CN102668111A - 光电转换装置和其制造方法 - Google Patents

光电转换装置和其制造方法 Download PDF

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Publication number
CN102668111A
CN102668111A CN2010800568363A CN201080056836A CN102668111A CN 102668111 A CN102668111 A CN 102668111A CN 2010800568363 A CN2010800568363 A CN 2010800568363A CN 201080056836 A CN201080056836 A CN 201080056836A CN 102668111 A CN102668111 A CN 102668111A
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CN
China
Prior art keywords
layer
type layer
type
photoelectric conversion
conversion device
Prior art date
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Pending
Application number
CN2010800568363A
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English (en)
Chinese (zh)
Inventor
村田和哉
松本光弘
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Sanyo Electric Co Ltd
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Sanyo Electric Co Ltd
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Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Publication of CN102668111A publication Critical patent/CN102668111A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
    • H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
    • H10F10/166—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H10F10/174—Photovoltaic cells having only PIN junction potential barriers comprising monocrystalline or polycrystalline materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

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  • Photovoltaic Devices (AREA)
CN2010800568363A 2009-12-15 2010-12-13 光电转换装置和其制造方法 Pending CN102668111A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009283877A JP4940290B2 (ja) 2009-12-15 2009-12-15 光電変換装置及びその製造方法
JP2009-283877 2009-12-15
PCT/JP2010/072346 WO2011074523A1 (ja) 2009-12-15 2010-12-13 光電変換装置及びその製造方法

Publications (1)

Publication Number Publication Date
CN102668111A true CN102668111A (zh) 2012-09-12

Family

ID=44167275

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2010800568363A Pending CN102668111A (zh) 2009-12-15 2010-12-13 光电转换装置和其制造方法

Country Status (4)

Country Link
US (1) US8575472B2 (enExample)
JP (1) JP4940290B2 (enExample)
CN (1) CN102668111A (enExample)
WO (1) WO2011074523A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102931270A (zh) * 2012-11-19 2013-02-13 深圳市创益科技发展有限公司 一种弱光型非晶硅太阳能电池及其制造方法

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5927027B2 (ja) * 2011-10-05 2016-05-25 株式会社半導体エネルギー研究所 光電変換装置
WO2013065538A1 (ja) * 2011-11-03 2013-05-10 三洋電機株式会社 光電変換装置
KR101918737B1 (ko) 2012-03-19 2019-02-08 엘지전자 주식회사 태양 전지
WO2014002266A1 (ja) 2012-06-29 2014-01-03 三洋電機株式会社 太陽電池
KR101979843B1 (ko) * 2013-03-13 2019-05-17 엘지전자 주식회사 태양전지
JP5892113B2 (ja) * 2013-06-26 2016-03-23 株式会社ダイフク 物品保管設備
JP6350979B2 (ja) * 2013-09-04 2018-07-04 パナソニックＩｐマネジメント株式会社 太陽電池
EP3358637A4 (en) * 2015-09-30 2019-06-19 Kaneka Corporation PHOTOELECTRIC CONVERSION DEVICE WITH SEVERAL TRANSITIONS AND PHOTOELECTRIC CONVERSION MODULE
CN114678434B (zh) * 2021-12-28 2024-05-10 浙江爱旭太阳能科技有限公司 一种提高光电转换效率的异质结电池

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003158276A (ja) * 2001-11-21 2003-05-30 Mitsubishi Heavy Ind Ltd 微結晶シリコン太陽電池及びその製造方法
US20050205127A1 (en) * 2004-01-09 2005-09-22 Mitsubishi Heavy Industries Ltd. Photovoltaic device
CN101295746A (zh) * 2008-04-15 2008-10-29 福建钧石能源有限公司 薄膜太阳能电池及其制造方法
CN101471387A (zh) * 2007-12-27 2009-07-01 财团法人工业技术研究院 光电转换元件的p型掺杂层及其制造方法
EP2099076A1 (en) * 2006-12-25 2009-09-09 Sharp Kabushiki Kaisha Photoelectric converter and method for fabricating the same

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4033517B2 (ja) 1997-04-17 2008-01-16 株式会社カネカ シリコン系薄膜光電変換装置
JP2000077694A (ja) * 1998-06-16 2000-03-14 Canon Inc 光起電力素子および太陽電池モジュ―ル
JP4158267B2 (ja) * 1999-03-15 2008-10-01 富士電機ホールディングス株式会社 非単結晶太陽電池
JP2003188400A (ja) * 2001-12-20 2003-07-04 Mitsubishi Heavy Ind Ltd 結晶性ＳｉＣ膜の製造方法、結晶性ＳｉＣ膜及び太陽電池
JP3978121B2 (ja) * 2002-11-27 2007-09-19 三菱重工業株式会社 薄膜太陽電池の製造方法
JP2004335823A (ja) * 2003-05-09 2004-11-25 Canon Inc 光起電力素子及び光起電力素子の形成方法
US7671271B2 (en) * 2006-03-08 2010-03-02 National Science And Technology Dev. Agency Thin film solar cell and its fabrication process
JP2008283075A (ja) * 2007-05-11 2008-11-20 Kaneka Corp 光電変換装置の製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003158276A (ja) * 2001-11-21 2003-05-30 Mitsubishi Heavy Ind Ltd 微結晶シリコン太陽電池及びその製造方法
US20050205127A1 (en) * 2004-01-09 2005-09-22 Mitsubishi Heavy Industries Ltd. Photovoltaic device
EP2099076A1 (en) * 2006-12-25 2009-09-09 Sharp Kabushiki Kaisha Photoelectric converter and method for fabricating the same
CN101471387A (zh) * 2007-12-27 2009-07-01 财团法人工业技术研究院 光电转换元件的p型掺杂层及其制造方法
CN101295746A (zh) * 2008-04-15 2008-10-29 福建钧石能源有限公司 薄膜太阳能电池及其制造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102931270A (zh) * 2012-11-19 2013-02-13 深圳市创益科技发展有限公司 一种弱光型非晶硅太阳能电池及其制造方法
CN102931270B (zh) * 2012-11-19 2015-09-02 深圳市创益科技发展有限公司 一种弱光型非晶硅太阳能电池及其制造方法

Also Published As

Publication number Publication date
JP4940290B2 (ja) 2012-05-30
WO2011074523A1 (ja) 2011-06-23
US8575472B2 (en) 2013-11-05
JP2011129561A (ja) 2011-06-30
US20120266948A1 (en) 2012-10-25

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Application publication date: 20120912