CN205754044U - The centralized half-bridge of auxiliary capacitor based on equality constraint/full-bridge series-parallel connection MMC is from all pressing topology - Google Patents
The centralized half-bridge of auxiliary capacitor based on equality constraint/full-bridge series-parallel connection MMC is from all pressing topology Download PDFInfo
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Abstract
This utility model provides the centralized half-bridge of auxiliary capacitor based on equality constraint/full-bridge series-parallel connection MMC from all pressing topology.Half-bridge/full-bridge series-parallel connection MMC is in all pressure topologys, half-bridge/full-bridge series-parallel connection MMC model and the auxiliary switch generation electrical link in all pressure subsidiary loop is by subsidiary loop, auxiliary switch closes, both constitute the centralized half-bridge of auxiliary capacitor based on equality constraint/full-bridge series-parallel connection MMC from all pressing topology, auxiliary switch is opened, and topoligical equivalence is half-bridge/full-bridge series-parallel connection MMC topology.In the case of not emphasizing two kinds of topological variations, 6 in auxiliary switchKIndividual mechanical switch can omit.This half-bridge/full-bridge series-parallel connection MMC is from all pressing topology, there is DC Line Fault clamping ability, do not rely on special Pressure and Control, can be on the basis of completing the conversion of orthogonal stream energy, spontaneously realize the equilibrium of submodule capacitor voltage, submodule can be reduced simultaneously accordingly and trigger frequency and capacitor's capacity, it is achieved the fundamental frequency modulation of MMC.
Description
Technical field
This utility model relates to flexible transmission field, is specifically related to a kind of centralized half-bridge of auxiliary capacitor based on equality constraint/full-bridge series-parallel connection MMC from all pressing topology.
Background technology
Modularization multi-level converter MMC is the developing direction of following HVDC Transmission Technology, MMC uses submodule (Sub-module, SM) mode cascaded constructs converter valve, avoid the direct series connection of big metering device, reduce requirement conforming to device, simultaneously facilitate dilatation and redundant configuration.Along with the rising of level number, output waveform, close to sinusoidal, can effectively avoid the defect of low level VSC-HVDC.
Half-bridge/full-bridge series-parallel connection MMC is combined by half-bridge and full-bridge submodule, and half-bridge sub modular structure is simple, and low cost, running wastage is little, and full-bridge submodule has DC Line Fault clamping ability.
Different from two level, three level VSC, the DC voltage of MMC is not supported by a bulky capacitor, but is supported by a series of separate suspension submodule capacitances in series.In order to ensure that the waveform quality that AC voltage exports bears identical stress with each power semiconductor in guarantee module, also for preferably supporting DC voltage, reduce alternate circulation, it is necessary to assure submodule capacitor voltage is in the state of dynamic stability at the periodic current disorder of internal organs of brachium pontis power.
Sequence based on capacitance voltage sequence all presses algorithm to be the main flow thinking solving MMC Neutron module capacitance voltage equalization problem at present, but is also constantly expose its some inherent shortcomings.First, the realization of ranking function has to rely on the Millisecond sampling of capacitance voltage, needs substantial amounts of sensor and optical-fibre channel to be coordinated;Secondly, when group number of modules increases, the operand of capacitance voltage sequence increases rapidly, and the hardware designs for controller brings huge challenge;Additionally, submodule is cut-off frequency and has the highest requirement by sequence all realizations of pressure algorithm, cut-off frequency and be closely related with all pressure effects, in practice process, probably due to all press the restriction of effect, it has to improve the triggering frequency of submodule, and then bring the increase that inverter is lost.
Document " A DC-Link Voltage
Self-Balance Method for a Diode-Clamped Modular Multilevel Converter With
Minimum Number of Voltage Sensors ", it is proposed that a kind of rely on clamp diode and transformator to realize MMC submodule capacitor voltage equilibrium thinking.But the program the most to a certain degree destroys the modular nature of submodule, submodule capacitive energy interchange channel is also confined in mutually, could not make full use of the existing structure of MMC, introducing of three transformators also brings along bigger improvement cost while making control strategy complicate.
Utility model content
For the problems referred to above, the purpose of this utility model is to propose a kind of economy, modular, it is independent of all pressing algorithm, submodule can be reduced simultaneously accordingly and trigger frequency and capacitor's capacity and there is the half-bridge/full-bridge series-parallel connection MMC of DC Line Fault clamping ability from all pressing topology.
The concrete constituted mode of this utility model is as follows.
The centralized half-bridge of auxiliary capacitor based on equality constraint/full-bridge series-parallel connection MMC is from all pressing topology, including the half-bridge MMC model being made up of A, B, C three-phase, each brachium pontis of A, B, C three-phase respectively byKIndividual half-bridge submodule,N-KIndividual full-bridge submodule and 1 brachium pontis reactor are in series;Including by 6NIndividual auxiliary switch (6KIndividual mechanical switch, 6N-6KIndividual IGBT module), 6N+ 5 clamp diodes, 2 auxiliary capacitors, 2 auxiliary IGBT module compositions from the most all pressing subsidiary loop.
The above-mentioned centralized half-bridge of auxiliary capacitor based on equality constraint/full-bridge series-parallel connection MMC is from all pressing topology, 1st submodule of brachium pontis in A phase, its submodule electric capacity negative pole is connected with the 2nd of brachium pontis module I GBT module midpoint in A phase downwards, and its submodule IGBT module midpoint is upwards connected with dc bus positive pole;In A phase the of brachium pontisiIndividual submodule, whereiniValue be 2~K-1, its submodule electric capacity negative pole is downwards with in A phase the of brachium pontisi+ 1 sub-module I GBT module midpoint is connected, and its submodule IGBT module midpoint is upwards with in A phase the of brachium pontisi-1 sub-module capacitance negative pole is connected;In A phase the of brachium pontisKIndividual half-bridge submodule, its submodule electric capacity negative pole is downwards with in A phase the of brachium pontisKOne IGBT module midpoint of+1 submodule is connected, and its submodule IGBT module midpoint is upwards with in A phase the of brachium pontisK-1 sub-module capacitance negative pole is connected;In A phase the of brachium pontisjIndividual submodule, whereinjValue beK+ 2~N-1, one IGBT module midpoint of its submodule downwards with brachium pontis in A phase thejOne IGBT module midpoint of+1 submodule is connected, another IGBT module midpoint upwards with brachium pontis in A phasejOne IGBT module midpoint of-1 submodule is connected;Brachium pontis in A phaseNIndividual submodule, one IGBT module midpoint of its submodule is down through two brachium pontis reactorsL 01st sub-module I GBT module midpoint of brachium pontis lower with A phase is connected, and another IGBT module midpoint is upwards with in A phase the of brachium pontisNOne IGBT module midpoint of-1 submodule is connected;The of the lower brachium pontis of A phaseiIndividual submodule, whereiniValue be 2~K-1, its submodule electric capacity negative pole downwards with A phase time brachium pontis thei+ 1 sub-module I GBT module midpoint is connected, its IGBT module midpoint upwards brachium pontis lower with A phase thei-1 sub-module capacitance negative pole is connected;The of the lower brachium pontis of A phaseKIndividual submodule, its submodule electric capacity negative pole downwards with A phase time brachium pontis theKOne IGBT module midpoint of+1 submodule is connected, its submodule IGBT module midpoint upwards brachium pontis lower with A phase theK-1 sub-module capacitance negative pole is connected;The lower brachium pontis of A phase thejIndividual submodule, whereinjValue beK+ 2~N-1, one IGBT module midpoint of its submodule downwards with A phase time brachium pontis thejOne IGBT module midpoint of+1 submodule is connected, another IGBT module midpoint upwards brachium pontis lower with A phase thejOne IGBT module midpoint of-1 submodule is connected;The lower brachium pontis of A phase theNOne IGBT module midpoint of individual submodule is connected with dc bus negative pole downwards, the of another IGBT module midpoint upwards brachium pontis lower with A phaseNOne IGBT module midpoint of-1 submodule is connected.1st submodule of brachium pontis in B phase, its submodule capacitance cathode is upwards connected with dc bus positive pole, and its submodule IGBT module midpoint is connected with the 2nd sub-module capacitance positive pole of brachium pontis in B phase downwards;In B phase the of brachium pontisiIndividual submodule, whereiniValue be 2~K-1, its submodule capacitance cathode is upwards with in B phase the of brachium pontisi-1 sub-module I GBT module midpoint is connected, and its submodule IGBT module midpoint is downwards with in B phase the of brachium pontisi+ 1 sub-module capacitance positive pole is connected;In B phase the of brachium pontisKIndividual submodule, its submodule capacitance cathode is upwards with in B phase the of brachium pontisK-1 sub-module I GBT module midpoint is connected, its submodule IGBT module midpoint downwards with brachium pontis in B phase theKOne IGBT module midpoint of+1 submodule is connected;In B phase the of brachium pontisjIndividual submodule, whereinjValue beK+ 2~N-1, one IGBT module midpoint of its submodule upwards with brachium pontis in B phasejOne IGBT module midpoint of-1 submodule is connected, another IGBT module midpoint downwards with brachium pontis in B phase thejOne IGBT module midpoint of+1 submodule is connected;Brachium pontis in B phaseNIndividual submodule, one IGBT module midpoint of its submodule upwards with brachium pontis in B phaseNOne IGBT module midpoint of-1 submodule is connected, and another IGBT module midpoint is down through two brachium pontis reactorsL 01st sub-module capacitance positive pole of brachium pontis lower with B phase is connected;The of the lower brachium pontis of B phaseiIndividual submodule, whereiniValue be 2~K-1, the of its submodule capacitance cathode upwards brachium pontis lower with B phasei-1 sub-module I GBT module midpoint is connected, its submodule IGBT module midpoint downwards with the of B phase time brachium pontisi+ 1 sub-module capacitance positive pole is connected;The of the lower brachium pontis of B phaseKIndividual submodule, its submodule capacitance cathode upwards brachium pontis lower with B phase theK-1 sub-module I GBT module midpoint is connected, its submodule IGBT module midpoint downwards with B phase time brachium pontis theKOne IGBT module midpoint of+1 submodule is connected;The lower brachium pontis of B phase thejIndividual submodule, whereinjValue beK+ 2~N-1, one IGBT module midpoint of its submodule upwards brachium pontis lower with B phase thejOne IGBT module midpoint of-1 submodule is connected, another IGBT module midpoint downwards with B phase time brachium pontis thejOne IGBT module midpoint of+1 submodule is connected;The lower brachium pontis of B phase theNIndividual submodule, one IGBT module midpoint of its submodule upwards brachium pontis lower with B phase theNOne IGBT module midpoint of-1 submodule is connected, and another IGBT module midpoint is connected with dc bus negative pole downwards.The connected mode of C phase upper and lower bridge arm submodule is consistent with A phase or B.
From all pressing in subsidiary loop, first auxiliary capacitor positive pole connects auxiliary IGBT module negative pole connection clamp diode and is incorporated to dc bus positive pole;Second auxiliary capacitor negative pole connects auxiliary IGBT module positive pole connection clamp diode and is incorporated to dc bus negative pole.Clamp diode, by the 1st sub-module capacitance and first auxiliary capacitor positive pole in brachium pontis in auxiliary switch connection A phase;The is connected in A phase in brachium pontis by auxiliary switchiIndividual sub-module capacitance and thei+ 1 sub-module capacitance positive pole, whereiniValue be 1~N-1;The is connected in A phase in brachium pontis by auxiliary switchNIndividual sub-module capacitance brachium pontis 1st sub-module capacitance positive pole lower with A phase;The is connected in the lower brachium pontis of A phase by auxiliary switchiThe lower brachium pontis of individual sub-module capacitance and A phase thei+ 1 sub-module capacitance positive pole, whereiniValue be 1~N-1;The is connected in the lower brachium pontis of A phase by auxiliary switchNIndividual sub-module capacitance and second auxiliary capacitor positive pole.Clamp diode, by the 1st sub-module capacitance and the negative pole of first auxiliary capacitor in brachium pontis in auxiliary switch connection B phase;The is connected in B phase in brachium pontis by auxiliary switchiIndividual sub-module capacitance and theiThe negative pole of+1 sub-module capacitance, whereiniValue be 1~N-1;The is connected in B phase in brachium pontis by auxiliary switchNThe negative pole of individual sub-module capacitance brachium pontis 1st sub-module capacitance lower with B phase;The is connected in the lower brachium pontis of B phase by auxiliary switchiThe lower brachium pontis of individual sub-module capacitance and B phase theiThe negative pole of+1 sub-module capacitance, whereiniValue be 1~N-1;The is connected in the lower brachium pontis of B phase by auxiliary switchNIndividual sub-module capacitance and the negative pole of second auxiliary capacitor.The annexation of C phase clamp diode is corresponding with the annexation of its submodule.
Accompanying drawing explanation
Below in conjunction with the accompanying drawings this utility model is further illustrated.
Fig. 1 is the structural representation of half-bridge submodule;
Fig. 2 is the structural representation of full-bridge submodule;
Fig. 3 is that the centralized half-bridge of auxiliary capacitor based on equality constraint/full-bridge series-parallel connection MMC is from all pressing topology.
Detailed description of the invention
For of the present utility model performance and operation principle are expanded on further, below in conjunction with accompanying drawing, the constituted mode of utility model is specifically described with operation principle.But half-bridge based on this principle/full-bridge series-parallel connection MMC is not limited to Fig. 3 from all pressure topologys.
With reference to Fig. 3, the centralized half-bridge of auxiliary capacitor based on equality constraint/full-bridge series-parallel connection MMC from all pressing topology, including the half-bridge being made up of A, B, C three-phase/full-bridge series-parallel connection MMC model, each brachium pontis of A, B, C three-phase respectively byKIndividual half-bridge submodule,N-KIndividual full-bridge submodule and 1 brachium pontis reactor are in series;Including by 6NIndividual auxiliary switch (6KIndividual mechanical switch, 6N-6KIndividual IGBT module), 6N+ 5 clamp diodes, 2 auxiliary capacitors, 2 auxiliary IGBT module compositions from the most all pressing subsidiary loop.
In half-bridge/full-bridge series-parallel connection MMC model, the 1st submodule of brachium pontis, its submodule electric capacity in A phaseCau_1Negative pole is connected with the 2nd of brachium pontis module I GBT module midpoint in A phase downwards, and its submodule IGBT module midpoint is upwards connected with dc bus positive pole;In A phase the of brachium pontisiIndividual submodule, whereiniValue be 2~K-1, its submodule electric capacityCau_i Negative pole is downwards with in A phase the of brachium pontisi+ 1 sub-module I GBT module midpoint is connected, and its submodule IGBT module midpoint is upwards with in A phase the of brachium pontisi-1 sub-module capacitanceC au_i-1Negative pole is connected;In A phase the of brachium pontisKIndividual half-bridge submodule, its submodule electric capacityC au_K Negative pole is downwards with in A phase the of brachium pontisKOne IGBT module midpoint of+1 submodule is connected, and its submodule IGBT module midpoint is upwards with in A phase the of brachium pontisK-1 sub-module capacitanceCau_K-1Negative pole is connected;In A phase the of brachium pontisjIndividual submodule, whereinjValue beK+ 2~N-1, one IGBT module midpoint of its submodule downwards with brachium pontis in A phase thejOne IGBT module midpoint of+1 submodule is connected, another IGBT module midpoint upwards with brachium pontis in A phasejOne IGBT module midpoint of-1 submodule is connected;Brachium pontis in A phaseNIndividual submodule, one IGBT module midpoint of its submodule is down through two brachium pontis reactorsL 01st sub-module I GBT module midpoint of brachium pontis lower with A phase is connected, and another IGBT module midpoint is upwards with in A phase the of brachium pontisNOne IGBT module midpoint of-1 submodule is connected;The of the lower brachium pontis of A phaseiIndividual submodule, whereiniValue be 2~K-1, its submodule electric capacityCal_i Negative pole downwards with A phase time brachium pontis thei+ 1 sub-module I GBT module midpoint is connected, its IGBT module midpoint upwards brachium pontis lower with A phase thei-1 sub-module capacitanceC al_i-1Negative pole is connected;The of the lower brachium pontis of A phaseKIndividual submodule, its submodule electric capacityC al_K Negative pole downwards with A phase time brachium pontis theKOne IGBT module midpoint of+1 submodule is connected, its submodule IGBT module midpoint upwards brachium pontis lower with A phase theK-1 sub-module capacitanceCal_K-1Negative pole is connected;The lower brachium pontis of A phase thejIndividual submodule, whereinjValue beK+ 2~N-1, one IGBT module midpoint of its submodule downwards with A phase time brachium pontis thejOne IGBT module midpoint of+1 submodule is connected, another IGBT module midpoint upwards brachium pontis lower with A phase thejOne IGBT module midpoint of-1 submodule is connected;The lower brachium pontis of A phase theNOne IGBT module midpoint of individual submodule is connected with dc bus negative pole downwards, the of another IGBT module midpoint upwards brachium pontis lower with A phaseNOne IGBT module midpoint of-1 submodule is connected.1st submodule of brachium pontis, its submodule electric capacity in B phaseC bu_1Positive pole is upwards connected with dc bus positive pole, its submodule IGBT module midpoint downwards with the 2nd sub-module capacitance of brachium pontis in B phaseC bu_2Positive pole is connected;In B phase the of brachium pontisiIndividual submodule, whereiniValue be 2~K-1, its submodule electric capacityCbu_i Positive pole is upwards with in B phase the of brachium pontisi-1 sub-module I GBT module midpoint is connected, and its submodule IGBT module midpoint is downwards with in B phase the of brachium pontisi+ 1 sub-module capacitanceCbu_i+1Positive pole is connected;In B phase the of brachium pontisKIndividual submodule, its submodule electric capacityCbu_K Positive pole is upwards with in B phase the of brachium pontisK-1 sub-module I GBT module midpoint is connected, its submodule IGBT module midpoint downwards with brachium pontis in B phase theKOne IGBT module midpoint of+1 submodule is connected;In B phase the of brachium pontisjIndividual submodule, whereinjValue beK+ 2~N-1, one IGBT module midpoint of its submodule upwards with brachium pontis in B phasejOne IGBT module midpoint of-1 submodule is connected, another IGBT module midpoint downwards with brachium pontis in B phase thejOne IGBT module midpoint of+1 submodule is connected;Brachium pontis in B phaseNIndividual submodule, one IGBT module midpoint upwards with brachium pontis in B phaseNOne IGBT module midpoint of-1 submodule is connected, and another IGBT module midpoint is down through two brachium pontis reactorsL 01st sub-module capacitance of brachium pontis lower with B phaseC bl_1Positive pole is connected;The of the lower brachium pontis of B phaseiIndividual submodule, whereiniValue be 2~K-1, its submodule electric capacityC bl_i The of positive pole upwards brachium pontis lower with B phasei-1 sub-module I GBT module midpoint is connected, its submodule IGBT module midpoint downwards with the of B phase time brachium pontisi+ 1 sub-module capacitanceC bl_i+1Positive pole is connected;The of the lower brachium pontis of B phaseKIndividual submodule, its submodule electric capacityC bl_K Positive pole upwards brachium pontis lower with B phase theK-1 sub-module I GBT module midpoint is connected, its submodule IGBT module midpoint downwards with B phase time brachium pontis theKOne IGBT module midpoint of+1 submodule is connected;The lower brachium pontis of B phase thejIndividual submodule, whereinjValue beK+ 2~N-1, one IGBT module midpoint upwards brachium pontis lower with B phase thejOne IGBT module midpoint of-1 submodule is connected, another IGBT module midpoint downwards with B phase time brachium pontis thejMono-IGBT module midpoint of+1 sub-module I GBT is connected;The lower brachium pontis of B phase theNIndividual submodule, one IGBT module midpoint of its submodule upwards brachium pontis lower with B phase theNOne IGBT module midpoint of-1 submodule is connected, and another IGBT module midpoint is connected with dc bus negative pole downwards.The connected mode of C phase upper and lower bridge arm submodule is consistent with A.
From all pressing in subsidiary loop, auxiliary capacitorC 1Positive pole connects auxiliary IGBT moduleT 1, negative pole connects clamp diode and is incorporated to dc bus positive pole;Auxiliary capacitorC 2Negative pole connects auxiliary IGBT moduleT 2, positive pole connects clamp diode and is incorporated to dc bus negative pole.Clamp diode, passes through auxiliary switchK au_121st sub-module capacitance in brachium pontis in connection A phaseC au_1With auxiliary capacitorC 1Positive pole;Pass through auxiliary switchK au_i2、K au_ ( i +1 ) 2Connect in A phase in brachium pontis theiIndividual sub-module capacitanceC au_i Withi+ 1 sub-module capacitanceC au_i+1Positive pole, whereiniValue be 1~K-1;Pass through auxiliary switchK au_K2、T au_K+1Connect in A phase in brachium pontis theKIndividual sub-module capacitanceC au_K WithK+ 1 sub-module capacitanceC au_K+1Positive pole;Pass through auxiliary switchT au_j 、T au_j+1Connect in A phase in brachium pontis thejIndividual sub-module capacitanceC au_j Withj+ 1 sub-module capacitanceC au_j+1Positive pole, whereinjValue beK+ 1~N-1;Pass through auxiliary switchT au_N 、K al_12Connect in A phase in brachium pontis theNIndividual sub-module capacitanceCau_N Brachium pontis 1st sub-module capacitance lower with A phaseC al_1Positive pole;Pass through auxiliary switchK al_i2、K al_ ( i +1 ) 2Connect in the lower brachium pontis of A phase theiIndividual sub-module capacitanceC al_i Withi+ 1 sub-module capacitanceC al_i+1Positive pole, whereiniValue be 1~K-1;Pass through auxiliary switchK al_K2、T al_K+1Connect in the lower brachium pontis of A phase theKIndividual sub-module capacitanceCal_K WithK+ 1 sub-module capacitanceCal_K+1Positive pole;Pass through auxiliary switchT al_j 、T al_j+1Connect in the lower brachium pontis of A phase thejIndividual sub-module capacitanceC al_j Withj+ 1 sub-module capacitanceC al_j+1Positive pole, whereinjValue beK+ 1~N-1;Pass through auxiliary switchT al_N Connect in the lower brachium pontis of A phase theNIndividual sub-module capacitanceC al_N With auxiliary capacitorC 2Positive pole.Clamp diode, passes through auxiliary switchK bu_121st sub-module capacitance in brachium pontis in connection B phaseC bu_1With auxiliary capacitorC 1Negative pole;Pass through auxiliary switchK bu_i2、K bu_ ( i +1 ) 2Connect in B phase in brachium pontis theiIndividual sub-module capacitanceCbu_i Withi+ 1 sub-module capacitanceCbu_i+1Negative pole, whereiniValue be 1~K-1;Pass through auxiliary switchK bu_K2、T bu_K+1Connect in B phase in brachium pontis theKIndividual sub-module capacitanceCbu_K WithK+ 1 sub-module capacitanceCbu_K+1Negative pole;Pass through auxiliary switchT bu_j 、T bu_j+1Connect in B phase in brachium pontis thejIndividual sub-module capacitanceCbu_j Withj+ 1 sub-module capacitanceCbu_j+1Negative pole, whereinjValue beK+ 1~N-1;Pass through auxiliary switchT bu_N 、K bl_12Connect in B phase in brachium pontis theNIndividual sub-module capacitanceCbu_N 1st sub-module capacitance in brachium pontis lower with B phaseCbl_1Negative pole;Pass through auxiliary switchK bl_i2、K bl_ ( i +1 ) 2Connect in the lower brachium pontis of B phase theiIndividual sub-module capacitanceCbl_i Withi+ 1 sub-module capacitanceCbl_i+1Negative pole, whereiniValue be 1~K-1;Pass through auxiliary switchK bl_K2、T bl_K+1Connect in the lower brachium pontis of B phase theKIndividual sub-module capacitanceCbl_K WithK+ 1 sub-module capacitanceCbl_K+1Negative pole;Pass through auxiliary switchT bl_j 、T bl_j+1Connect in the lower brachium pontis of B phase thejIndividual sub-module capacitanceCbl_j Withj+ 1 sub-module capacitanceCbl_j+1Negative pole, whereinjValue beK+ 1~N-1;Pass through auxiliary switchT bl_N Connect in the lower brachium pontis of B phase theNIndividual sub-module capacitanceC bl_N With auxiliary capacitorC 2Negative pole.The annexation of C phase clamp diode is consistent with A.
Under normal circumstances, from the most all pressure subsidiary loop in 6NIndividual auxiliary switchK au_i2、K al_i2、K bu_i2、K bl_i2、K cu_i2、K cl_i2、T au_j 、T al_j 、T bu_j 、T bl_j 、T cu_j 、T cl_j Normally closed, whereiniValue be 1~K,jValue beK+ 1~N, first sub-module capacitance of brachium pontis in A phaseCau_1During bypass, now assist IGBT moduleT 1Disconnect, submodule electric capacityC au_1With auxiliary capacitorC 1In parallel by clamp diode;Brachium pontis in A phaseiIndividual sub-module capacitanceCau_i During bypass, whereiniValue be 2~N, submodule electric capacityCau_i With submodule electric capacityCau_i-1In parallel by clamp diode;Lower first the sub-module capacitance of brachium pontis of A phaseCal_1During bypass, submodule electric capacityCal_1By clamp diode, two brachium pontis reactorsL 0With submodule electric capacityC au_N In parallel;The lower brachium pontis of A phase theiIndividual sub-module capacitanceCal_i During bypass, whereiniValue be 2~N, submodule electric capacityC al_i With submodule electric capacityCal_i-1In parallel by clamp diode;Auxiliary IGBT moduleT 2During Guan Bi, auxiliary capacitorC 2By clamp diode and submodule electric capacityCal_N In parallel.
Under normal circumstances, from the most all pressure subsidiary loop in 6NIndividual auxiliary switchK au_i2、K al_i2、K bu_i2、K bl_i2、K cu_i2、K cl_i2、T au_j 、T al_j 、T bu_j 、T bl_j 、T cu_j 、T cl_j Normally closed, whereiniValue be 1~K,jValue beK+ 1~N, assist IGBT moduleT 1During Guan Bi, auxiliary capacitorC 1With submodule electric capacityCbu_1In parallel by clamp diode;Brachium pontis in B phaseiIndividual sub-module capacitanceCbu_i During bypass, whereiniValue be 1~N-1, submodule electric capacityCbu_i With submodule electric capacityC bu_i+1In parallel by clamp diode;Brachium pontis in B phaseNIndividual sub-module capacitanceCbu_N During bypass, submodule electric capacityC bu_N By clamp diode, two brachium pontis reactorsL 0With submodule electric capacityC bl_1In parallel;The lower brachium pontis of B phase theiIndividual sub-module capacitanceCbl_i During bypass, whereiniValue be 1~N-1, submodule electric capacityC bl_i With submodule electric capacityC bl_i+1In parallel by clamp diode;The lower brachium pontis of B phase theNIndividual sub-module capacitanceCbl_N During bypass, submodule electric capacityCbl_N With auxiliary capacitorC 2In parallel by clamp diode.Above-mentioned auxiliary IGBT moduleT 1" logic and " that trigger first submodule triggering signal of signal and brachium pontis in A, C phase consistent;Auxiliary IGBT moduleT 2The lower brachium pontis of triggering signal and B phase theNThe triggering signal of individual submodule is consistent.
During orthogonal stream energy is changed, each submodule alternately puts into, bypass, assists IGBT moduleT 1、T 2Being alternately closed, turn off, between A, B phase upper and lower bridge arm, capacitance voltage is under the effect of clamp diode, column constraint under meeting:
It follows that at half-bridge/full-bridge series-parallel connection MMC in the dynamic process completing the conversion of orthogonal stream energy, meet following constraints:
Constraints that C, B the are alternate constraints alternate with A, B is consistent.
Being illustrated from above-mentioned, this half-bridge/full-bridge series-parallel connection MMC topology possesses submodule capacitor voltage from the ability of equalization.
Finally should be noted that: described embodiment is only some embodiments of the present application rather than whole embodiments.Based on the embodiment in the application, the every other embodiment that those of ordinary skill in the art are obtained under not making creative work premise, broadly fall into the scope of the application protection.
Claims (6)
1. the centralized half-bridge of auxiliary capacitor based on equality constraint/full-bridge series-parallel connection MMC is from the most all pressing topology, it is characterised in that: include the half-bridge/full-bridge series-parallel connection MMC model being made up of A, B, C three-phase, each brachium pontis of A, B, C three-phase respectively byKIndividual half-bridge submodule,N-KIndividual full-bridge submodule and 1 brachium pontis reactor are in series;Including 6NIndividual auxiliary switch (6KIndividual mechanical switch, 6N-6KIndividual IGBT module), 6N+5 clamp diode, 2 auxiliary capacitors and 2 auxiliary IGBT module constitute from the most all pressing subsidiary loop.
2. according to the centralized half-bridge of auxiliary capacitor based on the equality constraint/full-bridge series-parallel connection MMC described in right 1 from all pressing topology, it is characterised in that: the 1st submodule of brachium pontis, its submodule electric capacity in A phaseCau_1Negative pole is connected with the 2nd of brachium pontis module I GBT module midpoint in A phase downwards, and its submodule IGBT module midpoint is upwards connected with dc bus positive pole;In A phase the of brachium pontisiIndividual submodule, whereiniValue be 2~K-1, its submodule electric capacityCau_i Negative pole is downwards with in A phase the of brachium pontisi+ 1 sub-module I GBT module midpoint is connected, and its submodule IGBT module midpoint is upwards with in A phase the of brachium pontisi-1 sub-module capacitanceC au_i-1Negative pole is connected;In A phase the of brachium pontisKIndividual half-bridge submodule, its submodule electric capacityC au_K Negative pole is downwards with in A phase the of brachium pontisKOne IGBT module midpoint of+1 submodule is connected, and its submodule IGBT module midpoint is upwards with in A phase the of brachium pontisK-1 sub-module capacitanceCau_K-1Negative pole is connected;In A phase the of brachium pontisjIndividual submodule, whereinjValue beK+ 2~N-1, one IGBT module midpoint of its submodule downwards with brachium pontis in A phase thejOne IGBT module midpoint of+1 submodule is connected, another IGBT module midpoint upwards with brachium pontis in A phasejOne IGBT module midpoint of-1 submodule is connected;Brachium pontis in A phaseNIndividual submodule, one IGBT module midpoint of its submodule is down through two brachium pontis reactorsL 01st sub-module I GBT module midpoint of brachium pontis lower with A phase is connected, and another IGBT module midpoint is upwards with in A phase the of brachium pontisNOne IGBT module midpoint of-1 submodule is connected;The of the lower brachium pontis of A phaseiIndividual submodule, whereiniValue be 2~K-1, its submodule electric capacityCal_i Negative pole downwards with A phase time brachium pontis thei+ 1 sub-module I GBT module midpoint is connected, its IGBT module midpoint upwards brachium pontis lower with A phase thei-1 sub-module capacitanceC al_i-1Negative pole is connected;The of the lower brachium pontis of A phaseKIndividual submodule, its submodule electric capacityC al_K Negative pole downwards with A phase time brachium pontis theKOne IGBT module midpoint of+1 submodule is connected, its submodule IGBT module midpoint upwards brachium pontis lower with A phase theK-1 sub-module capacitanceCal_K-1Negative pole is connected;The lower brachium pontis of A phase thejIndividual submodule, whereinjValue beK+ 2~N-1, one IGBT module midpoint of its submodule downwards with A phase time brachium pontis thejOne IGBT module midpoint of+1 submodule is connected, another IGBT module midpoint upwards brachium pontis lower with A phase thejOne IGBT module midpoint of-1 submodule is connected;The lower brachium pontis of A phase theNOne IGBT module midpoint of individual submodule is connected with dc bus negative pole downwards, the of another IGBT module midpoint upwards brachium pontis lower with A phaseNOne IGBT module midpoint of-1 submodule is connected;1st submodule of brachium pontis, its submodule electric capacity in B phaseC bu_1Positive pole is upwards connected with dc bus positive pole, its submodule IGBT module midpoint downwards with the 2nd sub-module capacitance of brachium pontis in B phaseC bu_2Positive pole is connected;In B phase the of brachium pontisiIndividual submodule, whereiniValue be 2~K-1, its submodule electric capacityCbu_i Positive pole is upwards with in B phase the of brachium pontisi-1 sub-module I GBT module midpoint is connected, and its submodule IGBT module midpoint is downwards with in B phase the of brachium pontisi+ 1 sub-module capacitanceCbu_i+1Positive pole is connected;In B phase the of brachium pontisKIndividual submodule, its submodule electric capacityCbu_K Positive pole is upwards with in B phase the of brachium pontisK-1 sub-module I GBT module midpoint is connected, its submodule IGBT module midpoint downwards with brachium pontis in B phase theKOne IGBT module midpoint of+1 submodule is connected;In B phase the of brachium pontisjIndividual submodule, whereinjValue beK+ 2~N-1, one IGBT module midpoint of its submodule upwards with brachium pontis in B phasejOne IGBT module midpoint of-1 submodule is connected, another IGBT module midpoint downwards with brachium pontis in B phase thejOne IGBT module midpoint of+1 submodule is connected;Brachium pontis in B phaseNIndividual submodule, one IGBT module midpoint upwards with brachium pontis in B phaseNOne IGBT module midpoint of-1 submodule is connected, and another IGBT module midpoint is down through two brachium pontis reactorsL 01st sub-module capacitance of brachium pontis lower with B phaseC bl_1Positive pole is connected;The of the lower brachium pontis of B phaseiIndividual submodule, whereiniValue be 2~K-1, its submodule electric capacityC bl_i The of positive pole upwards brachium pontis lower with B phasei-1 sub-module I GBT module midpoint is connected, its submodule IGBT module midpoint downwards with the of B phase time brachium pontisi+ 1 sub-module capacitanceC bl_i+1Positive pole is connected;The of the lower brachium pontis of B phaseKIndividual submodule, its submodule electric capacityC bl_K Positive pole upwards brachium pontis lower with B phase theK-1 sub-module I GBT module midpoint is connected, its submodule IGBT module midpoint downwards with B phase time brachium pontis theKOne IGBT module midpoint of+1 submodule is connected;The lower brachium pontis of B phase thejIndividual submodule, whereinjValue beK+ 2~N-1, one IGBT module midpoint upwards brachium pontis lower with B phase thejOne IGBT module midpoint of-1 submodule is connected, another IGBT module midpoint downwards with B phase time brachium pontis thejMono-IGBT module midpoint of+1 sub-module I GBT is connected;The lower brachium pontis of B phase theNIndividual submodule, one IGBT module midpoint of its submodule upwards brachium pontis lower with B phase theNOne IGBT module midpoint of-1 submodule is connected, and another IGBT module midpoint is connected with dc bus negative pole downwards;The connected mode of C phase upper and lower bridge arm submodule can be consistent with A, it is also possible to consistent with B;Due to the existence of full-bridge submodule, unnecessary configuration IGCT between the upper and lower output lead of half-bridge submodule;Therefore it is parallel with mechanical switch between the output lead up and down of A, B, C phase upper and lower bridge arm submoduleK au_i1、K al_i1、K bu_i1、K bl_i1、K cu_i1、K cl_i1、K au_j 、K al_j 、K bu_j 、K bl_j 、K cu_j 、K cl_j , whereiniValue be 1~K,jValue beK+ 1~N;A, B, C three-phase status that above-mentioned annexation is constituted is consistent, and other topologys after three-phase symmetrized in turn are in interest field.
3. according to the centralized half-bridge of auxiliary capacitor based on the equality constraint/full-bridge series-parallel connection MMC described in right 1 from all pressing topology, it is characterised in that: in all pressure subsidiary loops, auxiliary capacitorC 1Positive pole connects auxiliary IGBT moduleT 1, negative pole connects clamp diode and is incorporated to dc bus positive pole;Auxiliary capacitorC 2Negative pole connects auxiliary IGBT moduleT 2, positive pole connects clamp diode and is incorporated to dc bus negative pole;Clamp diode, passes through auxiliary switchK au_121st sub-module capacitance in brachium pontis in connection A phaseC au_1With auxiliary capacitorC 1Positive pole;Pass through auxiliary switchK au_i2、K Au_(i+ 1) 2Connect in A phase in brachium pontis theiIndividual sub-module capacitanceC au_i Withi+ 1 sub-module capacitanceC au_i+1Positive pole, whereiniValue be 1~K-1;Pass through auxiliary switchK au_K2、T au_K+1Connect in A phase in brachium pontis theKIndividual sub-module capacitanceC au_K WithK+ 1 sub-module capacitanceC au_K+1Positive pole;Pass through auxiliary switchT au_j 、T au_j+1Connect in A phase in brachium pontis thejIndividual sub-module capacitanceC au_j Withj+ 1 sub-module capacitanceC au_j+1Positive pole, whereinjValue beK+ 1~N-1;Pass through auxiliary switchT au_N 、K al_12Connect in A phase in brachium pontis theNIndividual sub-module capacitanceCau_N Brachium pontis 1st sub-module capacitance lower with A phaseC al_1Positive pole;Pass through auxiliary switchK al_i2、K Al_(i+ 1) 2Connect in the lower brachium pontis of A phase theiIndividual sub-module capacitanceC al_i Withi+ 1 sub-module capacitanceC al_i+1Positive pole, whereiniValue be 1~K-1;Pass through auxiliary switchK al_K2、T al_K+1Connect in the lower brachium pontis of A phase theKIndividual sub-module capacitanceCal_K WithK+ 1 sub-module capacitanceCal_K+1Positive pole;Pass through auxiliary switchT al_j 、T al_j+1Connect in the lower brachium pontis of A phase thejIndividual sub-module capacitanceC al_j Withj+ 1 sub-module capacitanceC al_j+1Positive pole, whereinjValue beK+ 1~N-1;Pass through auxiliary switchT al_N Connect in the lower brachium pontis of A phase theNIndividual sub-module capacitanceC al_N With auxiliary capacitorC 2Positive pole;Clamp diode, passes through auxiliary switchK bu_121st sub-module capacitance in brachium pontis in connection B phaseC bu_1With auxiliary capacitorC 1Negative pole;Pass through auxiliary switchK bu_i2、K Bu_(i+ 1) 2Connect in B phase in brachium pontis theiIndividual sub-module capacitanceCbu_i Withi+ 1 sub-module capacitanceCbu_i+1Negative pole, whereiniValue be 1~K-1;Pass through auxiliary switchK bu_K2、T bu_K+1Connect in B phase in brachium pontis theKIndividual sub-module capacitanceCbu_K WithK+ 1 sub-module capacitanceCbu_K+1Negative pole;Pass through auxiliary switchT bu_j 、T bu_j+1Connect in B phase in brachium pontis thejIndividual sub-module capacitanceCbu_j Withj+ 1 sub-module capacitanceCbu_j+1Negative pole, whereinjValue beK+ 1~N-1;Pass through auxiliary switchT bu_N 、K bl_12Connect in B phase in brachium pontis theNIndividual sub-module capacitanceCbu_N 1st sub-module capacitance in brachium pontis lower with B phaseCbl_1Negative pole;Pass through auxiliary switchK bl_i2、K Bl_(i+ 1) 2Connect in the lower brachium pontis of B phase theiIndividual sub-module capacitanceCbl_i Withi+ 1 sub-module capacitanceCbl_i+1Negative pole, whereiniValue be 1~K-1;Pass through auxiliary switchK bl_K2、T bl_K+1Connect in the lower brachium pontis of B phase theKIndividual sub-module capacitanceCbl_K WithK+ 1 sub-module capacitanceCbl_K+1Negative pole;Pass through auxiliary switchT bl_j 、T bl_j+1Connect in the lower brachium pontis of B phase thejIndividual sub-module capacitanceCbl_j Withj+ 1 sub-module capacitanceCbl_j+1Negative pole, whereinjValue beK+ 1~N-1;Pass through auxiliary switchT bl_N Connect in the lower brachium pontis of B phase theNIndividual sub-module capacitanceC bl_N With auxiliary capacitorC 2Negative pole;The annexation of C phase clamp diode is corresponding with the annexation of its submodule;In above-mentioned A, B, C three-phase 6NIndividual auxiliary switchK au_i2、K al_i2、K bu_i2、K bl_i2、K cu_i2、K cl_i2、T au_j 、T al_j 、T bu_j 、T bl_j 、T cu_j 、T cl_j , whereiniValue be 1~K,jValue beK+ 1~N, 6N+ 5 clamp diodes, 2 auxiliary capacitorsC 1、C 2And 2 auxiliary IGBT moduleT 1、T 2, collectively form from all pressing subsidiary loop.
4. according to the centralized half-bridge of auxiliary capacitor based on the equality constraint/full-bridge series-parallel connection MMC described in right 1 from the most all pressing topology, it is characterised in that: during normal condition, in the most all pressure subsidiary loops 6NIndividual auxiliary switchK au_i2、K al_i2、K bu_i2、K bl_i2、K cu_i2、K cl_i2、T au_j 、T al_j 、T bu_j 、T bl_j 、T cu_j 、T cl_j Normally closed, whereiniValue be 1~K,jValue beK+ 1~N;During failure condition, 6N-6KIndividual auxiliary switchT au_j 、T al_j 、T bu_j 、T bl_j 、T cu_j 、T cl_j Disconnect, whereinjValue beK+ 1~N;Under normal circumstances, first sub-module capacitance of brachium pontis in A phaseCau_1During bypass, now assist IGBT moduleT 1Disconnect, submodule electric capacityC au_1With auxiliary capacitorC 1In parallel by clamp diode;Brachium pontis in A phaseiIndividual sub-module capacitanceCau_i During bypass, whereiniValue be 2~N, submodule electric capacityCau_i With submodule electric capacityCau_i-1In parallel by clamp diode;Lower first the sub-module capacitance of brachium pontis of A phaseCal_1During bypass, submodule electric capacityCal_1By clamp diode, two brachium pontis reactorsL 0With submodule electric capacityC au_N In parallel;The lower brachium pontis of A phase theiIndividual sub-module capacitanceCal_i During bypass, whereiniValue be 2~N, submodule electric capacityC al_i With submodule electric capacityCal_i-1In parallel by clamp diode;Auxiliary IGBT moduleT 2During Guan Bi, auxiliary capacitorC 2By clamp diode and submodule electric capacityCal_N In parallel;Auxiliary IGBT moduleT 1During Guan Bi, auxiliary capacitorC 1With submodule electric capacityCbu_1In parallel by clamp diode;Brachium pontis in B phaseiIndividual sub-module capacitanceCbu_i During bypass, whereiniValue be 1~N-1, submodule electric capacityCbu_i With submodule electric capacityC bu_i+1In parallel by clamp diode;Brachium pontis in B phaseNIndividual sub-module capacitanceCbu_N During bypass, submodule electric capacityC bu_N By clamp diode, two brachium pontis reactorsL 0With submodule electric capacityC bl_1In parallel;The lower brachium pontis of B phase theiIndividual sub-module capacitanceCbl_i During bypass, whereiniValue be 1~N-1, submodule electric capacityC bl_i With submodule electric capacityC bl_i+1In parallel by clamp diode;The lower brachium pontis of B phase theNIndividual sub-module capacitanceCbl_N During bypass, submodule electric capacityCbl_N With auxiliary capacitorC 2In parallel by clamp diode;Wherein assist IGBT moduleT 1" logic and " that trigger first submodule triggering signal of signal and brachium pontis in A, C phase consistent;Auxiliary IGBT moduleT 2The lower brachium pontis of triggering signal and B phase theNThe triggering signal of individual submodule is consistent;During orthogonal stream energy is changed, each submodule alternately puts into, bypass, assists IGBT moduleT 1、T 2Being alternately closed, turn off, A phase upper and lower bridge arm submodule capacitor voltage, under the effect of clamp diode, meets lower column constraint,U C 1≥U C au_1≥U C au_2…≥U C au_N ≥U C al_1≥U C al_2…≥U C al_N ≥U C 2;B phase upper and lower bridge arm submodule capacitor voltage, under the effect of clamp diode, meets lower column constraint,U C 1≤U C bu_1≤U C bu_2…≤U C bu_N ≤U C bl_1≤U C bl_2…≤U C bl_N ≤U C 2;The centralized half-bridge of auxiliary capacitor based on equality constraint/full-bridge series-parallel connection MMC is from all pressing topology, in dynamic process, and auxiliary capacitorC 1Both can be as the highest electric capacity of A phase voltage, again can be as the minimum electric capacity of B phase voltage;Auxiliary capacitorC 2Both can be as the minimum electric capacity of A phase voltage, again can be as the highest electric capacity of B phase voltage;Against two equality constraints, max(U C a)=min(U C b), min(U C a)=max(U C b), in A, B phase upper and lower bridge arm 4NIndividual sub-module capacitance,C au_i 、Cal_i 、C bu_i 、C bl_i , whereiniValue be 1~N, and auxiliary capacitorC 1、C 2, voltage be in self-balancing state, A, B are alternate possesses submodule capacitor voltage from the ability of equalization for topology;If the form of the composition of C phase is consistent with A in topology, then the constraints of C, B capacitive coupling voltage is consistent with capacitance voltage constraints between A, B;If the form of the composition of C phase is consistent with B in topology, then the constraints of A, C capacitive coupling voltage is consistent with capacitance voltage constraints between A, B, and topology possesses submodule capacitor voltage from the ability of equalization;In utilizing clamp diode to realize mutually between adjacent submodule on the basis of capacitive energy single-phase flow, rely on equality constraint max(between auxiliary capacitor voltageU C a)=min(U C b), min(U C a)=max(U C b), or max(U C a)=min(U C c), min(U C a)=max(U C c), or max(U C c)=min(U C b), min(U C c)=max(U C b), it is achieved the alternate flowing of capacitive energy constitutes the peripheral passage of capacitive energy, and then keeps alternate submodule capacitor voltage stable, is the protection content of this right.
5. according to the centralized half-bridge of auxiliary capacitor based on the equality constraint/full-bridge series-parallel connection MMC described in right 1 from all pressing topology, it is characterised in that: auxiliary capacitorC 1、C 2Both as the passage of A, B capacitive coupling energy exchange, again as the passage of B, C capacitive coupling energy exchange;The function of auxiliary capacitor focus utilization in topology the most all presses the device consumption in subsidiary loop to reduce;Auxiliary capacitorC 1Function concentrate, auxiliary capacitorC 2Function do not concentrate;Auxiliary capacitorC 1Function do not concentrate, auxiliary capacitorC 2Function concentrate topology in interest field.
6. according to the centralized half-bridge of auxiliary capacitor based on the equality constraint/full-bridge series-parallel connection MMC described in right 1 from all pressing topology, it is characterized in that: the centralized half-bridge of auxiliary capacitor based on equality constraint/full-bridge series-parallel connection MMC is from all pressing topology, not only serve as multi-level voltage source current converter and directly apply to flexible direct-current transmission field, also can be by constituting STATCOM (STATCOM), Research on Unified Power Quality Conditioner (UPQC), the device such as THE UPFC (UPFC) is applied to flexible AC transmission field;Other application scenarios of this utility model topology of indirect utilization and thought are in interest field.
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