CN102832841A - Modularized multi-level converter with auxiliary diode - Google Patents
Modularized multi-level converter with auxiliary diode Download PDFInfo
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- CN102832841A CN102832841A CN2012103080259A CN201210308025A CN102832841A CN 102832841 A CN102832841 A CN 102832841A CN 2012103080259 A CN2012103080259 A CN 2012103080259A CN 201210308025 A CN201210308025 A CN 201210308025A CN 102832841 A CN102832841 A CN 102832841A
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/20—Active power filtering [APF]
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/30—Reactive power compensation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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- Y02E40/40—Arrangements for reducing harmonics
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Abstract
The invention relates to a modularized multi-level converter with an auxiliary diode. The modularized multi-level converter comprises a three-phase valve body, and three active energy feedback circuits respectively connected to the three-phase valve body, wherein each phase of valve body comprises 2M half-bridge inversion units and 2M-1 auxiliary diodes; direct current capacitors of the 1-(2M-1)th serially connected half-bridge inversion units are respectively connected with one auxiliary diode, and the final (2M)th half-bridge inversion unit is serially connected to form the valve body; the 1-Mth half-bridge inversion units form the upper-half part of the valve body to output a negative polarity voltage; and the (M+1)th to 2Mth half-bridge inversion units form the lower-half part of the valve body to output a positive polarity voltage. The auxiliary diodes and the active energy feedback circuits form a capacitor voltage sharing loop, the modularized multi-level converter realizes capacitance self voltage sharing effect, and realizes that the unit capacitance voltage is measured by using less direct current voltage sensors, thus the detection and the control of multi-level topology are greatly simplified. The modularized multi-level converter can be used in occasions such as reaction compensation and harmonic treatment of a medium-voltage or high-voltage power grid.
Description
Technical field
The present invention relates to a kind of multi-level converter topological structure, particularly about a kind of band booster diode modular multilevel converter that is used for the occasions such as reactive power compensation harmonic improvement of medium-pressure or high pressure electrical network.
Background technology
Continuous development along with power electronic technology; High voltage, big capacity have become the important development direction of power electronic technology; And high voltage, jumbo converters obtain increasing application in high voltage and big capacity occasion; Like novel high-pressure direct current transportation and light high pressure direct current transportation, and the static reacance generator of medium-pressure or high pressure (Static Var Generator, SVG), active filter (Active Power Filter; APF), high voltage converter; Also have novel generation technology: wind power generation, photovoltaic generation or the like, and high voltage, jumbo converters just obtaining comprehensive concern, and huge development and application space are arranged.
In recent years to the research and the applied more and more of high voltage, jumbo multilevel power electronic converter; Comprise many level of diode clamp structure, many level of flying capacitor structure, H bridge cascade connection multi-level structure, modular multilevel transformer configuration (modular multilevel converter, MMC) and mixed structure or the like.Wherein, be fit to medium-pressure or high pressure electrical network and have comparatively at medium voltage network that the topological structure of successful Application mainly is: H bridge cascade multilevel converter topological sum MMC topology.H bridge cascade multilevel converter because simple in structure, modularity is strong, is easy to voltage is raise through series connection, need not transformer can directly be connected to the grid, and aspect the middle pressure reactive power compensation more application is being arranged.The MMC topology is a kind of comparatively novel topological structure; This topological structure can contain dc bus; Help carrying out the transmission of active power; Aspect high voltage direct current transmission, successful Application is arranged, it is current research focus that the research that the MMC topology is used for the medium voltage network reactive power compensation, this topology have also been arranged.
In these two types of topologys of H bridge cascade multilevel converter topological sum MMC topology; Cell capacitance is in suspended state; In actual moving process, because the loss of unit is different, drive signal is undesirable to have factor such as time-delay; Make that the capacitance voltage of unit imbalance problem occurs under not by the situation of special control in the valve body, this is a major issue during these two types of multi-level converters topologys are used.Its solution is mainly through following two kinds of approach at present: a kind of is to carry out the Pressure and Control of cell capacitance voltage through the mode of the auxiliary equalizer circuit of hardware; Another kind is through control algolithm the direct voltage of each unit in the valve body to be controlled separately, realizes all pressing.
In the method for the auxiliary equalizer circuit of hardware, can the Power Exchange auxiliary circuit etc. form.Power Exchange auxiliary circuit method is the dc capacitor configuration subordinate inverter for each unit, and couples together through the auxiliary circuit of isolating transformer with each unit, carries out energy exchange, thus the direct voltage of each unit of balance.Under this method, capacitance voltage can access preferably balanced control, but each unit has all increased subordinate inverter, and isolating transformer etc., and control corresponding, testing circuit make the complexity of circuit increase greatly, and cost also are enhanced.On the other hand, all press algorithm to realize that the Balance Control of capacitance voltage is relatively more popular recently research contents through increasing capacitance voltage.Because the unit connects with the series connection form in the valve body; The valve body output voltage is a unit inverter output voltage sum, therefore under the situation that does not change the valve body output voltage, and adjustment unit output voltage flexibly; Thereby cooperate the valve body electric current to adjust the active power of each unit, realize Pressure and Control.Present method can roughly be summed up as follows.
Peng F; McKeever J W; In " A power line conditioner using cascade multilevel inverters for distribution systems.IEEE Transactions on Industrial Applications; 1998,34 (6): 1293-1298. " literary composition that Adams D J. delivers, studied pulse and realized the control of cell capacitance electric voltage equalization by turns.Cascade multilevel converter to power frequency copped wave; Through rotating the trigger impulse of switching tube; Make that the active power of each unit is relatively more balanced; Help reducing cell capacitance Voltage unbalance degree, do not eliminate the unbalanced effect of capacitance voltage, can be used as the assist control means but often reach.
Liu Z; Liu B; Proposed to regulate output voltage in " A novel DC capacitor voltage balance control method for cascade multilevel STATCOM.IEEE Transactions on Power Electronics, 2012; 27 (1): 14-26. " literary composition that Duan S, et al. deliver through the amplitude and the phase place of regulating each cells modulate ripple; When equipment carries out reactive power compensation, valve body output fundamental current, and phase place only maybe leading or hysteresis line voltage pi/2.According to the phase place and the amplitude of power network current adjustment unit output voltage, and then the active power of adjustment unit, realize the equilibrium control of capacitance voltage.When but this method is applied to harmonic compensation; The valve body output current mainly contains harmonic component, and the active power that harmonic current and fundamental voltage produce is zero, and the fundametal compoment of valve body output current has only very little active current; Therefore when this method is used for harmonic compensation, all the pressure energy force rate a little less than.
Qiu Y; He Y; Proposed in each switch periods in " A DC voltage control method of cascaded H-bridge inverter for power quality conditioner.International Symposium on Industrial Electronics Conference, 2010:2879-2884. " literary composition that Liu Jinjun. delivers, according to the valve body current conditions; The adjustment unit duty cycle of switching changes output voltage; Make the active power of unit in each switch periods obtain adjustment, and then the average active power of adjustment unit, realize capacitor voltage equalizing.This method not only can be used for reactive-load compensation equipment, also can be used for harmonic compensation equipment, but this method also depends on the electric current of valve body very much, need in each switch periods, calculate the duty cycle of switching regulated quantity of each cell capacitance voltage simultaneously.When converter was used as medium voltage network equipment, the valve body number of unit was bigger, and the Pressure and Control amount of calculation is just very big; Can prolong the digitial controller control cycle; And can obviously reduce converter current ring phase margin, influence response speed, even cause the vibration of electric current loop.
In above-mentioned pressure equalizing control method, all need voltage detecting and control circuit be set in each unit, make that the complexity of control circuit is higher.There is limited evidence currently of is seen the research report to detection control how to simplify the multi-level converter topology.
In sum; Solve the above-mentioned key issue that the power electronics multi-level converter exists in medium voltage network is used; Study novel suitable medium-pressure or high pressure electrical network many level topological structure and corresponding control method; Most important for the electric pressure that improves converters with practicality and reliability, simultaneously for build green, intelligent grid is significant.
Summary of the invention
To the problems referred to above, the purpose of this invention is to provide a kind of electric capacity of realizing from all pressing, simplify the band booster diode modular multilevel converter of many level topological structure and control.
For realizing above-mentioned purpose; The present invention takes following technical scheme: a kind of band booster diode modular multilevel converter is characterized in that: it comprises valve body and three active energy back circuit that are connected on the said valve body of three-phase of three-phase Y-connection; Every mutually said valve body includes 2M semi-bridge inversion unit and 2M-1 booster diode, and N=2M-1, M are natural number; To the dc bus capacitor of the said semi-bridge inversion unit of 2M-1 series connection, connect a said booster diode at first respectively, and last 2M the said semi-bridge inversion unit of connecting, constitute said valve body; A said semi-bridge inversion unit constitutes the first half valve body of said valve body, output negative pole property voltage from first to M; M+1 to 2M said semi-bridge inversion unit constitutes the latter half valve body of said valve body, output cathode property voltage; Each said semi-bridge inversion unit includes two power switch pipes and a dc capacitor; Said two power switch pipes series connection back constitutes inverter bridge leg; Said inverter bridge leg is parallelly connected with said dc capacitor; And the mid point of said inverter bridge leg connects the dc capacitor negative electrode of a last adjacent said semi-bridge inversion unit as ac output end; Wherein, the ac output end that is positioned at the semi-bridge inversion unit of said valve body top layer passes through inductance connection electrical network; Said dc capacitor negative electrode connects the inverter bridge leg mid point of next adjacent said semi-bridge inversion unit; In each said semi-bridge inversion unit with said booster diode; The negative electrode of said booster diode connects the anode of booster diode in anode and the last adjacent semi-bridge inversion unit of dc capacitor of this semi-bridge inversion unit respectively, and the anode of this booster diode connects the negative electrode of booster diode in the next adjacent semi-bridge inversion unit; 2M the said semi-bridge inversion unit that is positioned at the said valve body bottom constitutes the common unit that the three-phase valve body connects.
The dc capacitor C of 2M semi-bridge inversion unit of said three-phase valve body
jThe common dc bus.
Each said power switch pipe all adopts insulated gate bipolar thyristor, gate turn off thyristor or integral gate change transistor.
Each said active energy back circuit includes an inverter, an isolating transformer and one group of rectifier bridge that is made up of four diodes; The direct voltage of said valve body top layer semi-bridge inversion unit output changes alternating voltage into through said inverter; Importing said isolating transformer isolates; Import said rectifier bridge through said isolating transformer secondary side, said rectifier bridge dc output end connects the common unit that is made up of said valve body bottom semi-bridge inversion unit.
Each said active energy back circuit is formed by isolating transformer, capacitance with by the rectifier bridge that four diodes constitute; The elementary end of said isolating transformer connects the inverter bridge leg mid point of said valve body top layer semi-bridge inversion unit; The elementary other end of said isolating transformer connects said capacitance one end, and the other end of said capacitance connects the dc bus negative pole of said valve body top layer semi-bridge inversion unit; Said isolating transformer secondary side connects the ac input end of said rectifier bridge; The direct-flow positive pole output of said rectifier bridge connects the positive pole of said valve body bottom semi-bridge inversion unit dc bus, and the output of the direct current negative pole of said rectifier bridge connects the negative pole of said valve body bottom semi-bridge inversion unit dc bus.
Said isolating transformer no-load voltage ratio is 1:2.
The present invention is owing to take above technical scheme; It has the following advantages: 1, the present invention is owing to adopt the valve body of three-phase Y-connection; And dispose active energy back circuit in every phase valve body one side; And first of every phase valve body to dc bus capacitor place, 2M-1 semi-bridge inversion unit connects booster diode; Therefore through booster diode and active energy back circuit can realize all semi-bridge inversion unit from all pressing, and can be totally independent of the electric current of main circuit from Pressure and Control, do not receive the influence of main circuit electric current and voltage.2, the present invention since in every phase valve body the semi-bridge inversion cell capacitance all press with valve body in the inversion unit number irrelevant, therefore be easy to realize high voltage output.3, the capacitance voltage of unit needs to detect owing to have only seldom in the entire circuit topological structure in the present invention, has significantly reduced the number of direct voltage transducer, helps simplified measurement and control circuit.4, the present invention is owing to adopt active energy back circuit only to comprise an isolating transformer, a capacitance and one group of rectifier bridge, and it is simple in structure, has simplified the structure of entire circuit greatly.5, the present invention since the capacitance voltage in the entire circuit topological structure all press through booster diode and active energy back circuit and realize; Control is simple; Increasing and increase not with the semi-bridge inversion number of unit; Therefore can the control of the entire circuit function of tonic chord not exerted an influence the convenient function of tonic chord controlled function of complicacy that realizes.The present invention can be widely used in the converters topological structure of high voltage, big capacity occasion.
Description of drawings
Fig. 1 is an overall structure sketch map of the present invention;
Fig. 2 is a semi-bridge inversion cellular construction sketch map of the present invention;
Fig. 3 is that valve body of the present invention connects active energy back electrical block diagram;
Fig. 4 is that active energy back circuit of the present invention adopts the active energy back circuit diagram that need not extra active switch, and the inverter in the shared valve body top layer of the active energy back circuit semi-bridge inversion unit main circuit;
Fig. 5 is the structural representation that active energy back circuit of the present invention adopts separate inverter unit;
Fig. 6 is the circuit mode sketch map that the different on off states of four kinds of adjacent two the semi-bridge inversion unit of the present invention constitute; Fig. 6 (a) is circuit mode 1 sketch map, and Fig. 6 (b) is circuit mode 2 sketch mapes, and Fig. 6 (c) is circuit mode 3 sketch mapes, and Fig. 6 (d) is circuit mode 4 sketch mapes;
Fig. 7 is when 7 level band booster diode modular multilevel converters are operated in the harmonic compensation state in the embodiment of the invention, the capacitance voltage oscillogram of a phase valve body;
Fig. 8 is the partial enlarged drawing in Fig. 7 steady-state process;
Fig. 9 is when 7 level band booster diode modular multilevel converters are operated in idle output state in the embodiment of the invention, the capacitance voltage waveform of a phase valve body;
Figure 10 is that active energy back circuit of the present invention adopts independent half-bridge inverter structural representation.
Embodiment
The present invention provides a kind of band booster diode modular multilevel converter (MMC); It mainly is the converters topological structure that is used for high voltage, big capacity occasion; This converter topology structure can effectively solve the unbalanced problem of capacitance voltage in present many level topological structure, and can be applicable to the occasions such as reactive power compensation harmonic improvement of medium-pressure or high pressure electrical network.Below in conjunction with accompanying drawing and embodiment the present invention is carried out detailed description.
As shown in Figure 1, the present invention includes valve body 10 and three active energy back circuit (AEFC) 20 that are connected on the three-phase valve body 10 of three-phase Y-connection.
Every phase valve body 10 includes 2M semi-bridge inversion unit 11 and (2M-1) individual booster diode D
N, wherein, N=2M-1, M are any natural number, concrete value is confirmed by requirement of engineering.To the dc bus capacitor of the semi-bridge inversion unit 11 of (2M-1) individual series connection, connect a booster diode D at first respectively
N, and last 2M the semi-bridge inversion unit 11 of connecting, constitute valve body 10.Wherein, from the first half valve body of first 11 formation valve bodies 10, output negative pole property voltage to M semi-bridge inversion unit; The latter half valve body of M+1 11 formation valve bodies 10 to 2M semi-bridge inversion unit, output cathode property voltage.
In the foregoing description, as shown in Figure 2, each semi-bridge inversion unit 11 includes two power switch tube S
J1, S
J2With a dc capacitor C
jTwo power switch tube S
J1And S
J2The series connection back constitutes inverter bridge leg 111, inverter bridge leg 111 and dc capacitor C
jParallel connection, and the mid point of inverter bridge leg 111 connects the dc capacitor C of a j-1 adjacent semi-bridge inversion unit 11 as ac output end
J-1Negative electrode, wherein, the ac output end that is positioned at the semi-bridge inversion unit 11 of valve body 10 top layers connects electrical network through inductance; Dc capacitor C
jNegative electrode connects inverter bridge leg 111 mid points of next j+1 adjacent semi-bridge inversion unit 11.At each band booster diode D
N Semi-bridge inversion unit 11 in, booster diode D
NNegative electrode connect the dc capacitor C of this semi-bridge inversion unit 11 respectively
jAnode and a last adjacent semi-bridge inversion unit 11 in booster diode D
N-1Anode, this booster diode D
NAnode connect booster diode D in the next adjacent semi-bridge inversion unit 11
N+1Negative electrode.Wherein, each power switch tube S
J1, S
J2All can adopt insulated gate bipolar thyristor (IGBT), gate turn off thyristor (GTO) or integral gate change transistor (IGCT).
Among above-mentioned each embodiment, 2M the semi-bridge inversion unit 11 that is positioned at valve body 10 bottoms constitutes the common unit that three-phase valve body 10 connects.The dc capacitor C of 2M semi-bridge inversion unit 11 of three-phase valve body 10
jCan the common dc bus, thus help three-phase valve body 10 dc bus capacitor C
jThe balance of voltage also can be untied the electric capacity of three-phase common DC bus separately, becomes three valve bodies that work alone 10.
Among above-mentioned each embodiment, like Fig. 3, shown in Figure 4, each active energy back circuit (AEFC) 20 all adopts a kind of AEFC that need not extra active switch, and this circuit is only by isolating transformer (perhaps being called coupling inductance) T
Ac, capacitance C
AcForm with the rectifier bridge that constitutes by four diodes 21; In band booster diode modular multilevel converter topology of the present invention; Inverter (being inverter bridge leg 111) in the shared valve body of this AEFC 10 top layer semi-bridge inversion unit 11 main circuits need not to add in addition active switch and control circuit.Isolating transformer T
AcAn elementary end connects inverter bridge leg 111 mid points (being the end that semi-bridge inversion unit 11 exchanges output) of valve body 10 top layer semi-bridge inversion unit 11, isolating transformer T
AcThe elementary other end connects capacitance C
AcOne end, capacitance C
AcThe other end connect the dc bus negative pole (being the semi-bridge inversion unit 11 ac output end other ends) of valve body 10 top layer semi-bridge inversion unit 11.Isolating transformer T
AcSecondary side connects the ac input end of rectifier bridge 24; The direct-flow positive pole output of rectifier bridge 24 connects the positive pole of valve body 10 bottom semi-bridge inversion unit 11 dc buss, and the output of the direct current negative pole of rectifier bridge 24 connects the negative pole of valve body 10 bottom semi-bridge inversion unit 11 dc buss.The direct voltage of valve body 10 top layer semi-bridge inversion unit 11 is through capacitance C
AcAfter changing alternating voltage into, through isolating transformer T
AcIsolate, then input and isolating transformer T
AcThe rectifier bridge 24 that secondary side connects; The output of rectifier bridge 24 direct currents connects the dc bus of bottom semi-bridge inversion unit 11; Thereby realize that energy is transferred to bottom semi-bridge inversion unit 11 by top layer semi-bridge inversion unit 11, realize that the capacitance voltage of top layer semi-bridge inversion unit 11 and bottom semi-bridge inversion unit 11 is balanced.Wherein, isolating transformer T
AcBe operated in the switching frequency of power switch pipe, i.e. the carrier frequency of pulse-width modulation, then isolating transformer T
AcWith capacitance C
AcVolume can be smaller.
Among above-mentioned each embodiment, as shown in Figure 5, each AEFC 20 can also adopt the AEFC with separate inverter unit structure, and it comprises inverter 22, isolating transformer 23 and rectifier bridge 24.The direct voltage of valve body 10 top layer semi-bridge inversion unit, 11 outputs changes alternating voltage into through inverter 22; This alternating voltage input isolating transformer 23 is isolated; Through isolating transformer 23 secondary side input rectifying bridges 24; Rectifier bridge 24 dc output ends connect the common unit that is made up of valve body 10 bottom semi-bridge inversion unit 11; Thereby realize that energy is transferred to bottom semi-bridge inversion unit 11 by top layer semi-bridge inversion unit 11, realized that the capacitance voltage of top layer semi-bridge inversion unit 11 and bottom semi-bridge inversion unit 11 is balanced.
In sum; Because in band booster diode modular multilevel converter topology of the present invention; Circuit working principle between each half-bridge inversion unit 11 is identical, and for the purpose of convenient explanation, the present invention only introduces the circuit working principle of contiguous two basic semi-bridge inversion unit 11.Simultaneously; Though each valve body 10 is divided into positive polarity and two parts of negative polarity; And this two-part operation principle also is similarly, so the present invention is that example describes with the working condition of two semi-bridge inversion unit 11 of the vicinity in the output cathode property voltage segment in the valve body 10.
Shown in Fig. 6 (a)~Fig. 6 (d), S wherein
J1And S
J2Be the upper and lower power switch of j semi-bridge inversion unit 11, C
DjBe the dc bus capacitor of this semi-bridge inversion unit 11, and D
jIt is the booster diode of this semi-bridge inversion unit 11; S
(j+1) 1And S
(j+1) 2Be the upper and lower power switch of j+1 semi-bridge inversion unit 11, C
Dj+1Be the dc bus capacitor of this semi-bridge inversion unit 11, and D
J+1Be the booster diode of this semi-bridge inversion unit 11, then each circuit working mode after semi-bridge inversion unit 11 series connection of these two vicinities is following:
In the circuit mode that four kinds that are close to two semi-bridge inversion unit 11 different on off states constitute; For circuit mode 1 (shown in Fig. 6 (a)) and circuit mode 3 (shown in Fig. 6 (c)); Regardless of the capacitance voltage magnitude relationship of two semi-bridge inversion unit 11, booster diode D
jCan conducting; And for circuit mode 2 (shown in Fig. 6 (b)) and circuit mode 4 (shown in Fig. 6 (d)), i.e. power switch S
(j+1) 2The mode of conducting then is booster diode D
jThe circuit mode of possible conducting.If two semi-bridge inversion unit 11 capacitance voltages relations are u
Dj<u
Dj+1, when then switching to circuit mode 2 or circuit mode 4, power switch S
(j+1) 2Conducting, then booster diode D
jWill conducting, produce equalizing current i
Acj, capacitor C
Dj+1Can be to C
DjCharging.When circuit in the course of the work, switch S
(j+1) 2Can under the effect of PWM drive signal, constantly turn on and off, this makes capacitor C
Dj+1Can be repeatedly to C
DjCharging is up to u
Dj=u
Dj+1In practical application, the power switch of each semi-bridge inversion unit 11 can be in the copped wave state of upper frequency always, therefore u can't occur
DjBe starkly lower than u
Dj+1Situation, and because there is parasitic parameter in circuit, equalizing current i then
AcjCan be smaller.
For reverse voltage output in the valve body 10; Its operation principle and positive polarity voltage output are similar; Can analyze by above-mentioned form, not do here and give unnecessary details, thereby; Be made up of in the valve body 10 of MMC 2M band booster diode basic semi-bridge inversion unit 11 series connection, semi-bridge inversion unit 11 capacitance voltages can be by following sequence arrangement:
u
d1≥u
d2≥…≥u
dj≥…≥u
dN-1≥u
dN (1)
Hence one can see that; Can only realize unidirectional all pressures of cell capacitance by MMC valve body 10 topologys of being with the series connection of booster diode elementary cell to constitute; Can not realize the equilibrium of whole valve body cell capacitance voltage, so the present invention adopts AEFC20 to improve the uniform voltage function of the capacitance voltage of this topology.
For every phase valve body 10, its capacitance voltage relation is suc as formula shown in (1).If the active loss of semi-bridge inversion unit 11 relation is in the valve body 10:
P
loss1>P
loss2>…>P
lossj>…>P
lossN (2)
Then semi-bridge inversion unit 11 capacitance voltages just trend towards equilibrium in the valve body 10; But the relation of semi-bridge inversion unit 11 active loss is not necessarily above-mentioned relation; Therefore the capacitance voltage of valve body 10 top layer semi-bridge inversion unit 11 may be much higher than the capacitance voltage of bottom semi-bridge inversion unit 11, and the present invention adopts AEFC20 that top layer and bottom semi-bridge inversion unit 11 capacitance voltages are controlled.Utilize AEFC 20 that valve body 10 top layer semi-bridge inversion unit 11 are coupled together with bottom semi-bridge inversion unit 11; Give bottom semi-bridge inversion unit 11 through AEFC 20 with the NE BY ENERGY TRANSFER of top layer semi-bridge inversion unit 11; Reduce the poor of its capacitance voltage, the two is equated, that is:
u
d1=u
dN。(3)
Then inequality (1) just becomes congruence relation, promptly realize all semi-bridge inversion unit 11 capacitance voltages in the valve body 10 from all pressing.
When employing need not extra active switch AEFC 20, during this circuit working, top layer semi-bridge inversion unit 11 can output PWM type pulse voltage u
Ac, contain DC component and low frequency component in this voltage, they will be easy to through isolating transformer T
AcMagnetizing inductance L
m, and fall at capacitance C
AcOn, voltage u like this
AcLow frequency component just can not sensed isolating transformer T basically
AcSecondary side; And voltage u
AcThe switching frequency component will be easy to through capacitance C
AcAnd fall at magnetizing inductance L
mOn, then most switching frequency components can be sensed isolating transformer T
AcSecondary winding on, isolating transformer T so
AcSecondary side can induce impulse type voltage; Become direct voltage through rectifier circuit; Thereby can realize utilizing the component of voltage of switching frequency to give bottom semi-bridge inversion unit 11, realize that dc capacitor voltage is balanced the power transfer of valve body 10 top layer semi-bridge inversion unit 11.Wherein, isolating transformer T
AcNo-load voltage ratio is 1:2, i.e. time limit number of turn w
T=2.
In addition, because every phase valve body 10 is bipolar voltage output, bottom does not bear over the ground as the common semi-bridge inversion unit 11 of common unit or the DC common mode of electrical network mid point like this, has reduced insulating requirements.Each valve body 10 has 2M semi-bridge inversion unit 11; Can export the 2M+1 level voltage; And three-phase valve body 10 adopts star structures to connect, and three-phase valve body 10 bottom semi-bridge inversion unit 11 can the common dc bus, like this entire circuit only need at the top layer semi-bridge inversion unit 11 and a common semi-bridge inversion unit 11 (being common unit) the configuration voltages transducer of 3 valve bodies 10; Totally 4, be less than traditional structure greatly.In addition, the AEFC of the no subordinate inverter of every phase valve body 10 configurations is to realize all pressing certainly of valve body 10 dc capacitors.The existence of common unit makes and reduces the dc voltage fluctuation amplitude of this unit in compensation during symmetrical component, and provides the three-phase valve body 10 energy exchange passages, helps the capacitance voltage of balance three-phase valve body 10.
Through specific embodiment principle of the present invention is done further to introduce below.
Embodiment: according to principle of the present invention; 7 level band booster diode modular multilevel converter model machines of Y-connection have been built; When it is operated in the harmonic compensation state; Can obtain the overall condition waveform (like Fig. 7, shown in Figure 8) of experimental result; Wherein, the waveform order is from top to bottom successively: a phase valve body electric current of electrical network a phase current, band booster diode MMC, a phase valve body common unit capacitance voltage, the 5th grade of cell capacitance voltage of a phase, the 4th grade of cell capacitance voltage of a phase, a phase 3rd level cell capacitance voltage, the 2nd grade of cell capacitance voltage of a phase, a be the 1st grade of cell capacitance voltage mutually.This shows that the capacitance voltages at different levels in the stable state valve body are balanced good.When 7 level band booster diode modular multilevel converter model machines are operated in idle output state (as shown in Figure 9); The waveform sequence consensus of exporting when the experimental waveform order of its output is operated in the harmonic compensation state with it (as shown in Figure 7); This shows; Because the output single-phase power, power frequency fluctuation has appearred in the capacitance voltage of unit at different levels, but the capacitance voltage mean value of valve body unit at different levels still keeps than poised state.
Above-mentioned each embodiment only is used to explain the present invention; The connection of each parts and structure all can change to some extent; For example AEFC 20 can also adopt other various ways; Shown in figure 10, the inverter that will have in the active energy back circuit of separate inverter unit adopts the half-bridge structure inverter to replace.On the basis of technical scheme of the present invention, all improvement and equivalents of the connection and the structure of individual component being carried out according to the principle of the invention all should not got rid of outside protection scope of the present invention.
Claims (7)
1. be with booster diode modular multilevel converter for one kind, it is characterized in that: it comprises valve body and three active energy back circuit that are connected on the said valve body of three-phase of three-phase Y-connection; Every mutually said valve body includes 2M semi-bridge inversion unit and 2M-1 booster diode, and N=2M-1, M are natural number; To the dc bus capacitor of the said semi-bridge inversion unit of 2M-1 series connection, connect a said booster diode at first respectively, and last 2M the said semi-bridge inversion unit of connecting, constitute said valve body; A said semi-bridge inversion unit constitutes the first half valve body of said valve body, output negative pole property voltage from first to M; M+1 to 2M said semi-bridge inversion unit constitutes the latter half valve body of said valve body, output cathode property voltage;
Each said semi-bridge inversion unit includes two power switch pipes and a dc capacitor; Said two power switch pipes series connection back constitutes inverter bridge leg; Said inverter bridge leg is parallelly connected with said dc capacitor; And the mid point of said inverter bridge leg connects the dc capacitor negative electrode of a last adjacent said semi-bridge inversion unit as ac output end; Wherein, the ac output end that is positioned at the semi-bridge inversion unit of said valve body top layer passes through inductance connection electrical network; Said dc capacitor negative electrode connects the inverter bridge leg mid point of next adjacent said semi-bridge inversion unit; In each said semi-bridge inversion unit with said booster diode; The negative electrode of said booster diode connects the anode of booster diode in anode and the last adjacent semi-bridge inversion unit of dc capacitor of this semi-bridge inversion unit respectively, and the anode of this booster diode connects the negative electrode of booster diode in the next adjacent semi-bridge inversion unit;
2M the said semi-bridge inversion unit that is positioned at the said valve body bottom constitutes the common unit that the three-phase valve body connects.
2. a kind of band booster diode modular multilevel converter as claimed in claim 1 is characterized in that: the dc capacitor C of 2M semi-bridge inversion unit of said three-phase valve body
jThe common dc bus.
3. a kind of band booster diode modular multilevel converter as claimed in claim 1, it is characterized in that: each said power switch pipe all adopts insulated gate bipolar thyristor, gate turn off thyristor or integral gate change transistor.
4. a kind of band booster diode modular multilevel converter as claimed in claim 2, it is characterized in that: each said power switch pipe all adopts insulated gate bipolar thyristor, gate turn off thyristor or integral gate change transistor.
5. like claim 1 or 2 or 3 or 4 described a kind of band booster diode modular multilevel converters, it is characterized in that: each said active energy back circuit includes an inverter, an isolating transformer and one group of rectifier bridge that is made up of four diodes; The direct voltage of said valve body top layer semi-bridge inversion unit output changes alternating voltage into through said inverter; Importing said isolating transformer isolates; Import said rectifier bridge through said isolating transformer secondary side, said rectifier bridge dc output end connects the common unit that is made up of said valve body bottom semi-bridge inversion unit.
6. like claim 1 or 2 or 3 or 4 described a kind of band booster diode modular multilevel converters, it is characterized in that: each said active energy back circuit is formed by isolating transformer, capacitance with by the rectifier bridge that four diodes constitute; The elementary end of said isolating transformer connects the inverter bridge leg mid point of said valve body top layer semi-bridge inversion unit; The elementary other end of said isolating transformer connects said capacitance one end, and the other end of said capacitance connects the dc bus negative pole of said valve body top layer semi-bridge inversion unit; Said isolating transformer secondary side connects the ac input end of said rectifier bridge; The direct-flow positive pole output of said rectifier bridge connects the positive pole of said valve body bottom semi-bridge inversion unit dc bus, and the output of the direct current negative pole of said rectifier bridge connects the negative pole of said valve body bottom semi-bridge inversion unit dc bus.
7. a kind of band booster diode modular multilevel converter as claimed in claim 6, it is characterized in that: said isolating transformer no-load voltage ratio is 1:2.
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