CN105471259A - Auxiliary capacitor centralized half-bridge/single-clamping series-parallel MMC automatic voltage-equalizing topology based on equality constraint - Google Patents
Auxiliary capacitor centralized half-bridge/single-clamping series-parallel MMC automatic voltage-equalizing topology based on equality constraint Download PDFInfo
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- CN105471259A CN105471259A CN201610047405.XA CN201610047405A CN105471259A CN 105471259 A CN105471259 A CN 105471259A CN 201610047405 A CN201610047405 A CN 201610047405A CN 105471259 A CN105471259 A CN 105471259A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J1/00—Circuit arrangements for dc mains or dc distribution networks
Abstract
The invention provides an auxiliary capacitor centralized half-bridge/single-clamping series-parallel MMC automatic voltage-equalizing topology based on equality constraint. According to the half-bridge/single-clamping series-parallel MMC automatic voltage-equalizing topology, a half-bridge/single-clamping series-parallel MMC model is electrically connected with an automatic voltage-equalizing auxiliary circuit through 6N auxiliary switches in the auxiliary circuit; when the auxiliary switches are closed, the auxiliary capacitor centralized half-bridge/single-clamping series-parallel MMC automatic voltage-equalizing topology based on the equality constraint is formed by the half-bridge/single-clamping series-parallel MMC model and the automatic voltage-equalizing auxiliary circuit; and when the auxiliary switches are opened, the topology is equivalent to the half-bridge/single-clamping series-parallel MMC topology. Under a condition of de-emphasizing the difference of the two kinds of topologies, 6K mechanical switches can be omitted from the auxiliary switches; the half-bridge/single-clamping series-parallel MMC automatic voltage-equalizing topology can realize clamping for direct current side faults; meanwhile, the capacitive voltage balance for a sub module can be automatically realized on a basis of completing direct current/alternating current energy conversion without depending on special voltage-equalizing control; and in addition, the triggering frequency and the capacitance value of the sub module can be correspondingly lowered, and the MMC base frequency modulation can be realized.
Description
Technical field
The present invention relates to flexible transmission field, being specifically related to the centralized half-bridge of a kind of auxiliary capacitor based on equality constraint/mono-clamp series-parallel connection MMC from all pressing topology.
Background technology
Modularization multi-level converter MMC is the developing direction of following HVDC Transmission Technology, MMC adopts submodule (Sub-module, SM) mode of cascade constructs converter valve, avoid the direct series connection of large metering device, reduce the conforming requirement of device, be convenient to dilatation and redundant configuration simultaneously.Along with the rising of level number, output waveform, close to sinusoidal, effectively can avoid the defect of low level VSC-HVDC.
Half-bridge/mono-clamp series-parallel connection MMC is combined by half-bridge submodule and single clamp submodule.Half-bridge submodule by 2 IGBT module, 1 sub-module capacitance, 1 thyristor and 1 mechanical switch are formed; Single clamp submodule is by 3 IGBT module, 1 sub-module capacitance, and a diode and 1 mechanical switch are formed.This series-parallel connection MMC, cost is low, and running wastage is little, simultaneously can clamp DC side fault.
Different from two level, three level VSC, the DC voltage of half-bridge/mono-clamp series-parallel connection MMC is not supported by a bulky capacitor, but is supported by a series of separate suspension submodule capacitances in series.In order to ensure the waveform quality that AC voltage exports and ensure that in module, each power semiconductor bears identical stress, also in order to better support direct voltage, reduce alternate circulation, must ensure that submodule capacitor voltage is in the state of dynamic stability in the periodicity flowing of brachium pontis power.
Sequence based on capacitance voltage sequence all presses algorithm to be the main flow thinking solving half-bridge/mono-clamp series-parallel connection MMC Neutron module capacitance voltage equalization problem at present.But the realization of ranking function must rely on the Millisecond sampling of capacitance voltage, needs a large amount of transducers and optical-fibre channel to be coordinated; Secondly, when group number of modules increases, the operand of capacitance voltage sequence increases rapidly, for the hardware designs of controller brings huge challenge; In addition, sequence all presses the cut-off frequency of the realization of algorithm to submodule to have very high requirement, cut-offs frequency and all presses effect to be closely related, in practice process, may because all press the restriction of effect, the trigger rate of raising submodule of having to, and then bring the increase of converter loss.
Document " ADC-LinkVoltageSelf-BalanceMethodforaDiode-ClampedModula rMultilevelConverterWithMinimumNumberofVoltageSensors ", proposes a kind of clamp diode and transformer of relying on to realize the thinking of MMC submodule capacitor voltage equilibrium.But the program to a certain degree destroys the modular nature of submodule in design, submodule capacitive energy interchange channel is also confined to mutually, the existing structure of MMC could not be made full use of, while being introduced in of three transformers makes control strategy complicated, also can bring larger improvement cost.
Summary of the invention
For the problems referred to above, the object of the invention is to propose a kind of economy, modular, do not rely on and all press algorithm, simultaneously can corresponding reduction submodule trigger rate and capacitor's capacity and half-bridge/mono-clamp series-parallel connection MMC with DC Line Fault clamping ability from all pressing topology.
The concrete constituted mode of the present invention is as follows.
The centralized half-bridge of auxiliary capacitor based on equality constraint/mono-clamp series-parallel connection MMC is from all pressing topology, comprise the half-bridge MMC model be made up of A, B, C three-phase, each brachium pontis of A, B, C three-phase is in series by K half-bridge submodule, N-K single clamp submodule and 1 brachium pontis reactor respectively; Comprise by 6N auxiliary switch (6K mechanical switch, 6N-6K IGBT module), 6N+5 clamp diode, 2 auxiliary capacitors, 2 auxiliary IGBT module compositions from all pressing subsidiary loop.
The centralized half-bridge of the above-mentioned auxiliary capacitor based on equality constraint/mono-clamp series-parallel connection MMC all presses topology certainly, in series-parallel connection MMC model, and A phase upper and lower bridge arm, in single clamp submodule, the positive pole of diode connexon module capacitance, the negative pole of IGBT module connexon module capacitance.1st submodule of brachium pontis in A phase, its submodule electric capacity negative pole is connected with the 2nd sub-module I GBT module mid point of brachium pontis in A phase downwards, and its submodule IGBT module mid point is upwards connected with DC bus positive pole; I-th submodule of brachium pontis in A phase, wherein the value of i is 2 ~ K-1, its submodule electric capacity negative pole is connected with the i-th+1 sub-module I GBT module mid point of brachium pontis in A phase downwards, and its submodule IGBT module mid point is upwards connected with the i-th-1 sub-module capacitance negative pole of brachium pontis in A phase; K half-bridge submodule of brachium pontis in A phase, its submodule electric capacity negative pole is connected with K+1 sub-module I GBT module mid point of brachium pontis in A phase downwards, and its submodule IGBT module mid point is upwards connected with K-1 sub-module capacitance negative pole of brachium pontis in A phase; A jth submodule of brachium pontis in A phase, wherein the value of j is K+2 ~ N-1, its submodule diode is connected with brachium pontis jth+1 sub-module I GBT module mid point in A phase downwards with IGBT module tie-point, and its submodule IGBT module mid point is upwards connected with IGBT module tie-point with-1 the submodule diode of brachium pontis jth in A phase; The N number of submodule of brachium pontis in A phase, its submodule diode and IGBT module tie-point are downwards through two brachium pontis reactor L
0be connected with the 1st sub-module I GBT module mid point of the lower brachium pontis of A phase, its submodule IGBT module mid point is upwards connected with IGBT module tie-point with N-1 submodule diode of brachium pontis in A phase; I-th submodule of the lower brachium pontis of A phase, wherein the value of i is 2 ~ K-1, its submodule electric capacity negative pole downwards brachium pontis the i-th+1 sub-module I GBT module mid point lower to A phase is connected, and its IGBT module mid point upwards brachium pontis the i-th-1 sub-module capacitance negative pole lower to A phase is connected; K submodule of the lower brachium pontis of A phase, its submodule electric capacity negative pole downwards brachium pontis K+1 sub-module I GBT module mid point lower to A phase is connected, and its submodule IGBT module mid point upwards brachium pontis K-1 sub-module capacitance negative pole lower to A phase is connected; The lower brachium pontis jth submodule of A phase, wherein the value of j is K+2 ~ N-1, its submodule diode and IGBT module tie-point downwards brachium pontis jth+1 sub-module I GBT module mid point lower to A phase are connected, and its submodule IGBT module mid point upwards brachium pontis jth-1 submodule diode lower to A phase is connected with IGBT module tie-point; The lower N number of submodule diode of brachium pontis of A phase is connected with DC bus negative pole downwards with IGBT module tie-point, and its submodule IGBT module mid point is upwards connected with IGBT module tie-point with N-1 submodule diode of brachium pontis under A phase.B phase upper and lower bridge arm, in single clamp submodule, IGBT module connexon module capacitance positive pole, diode connexon module capacitance negative pole, 1st submodule of upper brachium pontis, its submodule capacitance cathode is upwards connected with DC bus positive pole, and its submodule IGBT module mid point is connected with the 2nd sub-module capacitance positive pole of brachium pontis in B phase downwards; I-th submodule of brachium pontis in B phase, wherein the value of i is 2 ~ K-1, its submodule capacitance cathode is upwards connected with the i-th-1 sub-module I GBT module mid point of brachium pontis in B phase, and its submodule IGBT module mid point is connected with the i-th+1 sub-module capacitance positive pole of brachium pontis in B phase downwards; K submodule of brachium pontis in B phase, its submodule capacitance cathode is upwards connected with K-1 sub-module I GBT module mid point of brachium pontis in B phase, and its submodule IGBT module mid point is connected with diode connection point with brachium pontis K+1 in B phase sub-module I GBT module downwards; A jth submodule of brachium pontis in B phase, wherein the value of j is K+2 ~ N-1, its submodule IGBT module and diode connection point are upwards connected with brachium pontis jth-1 sub-module I GBT module mid point in B phase, and its submodule IGBT module mid point is connected with diode connection point with the sub-module I GBT module of brachium pontis jth+1 in B phase downwards; The N number of submodule of brachium pontis in B phase, its submodule IGBT module and diode connection point are upwards connected with brachium pontis N-1 in B phase sub-module I GBT module mid point, and its submodule IGBT module mid point is downwards through two brachium pontis reactor L
0be connected with the 1st sub-module capacitance positive pole of the lower brachium pontis of B phase; I-th submodule of the lower brachium pontis of B phase, wherein the value of i is 2 ~ K-1, its submodule capacitance cathode is upwards connected with the i-th-1 sub-module I GBT module mid point of brachium pontis under B phase, and its submodule IGBT module mid point is connected with the i-th+1 sub-module capacitance positive pole of brachium pontis under B phase downwards; K submodule of the lower brachium pontis of B phase, its submodule capacitance cathode upwards brachium pontis K-1 sub-module I GBT module mid point lower to B phase is connected, and its submodule IGBT module mid point downwards brachium pontis K+1 sub-module I GBT module lower to B phase is connected with diode connection point; The lower brachium pontis jth submodule of B phase, wherein the value of j is K+2 ~ N-1, its submodule IGBT module and diode connection point upwards brachium pontis jth-1 sub-module I GBT module mid point lower to B phase are connected, and its submodule IGBT module mid point downwards brachium pontis jth+1 sub-module I GBT module lower to B phase is connected with diode connection point; The lower N number of submodule of brachium pontis of B phase, its submodule IGBT module and diode connection point upwards brachium pontis N-1 sub-module I GBT module mid point lower to B phase are connected, and its submodule IGBT module mid point is connected with DC bus negative pole downwards.The connected mode of C phase upper and lower bridge arm submodule is consistent with A phase or B.
The centralized half-bridge of the above-mentioned auxiliary capacitor based on equality constraint/mono-clamp series-parallel connection MMC is from all pressing topology, and from all pressing in subsidiary loop, first auxiliary IGBT module negative pole of auxiliary capacitor positive pole connection connects clamp diode and be incorporated to DC bus positive pole; Second auxiliary capacitor negative pole connects auxiliary IGBT module positive pole connection clamp diode and is incorporated to DC bus negative pole.Clamp diode, by the 1st sub-module capacitance and first auxiliary capacitor positive pole in brachium pontis in auxiliary switch connection A phase; By i-th sub-module capacitance and the i-th+1 sub-module capacitance positive pole in brachium pontis in auxiliary switch connection A phase, wherein the value of i is 1 ~ N-1; By N number of submodule electric capacity and lower brachium pontis the 1st the sub-module capacitance positive pole of A phase in brachium pontis in auxiliary switch connection A phase; Connect i-th sub-module capacitance brachium pontis the i-th+1 sub-module capacitance positive pole lower to A phase in the lower brachium pontis of A phase by auxiliary switch, wherein the value of i is 1 ~ N-1; N number of submodule electric capacity and second auxiliary capacitor positive pole in the lower brachium pontis of A phase is connected by auxiliary switch.Clamp diode, connects the negative pole of the 1st sub-module capacitance and first auxiliary capacitor in brachium pontis in B phase by auxiliary switch; Connected the negative pole of i-th sub-module capacitance and the i-th+1 sub-module capacitance in brachium pontis in B phase by auxiliary switch, wherein the value of i is 1 ~ N-1; By the negative pole of N number of submodule electric capacity in brachium pontis in auxiliary switch connection B phase with lower brachium pontis the 1st the sub-module capacitance of B phase; To be connected in the lower brachium pontis of B phase the negative pole of i-th sub-module capacitance and the sub-module capacitance of brachium pontis the i-th+1 under B phase by auxiliary switch, wherein the value of i is 1 ~ N-1; The negative pole of N number of submodule electric capacity and second auxiliary capacitor in the lower brachium pontis of B phase is connected by auxiliary switch.The annexation of C phase clamp diode is corresponding with the annexation of its submodule.
Accompanying drawing explanation
Fig. 1 is the structural representation of half-bridge submodule;
Fig. 2 is the structural representation of single clamp submodule;
Fig. 3 is from all pressing topology based on the centralized half-bridge of auxiliary capacitor/mono-clamp series-parallel connection MMC of equality constraint.
Embodiment
For setting forth performance of the present invention and operation principle further, be specifically described to the constituted mode invented and operation principle below in conjunction with accompanying drawing.But be not limited to Fig. 3 based on half-bridge/mono-clamp series-parallel connection MMC of this principle from all pressing topology.
With reference to figure 3, the centralized half-bridge of auxiliary capacitor based on equality constraint/mono-clamp series-parallel connection MMC is from all pressing topology, comprise the half-bridge/mono-clamp series-parallel connection MMC model be made up of A, B, C three-phase, each brachium pontis of A, B, C three-phase is in series by K half-bridge submodule, N-K single clamp submodule and 1 brachium pontis reactor respectively; Comprise by 6N auxiliary switch (6K mechanical switch, 6N-6K IGBT module), 6N+5 clamp diode, 2 auxiliary capacitors, 2 auxiliary IGBT module compositions from all pressing subsidiary loop.
In half-bridge/mono-clamp series-parallel connection MMC model, A phase upper and lower bridge arm, in single clamp submodule, the positive pole of diode connexon module capacitance, the negative pole of IGBT module connexon module capacitance.1st submodule of brachium pontis in A phase, its submodule electric capacity C-
au-_1negative pole is connected with the 2nd sub-module I GBT module mid point of brachium pontis in A phase downwards, and its submodule IGBT module mid point is upwards connected with DC bus positive pole; I-th submodule of brachium pontis in A phase, wherein the value of i is 2 ~ K-1, its submodule electric capacity C-
au-_inegative pole is connected with the i-th+1 sub-module I GBT module mid point of brachium pontis in A phase downwards, its submodule IGBT module mid point upwards with the i-th-1 sub-module capacitance C of brachium pontis in A phase
-au-_i-1negative pole is connected; K half-bridge submodule of brachium pontis in A phase, its submodule electric capacity C
-au-_Knegative pole is connected with K+1 sub-module I GBT module mid point of brachium pontis in A phase downwards, and its submodule IGBT module mid point is sub-module capacitance C-individual with the K-1 of brachium pontis in A phase upwards
au-_K-1negative pole is connected; A jth submodule of brachium pontis in A phase, wherein the value of j is K+2 ~ N-1, its submodule diode is connected with brachium pontis jth+1 sub-module I GBT module mid point in A phase downwards with IGBT module tie-point, and its submodule IGBT module mid point is upwards connected with IGBT module tie-point with-1 the submodule diode of brachium pontis jth in A phase; The N number of submodule of brachium pontis in A phase, its submodule diode and IGBT module tie-point are downwards through two brachium pontis reactor L
0be connected with the 1st sub-module I GBT module mid point of the lower brachium pontis of A phase, its submodule IGBT module mid point is upwards connected with IGBT module tie-point with N-1 submodule diode of brachium pontis in A phase; I-th submodule of the lower brachium pontis of A phase, wherein the value of i is 2 ~ K-1, its submodule electric capacity C-
al-_inegative pole downwards brachium pontis the i-th+1 sub-module I GBT module mid point lower to A phase is connected, and its IGBT module mid point is the lower sub-module capacitance C-of brachium pontis the i-th-1 with A phase upwards
al-_i-1negative pole is connected; K submodule of the lower brachium pontis of A phase, its submodule electric capacity C
-al_Knegative pole downwards brachium pontis K+1 sub-module I GBT module mid point lower to A phase is connected, and its submodule IGBT module mid point is lower brachium pontis K-1 the sub-module capacitance C-with A phase upwards
al-_K-1negative pole is connected; The lower brachium pontis jth submodule of A phase, wherein the value of j is K+2 ~ N-1, its submodule diode and IGBT module tie-point downwards brachium pontis jth+1 sub-module I GBT module mid point lower to A phase are connected, and its submodule IGBT module mid point upwards brachium pontis jth-1 submodule diode lower to A phase is connected with IGBT module tie-point; The lower N number of submodule diode of brachium pontis of A phase is connected with DC bus negative pole downwards with IGBT module tie-point, and its submodule IGBT module mid point is upwards connected with IGBT module tie-point with N-1 submodule diode of brachium pontis under A phase.B phase upper and lower bridge arm, in single clamp submodule, IGBT module connexon module capacitance positive pole, diode connexon module capacitance negative pole, the 1st submodule of upper brachium pontis, its submodule electric capacity C
-bu-_1positive pole is upwards connected with DC bus positive pole, its submodule IGBT module mid point downwards with the 2nd sub-module capacitance C of brachium pontis in B phase
-bu-_2positive pole is connected; I-th submodule of brachium pontis in B phase, wherein the value of i is 2 ~ K-1, its submodule electric capacity C-
bu-_ipositive pole is upwards connected with the i-th-1 sub-module I GBT module mid point of brachium pontis in B phase, its submodule IGBT module mid point downwards with the i-th+1 sub-module capacitance C-of brachium pontis in B phase
bu-_i+1positive pole is connected; K submodule of brachium pontis in B phase, its submodule electric capacity C-
bu-_Kpositive pole is upwards connected with K-1 sub-module I GBT module mid point of brachium pontis in B phase, and its submodule IGBT module mid point is connected with diode connection point with brachium pontis K+1 in B phase sub-module I GBT module downwards; A jth submodule of brachium pontis in B phase, wherein the value of j is K+2 ~ N-1, its submodule IGBT module and diode connection point are upwards connected with brachium pontis jth-1 sub-module I GBT module mid point in B phase, and its submodule IGBT module mid point is connected with diode connection point with the sub-module I GBT module of brachium pontis jth+1 in B phase downwards; The N number of submodule of brachium pontis in B phase, its submodule IGBT module and diode connection point are upwards connected with brachium pontis N-1 in B phase sub-module I GBT module mid point, and its submodule IGBT module mid point is downwards through two brachium pontis reactor L
0with the 1st sub-module capacitance C of the lower brachium pontis of B phase
-bl-_1positive pole is connected; I-th submodule of the lower brachium pontis of B phase, wherein the value of i is 2 ~ K-1, its submodule electric capacity C
-bl_ipositive pole upwards descends the i-th-1 sub-module I GBT module mid point of brachium pontis to be connected with B phase, and its submodule IGBT module mid point descends the i-th+1 sub-module capacitance C-of brachium pontis with B phase downwards
bl-_i+1positive pole is connected; K submodule of the lower brachium pontis of B phase, its submodule electric capacity C
-bl_Kpositive pole upwards brachium pontis K-1 sub-module I GBT module mid point lower to B phase is connected, and its submodule IGBT module mid point downwards brachium pontis K+1 sub-module I GBT module lower to B phase is connected with diode connection point; The lower brachium pontis jth submodule of B phase, wherein the value of j is K+2 ~ N-1, its submodule IGBT module and diode connection point upwards brachium pontis jth-1 sub-module I GBT module mid point lower to B phase are connected, and its submodule IGBT module mid point downwards brachium pontis jth+1 sub-module I GBT module lower to B phase is connected with diode connection point; The lower N number of submodule of brachium pontis of B phase, its submodule IGBT module and diode connection point upwards brachium pontis N-1 sub-module I GBT module mid point lower to B phase are connected, and its submodule IGBT module mid point is connected with DC bus negative pole downwards.The connected mode of C phase upper and lower bridge arm submodule is consistent with A.
From all pressing in subsidiary loop, auxiliary capacitor C
1positive pole connects auxiliary IGBT module T
1, negative pole connects clamp diode and is incorporated to DC bus positive pole; Auxiliary capacitor C
2negative pole connects auxiliary IGBT module T
2, positive pole connects clamp diode and is incorporated to DC bus negative pole.Clamp diode, by auxiliary switch K
au_121st sub-module capacitance C in brachium pontis in connection A phase
-au-_1with auxiliary capacitor C
1positive pole; By auxiliary switch K
au_i2, K
au_(i+1) 2i-th sub-module capacitance C in brachium pontis in connection A phase
-au-_iwith the i-th+1 sub-module capacitance C
-au-_i+1positive pole, wherein the value of i is 1 ~ K-1; By auxiliary switch K
au_K2, T
au_K+1k sub-module capacitance C in brachium pontis in connection A phase
-au-_Kwith K+1 sub-module capacitance C-
au_K+1positive pole; By auxiliary switch T
au_j, T
au_j+1a jth sub-module capacitance C in brachium pontis in connection A phase
-au-_jmodule capacitance C with jth+1
-au-_j+1positive pole, wherein the value of j is K+1 ~ N-1; By auxiliary switch T
au_N, K
al_12n number of submodule electric capacity C-in brachium pontis in connection A phase
au_Nbrachium pontis 1st sub-module capacitance C lower to A phase
-al-_1positive pole; By auxiliary switch K
al_i2, K
al_(i+1) 2connect i-th sub-module capacitance C in the lower brachium pontis of A phase
-al-_iwith the i-th+1 sub-module capacitance C
-al-_i+1positive pole, wherein the value of i is 1 ~ K-1; By auxiliary switch K
al_K2, T
al_K+1connect K sub-module capacitance C-in the lower brachium pontis of A phase
al-_Kwith K+1 sub-module capacitance C-
al-_K+1positive pole; By auxiliary switch T
al_j, T
al_j+1connect a jth sub-module capacitance C in the lower brachium pontis of A phase
-al_jmodule capacitance C with jth+1
-al-_j+1positive pole, wherein the value of j is K+1 ~ N-1; By auxiliary switch T
al_Nconnect N number of submodule electric capacity C in the lower brachium pontis of A phase
-al_Nwith auxiliary capacitor C
2positive pole.Clamp diode, by auxiliary switch K
bu_121st sub-module capacitance C in brachium pontis in connection B phase
-bu-_1with auxiliary capacitor C
1negative pole; By auxiliary switch K
bu_i2, K
bu_(i+1) 2i-th sub-module capacitance C-in brachium pontis in connection B phase
bu-_iwith the i-th+1 sub-module capacitance C-
bu-_i+1negative pole, wherein the value of i is 1 ~ K-1; By auxiliary switch K
bu_K2, T
bu_K+1k sub-module capacitance C-in brachium pontis in connection B phase
bu-_Kwith K+1 sub-module capacitance C-
bu-_K+1negative pole; By auxiliary switch T
bu_j, T
bu_j+1a jth sub-module capacitance C-in brachium pontis in connection B phase
bu-_jmodule capacitance C-with jth+1
bu-_j+1negative pole, wherein the value of j is K+1 ~ N-1; By auxiliary switch T
bu_N, K
bl_12n number of submodule electric capacity C-in brachium pontis in connection B phase
bu-_Nwith the 1st sub-module capacitance C-in the lower brachium pontis of B phase
bl_1negative pole; By auxiliary switch K
bl_i2, K
bl_(i+1) 2connect i-th sub-module capacitance C-in the lower brachium pontis of B phase
bl-_iwith the i-th+1 sub-module capacitance C-
bl-_i+1negative pole, wherein the value of i is 1 ~ K-1; By auxiliary switch K
bl_K2, T
bl_K+1connect K sub-module capacitance C-in the lower brachium pontis of B phase
bl_Kwith K+1 sub-module capacitance C-
bl-_K+1negative pole; By auxiliary switch T
bl_j, T
bl_j+1connect a jth sub-module capacitance C-in the lower brachium pontis of B phase
bl-_jmodule capacitance C-with jth+1
bl_j+1negative pole, wherein the value of j is K+1 ~ N-1; By auxiliary switch T
bl_Nconnect N number of submodule electric capacity C in the lower brachium pontis of B phase
-bl-_Nwith auxiliary capacitor C
2negative pole.The annexation of C phase clamp diode is consistent with A.
Under normal circumstances, from all pressing 6N auxiliary switch K in subsidiary loop
au_i2, K
al_i2, K
bu_i2, K
bl_i2, K
cu_i2, K
cl_i2, T
au_j, T
al_j, T
bu_j, T
bl_j, T
cu_j, T
cl_jnormally closed, wherein the value of i is the value of 1 ~ K, j is brachium pontis first sub-module capacitance C-in K+1 ~ N, A phase
au-_1during bypass, now auxiliary IGBT module T
1disconnect, submodule electric capacity C
-au-_1with auxiliary capacitor C
1in parallel by clamp diode; Brachium pontis i-th sub-module capacitance C-in A phase
au-_iduring bypass, wherein the value of i is 2 ~ N, submodule electric capacity C-
au-_iwith submodule electric capacity C-
au-_i-1in parallel by clamp diode; Lower brachium pontis first the sub-module capacitance C-of A phase
al_1during bypass, submodule electric capacity C-
al-_1by clamp diode, two brachium pontis reactor L
0with submodule electric capacity C-
au-_Nin parallel; Lower brachium pontis i-th the sub-module capacitance C-of A phase
al_iduring bypass, wherein the value of i is 2 ~ N, submodule electric capacity C-
al-_iwith submodule electric capacity C-
al_i-1in parallel by clamp diode; Auxiliary IGBT module T
2time closed, auxiliary capacitor C
2by clamp diode and submodule electric capacity C-
al_Nin parallel.
Under normal circumstances, from all pressing 6N auxiliary switch K in subsidiary loop
au_i2, K
al_i2, K
bu_i2, K
bl_i2, K
cu_i2, K
cl_i2, T
au_j, T
al_j, T
bu_j, T
bl_j, T
cu_j, T
cl_jnormally closed, wherein the value of i is the value of 1 ~ K, j is K+1 ~ N, auxiliary IGBT module T
1time closed, auxiliary capacitor C
1with submodule electric capacity C-
bu-_1in parallel by clamp diode; Brachium pontis i-th sub-module capacitance C-in B phase
bu-_iduring bypass, wherein the value of i is 1 ~ N-1, submodule electric capacity C-
bu-_iwith submodule electric capacity C-
bu-_i+1in parallel by clamp diode; The N number of submodule electric capacity C-of brachium pontis in B phase
bu_Nduring bypass, submodule electric capacity C
-bu-_Nby clamp diode, two brachium pontis reactor L
0with submodule electric capacity C-
bl-_1in parallel; Lower brachium pontis i-th the sub-module capacitance C-of B phase
bl_iduring bypass, wherein the value of i is 1 ~ N-1, submodule electric capacity C
-bl-_iwith submodule electric capacity C-
bl_i+1in parallel by clamp diode; The lower N number of submodule electric capacity C-of brachium pontis of B phase
bl_Nduring bypass, submodule electric capacity C-
bl-_Nwith auxiliary capacitor C-
2in parallel by clamp diode.Above-mentioned auxiliary IGBT module T
1triggering signal consistent with " the logic sum " of brachium pontis first submodule triggering signal in A, C phase; Auxiliary IGBT module T
2the triggering signal of the lower N number of submodule of brachium pontis of triggering signal and B phase consistent.
In the process of orthogonal stream energy conversion, each submodule alternately drops into, bypass, auxiliary IGBT module T
1, T
2be alternately closed, turn off, between A, B phase upper and lower bridge arm, capacitance voltage is under the effect of clamp diode, meets lower column constraint:
It can thus be appreciated that, at half-bridge/mono-clamp series-parallel connection MMC in the dynamic process completing the conversion of orthogonal stream energy, meet constraints below:
The constraints that C, B the are alternate constraints alternate with A, B is consistent.
Illustrated from above-mentioned, this half-bridge/mono-clamp series-parallel connection MMC topology possesses submodule capacitor voltage from the ability of equalization.
Finally should be noted that: described embodiment is only some embodiments of the present application, instead of whole embodiments.Based on the embodiment in the application, those of ordinary skill in the art are not making the every other embodiment obtained under creative work prerequisite, all belong to the scope of the application's protection.
Claims (6)
1. the centralized half-bridge of the auxiliary capacitor/mono-clamp series-parallel connection MMC based on equality constraint all presses topology certainly, it is characterized in that: comprise the half-bridge/mono-clamp series-parallel connection MMC model be made up of A, B, C three-phase, each brachium pontis of A, B, C three-phase is in series by K half-bridge submodule, N-K single clamp submodule and 1 brachium pontis reactor respectively; Comprise by 6N auxiliary switch (6K mechanical switch, 6N-6K IGBT module), 6N+5 clamp diode, 2 auxiliary capacitor C
1, C
2, 2 auxiliary IGBT module T
1, T
2what form all presses subsidiary loop certainly.
2. the centralized half-bridge of the auxiliary capacitor based on equality constraint according to right 1/mono-clamp series-parallel connection MMC is from all pressing topology, it is characterized in that: A phase upper and lower bridge arm, in single clamp submodule, the positive pole of diode connexon module capacitance, the negative pole of IGBT module connexon module capacitance; 1st submodule of brachium pontis in A phase, its submodule electric capacity C-
au-_1negative pole is connected with the 2nd sub-module I GBT module mid point of brachium pontis in A phase downwards, and its submodule IGBT module mid point is upwards connected with DC bus positive pole; I-th submodule of brachium pontis in A phase, wherein the value of i is 2 ~ K-1, its submodule electric capacity C-
au-_inegative pole is connected with the i-th+1 sub-module I GBT module mid point of brachium pontis in A phase downwards, its submodule IGBT module mid point upwards with the i-th-1 sub-module capacitance C of brachium pontis in A phase
-au-_i-1negative pole is connected; K half-bridge submodule of brachium pontis in A phase, its submodule electric capacity C
-au-_Knegative pole is connected with K+1 sub-module I GBT module mid point of brachium pontis in A phase downwards, and its submodule IGBT module mid point is sub-module capacitance C-individual with the K-1 of brachium pontis in A phase upwards
au-_K-1negative pole is connected; A jth submodule of brachium pontis in A phase, wherein the value of j is K+2 ~ N-1, its submodule diode is connected with brachium pontis jth+1 sub-module I GBT module mid point in A phase downwards with IGBT module tie-point, and its submodule IGBT module mid point is upwards connected with IGBT module tie-point with-1 the submodule diode of brachium pontis jth in A phase; The N number of submodule of brachium pontis in A phase, its submodule diode and IGBT module tie-point are downwards through two brachium pontis reactor L
0be connected with the 1st sub-module I GBT module mid point of the lower brachium pontis of A phase, its submodule IGBT module mid point is upwards connected with IGBT module tie-point with N-1 submodule diode of brachium pontis in A phase; I-th submodule of the lower brachium pontis of A phase, wherein the value of i is 2 ~ K-1, its submodule electric capacity C-
al-_inegative pole downwards brachium pontis the i-th+1 sub-module I GBT module mid point lower to A phase is connected, and its IGBT module mid point is the lower sub-module capacitance C-of brachium pontis the i-th-1 with A phase upwards
al-_i-1negative pole is connected; K submodule of the lower brachium pontis of A phase, its submodule electric capacity C
-al_Knegative pole downwards brachium pontis K+1 sub-module I GBT module mid point lower to A phase is connected, and its submodule IGBT module mid point is lower brachium pontis K-1 the sub-module capacitance C-with A phase upwards
al-_K-1negative pole is connected; The lower brachium pontis jth submodule of A phase, wherein the value of j is K+2 ~ N-1, its submodule diode and IGBT module tie-point downwards brachium pontis jth+1 sub-module I GBT module mid point lower to A phase are connected, and its submodule IGBT module mid point upwards brachium pontis jth-1 submodule diode lower to A phase is connected with IGBT module tie-point; The lower N number of submodule diode of brachium pontis of A phase is connected with DC bus negative pole downwards with IGBT module tie-point, and its submodule IGBT module mid point is upwards connected with IGBT module tie-point with N-1 submodule diode of brachium pontis under A phase; B phase upper and lower bridge arm, in single clamp submodule, IGBT module connexon module capacitance positive pole, diode connexon module capacitance negative pole, the 1st submodule of upper brachium pontis, its submodule electric capacity C
-bu-_1positive pole is upwards connected with DC bus positive pole, its submodule IGBT module mid point downwards with the 2nd sub-module capacitance C of brachium pontis in B phase
-bu-_2positive pole is connected; I-th submodule of brachium pontis in B phase, wherein the value of i is 2 ~ K-1, its submodule electric capacity C-
bu-_ipositive pole is upwards connected with the i-th-1 sub-module I GBT module mid point of brachium pontis in B phase, its submodule IGBT module mid point downwards with the i-th+1 sub-module capacitance C-of brachium pontis in B phase
bu-_i+1positive pole is connected; K submodule of brachium pontis in B phase, its submodule electric capacity C-
bu-_Kpositive pole is upwards connected with K-1 sub-module I GBT module mid point of brachium pontis in B phase, and its submodule IGBT module mid point is connected with diode connection point with brachium pontis K+1 in B phase sub-module I GBT module downwards; A jth submodule of brachium pontis in B phase, wherein the value of j is K+2 ~ N-1, its submodule IGBT module and diode connection point are upwards connected with brachium pontis jth-1 sub-module I GBT module mid point in B phase, and its submodule IGBT module mid point is connected with diode connection point with the sub-module I GBT module of brachium pontis jth+1 in B phase downwards; The N number of submodule of brachium pontis in B phase, its submodule IGBT module and diode connection point are upwards connected with brachium pontis N-1 in B phase sub-module I GBT module mid point, and its submodule IGBT module mid point is downwards through two brachium pontis reactor L
0with the 1st sub-module capacitance C of the lower brachium pontis of B phase
-bl-_1positive pole is connected; I-th submodule of the lower brachium pontis of B phase, wherein the value of i is 2 ~ K-1, its submodule electric capacity C
-bl_ipositive pole upwards descends the i-th-1 sub-module I GBT module mid point of brachium pontis to be connected with B phase, and its submodule IGBT module mid point descends the i-th+1 sub-module capacitance C-of brachium pontis with B phase downwards
bl-_i+1positive pole is connected; K submodule of the lower brachium pontis of B phase, its submodule electric capacity C
-bl_Kpositive pole upwards brachium pontis K-1 sub-module I GBT module mid point lower to B phase is connected, and its submodule IGBT module mid point downwards brachium pontis K+1 sub-module I GBT module lower to B phase is connected with diode connection point; The lower brachium pontis jth submodule of B phase, wherein the value of j is K+2 ~ N-1, its submodule IGBT module and diode connection point upwards brachium pontis jth-1 sub-module I GBT module mid point lower to B phase are connected, and its submodule IGBT module mid point downwards brachium pontis jth+1 sub-module I GBT module lower to B phase is connected with diode connection point; The lower N number of submodule of brachium pontis of B phase, its submodule IGBT module and diode connection point upwards brachium pontis N-1 sub-module I GBT module mid point lower to B phase are connected, and its submodule IGBT module mid point is connected with DC bus negative pole downwards; The connected mode of C phase upper and lower bridge arm submodule can be consistent with A, also can be consistent with B; Due to the existence of single clamp submodule, unnecessary configuration thyristor between the upper and lower output line of half-bridge submodule; Therefore A, B, C phase upper and lower bridge arm submodule be parallel with mechanical switch K between output line up and down
au_i1, K
al_i1, K
bu_i1, K
bl_i1, K
cu_i1, K
cl_i1, K
au_j, K
al_j, K
bu_j, K
bl_j, K
cu_j, K
cl_j, wherein the value of i is the value of 1 ~ K, j is K+1 ~ N; A, B, C three-phase status that above-mentioned annexation is formed is consistent, and other topologys after three-phase symmetrized in turn are in interest field.
3. the centralized half-bridge of the auxiliary capacitor based on equality constraint according to right 1/mono-clamp series-parallel connection MMC, from all pressing topology, is characterized in that: from all pressing in subsidiary loop, auxiliary capacitor C
1positive pole connects auxiliary IGBT module T
1, negative pole connects clamp diode and is incorporated to DC bus positive pole; Auxiliary capacitor C
2negative pole connects auxiliary IGBT module T
2, positive pole connects clamp diode and is incorporated to DC bus negative pole; Clamp diode, by auxiliary switch K
au_121st sub-module capacitance C in brachium pontis in connection A phase
-au-_1with auxiliary capacitor C
1positive pole; By auxiliary switch K
au_i2, K
au_(i+1) 2i-th sub-module capacitance C in brachium pontis in connection A phase
-au-_iwith the i-th+1 sub-module capacitance C
-au-_i+1positive pole, wherein the value of i is 1 ~ K-1; By auxiliary switch K
au_K2, T
au_K+1k sub-module capacitance C in brachium pontis in connection A phase
-au-_Kwith K+1 sub-module capacitance C-
au_K+1positive pole; By auxiliary switch T
au_j, T
au_j+1a jth sub-module capacitance C in brachium pontis in connection A phase
-au-_jmodule capacitance C with jth+1
-au-_j+1positive pole, wherein the value of j is K+1 ~ N-1; By auxiliary switch T
au_N, K
al_12n number of submodule electric capacity C-in brachium pontis in connection A phase
au_Nbrachium pontis 1st sub-module capacitance C lower to A phase
-al-_1positive pole; By auxiliary switch K
al_i2, K
al_(i+1) 2connect i-th sub-module capacitance C in the lower brachium pontis of A phase
-al-_iwith the i-th+1 sub-module capacitance C
-al-_i+1positive pole, wherein the value of i is 1 ~ K-1; By auxiliary switch K
al_K2, T
al_K+1connect K sub-module capacitance C-in the lower brachium pontis of A phase
al-_Kwith K+1 sub-module capacitance C-
al-_K+1positive pole; By auxiliary switch T
al_j, T
al_j+1connect a jth sub-module capacitance C in the lower brachium pontis of A phase
-al_jmodule capacitance C with jth+1
-al-_j+1positive pole, wherein the value of j is K+1 ~ N-1; By auxiliary switch T
al_Nconnect N number of submodule electric capacity C in the lower brachium pontis of A phase
-al_Nwith auxiliary capacitor C
2positive pole; Clamp diode, by auxiliary switch K
bu_121st sub-module capacitance C in brachium pontis in connection B phase
-bu-_1with auxiliary capacitor C
1negative pole; By auxiliary switch K
bu_i2, K
bu_(i+1) 2i-th sub-module capacitance C-in brachium pontis in connection B phase
bu-_iwith the i-th+1 sub-module capacitance C-
bu-_i+1negative pole, wherein the value of i is 1 ~ K-1; By auxiliary switch K
bu_K2, T
bu_K+1k sub-module capacitance C-in brachium pontis in connection B phase
bu-_Kwith K+1 sub-module capacitance C-
bu-_K+1negative pole; By auxiliary switch T
bu_j, T
bu_j+1a jth sub-module capacitance C-in brachium pontis in connection B phase
bu-_jmodule capacitance C-with jth+1
bu-_j+1negative pole, wherein the value of j is K+1 ~ N-1; By auxiliary switch T
bu_N, K
bl_12n number of submodule electric capacity C-in brachium pontis in connection B phase
bu-_Nwith the 1st sub-module capacitance C-in the lower brachium pontis of B phase
bl_1negative pole; By auxiliary switch K
bl_i2, K
bl_(i+1) 2connect i-th sub-module capacitance C-in the lower brachium pontis of B phase
bl-_iwith the i-th+1 sub-module capacitance C-
bl-_i+1negative pole, wherein the value of i is 1 ~ K-1; By auxiliary switch K
bl_K2, T
bl_K+1connect K sub-module capacitance C-in the lower brachium pontis of B phase
bl_Kwith K+1 sub-module capacitance C-
bl-_K+1negative pole; By auxiliary switch T
bl_j, T
bl_j+1connect a jth sub-module capacitance C-in the lower brachium pontis of B phase
bl-_jmodule capacitance C-with jth+1
bl_j+1negative pole, wherein the value of j is K+1 ~ N-1; By auxiliary switch T
bl_Nconnect N number of submodule electric capacity C in the lower brachium pontis of B phase
-bl-_Nwith auxiliary capacitor C
2negative pole; The annexation of C phase clamp diode is corresponding with the annexation of its submodule; 6N auxiliary switch K in above-mentioned A, B, C three-phase
au_i2, K
al_i2, K
bu_i2, K
bl_i2, K
cu_i2, K
cl_i2, T
au_j, T
al_j, T
bu_j, T
bl_j, T
cu_j, T
cl_j, wherein the value of i is the value of 1 ~ K, j is K+1 ~ N, 6N+5 clamp diode, 2 auxiliary capacitor C
1, C
2and 2 auxiliary IGBT module T
1, T
2, common formation is from all pressing subsidiary loop.
4. the centralized half-bridge of the auxiliary capacitor based on equality constraint according to right 1/mono-clamp series-parallel connection MMC, from all pressing topology, is characterized in that: during normal condition, from all pressing 6N auxiliary switch K in subsidiary loop
au_i2, K
al_i2, K
bu_i2, K
bl_i2, K
cu_i2, K
cl_i2, T
au_j, T
al_j, T
bu_j, T
bl_j, T
cu_j, T
cl_jnormally closed, wherein the value of i is the value of 1 ~ K, j is K+1 ~ N; During failure condition, 6N-6K auxiliary switch T
au_j, T
al_j, T
bu_j, T
bl_j, T
cu_j, T
cl_jdisconnect, wherein the value of j is K+1 ~ N; Under normal circumstances, brachium pontis first sub-module capacitance C-in A phase
au-_1during bypass, now auxiliary IGBT module T
1disconnect, submodule electric capacity C
-au-_1with auxiliary capacitor C
1in parallel by clamp diode; Brachium pontis i-th sub-module capacitance C-in A phase
au-_iduring bypass, wherein the value of i is 2 ~ N, submodule electric capacity C-
au-_iwith submodule electric capacity C-
au-_i-1in parallel by clamp diode; Lower brachium pontis first the sub-module capacitance C-of A phase
al_1during bypass, submodule electric capacity C-
al-_1by clamp diode, two brachium pontis reactor L
0with submodule electric capacity C-
au-_Nin parallel; Lower brachium pontis i-th the sub-module capacitance C-of A phase
al_iduring bypass, wherein the value of i is 2 ~ N, submodule electric capacity C-
al-_iwith submodule electric capacity C-
al_i-1in parallel by clamp diode; Auxiliary IGBT module T
2time closed, auxiliary capacitor C
2by clamp diode and submodule electric capacity C-
al_Nin parallel; Auxiliary IGBT module T
1time closed, auxiliary capacitor C
1with submodule electric capacity C-
bu-_1in parallel by clamp diode; Brachium pontis i-th sub-module capacitance C-in B phase
bu-_iduring bypass, wherein the value of i is 1 ~ N-1, submodule electric capacity C-
bu-_iwith submodule electric capacity C-
bu-_i+1in parallel by clamp diode; The N number of submodule electric capacity C-of brachium pontis in B phase
bu_Nduring bypass, submodule electric capacity C
-bu-_Nby clamp diode, two brachium pontis reactor L
0with submodule electric capacity C-
bl-_1in parallel; Lower brachium pontis i-th the sub-module capacitance C-of B phase
bl_iduring bypass, wherein the value of i is 1 ~ N-1, submodule electric capacity C
-bl-_iwith submodule electric capacity C-
bl_i+1in parallel by clamp diode; The lower N number of submodule electric capacity C-of brachium pontis of B phase
bl_Nduring bypass, submodule electric capacity C-
bl-_Nwith auxiliary capacitor C-
2in parallel by clamp diode; Wherein auxiliary IGBT module T
1triggering signal consistent with " the logic sum " of brachium pontis first submodule triggering signal in A, C phase; Auxiliary IGBT module T
2the triggering signal of the lower N number of submodule of brachium pontis of triggering signal and B phase consistent; In the process of orthogonal stream energy conversion, each submodule alternately drops into, bypass, auxiliary IGBT module T
1, T
2be alternately closed, turn off, A phase upper and lower bridge arm submodule capacitor voltage, under the effect of clamp diode, meets lower column constraint, U
c1>=U
c-au_1>=U
c-au_2>=U
c-au_N>=U
c-al_1>=U
c-al_2>=U
c-al_N>=U
c2; B phase upper and lower bridge arm submodule capacitor voltage, under the effect of clamp diode, meets lower column constraint, U
c1≤ U
c-bu_1≤ U
c-bu_2≤ U
c-bu_N≤ U
c-bl_1≤ U
c-bl_2≤ U
c-bl_N≤ U
c2; The centralized half-bridge of auxiliary capacitor based on equality constraint/mono-clamp series-parallel connection MMC all presses topology certainly, in dynamic process, and auxiliary capacitor C
1both can as the highest electric capacity of A phase voltage, again can as the minimum electric capacity of B phase voltage; Auxiliary capacitor C
2both can as the minimum electric capacity of A phase voltage, again can as the highest electric capacity of B phase voltage; Against two equality constraints, max(U
ca-)=min(U
cb-), min(U
ca)=max(U
cb), 4N sub-module capacitance in A, B phase upper and lower bridge arm, C
au_i, C
al_i, C
bu_i, C
bl_i, wherein i value is 1 ~ N, and auxiliary capacitor C
1, C
2, voltage be in self-balancing state, topological A, B are alternate possesses submodule capacitor voltage from the ability of equalization; If the form of the composition of C phase is consistent with A in topology, then the constraints of C, B capacitive coupling voltage is consistent with capacitance voltage constraints between A, B; If the form of the composition of C phase is consistent with B in topology, then the constraints of A, C capacitive coupling voltage is consistent with capacitance voltage constraints between A, B, and topology possesses submodule capacitor voltage from the ability of equalization; Realize utilizing clamp diode, on the basis of the single-phase flowing of capacitive energy between adjacent submodule mutually, relying on the equality constraint max(U between auxiliary capacitor voltage
ca-)=min(U
cb-), min(U
ca)=max(U
cb), or max(U
ca-)=min(U
cc), min(U
ca)=max(U
cc), or max(U
cc)=min(U
cb-), min(U
cc)=max(U
cb), the alternate flowing realizing capacitive energy forms the peripheral passage of capacitive energy, and then keeps alternate submodule capacitor voltage to stablize, and is the protection content of this right.
5. the centralized half-bridge of the auxiliary capacitor based on equality constraint according to right 1/mono-clamp series-parallel connection MMC, from all pressing topology, is characterized in that: auxiliary capacitor C
1, C
2both as the passage of A, B capacitive coupling energy exchange, again as the passage of B, C capacitive coupling energy exchange; Function focus utilization in topology of auxiliary capacitor all presses the device consumption in subsidiary loop certainly with minimizing; Auxiliary capacitor C
1function concentrate, auxiliary capacitor C
2function do not concentrate; Auxiliary capacitor C
1function do not concentrate, auxiliary capacitor C
2function concentrate topology in interest field.
6. the centralized half-bridge of the auxiliary capacitor based on equality constraint according to right 1/mono-clamp series-parallel connection MMC is from all pressing topology, it is characterized in that: the centralized half-bridge of the auxiliary capacitor based on equality constraint/mono-clamp series-parallel connection MMC is from all pressing topology, flexible direct-current transmission field can not only be directly applied to as multi-level voltage source current converter, also by forming STATCOM (STATCOM), Research on Unified Power Quality Conditioner (UPQC), the application of installations such as THE UPFC (UPFC) are in flexible AC transmission field; Other application scenarios of this invention topology of indirect utilization and thought are in interest field.
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