CN102683366B - 固态成像装置、固态成像装置的制造方法和电子设备 - Google Patents

固态成像装置、固态成像装置的制造方法和电子设备 Download PDF

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Publication number
CN102683366B
CN102683366B CN201210058232.3A CN201210058232A CN102683366B CN 102683366 B CN102683366 B CN 102683366B CN 201210058232 A CN201210058232 A CN 201210058232A CN 102683366 B CN102683366 B CN 102683366B
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color filter
film
solid
state imaging
imaging device
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Chinese (zh)
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CN102683366A (zh
Inventor
荻田知治
山本笃志
田谷圭司
大塚洋
大塚洋一
田渕清隆
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Sony Corp
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Sony Corp
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Priority to CN201610037666.3A priority Critical patent/CN105720066B/zh
Priority to CN201610626493.9A priority patent/CN106129077B/zh
Priority to CN201710116321.1A priority patent/CN107068705B/zh
Priority to CN201610623971.0A priority patent/CN106098716B/zh
Publication of CN102683366A publication Critical patent/CN102683366A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN201210058232.3A 2011-03-14 2012-03-07 固态成像装置、固态成像装置的制造方法和电子设备 Active CN102683366B (zh)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CN201610037666.3A CN105720066B (zh) 2011-03-14 2012-03-07 固态成像装置、固态成像装置的制造方法和电子设备
CN201610626493.9A CN106129077B (zh) 2011-03-14 2012-03-07 成像装置和电子设备
CN201710116321.1A CN107068705B (zh) 2011-03-14 2012-03-07 成像装置和电子设备
CN201610623971.0A CN106098716B (zh) 2011-03-14 2012-03-07 成像装置和电子设备

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JP2011-055631 2011-03-14
JP2011055631 2011-03-14

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CN201710116321.1A Division CN107068705B (zh) 2011-03-14 2012-03-07 成像装置和电子设备
CN201610037666.3A Division CN105720066B (zh) 2011-03-14 2012-03-07 固态成像装置、固态成像装置的制造方法和电子设备
CN201610623971.0A Division CN106098716B (zh) 2011-03-14 2012-03-07 成像装置和电子设备
CN201610626493.9A Division CN106129077B (zh) 2011-03-14 2012-03-07 成像装置和电子设备

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CN102683366B true CN102683366B (zh) 2017-04-12

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CN201210058232.3A Active CN102683366B (zh) 2011-03-14 2012-03-07 固态成像装置、固态成像装置的制造方法和电子设备
CN201610623971.0A Active CN106098716B (zh) 2011-03-14 2012-03-07 成像装置和电子设备
CN201610626493.9A Active CN106129077B (zh) 2011-03-14 2012-03-07 成像装置和电子设备
CN201710116321.1A Active CN107068705B (zh) 2011-03-14 2012-03-07 成像装置和电子设备
CN201610037666.3A Active CN105720066B (zh) 2011-03-14 2012-03-07 固态成像装置、固态成像装置的制造方法和电子设备

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Application Number Title Priority Date Filing Date
CN201610623971.0A Active CN106098716B (zh) 2011-03-14 2012-03-07 成像装置和电子设备
CN201610626493.9A Active CN106129077B (zh) 2011-03-14 2012-03-07 成像装置和电子设备
CN201710116321.1A Active CN107068705B (zh) 2011-03-14 2012-03-07 成像装置和电子设备
CN201610037666.3A Active CN105720066B (zh) 2011-03-14 2012-03-07 固态成像装置、固态成像装置的制造方法和电子设备

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US (1) US8742525B2 (https=)
JP (1) JP5938946B2 (https=)
CN (5) CN102683366B (https=)

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US9985072B1 (en) * 2016-11-29 2018-05-29 Taiwan Semiconductor Manufacturing Co., Ltd. CMOS image sensor with dual damascene grid design having absorption enhancement structure
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JP2018200909A (ja) * 2017-05-25 2018-12-20 ソニーセミコンダクタソリューションズ株式会社 撮像素子および撮像装置
JP7383876B2 (ja) * 2018-02-02 2023-11-21 株式会社ニコン 撮像素子、及び、撮像装置
US10770496B2 (en) * 2018-04-16 2020-09-08 Visera Technologies Company Limited Optical sensors and methods for forming the same
WO2019220861A1 (ja) * 2018-05-16 2019-11-21 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子および固体撮像素子の製造方法
CN110729314A (zh) * 2018-07-17 2020-01-24 联华电子股份有限公司 光学感测装置
JP7362198B2 (ja) * 2018-07-18 2023-10-17 ソニーセミコンダクタソリューションズ株式会社 受光素子、測距モジュール、および、電子機器
KR102649313B1 (ko) 2019-02-13 2024-03-20 삼성전자주식회사 이미지 센서
KR102747501B1 (ko) * 2019-10-02 2024-12-31 에스케이하이닉스 주식회사 이미지 센서
JP2021082716A (ja) * 2019-11-19 2021-05-27 ソニーセミコンダクタソリューションズ株式会社 撮像素子および撮像装置
US11631709B2 (en) * 2020-03-10 2023-04-18 Visera Technologies Company Limited Solid-state image sensor
WO2021193254A1 (ja) * 2020-03-27 2021-09-30 ソニーセミコンダクタソリューションズ株式会社 撮像装置及び電子機器
KR102786345B1 (ko) * 2020-04-24 2025-03-24 삼성전자주식회사 이미지 센서 및 그 제조 방법
KR102897588B1 (ko) 2020-11-27 2025-12-10 삼성전자주식회사 이미지 센서
KR20230156322A (ko) 2021-03-16 2023-11-14 소니 세미컨덕터 솔루션즈 가부시키가이샤 촬상 장치
CN220603808U (zh) * 2022-05-16 2024-03-15 3M创新有限公司 用于显示系统的光学构造体
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Also Published As

Publication number Publication date
CN106129077A (zh) 2016-11-16
US20120235263A1 (en) 2012-09-20
US8742525B2 (en) 2014-06-03
CN102683366A (zh) 2012-09-19
CN106098716A (zh) 2016-11-09
CN107068705B (zh) 2019-03-08
CN106098716B (zh) 2018-04-17
CN105720066A (zh) 2016-06-29
JP5938946B2 (ja) 2016-06-22
CN105720066B (zh) 2021-11-16
CN107068705A (zh) 2017-08-18
JP2012209542A (ja) 2012-10-25
CN106129077B (zh) 2019-05-10

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