CN205725505U - The half-bridge of formula without auxiliary capacitor based on inequality constraints/full-bridge series-parallel connection MMC is from all pressing topology - Google Patents

Abstract

This utility model provides the half-bridge of formula without auxiliary capacitor based on inequality constraints/full-bridge series-parallel connection MMC from all pressing topology.Half-bridge/full-bridge series-parallel connection MMC is in all pressure topologys, half-bridge/full-bridge series-parallel connection MMC model and the auxiliary switch generation electrical link in all pressure subsidiary loop is by subsidiary loop, auxiliary switch closes, both constitute the half-bridge of formula without auxiliary capacitor based on inequality constraints/full-bridge series-parallel connection MMC from all pressing topology, auxiliary switch is opened, and topoligical equivalence is half-bridge/full-bridge series-parallel connection MMC topology.In the case of not emphasizing two kinds of topological variations, 6 in auxiliary switchKIndividual mechanical switch can omit.This half-bridge/full-bridge series-parallel connection MMC is from all pressing topology, there is DC Line Fault clamping ability, do not rely on special Pressure and Control, can be on the basis of completing the conversion of orthogonal stream energy, spontaneously realize the equilibrium of submodule capacitor voltage, submodule can be reduced simultaneously accordingly and trigger frequency and capacitor's capacity, it is achieved the fundamental frequency modulation of MMC.

Description

The half-bridge of formula without auxiliary capacitor based on inequality constraints/full-bridge series-parallel connection MMC is from all pressing Topology

Technical field

This utility model relates to flexible transmission field, is specifically related to a kind of formula without auxiliary capacitor based on inequality constraints half Bridge/full-bridge series-parallel connection MMC is from all pressing topology.

Background technology

Modularization multi-level converter MMC is the developing direction of following HVDC Transmission Technology, and MMC uses sub module cascade Mode constructs converter valve, it is to avoid the directly series connection of big metering device, reduces requirement conforming to device, simultaneously facilitates dilatation And redundant configuration.Along with the rising of level number, output waveform, close to sinusoidal, can effectively avoid the defect of low level VSC-HVDC.

Half-bridge/full-bridge series-parallel connection MMC is combined by half-bridge and full-bridge submodule, and half-bridge sub modular structure is simple, low cost, Running wastage is little, and full-bridge submodule has DC Line Fault clamping ability.

Different from two level, three level VSC, the DC voltage of MMC is not supported by a bulky capacitor, but by one is Arrange separate suspension submodule capacitances in series to support.In order to ensure waveform quality that AC voltage exports and ensure module In each power semiconductor bear identical stress, also for preferably supporting DC voltage, reduce alternate circulation, it is necessary to protect Card submodule capacitor voltage is in the state of dynamic stability at the periodic current disorder of internal organs of brachium pontis power.

Sequence based on capacitance voltage sequence all presses algorithm to be to solve MMC Neutron module capacitance voltage equalization problem at present Main flow thinking.First, the realization of ranking function have to rely on capacitance voltage Millisecond sampling, need substantial amounts of sensor and Optical-fibre channel is coordinated；Secondly, when group number of modules increases, the operand of capacitance voltage sequence increases rapidly, for controlling The hardware designs of device brings huge challenge；Additionally, submodule is cut-off frequency and has the highest wanting by the realization of sequence all pressure algorithms Ask, cut-off frequency and be closely related, in practice process, probably due to all press the restriction of effect with all pressure effects, it has to improve The triggering frequency of submodule, and then bring the increase that inverter is lost.

Document " A DC-Link Voltage Self-Balance Method for a Diode-Clamped Modular Multilevel Converter With Minimum Number of Voltage Sensors ", it is proposed that one Plant the thinking relying on clamp diode and transformator to realize the equilibrium of MMC submodule capacitor voltage.But the program in design Determining degree and destroy the modular nature of submodule, submodule capacitive energy interchange channel is also confined in mutually, could not be fully sharp With the existing structure of MMC, introducing of three transformators also brings along bigger being transformed into while making control strategy complicate This.

Utility model content

For the problems referred to above, the purpose of this utility model is to propose a kind of economy, is independent of all pressing algorithm, simultaneously energy The corresponding submodule that reduces triggers frequency and capacitor's capacity and has the half-bridge/full-bridge series-parallel connection MMC of DC Line Fault clamping ability from all Pressure topology.

The concrete constituted mode of this utility model is as follows.

The half-bridge of formula without auxiliary capacitor based on inequality constraints/full-bridge series-parallel connection MMC is from all pressing topology, including by A, B, C tri- The half-bridge MMC model constituted mutually, each brachium pontis of A, B, C three-phase respectively byKIndividual half-bridge submodule,N -KIndividual full-bridge submodule and 1 Individual brachium pontis reactor is in series；Including by 6NIndividual auxiliary switch (6KIndividual mechanical switch, 6N -6KIndividual IGBT module), 6N + 1 clamp diode composition from the most all pressing subsidiary loop.

The above-mentioned half-bridge of formula without auxiliary capacitor based on inequality constraints/full-bridge series-parallel connection MMC is from all pressing topology, brachium pontis in A phase The 1st submodule, its submodule electric capacity negative pole is connected with the 2nd of brachium pontis module I GBT module midpoint in A phase downwards, Its submodule IGBT module midpoint is upwards connected with dc bus positive pole；In A phase the of brachium pontisiIndividual submodule, whereini Value be 2～K-1, its submodule electric capacity negative pole is downwards with in A phase the of brachium pontisi+ 1 sub-module I GBT module midpoint phase Connecting, its submodule IGBT module midpoint is upwards with in A phase the of brachium pontisi-1 sub-module capacitance negative pole is connected；In A phase The of brachium pontisKIndividual half-bridge submodule, its submodule electric capacity negative pole is downwards with in A phase the of brachium pontisK+ 1 submodule one IGBT module midpoint is connected, and its submodule IGBT module midpoint is upwards with in A phase the of brachium pontisK-1 sub-module capacitance is born Pole is connected；In A phase the of brachium pontisjIndividual submodule, whereinjValue beK+ 2～N-1, one IGBT mould of its submodule Block midpoint downwards with brachium pontis in A phase thejOne IGBT module midpoint of+1 submodule is connected, another IGBT module midpoint Upwards with brachium pontis in A phasejOne IGBT module midpoint of-1 submodule is connected；Brachium pontis in A phaseNIndividual submodule, One IGBT module midpoint of its submodule is down through two brachium pontis reactorsL ₀1st sub-module I GBT mould of brachium pontis lower with A phase Block midpoint is connected, and another IGBT module midpoint is upwards with in A phase the of brachium pontisNIn one IGBT module of-1 submodule Point is connected；The of the lower brachium pontis of A phaseiIndividual submodule, whereiniValue be 2～K-1, its submodule electric capacity negative pole downwards with The lower brachium pontis of A phase thei+ 1 sub-module I GBT module midpoint is connected, its IGBT module midpoint upwards brachium pontis lower with A phase thei -1 Individual sub-module capacitance negative pole is connected；The of the lower brachium pontis of A phaseKIndividual submodule, its submodule electric capacity negative pole downwards with under A phase Brachium pontisKOne IGBT module midpoint of+1 submodule is connected, its submodule IGBT module midpoint upwards brachium pontis lower with A phase TheK-1 sub-module capacitance negative pole is connected；The lower brachium pontis of A phase thejIndividual submodule, whereinjValue beK+ 2～N-1, One IGBT module midpoint of its submodule downwards with A phase time brachium pontis thejOne IGBT module midpoint of+1 submodule is connected, Another IGBT module midpoint upwards brachium pontis lower with A phase thejOne IGBT module midpoint of-1 submodule is connected；The lower bridge of A phase ArmNOne IGBT module midpoint of individual submodule is connected with dc bus negative pole downwards, and another IGBT module midpoint is upwards The of brachium pontis lower with A phaseNOne IGBT module midpoint of-1 submodule is connected.1st submodule of brachium pontis in B phase, its son Module capacitance positive pole is upwards connected with dc bus positive pole, and its submodule IGBT module midpoint is downwards with the in B phase the 2nd of brachium pontis the Individual sub-module capacitance positive pole is connected；In B phase the of brachium pontisiIndividual submodule, whereiniValue be 2～K-1, its submodule Capacitance cathode is upwards with in B phase the of brachium pontisi-1 sub-module I GBT module midpoint is connected, in its submodule IGBT module Point is downwards with in B phase the of brachium pontisi+ 1 sub-module capacitance positive pole is connected；In B phase the of brachium pontisKIndividual submodule, its son Module capacitance positive pole is upwards with in B phase the of brachium pontisK-1 sub-module I GBT module midpoint is connected, its submodule IGBT mould Block midpoint downwards with brachium pontis in B phase theKOne IGBT module midpoint of+1 submodule is connected；In B phase the of brachium pontisjHeight Module, whereinjValue beK+ 2～N-1, one IGBT module midpoint of its submodule upwards with brachium pontis in B phasej-1 One IGBT module midpoint of submodule is connected, another IGBT module midpoint downwards with brachium pontis in B phase thej+ 1 submodule One IGBT module midpoint is connected；Brachium pontis in B phaseNIndividual submodule, one IGBT module midpoint of its submodule upwards with B Go up brachium pontis mutuallyNOne IGBT module midpoint of-1 submodule is connected, and another IGBT module midpoint is down through two brachium pontis ReactorL ₀1st sub-module capacitance positive pole of brachium pontis lower with B phase is connected；The of the lower brachium pontis of B phaseiIndividual submodule, whereini Value be 2～K-1, the of its submodule capacitance cathode upwards brachium pontis lower with B phasei-1 sub-module I GBT module midpoint phase Connect, its submodule IGBT module midpoint downwards with the of B phase time brachium pontisi+ 1 sub-module capacitance positive pole is connected；Under B phase The of brachium pontisKIndividual submodule, its submodule capacitance cathode upwards brachium pontis lower with B phase theK-1 sub-module I GBT module midpoint Be connected, its submodule IGBT module midpoint downwards with B phase time brachium pontis theKOne IGBT module midpoint of+1 submodule is connected Connect；The lower brachium pontis of B phase thejIndividual submodule, whereinjValue beK+ 2～N-1, one IGBT module midpoint of its submodule to Upper with B phase time brachium pontis thejOne IGBT module midpoint of-1 submodule is connected, another IGBT module midpoint downwards with B phase Lower brachium pontisjOne IGBT module midpoint of+1 submodule is connected；The lower brachium pontis of B phase theNIndividual submodule, its submodule one IGBT module midpoint upwards brachium pontis lower with B phase theNOne IGBT module midpoint of-1 submodule is connected, another IGBT mould Block midpoint is connected with dc bus negative pole downwards.The connected mode of C phase upper and lower bridge arm submodule is consistent with A phase or B.

The above-mentioned half-bridge of formula without auxiliary capacitor based on inequality constraints/full-bridge series-parallel connection MMC is from all pressing topology, and it is auxiliary from all pressing Help in loop, clamp diode, connect in A phase in brachium pontis the by auxiliary switchiIndividual sub-module capacitance and thei+ 1 submodule Block capacitance cathode, whereiniValue be 1～N-1；The is connected in A phase in brachium pontis by auxiliary switchNIndividual sub-module capacitance Brachium pontis 1st sub-module capacitance positive pole lower with A phase；The is connected in the lower brachium pontis of A phase by auxiliary switchiIndividual sub-module capacitance and A Descend brachium pontis mutuallyi+ 1 sub-module capacitance positive pole, whereiniValue be 1～N-1.Clamp diode, passes through auxiliary switch Connect in B phase in brachium pontis theiIndividual sub-module capacitance and theiThe negative pole of+1 sub-module capacitance, whereiniValue be 1～N -1；The is connected in B phase in brachium pontis by auxiliary switchNBearing of individual sub-module capacitance brachium pontis 1st sub-module capacitance lower with B phase Pole；The is connected in the lower brachium pontis of B phase by auxiliary switchiThe lower brachium pontis of individual sub-module capacitance and B phase thei+ 1 sub-module capacitance Negative pole, whereiniValue be 1～N-1.Clamp diode simultaneously, connects first submodule of brachium pontis in A phase by auxiliary switch Block electric capacity module capacitance negative pole with brachium pontis in B phase first；The lower brachium pontis of A phase the is connected by auxiliary switchNIndividual submodule electricity Hold and B phase time brachium pontis theNIndividual sub-module capacitance positive pole.The annexation of C phase clamp diode and the annexation of its submodule Corresponding.

Accompanying drawing explanation

Below in conjunction with the accompanying drawings this utility model is further illustrated.

Fig. 1 is the structural representation of half-bridge submodule；

Fig. 2 is the structural representation of full-bridge submodule；

Fig. 3 is that the centralized half-bridge of auxiliary capacitor based on equality constraint/full-bridge series-parallel connection MMC is from all pressing topology.

Detailed description of the invention

For of the present utility model performance and operation principle are expanded on further, below in conjunction with the accompanying drawing composition side to utility model Formula is specifically described with operation principle.But half-bridge based on this principle/full-bridge series-parallel connection MMC is not limited to Fig. 3 from all pressure topologys.

With reference to Fig. 3, the half-bridge of formula without auxiliary capacitor based on inequality constraints/full-bridge series-parallel connection MMC, oneself the most all presses topology, including by A, B, C three-phase constitute half-bridge/full-bridge series-parallel connection MMC model, each brachium pontis of A, B, C three-phase respectively byKIndividual half-bridge submodule,N -KIndividual full-bridge submodule and 1 brachium pontis reactor are in series；Including 6NIndividual auxiliary switch (6KIndividual mechanical switch, 6N -6K Individual IGBT module) and 6N+ 1 clamp diode constitute from the most all pressing subsidiary loop.

In half-bridge/full-bridge series-parallel connection MMC model, the 1st submodule of brachium pontis, its submodule electric capacity in A phaseC­_{au­_1}Negative pole to Being connected with the 2nd of brachium pontis module I GBT module midpoint in A phase down, its submodule IGBT module midpoint is upwards female with direct current Line positive pole is connected；In A phase the of brachium pontisiIndividual submodule, whereiniValue be 2～K-1, its submodule electric capacityC­_{au­_i} Negative pole is downwards with in A phase the of brachium pontisi+ 1 sub-module I GBT module midpoint is connected, its submodule IGBT module midpoint to Upper with in A phase the of brachium pontisi-1 sub-module capacitanceC _{­au­_i-1}Negative pole is connected；In A phase the of brachium pontisKIndividual half-bridge submodule Block, its submodule electric capacityC _{­au­_K} Negative pole is downwards with in A phase the of brachium pontisKOne IGBT module midpoint of+1 submodule is connected Connecing, its submodule IGBT module midpoint is upwards with in A phase the of brachium pontisK-1 sub-module capacitanceC­_{au­_K-1}Negative pole is connected；A Go up the of brachium pontis mutuallyjIndividual submodule, whereinjValue beK+ 2～N-1, one IGBT module midpoint of its submodule is downward With brachium pontis in A phasejOne IGBT module midpoint of+1 submodule is connected, another IGBT module midpoint upwards with A phase Upper brachium pontisjOne IGBT module midpoint of-1 submodule is connected；Brachium pontis in A phaseNIndividual submodule, its submodule one IGBT module midpoint is down through two brachium pontis reactorsL ₀1st sub-module I GBT module midpoint of brachium pontis lower with A phase is connected, Another IGBT module midpoint is upwards with in A phase the of brachium pontisNOne IGBT module midpoint of-1 submodule is connected；Under A phase The of brachium pontisiIndividual submodule, whereiniValue be 2～K-1, its submodule electric capacityC­_{al­_i} Negative pole brachium pontis lower with A phase downwards Thei+ 1 sub-module I GBT module midpoint is connected, its IGBT module midpoint upwards brachium pontis lower with A phase thei-1 submodule Electric capacityC­ _{al­_i-1}Negative pole is connected；The of the lower brachium pontis of A phaseKIndividual submodule, its submodule electric capacityC _{­al_K} Negative pole downwards with A phase Lower brachium pontisKOne IGBT module midpoint of+1 submodule is connected, its submodule IGBT module midpoint upwards brachium pontis lower with A phase TheK-1 sub-module capacitanceC­_{al­_K-1}Negative pole is connected；The lower brachium pontis of A phase thejIndividual submodule, whereinjValue beK+ 2～N-1, one IGBT module midpoint of its submodule downwards with A phase time brachium pontis thejOne IGBT module midpoint phase of+1 submodule Connect, another IGBT module midpoint upwards brachium pontis lower with A phase thejOne IGBT module midpoint of-1 submodule is connected；A Descend brachium pontis mutuallyNOne IGBT module midpoint of individual submodule is connected with dc bus negative pole, in another IGBT module downwards The of point upwards brachium pontis lower with A phaseNOne IGBT module midpoint of-1 submodule is connected.1st submodule of brachium pontis in B phase Block, its submodule electric capacityC _{­bu­_1}Positive pole is upwards connected with dc bus positive pole, and its submodule IGBT module midpoint is downwards and B Go up the 2nd sub-module capacitance of brachium pontis mutuallyC _{­bu­_2}Positive pole is connected；In B phase the of brachium pontisiIndividual submodule, whereiniValue Be 2～K-1, its submodule electric capacityC­_{bu­_i} Positive pole is upwards with in B phase the of brachium pontisi-1 sub-module I GBT module midpoint phase Connecting, its submodule IGBT module midpoint is downwards with in B phase the of brachium pontisi+ 1 sub-module capacitanceC­_{bu­_i+1}Positive pole is connected Connect；In B phase the of brachium pontisKIndividual submodule, its submodule electric capacityC­_{bu­_K} Positive pole is upwards with in B phase the of brachium pontisK-1 submodule Block IGBT module midpoint is connected, its submodule IGBT module midpoint downwards with brachium pontis in B phase theK+ 1 submodule one IGBT module midpoint is connected；In B phase the of brachium pontisjIndividual submodule, whereinjValue beK+ 2～N-1, its submodule One IGBT module midpoint upwards with brachium pontis in B phasejOne IGBT module midpoint of-1 submodule is connected, another IGBT module midpoint downwards with brachium pontis in B phase thejOne IGBT module midpoint of+1 submodule is connected；Brachium pontis in B phaseN Individual submodule, one IGBT module midpoint upwards with brachium pontis in B phaseNOne IGBT module midpoint of-1 submodule is connected Connecing, another IGBT module midpoint is down through two brachium pontis reactorsL ₀1st sub-module capacitance of brachium pontis lower with B phaseC _{­bl­_1} Positive pole is connected；The of the lower brachium pontis of B phaseiIndividual submodule, whereiniValue be 2～K-1, its submodule electric capacityC _{­bl_i} Positive pole Upwards the of brachium pontis lower with B phasei-1 sub-module I GBT module midpoint is connected, and its submodule IGBT module midpoint is downwards and B Descend the of brachium pontis mutuallyi+ 1 sub-module capacitanceC­ _{bl­_i+1}Positive pole is connected；The of the lower brachium pontis of B phaseKIndividual submodule, its submodule Block electric capacityC _{­bl_K} Positive pole upwards brachium pontis lower with B phase theK-1 sub-module I GBT module midpoint is connected, its submodule IGBT mould Block midpoint downwards with B phase time brachium pontis theKOne IGBT module midpoint of+1 submodule is connected；The lower brachium pontis of B phase thejIndividual submodule Block, whereinjValue beK+ 2～N-1, one IGBT module midpoint upwards brachium pontis lower with B phase thej-1 submodule one Individual IGBT module midpoint is connected, another IGBT module midpoint downwards with B phase time brachium pontis thej+ 1 sub-module I GBT mono- IGBT module midpoint is connected；The lower brachium pontis of B phase theNIndividual submodule, one IGBT module midpoint of its submodule upwards with under B phase Brachium pontisNOne IGBT module midpoint of-1 submodule is connected, and another IGBT module midpoint is downwards and dc bus negative pole It is connected.The connected mode of C phase upper and lower bridge arm submodule is consistent with A.

From all pressing in subsidiary loop, clamp diode, passes through auxiliary switchK _{au_i2}、K _{Au_(i+ 1) 2}Connect bridge in A phase In armiIndividual sub-module capacitanceC _{­au­_i} Withi+ 1 sub-module capacitanceC _{­au­_i+1}Positive pole, whereiniValue be 1～K -1；Pass through auxiliary switchK _{au_K2}、T _{au_K+1}Connect in A phase in brachium pontis theKIndividual sub-module capacitanceC _{­au­_K} WithK+ 1 son Module capacitanceC­ _{au_K+1}Positive pole；Pass through auxiliary switchT _{au_j} 、T _{au_j+1}Connect in A phase in brachium pontis thejIndividual sub-module capacitanceC _{­au­_j} Withj+ 1 sub-module capacitanceC _{­au­_j+1}Positive pole, whereinjValue beK+ 1～N-1；Pass through auxiliary switchT _{au_N} 、K _{al_12}Connect in A phase in brachium pontis theNIndividual sub-module capacitanceC­_{au_N} Brachium pontis 1st sub-module capacitance lower with A phaseC _{­al­_1}Positive pole；Pass through auxiliary switchK _{al_i2}、K _{Al_(i+ 1) 2}Connect in the lower brachium pontis of A phase theiIndividual sub-module capacitanceC _{­al­_i} Withi+ 1 sub-module capacitanceC _{­al­_i+1}Positive pole, whereiniValue be 1～K-1；Pass through auxiliary switchK _{al_K2}、T _{al_K+1} Connect in the lower brachium pontis of A phase theKIndividual sub-module capacitanceC­_{al­_K} WithK+ 1 sub-module capacitanceC­_{al­_K+1}Positive pole；By auxiliary SwitchT _{al_j} 、T _{al_j+1}Connect in the lower brachium pontis of A phase thejIndividual sub-module capacitanceC _{­al_j} Withj+ 1 sub-module capacitanceC _{­al­_j+1}Positive pole, whereinjValue beK+ 1～N-1.Clamp diode, passes through auxiliary switchK _{bu_i2}、K _{Bu_(i+ 1) 2} Connect in B phase in brachium pontis theiIndividual sub-module capacitanceC­_{bu­_i} Withi+ 1 sub-module capacitanceC­_{bu­_i+1}Negative pole, whereini's Value be 1～K-1；Pass through auxiliary switchK _{bu_K2}、T _{bu_K+1}Connect in B phase in brachium pontis theKIndividual sub-module capacitanceC­_{bu­_K} With TheK+ 1 sub-module capacitanceC­_{bu­_K+1}Negative pole；Pass through auxiliary switchT _{bu_j} 、T _{bu_j+1}Connect in B phase in brachium pontis thejHeight Module capacitanceC­_{bu­_j} Withj+ 1 sub-module capacitanceC­_{bu­_j+1}Negative pole, whereinjValue beK+ 1～N-1；By auxiliary Help switchT _{bu_N} 、K _{bl_12}Connect in B phase in brachium pontis theNIndividual sub-module capacitanceC­_{bu­_N} 1st submodule in brachium pontis lower with B phase Electric capacityC­_{bl_1}Negative pole；Pass through auxiliary switchK _{bl_i2}、K _{Bl_(i+ 1) 2}Connect in the lower brachium pontis of B phase theiIndividual sub-module capacitanceC­_{bl­_i} Withi+ 1 sub-module capacitanceC­_{bl­_i+1}Negative pole, whereiniValue be 1～K-1；Pass through auxiliary switchK _{bl_K2}、T _{bl_K+1}Connect in the lower brachium pontis of B phase theKIndividual sub-module capacitanceC­_{bl_K} WithK+ 1 sub-module capacitanceC­_{bl­_K+1}Negative pole；Pass through Auxiliary switchT _{bl_j} 、T _{bl_j+1}Connect in the lower brachium pontis of B phase thejIndividual sub-module capacitanceC­_{bl­_j} Withj+ 1 sub-module capacitanceC­_{bl_j+1}Negative pole, whereinjValue beK+ 1～N-1.Clamp diode simultaneously, passes through auxiliary switchK _{bu_12}Connect in A phase First sub-module capacitance of brachium pontisC­_{au­_1}With first sub-module capacitance of brachium pontis in B phaseC­_{bu­_1}Negative pole；Pass through auxiliary switchT _{al_N} Connect the lower brachium pontis of A phase theNIndividual sub-module capacitanceC­ _{al_N} Brachium pontis lower with B phase theNIndividual sub-module capacitanceC­_{bl­_N} Positive pole.C The annexation of phase clamp diode is consistent with A.

, from the most all pressure subsidiary loop in 6NIndividual auxiliary switchK _{au_i2}、K _{al_i2}、K _{bu_i2}、K _{bl_i2}、K _{cu_i2}、K _{cl_i2}、T _{au_j} 、T _{al_j} 、T _{bu_j} 、T _{bl_j} 、T _{cu_j} 、T _{cl_j} Normally closed, whereiniValue be 1～K,jValue ForK+ 1～N, brachium pontis in A phaseiIndividual sub-module capacitanceC­_{au­_i} During bypass, whereiniValue be 2～N, submodule electricity HoldC­_{au­_i} With submodule electric capacityC­_{au­_i-1}In parallel by clamp diode；Lower first the sub-module capacitance of brachium pontis of A phaseC­_{al_1}Other Lu Shi, submodule electric capacityC­_{al­_1}By clamp diode, two brachium pontis reactorsL ₀With submodule electric capacityC­ _{au­_N} In parallel；A phase Lower brachium pontisiIndividual sub-module capacitanceC­_{al_i} During bypass, whereiniValue be 2～N, submodule electric capacityC­ _{al­_i} With submodule Electric capacityC­_{al_i-1}In parallel by clamp diode.

Under normal circumstances, from the most all pressure subsidiary loop in 6NIndividual auxiliary switchK _{au_i2}、K _{al_i2}、K _{bu_i2}、K _{bl_i2}、K _{cu_i2}、K _{cl_i2}、T _{au_j} 、T _{al_j} 、T _{bu_j} 、T _{bl_j} 、T _{cu_j} 、T _{cl_j} Normally closed, whereiniValue be 1～K ,jValue beK+ 1～N, brachium pontis in B phaseiIndividual sub-module capacitanceC­_{bu­_i} During bypass, whereiniValue be 1～N - 1, submodule electric capacityC­_{bu­_i} With submodule electric capacityC­ _{bu­_i+1}In parallel by clamp diode；Brachium pontis in B phaseNIndividual submodule Electric capacityC­_{bu_N} During bypass, submodule electric capacityC _{­bu­_N} By clamp diode, two brachium pontis reactorsL ₀With submodule electric capacityC­ _{bl­_1}In parallel；The lower brachium pontis of B phase theiIndividual sub-module capacitanceC­_{bl_i} During bypass, whereiniValue be 1～N-1, submodule electricity HoldC _{­bl­_i} With submodule electric capacityC­ _{bl_i+1}In parallel by clamp diode.

During orthogonal stream energy is changed, each submodule alternately puts into, bypass, electric capacity between A, B phase upper and lower bridge arm Voltage, under the effect of clamp diode, meets and descends column constraint:

Rely on across alternate two clamp diodes of A, B, the half-bridge of formula without auxiliary capacitor/full-bridge based on inequality constraints In series-parallel connection MMC the most all pressure topologys, submodule electric capacityC­_{au­_1}With submodule electric capacityC­_{bu­_1}Voltage between, submodule electric capacityC _{­al­_N} With submodule electric capacityC­_{bl_N} Voltage between there is following inequality constraints；

It follows that half-bridge/full-bridge series-parallel connection MMC is in the dynamic process completing the conversion of orthogonal stream energy, meet following Constraints:

Constraints that C, B the are alternate constraints alternate with A, B is consistent.

Being illustrated from above-mentioned, this half-bridge/full-bridge series-parallel connection MMC topology possesses submodule capacitor voltage from the ability of equalization.

Finally should be noted that: described embodiment is only some embodiments of the present application rather than whole realities Execute example.Based on the embodiment in the application, those of ordinary skill in the art are obtained under not making creative work premise Every other embodiment, broadly fall into the application protection scope.

Claims (4)

1. the half-bridge of formula without auxiliary capacitor based on inequality constraints/full-bridge series-parallel connection MMC is from all pressing topology, it is characterised in that: include The half-bridge being made up of A, B, C three-phase/full-bridge series-parallel connection MMC model, each brachium pontis of A, B, C three-phase respectively byKIndividual half-bridge submodule,N -KIndividual full-bridge submodule and 1 brachium pontis reactor are in series；Including by 6KIndividual mechanical switch, 6N -6KIndividual IGBT module group The auxiliary switch become, and 6N+ 1 clamp diode constitute from the most all pressing subsidiary loop.

2. according to the half-bridge of formula without auxiliary capacitor based on the inequality constraints/full-bridge series-parallel connection MMC described in right 1 from all pressing topology, It is characterized in that: the 1st submodule of brachium pontis, its submodule electric capacity in A phaseC­_{au­_1}Negative pole downwards with in A phase the 2nd of brachium pontis Submodule IGBT module midpoint is connected, and its submodule IGBT module midpoint is upwards connected with dc bus positive pole；In A phase The of brachium pontisiIndividual submodule, whereiniValue be 2～K-1, its submodule electric capacityC­_{au­_i} Negative pole downwards with bridge in A phase The of armi+ 1 sub-module I GBT module midpoint is connected, and its submodule IGBT module midpoint is upwards with in A phase the of brachium pontisi-1 sub-module capacitanceC _{­au­_i-1}Negative pole is connected；In A phase the of brachium pontisKIndividual half-bridge submodule, its submodule electric capacityC _{­au­_K} Negative pole is downwards with in A phase the of brachium pontisKOne IGBT module midpoint of+1 submodule is connected, in its submodule IGBT module Point is upwards with in A phase the of brachium pontisK-1 sub-module capacitanceC­_{au­_K-1}Negative pole is connected；In A phase the of brachium pontisjIndividual submodule Block, whereinjValue beK+ 2～N-1, one IGBT module midpoint of its submodule downwards with brachium pontis in A phase thej+ 1 son One IGBT module midpoint of module is connected, another IGBT module midpoint upwards with brachium pontis in A phasej-1 submodule One IGBT module midpoint is connected；Brachium pontis in A phaseNIndividual submodule, one IGBT module midpoint of its submodule is down through two Individual brachium pontis reactorL ₀1st sub-module I GBT module midpoint of brachium pontis lower with A phase is connected, another IGBT module midpoint to Upper with in A phase the of brachium pontisNOne IGBT module midpoint of-1 submodule is connected；The of the lower brachium pontis of A phaseiIndividual submodule, WhereiniValue be 2～K-1, its submodule electric capacityC­_{al­_i} Negative pole downwards with A phase time brachium pontis thei+ 1 sub-module I GBT mould Block midpoint is connected, its IGBT module midpoint upwards brachium pontis lower with A phase thei-1 sub-module capacitanceC­ _{al­_i-1}Negative pole is connected； The of the lower brachium pontis of A phaseKIndividual submodule, its submodule electric capacityC _{­al_K} Negative pole downwards with A phase time brachium pontis theK+ 1 submodule one Individual IGBT module midpoint is connected, its submodule IGBT module midpoint upwards brachium pontis lower with A phase theK-1 sub-module capacitanceC­_{al­_K-1}Negative pole is connected；The lower brachium pontis of A phase thejIndividual submodule, whereinjValue beK+ 2～N-1, its submodule one IGBT module midpoint downwards with A phase time brachium pontis thejOne IGBT module midpoint of+1 submodule is connected, another IGBT mould Block midpoint upwards brachium pontis lower with A phase thejOne IGBT module midpoint of-1 submodule is connected；The lower brachium pontis of A phase theNIndividual submodule One IGBT module midpoint of block is connected with dc bus negative pole downwards, another IGBT module midpoint upwards brachium pontis lower with A phase ?NOne IGBT module midpoint of-1 submodule is connected；1st submodule of brachium pontis, its submodule electric capacity in B phaseC _{­bu­_1}Positive pole is upwards connected with dc bus positive pole, its submodule IGBT module midpoint downwards with in B phase the 2nd of brachium pontis Submodule electric capacityC _{­bu­_2}Positive pole is connected；In B phase the of brachium pontisiIndividual submodule, whereiniValue be 2～K-1, its son Module capacitanceC­_{bu­_i} Positive pole is upwards with in B phase the of brachium pontisi-1 sub-module I GBT module midpoint is connected, its submodule IGBT module midpoint is downwards with in B phase the of brachium pontisi+ 1 sub-module capacitanceC­_{bu­_i+1}Positive pole is connected；Brachium pontis in B phase TheKIndividual submodule, its submodule electric capacityC­_{bu­_K} Positive pole is upwards with in B phase the of brachium pontisK-1 sub-module I GBT module midpoint Be connected, its submodule IGBT module midpoint downwards with brachium pontis in B phase theKOne IGBT module midpoint of+1 submodule is connected Connect；In B phase the of brachium pontisjIndividual submodule, whereinjValue beK+ 2～N-1, one IGBT module midpoint of its submodule Upwards with brachium pontis in B phasejOne IGBT module midpoint of-1 submodule is connected, and another IGBT module midpoint is downwards and B Go up brachium pontis mutuallyjOne IGBT module midpoint of+1 submodule is connected；Brachium pontis in B phaseNIndividual submodule, one IGBT Module midpoint upwards with brachium pontis in B phaseNOne IGBT module midpoint of-1 submodule is connected, in another IGBT module O'clock down through two brachium pontis reactorsL ₀1st sub-module capacitance of brachium pontis lower with B phaseC _{­bl­_1}Positive pole is connected；The lower brachium pontis of B phase ?iIndividual submodule, whereiniValue be 2～K-1, its submodule electric capacityC _{­bl_i} The of positive pole upwards brachium pontis lower with B phasei-1 sub-module I GBT module midpoint is connected, its submodule IGBT module midpoint downwards with the of B phase time brachium pontisi+ 1 son Module capacitanceC­ _{bl­_i+1}Positive pole is connected；The of the lower brachium pontis of B phaseKIndividual submodule, its submodule electric capacityC _{­bl_K} Positive pole upwards with B Descend brachium pontis mutuallyK-1 sub-module I GBT module midpoint is connected, its submodule IGBT module midpoint downwards with B phase time brachium pontis theKOne IGBT module midpoint of+1 submodule is connected；The lower brachium pontis of B phase thejIndividual submodule, whereinjValue beK+ 2～N-1, one IGBT module midpoint upwards brachium pontis lower with B phase thejOne IGBT module midpoint of-1 submodule is connected, separately One IGBT module midpoint downwards with B phase time brachium pontis thejMono-IGBT module midpoint of+1 sub-module I GBT is connected；Under B phase Brachium pontisNIndividual submodule, one IGBT module midpoint of its submodule upwards brachium pontis lower with B phase theN-1 submodule one IGBT module midpoint is connected, and another IGBT module midpoint is connected with dc bus negative pole downwards；C phase upper and lower bridge arm submodule The connected mode of block can be consistent with A, it is also possible to consistent with B；Due to the existence of full-bridge submodule, half-bridge submodule is upper and lower Unnecessary configuration IGCT between output lead；Therefore it is parallel with machinery between the output lead up and down of A, B, C phase upper and lower bridge arm submodule SwitchK _{au_i1}、K _{al_i1}、K _{bu_i1}、K _{bl_i1}、K _{cu_i1}、K _{cl_i1}、K _{au_j} 、K _{al_j} 、K _{bu_j} 、K _{bl_j} 、K _{cu_j} 、K _{cl_j} , whereini Value be 1～K,jValue beK+ 1～N；A, B, C three-phase status that above-mentioned annexation is constituted is consistent.

3. according to the half-bridge of formula without auxiliary capacitor based on the inequality constraints/full-bridge series-parallel connection MMC described in right 1 from all pressing topology, It is characterized in that: in all pressure subsidiary loops, clamp diode, pass through auxiliary switchK _{au_i2}、K _{Au_(i+ 1) 2}Connect bridge in A phase In armiIndividual sub-module capacitanceC _{­au­_i} Withi+ 1 sub-module capacitanceC _{­au­_i+1}Positive pole, whereiniValue be 1～K -1；Pass through auxiliary switchK _{au_K2}、T _{au_K+1}Connect in A phase in brachium pontis theKIndividual sub-module capacitanceC _{­au­_K} WithK+ 1 submodule Block electric capacityC­ _{au_K+1}Positive pole；Pass through auxiliary switchT _{au_j} 、T _{au_j+1}Connect in A phase in brachium pontis thejIndividual sub-module capacitanceC _{­au­_j} Withj+ 1 sub-module capacitanceC _{­au­_j+1}Positive pole, whereinjValue beK+ 1～N-1；Pass through auxiliary switchT _{au_N} 、K _{al_12}Connect in A phase in brachium pontis theNIndividual sub-module capacitanceC­_{au_N} Brachium pontis 1st sub-module capacitance lower with A phaseC _{­al­_1}Positive pole； Pass through auxiliary switchK _{al_i2}、K _{Al_(i+ 1) 2}Connect in the lower brachium pontis of A phase theiIndividual sub-module capacitanceC _{­al­_i} Withi+ 1 submodule Block electric capacityC _{­al­_i+1}Positive pole, whereiniValue be 1～K-1；Pass through auxiliary switchK _{al_K2}、T _{al_K+1}Connect the lower bridge of A phase In armKIndividual sub-module capacitanceC­_{al­_K} WithK+ 1 sub-module capacitanceC­_{al­_K+1}Positive pole；Pass through auxiliary switchT _{al_j} 、T _{al_j+1}Connect in the lower brachium pontis of A phase thejIndividual sub-module capacitanceC _{­al_j} Withj+ 1 sub-module capacitanceC _{­al­_j+1}Positive pole, its InjValue beK+ 1～N-1；Clamp diode, passes through auxiliary switchK _{bu_i2}、K _{Bu_(i+ 1) 2}Connect in B phase in brachium pontis theiIndividual sub-module capacitanceC­_{bu­_i} Withi+ 1 sub-module capacitanceC­_{bu­_i+1}Negative pole, whereiniValue be 1～K-1；Pass through Auxiliary switchK _{bu_K2}、T _{bu_K+1}Connect in B phase in brachium pontis theKIndividual sub-module capacitanceC­_{bu­_K} WithK+ 1 sub-module capacitanceC­_{bu­_K+1}Negative pole；Pass through auxiliary switchT _{bu_j} 、T _{bu_j+1}Connect in B phase in brachium pontis thejIndividual sub-module capacitanceC­_{bu­_j} Withj + 1 sub-module capacitanceC­_{bu­_j+1}Negative pole, whereinjValue beK+ 1～N-1；Pass through auxiliary switchT _{bu_N} 、K _{bl_12}Connect In B phase in brachium pontisNIndividual sub-module capacitanceC­_{bu­_N} 1st sub-module capacitance in brachium pontis lower with B phaseC­_{bl_1}Negative pole；By auxiliary Help switchK _{bl_i2}、K _{Bl_(i+ 1) 2}Connect in the lower brachium pontis of B phase theiIndividual sub-module capacitanceC­_{bl­_i} Withi+ 1 sub-module capacitanceC­_{bl­_i+1}Negative pole, whereiniValue be 1～K-1；Pass through auxiliary switchK _{bl_K2}、T _{bl_K+1}Connect in the lower brachium pontis of B phase theK Individual sub-module capacitanceC­_{bl_K} WithK+ 1 sub-module capacitanceC­_{bl­_K+1}Negative pole；Pass through auxiliary switchT _{bl_j} 、T _{bl_j+1}Connect B phase In lower brachium pontisjIndividual sub-module capacitanceC­_{bl­_j} Withj+ 1 sub-module capacitanceC­_{bl_j+1}Negative pole, whereinjValue beK + 1～N-1；Clamp diode simultaneously, passes through auxiliary switchK _{bu_12}Connect first sub-module capacitance of brachium pontis in A phaseC­_{au­_1}With B Go up first sub-module capacitance of brachium pontis mutuallyC­_{bu­_1}Negative pole；Pass through auxiliary switchT _{al_N} Connect the lower brachium pontis of A phase theNIndividual submodule Electric capacityC­ _{al_N} Brachium pontis lower with B phase theNIndividual sub-module capacitanceC­_{bl­_N} Positive pole；The annexation of C phase clamp diode and its submodule The annexation of block is corresponding；In above-mentioned A, B, C three-phase 6NIndividual auxiliary switchK _{au_i2}、K _{al_i2}、K _{bu_i2}、K _{bl_i2}、K _{cu_i2}、K _{cl_i2}、T _{au_j} 、T _{al_j} 、T _{bu_j} 、T _{bl_j} 、T _{cu_j} 、T _{cl_j} , whereiniValue be 1～K,jValue beK+ 1～N, 6 N+ 1 clamp diode, collectively forms from all pressing subsidiary loop.

4. according to the half-bridge of formula without auxiliary capacitor based on the inequality constraints/full-bridge series-parallel connection MMC described in right 1 from all pressing topology, It is characterized in that: during normal condition, from the most all pressure subsidiary loop in 6NIndividual auxiliary switchK _{au_i2}、K _{al_i2}、K _{bu_i2}、K _{bl_i2}、K _{cu_i2}、K _{cl_i2}、T _{au_j} 、T _{al_j} 、T _{bu_j} 、T _{bl_j} 、T _{cu_j} 、T _{cl_j} , normally closed, whereiniValue be 1 ~K,jValue beK+ 1～N；During failure condition, 6N -6KIndividual auxiliary switchT _{au_j} 、T _{al_j} 、T _{bu_j} 、T _{bl_j} 、T _{cu_j} 、T _{cl_j} Disconnect, whereinjValue beK+ 1～N；Under normal circumstances, brachium pontis in A phaseiIndividual sub-module capacitanceC­_{au­_i} During bypass, whereiniValue be 2～N, submodule electric capacityC­_{au­_i} With submodule electric capacityC­_{au­_i-1}By clamper two Pole pipe is in parallel；Lower first the sub-module capacitance of brachium pontis of A phaseC­_{al_1}During bypass, submodule electric capacityC­_{al­_1}By clamp diode, Two brachium pontis reactorsL ₀With submodule electric capacityC­ _{au­_N} In parallel；The lower brachium pontis of A phase theiIndividual sub-module capacitanceC­_{al_i} During bypass, its IniValue be 2～N, submodule electric capacityC­ _{al­_i} With submodule electric capacityC­_{al_i-1}In parallel by clamp diode；Bridge in B phase ArmiIndividual sub-module capacitanceC­_{bu­_i} During bypass, whereiniValue be 1～N-1, submodule electric capacityC­_{bu­_i} With submodule Electric capacityC­ _{bu­_i+1}In parallel by clamp diode；Brachium pontis in B phaseNIndividual sub-module capacitanceC­_{bu_N} During bypass, submodule electric capacityC _{­bu­_N} By clamp diode, two brachium pontis reactorsL ₀With submodule electric capacityC­ _{bl­_1}In parallel；The lower brachium pontis of B phase theiHeight Module capacitanceC­_{bl_i} During bypass, whereiniValue be 1～N-1, submodule electric capacityC _{­bl­_i} With submodule electric capacityC­ _{bl_i+1}Logical Cross clamp diode in parallel；The 1st sub-module capacitance of brachium pontis in A phase simultaneouslyC­_{au­_1}During input, submodule electric capacityC­ _{au­_1}With son Module capacitanceC­_{bu­_1}In parallel by clamp diode；The lower brachium pontis of B phase theNIndividual sub-module capacitanceC­_{bl_N} During input, submodule electricity HoldC­_{al­_N} With submodule electric capacityC _{­bl_N} In parallel by clamp diode；During orthogonal stream energy is changed, each submodule Block alternately puts into, bypass, and A phase upper and lower bridge arm submodule capacitor voltage, under the effect of clamp diode, meets lower column constraint, U _{C­au_1}≥U _{C­au_2}…≥U _{C­au_N} ≥U _{C­al_1}≥U _{C­al_2}…≥U _{C­al_N} ；B phase upper and lower bridge arm submodule capacitor voltage exists Under the effect of clamp diode, meet lower column constraint,U _{C­bu_1}≤U _{C­bu_2}…≤U _{C­bu_N} ≤U _{C­bl_1}≤U _{C­bl_2}…≤U _{C­bl_N} ；Rely on across alternate two clamp diodes of A, B, the half-bridge of formula without auxiliary capacitor/full-bridge based on inequality constraints In series-parallel connection MMC the most all pressure topologys, submodule electric capacityC­_{au­_1}With submodule electric capacityC­_{bu­_1}Voltage between, submodule electric capacityC _{­al­_N} With submodule electric capacityC­_{bl_N} Voltage between there is following inequality constraints,U _{C­au_1}≤U _{C­bu_1},U _{C­al_N} ≥U _{C­bl_N} ；Based on this inequality constraints, in A, B phase upper and lower bridge arm 4NIndividual sub-module capacitance,C _{au_i} 、C_{al_i} 、C _{bu_i} 、C _{bl_i} , whereiniValue be 1～N, voltage be in self-balancing state, topology A, B is alternate possesses submodule capacitor voltage from all Weighing apparatus ability；If the form of the composition of C phase is consistent with A in topology, then electricity between constraints and A, B of C, B capacitive coupling voltage Hold voltage constraints consistent；If the form of the composition of C phase is consistent with B in topology, then the constraints of A, C capacitive coupling voltage Consistent with capacitance voltage constraints between A, B, topology possesses submodule capacitor voltage from the ability of equalization.