CN102623598B - 发光器件 - Google Patents

发光器件 Download PDF

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Publication number
CN102623598B
CN102623598B CN201210020273.3A CN201210020273A CN102623598B CN 102623598 B CN102623598 B CN 102623598B CN 201210020273 A CN201210020273 A CN 201210020273A CN 102623598 B CN102623598 B CN 102623598B
Authority
CN
China
Prior art keywords
layer
light emitting
type semiconductor
semiconductor layer
barrier layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201210020273.3A
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English (en)
Chinese (zh)
Other versions
CN102623598A (zh
Inventor
丁锺弼
黄净铉
金锺国
孙圣珍
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jingcan Optoelectronics Guangdong Co ltd
Original Assignee
LG Innotek Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020110007926A external-priority patent/KR101778161B1/ko
Priority claimed from KR1020110061648A external-priority patent/KR101798238B1/ko
Application filed by LG Innotek Co Ltd filed Critical LG Innotek Co Ltd
Publication of CN102623598A publication Critical patent/CN102623598A/zh
Application granted granted Critical
Publication of CN102623598B publication Critical patent/CN102623598B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H10H20/8162—Current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/8215—Bodies characterised by crystalline imperfections, e.g. dislocations; characterised by the distribution of dopants, e.g. delta-doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Led Devices (AREA)
  • Electroluminescent Light Sources (AREA)
CN201210020273.3A 2011-01-26 2012-01-29 发光器件 Active CN102623598B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR1020110007926A KR101778161B1 (ko) 2011-01-26 2011-01-26 발광소자
KR10-2011-0007926 2011-01-26
KR1020110061648A KR101798238B1 (ko) 2011-06-24 2011-06-24 발광소자
KR10-2011-0061648 2011-06-24

Publications (2)

Publication Number Publication Date
CN102623598A CN102623598A (zh) 2012-08-01
CN102623598B true CN102623598B (zh) 2016-04-27

Family

ID=45497903

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201210020273.3A Active CN102623598B (zh) 2011-01-26 2012-01-29 发光器件

Country Status (4)

Country Link
US (1) US8748932B2 (enExample)
EP (1) EP2482343B1 (enExample)
JP (1) JP6081062B2 (enExample)
CN (1) CN102623598B (enExample)

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KR102007402B1 (ko) * 2012-08-06 2019-08-05 엘지이노텍 주식회사 발광소자
US8890114B2 (en) * 2012-10-16 2014-11-18 Epistar Corporation Light-emitting device
JP6088807B2 (ja) * 2012-11-19 2017-03-01 スタンレー電気株式会社 半導体発光素子及びその製造方法
DE102013103602A1 (de) * 2013-04-10 2014-10-16 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zu seiner Herstellung
DE102014115599A1 (de) * 2013-10-28 2015-04-30 Seoul Viosys Co., Ltd. Halbleitervorrichtung und Verfahren zu deren Herstellung
KR102070092B1 (ko) 2014-01-09 2020-01-29 삼성전자주식회사 반도체 발광소자
US9997397B2 (en) * 2015-02-13 2018-06-12 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure and manufacturing method thereof
CN107873109A (zh) * 2015-04-08 2018-04-03 韩国光技术院 氮化物系半导体发光元件及其制造方法
KR102391302B1 (ko) * 2015-05-22 2022-04-27 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광 소자 및 이의 제조 방법
KR102569461B1 (ko) * 2015-11-30 2023-09-04 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광소자 및 이를 포함하는 조명장치
WO2017202329A1 (zh) * 2016-05-25 2017-11-30 厦门三安光电有限公司 发光二极管及其制作方法
JP6785455B2 (ja) * 2018-05-11 2020-11-18 パナソニックＩｐマネジメント株式会社 発光ダイオード素子、及び発光ダイオード素子の製造方法
DE112021001316T5 (de) * 2020-02-28 2022-12-29 Sony Group Corporation Laserelement
CN111430520B (zh) * 2020-04-30 2024-08-06 聚灿光电科技股份有限公司 具有n型电子阻挡层的led外延结构、制备方法和器件
US12020930B2 (en) 2020-05-20 2024-06-25 Asahi Kasei Kabushiki Kaisha Nitride semiconductor element
CN112259650B (zh) * 2020-09-10 2021-12-07 华灿光电（浙江）有限公司 发光二极管外延片及其制备方法
CN112397621B (zh) * 2020-10-30 2022-03-18 华灿光电(苏州）有限公司 紫外发光二极管的外延片及其制备方法

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CN101257080A (zh) * 2008-03-11 2008-09-03 北京大学 氮化物基脊型发光二极管和激光器及制备方法
CN101521258A (zh) * 2009-03-27 2009-09-02 武汉华灿光电有限公司 一种提高发光二极管外量子效率的方法

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JP3787195B2 (ja) * 1996-09-06 2006-06-21 シャープ株式会社 窒化ガリウム系化合物半導体発光素子の製造方法
JP3583375B2 (ja) * 2001-03-02 2004-11-04 三菱電線工業株式会社 ＧａＮ系半導体基材およびその製造方法
JP3616020B2 (ja) * 2001-03-06 2005-02-02 士郎 酒井 窒化ガリウム系半導体装置及びその製造方法
JP3909811B2 (ja) * 2001-06-12 2007-04-25 パイオニア株式会社 窒化物半導体素子及びその製造方法
US7560364B2 (en) * 2006-05-05 2009-07-14 Applied Materials, Inc. Dislocation-specific lateral epitaxial overgrowth to reduce dislocation density of nitride films
KR101338274B1 (ko) * 2006-08-08 2013-12-09 엘지이노텍 주식회사 질화물계 발광 소자 및 그 제조방법
JP2008182069A (ja) * 2007-01-25 2008-08-07 Toshiba Corp 半導体発光素子
JP4962130B2 (ja) * 2007-04-04 2012-06-27 三菱化学株式会社 ＧａＮ系半導体発光ダイオードの製造方法
KR100835116B1 (ko) * 2007-04-16 2008-06-05 삼성전기주식회사 질화물 반도체 발광 소자
JP2009081374A (ja) * 2007-09-27 2009-04-16 Rohm Co Ltd 半導体発光素子
US20100314653A1 (en) * 2008-06-06 2010-12-16 Kenji Orita Semiconductor light-emitting element
KR20100003321A (ko) * 2008-06-24 2010-01-08 삼성전자주식회사 발광 소자, 이를 포함하는 발광 장치, 상기 발광 소자 및발광 장치의 제조 방법
US8785965B2 (en) * 2008-09-09 2014-07-22 Panasonic Corporation Nitride-based semiconductor light-emitting device and method for fabricating the same
KR101101135B1 (ko) * 2008-10-01 2012-01-05 삼성엘이디 주식회사 액정고분자를 이용한 발광다이오드 패키지
KR101521259B1 (ko) * 2008-12-23 2015-05-18 삼성전자주식회사 질화물 반도체 발광소자 및 그 제조방법
KR101636182B1 (ko) * 2010-02-24 2016-07-04 고쿠리쓰 겐큐 가이하쓰 호징 리가가쿠 겐큐소 질화물 반도체 다중 양자 장벽을 갖는 발광 소자 및 그 제조 방법

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101257080A (zh) * 2008-03-11 2008-09-03 北京大学 氮化物基脊型发光二极管和激光器及制备方法
CN101521258A (zh) * 2009-03-27 2009-09-02 武汉华灿光电有限公司 一种提高发光二极管外量子效率的方法

Also Published As

Publication number Publication date
EP2482343A2 (en) 2012-08-01
US8748932B2 (en) 2014-06-10
US20120187365A1 (en) 2012-07-26
JP2012156508A (ja) 2012-08-16
EP2482343B1 (en) 2019-11-27
EP2482343A3 (en) 2015-11-25
JP6081062B2 (ja) 2017-02-15
CN102623598A (zh) 2012-08-01

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Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20210818

Address after: 168 Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee after: Suzhou Leyu Semiconductor Co.,Ltd.

Address before: Seoul, South Kerean

Patentee before: LG INNOTEK Co.,Ltd.

CP03 Change of name, title or address
CP03 Change of name, title or address

Address after: 215499 No. 168, Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee after: Suzhou Liyu Semiconductor Co.,Ltd.

Country or region after: China

Address before: 168 Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee before: Suzhou Leyu Semiconductor Co.,Ltd.

Country or region before: China

TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20250331

Address after: Office 1501, No. 58 Huajin Street, Hengqin New District, Zhuhai City, Guangdong Province 519031

Patentee after: Jingcan Optoelectronics (Guangdong) Co.,Ltd.

Country or region after: China

Address before: 215499 No. 168, Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee before: Suzhou Liyu Semiconductor Co.,Ltd.

Country or region before: China