CN102576790B - 光电子部件 - Google Patents
光电子部件 Download PDFInfo
- Publication number
- CN102576790B CN102576790B CN201080044010.5A CN201080044010A CN102576790B CN 102576790 B CN102576790 B CN 102576790B CN 201080044010 A CN201080044010 A CN 201080044010A CN 102576790 B CN102576790 B CN 102576790B
- Authority
- CN
- China
- Prior art keywords
- carrier
- optoelectronic
- semiconductor chip
- optoelectronic semiconductor
- optoelectronic component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/8506—Containers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48471—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area being a ball bond, i.e. wedge-to-ball, reverse stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
- H01L25/0753—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/16—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/018—Bonding of wafers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/852—Encapsulations
- H10H20/853—Encapsulations characterised by their shape
Landscapes
- Led Device Packages (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102009047878.7 | 2009-09-30 | ||
| DE102009047878 | 2009-09-30 | ||
| DE102009051746A DE102009051746A1 (de) | 2009-09-30 | 2009-11-03 | Optoelektronisches Bauelement |
| DE102009051746.4 | 2009-11-03 | ||
| PCT/EP2010/062733 WO2011039023A1 (de) | 2009-09-30 | 2010-08-31 | Optoelektronisches bauelement |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102576790A CN102576790A (zh) | 2012-07-11 |
| CN102576790B true CN102576790B (zh) | 2016-08-03 |
Family
ID=43662656
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201080044010.5A Expired - Fee Related CN102576790B (zh) | 2009-09-30 | 2010-08-31 | 光电子部件 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US8853732B2 (enExample) |
| EP (1) | EP2483937B1 (enExample) |
| JP (1) | JP2013506976A (enExample) |
| KR (1) | KR20120091173A (enExample) |
| CN (1) | CN102576790B (enExample) |
| DE (1) | DE102009051746A1 (enExample) |
| TW (1) | TW201126775A (enExample) |
| WO (1) | WO2011039023A1 (enExample) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102011105010A1 (de) * | 2011-06-20 | 2012-12-20 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauelement und Verfahren zu dessen Herstellung |
| DE102012200416B4 (de) | 2012-01-12 | 2018-03-01 | Osram Opto Semiconductors Gmbh | Optoelektronisches modul und verfahren zur herstellung eines optoelektronischen moduls |
| DE102012101463A1 (de) | 2012-02-23 | 2013-08-29 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen eines optoelektronischen Bauelements und derart hergestelltes optoelektronisches Bauelement |
| DE102012108160A1 (de) | 2012-09-03 | 2014-03-06 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements |
| DE102014101492A1 (de) | 2014-02-06 | 2015-08-06 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauelement |
| DE102014101489B4 (de) * | 2014-02-06 | 2023-03-02 | Pictiva Displays International Limited | Verfahren zur Herstellung einer optoelektronischen Anordnung |
| DE102015208704A1 (de) * | 2015-05-11 | 2016-11-17 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauteil |
| DE102015114010A1 (de) * | 2015-08-24 | 2017-03-02 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement, Verfahren zur Herstellung eines optoelektronischen Bauelements und Verfahren zum Betrieb eines optoelektronischen Bauelements |
| DE102015118433A1 (de) * | 2015-10-28 | 2017-05-04 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zu seiner Herstellung |
| KR102487685B1 (ko) * | 2015-11-10 | 2023-01-16 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 발광 소자 및 이를 구비한 조명 장치 |
| DE102016104383A1 (de) * | 2016-03-10 | 2017-09-14 | Osram Opto Semiconductors Gmbh | Verfahren und optoelektronische Leuchtvorrichtung zum Beleuchten eines Gesichts einer Person sowie Kamera und mobiles Endgerät |
| DE102016108682A1 (de) * | 2016-05-11 | 2017-11-16 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Bauelements und optoelektronisches Bauelement |
| DE102018101582B4 (de) * | 2018-01-24 | 2022-10-13 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Strahlung emittierende Vorrichtung |
| KR102567568B1 (ko) * | 2018-04-06 | 2023-08-16 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 반도체 소자 패키지 |
| EP3591345B1 (de) * | 2018-07-02 | 2020-11-11 | Dr. Johannes Heidenhain GmbH | Verfahren zur herstellung einer lichtquelle für eine sensoreinheit einer positionsmesseinrichtung sowie eine positionsmesseinrichtung |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1761079A (zh) * | 2004-08-31 | 2006-04-19 | 丰田合成株式会社 | 光发射装置和光发射元件 |
| WO2006054616A1 (en) * | 2004-11-22 | 2006-05-26 | Matsushita Electric Industrial Co., Ltd. | Light-emitting device, light-emitting module, display unit, lighting unit and method for manufacturing light-emitting device |
| US20070221935A1 (en) * | 2006-03-24 | 2007-09-27 | Advanced Optoelectronic Technology Inc. | Package structure of light-emitting diode |
| US20070272940A1 (en) * | 2003-06-27 | 2007-11-29 | Lee Kong W | Semiconductor device with a light emitting semiconductor die |
| US20080258168A1 (en) * | 2007-04-18 | 2008-10-23 | Samsung Electronics Co, Ltd. | Semiconductor light emitting device packages and methods |
Family Cites Families (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI289944B (en) | 2000-05-26 | 2007-11-11 | Osram Opto Semiconductors Gmbh | Light-emitting-diode-element with a light-emitting-diode-chip |
| JP2002335020A (ja) | 2001-05-10 | 2002-11-22 | Nichia Chem Ind Ltd | 発光装置 |
| JP4876356B2 (ja) | 2001-09-05 | 2012-02-15 | ソニー株式会社 | 回路素子内蔵基板の製造方法、並びに電気回路装置の製造方法 |
| US8455994B2 (en) * | 2002-01-31 | 2013-06-04 | Imbera Electronics Oy | Electronic module with feed through conductor between wiring patterns |
| DE10233050B4 (de) * | 2002-07-19 | 2012-06-14 | Osram Opto Semiconductors Gmbh | Lichtquelle auf LED-Basis für die Erzeugung von Licht unter Ausnutzung des Farbmischprinzips |
| JP2004363279A (ja) | 2003-06-04 | 2004-12-24 | Sony Corp | 光電変換装置の製造方法、並びにその製造に用いる疑似ウェーハの製造方法 |
| JP4458804B2 (ja) * | 2003-10-17 | 2010-04-28 | シチズン電子株式会社 | 白色led |
| JP2005322722A (ja) * | 2004-05-07 | 2005-11-17 | Korai Kagi Kofun Yugenkoshi | 発光ダイオード |
| JP4996463B2 (ja) * | 2004-06-30 | 2012-08-08 | クリー インコーポレイテッド | 発光デバイスをパッケージするためのチップスケール方法およびチップスケールにパッケージされた発光デバイス |
| US8482663B2 (en) | 2004-06-30 | 2013-07-09 | Osram Opto Semiconductors Gmbh | Light-emitting diode arrangement, optical recording device and method for the pulsed operation of at least one light-emitting diode |
| JP2006100787A (ja) | 2004-08-31 | 2006-04-13 | Toyoda Gosei Co Ltd | 発光装置および発光素子 |
| DE102004050371A1 (de) * | 2004-09-30 | 2006-04-13 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement mit einer drahtlosen Kontaktierung |
| JP2006313825A (ja) * | 2005-05-09 | 2006-11-16 | Sony Corp | 表示装置および表示装置の製造方法 |
| US7754507B2 (en) | 2005-06-09 | 2010-07-13 | Philips Lumileds Lighting Company, Llc | Method of removing the growth substrate of a semiconductor light emitting device |
| CN100472830C (zh) * | 2005-08-25 | 2009-03-25 | 夏普株式会社 | 半导体发光器件制造方法 |
| TWI418054B (zh) * | 2006-08-08 | 2013-12-01 | Lg電子股份有限公司 | 發光裝置封裝與製造此封裝之方法 |
| KR101271225B1 (ko) * | 2006-10-31 | 2013-06-03 | 삼성디스플레이 주식회사 | 발광 다이오드 칩 및 발광 다이오드 광원 모듈의 제조 방법 |
| TWI320608B (en) * | 2006-12-06 | 2010-02-11 | Chipmos Technologies Inc | Light emitting chip package and light source module |
| KR100947454B1 (ko) * | 2006-12-19 | 2010-03-11 | 서울반도체 주식회사 | 다단 구조의 열전달 슬러그 및 이를 채용한 발광 다이오드패키지 |
| DE102007022947B4 (de) * | 2007-04-26 | 2022-05-05 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen |
| JP5158472B2 (ja) | 2007-05-24 | 2013-03-06 | スタンレー電気株式会社 | 半導体発光装置 |
| DE102007030129A1 (de) | 2007-06-29 | 2009-01-02 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung einer Mehrzahl optoelektronischer Bauelemente und optoelektronisches Bauelement |
| JP2009049267A (ja) | 2007-08-22 | 2009-03-05 | Toshiba Corp | 半導体発光素子及びその製造方法 |
| JP2009117536A (ja) * | 2007-11-05 | 2009-05-28 | Towa Corp | 樹脂封止発光体及びその製造方法 |
| JP5526782B2 (ja) * | 2007-11-29 | 2014-06-18 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
| US20090173956A1 (en) * | 2007-12-14 | 2009-07-09 | Philips Lumileds Lighting Company, Llc | Contact for a semiconductor light emitting device |
| TW201114003A (en) * | 2008-12-11 | 2011-04-16 | Xintec Inc | Chip package structure and method for fabricating the same |
| US7838878B2 (en) * | 2009-03-24 | 2010-11-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor-based sub-mounts for optoelectronic devices with conductive paths to facilitate testing and binning |
| CN102954401B (zh) * | 2011-08-23 | 2015-01-14 | 松下电器产业株式会社 | Led单元以及使用该led单元的照明装置 |
-
2009
- 2009-11-03 DE DE102009051746A patent/DE102009051746A1/de not_active Withdrawn
-
2010
- 2010-08-31 CN CN201080044010.5A patent/CN102576790B/zh not_active Expired - Fee Related
- 2010-08-31 JP JP2012531310A patent/JP2013506976A/ja active Pending
- 2010-08-31 WO PCT/EP2010/062733 patent/WO2011039023A1/de not_active Ceased
- 2010-08-31 US US13/499,622 patent/US8853732B2/en not_active Expired - Fee Related
- 2010-08-31 EP EP10749639.0A patent/EP2483937B1/de not_active Not-in-force
- 2010-08-31 KR KR1020127011272A patent/KR20120091173A/ko not_active Withdrawn
- 2010-09-20 TW TW099131809A patent/TW201126775A/zh unknown
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070272940A1 (en) * | 2003-06-27 | 2007-11-29 | Lee Kong W | Semiconductor device with a light emitting semiconductor die |
| CN1761079A (zh) * | 2004-08-31 | 2006-04-19 | 丰田合成株式会社 | 光发射装置和光发射元件 |
| WO2006054616A1 (en) * | 2004-11-22 | 2006-05-26 | Matsushita Electric Industrial Co., Ltd. | Light-emitting device, light-emitting module, display unit, lighting unit and method for manufacturing light-emitting device |
| US20070221935A1 (en) * | 2006-03-24 | 2007-09-27 | Advanced Optoelectronic Technology Inc. | Package structure of light-emitting diode |
| US20080258168A1 (en) * | 2007-04-18 | 2008-10-23 | Samsung Electronics Co, Ltd. | Semiconductor light emitting device packages and methods |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20120091173A (ko) | 2012-08-17 |
| TW201126775A (en) | 2011-08-01 |
| US8853732B2 (en) | 2014-10-07 |
| EP2483937A1 (de) | 2012-08-08 |
| WO2011039023A1 (de) | 2011-04-07 |
| DE102009051746A1 (de) | 2011-03-31 |
| EP2483937B1 (de) | 2019-01-09 |
| JP2013506976A (ja) | 2013-02-28 |
| US20120248492A1 (en) | 2012-10-04 |
| CN102576790A (zh) | 2012-07-11 |
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