CN102473704A - 用于制造发光机构的方法和发光机构 - Google Patents

用于制造发光机构的方法和发光机构 Download PDF

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Publication number
CN102473704A
CN102473704A CN2010800331752A CN201080033175A CN102473704A CN 102473704 A CN102473704 A CN 102473704A CN 2010800331752 A CN2010800331752 A CN 2010800331752A CN 201080033175 A CN201080033175 A CN 201080033175A CN 102473704 A CN102473704 A CN 102473704A
Authority
CN
China
Prior art keywords
light
radiation
semiconductors
semiconductor
emitting diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2010800331752A
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English (en)
Chinese (zh)
Inventor
贝特霍尔德·哈恩
马库斯·毛特
西格弗里德·赫尔曼
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of CN102473704A publication Critical patent/CN102473704A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/01—Manufacture or treatment
    • H10H29/036—Manufacture or treatment of packages
    • H10H29/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/01—Manufacture or treatment
    • H10H29/036—Manufacture or treatment of packages
    • H10H29/0361—Manufacture or treatment of packages of wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means

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  • Led Device Packages (AREA)
  • Led Devices (AREA)
CN2010800331752A 2009-07-20 2010-07-16 用于制造发光机构的方法和发光机构 Pending CN102473704A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102009033915.9 2009-07-20
DE102009033915.9A DE102009033915B4 (de) 2009-07-20 2009-07-20 Verfahren zur Herstellung eines Leuchtmittels und Leuchtmittel
PCT/EP2010/060345 WO2011009821A1 (de) 2009-07-20 2010-07-16 Verfahren zur herstellung eines leuchtmittels und leuchtmittel

Publications (1)

Publication Number Publication Date
CN102473704A true CN102473704A (zh) 2012-05-23

Family

ID=43016842

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2010800331752A Pending CN102473704A (zh) 2009-07-20 2010-07-16 用于制造发光机构的方法和发光机构

Country Status (6)

Country Link
EP (1) EP2457254B1 (https=)
JP (1) JP5813636B2 (https=)
KR (1) KR20120038511A (https=)
CN (1) CN102473704A (https=)
DE (1) DE102009033915B4 (https=)
WO (1) WO2011009821A1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105229802A (zh) * 2013-03-25 2016-01-06 欧司朗光电半导体有限公司 用于制造发射电磁辐射的组件的方法和发射电磁辐射的组件
CN113937093A (zh) * 2014-07-31 2022-01-14 脸谱科技有限责任公司 硅基彩色iled显示器

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102012202928A1 (de) * 2012-02-27 2013-08-29 Osram Gmbh Lichtquelle mit led-chip und leuchtstoffschicht
KR102732448B1 (ko) 2018-11-27 2024-11-21 삼성전자주식회사 마이크로 광원 어레이, 이를 포함한 디스플레이 장치 및 디스플레이 장치의 제조 방법

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0977063A1 (en) * 1998-07-28 2000-02-02 Interuniversitair Micro-Elektronica Centrum Vzw A socket and a system for optoelectronic interconnection and a method of fabricating such socket and system
EP1115155A2 (en) * 1999-12-28 2001-07-11 Matsushita Electric Industrial Co., Ltd. Optical information processing apparatus
US20050212406A1 (en) * 2004-03-29 2005-09-29 Daniels John J Photo-radiation source
TW200836375A (en) * 2006-11-20 2008-09-01 Nikon Corp LED device and the fabricating method thereof

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5940683A (en) * 1996-01-18 1999-08-17 Motorola, Inc. LED display packaging with substrate removal and method of fabrication
JP3473396B2 (ja) * 1998-04-23 2003-12-02 松下電器産業株式会社 光情報処理装置
JP4182661B2 (ja) * 2001-10-31 2008-11-19 ソニー株式会社 画像表示装置及びその製造方法
JP2005093649A (ja) * 2003-09-17 2005-04-07 Oki Data Corp 半導体複合装置、ｌｅｄプリントヘッド、及び、それを用いた画像形成装置
CN1622730A (zh) * 2004-12-16 2005-06-01 新磊微制造股份有限公司 发光模块
DE102007010244A1 (de) * 2007-02-02 2008-08-07 Osram Opto Semiconductors Gmbh Anordnung und Verfahren zur Erzeugung von Mischlicht
JP2008262993A (ja) * 2007-04-10 2008-10-30 Nikon Corp 表示装置
EP1988577B1 (en) * 2007-04-30 2017-04-05 Tridonic Jennersdorf GmbH Light emitting diode module with silicon platform

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0977063A1 (en) * 1998-07-28 2000-02-02 Interuniversitair Micro-Elektronica Centrum Vzw A socket and a system for optoelectronic interconnection and a method of fabricating such socket and system
EP1115155A2 (en) * 1999-12-28 2001-07-11 Matsushita Electric Industrial Co., Ltd. Optical information processing apparatus
US20050212406A1 (en) * 2004-03-29 2005-09-29 Daniels John J Photo-radiation source
TW200836375A (en) * 2006-11-20 2008-09-01 Nikon Corp LED device and the fabricating method thereof

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
TAKAHASHI K ET AL: "High density LED display panel on silicon microreflector and integrated circuit", 《ELECTRONIC MANUFACTURING TECHNOLOGY SYMPOSIUM》 *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105229802A (zh) * 2013-03-25 2016-01-06 欧司朗光电半导体有限公司 用于制造发射电磁辐射的组件的方法和发射电磁辐射的组件
CN105229802B (zh) * 2013-03-25 2017-10-13 欧司朗光电半导体有限公司 用于制造发射电磁辐射的组件的方法和发射电磁辐射的组件
US9799795B2 (en) 2013-03-25 2017-10-24 Osram Opto Semiconductors Gmbh Method for producing an assembly emitting electromagnetic radiation, and assembly emitting electromagnetic radiation
CN113937093A (zh) * 2014-07-31 2022-01-14 脸谱科技有限责任公司 硅基彩色iled显示器

Also Published As

Publication number Publication date
KR20120038511A (ko) 2012-04-23
DE102009033915B4 (de) 2022-05-25
WO2011009821A1 (de) 2011-01-27
EP2457254B1 (de) 2020-03-18
JP5813636B2 (ja) 2015-11-17
JP2012533895A (ja) 2012-12-27
DE102009033915A1 (de) 2011-01-27
EP2457254A1 (de) 2012-05-30

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Application publication date: 20120523