CN102737940B - 等离子体处理装置 - Google Patents

等离子体处理装置 Download PDF

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Publication number
CN102737940B
CN102737940B CN201210089052.1A CN201210089052A CN102737940B CN 102737940 B CN102737940 B CN 102737940B CN 201210089052 A CN201210089052 A CN 201210089052A CN 102737940 B CN102737940 B CN 102737940B
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CN
China
Prior art keywords
mounting table
substrate
plasma
conducting
insulating element
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CN201210089052.1A
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English (en)
Chinese (zh)
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CN102737940A (zh
Inventor
山涌纯
舆水地盐
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
CN201210089052.1A 2011-03-29 2012-03-29 等离子体处理装置 Active CN102737940B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011072677A JP5741124B2 (ja) 2011-03-29 2011-03-29 プラズマ処理装置
JP2011-072677 2011-03-29

Publications (2)

Publication Number Publication Date
CN102737940A CN102737940A (zh) 2012-10-17
CN102737940B true CN102737940B (zh) 2015-05-27

Family

ID=46925811

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201210089052.1A Active CN102737940B (zh) 2011-03-29 2012-03-29 等离子体处理装置

Country Status (5)

Country Link
US (1) US20120247954A1 (ko)
JP (1) JP5741124B2 (ko)
KR (1) KR101910670B1 (ko)
CN (1) CN102737940B (ko)
TW (1) TWI566296B (ko)

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JP5886700B2 (ja) * 2012-07-09 2016-03-16 東京エレクトロン株式会社 伝熱シート貼付装置及び伝熱シート貼付方法
JP6689020B2 (ja) * 2013-08-21 2020-04-28 東京エレクトロン株式会社 プラズマ処理装置
JP6374301B2 (ja) * 2013-12-24 2018-08-15 東京エレクトロン株式会社 ステージ、ステージの製造方法、熱交換器
JP6018606B2 (ja) * 2014-06-27 2016-11-02 東京エレクトロン株式会社 温度制御可能なステージを含むシステム、半導体製造装置及びステージの温度制御方法
JP6345030B2 (ja) * 2014-08-11 2018-06-20 東京エレクトロン株式会社 プラズマ処理装置及びフォーカスリング
US10262886B2 (en) * 2014-09-30 2019-04-16 Sumitomo Osaka Cement Co., Ltd. Electrostatic chuck device
CN104715997A (zh) * 2015-03-30 2015-06-17 上海华力微电子有限公司 聚焦环及具有该聚焦环的等离子体处理装置
US10854492B2 (en) * 2015-08-18 2020-12-01 Lam Research Corporation Edge ring assembly for improving feature profile tilting at extreme edge of wafer
KR102581226B1 (ko) * 2016-12-23 2023-09-20 삼성전자주식회사 플라즈마 처리 장치
CN108281342B (zh) * 2017-01-05 2020-01-21 东京毅力科创株式会社 等离子体处理装置
US10199252B2 (en) * 2017-06-30 2019-02-05 Taiwan Semiconductor Manufacturing Company, Ltd. Thermal pad for etch rate uniformity
JP6932034B2 (ja) * 2017-07-13 2021-09-08 東京エレクトロン株式会社 伝熱シート及び基板処理装置
US10950483B2 (en) * 2017-11-28 2021-03-16 Taiwan Semiconductor Manufacturing Co., Ltd. Systems and methods for fixed focus ring processing
JP7033441B2 (ja) * 2017-12-01 2022-03-10 東京エレクトロン株式会社 プラズマ処理装置
JP7145625B2 (ja) 2018-03-07 2022-10-03 東京エレクトロン株式会社 基板載置構造体およびプラズマ処理装置
JP7055040B2 (ja) * 2018-03-07 2022-04-15 東京エレクトロン株式会社 被処理体の載置装置及び処理装置
JP2019220497A (ja) * 2018-06-15 2019-12-26 東京エレクトロン株式会社 載置台及びプラズマ処理装置
US11488808B2 (en) * 2018-11-30 2022-11-01 Tokyo Electron Limited Plasma processing apparatus, calculation method, and calculation program
JP7186646B2 (ja) * 2019-03-22 2022-12-09 東京エレクトロン株式会社 基板処理装置および載置台上のフォーカスリングの有無の検知方法
JP7204564B2 (ja) * 2019-03-29 2023-01-16 東京エレクトロン株式会社 プラズマ処理装置
CN112185787B (zh) * 2019-07-04 2023-09-29 中微半导体设备(上海)股份有限公司 等离子体处理设备的射频电极组件和等离子体处理设备
JP7321026B2 (ja) * 2019-08-02 2023-08-04 東京エレクトロン株式会社 エッジリング、載置台、基板処理装置及び基板処理方法
JP2021040011A (ja) * 2019-09-02 2021-03-11 キオクシア株式会社 プラズマ処理装置
JP7370228B2 (ja) * 2019-11-22 2023-10-27 東京エレクトロン株式会社 プラズマ処理装置
US20230114319A1 (en) * 2020-03-05 2023-04-13 Mitsubishi Materials Corporation Member for plasma processing apparatus, method for manufacturing same, and plasma processing apparatus
KR20220027509A (ko) * 2020-08-27 2022-03-08 삼성전자주식회사 플라즈마 공정 장치 및 플라즈마 공정 장치에서의 웨이퍼 디척킹 방법
CN112397366B (zh) * 2020-11-05 2023-07-14 北京北方华创微电子装备有限公司 一种承载装置及半导体反应腔室
JP7554220B2 (ja) 2022-03-08 2024-09-19 日本碍子株式会社 半導体製造装置用部材

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CN101150044A (zh) * 2006-09-19 2008-03-26 东京毅力科创株式会社 聚焦环和等离子体处理装置
CN101236915A (zh) * 2007-01-22 2008-08-06 东京毅力科创株式会社 基板处理装置以及聚焦环

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JP4053148B2 (ja) * 1998-07-28 2008-02-27 株式会社エフオーアイ プラズマ処理装置
JP4592916B2 (ja) * 2000-04-25 2010-12-08 東京エレクトロン株式会社 被処理体の載置装置
JP4676074B2 (ja) * 2001-02-15 2011-04-27 東京エレクトロン株式会社 フォーカスリング及びプラズマ処理装置
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US7381293B2 (en) * 2003-01-09 2008-06-03 Taiwan Semiconductor Manufacturing Co., Ltd. Convex insert ring for etch chamber
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US7658816B2 (en) * 2003-09-05 2010-02-09 Tokyo Electron Limited Focus ring and plasma processing apparatus
JP4640922B2 (ja) * 2003-09-05 2011-03-02 東京エレクトロン株式会社 プラズマ処理装置
KR100578129B1 (ko) * 2003-09-19 2006-05-10 삼성전자주식회사 플라즈마 식각 장치
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JP2007250967A (ja) * 2006-03-17 2007-09-27 Tokyo Electron Ltd プラズマ処理装置および方法とフォーカスリング
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JP2007258500A (ja) * 2006-03-24 2007-10-04 Hitachi High-Technologies Corp 基板支持装置
JP5255936B2 (ja) * 2008-07-18 2013-08-07 東京エレクトロン株式会社 フォーカスリング及び基板載置台、並びにそれらを備えたプラズマ処理装置
JP5657262B2 (ja) * 2009-03-27 2015-01-21 東京エレクトロン株式会社 プラズマ処理装置
JP5227264B2 (ja) * 2009-06-02 2013-07-03 東京エレクトロン株式会社 プラズマ処理装置，プラズマ処理方法，プログラム
JP5690596B2 (ja) * 2011-01-07 2015-03-25 東京エレクトロン株式会社 フォーカスリング及び該フォーカスリングを備える基板処理装置

Patent Citations (2)

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CN101150044A (zh) * 2006-09-19 2008-03-26 东京毅力科创株式会社 聚焦环和等离子体处理装置
CN101236915A (zh) * 2007-01-22 2008-08-06 东京毅力科创株式会社 基板处理装置以及聚焦环

Also Published As

Publication number Publication date
TWI566296B (zh) 2017-01-11
KR20120112147A (ko) 2012-10-11
TW201301383A (zh) 2013-01-01
JP2012209359A (ja) 2012-10-25
KR101910670B1 (ko) 2018-10-22
US20120247954A1 (en) 2012-10-04
JP5741124B2 (ja) 2015-07-01
CN102737940A (zh) 2012-10-17

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