxiliary capacitor series-parallel connection MMC based on equality constraint from all press topology, comprise the half-bridge/full-bridge series-parallel connection MMC model being formed by A, B, C three-phase, A, B, the each brachium pontis of C three-phase respectively byKIndividual half-bridge submodule,N-KIndividual full-bridge submodule and 1 brachium pontis reactor are in series; Comprise 6NIndividual auxiliary switch (6KIndividual mechanical switch, 6N-6KIndividual IGBT module) and 6N+7 clamp diode, 4 auxiliary capacitors, 2 auxiliary IGBT module compositions from all pressing subsidiary loop.
In half-bridge/full-bridge series-parallel connection MMC model, A goes up the 1st submodule of brachium pontis, its submodule electric capacity mutuallyC-au-_1The 2nd the sub-module I GBT module mid point that negative pole is downwards gone up brachium pontis mutually with A is connected, and its submodule IGBT module mid point is upwards connected with dc bus positive pole; A goes up of brachium pontis mutuallyiIndividual submodule, whereiniValue be 2～K-1, its submodule electric capacityC-au-_i Negative pole is downwards gone up the of brachium pontis mutually with Ai+ 1 sub-module I GBT module mid point is connected, and its submodule IGBT module mid point is upwards gone up of brachium pontis mutually with Ai-1 sub-module capacitanceC -au-_i-1Negative pole is connected; A goes up of brachium pontis mutuallyKIndividual half-bridge submodule, its submodule electric capacityC -au-_K Negative pole is downwards gone up the of brachium pontis mutually with AKIGBT module mid point of+1 submodule is connected, and its submodule IGBT module mid point is upwards gone up of brachium pontis mutually with AK-1 sub-module capacitanceC-au-_K-1Negative pole is connected; A goes up of brachium pontis mutuallyjIndividual submodule, whereinjValue beK+2～N-1, IGBT module mid point of its submodule is downwards gone up brachium pontis the mutually with AjIGBT module mid point of+1 submodule is connected, and another IGBT module mid point is upwards gone up brachium pontis mutually with AjIGBT module mid point of-1 submodule is connected; A goes up brachium pontis mutuallyNIndividual submodule, IGBT module mid point of its submodule is downwards through two brachium pontis reactorsL 0Descend mutually the 1st sub-module I GBT module mid point of brachium pontis to be connected with A, another IGBT module mid point is upwards gone up of brachium pontis mutually with ANIGBT module mid point of-1 submodule is connected; A descends of brachium pontis mutuallyiIndividual submodule, whereiniValue be 2～K-1, its submodule electric capacityC-al-_i Negative pole downwards descends brachium pontis the mutually with Ai+ 1 sub-module I GBT module mid point is connected, and its IGBT module mid point upwards descends brachium pontis mutually with Ai-1 sub-module capacitanceC- al-_i-1Negative pole is connected; A descends of brachium pontis mutuallyKIndividual submodule, its submodule electric capacityC -al_K Negative pole downwards descends brachium pontis the mutually with AKIGBT module mid point of+1 submodule is connected, and its submodule IGBT module mid point upwards descends brachium pontis mutually with AK-1 sub-module capacitanceC-al-_K-1Negative pole is connected; A descends brachium pontis mutuallyjIndividual submodule, whereinjValue beK+2～N-1, IGBT module mid point of its submodule downwards descends brachium pontis the mutually with AjIGBT module mid point of+1 submodule is connected, and another IGBT module mid point upwards descends brachium pontis mutually with AjIGBT module mid point of-1 submodule is connected; A descends brachium pontis mutuallyNIGBT module mid point of individual submodule is connected with dc bus negative pole downwards, and another IGBT module mid point upwards descends of brachium pontis mutually with ANIGBT module mid point of-1 submodule is connected. B goes up the 1st submodule of brachium pontis, its submodule electric capacity mutuallyC -bu-_1Positive pole is upwards connected with dc bus positive pole, and its submodule IGBT module mid point is gone up the 2nd sub-module capacitance of brachium pontis downwards mutually with BC -bu-_2Positive pole is connected; B goes up of brachium pontis mutuallyiIndividual submodule, whereiniValue be 2～K-1, its submodule electric capacityC-bu-_i Anodal upwards go up mutually the of brachium pontis with Bi-1 sub-module I GBT module mid point is connected, and its submodule IGBT module mid point is downwards gone up the of brachium pontis mutually with Bi+ 1 sub-module capacitanceC-bu-_i+1Positive pole is connected; B goes up of brachium pontis mutuallyKIndividual submodule, its submodule electric capacityC-bu-_K Anodal upwards go up mutually the of brachium pontis with BK-1 sub-module I GBT module mid point is connected, and its submodule IGBT module mid point is downwards gone up brachium pontis the mutually with BKIGBT module mid point of+1 submodule is connected; B goes up of brachium pontis mutuallyjIndividual submodule, whereinjValue beK+2～N-1, IGBT module mid point of its submodule is upwards gone up brachium pontis mutually with BjIGBT module mid point of-1 submodule is connected, and another IGBT module mid point is downwards gone up brachium pontis the mutually with BjIGBT module mid point of+1 submodule is connected; B goes up brachium pontis mutuallyNIndividual submodule, an one IGBT module mid point is upwards gone up brachium pontis mutually with BNIGBT module mid point of-1 submodule is connected, and another IGBT module mid point is downwards through two brachium pontis reactorsL 0Descend mutually the 1st sub-module capacitance of brachium pontis with BC -bl-_1Positive pole is connected; B descends of brachium pontis mutuallyiIndividual submodule, whereiniValue be 2～K-1, its submodule electric capacityC -bl_i Anodal upwards descend mutually the of brachium pontis with Bi-1 sub-module I GBT module mid point is connected, and its submodule IGBT module mid point downwards descends the of brachium pontis mutually with Bi+ 1 sub-module capacitanceC- bl-_i+1Positive pole is connected; B descends of brachium pontis mutuallyKIndividual submodule, its submodule electric capacityC -bl_K Positive pole upwards descends brachium pontis mutually with BK-1 sub-module I GBT module mid point is connected, and its submodule IGBT module mid point downwards descends brachium pontis the mutually with BKIGBT module mid point of+1 submodule is connected; B descends brachium pontis mutuallyjIndividual submodule, whereinjValue beK+2～N-1, an one IGBT module mid point upwards descends brachium pontis mutually with BjIGBT module mid point of-1 submodule is connected, and another IGBT module mid point downwards descends brachium pontis the mutually with BjIGBT module mid point of+1 sub-module I GBT is connected; B descends brachium pontis mutuallyNIndividual submodule, IGBT module mid point of its submodule upwards descends brachium pontis mutually with BNIGBT module mid point of-1 submodule is connected, and another IGBT module mid point is connected with dc bus negative pole downwards. The connected mode of C phase upper and lower bridge arm submodule is consistent with A.
From all pressing in subsidiary loop, auxiliary capacitorC 1Anodal connection assisted IGBT moduleT 1, negative pole connects clamp diode and is incorporated to dc bus positive pole; Auxiliary capacitorC 2Negative pole connects auxiliary IGBT moduleT 2, the anodal clamp diode that connects is incorporated to dc bus negative pole; Auxiliary capacitorC 3Anodal connection assisted IGBT moduleT 3, negative pole connects clamp diode and is incorporated to dc bus positive pole; Auxiliary capacitorC 4Negative pole connects auxiliary IGBT moduleT 4, the anodal clamp diode that connects is incorporated to dc bus negative pole. Clamp diode, passes through auxiliary switchK au_12Connect A and go up mutually the 1st sub-module capacitance in brachium pontisC -au-_1With auxiliary capacitorC 1Anodal; Pass through auxiliary switchK au_i2、K au_（i+1）2Connect A and go up mutually in brachium pontis theiIndividual sub-module capacitanceC -au-_i Withi+ 1 sub-module capacitanceC -au-_i+1Positive pole, whereiniValue be 1～K-1; Pass through auxiliary switchK au_K2、T au_K+1Connect A and go up mutually in brachium pontis theKIndividual sub-module capacitanceC -au-_K WithK+ 1 sub-module capacitanceC- au_K+1Anodal; Pass through auxiliary switchT au_j 、T au_j+1Connect A and go up mutually in brachium pontis thejIndividual sub-module capacitanceC -au-_j Withj+ 1 sub-module capacitanceC -au-_j+1Positive pole, whereinjValue beK+1～N-1; Pass through auxiliary switchT au_N 、K al_12Connect A and go up mutually in brachium pontis theNIndividual sub-module capacitanceC-au_N Descend mutually the 1st sub-module capacitance of brachium pontis with AC -al-_1Anodal; Pass through auxiliary switchK al_i2、K al_（i+1）2Connect A and descend mutually in brachium pontis theiIndividual sub-module capacitanceC -al-_i Withi+ 1 sub-module capacitanceC -al-_i+1Positive pole, whereiniValue be 1～K-1; Pass through auxiliary switchK al_K2、T al_K+1Connect A and descend mutually in brachium pontis theKIndividual sub-module capacitanceC-al-_K WithK+ 1 sub-module capacitanceC-al-_K+1Anodal; Pass through auxiliary switchT al_j 、T al_j+1Connect A and descend mutually in brachium pontis thejIndividual sub-module capacitanceC -al_j Withj+ 1 sub-module capacitanceC -al-_j+1Positive pole, whereinjValue beK+1～N-1; Pass through auxiliary switchT al_N Connect A and descend mutually in brachium pontis theNIndividual sub-module capacitanceC -al_N With auxiliary capacitorC 2Anodal. Clamp diode, passes through auxiliary switchK bu_12Connect B and go up mutually the 1st sub-module capacitance in brachium pontisC -bu-_1With auxiliary capacitorC 1, auxiliary capacitorC 3Negative pole; Pass through auxiliary switchK bu_i2、K bu_（i+1）2Connect B and go up mutually in brachium pontis theiIndividual sub-module capacitanceC-bu-_i Withi+ 1 sub-module capacitanceC-bu-_i+1Negative pole, whereiniValue be 1～K-1; Pass through auxiliary switchK bu_K2、T bu_K+1Connect B and go up mutually in brachium pontis theKIndividual sub-module capacitanceC-bu-_K WithK+ 1 sub-module capacitanceC-bu-_K+1Negative pole; Pass through auxiliary switchT bu_j 、T bu_j+1Connect B and go up mutually in brachium pontis thejIndividual sub-module capacitanceC-bu-_j Withj+ 1 sub-module capacitanceC-bu-_j+1Negative pole, whereinjValue beK+1～N-1; Pass through auxiliary switchT bu_N 、K bl_12Connect B and go up mutually in brachium pontis theNIndividual sub-module capacitanceC-bu-_N Descend mutually the 1st sub-module capacitance in brachium pontis with BC-bl_1Negative pole; Pass through auxiliary switchK bl_i2、K bl_（i+1）2Connect B and descend mutually in brachium pontis theiIndividual sub-module capacitanceC-bl-_i Withi+ 1 sub-module capacitanceC-bl-_i+1Negative pole, whereiniValue be 1～K-1; Pass through auxiliary switchK bl_K2、T bl_K+1Connect B and descend mutually in brachium pontis theKIndividual sub-module capacitanceC-bl_K WithK+ 1 sub-module capacitanceC-bl-_K+1Negative pole; Pass through auxiliary switchT bl_j 、T bl_j+1Connect B and descend mutually in brachium pontis thejIndividual sub-module capacitanceC-bl-_j Withj+ 1 sub-module capacitanceC-bl_j+1Negative pole, whereinjValue beK+1～N-1; Pass through auxiliary switchT bl_N Connect B and descend mutually in brachium pontis theNIndividual sub-module capacitanceC -bl-_N With auxiliary capacitorC 2, auxiliary capacitorC 4Negative pole. Between C phase upper and lower bridge arm submodule, the annexation of clamp diode is consistent with A; C goes up first submodule electric capacity of brachium pontis mutuallyC cu---_1Anodal through auxiliary switchK cu_12And clamp diode is connected to auxiliary capacitorC 3Anodal; C descends brachium pontis mutuallyNIndividual sub-module capacitanceC c--l_N Anodal through auxiliary switchT cl_N And clamp diode is connected to auxiliary capacitorC 4Anodal.
Under normal circumstances, from all pressing in subsidiary loop 6NIndividual auxiliary switchK au_i2、K al_i2、K bu_i2、K bl_i2、K cu_i2、K cl_i2、T au_j 、T al_j 、T bu_j 、T bl_j 、T cu_j 、T cl_j Normally closed, whereiniValue be 1～K，jValue beK+1～N, A goes up first submodule electric capacity of brachium pontis mutuallyC-au-_1When bypass, now auxiliary IGBT moduleT 1Disconnect submodule electric capacityC -au-_1With auxiliary capacitorC 1By clamp diode parallel connection; A goes up brachium pontis mutuallyiIndividual sub-module capacitanceC-au-_i When bypass, whereiniValue be 2～N, submodule electric capacityC-au-_i With submodule electric capacityC-au-_i-1By clamp diode parallel connection; A descends first submodule electric capacity of brachium pontis mutuallyC-al_1When bypass, submodule electric capacityC-al-_1By clamp diode, two brachium pontis reactorsL 0With submodule electric capacityC- au-_N In parallel; A descends brachium pontis mutuallyiIndividual sub-module capacitanceC-al_i When bypass, whereiniValue be 2～N, submodule electric capacityC- al-_i With submodule electric capacityC-al_i-1By clamp diode parallel connection; Auxiliary IGBT moduleT 2When closed, auxiliary capacitorC 2By clamp diode and submodule electric capacityC-al_N In parallel.
Under normal circumstances, from all pressing in subsidiary loop 6NIndividual auxiliary switchK au_i2、K al_i2、K bu_i2、K bl_i2、K cu_i2、K cl_i2、T au_j 、T al_j 、T bu_j 、T bl_j 、T cu_j 、T cl_j Normally closed, whereiniValue be 1～K，jValue beK+1～N, auxiliary IGBT moduleT 1When closed, auxiliary capacitorC 1With submodule electric capacityC-bu-_1By clamp diode parallel connection; B goes up brachium pontis mutuallyiIndividual sub-module capacitanceC-bu-_i When bypass, whereiniValue be 1～N-1, submodule electric capacityC-bu-_i With submodule electric capacityC- bu-_i+1By clamp diode parallel connection; B goes up brachium pontis mutuallyNIndividual sub-module capacitanceC-bu_N When bypass, submodule electric capacityC -bu-_N By clamp diode, two brachium pontis reactorsL 0With submodule electric capacityC- bl-_1In parallel; B descends brachium pontis mutuallyiIndividual sub-module capacitanceC-bl_i When bypass, whereiniValue be 1～N-1, submodule electric capacityC -bl-_i With submodule electric capacityC- bl_i+1By clamp diode parallel connection; B descends brachium pontis mutuallyNIndividual sub-module capacitanceC-bl_N When bypass, submodule electric capacityC-bl-_N With auxiliary capacitorC- 2By clamp diode parallel connection. Above-mentioned auxiliary IGBT moduleT 1Triggering signal consistent with the triggering signal that A goes up first submodule of brachium pontis mutually; Auxiliary IGBT moduleT 2Triggering signal descend mutually brachium pontis with BNThe triggering signal of individual submodule is consistent.
In the process of orthogonal stream energy conversion, each submodule alternately drops into, bypass, auxiliary IGBT moduleT 1、T 2Be alternately closed, turn-off, between A, B phase upper and lower bridge arm, capacitance voltage, under the effect of clamp diode, meets lower column constraint:
Hence one can see that, completes in the dynamic process of orthogonal stream energy conversion at half-bridge/full-bridge series-parallel connection MMC, meets constraints below:
In like manner between C, B phase upper and lower bridge arm, the constraints of capacitance voltage is:
Illustrated from above-mentioned, this half-bridge/full-bridge series-parallel connection MMC topology possesses submodule capacitance voltage from the ability of equalization.
Finally should be noted that: described embodiment is only some embodiments of the present application, instead of whole embodiment. Based on the embodiment in the application, those of ordinary skill in the art are not making the every other embodiment obtaining under creative work prerequisite, all belong to the scope of the application's protection.

Claims (6)

  1. Distributed half-bridge/the full-bridge of auxiliary capacitor based on equality constraint series-parallel connection MMC from all press topology, it is characterized in that: comprise the half-bridge/full-bridge series-parallel connection MMC model being formed by A, B, C three-phase, A, B, the each brachium pontis of C three-phase respectively byKIndividual half-bridge submodule,N-KIndividual full-bridge submodule and 1 brachium pontis reactor are in series; Comprise 6NIndividual auxiliary switch (6KIndividual mechanical switch, 6N-6KIndividual IGBT module), a 6N+7 clamp diode, 4 auxiliary capacitorsC 1、C 2、C 3、C 4And 4 auxiliary IGBT modulesT 1、T 2、T 3、T 4Form from all pressing subsidiary loop.
  2. 2. topological from all pressing according to the distributed half-bridge/full-bridge of the auxiliary capacitor based on the equality constraint series-parallel connection MMC described in right 1, it is characterized in that: A goes up the 1st submodule of brachium pontis, its submodule electric capacity mutuallyC-au-_1The 2nd the sub-module I GBT module mid point that negative pole is downwards gone up brachium pontis mutually with A is connected, and its submodule IGBT module mid point is upwards connected with dc bus positive pole; A goes up of brachium pontis mutuallyiIndividual submodule, whereiniValue be 2～K-1, its submodule electric capacityC-au-_i Negative pole is downwards gone up the of brachium pontis mutually with Ai+ 1 sub-module I GBT module mid point is connected, and its submodule IGBT module mid point is upwards gone up of brachium pontis mutually with Ai-1 sub-module capacitanceC -au-_i-1Negative pole is connected; A goes up of brachium pontis mutuallyKIndividual half-bridge submodule, its submodule electric capacityC -au-_K Negative pole is downwards gone up the of brachium pontis mutually with AKIGBT module mid point of+1 submodule is connected, and its submodule IGBT module mid point is upwards gone up of brachium pontis mutually with AK-1 sub-module capacitanceC-au-_K-1Negative pole is connected; A goes up of brachium pontis mutuallyjIndividual submodule, whereinjValue beK+2～N-1, IGBT module mid point of its submodule is downwards gone up brachium pontis the mutually with AjIGBT module mid point of+1 submodule is connected, and another IGBT module mid point is upwards gone up brachium pontis mutually with AjIGBT module mid point of-1 submodule is connected; A goes up brachium pontis mutuallyNIndividual submodule, IGBT module mid point of its submodule is downwards through two brachium pontis reactorsL 0Descend mutually the 1st sub-module I GBT module mid point of brachium pontis to be connected with A, another IGBT module mid point is upwards gone up of brachium pontis mutually with ANIGBT module mid point of-1 submodule is connected; A descends of brachium pontis mutuallyiIndividual submodule, whereiniValue be 2～K-1, its submodule electric capacityC-al-_i Negative pole downwards descends brachium pontis the mutually with Ai+ 1 sub-module I GBT module mid point is connected, and its IGBT module mid point upwards descends brachium pontis mutually with Ai-1 sub-module capacitanceC- al-_i-1Negative pole is connected; A descends of brachium pontis mutuallyKIndividual submodule, its submodule electric capacityC -al_K Negative pole downwards descends brachium pontis the mutually with AKIGBT module mid point of+1 submodule is connected, and its submodule IGBT module mid point upwards descends brachium pontis mutually with AK-1 sub-module capacitanceC-al-_K-1Negative pole is connected; A descends brachium pontis mutuallyjIndividual submodule, whereinjValue beK+2～N-1, IGBT module mid point of its submodule downwards descends brachium pontis the mutually with AjIGBT module mid point of+1 submodule is connected, and another IGBT module mid point upwards descends brachium pontis mutually with AjIGBT module mid point of-1 submodule is connected; A descends brachium pontis mutuallyNIGBT module mid point of individual submodule is connected with dc bus negative pole downwards, and another IGBT module mid point upwards descends of brachium pontis mutually with ANIGBT module mid point of-1 submodule is connected; B goes up the 1st submodule of brachium pontis, its submodule electric capacity mutuallyC -bu-_1Positive pole is upwards connected with dc bus positive pole, and its submodule IGBT module mid point is gone up the 2nd sub-module capacitance of brachium pontis downwards mutually with BC -bu-_2Positive pole is connected; B goes up of brachium pontis mutuallyiIndividual submodule, whereiniValue be 2～K-1, its submodule electric capacityC-bu-_i Anodal upwards go up mutually the of brachium pontis with Bi-1 sub-module I GBT module mid point is connected, and its submodule IGBT module mid point is downwards gone up the of brachium pontis mutually with Bi+ 1 sub-module capacitanceC-bu-_i+1Positive pole is connected; B goes up of brachium pontis mutuallyKIndividual submodule, its submodule electric capacityC-bu-_K Anodal upwards go up mutually the of brachium pontis with BK-1 sub-module I GBT module mid point is connected, and its submodule IGBT module mid point is downwards gone up brachium pontis the mutually with BKIGBT module mid point of+1 submodule is connected; B goes up of brachium pontis mutuallyjIndividual submodule, whereinjValue beK+2～N-1, IGBT module mid point of its submodule is upwards gone up brachium pontis mutually with BjIGBT module mid point of-1 submodule is connected, and another IGBT module mid point is downwards gone up brachium pontis the mutually with BjIGBT module mid point of+1 submodule is connected; B goes up brachium pontis mutuallyNIndividual submodule, an one IGBT module mid point is upwards gone up brachium pontis mutually with BNIGBT module mid point of-1 submodule is connected, and another IGBT module mid point is downwards through two brachium pontis reactorsL 0Descend mutually the 1st sub-module capacitance of brachium pontis with BC -bl-_1Positive pole is connected; B descends of brachium pontis mutuallyiIndividual submodule, whereiniValue be 2～K-1, its submodule electric capacityC -bl_i Anodal upwards descend mutually the of brachium pontis with Bi-1 sub-module I GBT module mid point is connected, and its submodule IGBT module mid point downwards descends the of brachium pontis mutually with Bi+ 1 sub-module capacitanceC- bl-_i+1Positive pole is connected; B descends of brachium pontis mutuallyKIndividual submodule, its submodule electric capacityC -bl_K Positive pole upwards descends brachium pontis mutually with BK-1 sub-module I GBT module mid point is connected, and its submodule IGBT module mid point downwards descends brachium pontis the mutually with BKIGBT module mid point of+1 submodule is connected; B descends brachium pontis mutuallyjIndividual submodule, whereinjValue beK+2～N-1, an one IGBT module mid point upwards descends brachium pontis mutually with BjIGBT module mid point of-1 submodule is connected, and another IGBT module mid point downwards descends brachium pontis the mutually with BjIGBT module mid point of+1 sub-module I GBT is connected; B descends brachium pontis mutuallyNIndividual submodule, IGBT module mid point of its submodule upwards descends brachium pontis mutually with BNIGBT module mid point of-1 submodule is connected, and another IGBT module mid point is connected with dc bus negative pole downwards; The connected mode of C phase upper and lower bridge arm submodule can be consistent with A, also can be consistent with B; Due to the existence of full-bridge submodule, unnecessary configuration IGCT between the upper and lower output line of half-bridge submodule; Therefore A, B, C phase upper and lower bridge arm submodule between output line, be parallel with up and down mechanical switchK au_i1、K al_i1、K bu_i1、K bl_i1、K cu_i1、K cl_i1、K au_j 、K al_j 、K bu_j 、K bl_j 、K cu_j 、K cl_j , whereiniValue be 1～K，jValue beK+1～N; A, B, C three-phase status that above-mentioned annexation forms are consistent, and other topologys after three-phase rotation symmetry are in interest field.
  3. 3. topological from all pressing according to the distributed half-bridge/full-bridge of the auxiliary capacitor based on the equality constraint series-parallel connection MMC described in right 1, it is characterized in that: from all pressing in subsidiary loop, auxiliary capacitorC 1Anodal connection assisted IGBT moduleT 1, negative pole connects clamp diode and is incorporated to dc bus positive pole; Auxiliary capacitorC 2Negative pole connects auxiliary IGBT moduleT 2, the anodal clamp diode that connects is incorporated to dc bus negative pole; Auxiliary capacitorC 3Anodal connection assisted IGBT moduleT 3, negative pole connects clamp diode and is incorporated to dc bus positive pole; Auxiliary capacitorC 4Negative pole connects auxiliary IGBT moduleT 4, the anodal clamp diode that connects is incorporated to dc bus negative pole; Clamp diode, passes through auxiliary switchK au_12Connect A and go up mutually the 1st sub-module capacitance in brachium pontisC -au-_1With auxiliary capacitorC 1Anodal; Pass through auxiliary switchK au_i2、K au_（i+1）2Connect A and go up mutually in brachium pontis theiIndividual sub-module capacitanceC -au-_i Withi+ 1 sub-module capacitanceC -au-_i+1Positive pole, whereiniValue be 1～K-1; Pass through auxiliary switchK au_K2、T au_K+1Connect A and go up mutually in brachium pontis theKIndividual sub-module capacitanceC -au-_K WithK+ 1 sub-module capacitanceC- au_K+1Anodal; Pass through auxiliary switchT au_j 、T au_j+1Connect A and go up mutually in brachium pontis thejIndividual sub-module capacitanceC -au-_j Withj+ 1 sub-module capacitanceC -au-_j+1Positive pole, whereinjValue beK+1～N-1; Pass through auxiliary switchT au_N 、K al_12Connect A and go up mutually in brachium pontis theNIndividual sub-module capacitanceC-au_N Descend mutually the 1st sub-module capacitance of brachium pontis with AC -al-_1Anodal; Pass through auxiliary switchK al_i2、K al_（i+1）2Connect A and descend mutually in brachium pontis theiIndividual sub-module capacitanceC -al-_i Withi+ 1 sub-module capacitanceC -al-_i+1Positive pole, whereiniValue be 1～K-1; Pass through auxiliary switchK al_K2、T al_K+1Connect A and descend mutually in brachium pontis theKIndividual sub-module capacitanceC-al-_K WithK+ 1 sub-module capacitanceC-al-_K+1Anodal; Pass through auxiliary switchT al_j 、T al_j+1Connect A and descend mutually in brachium pontis thejIndividual sub-module capacitanceC -al_j Withj+ 1 sub-module capacitanceC -al-_j+1Positive pole, whereinjValue beK+1～N-1; Pass through auxiliary switchT al_N Connect A and descend mutually in brachium pontis theNIndividual sub-module capacitanceC -al_N With auxiliary capacitorC 2Anodal; Clamp diode, passes through auxiliary switchK bu_12Connect B and go up mutually the 1st sub-module capacitance in brachium pontisC -bu-_1With auxiliary capacitorC 1Negative pole; Pass through auxiliary switchK bu_i2、K bu_（i+1）2Connect B and go up mutually in brachium pontis theiIndividual sub-module capacitanceC-bu-_i Withi+ 1 sub-module capacitanceC-bu-_i+1Negative pole, whereiniValue be 1～K-1; Pass through auxiliary switchK bu_K2、T bu_K+1Connect B and go up mutually in brachium pontis theKIndividual sub-module capacitanceC-bu-_K WithK+ 1 sub-module capacitanceC-bu-_K+1Negative pole; Pass through auxiliary switchT bu_j 、T bu_j+1Connect B and go up mutually in brachium pontis thejIndividual sub-module capacitanceC-bu-_j Withj+ 1 sub-module capacitanceC-bu-_j+1Negative pole, whereinjValue beK+1～N-1; Pass through auxiliary switchT bu_N 、K bl_12Connect B and go up mutually in brachium pontis theNIndividual sub-module capacitanceC-bu-_N Descend mutually the 1st sub-module capacitance in brachium pontis with BC-bl_1Negative pole; Pass through auxiliary switchK bl_i2、K bl_（i+1）2Connect B and descend mutually in brachium pontis theiIndividual sub-module capacitanceC-bl-_i Withi+ 1 sub-module capacitanceC-bl-_i+1Negative pole, whereiniValue be 1～K-1; Pass through auxiliary switchK bl_K2、T bl_K+1Connect B and descend mutually in brachium pontis theKIndividual sub-module capacitanceC-bl_K WithK+ 1 sub-module capacitanceC-bl-_K+1Negative pole; Pass through auxiliary switchT bl_j 、T bl_j+1Connect B and descend mutually in brachium pontis thejIndividual sub-module capacitanceC-bl-_j Withj+ 1 sub-module capacitanceC-bl_j+1Negative pole, whereinjValue beK+1～N-1; Pass through auxiliary switchT bl_N Connect B and descend mutually in brachium pontis theNIndividual sub-module capacitanceC -bl-_N With auxiliary capacitorC 2Negative pole; When the annexation of C phase submodule is consistent with A, the connected mode of C phase upper and lower bridge arm neutron intermodule clamp diode is consistent with A, simultaneously auxiliary capacitorC 3Anodal through auxiliary switchK cu_12, clamp diode connect C go up mutually first submodule electric capacity of brachium pontisC cu_1Positive pole, auxiliary capacitorC 3Negative pole is through auxiliary switchK bu_12, clamp diode connect B go up mutually first submodule electric capacity of brachium pontisC bu_1Negative pole, auxiliary capacitorC 4Positive pole through auxiliary switchT cl_N , clamp diode connects C and descends mutually brachium pontis theNIndividual sub-module capacitanceC cl_N Positive pole, auxiliary capacitorC 4Negative pole is through auxiliary switchT bl_N , clamp diode connects B and descends mutually brachium pontis theNIndividual sub-module capacitanceC bl_N Negative pole; When the annexation of C phase submodule is consistent with B, the connected mode of C phase upper and lower bridge arm neutron intermodule clamp diode is consistent with B, simultaneously auxiliary capacitorC 3Negative pole is through auxiliary switchK cu_12, clamp diode connect C go up mutually first submodule electric capacity of brachium pontisC cu_1Negative pole, auxiliary capacitorC 3Anodal through auxiliary switchK au_12, clamp diode connect A go up mutually first submodule electric capacity of brachium pontisC au_1Positive pole, auxiliary capacitorC 4Negative pole is through auxiliary switchT cl_N , clamp diode connects C and descends mutually brachium pontis theNIndividual sub-module capacitanceC cl_N Negative pole, auxiliary capacitorC 4Anodal through auxiliary switchT al_N , clamp diode connects A and descends mutually brachium pontis theNIndividual sub-module capacitanceC al_N Positive pole; In above-mentioned A, B, C three-phase 6NIndividual auxiliary switchK au_i2、K al_i2、K bu_i2、K bl_i2、K cu_i2、K cl_i2、T au_j 、T al_j 、T bu_j 、T bl_j 、T cu_j 、T cl_j , whereiniValue be 1～K，jValue beK+1～N，6N+ 7 clamp diodes, 4 auxiliary capacitorsC 1、C 2、 C 3、C 4, and 4 auxiliary IGBT modulesT 1、T 2、T 3、T 4, common formation is from all pressing subsidiary loop.
  4. According to the distributed half-bridge/full-bridge of the auxiliary capacitor based on the equality constraint series-parallel connection MMC described in right 1 from all pressing topology, it is characterized in that: when normal condition, from all pressing in subsidiary loop 6NIndividual auxiliary switchK au_i2、K al_i2、K bu_i2、K bl_i2、K cu_i2、K cl_i2、T au_j 、T al_j 、T bu_j 、T bl_j 、T cu_j 、T cl_j Normally closed, whereiniValue be 1～K，jValue beK+1～N; When failure condition, 6N-6KIndividual auxiliary switchT au_j 、T al_j 、T bu_j 、T bl_j 、T cu_j 、T cl_j Disconnect, whereinjValue beK+1～N; Under normal circumstances, A goes up first submodule electric capacity of brachium pontis mutuallyC-au-_1When bypass, now auxiliary IGBT moduleT 1Disconnect submodule electric capacityC -au-_1With auxiliary capacitorC 1By clamp diode parallel connection; A goes up brachium pontis mutuallyiIndividual sub-module capacitanceC-au-_i When bypass, whereiniValue be 2～N, submodule electric capacityC-au-_i With submodule electric capacityC-au-_i-1By clamp diode parallel connection; A descends first submodule electric capacity of brachium pontis mutuallyC-al_1When bypass, submodule electric capacityC-al-_1By clamp diode, two brachium pontis reactorsL 0With submodule electric capacityC- au-_N In parallel; A descends brachium pontis mutuallyiIndividual sub-module capacitanceC-al_i When bypass, whereiniValue be 2～N, submodule electric capacityC- al-_i With submodule electric capacityC-al_i-1By clamp diode parallel connection; Auxiliary IGBT moduleT 2When closed, auxiliary capacitorC 2By clamp diode and submodule electric capacityC-al_N In parallel; Auxiliary IGBT moduleT 1When closed, auxiliary capacitorC 1With submodule electric capacityC-bu-_1By clamp diode parallel connection; B goes up brachium pontis mutuallyiIndividual sub-module capacitanceC-bu-_i When bypass, whereiniValue be 1～N-1, submodule electric capacityC-bu-_i With submodule electric capacityC- bu-_i+1By clamp diode parallel connection; B goes up brachium pontis mutuallyNIndividual sub-module capacitanceC-bu_N When bypass, submodule electric capacityC -bu-_N By clamp diode, two brachium pontis reactorsL 0With submodule electric capacityC- bl-_1In parallel; B descends brachium pontis mutuallyiIndividual sub-module capacitanceC-bl_i When bypass, whereiniValue be 1～N-1, submodule electric capacityC -bl-_i With submodule electric capacityC- bl_i+1By clamp diode parallel connection; B descends brachium pontis mutuallyNIndividual sub-module capacitanceC-bl_N When bypass, submodule electric capacityC-bl-_N With auxiliary capacitorC- 2By clamp diode parallel connection; Wherein auxiliary IGBT moduleT 1Triggering signal consistent with the triggering signal that A goes up first submodule of brachium pontis mutually; Auxiliary IGBT moduleT 2Triggering signal descend mutually brachium pontis with BNThe triggering signal of individual submodule is consistent; In the process of orthogonal stream energy conversion, each submodule alternately drops into, bypass, auxiliary IGBT moduleT 1、T 2Be alternately closed, turn-off, A phase upper and lower bridge arm submodule capacitance voltage, under the effect of clamp diode, meets lower column constraint,U C1≥U C-au_1≥U C-au_2…≥U C-au_N ≥U C-al_1≥U C-al_2…≥U C-al_N ≥U C2; B phase upper and lower bridge arm submodule capacitance voltage, under the effect of clamp diode, meets lower column constraint,U C1≤U C-bu_1≤U C-bu_2…≤U C-bu_N ≤U C-bl_1≤U C-bl_2…≤U C-bl_N ≤U C2; Distributed half-bridge/the full-bridge of auxiliary capacitor series-parallel connection MMC based on equality constraint is topological from all pressing, in dynamic process, and auxiliary capacitorC 1Both can be used as the highest electric capacity of A phase voltage, can be used as again the electric capacity that B phase voltage is minimum; Auxiliary capacitorC 2Both can be used as the electric capacity that A phase voltage is minimum, can be used as again the highest electric capacity of B phase voltage; Relying on two equality constraints, max(U Ca-）=min（U Cb-），min（U Ca）=max（U Cb), in A, B phase upper and lower bridge arm 4NIndividual sub-module capacitance,C au_i 、Cal_i 、C bu_i 、C bl_i , whereiniValue is 1～N, and auxiliary capacitorC 1、C 2, voltage in self-balancing state, topological A, B are alternate possesses submodule capacitance voltage from the ability of equalization; If the form of the composition of C phase is consistent with A in topology, pass through auxiliary capacitorC 3、C 4Effect, between the constraints of C, B capacitive coupling voltage and A, B, capacitance voltage constraints is similar; If the form of the composition of C phase is consistent with B in topology, pass through auxiliary capacitorC 3、C4Effect, between the constraints of A, C capacitive coupling voltage and A, B, capacitance voltage constraints is similar, topology possesses submodule capacitance voltage from the ability of equalization; Utilize clamp diode realize mutually between adjacent submodule on the single-phase mobile basis of capacitive energy, the equality constraint max(between dependence auxiliary capacitor voltageU Ca-）=min（U Cb-），min（U Ca）=max（U Cb), or max(U Ca-）=min（U Cc），min（U Ca）=max（U Cc), or max(U Cc）=min（U Cb-），min（U Cc）=max（U Cb), realize the peripheral passage of the alternate mobile formation capacitive energy of capacitive energy, and then keep alternate submodule capacitance voltage stable, be the protection content of this right.
  5. 5. topological from all pressing according to the distributed half-bridge/full-bridge of the auxiliary capacitor based on the equality constraint series-parallel connection MMC described in right 1, it is characterized in that: auxiliary capacitorC 1、C 2As the passage of A, the energy exchange of B capacitive coupling, auxiliary capacitorC 3、C 4As the passage of B, the energy exchange of C capacitive coupling; The function of auxiliary capacitor distributes and utilizes to strengthen system reliability, functional independence in topology.
  6. 6. topological from all pressing according to the distributed half-bridge/full-bridge of the auxiliary capacitor based on the equality constraint series-parallel connection MMC described in right 1, it is characterized in that: the distributed half-bridge/full-bridge of the auxiliary capacitor series-parallel connection MMC based on equality constraint is from all pressing topology, can not only directly apply to flexible DC power transmission field as voltage with multiple levels source transverter, also can be by forming STATCOM (STATCOM), Research on Unified Power Quality Conditioner (UPQC), the application of installations such as THE UPFC (UPFC) are in flexible AC transmission field; Other application scenarios of this invention topology of indirect utilization and thought are in interest field.
CN201610047409.8A 2016-01-25 2016-01-25 Equality constraint-based half-bridge/full-bridge series-parallel MMC self-equalizing topology employing distributed auxiliary capacitors Pending CN105610340A (en)

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