CN105634318A - Inequality constraint-based half-bridge MMC self-equalizing topology employing distributed auxiliary capacitors - Google Patents

Inequality constraint-based half-bridge MMC self-equalizing topology employing distributed auxiliary capacitors Download PDF

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Publication number
CN105634318A
CN105634318A CN201610047427.6A CN201610047427A CN105634318A CN 105634318 A CN105634318 A CN 105634318A CN 201610047427 A CN201610047427 A CN 201610047427A CN 105634318 A CN105634318 A CN 105634318A
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China
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phase
brachium pontis
submodule
module
sub
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Inventor
许建中
赵成勇
刘航
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North China Electric Power University
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North China Electric Power University
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/483—Converters with outputs that each can have more than two voltages levels
    • H02M7/49—Combination of the output voltage waveforms of a plurality of converters
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/483—Converters with outputs that each can have more than two voltages levels
    • H02M7/4835—Converters with outputs that each can have more than two voltages levels comprising two or more cells, each including a switchable capacitor, the capacitors having a nominal charge voltage which corresponds to a given fraction of the input voltage, and the capacitors being selectively connected in series to determine the instantaneous output voltage
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/32—Means for protecting converters other than automatic disconnection
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/32—Means for protecting converters other than automatic disconnection
    • H02M1/325—Means for protecting converters other than automatic disconnection with means for allowing continuous operation despite a fault, i.e. fault tolerant converters

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Inverter Devices (AREA)
  • Power Conversion In General (AREA)

Abstract

The invention provides an inequality constraint-based half-bridge MMC self-equalizing topology employing distributed auxiliary capacitors. The half-bridge MMC self-equalizing topology is built by combination of a half-bridge MMC model and a self-equalizing auxiliary loop, wherein the half-bridge MMC model is electrically connected with the self-equalizing auxiliary loop through 6N mechanical switches in the self-equalizing auxiliary loop; the mechanical switches are closed; the half-bridge MMC model and the self-equalizing auxiliary loop form the inequality constraint-based half-bridge MMC self-equalizing topology employing the distributed auxiliary capacitors; the mechanical switches are opened; and the topology is equivalent to the half-bridge MMC topology. Under the condition of not emphasizing the difference between two topologies, the 6N mechanical switches in the self-equalizing auxiliary loop can be omitted and replaced with wires; the inequality constraint-based half-bridge MMC self-equalizing topology employing the distributed auxiliary capacitors is directly formed; and the half-bridge MMC self-equalizing topology is not dependent on special equalizing control, can spontaneously achieve capacitor voltage equalizing of sub-modules on the basis of finishing AC/DC energy conversion, simultaneously can correspondingly reduce the trigger frequencies and the capacitance values of the sub-modules and achieves fundamental frequency modulation of a half-bridge MMC.

Description

The distributed half-bridge MMC of auxiliary capacitor based on inequality constraints all presses topology certainly
Technical field
The present invention relates to flexible transmission field, be specifically related to the distributed half-bridge MMC of a kind of auxiliary capacitor based on inequality constraints from all pressing topology.
Background technology
Modularization multi-level converter MMC is the developing direction of following HVDC Transmission Technology, MMC adopts submodule (Sub-module, SM) mode of cascade constructs converter valve, avoid the direct series connection of big metering device, reduce the conforming requirement of device, simultaneously facilitate dilatation and redundant configuration. Along with the rising of level number, output waveform, close to sinusoidal, can effectively avoid the defect of low level VSC-HVDC.
Half-bridge MMC is combined by half-bridge submodule, and half-bridge submodule is made up of 2 IGBT module, 1 sub-module capacitance, 1 IGCT and 1 mechanical switch, and cost is low, and running wastage is little.
Different from two level, three level VSC, the DC voltage of half-bridge MMC is not supported by a bulky capacitor, but is supported by a series of separate suspension submodule capacitances in series. In order to ensure that the waveform quality that AC voltage exports bears identical stress with each power semiconductor in guarantee module, also for better supporting DC voltage, reduce alternate circulation, it is necessary to assure submodule capacitor voltage is in the state of dynamic stability at the periodic current disorder of internal organs of brachium pontis power.
Sequence based on capacitance voltage sequence all presses algorithm to be solve the main flow thinking of half-bridge submodule capacitor voltage equalization problem in half-bridge MMC at present, the good all pressures effect of this scheme can be verified in emulation and practice, but is also constantly expose its some inherent shortcomings. First, the realization of ranking function has to rely on the Millisecond sampling of capacitance voltage, it is necessary to substantial amounts of sensor and optical-fibre channel are coordinated; Secondly, when half-bridge submodule number increases, the operand of capacitance voltage sequence increases rapidly, and the hardware designs for controller brings huge challenge; Additionally, the frequency of cut-offfing of submodule is had significantly high requirement by the realization of sequence all pressure algorithms, cut-off frequency and be closely related with all pressure effects, in practice process, probably due to all press the restriction of effect, it has to improve the triggering frequency of submodule, and then bring the increase of inverter loss.
Document " ADC-LinkVoltageSelf-BalanceMethodforaDiode-ClampedModula rMultilevelConverterWithMinimumNumberofVoltageSensors ", it is proposed that a kind of rely on clamp diode and transformator to realize the thinking that MMC submodule capacitor voltage is balanced. But the program to a certain degree destroys the modular nature of submodule in design, submodule capacitive energy interchange channel is also confined in mutually, could not making full use of the existing structure of MMC, being introduced in of three transformators makes control strategy also bring along bigger improvement cost while complicating.
Summary of the invention
For the problems referred to above, it is an object of the invention to propose a kind of economy, modular, it is independent of all pressing algorithm, submodule can be reduced simultaneously accordingly and trigger the half-bridge MMC of frequency and capacitor's capacity from all pressing topology.
The constituted mode that the present invention is concrete is as follows.
The distributed half-bridge MMC of auxiliary capacitor based on inequality constraints all presses topology certainly, and including the half-bridge MMC model being made up of A, B, C three-phase, A, B, C three-phase is respectively by 2NIndividual half-bridge submodule, 2 brachium pontis reactors are in series; Including by 6NIndividual mechanical switch, 6N+ 11 clamp diodes, 8 auxiliary capacitors, 4 auxiliary IGBT module compositions from all pressing subsidiary loop.
The distributed half-bridge MMC of the above-mentioned auxiliary capacitor based on inequality constraints is from all pressing topology, 1st submodule of brachium pontis in A phase, its submodule electric capacity negative pole is connected with the 2nd of brachium pontis module I GBT module midpoint in A phase downwards, and its submodule IGBT module midpoint is upwards connected with dc bus positive pole; In A phase the of brachium pontisiIndividual submodule, whereiniValue be 2��N-1, its submodule electric capacity negative pole is downwards with in A phase the of brachium pontisi+ 1 sub-module I GBT module midpoint is connected, and its submodule IGBT module midpoint is upwards with in A phase the of brachium pontisi-1 sub-module capacitance negative pole is connected; In A phase the of brachium pontisNIndividual submodule, its submodule electric capacity negative pole is connected down through the 1st sub-module I GBT module midpoint of the lower brachium pontis of two brachium pontis reactors and A phase, and its submodule IGBT module midpoint is upwards with in A phase the of brachium pontisN-1 sub-module capacitance negative pole is connected; The of the lower brachium pontis of A phaseiIndividual submodule, whereiniValue be 2��N-1, its submodule electric capacity negative pole is downwards with the of A phase time brachium pontisi+ 1 sub-module I GBT module midpoint is connected, and its IGBT module midpoint is upwards with the of the lower brachium pontis of A phasei-1 sub-module capacitance negative pole is connected; The of the lower brachium pontis of A phaseNIndividual submodule, its submodule electric capacity negative pole is connected with dc bus negative pole downwards, and its submodule IGBT module midpoint is upwards with the of the lower brachium pontis of A phaseN-1 sub-module capacitance negative pole is connected; 1st submodule of brachium pontis in B phase, its submodule capacitance cathode is upwards connected with dc bus positive pole, and its submodule IGBT module midpoint is connected with the 2nd sub-module capacitance positive pole of brachium pontis in B phase downwards; In B phase the of brachium pontisiIndividual submodule, whereiniValue be 2��N-1, its submodule capacitance cathode is upwards with in B phase the of brachium pontisi-1 sub-module I GBT module midpoint is connected, and its submodule IGBT module midpoint is downwards with in B phase the of brachium pontisi+ 1 sub-module capacitance positive pole is connected; In B phase the of brachium pontisNIndividual submodule, its submodule capacitance cathode is upwards with in B phase the of brachium pontisN-1 sub-module I GBT module midpoint is connected, and its submodule IGBT module midpoint is connected down through the 1st sub-module capacitance positive pole of the lower brachium pontis of two brachium pontis reactors and B phase; The of the lower brachium pontis of B phaseiIndividual submodule, whereiniValue be 2��N-1, its submodule capacitance cathode is upwards with the of the lower brachium pontis of B phasei-1 sub-module I GBT module midpoint is connected, and its submodule IGBT module midpoint is downwards with the of B phase time brachium pontisi+ 1 sub-module capacitance positive pole is connected; The of the lower brachium pontis of B phaseNIndividual submodule, its submodule capacitance cathode upwards with the lower brachium pontis of B phase theN-1 sub-module I GBT module midpoint is connected, and its submodule IGBT module midpoint is connected with dc bus negative pole downwards; The connected mode of C phase upper and lower bridge arm submodule is consistent with A phase or B.
The distributed half-bridge MMC of the above-mentioned auxiliary capacitor based on inequality constraints is from all pressing topology, from all pressing in subsidiary loop, first auxiliary capacitor and second auxiliary capacitor are in parallel by clamp diode, and second auxiliary capacitor positive pole connects first auxiliary capacitor negative pole connection clamp diode of auxiliary IGBT module and be incorporated to dc bus positive pole; 3rd auxiliary capacitor and the 4th auxiliary capacitor are in parallel by clamp diode, and the 3rd auxiliary capacitor negative pole connects the 4th auxiliary capacitor positive pole connection clamp diode of auxiliary IGBT module and be incorporated to dc bus negative pole; 5th auxiliary capacitor and the 6th auxiliary capacitor are in parallel by clamp diode, and the 5th auxiliary capacitor positive pole connects the 6th auxiliary capacitor negative pole connection clamp diode of auxiliary IGBT module and be incorporated to dc bus positive pole; 7th auxiliary capacitor and the 8th auxiliary capacitor are in parallel by clamp diode, and the 8th auxiliary capacitor negative pole connects the 7th auxiliary capacitor positive pole connection clamp diode of auxiliary IGBT module and be incorporated to dc bus negative pole. Clamp diode, by the 1st sub-module capacitance and first auxiliary capacitor positive pole in brachium pontis in mechanical switch connection A phase; The is connected in A phase in brachium pontis by mechanical switchiIndividual sub-module capacitance and thei+ 1 sub-module capacitance positive pole, whereiniValue be 1��N-1; The is connected in A phase in brachium pontis by mechanical switchNIndividual sub-module capacitance brachium pontis 1st sub-module capacitance positive pole lower to A phase; The is connected in the lower brachium pontis of A phase by mechanical switchiThe lower brachium pontis of individual sub-module capacitance and A phase thei+ 1 sub-module capacitance positive pole, wherein the value of i be 1��N-1; The is connected in the lower brachium pontis of A phase by mechanical switchNIndividual sub-module capacitance and the 3rd auxiliary capacitor positive pole. Clamp diode, by second sub-module capacitance and first auxiliary capacitor negative pole in brachium pontis in mechanical switch connection B phase; The is connected in B phase in brachium pontis by mechanical switchiIndividual sub-module capacitance and thei+ 1 sub-module capacitance negative pole, whereiniValue be 1��N-1; The is connected in B phase in brachium pontis by mechanical switchNIndividual sub-module capacitance brachium pontis 1st sub-module capacitance negative pole lower to B phase; The is connected in the lower brachium pontis of B phase by mechanical switchiThe lower brachium pontis of individual sub-module capacitance and B phase thei+ 1 sub-module capacitance negative pole, whereiniValue be 1��N-1; The is connected in the lower brachium pontis of B phase by mechanical switchNIndividual sub-module capacitance and the 4th auxiliary capacitor negative pole. When the annexation of C phase submodule is consistent with A, between C phase upper and lower bridge arm Neutron module, the connected mode of clamp diode is consistent with A, 6th auxiliary capacitor positive pole connects the sub-module capacitance positive pole of brachium pontis first in C phase through mechanical switch, clamp diode simultaneously, 5th auxiliary capacitor negative pole connects the upper sub-module capacitance negative pole of brachium pontis first of B phase through mechanical switch, clamp diode, and the 8th auxiliary capacitor positive pole connects C phase time brachium pontis the through mechanical switch, clamp diodeNIndividual sub-module capacitance positive pole, the 7th auxiliary capacitor negative pole connects the lower brachium pontis of B phase the through mechanical switch, clamp diodeNIndividual sub-module capacitance negative pole; When the annexation of C phase submodule is consistent with B, between C phase upper and lower bridge arm Neutron module, the connected mode of clamp diode is consistent with B, 5th auxiliary capacitor negative pole connects the sub-module capacitance negative pole of brachium pontis first in C phase through mechanical switch, clamp diode simultaneously, 6th auxiliary capacitor positive pole connects the upper sub-module capacitance positive pole of brachium pontis first of A phase through mechanical switch, clamp diode, and the 7th auxiliary capacitor negative pole connects C phase time brachium pontis the through mechanical switch, clamp diodeNIndividual sub-module capacitance negative pole, the 8th auxiliary capacitor positive pole connects the lower brachium pontis of A phase the through mechanical switch, clamp diodeNIndividual sub-module capacitance positive pole.
Accompanying drawing explanation
Fig. 1 is the structural representation of half-bridge submodule;
Fig. 2 is based on the distributed half-bridge MMC of auxiliary capacitor of inequality constraints from all pressing topology.
Detailed description of the invention
For performance and the operation principle of the present invention are expanded on further, it is specifically described to the constituted mode invented and operation principle below in conjunction with accompanying drawing. But the half-bridge MMC based on this principle is not limited to Fig. 2 from all pressure topologys.
With reference to Fig. 2, based on the distributed half-bridge MMC of auxiliary capacitor of inequality constraints from all pressing topology, including the half-bridge MMC model being made up of A, B, C three-phase, each brachium pontis of A, B, C three-phase respectively byNIndividual half-bridge submodule and 1 brachium pontis reactor are in series; Including by 6NIndividual mechanical switch, 6N+ 11 clamp diodes, 8 auxiliary capacitors, 4 auxiliary IGBT module compositions from all pressing subsidiary loop.
In half-bridge MMC model, the 1st submodule of brachium pontis, its submodule electric capacity in A phaseC -au-_1Negative pole is connected with the 2nd of brachium pontis module I GBT module midpoint in A phase downwards, and its submodule IGBT module midpoint is upwards connected with dc bus positive pole; In A phase the of brachium pontisiIndividual submodule, whereiniValue be 2��N-1, its submodule electric capacityC- au-_i Negative pole is downwards with in A phase the of brachium pontisi+ 1 sub-module I GBT module midpoint is connected, and its submodule IGBT module midpoint is upwards with in A phase the of brachium pontisi-1 sub-module capacitanceC-au-_i-1Negative pole is connected; In A phase the of brachium pontisNIndividual submodule, its submodule electric capacityC -au-_N Negative pole is down through two brachium pontis reactorsL 0Being connected with the 1st sub-module I GBT module midpoint of the lower brachium pontis of A phase, its submodule IGBT module midpoint is upwards with in A phase the of brachium pontisN-1 sub-module capacitanceC -au-_N-1Negative pole is connected; The of the lower brachium pontis of A phaseiIndividual submodule, whereiniValue be 2��N-1, its submodule electric capacityC-al-_i Negative pole is downwards with the of A phase time brachium pontisi+ 1 sub-module I GBT module midpoint is connected, and its IGBT module midpoint is upwards with the of the lower brachium pontis of A phasei-1 sub-module capacitanceC -al-_i-1Negative pole is connected; The of the lower brachium pontis of A phaseNIndividual submodule, its submodule electric capacityC -al_N Negative pole is connected with dc bus negative pole downwards, and its submodule IGBT module midpoint is upwards with the of the lower brachium pontis of A phaseN-1 sub-module capacitanceC -al-_N-1Negative pole is connected; 1st submodule of brachium pontis, its submodule electric capacity in B phaseC- bu-_1Positive pole is upwards connected with dc bus positive pole, its submodule IGBT module midpoint downwards with the 2nd sub-module capacitance of brachium pontis in B phaseC-bu-_2Positive pole is connected; In B phase the of brachium pontisiIndividual submodule, whereiniValue be 2��N-1, its submodule electric capacityC-bu-_i Positive pole is upwards with in B phase the of brachium pontisi-1 sub-module I GBT module midpoint is connected, and its submodule IGBT module midpoint is downwards with in B phase the of brachium pontisi+ 1 sub-module capacitanceC- bu-_i+1Positive pole is connected; In B phase the of brachium pontisNIndividual submodule, its submodule electric capacityC -bu-_N Positive pole is upwards with in B phase the of brachium pontisN-1 sub-module I GBT module midpoint is connected, and its submodule IGBT module midpoint is down through two brachium pontis reactorsL 0The 1st the sub-module capacitance with the lower brachium pontis of B phaseC -bl-_1Positive pole is connected; The of the lower brachium pontis of B phaseiIndividual submodule, whereiniValue be 2��N-1, its submodule electric capacityC- bl_i Positive pole is upwards with the of the lower brachium pontis of B phasei-1 sub-module I GBT module midpoint is connected, and its submodule IGBT module midpoint is downwards with the of B phase time brachium pontisi+ 1 sub-module capacitanceC- bl-_i+1Positive pole is connected; The of the lower brachium pontis of B phaseNIndividual submodule, its submodule electric capacityC-bl_N Positive pole upwards with the lower brachium pontis of B phase theN-1 sub-module I GBT module midpoint is connected, and its submodule IGBT module midpoint is connected with dc bus negative pole downwards. The connected mode of C phase upper and lower bridge arm submodule is consistent with A.
From all pressing in subsidiary loop, in all pressure subsidiary loops, auxiliary capacitorC 1With auxiliary capacitorC 2In parallel by clamp diode, auxiliary capacitorC 2Positive pole connects auxiliary IGBT moduleT 1, auxiliary capacitorC 1Negative pole connects clamp diode and is incorporated to dc bus positive pole; Auxiliary capacitorC 3With auxiliary capacitorC 4In parallel by clamp diode, auxiliary capacitorC 3Negative pole connects auxiliary IGBT moduleT 2, auxiliary capacitorC 4Positive pole connects clamp diode and is incorporated to dc bus negative pole; Auxiliary capacitorC 5With auxiliary capacitorC 6In parallel by clamp diode, auxiliary capacitorC 5Positive pole connects auxiliary IGBT moduleT 3, auxiliary capacitorC 6Negative pole connects clamp diode and is incorporated to dc bus positive pole; Auxiliary capacitorC 7With auxiliary capacitorC 8In parallel by clamp diode, auxiliary capacitorC 8Negative pole connects auxiliary IGBT moduleT 4, auxiliary capacitorC 7Positive pole connects clamp diode and is incorporated to dc bus negative pole. Clamp diode, passes through mechanical switchK au_131st sub-module capacitance in brachium pontis in connection A phaseC- au-_1With auxiliary capacitorC 1Positive pole; Pass through mechanical switchK au_i3��K Au_(i+ 1) 3Connect in A phase in brachium pontis theiIndividual sub-module capacitanceC-au-_i Withi+ 1 sub-module capacitanceC-au-_i+1Positive pole, whereiniValue be 1��N-1; Pass through mechanical switchK au_N3��K al_13Connect in A phase in brachium pontis theNIndividual sub-module capacitanceC -au-_N Brachium pontis 1st sub-module capacitance lower to A phaseC-al-_1Positive pole; Pass through mechanical switchK al_i3��K Al_(i+ 1) 3Connect in the lower brachium pontis of A phase theiIndividual sub-module capacitanceC -al-_i With the lower brachium pontis of A phase thei+ 1 sub-module capacitanceC -al-_i+1Positive pole, whereiniValue be 1��N-1; Pass through mechanical switchK al_N3Connect in the lower brachium pontis of A phase theNIndividual sub-module capacitanceC-al_N With auxiliary capacitorC 3Positive pole. Clamp diode, passes through mechanical switchK bu_131st sub-module capacitance in brachium pontis in connection B phaseC -bu-_1With auxiliary capacitorC 2, auxiliary capacitorC 5Negative pole; Pass through mechanical switchK bu_i3��K Bu_(i+ 1) 3Connect in B phase in brachium pontis theiIndividual sub-module capacitanceC-bu-_i Withi+ 1 sub-module capacitanceC -bu-_i+1Negative pole, whereiniValue be 1��N-1; Pass through mechanical switchK bu_N3��K bl_13Connect in B phase in brachium pontis theNIndividual sub-module capacitanceC -bu-_N Brachium pontis 1st sub-module capacitance lower to B phaseC -bl-_1Negative pole; Pass through mechanical switchK bl_i3��K Bl_(i+ 1) 3Connect in the lower brachium pontis of B phase theiIndividual sub-module capacitanceC -bl-_i With the lower brachium pontis of B phase thei+ 1 sub-module capacitanceC -bl-_i+1Negative pole, whereiniValue be 1��N-1; Pass through mechanical switchK bl_N3Connect in the lower brachium pontis of B phase theNIndividual sub-module capacitanceC-bl-_N With auxiliary capacitorC 4, auxiliary capacitorC 7Negative pole. Auxiliary capacitorC 6Positive pole is through mechanical switchK cu_13, clamp diode connect first sub-module capacitance of brachium pontis in C phaseC cu_1Positive pole; Auxiliary capacitorC 8Positive pole is through mechanical switchK cl_N3 , clamp diode connect the lower brachium pontis of C phase theNIndividual sub-module capacitanceC cl_N Positive pole.
From all pressing in subsidiary loop 6NIndividual mechanical switchK au_i3��K al_i3��K bu_i3��K bl_i3��K cu_i3��K cl_i3Normally closed, whereiniValue be 1��N. First sub-module capacitance of brachium pontis in A phaseC-au-_1During bypass, now assist IGBT moduleT 1Disconnect, submodule electric capacityC -au-_1With auxiliary capacitorC 1In parallel by clamp diode; Brachium pontis in A phaseiIndividual sub-module capacitanceC -au-_i During bypass, whereiniValue be 2��N, submodule electric capacityC-au-_i With submodule electric capacityC-au-_i-1In parallel by clamp diode; Lower first the sub-module capacitance of brachium pontis of A phaseC- al_1During bypass, submodule electric capacityC- al-_1By clamp diode, two brachium pontis reactorsL 0With submodule electric capacityC-au-_N In parallel; The lower brachium pontis of A phase theiIndividual sub-module capacitanceC-al_i During bypass, whereiniValue be 2��N, submodule electric capacityC -al-_i With submodule electric capacityC- al_i-1In parallel by clamp diode; Auxiliary IGBT moduleT 2During Guan Bi, auxiliary capacitorC 3By clamp diode and submodule electric capacityC -al_N In parallel.
From all pressing in subsidiary loop 6NIndividual mechanical switchK au_i3��K al_i3��K bu_i3��K bl_i3��K cu_i3��K cl_i3Normally closed, whereiniValue be 1��N. Auxiliary IGBT moduleT 1During Guan Bi, auxiliary capacitorC 2With submodule electric capacityC-bu-_1In parallel by clamp diode; Brachium pontis in B phaseiIndividual sub-module capacitanceC-bu-_i During bypass, whereiniValue be 1��N-1, submodule electric capacityC-bu-_i With submodule electric capacityC-bu-_i+1In parallel by clamp diode; Brachium pontis in B phaseNIndividual sub-module capacitanceC-bu_N During bypass, submodule electric capacityC- bu-_N By clamp diode, two brachium pontis reactorsL 0With submodule electric capacityC- bl-_1In parallel; The lower brachium pontis of B phase theiIndividual sub-module capacitanceC-bl_i During bypass, whereiniValue be 1��N-1, submodule electric capacityC-bl-_i With submodule electric capacityC- bl_i+1In parallel by clamp diode; The lower brachium pontis of B phaseNIndividual sub-module capacitanceC-bl_N During bypass, submodule electric capacityC -bl-_N With auxiliary capacitorC- 4In parallel by clamp diode.
Above-mentioned auxiliary IGBT moduleT 1Trigger signal consistent with the triggering signal of first submodule of brachium pontis in A phase; Auxiliary IGBT moduleT 2The lower brachium pontis of triggering signal and B phase theNThe triggering signal of individual submodule is consistent. In the process of orthogonal stream energy conversion, each submodule alternately puts into, bypass, assists IGBT moduleT 1��T 2Being alternately closed, turn off, between A, B phase upper and lower bridge arm, capacitance voltage is under the effect of clamp diode, meets lower column constraint:
Auxiliary capacitorC 1��C 2Between voltage, auxiliary capacitorC 3��C 4Inequality constraints condition is there is between voltage:
It follows that half-bridge MMC is in the dynamic process completing the conversion of orthogonal stream energy, meet following constraints:
In like manner, B, C phase upper and lower bridge arm submodule capacitor voltage meets following constraints:
Illustrated it can be seen that this half-bridge MMC topology possesses submodule capacitor voltage from the ability of equalization by above-mentioned.
Finally should be noted that: described embodiment is only some embodiments of the present application, rather than whole embodiments. Based on the embodiment in the application, the every other embodiment that those of ordinary skill in the art obtain under not making creative work premise, broadly fall into the scope of the application protection.

Claims (5)

1. based on the distributed half-bridge MMC of the auxiliary capacitor of inequality constraints from all pressing topology, it is characterised in that: including the half-bridge MMC model being made up of A, B, C three-phase, A, B, C three-phase is respectively by 2NIndividual half-bridge submodule, 2 brachium pontis reactors are in series; Including by 6NIndividual mechanical switch, 6N+ 11 clamp diodes, 8 auxiliary capacitorsC 1��C 2��C 3��C 4��C 5��C 6��C 7��C 8, 4 auxiliary IGBT moduleT 1��T 2��T 3��T 4What constitute all presses subsidiary loop certainly.
2. the distributed half-bridge MMC of the auxiliary capacitor based on inequality constraints according to right 1 is from all pressing topology, it is characterised in that: the 1st submodule of brachium pontis, its submodule electric capacity in A phaseC -au-_1Negative pole is connected with the 2nd of brachium pontis module I GBT module midpoint in A phase downwards, and its submodule IGBT module midpoint is upwards connected with dc bus positive pole; In A phase the of brachium pontisiIndividual submodule, whereiniValue be 2��N-1, its submodule electric capacityC- au-_i Negative pole is downwards with in A phase the of brachium pontisi+ 1 sub-module I GBT module midpoint is connected, and its submodule IGBT module midpoint is upwards with in A phase the of brachium pontisi-1 sub-module capacitanceC-au-_i-1Negative pole is connected; In A phase the of brachium pontisNIndividual submodule, its submodule electric capacityC -au-_N Negative pole is down through two brachium pontis reactorsL 0Being connected with the 1st sub-module I GBT module midpoint of the lower brachium pontis of A phase, its submodule IGBT module midpoint is upwards with in A phase the of brachium pontisN-1 sub-module capacitanceC -au-_N-1Negative pole is connected; The of the lower brachium pontis of A phaseiIndividual submodule, whereiniValue be 2��N-1, its submodule electric capacityC-al-_i Negative pole is downwards with the of A phase time brachium pontisi+ 1 sub-module I GBT module midpoint is connected, and its IGBT module midpoint is upwards with the of the lower brachium pontis of A phasei-1 sub-module capacitanceC -al-_i-1Negative pole is connected; The of the lower brachium pontis of A phaseNIndividual submodule, its submodule electric capacityC -al_N Negative pole is connected with dc bus negative pole downwards, and its submodule IGBT module midpoint is upwards with the of the lower brachium pontis of A phaseN-1 sub-module capacitanceC -al-_N-1Negative pole is connected; 1st submodule of brachium pontis, its submodule electric capacity in B phaseC- bu-_1Positive pole is upwards connected with dc bus positive pole, its submodule IGBT module midpoint downwards with the 2nd sub-module capacitance of brachium pontis in B phaseC-bu-_2Positive pole is connected; In B phase the of brachium pontisiIndividual submodule, whereiniValue be 2��N-1, its submodule electric capacityC-bu-_i Positive pole is upwards with in B phase the of brachium pontisi-1 sub-module I GBT module midpoint is connected, and its submodule IGBT module midpoint is downwards with in B phase the of brachium pontisi+ 1 sub-module capacitanceC- bu-_i+1Positive pole is connected; In B phase the of brachium pontisNIndividual submodule, its submodule electric capacityC -bu-_N Positive pole is upwards with in B phase the of brachium pontisN-1 sub-module I GBT module midpoint is connected, and its submodule IGBT module midpoint is down through two brachium pontis reactorsL 0The 1st the sub-module capacitance with the lower brachium pontis of B phaseC -bl-_1Positive pole is connected; The of the lower brachium pontis of B phaseiIndividual submodule, whereiniValue be 2��N-1, its submodule electric capacityC- bl_i Positive pole is upwards with the of the lower brachium pontis of B phasei-1 sub-module I GBT module midpoint is connected, and its submodule IGBT module midpoint is downwards with the of B phase time brachium pontisi+ 1 sub-module capacitanceC- bl-_i+1Positive pole is connected; The of the lower brachium pontis of B phaseNIndividual submodule, its submodule electric capacityC-bl_N Positive pole upwards with the lower brachium pontis of B phase theN-1 sub-module I GBT module midpoint is connected, and its submodule IGBT module midpoint is connected with dc bus negative pole downwards; The connected mode of C phase upper and lower bridge arm submodule can be consistent with A, it is also possible to consistent with B; At A, B, C phase upper and lower bridge armiIndividual submodule be parallel with mechanical switch up and down between output lead respectivelyK au_i1��K al_i1��K bu_i1��K bl_i1��K cu_i1��K cl_i1, and IGCTK au_i2��K al_i2��K bu_i2��K bl_i2��K cu_i2��K cl_i2, whereiniValue be 1��N; A, B, C three-phase status that above-mentioned annexation is constituted is consistent, and other topologys after three-phase symmetrized in turn are in interest field.
3. the distributed half-bridge MMC of the auxiliary capacitor based on inequality constraints according to right 1 is from all pressing topology, it is characterised in that: in all pressure subsidiary loops, auxiliary capacitorC 1With auxiliary capacitorC 2In parallel by clamp diode, auxiliary capacitorC 2Positive pole connects auxiliary IGBT moduleT 1, auxiliary capacitorC 1Negative pole connects clamp diode and is incorporated to dc bus positive pole; Auxiliary capacitorC 3With auxiliary capacitorC 4In parallel by clamp diode, auxiliary capacitorC 3Negative pole connects auxiliary IGBT moduleT 2, auxiliary capacitorC 4Positive pole connects clamp diode and is incorporated to dc bus negative pole; Auxiliary capacitorC 5With auxiliary capacitorC 6In parallel by clamp diode, auxiliary capacitorC 5Positive pole connects auxiliary IGBT moduleT 3, auxiliary capacitorC 6Negative pole connects clamp diode and is incorporated to dc bus positive pole; Auxiliary capacitorC 7With auxiliary capacitorC 8In parallel by clamp diode, auxiliary capacitorC 8Negative pole connects auxiliary IGBT moduleT 4, auxiliary capacitorC 7Positive pole connects clamp diode and is incorporated to dc bus negative pole; Clamp diode, passes through mechanical switchK au_131st sub-module capacitance in brachium pontis in connection A phaseC- au-_1With auxiliary capacitorC 1Positive pole; Pass through mechanical switchK au_i3��K Au_(i+ 1) 3Connect in A phase in brachium pontis theiIndividual sub-module capacitanceC-au-_i Withi+ 1 sub-module capacitanceC-au-_i+1Positive pole, whereiniValue be 1��N-1; Pass through mechanical switchK au_N3��K al_13Connect in A phase in brachium pontis theNIndividual sub-module capacitanceC -au-_N Brachium pontis 1st sub-module capacitance lower to A phaseC-al-_1Positive pole; Pass through mechanical switchK al_i3��K Al_(i+ 1) 3Connect in the lower brachium pontis of A phase theiIndividual sub-module capacitanceC -al-_i With the lower brachium pontis of A phase thei+ 1 sub-module capacitanceC -al-_i+1Positive pole, whereiniValue be 1��N-1; Pass through mechanical switchK al_N3Connect in the lower brachium pontis of A phase theNIndividual sub-module capacitanceC-al_N With auxiliary capacitorC 3Positive pole; Clamp diode, passes through mechanical switchK bu_131st sub-module capacitance in brachium pontis in connection B phaseC -bu-_1With auxiliary capacitorC 2Negative pole; Pass through mechanical switchK bu_i3��K Bu_(i+ 1) 3Connect in B phase in brachium pontis theiIndividual sub-module capacitanceC-bu-_i Withi+ 1 sub-module capacitanceC -bu-_i+1Negative pole, whereiniValue be 1��N-1; Pass through mechanical switchK bu_N3��K bl_13Connect in B phase in brachium pontis theNIndividual sub-module capacitanceC -bu-_N Brachium pontis 1st sub-module capacitance lower to B phaseC -bl-_1Negative pole; Pass through mechanical switchK bl_i3��K Bl_(i+ 1) 3Connect in the lower brachium pontis of B phase theiIndividual sub-module capacitanceC -bl-_i With the lower brachium pontis of B phase thei+ 1 sub-module capacitanceC -bl-_i+1Negative pole, whereiniValue be 1��N-1; Pass through mechanical switchK bl_N3Connect in the lower brachium pontis of B phase theNIndividual sub-module capacitanceC-bl-_N With auxiliary capacitorC 4Negative pole; When the annexation of C phase submodule is consistent with A, between C phase upper and lower bridge arm Neutron module, the connected mode of clamp diode is consistent with A, simultaneously auxiliary capacitorC 6Positive pole is through mechanical switchK cu_13, clamp diode connect first sub-module capacitance of brachium pontis in C phaseC cu_1Positive pole, auxiliary capacitorC 5Negative pole is through mechanical switchK bu_13, clamp diode connect first sub-module capacitance of brachium pontis in B phaseC bu_1Negative pole, auxiliary capacitorC 8Positive pole is through mechanical switchK cl_N3 , clamp diode connect the lower brachium pontis of C phase theNIndividual sub-module capacitanceC cl_N Positive pole, auxiliary capacitorC 7Negative pole is through mechanical switchK bl_N3 , clamp diode connect the lower brachium pontis of B phase theNIndividual sub-module capacitanceC bl_N Negative pole; When the annexation of C phase submodule is consistent with B, between C phase upper and lower bridge arm Neutron module, the connected mode of clamp diode is consistent with B, simultaneously auxiliary capacitorC 5Negative pole is through mechanical switchK cu_13, clamp diode connect first sub-module capacitance of brachium pontis in C phaseC cu_1Negative pole, auxiliary capacitorC 6Positive pole is through mechanical switchK au_13, clamp diode connect first sub-module capacitance of brachium pontis in A phaseC au_1Positive pole, auxiliary capacitorC 7Negative pole is through mechanical switchK cl_N3 , clamp diode connect the lower brachium pontis of C phase theNIndividual sub-module capacitanceC cl_N Negative pole, auxiliary capacitorC 8Positive pole is through mechanical switchK al_N3 , clamp diode connect the lower brachium pontis of A phase theNIndividual sub-module capacitanceC al_N Positive pole; In above-mentioned A, B, C three-phase 6NIndividual mechanical switchK au_i3��K al_i3��K bu_i3��K bl_i3��K cu_i3��K cl_i3, whereiniValue be 1��N, 6N+ 11 clamp diodes, 8 auxiliary capacitorsC 1��C 2��C 3��C 4��C 5��C 6��C 7��C 8And 4 auxiliary IGBT moduleT 1��T 2��T 3��T 4, collectively form from all pressing subsidiary loop.
4. the distributed half-bridge MMC of the auxiliary capacitor based on inequality constraints according to right 1 is from all pressing topology, it is characterised in that: in all pressure subsidiary loops 6NIndividual mechanical switchK au_i3��K al_i3��K bu_i3��K bl_i3��K cu_i3��K cl_i3Normally closed, whereiniValue be 1��N; First sub-module capacitance of brachium pontis in A phaseC-au-_1During bypass, now assist IGBT moduleT 1Disconnect, submodule electric capacityC- au-_1With auxiliary capacitorC 1In parallel by clamp diode; Brachium pontis in A phaseiIndividual sub-module capacitanceC-au-_i During bypass, whereiniValue be 2��N, submodule electric capacityC-au-_i With submodule electric capacityC-au-_i-1In parallel by clamp diode; Lower first the sub-module capacitance of brachium pontis of A phaseC -al_1During bypass, submodule electric capacityC-al-_1By clamp diode, two brachium pontis reactorsL 0With submodule electric capacityC- au-_N In parallel; The lower brachium pontis of A phase theiIndividual sub-module capacitanceC -al_i During bypass, whereiniValue be 2��N, submodule electric capacityC-al-_i With submodule electric capacityC-al_i-1In parallel by clamp diode; Auxiliary IGBT moduleT 2During Guan Bi, auxiliary capacitorC 3By clamp diode and submodule electric capacityC -al_N In parallel; Auxiliary IGBT moduleT 1During Guan Bi, auxiliary capacitorC 2With submodule electric capacityC-bu-_1In parallel by clamp diode; Brachium pontis in B phaseiIndividual sub-module capacitanceC-bu-_i During bypass, whereiniValue be 1��N-1, submodule electric capacityC-bu-_i With submodule electric capacityC-bu-_i+1In parallel by clamp diode; Brachium pontis in B phaseNIndividual sub-module capacitanceC-bu_N During bypass, submodule electric capacityC- bu-_N By clamp diode, two brachium pontis reactorsL 0With submodule electric capacityC- bl-_1In parallel; The lower brachium pontis of B phase theiIndividual sub-module capacitanceC-bl_i During bypass, whereiniValue be 1��N-1, submodule electric capacityC-bl-_i With submodule electric capacityC- bl_i+1In parallel by clamp diode; The lower brachium pontis of B phaseNIndividual sub-module capacitanceC-bl_N During bypass, submodule electric capacityC -bl-_N With auxiliary capacitorC- 4In parallel by clamp diode; Wherein assist IGBT moduleT 1Trigger signal consistent with the triggering signal of first submodule of brachium pontis in A phase; Auxiliary IGBT moduleT 2The lower brachium pontis of triggering signal and B phase theNThe triggering signal of individual submodule is consistent; In the process of orthogonal stream energy conversion, each submodule alternately puts into, bypass, assists IGBT moduleT 1��T 2Being alternately closed, turn off, A phase upper and lower bridge arm submodule capacitor voltage, under the effect of clamp diode, meets lower column constraint,U C1��U C-au_1��U C-au_2����U C-au_N ��U C-al_1��U C-al_2����U C-al_N ��U C3; B phase upper and lower bridge arm submodule capacitor voltage, under the effect of clamp diode, meets lower column constraint,U C2��U C-bu_1��U C-bu_2����U C-bu_N ��U C-bl_1��U C-bl_2����U C-bl_N ��U C4; Against auxiliary capacitorC 1��C 2Between voltage, auxiliary capacitorC 3��C 4Two inequality constraints between voltage,U C1��U C2,U C3��U C4, in A, B phase upper and lower bridge arm 4NIndividual sub-module capacitance,C au_i ��Cal_i ��C bu_i ��C bl_i , whereiniValue is 1��N, and auxiliary capacitorC 1��C 2��C 3��C 4, voltage be in self-balancing state, A, B are alternate possesses submodule capacitor voltage from the ability of equalization for topology; If the form of the composition of C phase is consistent with A in topology, then pass through auxiliary capacitorC 5��C 6��C 7��C 8Effect, the constraints of C, B capacitive coupling voltage is similar with capacitance voltage constraints between A, B; If the form of the composition of C phase is consistent with B in topology, then pass through auxiliary capacitorC 5��C 6��C 7��C 8Effect, the constraints of A, C capacitive coupling voltage is similar with capacitance voltage constraints between A, B, and topology possesses submodule capacitor voltage from the ability of equalization; Realize in mutually between adjacent submodule on the basis of capacitive energy single-phase flow utilizing clamp diode; rely on the inequality constraints between auxiliary capacitor; the alternate flowing realizing capacitive energy constitutes the peripheral passage of capacitive energy; and then keep alternate submodule capacitor voltage stable, it is the protected content of this right.
5. the distributed half-bridge MMC of the auxiliary capacitor based on inequality constraints according to right 1 is from all pressing topology, it is characterized in that: the distributed half-bridge MMC of auxiliary capacitor based on inequality constraints all presses topology certainly, not only serve as multi-level voltage source current converter and directly apply to flexible direct-current transmission field, also can pass through to constitute STATCOM (STATCOM), Research on Unified Power Quality Conditioner (UPQC), the device such as THE UPFC (UPFC) is applied to flexible AC transmission field; Other application scenarios of this invention topology of indirect utilization and thought are in interest field.
CN201610047427.6A 2016-01-25 2016-01-25 Inequality constraint-based half-bridge MMC self-equalizing topology employing distributed auxiliary capacitors Pending CN105634318A (en)

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