CN105471306A - Auxiliary capacitor distributed type full-bridge MMC automatic voltage-equalizing topology based on inequality constraint - Google Patents

Auxiliary capacitor distributed type full-bridge MMC automatic voltage-equalizing topology based on inequality constraint Download PDF

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CN105471306A
CN105471306A CN201610047423.8A CN201610047423A CN105471306A CN 105471306 A CN105471306 A CN 105471306A CN 201610047423 A CN201610047423 A CN 201610047423A CN 105471306 A CN105471306 A CN 105471306A
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phase
brachium pontis
igbt module
auxiliary capacitor
module
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CN105471306B (en
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赵成勇
许建中
刘航
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North China Electric Power University
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North China Electric Power University
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/483—Converters with outputs that each can have more than two voltages levels
    • H02M7/49—Combination of the output voltage waveforms of a plurality of converters
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/0067—Converter structures employing plural converter units, other than for parallel operation of the units on a single load
    • H02M1/0077—Plural converter units whose outputs are connected in series

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Inverter Devices (AREA)
  • Power Conversion In General (AREA)

Abstract

The invention provides an auxiliary capacitor distributed type full-bridge MMC automatic voltage-equalizing topology based on inequality constraint. The full-bridge MMC automatic voltage-equalizing topology is established by a full-bridge MMC model and an automatic voltage-equalizing auxiliary circuit in a joint manner; the full-bridge MMC model is electrically connected with the automatic voltage-equalizing auxiliary circuit through 6N IGBT modules in the auxiliary circuit; when the IGBT modules are triggered, the auxiliary capacitor distributed type full-bridge MMC automatic voltage-equalizing topology based on the inequality constraint is formed by the full-bridge MMC model and the automatic voltage-equalizing auxiliary circuit; and when the IGBT modules are locked, the topology is equivalent to a full-bridge MMC topology. The full-bridge MMC automatic voltage-equalizing topology can realize clamping for direct current side faults; meanwhile, the capacitive voltage balance for a sub module can be automatically realized on a basis of completing direct current/alternating current energy conversion without depending on special voltage-equalizing control; and in addition, the triggering frequency and the capacitance value of the sub module can be correspondingly lowered, and the full-bridge MMC base frequency modulation can be realized.

Description

The distributed full-bridge MMC of auxiliary capacitor based on inequality constraints is from all pressing topology
Technical field
The present invention relates to flexible transmission field, being specifically related to the distributed full-bridge MMC of a kind of auxiliary capacitor based on inequality constraints from all pressing topology.
Background technology
Modularization multi-level converter MMC is the developing direction of following HVDC Transmission Technology, MMC adopts submodule (Sub-module, SM) mode of cascade constructs converter valve, avoid the direct series connection of large metering device, reduce the conforming requirement of device, be convenient to dilatation and redundant configuration simultaneously.Along with the rising of level number, output waveform, close to sinusoidal, effectively can avoid the defect of low level VSC-HVDC.
Full-bridge MMC is combined by full-bridge submodule, and full-bridge submodule is by four IGBT module, and a sub-module capacitance and 1 mechanical switch are formed, and flexible operation, has DC Line Fault clamping ability.
Different from two level, three level VSC, the DC voltage of full-bridge MMC is not supported by a bulky capacitor, but is supported by a series of separate suspension submodule capacitances in series.In order to ensure the waveform quality that AC voltage exports and ensure that in module, each power semiconductor bears identical stress, also in order to better support direct voltage, reduce alternate circulation, must ensure that submodule capacitor voltage is in the state of dynamic stability in the periodicity flowing of brachium pontis power.
Sequence based on capacitance voltage sequence all presses algorithm to be the main flow thinking solving full-bridge MMC Neutron module capacitance voltage equalization problem at present.But the realization of ranking function must rely on the Millisecond sampling of capacitance voltage, needs a large amount of transducers and optical-fibre channel to be coordinated; Secondly, when group number of modules increases, the operand of capacitance voltage sequence increases rapidly, for the hardware designs of controller brings huge challenge; In addition, sequence all presses the cut-off frequency of the realization of algorithm to submodule to have very high requirement, cut-offs frequency and all presses effect to be closely related, in practice process, may because all press the restriction of effect, the trigger rate of raising submodule of having to, and then bring the increase of converter loss.
Document " ADC-LinkVoltageSelf-BalanceMethodforaDiode-ClampedModula rMultilevelConverterWithMinimumNumberofVoltageSensors ", proposes a kind of clamp diode and transformer of relying on to realize the thinking of MMC submodule capacitor voltage equilibrium.But the program to a certain degree destroys the modular nature of submodule in design, submodule capacitive energy interchange channel is also confined to mutually, the existing structure of MMC could not be made full use of, while being introduced in of three transformers makes control strategy complicated, also can bring larger improvement cost.
Summary of the invention
For the problems referred to above, the object of the invention is to propose a kind of economy, modular, do not rely on and all press algorithm, simultaneously can corresponding reduction submodule trigger rate and capacitor's capacity and the full-bridge MMC with DC Line Fault clamping ability from all pressing topology.
The concrete constituted mode of the present invention is as follows.
The distributed full-bridge MMC of auxiliary capacitor based on inequality constraints from all pressing topology, comprises the full-bridge MMC model be made up of A, B, C three-phase, each brachium pontis of A, B, C three-phase respectively by nindividual full-bridge submodule and 1 brachium pontis reactor are in series; Comprise by 6 nindividual IGBT module, 6 n+ 11 clamp diodes, 8 auxiliary capacitors, 4 auxiliary IGBT module compositions from all pressing subsidiary loop.
The distributed full-bridge MMC of the above-mentioned auxiliary capacitor based on inequality constraints is from all pressing topology, in full-bridge MMC model, 1st submodule of brachium pontis in A phase, an one IGBT module mid point is upwards connected with DC bus positive pole, and another IGBT module mid point is connected with the 2nd submodule IGBT module mid point of brachium pontis in A phase downwards; In A phase brachium pontis iindividual submodule, wherein ivalue be 2 ~ n-1, an one IGBT module mid point upwards with of brachium pontis in A phase i-1 submodule IGBT module mid point is connected, another IGBT module mid point downwards with the of brachium pontis in A phase i+ 1 submodule IGBT module mid point is connected; In A phase brachium pontis nindividual submodule, an one IGBT module mid point is connected through the 1st submodule IGBT module mid point of the lower brachium pontis of two brachium pontis reactors and A phase downwards, another IGBT module mid point upwards with the of brachium pontis in A phase n-1 submodule IGBT module mid point is connected; The of the lower brachium pontis of A phase iindividual submodule, wherein ivalue be 2 ~ n-1, an one IGBT module mid point upwards with A phase lower brachium pontis the i-1 submodule IGBT module mid point is connected, another IGBT module mid point downwards with the of A phase time brachium pontis i+ 1 submodule IGBT module mid point is connected; The of the lower brachium pontis of A phase nindividual submodule, an one IGBT module mid point is connected with DC bus negative pole downwards, another IGBT module mid point upwards with A phase lower brachium pontis the n-1 submodule two IGBT module mid points are connected.The connected mode of B phase and C phase upper and lower bridge arm submodule is consistent with A.
The distributed full-bridge MMC of the above-mentioned auxiliary capacitor based on inequality constraints is from all pressing topology, from all pressing in subsidiary loop, first auxiliary capacitor is in parallel by clamp diode with second auxiliary capacitor, second auxiliary capacitor positive pole connects auxiliary IGBT module, and first auxiliary capacitor negative pole connects clamp diode and be incorporated to DC bus positive pole; 3rd auxiliary capacitor is in parallel by clamp diode with the 4th auxiliary capacitor, and the 3rd auxiliary capacitor negative pole connects auxiliary IGBT module, and the 4th auxiliary capacitor positive pole connects clamp diode and be incorporated to DC bus negative pole; 5th auxiliary capacitor is in parallel by clamp diode with the 6th auxiliary capacitor, and the 5th auxiliary capacitor positive pole connects auxiliary IGBT module, and the 6th auxiliary capacitor negative pole connects clamp diode and be incorporated to DC bus positive pole; 7th auxiliary capacitor is in parallel by clamp diode with the 8th auxiliary capacitor, and the 8th auxiliary capacitor negative pole connects auxiliary IGBT module, and the 7th auxiliary capacitor positive pole connects clamp diode and be incorporated to DC bus negative pole.Clamp diode, by the 1st sub-module capacitance and first auxiliary capacitor positive pole in brachium pontis in IGBT module connection A phase; The is connected in A phase in brachium pontis by IGBT module iindividual sub-module capacitance and i+ 1 sub-module capacitance positive pole, wherein ivalue be 1 ~ n-1; The is connected in A phase in brachium pontis by IGBT module nindividual sub-module capacitance brachium pontis 1st sub-module capacitance positive pole lower to A phase; The is connected in the lower brachium pontis of A phase by IGBT module ithe lower brachium pontis of individual sub-module capacitance and A phase the i+ 1 sub-module capacitance positive pole, wherein ivalue be 1 ~ n-1; The is connected in the lower brachium pontis of A phase by IGBT module nindividual sub-module capacitance and the 3rd auxiliary capacitor positive pole.Clamp diode, by the 1st sub-module capacitance and second auxiliary capacitor negative pole in brachium pontis in IGBT module connection B phase; The is connected in B phase in brachium pontis by IGBT module iindividual sub-module capacitance and i+ 1 sub-module capacitance negative pole, wherein ivalue be 1 ~ n-1; The is connected in B phase in brachium pontis by IGBT module nindividual sub-module capacitance brachium pontis 1st sub-module capacitance negative pole lower to B phase; The is connected in the lower brachium pontis of B phase by IGBT module ithe lower brachium pontis of individual sub-module capacitance and B phase the i+ 1 sub-module capacitance negative pole, wherein ivalue be 2 ~ n-1; The is connected in the lower brachium pontis of B phase by IGBT module nindividual sub-module capacitance and the 4th auxiliary capacitor negative pole.When between C phase upper and lower bridge arm Neutron module, the connected mode of clamp diode is consistent with A, 6th auxiliary capacitor positive pole connects the sub-module capacitance positive pole of brachium pontis first in C phase through auxiliary IGBT module, clamp diode, 5th auxiliary capacitor negative pole connects the upper sub-module capacitance negative pole of brachium pontis first of B phase through auxiliary IGBT module, clamp diode, and the 8th auxiliary capacitor positive pole be brachium pontis the under auxiliary IGBT module, clamp diode connect C phase nindividual sub-module capacitance positive pole, the 7th auxiliary capacitor negative pole connects the lower brachium pontis of B phase the through auxiliary IGBT module, clamp diode nindividual sub-module capacitance negative pole; When between C phase upper and lower bridge arm Neutron module, the connected mode of clamp diode is consistent with B, 5th auxiliary capacitor negative pole connects the sub-module capacitance negative pole of brachium pontis first in C phase through auxiliary IGBT module, clamp diode, 6th auxiliary capacitor positive pole connects the upper sub-module capacitance positive pole of brachium pontis first of A phase through auxiliary IGBT module, clamp diode, and the 7th auxiliary capacitor negative pole be brachium pontis the under auxiliary IGBT module, clamp diode connect C phase nindividual sub-module capacitance negative pole, the 8th auxiliary capacitor positive pole connects the lower brachium pontis of A phase the through auxiliary IGBT module, clamp diode nindividual sub-module capacitance positive pole.
Accompanying drawing explanation
Fig. 1 is the structural representation of full-bridge submodule;
Fig. 2 is from all pressing topology based on the distributed full-bridge MMC of auxiliary capacitor of inequality constraints.
Embodiment
For setting forth performance of the present invention and operation principle further, be specifically described to the constituted mode invented and operation principle below in conjunction with accompanying drawing.But be not limited to Fig. 2 based on the full-bridge MMC of this principle from all pressing topology.
With reference to figure 2, the distributed full-bridge MMC of the auxiliary capacitor based on inequality constraints from all pressing topology, comprises the full-bridge MMC model be made up of A, B, C three-phase, each brachium pontis of A, B, C three-phase respectively by nindividual full-bridge submodule and 1 brachium pontis reactor are in series, and comprise by 6 nindividual IGBT module, 6 n+ 11 clamp diodes, 8 auxiliary capacitors, 4 auxiliary IGBT module compositions from all pressing subsidiary loop.
In full-bridge MMC model, the 1st submodule of brachium pontis in A phase, an one IGBT module mid point is upwards connected with DC bus positive pole, and another IGBT module mid point is connected with the 2nd submodule IGBT module mid point of brachium pontis in A phase downwards; In A phase brachium pontis iindividual submodule, wherein ivalue be 2 ~ n-1, an one IGBT module mid point upwards with of brachium pontis in A phase i-1 submodule IGBT module mid point is connected, another IGBT module mid point downwards with the of brachium pontis in A phase i+ 1 submodule IGBT module mid point is connected; In A phase brachium pontis nindividual submodule, an one IGBT module mid point upwards with of brachium pontis in A phase n-1 submodule IGBT module mid point is connected, and another IGBT module mid point is downwards through two brachium pontis reactors l 0be connected with the 1st full-bridge submodule IGBT module mid point of the lower brachium pontis of A phase; The of the lower brachium pontis of A phase iindividual submodule, wherein ivalue be 2 ~ n-1, an one IGBT module mid point upwards with A phase lower brachium pontis the i-1 submodule IGBT module mid point is connected, another IGBT module mid point downwards with the of A phase time brachium pontis i+ 1 submodule IGBT module mid point is connected; The of the lower brachium pontis of A phase nindividual submodule, an one IGBT module mid point is connected with DC bus negative pole downwards, another IGBT module mid point upwards with A phase lower brachium pontis the n-1 submodule IGBT module mid point is connected.The connected mode of B phase and C phase upper and lower bridge arm submodule is consistent with A.
From all pressing in subsidiary loop, auxiliary capacitor c 1with auxiliary capacitor c 2in parallel by clamp diode, auxiliary capacitor c 2positive pole connects auxiliary IGBT module t 1, auxiliary capacitor c 1negative pole connects clamp diode and is incorporated to DC bus positive pole; Auxiliary capacitor c 3with auxiliary capacitor c 4in parallel by clamp diode, auxiliary capacitor c 3negative pole connects auxiliary IGBT module t 2, auxiliary capacitor c 4positive pole connects clamp diode and is incorporated to DC bus negative pole; Auxiliary capacitor c 5with auxiliary capacitor c 6in parallel by clamp diode, auxiliary capacitor c 5positive pole connects auxiliary IGBT module t 3, auxiliary capacitor c 6negative pole connects clamp diode and is incorporated to DC bus positive pole; Auxiliary capacitor c 7with auxiliary capacitor c 8in parallel by clamp diode, auxiliary capacitor c 8negative pole connects auxiliary IGBT module t 4, auxiliary capacitor c 7positive pole connects clamp diode and is incorporated to DC bus negative pole.Clamp diode, passes through IGBT module t au_11st sub-module capacitance in brachium pontis in connection A phase c -au-_1 with auxiliary capacitor c 1positive pole; Pass through IGBT module t au_ i , t au_ i+ 1 to connect in A phase in brachium pontis the iindividual sub-module capacitance c -au-_ i with i+ 1 sub-module capacitance c- au-_ i+ 1 positive pole, wherein ivalue be 1 ~ n-1; Pass through IGBT module t au_ n , t al_1to connect in A phase in brachium pontis the nindividual sub-module capacitance c- au-_ n brachium pontis 1st sub-module capacitance lower to A phase c- al-_1positive pole; By IGBT module T al_ i , t al_ i+ 1 to connect in the lower brachium pontis of A phase the iindividual sub-module capacitance c -al-_ i with the lower brachium pontis of A phase the i+ 1 sub-module capacitance c- al-_ i+ 1 positive pole, wherein ivalue be 1 ~ n-1; Pass through IGBT module t al_ n to connect in the lower brachium pontis of A phase the nindividual sub-module capacitance c -al_ n with auxiliary capacitor c 3positive pole.Clamp diode, passes through IGBT module t bu_11st sub-module capacitance in brachium pontis in connection B phase c- bu-_1with auxiliary capacitor c 2, auxiliary capacitor c 5negative pole; Pass through IGBT module t bu_ i , t bu_ i+ 1 to connect in B phase in brachium pontis the iindividual sub-module capacitance c- bu-_ i with i+ 1 sub-module capacitance c -bu-_ i+ 1 negative pole, wherein ivalue be 1 ~ n-1; Pass through IGBT module t bu _ N , t bl_1to connect in B phase in brachium pontis the nindividual sub-module capacitance c- bu_ n brachium pontis 1st sub-module capacitance lower to B phase c- bl-_1negative pole; Pass through IGBT module t bl_ i , t bl_ i+ 1 to connect in the lower brachium pontis of B phase the iindividual sub-module capacitance c- bl-_ i with the lower brachium pontis of B phase the i+ 1 sub-module capacitance c -bl-_ i+ 1 negative pole, wherein ivalue be 1 ~ n-1; Pass through IGBT module t bl_ n to connect in the lower brachium pontis of B phase the nindividual sub-module capacitance c- bl-_ n with auxiliary capacitor c 4, auxiliary capacitor c 7negative pole.Auxiliary capacitor c 6positive pole is through auxiliary IGBT module t cu_1, clamp diode connects brachium pontis first sub-module capacitance in C phase c cu_1positive pole; Auxiliary capacitor c 8positive pole is through auxiliary IGBT module t cl_ n , clamp diode connects the lower brachium pontis of C phase the nindividual sub-module capacitance c cl_ n positive pole.
Under normal circumstances, from all pressing in subsidiary loop 6 nindividual IGBT module t au_ i , t al_ i , t bu_i, t bl_ i , t cu_ i , t cl_ i normally closed, wherein ivalue be 1 ~ n, brachium pontis first sub-module capacitance in A phase c au_1during bypass, now auxiliary IGBT module t 1disconnect, submodule electric capacity c au_1with auxiliary capacitor c 1in parallel by clamp diode; Brachium pontis in A phase iindividual sub-module capacitance c au_ i during bypass, wherein ivalue be 2 ~ n, submodule electric capacity c au_ i with submodule electric capacity c au_ i-1 in parallel by clamp diode; Lower brachium pontis first the sub-module capacitance of A phase c al_1during bypass, submodule electric capacity c al_1by clamp diode, two brachium pontis reactors l 0with submodule electric capacity c au_ n in parallel; The lower brachium pontis of A phase the iindividual sub-module capacitance c al_ i during bypass, wherein ivalue be 2 ~ n, submodule electric capacity c al_ i with submodule electric capacity c al_ i-1 in parallel by clamp diode; Auxiliary IGBT module t 2time closed, auxiliary capacitor c 3by clamp diode and submodule electric capacity c al_ n in parallel.
Under normal circumstances, from all pressing in subsidiary loop 6 nindividual IGBT module t au_ i , t al_ i , t bu_i, t bl_ i , t cu_ i , t cl_ i normally closed, wherein ivalue be 1 ~ n, auxiliary IGBT module t 1time closed, auxiliary capacitor c 2with submodule electric capacity c bu_1in parallel by clamp diode; Brachium pontis in B phase iindividual sub-module capacitance c bu_ i during bypass, wherein ivalue be 1 ~ n-1, submodule electric capacity c bu_ i with submodule electric capacity c bu_ i+ 1 in parallel by clamp diode; Brachium pontis in B phase nindividual sub-module capacitance c bu_ n during bypass, submodule electric capacity c bu_ n by clamp diode, two brachium pontis reactors l 0with submodule electric capacity c bl_1in parallel; The lower brachium pontis of B phase the iindividual sub-module capacitance c bl_ i during bypass, wherein ivalue be 1 ~ n-1, submodule electric capacity c bl_ i with submodule electric capacity c bl_ i+ 1 in parallel by clamp diode; The lower brachium pontis of B phase the nindividual sub-module capacitance c bl_ n during bypass, submodule electric capacity c bl_ n with auxiliary capacitor c 4in parallel by clamp diode.Wherein auxiliary IGBT module t 1triggering signal and brachium pontis in A phase first submodule triggering signal consistent; Auxiliary IGBT module t 2the lower brachium pontis of triggering signal and B phase the nthe triggering signal of individual submodule is consistent.
In the process of orthogonal stream energy conversion, each submodule alternately drops into, bypass, auxiliary IGBT module t 1, t 2be alternately closed, turn off, A, B phase upper and lower bridge arm submodule capacitor voltage, under the effect of clamp diode, meets lower column constraint:
Due to auxiliary capacitor c 1, c 2, c 3, c 4the relation of voltage meets:
In like manner, B, C phase upper and lower bridge arm submodule capacitor voltage meets following condition:
Due to auxiliary capacitor c 5, c 6, c 7, c 8the relation of voltage meets:
It can thus be appreciated that, at single clamp MMC in the dynamic process completing the conversion of orthogonal stream energy, meet constraints below:
Illustrated from above-mentioned, this full-bridge MMC topology possesses submodule capacitor voltage from the ability of equalization.
Finally should be noted that: described embodiment is only some embodiments of the present application, instead of whole embodiments.Based on the embodiment in the application, those of ordinary skill in the art are not making the every other embodiment obtained under creative work prerequisite, all belong to the scope of the application's protection.

Claims (5)

1. based on the distributed full-bridge MMC of auxiliary capacitor of inequality constraints from all pressing topology, it is characterized in that: comprise the full-bridge MMC model be made up of A, B, C three-phase, each brachium pontis of A, B, C three-phase respectively by nindividual full-bridge submodule and 1 brachium pontis reactor are in series; Comprise by 6 nindividual IGBT module, 6 n+ 11 clamp diodes, 8 auxiliary capacitors c 1, c 2, c 3, c 4, c 5, c 6, c 7, c 8, 4 auxiliary IGBT module t 1, t 2, t 3, t 4what form all presses subsidiary loop certainly.
2. the distributed full-bridge of the auxiliary capacitor based on the inequality constraints MMC according to right 1 is from all pressing topology, it is characterized in that: in full-bridge MMC model, 1st submodule of brachium pontis in A phase, an one IGBT module mid point is upwards connected with DC bus positive pole, and another IGBT module mid point is connected with the 2nd submodule IGBT module mid point of brachium pontis in A phase downwards; In A phase brachium pontis iindividual submodule, wherein ivalue be 2 ~ n-1, an one IGBT module mid point upwards with of brachium pontis in A phase i-1 submodule IGBT module mid point is connected, another IGBT module mid point downwards with the of brachium pontis in A phase i+ 1 submodule IGBT module mid point is connected; In A phase brachium pontis nindividual submodule, an one IGBT module mid point upwards with of brachium pontis in A phase n-1 submodule IGBT module mid point is connected, and another IGBT module mid point is downwards through two brachium pontis reactors l 0be connected with the 1st full-bridge submodule IGBT module mid point of the lower brachium pontis of A phase; The of the lower brachium pontis of A phase iindividual submodule, wherein ivalue be 2 ~ n-1, an one IGBT module mid point upwards with A phase lower brachium pontis the i-1 submodule IGBT module mid point is connected, another IGBT module mid point downwards with the of A phase time brachium pontis i+ 1 submodule IGBT module mid point is connected; The of the lower brachium pontis of A phase nindividual submodule, an one IGBT module mid point is connected with DC bus negative pole downwards, another IGBT module mid point upwards with A phase lower brachium pontis the n-1 submodule IGBT module mid point is connected; The connected mode of B phase and C phase upper and lower bridge arm submodule is consistent with A; At of A, B, C phase upper and lower bridge arm iindividual submodule be parallel with mechanical switch respectively between output line up and down k au_ i , k al_ i , k bu_ i , k bl_ i , k cu_ i , k cl_ i , wherein ivalue be 1 ~ n; A, B, C three-phase status that above-mentioned annexation is formed is consistent, and other topologys after three-phase symmetrized in turn are in interest field.
3. the distributed full-bridge of the auxiliary capacitor based on the inequality constraints MMC according to right 1, from all pressing topology, is characterized in that: from all pressing in subsidiary loop, auxiliary capacitor c 1with auxiliary capacitor c 2in parallel by clamp diode, auxiliary capacitor c 2positive pole connects auxiliary IGBT module t 1, auxiliary capacitor c 1negative pole connects clamp diode and is incorporated to DC bus positive pole; Auxiliary capacitor c 3with auxiliary capacitor c 4in parallel by clamp diode, auxiliary capacitor c 3negative pole connects auxiliary IGBT module t 2, auxiliary capacitor c 4positive pole connects clamp diode and is incorporated to DC bus negative pole; Auxiliary capacitor c 5with auxiliary capacitor c 6in parallel by clamp diode, auxiliary capacitor c 5positive pole connects auxiliary IGBT module t 3, auxiliary capacitor c 6negative pole connects clamp diode and is incorporated to DC bus positive pole; Auxiliary capacitor c 7with auxiliary capacitor c 8in parallel by clamp diode, auxiliary capacitor c 8negative pole connects auxiliary IGBT module t 4, auxiliary capacitor c 7positive pole connects clamp diode and is incorporated to DC bus negative pole; Clamp diode, passes through IGBT module t au_11st sub-module capacitance in brachium pontis in connection A phase c- au-_1with auxiliary capacitor c 1positive pole; Pass through IGBT module t au_ i , t au_ i+ 1 to connect in A phase in brachium pontis the iindividual sub-module capacitance c -au-_ i with i+ 1 sub-module capacitance c- au-_ i+ 1 positive pole, wherein ivalue be 1 ~ n-1; Pass through IGBT module t au_ n , t al_1to connect in A phase in brachium pontis the nindividual sub-module capacitance c- au-_ n brachium pontis 1st sub-module capacitance lower to A phase c- al-_1positive pole; By IGBT module T al_ i , t al_ i+ 1 to connect in the lower brachium pontis of A phase the iindividual sub-module capacitance c -al-_ i with the lower brachium pontis of A phase the i+ 1 sub-module capacitance c- al-_ i+ 1 positive pole, wherein ivalue be 1 ~ n-1; Pass through IGBT module t al_ n to connect in the lower brachium pontis of A phase the nindividual sub-module capacitance c -al_ n with auxiliary capacitor c 3positive pole; Clamp diode, passes through IGBT module t bu_11st sub-module capacitance in brachium pontis in connection B phase c- bu-_1with auxiliary capacitor c 2negative pole; Pass through IGBT module t bu_ i , t bu_ i+ 1 to connect in B phase in brachium pontis the iindividual sub-module capacitance c- bu-_ i with i+ 1 sub-module capacitance c -bu-_ i+ 1 negative pole, wherein ivalue be 1 ~ n-1; Pass through IGBT module t bu _ N , t bl_1to connect in B phase in brachium pontis the nindividual sub-module capacitance c- bu_ n brachium pontis 1st sub-module capacitance lower to B phase c- bl-_1negative pole; Pass through IGBT module t bl_ i , t bl_ i+ 1 to connect in the lower brachium pontis of B phase the iindividual sub-module capacitance c- bl-_ i with the lower brachium pontis of B phase the i+ 1 sub-module capacitance c -bl-_ i+ 1 negative pole, wherein ivalue be 1 ~ n-1; Pass through IGBT module t bl_ n to connect in the lower brachium pontis of B phase the nindividual sub-module capacitance c- bl-_ n with auxiliary capacitor c 4negative pole; When between C phase upper and lower bridge arm Neutron module, the connected mode of clamp diode is consistent with A, auxiliary capacitor c 6positive pole is through IGBT module t cu_1, clamp diode connects brachium pontis first sub-module capacitance in C phase c cu_1positive pole, auxiliary capacitor c 5negative pole is through IGBT module t bu_1, clamp diode connects brachium pontis first sub-module capacitance in B phase c bu_1negative pole, auxiliary capacitor c 8positive pole is through IGBT module t cl_ n , clamp diode connects the lower brachium pontis of C phase the nindividual sub-module capacitance c cl_ n positive pole, auxiliary capacitor c 7negative pole is through IGBT module t bl_ n , clamp diode connects the lower brachium pontis of B phase the nindividual sub-module capacitance c bl_ n negative pole; When between C phase upper and lower bridge arm Neutron module, the connected mode of clamp diode is consistent with B, auxiliary capacitor c 5negative pole is through IGBT module t cu_1, clamp diode connects brachium pontis first sub-module capacitance in C phase c cu_1negative pole, auxiliary capacitor c 6positive pole is through IGBT module t au_1, clamp diode connects brachium pontis first sub-module capacitance in A phase c au_1positive pole, auxiliary capacitor c 7negative pole is through IGBT module t cl_ n , clamp diode connects the lower brachium pontis of C phase the nindividual sub-module capacitance c cl_ n negative pole, auxiliary capacitor c 8positive pole is through IGBT module t al_ n , clamp diode connects the lower brachium pontis of A phase the nindividual sub-module capacitance c al_ n positive pole; In above-mentioned A, B, C three-phase 6 nindividual IGBT module t au_ i , t al_ i , t bu_ i , t bl_ i , t cu_ i , t cl_ i , wherein ivalue be 1 ~ n, 6 n+ 11 clamp diodes, 8 auxiliary capacitors c 1, c 2, c 3, c 4, c 5, c 6, c 7, c 8and 4 auxiliary IGBT module t 1, t 2, t 3, t 4, common formation is from all pressing subsidiary loop.
4. the distributed full-bridge of the auxiliary capacitor based on the inequality constraints MMC according to right 1 from all pressing topology, is characterized in that: during normal condition, from all pressing in subsidiary loop 6 nindividual IGBT module t au_ i , t al_ i , t bu_ i , t bl_ i , t cu_ i , t cl_ i normally closed, during failure condition, 6 nindividual IGBT module t au_ i , t al_ i , t bu_ i , t bl_ i , t cu_ i , t cl_ i disconnect, wherein ivalue be 1 ~ n; Under normal circumstances, brachium pontis first sub-module capacitance in A phase c- au-_1during bypass, now auxiliary IGBT module t 1disconnect, submodule electric capacity c -au-_1with auxiliary capacitor c 1in parallel by clamp diode; Brachium pontis in A phase iindividual sub-module capacitance c- au-_ i during bypass, wherein ivalue be 2 ~ n, submodule electric capacity c- au-_ i with submodule electric capacity c- au-_ i-1 in parallel by clamp diode; Lower brachium pontis first the sub-module capacitance of A phase c- al_1during bypass, submodule electric capacity c- al-_1by clamp diode, two brachium pontis reactors l 0with submodule electric capacity c- au-_ n in parallel; The lower brachium pontis of A phase the iindividual sub-module capacitance c -al_ i during bypass, wherein ivalue be 2 ~ n, submodule electric capacity c -al-_ i with submodule electric capacity c- al_ i-1 in parallel by clamp diode; Auxiliary IGBT module t 2time closed, auxiliary capacitor c 3by clamp diode and submodule electric capacity c- al_ n in parallel; Auxiliary IGBT module t 1time closed, auxiliary capacitor c 2with submodule electric capacity c- bu-_1in parallel by clamp diode; Brachium pontis in B phase iindividual sub-module capacitance c -bu-_ i during bypass, wherein ivalue be 1 ~ n-1, submodule electric capacity c- bu-_ i with submodule electric capacity c -bu-_ i+ 1 in parallel by clamp diode; Brachium pontis in B phase nindividual sub-module capacitance c -bu_ n during bypass, submodule electric capacity c -bu-_ n by clamp diode, two brachium pontis reactors l 0with submodule electric capacity c -bl-_1in parallel; The lower brachium pontis of B phase the iindividual sub-module capacitance c -bl_ i during bypass, wherein ivalue be 1 ~ n-1, submodule electric capacity c- bl-_ i with submodule electric capacity c- bl_ i+ 1 in parallel by clamp diode; The lower brachium pontis of B phase nindividual sub-module capacitance c- bl_ n during bypass, submodule electric capacity c- bl-_ n with auxiliary capacitor c- 4in parallel by clamp diode; Wherein auxiliary IGBT module t 1triggering signal consistent with the triggering signal of brachium pontis first submodule in A phase; Auxiliary IGBT module t 2the lower brachium pontis of triggering signal and B phase the nthe triggering signal of individual submodule is consistent; In the process of orthogonal stream energy conversion, each submodule alternately drops into, bypass, auxiliary IGBT module t 1, t 2be alternately closed, turn off, A phase upper and lower bridge arm submodule capacitor voltage, under the effect of clamp diode, meets lower column constraint, u c-1 >= u c-au_1 >= u c-au_2 >= u c-au_ n >= u c-al_1 >= u c-al_2 >= u c-al_ n >= u c-3 ; B phase upper and lower bridge arm submodule capacitor voltage, under the effect of clamp diode, meets lower column constraint, u c-2 ≤ u c-bu_1 ≤ u c-bu_2 ≤ u c-bu_ n ≤ u c-bl_1 ≤ u c-bl_2 ≤ u c-bl_ n ≤ u c-4 ; Against auxiliary capacitor c 1, c 2between voltage, auxiliary capacitor c 3, c 4two inequality constraintss between voltage, u c-1 ≤ u c-2 , u c-3 >= u c-4 , 4 of A, B phase upper and lower bridge arm nindividual sub-module capacitance, c au_ i , c al_ i , c bu_ i , c bl_ i , wherein ivalue is 1 ~ n, and auxiliary capacitor c 1, c 2, c 3, c 4, voltage be in self-balancing state, A, B of topology alternately possess submodule capacitor voltage from the ability of equalization; If the form of the composition of C phase is consistent with A in topology, then pass through auxiliary capacitor c 5, c 6, c 7, c 8effect, the constraints of C, B capacitive coupling voltage and between A, B capacitance voltage constraints similar; If the form of the composition of C phase is consistent with B in topology, then pass through auxiliary capacitor c 5, c 6, c 7, c 8effect, the constraints of A, C capacitive coupling voltage and between A, B capacitance voltage constraints similar, topology possesses submodule capacitor voltage from the ability of equalization; Realize on the basis of the single-phase flowing of capacitive energy between adjacent submodule mutually utilizing clamp diode; the alternate flowing relying on the inequality constraints between auxiliary capacitor to realize capacitive energy forms the peripheral passage of capacitive energy; and then keep alternate submodule capacitor voltage to stablize, be the protection content of this right.
5. the distributed full-bridge of the auxiliary capacitor based on the inequality constraints MMC according to right 1 is from all pressing topology, it is characterized in that: the distributed full-bridge MMC of the auxiliary capacitor based on inequality constraints is from all pressing topology, flexible direct-current transmission field can not only be directly applied to as multi-level voltage source current converter, also by forming STATCOM (STATCOM), Research on Unified Power Quality Conditioner (UPQC), the application of installations such as THE UPFC (UPFC) are in flexible AC transmission field; Other application scenarios of this invention topology of indirect utilization and thought are in interest field.
CN201610047423.8A 2016-01-25 2016-01-25 Auxiliary capacitor distribution full-bridge MMC based on inequality constraints is topological from pressure Expired - Fee Related CN105471306B (en)

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