CN102800804B - 存储元件和存储装置 - Google Patents

存储元件和存储装置 Download PDF

Info

Publication number
CN102800804B
CN102800804B CN201210152766.2A CN201210152766A CN102800804B CN 102800804 B CN102800804 B CN 102800804B CN 201210152766 A CN201210152766 A CN 201210152766A CN 102800804 B CN102800804 B CN 102800804B
Authority
CN
China
Prior art keywords
layer
magnetization
memory element
memory
accumulation layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201210152766.2A
Other languages
English (en)
Chinese (zh)
Other versions
CN102800804A (zh
Inventor
肥后丰
细见政功
大森广之
别所和宏
浅山徹哉
山根阳
山根一阳
内田裕行
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of CN102800804A publication Critical patent/CN102800804A/zh
Application granted granted Critical
Publication of CN102800804B publication Critical patent/CN102800804B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3286—Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/329—Spin-exchange coupled multilayers wherein the magnetisation of the free layer is switched by a spin-polarised current, e.g. spin torque effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
CN201210152766.2A 2011-05-23 2012-05-16 存储元件和存储装置 Expired - Fee Related CN102800804B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011114439A JP5796349B2 (ja) 2011-05-23 2011-05-23 記憶素子の製造方法
JP2011-114439 2011-05-23

Publications (2)

Publication Number Publication Date
CN102800804A CN102800804A (zh) 2012-11-28
CN102800804B true CN102800804B (zh) 2017-01-18

Family

ID=47199844

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201210152766.2A Expired - Fee Related CN102800804B (zh) 2011-05-23 2012-05-16 存储元件和存储装置

Country Status (5)

Country Link
US (1) US8625342B2 (https=)
JP (1) JP5796349B2 (https=)
KR (1) KR101983077B1 (https=)
CN (1) CN102800804B (https=)
TW (1) TWI473088B (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5600344B2 (ja) 2010-03-10 2014-10-01 株式会社日立製作所 磁気抵抗効果素子及び磁気メモリ
JP5725735B2 (ja) * 2010-06-04 2015-05-27 株式会社日立製作所 磁気抵抗効果素子及び磁気メモリ
JP5786341B2 (ja) 2010-09-06 2015-09-30 ソニー株式会社 記憶素子、メモリ装置
US8796797B2 (en) 2012-12-21 2014-08-05 Intel Corporation Perpendicular spin transfer torque memory (STTM) device with enhanced stability and method to form same
CN103794224B (zh) * 2014-01-27 2017-01-11 华中科技大学 一种基于相变磁性材料的非易失性逻辑器件及逻辑操作方法
KR102244098B1 (ko) * 2014-03-25 2021-04-26 인텔 코포레이션 자벽 로직 디바이스들 및 인터커넥트
KR20170037707A (ko) * 2015-09-25 2017-04-05 삼성전자주식회사 자기 기억 소자 및 이의 제조 방법
US10439130B2 (en) * 2016-10-27 2019-10-08 Tdk Corporation Spin-orbit torque type magnetoresistance effect element, and method for producing spin-orbit torque type magnetoresistance effect element
JP6832818B2 (ja) * 2017-09-21 2021-02-24 キオクシア株式会社 磁気記憶装置
US12364164B2 (en) 2022-12-10 2025-07-15 International Business Machines Corporation Reactive serial resistance reduction for magnetoresistive random-access memory devices

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1392618A (zh) * 2001-03-19 2003-01-22 佳能株式会社 磁阻元件以及使用该元件的磁性随机访问存储器
CN1558422A (zh) * 2003-01-07 2004-12-29 ���ǵ�����ʽ���� 具有高选择性的磁阻随机存取存储器
CN1938874A (zh) * 2004-02-19 2007-03-28 弘世科技公司 具有低饱和磁化强度自由层的自旋转移磁性元件
CN1967892A (zh) * 2005-08-05 2007-05-23 索尼株式会社 存储元件和存储器
CN101097987A (zh) * 2006-03-29 2008-01-02 株式会社东芝 磁性记录元件和磁性存储器

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6130814A (en) 1998-07-28 2000-10-10 International Business Machines Corporation Current-induced magnetic switching device and memory including the same
JP2003017782A (ja) 2001-07-04 2003-01-17 Rikogaku Shinkokai キャリヤスピン注入磁化反転型磁気抵抗効果膜と該膜を用いた不揮発性メモリー素子及び該素子を用いたメモリー装置
JP4550552B2 (ja) * 2004-11-02 2010-09-22 株式会社東芝 磁気抵抗効果素子、磁気ランダムアクセスメモリ、磁気抵抗効果素子の製造方法
JP4877575B2 (ja) * 2005-05-19 2012-02-15 日本電気株式会社 磁気ランダムアクセスメモリ
US7224601B2 (en) * 2005-08-25 2007-05-29 Grandis Inc. Oscillating-field assisted spin torque switching of a magnetic tunnel junction memory element
JP2007081280A (ja) * 2005-09-16 2007-03-29 Fujitsu Ltd 磁気抵抗効果素子及び磁気メモリ装置
JP4444241B2 (ja) * 2005-10-19 2010-03-31 株式会社東芝 磁気抵抗効果素子、磁気ランダムアクセスメモリ、電子カード及び電子装置
JP2008283207A (ja) * 2005-10-19 2008-11-20 Toshiba Corp 磁気抵抗効果素子、磁気ランダムアクセスメモリ、電子カード及び電子装置
JP2007305882A (ja) * 2006-05-12 2007-11-22 Sony Corp 記憶素子及びメモリ
JP2008098523A (ja) * 2006-10-13 2008-04-24 Toshiba Corp 磁気抵抗効果素子および磁気メモリ
FR2910716B1 (fr) * 2006-12-26 2010-03-26 Commissariat Energie Atomique Dispositif magnetique multicouches, procede pour sa realisation, capteur de champ magnetique, memoire magnetique et porte logique mettant en oeuvre un tel dispositif
JP4682998B2 (ja) * 2007-03-15 2011-05-11 ソニー株式会社 記憶素子及びメモリ
FR2931011B1 (fr) * 2008-05-06 2010-05-28 Commissariat Energie Atomique Element magnetique a ecriture assistee thermiquement

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1392618A (zh) * 2001-03-19 2003-01-22 佳能株式会社 磁阻元件以及使用该元件的磁性随机访问存储器
CN1558422A (zh) * 2003-01-07 2004-12-29 ���ǵ�����ʽ���� 具有高选择性的磁阻随机存取存储器
CN1938874A (zh) * 2004-02-19 2007-03-28 弘世科技公司 具有低饱和磁化强度自由层的自旋转移磁性元件
CN1967892A (zh) * 2005-08-05 2007-05-23 索尼株式会社 存储元件和存储器
CN101097987A (zh) * 2006-03-29 2008-01-02 株式会社东芝 磁性记录元件和磁性存储器

Also Published As

Publication number Publication date
KR101983077B1 (ko) 2019-05-29
TWI473088B (zh) 2015-02-11
US8625342B2 (en) 2014-01-07
JP5796349B2 (ja) 2015-10-21
JP2012244030A (ja) 2012-12-10
US20120300541A1 (en) 2012-11-29
KR20120130702A (ko) 2012-12-03
TW201248626A (en) 2012-12-01
CN102800804A (zh) 2012-11-28

Similar Documents

Publication Publication Date Title
CN102800804B (zh) 存储元件和存储装置
CN102403029B (zh) 存储元件和存储装置
CN103151455B (zh) 存储元件和存储装置
CN106953005B (zh) 磁性元件和存储装置
JP6244617B2 (ja) 記憶素子、記憶装置、磁気ヘッド
JP6194752B2 (ja) 記憶素子、記憶装置、磁気ヘッド
JP5782715B2 (ja) 記憶素子及び記憶装置
JP2012146727A (ja) 記憶素子及び記憶装置
JP5987613B2 (ja) 記憶素子、記憶装置、磁気ヘッド
CN102769100A (zh) 存储元件和存储装置
CN102403026A (zh) 存储元件和存储装置
CN102779939A (zh) 存储元件和存储装置
WO2014050379A1 (ja) 記憶素子、記憶装置、磁気ヘッド
JP2013115400A (ja) 記憶素子、記憶装置
WO2013080436A1 (ja) 記憶素子、記憶装置
JP2013115399A (ja) 記憶素子、記憶装置
JP2013115412A (ja) 記憶素子、記憶装置
CN102403025B (zh) 存储元件和存储装置
CN102403024B (zh) 存储元件和存储装置
JP2012054439A (ja) 記憶素子及び記憶装置
JP2017212464A (ja) 記憶素子、記憶装置、磁気ヘッド
WO2013080437A1 (ja) 記憶素子、記憶装置
JP2012248811A (ja) 記憶素子及び記憶装置

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20170118

CF01 Termination of patent right due to non-payment of annual fee