CN102593366B - 发光装置和电子装置 - Google Patents
发光装置和电子装置 Download PDFInfo
- Publication number
- CN102593366B CN102593366B CN201210022165.XA CN201210022165A CN102593366B CN 102593366 B CN102593366 B CN 102593366B CN 201210022165 A CN201210022165 A CN 201210022165A CN 102593366 B CN102593366 B CN 102593366B
- Authority
- CN
- China
- Prior art keywords
- light
- polarizing plate
- electrode
- emitting element
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000005540 biological transmission Effects 0.000 claims abstract description 51
- 239000000758 substrate Substances 0.000 claims description 89
- 150000002894 organic compounds Chemical class 0.000 claims description 40
- 239000000463 material Substances 0.000 claims description 35
- 229910000476 molybdenum oxide Inorganic materials 0.000 claims description 9
- 229910001925 ruthenium oxide Inorganic materials 0.000 claims description 7
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 claims description 7
- 229910001935 vanadium oxide Inorganic materials 0.000 claims description 7
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 claims description 6
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 claims description 6
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 claims description 6
- 229910001930 tungsten oxide Inorganic materials 0.000 claims description 6
- 239000002390 adhesive tape Substances 0.000 claims 5
- 229910044991 metal oxide Inorganic materials 0.000 claims 5
- 150000004706 metal oxides Chemical class 0.000 claims 5
- 238000004806 packaging method and process Methods 0.000 claims 5
- 230000009977 dual effect Effects 0.000 abstract description 57
- 238000010276 construction Methods 0.000 abstract description 5
- 239000010408 film Substances 0.000 description 119
- 239000010410 layer Substances 0.000 description 114
- 239000010409 thin film Substances 0.000 description 37
- 230000003287 optical effect Effects 0.000 description 31
- 238000000034 method Methods 0.000 description 28
- 230000002146 bilateral effect Effects 0.000 description 25
- 239000004065 semiconductor Substances 0.000 description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 17
- 238000009413 insulation Methods 0.000 description 16
- 230000001413 cellular effect Effects 0.000 description 15
- 230000007797 corrosion Effects 0.000 description 15
- 238000005260 corrosion Methods 0.000 description 15
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 13
- 239000012535 impurity Substances 0.000 description 13
- 238000010521 absorption reaction Methods 0.000 description 12
- 239000003990 capacitor Substances 0.000 description 12
- 238000002425 crystallisation Methods 0.000 description 12
- 239000011521 glass Substances 0.000 description 12
- 239000012212 insulator Substances 0.000 description 11
- 229910052814 silicon oxide Inorganic materials 0.000 description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- 239000002585 base Substances 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 10
- 230000000694 effects Effects 0.000 description 10
- 239000011229 interlayer Substances 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 230000005611 electricity Effects 0.000 description 9
- 238000002474 experimental method Methods 0.000 description 9
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 230000000750 progressive effect Effects 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 238000004544 sputter deposition Methods 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 8
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 8
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 8
- 239000000956 alloy Substances 0.000 description 7
- 239000013078 crystal Substances 0.000 description 7
- 230000005525 hole transport Effects 0.000 description 7
- 238000002347 injection Methods 0.000 description 7
- 239000007924 injection Substances 0.000 description 7
- 230000002829 reductive effect Effects 0.000 description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 7
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 230000008025 crystallization Effects 0.000 description 6
- 238000001704 evaporation Methods 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 239000004973 liquid crystal related substance Substances 0.000 description 6
- 238000011068 loading method Methods 0.000 description 6
- 229910052759 nickel Inorganic materials 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 238000007789 sealing Methods 0.000 description 6
- -1 that is Substances 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 239000004411 aluminium Substances 0.000 description 5
- 239000004020 conductor Substances 0.000 description 5
- 230000008020 evaporation Effects 0.000 description 5
- 230000006870 function Effects 0.000 description 5
- 238000005286 illumination Methods 0.000 description 5
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 230000009466 transformation Effects 0.000 description 5
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 5
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 4
- 125000000217 alkyl group Chemical group 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- XJHCXCQVJFPJIK-UHFFFAOYSA-M caesium fluoride Chemical compound [F-].[Cs+] XJHCXCQVJFPJIK-UHFFFAOYSA-M 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 4
- 238000012217 deletion Methods 0.000 description 4
- 230000037430 deletion Effects 0.000 description 4
- 210000004209 hair Anatomy 0.000 description 4
- 230000003760 hair shine Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000009434 installation Methods 0.000 description 4
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Inorganic materials [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Natural products C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 229910021332 silicide Inorganic materials 0.000 description 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 4
- 239000011701 zinc Substances 0.000 description 4
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 239000004952 Polyamide Substances 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 3
- SMWDFEZZVXVKRB-UHFFFAOYSA-N anhydrous quinoline Natural products N1=CC=CC2=CC=CC=C21 SMWDFEZZVXVKRB-UHFFFAOYSA-N 0.000 description 3
- 239000010405 anode material Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 239000010406 cathode material Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000010348 incorporation Methods 0.000 description 3
- 229910003437 indium oxide Inorganic materials 0.000 description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 229920002647 polyamide Polymers 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- YYMBJDOZVAITBP-UHFFFAOYSA-N rubrene Chemical compound C1=CC=CC=C1C(C1=C(C=2C=CC=CC=2)C2=CC=CC=C2C(C=2C=CC=CC=2)=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 YYMBJDOZVAITBP-UHFFFAOYSA-N 0.000 description 3
- 238000009738 saturating Methods 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 229910009372 YVO4 Inorganic materials 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- WZJYKHNJTSNBHV-UHFFFAOYSA-N benzo[h]quinoline Chemical compound C1=CN=C2C3=CC=CC=C3C=CC2=C1 WZJYKHNJTSNBHV-UHFFFAOYSA-N 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 210000004027 cell Anatomy 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 150000004696 coordination complex Chemical class 0.000 description 2
- VBVAVBCYMYWNOU-UHFFFAOYSA-N coumarin 6 Chemical compound C1=CC=C2SC(C3=CC4=CC=C(C=C4OC3=O)N(CC)CC)=NC2=C1 VBVAVBCYMYWNOU-UHFFFAOYSA-N 0.000 description 2
- 210000002858 crystal cell Anatomy 0.000 description 2
- 238000007872 degassing Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000002274 desiccant Substances 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 230000005283 ground state Effects 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 230000008595 infiltration Effects 0.000 description 2
- 238000001764 infiltration Methods 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 238000005499 laser crystallization Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229910001507 metal halide Inorganic materials 0.000 description 2
- 150000005309 metal halides Chemical class 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 230000000116 mitigating effect Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000010606 normalization Methods 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000000565 sealant Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 230000002269 spontaneous effect Effects 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 150000000183 1,3-benzoxazoles Chemical class 0.000 description 1
- ZVFJWYZMQAEBMO-UHFFFAOYSA-N 1h-benzo[h]quinolin-10-one Chemical compound C1=CNC2=C3C(=O)C=CC=C3C=CC2=C1 ZVFJWYZMQAEBMO-UHFFFAOYSA-N 0.000 description 1
- STTGYIUESPWXOW-UHFFFAOYSA-N 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline Chemical compound C=12C=CC3=C(C=4C=CC=CC=4)C=C(C)N=C3C2=NC(C)=CC=1C1=CC=CC=C1 STTGYIUESPWXOW-UHFFFAOYSA-N 0.000 description 1
- MVVGSPCXHRFDDR-UHFFFAOYSA-N 2-(1,3-benzothiazol-2-yl)phenol Chemical compound OC1=CC=CC=C1C1=NC2=CC=CC=C2S1 MVVGSPCXHRFDDR-UHFFFAOYSA-N 0.000 description 1
- UOCMXZLNHQBBOS-UHFFFAOYSA-N 2-(1,3-benzoxazol-2-yl)phenol zinc Chemical compound [Zn].Oc1ccccc1-c1nc2ccccc2o1.Oc1ccccc1-c1nc2ccccc2o1 UOCMXZLNHQBBOS-UHFFFAOYSA-N 0.000 description 1
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- DDWCHCMUKRIKJZ-UHFFFAOYSA-N 2-ethenylthiophene 1,1-dioxide Chemical compound C=CC1=CC=CS1(=O)=O DDWCHCMUKRIKJZ-UHFFFAOYSA-N 0.000 description 1
- 125000004860 4-ethylphenyl group Chemical group [H]C1=C([H])C(=C([H])C([H])=C1*)C([H])([H])C([H])([H])[H] 0.000 description 1
- SCZWJXTUYYSKGF-UHFFFAOYSA-N 5,12-dimethylquinolino[2,3-b]acridine-7,14-dione Chemical compound CN1C2=CC=CC=C2C(=O)C2=C1C=C1C(=O)C3=CC=CC=C3N(C)C1=C2 SCZWJXTUYYSKGF-UHFFFAOYSA-N 0.000 description 1
- UBIAVBGIRDRQLD-UHFFFAOYSA-N 5-methyl-1,3-benzoxazole Chemical compound CC1=CC=C2OC=NC2=C1 UBIAVBGIRDRQLD-UHFFFAOYSA-N 0.000 description 1
- 229910018575 Al—Ti Inorganic materials 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 1
- 238000001069 Raman spectroscopy Methods 0.000 description 1
- 239000007868 Raney catalyst Substances 0.000 description 1
- 229910000564 Raney nickel Inorganic materials 0.000 description 1
- 241000872198 Serjania polyphylla Species 0.000 description 1
- 229910007264 Si2H6 Inorganic materials 0.000 description 1
- 229910003910 SiCl4 Inorganic materials 0.000 description 1
- 229910004014 SiF4 Inorganic materials 0.000 description 1
- 229910003818 SiH2Cl2 Inorganic materials 0.000 description 1
- 229910003822 SiHCl3 Inorganic materials 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- PJANXHGTPQOBST-VAWYXSNFSA-N Stilbene Natural products C=1C=CC=CC=1/C=C/C1=CC=CC=C1 PJANXHGTPQOBST-VAWYXSNFSA-N 0.000 description 1
- UFLGIAIHIAPJJC-UHFFFAOYSA-N Tripelennamine Chemical compound C=1C=CC=NC=1N(CCN(C)C)CC1=CC=CC=C1 UFLGIAIHIAPJJC-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 125000005376 alkyl siloxane group Chemical group 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- GQVWHWAWLPCBHB-UHFFFAOYSA-L beryllium;benzo[h]quinolin-10-olate Chemical compound [Be+2].C1=CC=NC2=C3C([O-])=CC=CC3=CC=C21.C1=CC=NC2=C3C([O-])=CC=CC3=CC=C21 GQVWHWAWLPCBHB-UHFFFAOYSA-L 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- UFVXQDWNSAGPHN-UHFFFAOYSA-K bis[(2-methylquinolin-8-yl)oxy]-(4-phenylphenoxy)alumane Chemical compound [Al+3].C1=CC=C([O-])C2=NC(C)=CC=C21.C1=CC=C([O-])C2=NC(C)=CC=C21.C1=CC([O-])=CC=C1C1=CC=CC=C1 UFVXQDWNSAGPHN-UHFFFAOYSA-K 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 238000007600 charging Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000010281 constant-current constant-voltage charging Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000001723 curing Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229920002521 macromolecule Polymers 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920000172 poly(styrenesulfonic acid) Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 230000035807 sensation Effects 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- PJANXHGTPQOBST-UHFFFAOYSA-N stilbene Chemical compound C=1C=CC=CC=1C=CC1=CC=CC=C1 PJANXHGTPQOBST-UHFFFAOYSA-N 0.000 description 1
- 235000021286 stilbenes Nutrition 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 150000005846 sugar alcohols Polymers 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 150000003852 triazoles Chemical class 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/302—Details of OLEDs of OLED structures
- H10K2102/3023—Direction of light emission
- H10K2102/3031—Two-side emission, e.g. transparent OLEDs [TOLED]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003-417382 | 2003-12-15 | ||
| JP2003417382A JP4485184B2 (ja) | 2003-12-15 | 2003-12-15 | 発光装置および電子機器 |
| CN2004101020441A CN1630443B (zh) | 2003-12-15 | 2004-12-15 | 发光装置和电子装置 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2004101020441A Division CN1630443B (zh) | 2003-12-15 | 2004-12-15 | 发光装置和电子装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102593366A CN102593366A (zh) | 2012-07-18 |
| CN102593366B true CN102593366B (zh) | 2019-01-15 |
Family
ID=34650665
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210022165.XA Expired - Fee Related CN102593366B (zh) | 2003-12-15 | 2004-12-15 | 发光装置和电子装置 |
| CN2004101020441A Expired - Fee Related CN1630443B (zh) | 2003-12-15 | 2004-12-15 | 发光装置和电子装置 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2004101020441A Expired - Fee Related CN1630443B (zh) | 2003-12-15 | 2004-12-15 | 发光装置和电子装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US7750552B2 (enExample) |
| JP (1) | JP4485184B2 (enExample) |
| KR (1) | KR101114890B1 (enExample) |
| CN (2) | CN102593366B (enExample) |
Families Citing this family (100)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100594748C (zh) * | 2003-01-24 | 2010-03-17 | 株式会社半导体能源研究所 | 发光装置及其制造方法以及使用了上述发光装置的电气设备 |
| JP4526776B2 (ja) * | 2003-04-02 | 2010-08-18 | 株式会社半導体エネルギー研究所 | 発光装置及び電子機器 |
| JP2006523003A (ja) * | 2003-04-08 | 2006-10-05 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 両面発光装置に係る発明 |
| JP4614633B2 (ja) | 2003-04-09 | 2011-01-19 | 株式会社半導体エネルギー研究所 | 電子機器 |
| US8884845B2 (en) * | 2003-10-28 | 2014-11-11 | Semiconductor Energy Laboratory Co., Ltd. | Display device and telecommunication system |
| US7202504B2 (en) | 2004-05-20 | 2007-04-10 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element and display device |
| US8681140B2 (en) | 2004-05-21 | 2014-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic apparatus having the same |
| US9070647B2 (en) * | 2004-08-05 | 2015-06-30 | Au Optronics Corporation | Dual emitting method and device for active matrix organic electroluminescence |
| US8040469B2 (en) * | 2004-09-10 | 2011-10-18 | Semiconductor Energy Laboratory Co., Ltd. | Display device, method for manufacturing the same and apparatus for manufacturing the same |
| US7733448B2 (en) * | 2004-10-29 | 2010-06-08 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
| TWI391887B (zh) * | 2004-11-24 | 2013-04-01 | Semiconductor Energy Lab | 顯示裝置和其驅動方法 |
| US8269227B2 (en) | 2005-06-09 | 2012-09-18 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and electronic device |
| US7681234B2 (en) * | 2005-06-30 | 2010-03-16 | Microsoft Corporation | Preventing phishing attacks |
| US7676242B2 (en) * | 2005-07-12 | 2010-03-09 | Microsoft Corporation | Compact and durable thin smartphone |
| US7630741B2 (en) * | 2005-07-12 | 2009-12-08 | Microsoft Corporation | Compact and durable messenger device |
| KR100726645B1 (ko) | 2005-10-14 | 2007-06-11 | 엘지전자 주식회사 | 전계 발광소자 및 이의 제조방법 |
| US8217572B2 (en) | 2005-10-18 | 2012-07-10 | Semiconductor Energy Laboratory Co., Ltd. | Display device with prism layer |
| TWI398705B (zh) * | 2005-11-04 | 2013-06-11 | Semiconductor Energy Lab | 顯示裝置 |
| WO2007063782A1 (en) * | 2005-11-30 | 2007-06-07 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| WO2007072766A1 (en) * | 2005-12-22 | 2007-06-28 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| KR100774949B1 (ko) | 2005-12-26 | 2007-11-09 | 엘지전자 주식회사 | 전계발광소자와 그 제조방법 |
| EP1804114B1 (en) * | 2005-12-28 | 2014-03-05 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| EP1804115A1 (en) * | 2005-12-28 | 2007-07-04 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| TWI299634B (en) * | 2006-01-19 | 2008-08-01 | Au Optronics Corp | Dual emission organic electroluminescent device |
| KR100673765B1 (ko) | 2006-01-20 | 2007-01-24 | 삼성에스디아이 주식회사 | 유기전계발광 표시장치 및 그 제조방법 |
| US8038495B2 (en) | 2006-01-20 | 2011-10-18 | Samsung Mobile Display Co., Ltd. | Organic light-emitting display device and manufacturing method of the same |
| KR100635514B1 (ko) | 2006-01-23 | 2006-10-18 | 삼성에스디아이 주식회사 | 유기전계발광표시장치 및 그 제조방법 |
| JP4624309B2 (ja) * | 2006-01-24 | 2011-02-02 | 三星モバイルディスプレイ株式會社 | 有機電界発光表示装置及びその製造方法 |
| JP4456092B2 (ja) | 2006-01-24 | 2010-04-28 | 三星モバイルディスプレイ株式會社 | 有機電界発光表示装置及びその製造方法 |
| KR100671646B1 (ko) * | 2006-01-25 | 2007-01-19 | 삼성에스디아이 주식회사 | 유기 전계 발광 표시장치 및 그 제조 방법 |
| KR100685853B1 (ko) | 2006-01-25 | 2007-02-22 | 삼성에스디아이 주식회사 | 유기전계발광표시장치 및 그 제조방법 |
| US8164257B2 (en) * | 2006-01-25 | 2012-04-24 | Samsung Mobile Display Co., Ltd. | Organic light emitting display and method of fabricating the same |
| KR100688795B1 (ko) | 2006-01-25 | 2007-03-02 | 삼성에스디아이 주식회사 | 유기전계발광 표시장치 및 그 제조방법 |
| KR100671641B1 (ko) * | 2006-01-25 | 2007-01-19 | 삼성에스디아이 주식회사 | 유기 전계 발광 표시장치 및 그 제조 방법 |
| KR100688796B1 (ko) * | 2006-01-25 | 2007-03-02 | 삼성에스디아이 주식회사 | 유기전계발광 표시 장치 및 그의 제작 방법 |
| KR100732808B1 (ko) * | 2006-01-26 | 2007-06-27 | 삼성에스디아이 주식회사 | 유기전계발광 표시장치의 제조방법 |
| JP4633674B2 (ja) | 2006-01-26 | 2011-02-16 | 三星モバイルディスプレイ株式會社 | 有機電界発光表示装置及びその製造方法 |
| KR100671647B1 (ko) * | 2006-01-26 | 2007-01-19 | 삼성에스디아이 주식회사 | 유기전계발광 표시 장치 |
| KR100671639B1 (ko) * | 2006-01-27 | 2007-01-19 | 삼성에스디아이 주식회사 | 유기 전계 발광 표시장치 및 그 제조 방법 |
| KR100688790B1 (ko) * | 2006-01-27 | 2007-03-02 | 삼성에스디아이 주식회사 | 유기 전계 발광 표시장치 및 그 제조 방법 |
| EP1832915B1 (en) * | 2006-01-31 | 2012-04-18 | Semiconductor Energy Laboratory Co., Ltd. | Display device with improved contrast |
| EP1826604B1 (en) * | 2006-01-31 | 2015-12-23 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| KR20080092466A (ko) * | 2006-02-02 | 2008-10-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시장치 |
| EP1816508A1 (en) * | 2006-02-02 | 2007-08-08 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| US8640231B2 (en) * | 2006-02-23 | 2014-01-28 | Microsoft Corporation | Client side attack resistant phishing detection |
| EP1826605A1 (en) | 2006-02-24 | 2007-08-29 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| EP1826606B1 (en) * | 2006-02-24 | 2012-12-26 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| US7861229B2 (en) * | 2006-03-16 | 2010-12-28 | Microsoft Corporation | Complexity metrics for data schemas |
| KR100732817B1 (ko) | 2006-03-29 | 2007-06-27 | 삼성에스디아이 주식회사 | 유기전계발광 표시장치 및 그 제조방법 |
| KR100795797B1 (ko) * | 2006-05-16 | 2008-01-21 | 삼성에스디아이 주식회사 | 유기발광 표시장치 및 유기발광 표시장치의 전원공급부 |
| US20080006833A1 (en) * | 2006-06-02 | 2008-01-10 | Semiconductor Energy Laboratory Co., Ltd. | Lighting device and liquid crystal display device |
| TWI308805B (en) * | 2006-09-22 | 2009-04-11 | Innolux Display Corp | Active matrix oled and fabricating method incorporating the same |
| US7486213B2 (en) * | 2007-03-20 | 2009-02-03 | Broadcom Corporation | Method and system for increasing resolution and accuracy of an analog to digital converter |
| JP5270120B2 (ja) * | 2007-07-25 | 2013-08-21 | グローバル・オーエルイーディー・テクノロジー・リミテッド・ライアビリティ・カンパニー | デュアルディスプレイ装置 |
| US8013516B2 (en) * | 2008-01-23 | 2011-09-06 | Global Oled Technology Llc | LED device having improved power distribution |
| KR101416718B1 (ko) * | 2008-07-17 | 2014-07-09 | 삼성디스플레이 주식회사 | 유기전계발광표시장치 |
| KR100965258B1 (ko) * | 2008-08-27 | 2010-06-22 | 삼성모바일디스플레이주식회사 | 유기 발광 표시 장치 |
| CN101825244B (zh) * | 2009-03-02 | 2013-12-04 | 上海天马微电子有限公司 | 背光器件和液晶显示模块 |
| JP4983940B2 (ja) * | 2009-03-04 | 2012-07-25 | 住友化学株式会社 | 有機エレクトロルミネッセンス装置の製造方法 |
| JP5258666B2 (ja) * | 2009-04-22 | 2013-08-07 | 株式会社半導体エネルギー研究所 | 発光装置の作製方法および成膜用基板 |
| JP5672695B2 (ja) * | 2009-12-18 | 2015-02-18 | セイコーエプソン株式会社 | 表示装置 |
| KR101695376B1 (ko) * | 2010-10-22 | 2017-01-12 | 삼성디스플레이 주식회사 | 표시 장치 및 표시 장치의 제조 방법 |
| KR101843337B1 (ko) | 2010-10-28 | 2018-03-30 | 삼성전자주식회사 | 디스플레이 모듈 및 디스플레이 시스템 |
| CN103329625B (zh) * | 2011-02-07 | 2015-11-25 | 夏普株式会社 | 有机el显示装置及其制造方法 |
| KR101880184B1 (ko) * | 2011-02-14 | 2018-07-19 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광장치 |
| DE102011056836B4 (de) * | 2011-06-22 | 2020-12-24 | Lg Display Co., Ltd. | Organische lichtemittierende Anzeigevorrichtung |
| JPWO2013057873A1 (ja) * | 2011-10-18 | 2015-04-02 | 凸版印刷株式会社 | 有機エレクトロルミネセンスディスプレイパネル及びその製造方法 |
| TWI478333B (zh) * | 2012-01-30 | 2015-03-21 | Ind Tech Res Inst | 雙面發光顯示面板 |
| KR101919107B1 (ko) * | 2012-05-08 | 2018-11-16 | 삼성디스플레이 주식회사 | 표시 장치 |
| US9173272B2 (en) * | 2012-09-18 | 2015-10-27 | Lg Display Co., Ltd. | Organic electroluminescent display device and method for driving the same |
| CN102856392B (zh) * | 2012-10-09 | 2015-12-02 | 深圳市华星光电技术有限公司 | 薄膜晶体管主动装置及其制作方法 |
| US8825123B1 (en) | 2012-10-16 | 2014-09-02 | Juan Carlos Gudino | Passthrough case for a smart phone |
| US9104371B2 (en) * | 2012-12-07 | 2015-08-11 | Apple Inc. | Integrated visual notification system in an accessory device |
| KR102215622B1 (ko) * | 2013-11-18 | 2021-02-17 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
| US9691835B2 (en) * | 2013-12-24 | 2017-06-27 | Boe Technology Group Co., Ltd. | Double-face display panel |
| KR102169016B1 (ko) * | 2014-02-13 | 2020-10-23 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
| JP2015216072A (ja) | 2014-05-13 | 2015-12-03 | 株式会社ジャパンディスプレイ | 有機ｅｌ装置及びその製造方法 |
| DE102015103124B4 (de) * | 2015-03-04 | 2017-05-11 | Osram Oled Gmbh | Beidseitig emittierende organische Anzeigevorrichtungen und Verfahren zum Herstellen beidseitig emittierender organischer Anzeigevorrichtungen |
| KR102440078B1 (ko) | 2015-03-10 | 2022-09-06 | 삼성디스플레이 주식회사 | 편광판 및 이를 포함하는 표시장치 |
| KR20160118436A (ko) * | 2015-04-01 | 2016-10-12 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
| CN104765157B (zh) * | 2015-05-06 | 2017-12-08 | 京东方科技集团股份有限公司 | 显示面板及其显示方法、显示装置 |
| CN104914615A (zh) * | 2015-06-29 | 2015-09-16 | 京东方科技集团股份有限公司 | 一种显示装置及其制造方法 |
| KR102399724B1 (ko) | 2015-09-24 | 2022-05-20 | 삼성전자주식회사 | 디스플레이 장치, 그를 가지는 도어 및 냉장고 |
| KR102505585B1 (ko) * | 2015-12-31 | 2023-03-02 | 엘지디스플레이 주식회사 | 유기 발광 표시 패널 및 유기 발광 표시 장치 |
| JP2017138401A (ja) * | 2016-02-02 | 2017-08-10 | 大日本印刷株式会社 | 光学フィルム及び画像表示装置 |
| KR102651055B1 (ko) * | 2016-03-24 | 2024-03-26 | 삼성디스플레이 주식회사 | 광학 필름 및 디스플레이 장치 |
| KR102039216B1 (ko) * | 2016-07-18 | 2019-11-26 | 최해용 | 투명 전광판 장치 |
| US11782256B2 (en) * | 2016-09-21 | 2023-10-10 | Omnivision Technologies, Inc. | Endoscope imager and associated method |
| US10520782B2 (en) | 2017-02-02 | 2019-12-31 | James David Busch | Display devices, systems and methods capable of single-sided, dual-sided, and transparent mixed reality applications |
| KR102016565B1 (ko) * | 2017-11-30 | 2019-08-30 | 엘지디스플레이 주식회사 | 전계발광표시장치 |
| KR102511525B1 (ko) * | 2017-12-19 | 2023-03-17 | 엘지디스플레이 주식회사 | 표시장치 |
| KR102402173B1 (ko) * | 2017-12-19 | 2022-05-25 | 엘지디스플레이 주식회사 | 양방향 유기발광표시장치 |
| KR102490630B1 (ko) * | 2017-12-26 | 2023-01-20 | 엘지디스플레이 주식회사 | 접안 렌즈를 포함하는 디스플레이 장치 |
| CN109524570B (zh) * | 2018-12-26 | 2021-03-16 | 上海晶合光电科技有限公司 | 一种高对比度的有机电致发光器件及其制备方法 |
| CN109768461A (zh) * | 2019-03-21 | 2019-05-17 | 广州安特激光技术有限公司 | 一种1064nm激光器 |
| WO2022123378A1 (ja) | 2020-12-07 | 2022-06-16 | 株式会社半導体エネルギー研究所 | 表示装置およびその作製方法、および車両 |
| CN113299705B (zh) * | 2021-05-10 | 2023-02-07 | 深圳市华星光电半导体显示技术有限公司 | 双面显示面板及双面显示装置 |
| WO2023097506A1 (zh) * | 2021-11-30 | 2023-06-08 | 京东方科技集团股份有限公司 | 显示装置、显示面板及其制造方法 |
| CN115440786B (zh) * | 2022-10-09 | 2024-08-02 | 厦门天马显示科技有限公司 | 一种显示面板和显示装置 |
| WO2025210950A1 (ja) * | 2024-04-04 | 2025-10-09 | パナソニックＩｐマネジメント株式会社 | 表示装置 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1192846A (zh) * | 1995-08-11 | 1998-09-09 | 美国3M公司 | 使用多层光学薄膜的场致发光灯 |
| CN1399148A (zh) * | 2001-07-19 | 2003-02-26 | 日东电工株式会社 | 偏振片及其制备方法,保护膜,光学膜片和视觉显示器 |
| CN1437177A (zh) * | 2002-02-06 | 2003-08-20 | 株式会社日立制作所 | 有机发光显示器 |
Family Cites Families (45)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2779851B2 (ja) | 1989-11-30 | 1998-07-23 | 電気化学工業株式会社 | 焼結体の製造方法およびその製造装置 |
| JP3174367B2 (ja) | 1991-10-07 | 2001-06-11 | 日東電工株式会社 | 積層波長板及び円偏光板 |
| JP2692690B2 (ja) * | 1992-02-28 | 1997-12-17 | 日本精機株式会社 | 電界発光素子 |
| JP2761453B2 (ja) | 1993-11-17 | 1998-06-04 | 出光興産株式会社 | 有機ｅｌ素子および有機ｅｌパネル |
| KR100382057B1 (ko) * | 1995-03-17 | 2003-07-16 | 삼성에스디아이 주식회사 | 피엘지티평판디스플레이패널및그제조방법 |
| JPH09127885A (ja) * | 1995-10-30 | 1997-05-16 | Sony Corp | 表示素子 |
| JPH10255976A (ja) * | 1997-03-11 | 1998-09-25 | Matsushita Electric Ind Co Ltd | 発光素子およびその製造方法 |
| US6885147B2 (en) * | 1998-05-18 | 2005-04-26 | Emagin Corporation | Organic light emitting diode devices with improved anode stability |
| US6819309B1 (en) * | 1999-07-07 | 2004-11-16 | Canon Kabushiki Kaisha | Double-face display device |
| JP3950594B2 (ja) | 1999-09-03 | 2007-08-01 | ローム株式会社 | 表示装置 |
| JP2002040428A (ja) * | 1999-09-28 | 2002-02-06 | Stanley Electric Co Ltd | 液晶表示装置 |
| US6559594B2 (en) | 2000-02-03 | 2003-05-06 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device |
| WO2001080204A2 (en) | 2000-04-14 | 2001-10-25 | C-360, Inc. | Illuminated viewing assembly, viewing system including the illuminated viewing assembly, and method of viewing therefor |
| SG118118A1 (en) * | 2001-02-22 | 2006-01-27 | Semiconductor Energy Lab | Organic light emitting device and display using the same |
| TWI257828B (en) | 2001-05-31 | 2006-07-01 | Seiko Epson Corp | EL device, EL display, EL illumination apparatus, liquid crystal apparatus using the EL illumination apparatus and electronic apparatus |
| JP2002372623A (ja) * | 2001-06-14 | 2002-12-26 | Nitto Denko Corp | 複合位相差板、円偏光板及び液晶表示装置、有機ｅｌ表示装置 |
| JP2003029039A (ja) | 2001-07-17 | 2003-01-29 | Nitto Denko Corp | 円偏光板及び液晶表示装置 |
| JP3895952B2 (ja) * | 2001-08-06 | 2007-03-22 | 日本電気株式会社 | 半透過型液晶表示装置及びその製造方法 |
| TWI258317B (en) * | 2002-01-25 | 2006-07-11 | Semiconductor Energy Lab | A display device and method for manufacturing thereof |
| JP3757272B2 (ja) * | 2002-02-13 | 2006-03-22 | 国立大学法人富山大学 | 有機エレクトロルミネッセンス素子 |
| JP2005520193A (ja) | 2002-03-13 | 2005-07-07 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 二面表示装置 |
| JP3933591B2 (ja) * | 2002-03-26 | 2007-06-20 | 淳二 城戸 | 有機エレクトロルミネッセント素子 |
| US6691697B2 (en) | 2002-05-03 | 2004-02-17 | Hon Hai Precision Ind. Co., Ltd. | Method for cutting thin film filter work pieces |
| JP2003332068A (ja) * | 2002-05-15 | 2003-11-21 | Nitto Denko Corp | エレクトロルミネッセンス素子 |
| JP4217426B2 (ja) * | 2002-05-28 | 2009-02-04 | シャープ株式会社 | 両面表示装置 |
| JP2004095340A (ja) * | 2002-08-30 | 2004-03-25 | Seiko Instruments Inc | 自発光型表示装置 |
| JP4373331B2 (ja) | 2002-11-27 | 2009-11-25 | 株式会社半導体エネルギー研究所 | 表示装置 |
| US7265383B2 (en) | 2002-12-13 | 2007-09-04 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
| EP1577862B1 (en) | 2002-12-27 | 2014-01-22 | Semiconductor Energy Laboratory Co., Ltd. | Display and electronic device |
| CN100594748C (zh) | 2003-01-24 | 2010-03-17 | 株式会社半导体能源研究所 | 发光装置及其制造方法以及使用了上述发光装置的电气设备 |
| JP3791804B2 (ja) * | 2003-02-28 | 2006-06-28 | 株式会社半導体エネルギー研究所 | 表示装置、携帯端末及び折り畳み型携帯端末 |
| JP4531341B2 (ja) | 2003-02-28 | 2010-08-25 | 株式会社半導体エネルギー研究所 | 発光装置および電子機器 |
| JP4526776B2 (ja) | 2003-04-02 | 2010-08-18 | 株式会社半導体エネルギー研究所 | 発光装置及び電子機器 |
| TWI363574B (en) * | 2003-04-07 | 2012-05-01 | Semiconductor Energy Lab | Electronic apparatus |
| JP4614633B2 (ja) | 2003-04-09 | 2011-01-19 | 株式会社半導体エネルギー研究所 | 電子機器 |
| US7566902B2 (en) | 2003-05-16 | 2009-07-28 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device and electronic device |
| JP4131838B2 (ja) * | 2003-05-16 | 2008-08-13 | 株式会社半導体エネルギー研究所 | 表示装置 |
| JP4098747B2 (ja) * | 2003-05-28 | 2008-06-11 | 三星エスディアイ株式会社 | 両面発光型表示装置 |
| US7161185B2 (en) * | 2003-06-27 | 2007-01-09 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device |
| US7622863B2 (en) | 2003-06-30 | 2009-11-24 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device and electronic device including first and second light emitting elements |
| US7772756B2 (en) | 2003-08-01 | 2010-08-10 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device including a dual emission panel |
| JP4316960B2 (ja) | 2003-08-22 | 2009-08-19 | 株式会社半導体エネルギー研究所 | 装置 |
| JP2005149945A (ja) * | 2003-11-17 | 2005-06-09 | Nitto Denko Corp | 有機エレクトロルミネッセンス素子およびそれを用いた画像表示装置 |
| US7157156B2 (en) * | 2004-03-19 | 2007-01-02 | Eastman Kodak Company | Organic light emitting device having improved stability |
| WO2007063782A1 (en) * | 2005-11-30 | 2007-06-07 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
-
2003
- 2003-12-15 JP JP2003417382A patent/JP4485184B2/ja not_active Expired - Fee Related
-
2004
- 2004-12-02 US US11/001,024 patent/US7750552B2/en not_active Expired - Fee Related
- 2004-12-15 CN CN201210022165.XA patent/CN102593366B/zh not_active Expired - Fee Related
- 2004-12-15 KR KR1020040106305A patent/KR101114890B1/ko not_active Expired - Fee Related
- 2004-12-15 CN CN2004101020441A patent/CN1630443B/zh not_active Expired - Fee Related
-
2010
- 2010-06-03 US US12/793,225 patent/US8188655B2/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1192846A (zh) * | 1995-08-11 | 1998-09-09 | 美国3M公司 | 使用多层光学薄膜的场致发光灯 |
| CN1399148A (zh) * | 2001-07-19 | 2003-02-26 | 日东电工株式会社 | 偏振片及其制备方法,保护膜,光学膜片和视觉显示器 |
| CN1437177A (zh) * | 2002-02-06 | 2003-08-20 | 株式会社日立制作所 | 有机发光显示器 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR101114890B1 (ko) | 2014-02-21 |
| JP2005183006A (ja) | 2005-07-07 |
| JP4485184B2 (ja) | 2010-06-16 |
| CN1630443A (zh) | 2005-06-22 |
| US20100252825A1 (en) | 2010-10-07 |
| US8188655B2 (en) | 2012-05-29 |
| CN102593366A (zh) | 2012-07-18 |
| US20050127820A1 (en) | 2005-06-16 |
| US7750552B2 (en) | 2010-07-06 |
| CN1630443B (zh) | 2012-03-28 |
| KR20050060023A (ko) | 2005-06-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102593366B (zh) | 发光装置和电子装置 | |
| CN1897775B (zh) | 发光器件和电子器件 | |
| US8809838B2 (en) | Organic light emitting diode display | |
| KR101221340B1 (ko) | 발광 소자 | |
| US9564561B2 (en) | Light emitting device | |
| CN101615628B (zh) | 显示器件 | |
| JP2021106160A (ja) | 表示装置 | |
| TWI276019B (en) | Semiconductor device and manufacturing method thereof | |
| JP4731714B2 (ja) | 発光装置 | |
| US7417249B2 (en) | Semiconductor device having a wiring including an aluminum carbon alloy and titanium or molybdenum | |
| TW201002143A (en) | Display element, manufacturing method of the same and display device | |
| US7476908B2 (en) | Light emitting device | |
| TWI239790B (en) | Organic light-emitting device and fabrication method thereof | |
| JP4731715B2 (ja) | 発光装置の作製方法 | |
| WO2006046678A1 (en) | Composite material, light-emittintg element, light-emitting device, and manufacturing method thereof | |
| JP4515398B2 (ja) | 表示装置 | |
| WO2022200916A1 (ja) | 表示装置、表示装置の作製方法、表示モジュール、及び電子機器 | |
| JP2002319495A (ja) | 発光装置の作製方法 | |
| KR20170086157A (ko) | 유기 발광 소자, 이의 제조 방법 및 이를 포함하는 유기 발광 표시 장치 | |
| WO2022189908A1 (ja) | 表示装置 | |
| WO2022214916A1 (ja) | 表示装置、表示装置の作製方法、表示モジュール、電子機器 | |
| WO2022214904A1 (ja) | 表示装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20120718 |
|
| RJ01 | Rejection of invention patent application after publication | ||
| CI01 | Publication of corrected invention patent application |
Correction item: rejection of an application after its publication Correct: Dismiss False: Reject Number: 14 Volume: 33 |
|
| CI01 | Publication of corrected invention patent application | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20190115 Termination date: 20211215 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |