CN101257080A - 氮化物基脊型发光二极管和激光器及制备方法 - Google Patents
氮化物基脊型发光二极管和激光器及制备方法 Download PDFInfo
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- CN101257080A CN101257080A CNA2008101016815A CN200810101681A CN101257080A CN 101257080 A CN101257080 A CN 101257080A CN A2008101016815 A CNA2008101016815 A CN A2008101016815A CN 200810101681 A CN200810101681 A CN 200810101681A CN 101257080 A CN101257080 A CN 101257080A
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- 150000004767 nitrides Chemical class 0.000 title claims abstract description 71
- 238000000034 method Methods 0.000 title claims abstract description 27
- 238000002360 preparation method Methods 0.000 claims description 22
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 14
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 14
- 238000010276 construction Methods 0.000 claims description 10
- -1 AlN Chemical class 0.000 claims description 8
- 238000001259 photo etching Methods 0.000 claims description 7
- 229910002704 AlGaN Inorganic materials 0.000 claims description 6
- 229910002056 binary alloy Inorganic materials 0.000 claims description 4
- 229910002059 quaternary alloy Inorganic materials 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 239000000463 material Substances 0.000 abstract description 5
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- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 238000004020 luminiscence type Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 88
- 229910002601 GaN Inorganic materials 0.000 description 45
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 41
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- 238000005516 engineering process Methods 0.000 description 10
- 239000002019 doping agent Substances 0.000 description 9
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 8
- 238000005530 etching Methods 0.000 description 8
- 239000011777 magnesium Substances 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 6
- 230000008020 evaporation Effects 0.000 description 6
- 238000001704 evaporation Methods 0.000 description 6
- 229910052733 gallium Inorganic materials 0.000 description 6
- 239000001257 hydrogen Substances 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 6
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 6
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 5
- 230000006378 damage Effects 0.000 description 5
- 229910052749 magnesium Inorganic materials 0.000 description 5
- 239000011241 protective layer Substances 0.000 description 5
- 229910052594 sapphire Inorganic materials 0.000 description 5
- 239000010980 sapphire Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 4
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- 238000000927 vapour-phase epitaxy Methods 0.000 description 4
- 229910017083 AlN Inorganic materials 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 208000027418 Wounds and injury Diseases 0.000 description 3
- 229910021529 ammonia Inorganic materials 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 208000014674 injury Diseases 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- 230000005693 optoelectronics Effects 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical class [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- USZGMDQWECZTIQ-UHFFFAOYSA-N [Mg](C1C=CC=C1)C1C=CC=C1 Chemical compound [Mg](C1C=CC=C1)C1C=CC=C1 USZGMDQWECZTIQ-UHFFFAOYSA-N 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
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- 238000012986 modification Methods 0.000 description 2
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- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 208000019901 Anxiety disease Diseases 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910010093 LiAlO Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 125000002015 acyclic group Chemical group 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000036506 anxiety Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 238000007648 laser printing Methods 0.000 description 1
- YQNQTEBHHUSESQ-UHFFFAOYSA-N lithium aluminate Chemical compound [Li+].[O-][Al]=O YQNQTEBHHUSESQ-UHFFFAOYSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
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CN200810101681.5A CN101257080B (zh) | 2008-03-11 | 2008-03-11 | 氮化物基脊型发光二极管和激光器及制备方法 |
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CN200810101681.5A CN101257080B (zh) | 2008-03-11 | 2008-03-11 | 氮化物基脊型发光二极管和激光器及制备方法 |
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CN101257080A true CN101257080A (zh) | 2008-09-03 |
CN101257080B CN101257080B (zh) | 2014-10-15 |
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102545051A (zh) * | 2012-01-16 | 2012-07-04 | 苏州纳睿光电有限公司 | 一种氮化镓基激光器管芯的制备方法 |
CN102623598A (zh) * | 2011-01-26 | 2012-08-01 | Lg伊诺特有限公司 | 发光器件 |
CN103022892A (zh) * | 2012-12-14 | 2013-04-03 | 武汉电信器件有限公司 | 波长为808nm的大功率激光器芯片结构及其制作方法 |
CN104242055A (zh) * | 2013-06-19 | 2014-12-24 | 佳能株式会社 | 半导体dbr、半导体发光器件及制造半导体dbr 的方法 |
CN105048286A (zh) * | 2015-09-11 | 2015-11-11 | 厦门市三安光电科技有限公司 | 氮化镓基激光二极管及其制备方法 |
CN106887789A (zh) * | 2017-03-13 | 2017-06-23 | 中国科学院苏州纳米技术与纳米仿生研究所 | 半导体激光器及其制作方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE60230602D1 (de) * | 2001-03-28 | 2009-02-12 | Nichia Corp | Nitrid-halbleiterelement |
CN1219346C (zh) * | 2003-01-27 | 2005-09-14 | 中国科学院半导体研究所 | 窗口隔离型极小孔半导体激光器和制作方法 |
KR101221067B1 (ko) * | 2006-02-09 | 2013-01-11 | 삼성전자주식회사 | 리지 도파형 반도체 레이저 다이오드 |
-
2008
- 2008-03-11 CN CN200810101681.5A patent/CN101257080B/zh not_active Expired - Fee Related
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102623598A (zh) * | 2011-01-26 | 2012-08-01 | Lg伊诺特有限公司 | 发光器件 |
CN102623598B (zh) * | 2011-01-26 | 2016-04-27 | Lg伊诺特有限公司 | 发光器件 |
CN102545051A (zh) * | 2012-01-16 | 2012-07-04 | 苏州纳睿光电有限公司 | 一种氮化镓基激光器管芯的制备方法 |
CN103022892A (zh) * | 2012-12-14 | 2013-04-03 | 武汉电信器件有限公司 | 波长为808nm的大功率激光器芯片结构及其制作方法 |
CN103022892B (zh) * | 2012-12-14 | 2015-03-25 | 武汉电信器件有限公司 | 波长为808nm的大功率激光器芯片结构及其制作方法 |
CN104242055A (zh) * | 2013-06-19 | 2014-12-24 | 佳能株式会社 | 半导体dbr、半导体发光器件及制造半导体dbr 的方法 |
US9864106B2 (en) | 2013-06-19 | 2018-01-09 | Canon Kabushiki Kaisha | Semiconductor DBR, semiconductor light-emitting device, solid-state laser, photoacoustic apparatus, image-forming apparatus, and method for manufacturing semiconductor DBR |
CN105048286A (zh) * | 2015-09-11 | 2015-11-11 | 厦门市三安光电科技有限公司 | 氮化镓基激光二极管及其制备方法 |
CN106887789A (zh) * | 2017-03-13 | 2017-06-23 | 中国科学院苏州纳米技术与纳米仿生研究所 | 半导体激光器及其制作方法 |
CN106887789B (zh) * | 2017-03-13 | 2019-10-18 | 中国科学院苏州纳米技术与纳米仿生研究所 | 半导体激光器及其制作方法 |
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CN101257080B (zh) | 2014-10-15 |
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Inventor after: Li Ding Inventor after: Hu Xiaodong Inventor after: Zhang Guoyi Inventor after: Zhang Bei Inventor after: Yang Zhijian Inventor after: Kang Xiangning Inventor after: Li Rui Inventor after: Chen Weihua Inventor after: Zhao Lubing Inventor before: Hu Xiaodong Inventor before: Zhang Guoyi Inventor before: Zhang Bei Inventor before: Yang Zhijian Inventor before: Kang Xiangning Inventor before: Li Rui Inventor before: Chen Weihua Inventor before: Zhao Lubing Inventor before: Li Ding |
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Free format text: CORRECT: INVENTOR; FROM: HU XIAODONG ZHANG GUOYI ZHANG BEI YANG ZHIJIAN KANG XIANGNING LI RUI CHEN WEIHUA ZHAO LUBING LI DING TO: LI DING HU XIAODONG ZHANG GUOYI ZHANG BEI YANG ZHIJIAN KANG XIANGNING LI RUI CHEN WEIHUA ZHAO LUBING |
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Effective date of registration: 20131211 Address after: 523808 Guangdong province Dongguan Songshan Lake high tech Industrial Development Zone Technology Park Building 4 Building 417, room 418 Applicant after: DONGGUAN INSTITUTE OF OPTO-ELECTRONICS PEKING University Address before: 100871 Beijing the Summer Palace Road, Haidian District, No. 5 Applicant before: Peking University |
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