JP2012156508A - 発光素子 - Google Patents
発光素子 Download PDFInfo
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- JP2012156508A JP2012156508A JP2012013033A JP2012013033A JP2012156508A JP 2012156508 A JP2012156508 A JP 2012156508A JP 2012013033 A JP2012013033 A JP 2012013033A JP 2012013033 A JP2012013033 A JP 2012013033A JP 2012156508 A JP2012156508 A JP 2012156508A
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- light emitting
- layer
- emitting device
- electron blocking
- semiconductor layer
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- 239000004065 semiconductor Substances 0.000 claims abstract description 106
- 230000000903 blocking effect Effects 0.000 claims abstract description 76
- 239000002019 doping agent Substances 0.000 claims description 16
- 239000003362 semiconductor superlattice Substances 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 abstract description 14
- 239000010410 layer Substances 0.000 description 240
- 239000000758 substrate Substances 0.000 description 26
- 238000000034 method Methods 0.000 description 17
- 239000000463 material Substances 0.000 description 15
- 238000002347 injection Methods 0.000 description 13
- 239000007924 injection Substances 0.000 description 13
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 10
- 229910002704 AlGaN Inorganic materials 0.000 description 7
- 239000011777 magnesium Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 238000005286 illumination Methods 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- 229910052733 gallium Inorganic materials 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 239000011787 zinc oxide Substances 0.000 description 5
- 238000000465 moulding Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 238000005253 cladding Methods 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 239000004417 polycarbonate Substances 0.000 description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 3
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910019897 RuOx Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- -1 bicetyl cyclopentadienyl magnesium Chemical compound 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- VRIVJOXICYMTAG-IYEMJOQQSA-L iron(ii) gluconate Chemical compound [Fe+2].OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O.OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O VRIVJOXICYMTAG-IYEMJOQQSA-L 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- SKRWFPLZQAAQSU-UHFFFAOYSA-N stibanylidynetin;hydrate Chemical compound O.[Sn].[Sb] SKRWFPLZQAAQSU-UHFFFAOYSA-N 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910018229 Al—Ga Inorganic materials 0.000 description 1
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N nickel(II) oxide Inorganic materials [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000012994 photoredox catalyst Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
- 210000001215 vagina Anatomy 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities
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- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- Electroluminescent Light Sources (AREA)
Abstract
【解決手段】発光素子は、第1導電型半導体層110と、前記第1導電型半導体層の上の発光層120と、前記発光層の上の電子遮断層130と、前記電子遮断層の上の第2導電型半導体層140とを備え、前記電子遮断層は厚さの高低差があるパターンを含む。
【選択図】図1
Description
図1は、本発明の一実施例による発光素子100の断面図であり、水平型発光素子を例示としているが、これに限ることはない。
発光素子100は、第1導電型半導体層110、第2導電型半導体層140、及び第1導電型半導体層110と第2導電型半導体層140との間の発光層120を備える。
そして、電流拡散層114と接する第1導電型半導体層110面は、くさび状の湾入部状に形成されてもよく、くさび状の湾入部面にはクラッディング層112が更に形成されてもよい。
第1導電型半導体層110は、InxAlyGa(1−x−y)Nの組成式を有する半導体材料に成長してもよく、凹部(A)の断面は三角形を有してもよく、これを上面から見ると六角形状を有して形成されてもよい。例えば、凹部(A)は六角錐状を有してもよいが、これに限ることはない。
第1導電型半導体層110は、GaN,InN,AlN,InGaN,AlGaN,InAlGaN,AlInN,AlGaAs,InGaAs,AlInGaAs,GaP,AlGaP、InGaP,AlInGaP,InPのうちいずれか一つ以上で形成されてもよい。
図3bは、本発明の実施例による発光素子におけるくさび状の湾入部(Q)領域に対する部分(P)拡大図である。くさび状の湾入部(Q)は突出部と称してもよいが、これに限ることはない。
第2導電型半導体層140は、第2導電型ドーパントがドーピングされた3族−5族化合物半導体、例えば、InxAlyGa1−x−yN(0≦x≦1,0≦y≦1,0≦x+y≦1)の組成式を有する半導体物質を含んでもよい。第2導電型半導体層140がP型半導体層である場合、第2導電型ドーパントはP型ドーパントとしてMg,Zn,Ca,Sr,Baなどを含んでもよい。
図7は、本発明の実施例による照明ユニットの斜視図1100である。但し、図7の照明ユニット1100は照明システムの一例であり、これに対して限ることはない。
発光モジュール部1240は、導光板1210の少なくとも一側面に光を提供し、究極的に前記バックライトユニットが設置されるディスプレイ装置の光源として作用するようになる。
Claims (16)
- 第1導電型半導体層と、
前記第1導電型半導体層の上の発光層と、
前記発光層の上の電子遮断層と、
前記電子遮断層の上の第2導電型半導体層と
を備え、
前記電子遮断層は、厚さの高低差があるパターンを含む発光素子。 - 前記電子遮断層は、
前記パターンがない第1電子遮断層と、
前記第1電子遮断層の上に前記パターンを有する第2電子遮断層と
を備える、請求項1に記載の発光素子。 - 前記第2電子遮断層は、峰と谷を有する、請求項2に記載の発光素子。
- 前記第1導電型半導体層の上面にくさび状の湾入部を有する、請求項1乃至請求項3のうちいずれかに記載の発光素子。
- 前記くさび状の湾入部(Q)の頂点部分の抵抗が、前記第1導電型半導体層の成長面の抵抗より大きい、請求項4に記載の発光素子。
- 前記くさび状の湾入部の上に膣化物半導体超格子層を更に備える、請求項5に記載の発光素子。
- 前記膣化物半導体超格子層はN型ドーパントでドーピングされている、請求項6に記載の発光素子。
- 前記くさび状の湾入部の断面は三角形を含む、請求項4に記載の発光素子。
- 前記くさび状の湾入部の上面は六角形状を含む、請求項4に記載の発光素子。
- 前記電子遮断層は、AlxInyGa(1−x−y)N(0.1≦x≦1,0≦y≦0.3,0≦x+y≦1)を含む、請求項1に記載の発光素子。
- 前記電子遮断層におけるAlの含量は10%以上であり、Inの含量は30%以下である請、求項10に記載の発光素子。
- 前記電子遮断層は、100Å乃至600Å以内の厚さで形成されている、請求項1乃至請求項3のうちいずれかに記載の発光素子。
- 前記電子遮断層は、300Å乃至500Å以内の厚さで形成されている、請求項12に記載の発光素子。
- 前記第1電子遮断層は、5Å乃至100Å以内の厚さで形成されている、請求項12に記載の発光素子。
- 前記電子遮断層は第2導電型ドーパントを含む、請求項1乃至請求項3のうちいずれかに記載の発光素子。
- 前記ドーパントはMgを含む、請求項15に記載の発光素子。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2011-0007926 | 2011-01-26 | ||
KR1020110007926A KR101778161B1 (ko) | 2011-01-26 | 2011-01-26 | 발광소자 |
KR10-2011-0061648 | 2011-06-24 | ||
KR1020110061648A KR101798238B1 (ko) | 2011-06-24 | 2011-06-24 | 발광소자 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2012156508A true JP2012156508A (ja) | 2012-08-16 |
JP2012156508A5 JP2012156508A5 (ja) | 2015-02-19 |
JP6081062B2 JP6081062B2 (ja) | 2017-02-15 |
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Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012013033A Active JP6081062B2 (ja) | 2011-01-26 | 2012-01-25 | 発光素子 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8748932B2 (ja) |
EP (1) | EP2482343B1 (ja) |
JP (1) | JP6081062B2 (ja) |
CN (1) | CN102623598B (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014103211A (ja) * | 2012-11-19 | 2014-06-05 | Stanley Electric Co Ltd | 半導体発光素子及びその製造方法 |
CN107873109A (zh) * | 2015-04-08 | 2018-04-03 | 韩国光技术院 | 氮化物系半导体发光元件及其制造方法 |
WO2021172171A1 (ja) * | 2020-02-28 | 2021-09-02 | ソニーグループ株式会社 | レーザ素子 |
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US20120187365A1 (en) | 2012-07-26 |
CN102623598B (zh) | 2016-04-27 |
EP2482343B1 (en) | 2019-11-27 |
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US8748932B2 (en) | 2014-06-10 |
JP6081062B2 (ja) | 2017-02-15 |
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EP2482343A3 (en) | 2015-11-25 |
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