TW200836375A - LED device and the fabricating method thereof - Google Patents

LED device and the fabricating method thereof Download PDF

Info

Publication number
TW200836375A
TW200836375A TW096143767A TW96143767A TW200836375A TW 200836375 A TW200836375 A TW 200836375A TW 096143767 A TW096143767 A TW 096143767A TW 96143767 A TW96143767 A TW 96143767A TW 200836375 A TW200836375 A TW 200836375A
Authority
TW
Taiwan
Prior art keywords
substrate
led
layer
light
structure layer
Prior art date
Application number
TW096143767A
Other languages
Chinese (zh)
Other versions
TWI420691B (en
Inventor
Takeshi Yagi
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Publication of TW200836375A publication Critical patent/TW200836375A/en
Application granted granted Critical
Publication of TWI420691B publication Critical patent/TWI420691B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/0502—Disposition
    • H01L2224/05023—Disposition the whole internal layer protruding from the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0556—Disposition
    • H01L2224/05568—Disposition the whole external layer protruding from the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/0601—Structure
    • H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/061—Disposition
    • H01L2224/06102—Disposition the bonding areas being at different heights
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil

Abstract

A LED chip 1 includes: a second substrate 2 which a light of a specific wavelength band can go through; a LED fabric layer 10 which includes an emitting layer 6; and a phosphor layer 4 which positioned between the second substrate 2 and the LED fabric layer 10. For fabricating the LED chip 1, the LED fabric layer 10 is grown on a first substrate, the phosphor layer 4 is grown on the second substrate 2, and a third substrate is connected on the LED fabric layer 10. Then, the first substrate on the LED fabric layer 10 is removed and the second substrate 2 which includes the phosphor layer 4 is connected, therefore the LED fabric layer 10 is in touch with the phosphor layer 4.

Description

200836375 26216pif 九、發明說明： 【發明所屬之技術領域】 本發明是關於一種LED裝置及其製造方法。 【先前技術】 一直以來，含有如下LED元件的LED裝置已為人所 知，該LED元件具有發光層及螢光層，該螢光層中含有受 - 到來自上述發光層的光的激發而發出不同波長的光的螢光 _ 物質。 例如，於下述專利文獻1中，揭示有作為LED裝置的 白色LED燈’该LED裝置包含LED元件，該LED元件 具有叙光層及螢光層，其中，該發光層發出藍色光，該螢 光層中含有受到上述監色光的激發而發出與藍色具有互補 關係的黃綠色的光的螢光物質。該LED裝置中，從上述發 光層發出並直接以藍色光透過上述螢光層的光、與因上述 螢光層的螢光物質而轉變為黃綠色光的光相混合，由此， 馨 觀察者可看見白色光。該LED裝置中，藉由透明基板及形 成於該基板之一個面上的led結構層（包含發光層）而構 - 成一個LED晶片。並且，該LED晶片的上述LED結構層 ^ 格載於作為矽二極體元件基板（子基板元件）侧的上述矽 二極體元件基板上，上述螢光層以覆蓋上述LED晶片的方 式而塗佈，上述led晶片以上述矽二極體元件基板為承托 而配置在上述矽二極體元件基板上。因此，該LED裝置 中，上述螢光層只要未被保護膜等特別覆蓋，則會露出到 外部。 200836375 26216pif 並且，於下述專利文獻〗中，揭示有一較佳方案，即， 由於白色色度依賴於上述螢光層的厚度，因此，為了抑制 白色色度之不均，以提高所要求的色度的生產良率，而使 上述螢光物質的膜厚精確且均勻。進一步，於下述專利文 獻1中，揭示有一技術，即，為了使上述螢光物質的膜厚 精確且均勻，具體的製造方法為：利用絲網印刷（咖sc· printing)而形成上述螢光物質，或者在上述螢光物質形成200836375 26216pif IX. Description of the Invention: [Technical Field] The present invention relates to an LED device and a method of manufacturing the same. [Prior Art] Conventionally, an LED device including an LED element having a light-emitting layer and a phosphor layer containing excitation by light from the above-mentioned light-emitting layer is known Fluorescent _ substances of different wavelengths of light. For example, Patent Document 1 discloses a white LED lamp as an LED device. The LED device includes an LED element having a light-streating layer and a fluorescent layer, wherein the light-emitting layer emits blue light. The light layer contains a fluorescent substance that is excited by the above-mentioned color light to emit yellow-green light having a complementary relationship with blue. In the LED device, light emitted from the light-emitting layer and directly transmitted through the fluorescent layer by blue light is mixed with light converted into yellow-green light by the fluorescent substance of the fluorescent layer, whereby the observer is White light can be seen. In the LED device, an LED chip is constructed by a transparent substrate and a led structure layer (including a light-emitting layer) formed on one surface of the substrate. Further, the LED structure layer of the LED wafer is mounted on the germanium diode device substrate on the side of the germanium diode device substrate (sub-substrate element), and the phosphor layer is coated to cover the LED chip. In the cloth, the LED wafer is placed on the germanium diode element substrate with the germanium diode element substrate as a support. Therefore, in the LED device, the phosphor layer is exposed to the outside as long as it is not particularly covered by a protective film or the like. Further, in the following patent document, a preferred embodiment is disclosed in which, since the white chromaticity depends on the thickness of the above-mentioned phosphor layer, in order to suppress the unevenness of white chromaticity, the desired color is improved. The production yield of the above is such that the film thickness of the above-mentioned fluorescent substance is precise and uniform. Further, in Patent Document 1 below, there is disclosed a technique in which a specific manufacturing method is to form the above-described fluorescent light by screen printing in order to make the film thickness of the fluorescent material precise and uniform. Substance, or formation of the above-mentioned fluorescent substance

之说研磨LED晶片的透明基板，或者在上述榮光物質形成 之後研磨螢光物質等。 ' 又，例如，於下述專利文獻2中，揭示有作為LED裝 置的發光裝置或顯示裝置（顯示器），該LED裝 元件’該LHD元件具有發光層及螢光層，/中置= 發出紫外光，該螢光層巾含有受到上職外光的激發而^ 出可見光的螢光物質。_ LED裝置中，在基板上形成^ LH)結構層（包含發光層），上述螢光層形成在與上述基 板的上述LED結構層相反側的面上，或者與上述[ED妹 構層的上述基板相反侧的面上。因此，該led穿置中 述螢光層只要未被保護膜特別覆蓋，亦會露2到外部^ [專利文獻1]日本專利特開2001-15817號公報 [專利文獻2]日本專利特表平u_51〇968號公報 然而，如上所述，於上述習知的LED裝置中，由於 述螢光層只要未被保護膜等特別覆蓋則會露出到外； 此螢光層會受到外部的影響（例如濕氣）而劣化，而且 LED裝置的耐久性會降低。 200836375 26216pif _又’在製造LED裝置時’根據上述專利文獻}中的揭 不’即使利用絲網印刷而形成螢光層或者引入研磨步驟， 亦難以使上述备光物質的膜厚非常精確且均句。因此，無 法=產品間（亦可為含有多個LED元件的產品中，相同產 5中的led元件之間）充分地降低發光色或發光強度之不 均，而且無法充分地提高良率。 . 【發明内容】 修 本發明是鑒於以上情況研製而成的，其目的在於提供 1 LED U ’可在沒有制的保賴等覆蓋的情況下降 低外部對榮光層的影響，而且可提高耐久性。 又，本發明之目的在於提供一種LED裝置之製造方 法，該製造方法能夠製造出可提高上述耐久性的led裝 置而且可使螢光層的厚度更加精確且均勾，因此可進一 步提高良率。 、為了解決上述問題’本發明提供一種1^]：)裝置之製造 • f法，其特徵在於包括以Μ段：在第1基板上，形成包 t發光層且構成LED元件的LED結構層；树過特定波 分 段（WaVdength band)之光的第2基板上，形成螢光層， . 錢光層巾含有受·自上述發光層的光的激發而發出不 间波長的光的螢錢質；在上述第丨基板的上述咖結構 層上，接合第3基板；從接合著上述第3基板的上述led 、、口構層上去除上述第1基板；以及在接合著上述第3基板 且去除了上述第1基板的上述LED結構層上，接合且備上 述螢光層的上述第2基板，以使上述LED結構層與上述螢 200836375 26216pif 光層接觸。 又，本發明提供一種LED裝置之製造方法，其特徵在 於包括以下階段：在第1基板上，形成包含發光層且構成 LED元件的LED結構層；在透過特定波段的光的第2基 板上，形成螢光層，該螢光層中含有受到來自上述發光層 的光的激發而發出不同波長的光的螢光物質；在形成於上 述f 1基板上的上述LED結構層上，接合第3基板；從接 合著上述第3基板的上述LED結構層上去除上述第丨基 板；在接合著上述第3基板且去除了上述第〗基板的上述 LED結構層上，接合形成於上述第2基板上的上述螢光 層；以及將具有上述第2基板、形成於上述第2基板上的 上述螢光層、及上述LED結構層的接合體，分割為含有一 個或一個以上的上述LED元件的部分。 又’本發明的LED裝置之較佳製造方法更包括以下階 段：在將上述LED結構層與上述螢光層進行接合的上述階 段之後，從上述LED結構層上去除上述第3基板。當包括 分割上述接合體的階段時，從上述LED結構層上去^上述 第3基板的較佳階段為’在上述LED結構層與上述螢光層 進行接合的上述階段之後，且在上述分割的階段之前。曰 又，本發明的LED裝置之製造方法中，更包括以下階 段：準備電路基板，該電路基板上搭載有驅動上述LED元 件的驅動電路’·以及在將上述LED結構層與上述螢光層進 行接合的上述階段之後，將上述LED結構層或者上述^ 3 基板與上述電路基板進行接合。此處，所謂「將LED結構 200836375 26216pif 層或者上述第3基板與上述電路 ='=2電路基㈣性連接，或者經㈣3」基 …構層與電路基板電性連接 Γ在方ΓΛ包括分割上述接合體的階段時，較佳 :在如顧段之前，進行將上述le 述第3基板與上述電路基板接合的階段。進—久當^ 造:1基板的階段時，較佳 ,比抓▲ 除上心基板的階段之後且在上述分割 =切’贿將以LED結·與上料喊板接合的 本發_咖裝置之製造方法巾，上 電路基板贿佳。此時，於上述分騰段，分割更具有^ 上述LED結構層接合紅述電路基板的上雜合體則較 佳0 、 θ又，更佳的情況為’作為上述第3基板的上述電路基 板疋搭載有驅動上述LED元件的驅動電路的電路基板。 又，本發明的LED裝置之製造方法中，形成上述LED 結構層的上述階段較佳的情況為，包括藉由遙晶成長而形 成上述LED結構層之至少1層的階段。 又，較佳的情況為，本發明的LED裝置之製造方法 中，上述LED裝置含有多個上述LED元件，且上述 裝置是根據影像信號或者其他顯示控制信號來進行彩色顯 示或黑白顯示的顯示裝置。 乂 、 本發明又提供一種LED裝置，其包括LED結構層、 200836375 基板、以及螢光層，其中，上述LED、结構層包含發光層而 構成LED元件，上述基板透過特定波段的光，上述螢光層 配置在上述LED結構層與上述基板之間，且含有受到來自 上述發光層的光的激發而發出不同波長的光的勞光物質。 又，較佳的情況為，本發明的led裝置中，上述lEd 兀件的數量為兩個或兩個以上，且向上述兩個或兩個以上 • 娜元件中的至少一個LED元件的外部發出的發光色， • 不同於向上述兩個或兩個以上LED元件中的另外至少一 個LED元件的外部發出的發光色。 又，較佳的情況為，本發明的LED裝置中，上述 =件的數量為兩個或兩個以上’且該咖冑置構成根據影 像^號或者其他顯示控制信號來進行彩色顯示或黑 的顯示裝置。 ’、 又’較佳的情況為，本發明的LED裝置包括電路基 板，該電路基板上搭载有驅動上述LED元件的驅動電路， 且該電路基板與上述LED元件電性連接。 [發明的效果] 根墟太發明，短/it ^τ r?T>. ^It is said that the transparent substrate of the LED wafer is polished, or the phosphor material or the like is polished after the formation of the above-mentioned glory material. Further, for example, Patent Document 2 listed below discloses a light-emitting device or a display device (display) as an LED device having an illuminating layer and a fluorescent layer, /center = emitting ultraviolet light Light, the fluorescent layer towel contains a fluorescent substance that is excited by the external light to emit visible light. In the LED device, a structural layer (including a light-emitting layer) is formed on the substrate, and the fluorescent layer is formed on a surface opposite to the LED structure layer of the substrate, or the above-mentioned [ED sister layer] The surface on the opposite side of the substrate. Therefore, the fluorescent layer described in the above-mentioned LED is not covered by the protective film, and is exposed to the outside. [Patent Document 1] Japanese Patent Laid-Open Publication No. 2001-15817 [Patent Document 2] Japanese Patent Special Table However, as described above, in the above-described conventional LED device, since the fluorescent layer is exposed to the outside without being particularly covered by a protective film or the like; the fluorescent layer is externally affected (for example, The moisture is deteriorated, and the durability of the LED device is lowered. 200836375 26216pif _ 'in the manufacture of LED devices, according to the above patent document}, even if the phosphor layer is formed by screen printing or the polishing step is introduced, it is difficult to make the film thickness of the above-mentioned light-preserving substance very precise and both sentence. Therefore, it is impossible to reduce the unevenness of the luminescent color or the illuminating intensity sufficiently between the products (may be a product containing a plurality of LED elements, among the LED elements of the same production 5), and the yield cannot be sufficiently improved. SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and an object thereof is to provide that 1 LED U ' can reduce the influence of external glare layer without covering the cover, and can improve durability. . Further, it is an object of the present invention to provide a method of manufacturing an LED device which can produce a LED device which can improve the above durability and which can make the thickness of the phosphor layer more precise and uniform, thereby further improving the yield. In order to solve the above problems, the present invention provides a method for manufacturing a device, which comprises forming a LED structure layer comprising a light-emitting layer and forming an LED element on a first substrate; A fluorescent layer is formed on the second substrate that has passed through the light of the WaVdength band, and the money layer blanket contains the fluorescent material that is excited by the light from the light-emitting layer and emits light of no wavelength. a third substrate is bonded to the coffee structure layer of the second substrate; the first substrate is removed from the led and the interface layer to which the third substrate is bonded; and the third substrate is bonded and removed The second substrate of the fluorescent layer is bonded to the LED structure layer of the first substrate such that the LED structure layer is in contact with the firefly layer 200836375 26216pif. Moreover, the present invention provides a method of manufacturing an LED device, comprising: forming an LED structure layer including a light-emitting layer and constituting an LED element on a first substrate; and on a second substrate that transmits light of a specific wavelength band, Forming a phosphor layer containing a fluorescent substance that emits light of different wavelengths by excitation of light from the light-emitting layer; and bonding the third substrate to the LED structure layer formed on the f 1 substrate Removing the second substrate from the LED structure layer to which the third substrate is bonded, and bonding the LED structure layer on which the third substrate is bonded and the first substrate is bonded to the second substrate. The phosphor layer; and a bonded body having the second substrate, the phosphor layer formed on the second substrate, and the LED structure layer are divided into portions including one or more LED elements. Further, the preferred method of manufacturing the LED device of the present invention further includes the step of removing the third substrate from the LED structure layer after the step of bonding the LED structure layer to the phosphor layer. When the step of dividing the bonded body is included, a preferred stage of the third substrate from the LED structure layer is after the above-described stage of bonding the LED structure layer and the phosphor layer, and at the stage of the division. prior to. Further, in the method of manufacturing an LED device according to the present invention, the method further includes the steps of: preparing a circuit board on which a driving circuit for driving the LED element is mounted; and performing the LED structure layer and the fluorescent layer After the above-described stage of bonding, the LED structure layer or the substrate is bonded to the circuit substrate. Here, "the LED structure 200836375 26216pif layer or the third substrate is connected to the circuit='=2 circuit base (four), or is electrically connected to the circuit substrate via the (4) 3" layer; In the stage of the bonded body, it is preferred to perform the step of joining the third substrate to the circuit board before the step. In the stage of making a substrate: a stage of the substrate, preferably, after the stage of removing the upper substrate, and in the above-mentioned division = cutting, the bribe will be joined by the LED knot and the loading board. The manufacturing method of the device, the circuit board is good. In this case, it is preferable that the upper hybrid body in which the LED structure layer is bonded to the red circuit substrate is divided into 0 and θ in the above-described splitting section, and more preferably, the circuit substrate as the third substrate is used. A circuit board on which a drive circuit for driving the LED elements described above is mounted. Further, in the method of manufacturing an LED device of the present invention, the step of forming the LED structure layer is preferably a step of forming at least one layer of the LED structure layer by the growth of the crystal. Further, preferably, in the method of manufacturing an LED device according to the present invention, the LED device includes a plurality of the LED elements, and the device is a display device that performs color display or black-and-white display based on a video signal or another display control signal. . The present invention further provides an LED device comprising an LED structure layer, a 200836375 substrate, and a phosphor layer, wherein the LED and the structural layer comprise a light-emitting layer to form an LED element, and the substrate transmits light of a specific wavelength band, and the fluorescent light The layer is disposed between the LED structure layer and the substrate, and includes a working substance that emits light of different wavelengths by excitation of light from the light-emitting layer. Moreover, preferably, in the LED device of the present invention, the number of the above-mentioned 1Ed elements is two or more, and is emitted to the outside of at least one of the two or more of the above-mentioned elements. The luminescent color, • is different from the luminescent color emitted to the outside of the other at least one of the two or more LED elements. Further, preferably, in the LED device of the present invention, the number of the above-mentioned members is two or more's and the curry device is configured to perform color display or black according to an image number or other display control signal. Display device. Preferably, the LED device of the present invention includes a circuit board on which a driving circuit for driving the LED element is mounted, and the circuit board is electrically connected to the LED element. [Effect of the invention] The root market is too invented, short /it ^τ r?T>. ^

且可使螢光層的厚度更加精準且均勻， 良率。 10 200836375 26216pif 【實施方式】 以下，爹照®式來朗本發明的LED裝置及其製造方 [第1實施形態] 圖1是示意性表示作為本發明f工實施形態的1肪壯 置之主要部分的LED晶片1的概略剖面圖。And the thickness of the phosphor layer can be more precise and uniform, and the yield is good. 10 200836375 26216pif [Embodiment] Hereinafter, an LED device and a manufacturer thereof according to the present invention will be described. [First Embodiment] FIG. 1 is a view schematically showing a main example of a permanent embodiment of the present invention. A schematic cross-sectional view of a portion of the LED wafer 1.

以下未㉟貞不在圖式中，本實施形態的LEDThe following is not 35, not in the drawing, the LED of this embodiment

為’使關1所示的LED晶片丨作為LED晶^所 弹型LED燈或者晶片型LED。砲彈型㈣燈或晶片型咖 構造中，除LED晶片1的構造之外，採用眾所周知 故此處省略其說明。 ]稱仏 本實施形態中，如圖i所示，LED晶片由基板（第 2基板）2及LED元件3而構成的，其中，基板2 (第2 基板）是透過特定波段（本實麵態巾，為可見區域）的 光的玻璃基板等基板，LED元件3設置在基板2上，且經 由基板2而向外部發出白色光。該LED晶片1僅呈有一: led元件。該LED晶片J中，將基板2的圖i中的 面侧作為光出射侧。 又 ED几件3是由在基板2之上表面侧從基板2侧依次 知層的螢光層4、η型雜質層5、作為發光層的活性層6及 Ρ型雜質層7:、以及電極8和9而構成的。η型雜質；5、 =層6及ρ型雜質層7分別藉由蟲晶成長層而構 層5的一部分區域並未被活性層6及？型雜質層7 覆盖著’而是該區域上形成有一個電極8。另一個電極9The LED chip shown in the 'OFF 1' is used as an LED-type LED lamp or a wafer-type LED. In the structure of the cannonball type (four) lamp or wafer type, the description of the LED chip 1 is well known, and the description thereof is omitted here. In the present embodiment, as shown in FIG. 1, the LED chip is composed of a substrate (second substrate) 2 and an LED element 3, wherein the substrate 2 (second substrate) is transmitted through a specific wavelength band (the real surface state) The substrate, such as a glass substrate of light in the visible region, is provided on the substrate 2, and white light is emitted to the outside via the substrate 2. The LED chip 1 has only one: a led component. In the LED chip J, the surface side of the substrate 2 in Fig. i is referred to as a light exit side. Further, the ED pieces 3 are the phosphor layer 4, the n-type impurity layer 5, the active layer 6 as the light-emitting layer, and the germanium-type impurity layer 7 as well as the electrode, which are sequentially formed on the upper surface side of the substrate 2 from the substrate 2 side. 8 and 9 are formed. The n-type impurity; the 5, = layer 6 and the p-type impurity layer 7 are each formed by the crystal growth layer, and a part of the region of the layer 5 is not affected by the active layer 6 and ? The type impurity layer 7 is covered with 'an electrode 8 is formed on the region. Another electrode 9

200836375 26216pif 形成於p型雜質層7上。本實施形態中，如所知一般，層 5至層7之各層的材料等被設定為可從活性層6發出藍色 光。再者，如所知一般，實際上層5至層7之各層可視需 要而由多層構成，或者追加緩衝層，其詳細的構造圖示及 說明在此省略。又，本實施形態中，螢光層4是由含有螢 光物質（例如，YAG (釔鋁鎵化合物））且具有透光性的 樹脂（例如，環氧樹脂或者矽氧樹脂）層而構成的，上述200836375 26216pif is formed on the p-type impurity layer 7. In the present embodiment, as is known, the material of each of the layers 5 to 7 is set to emit blue light from the active layer 6. Further, as is known, in actuality, each of the layers 5 to 7 may be composed of a plurality of layers as needed, or a buffer layer may be added, and detailed structural drawings and explanations thereof will be omitted. Further, in the present embodiment, the phosphor layer 4 is composed of a layer of a light-transmitting resin (for example, an epoxy resin or a silicone resin) containing a fluorescent substance (for example, YAG (yttrium aluminum gallium compound)). , the above

螢光物質文到來自活性層6的藍色光的激發而發出與藍色 具有互補關係的黃綠色的光。 由以上說明可知，本實施形態中，n型雜質層5、活性 層6、p型雜質層7及電極8和9之全體，成為構成哪 兀件3的LED結構層（其中，螢光層4除外）i()，榮光層 4配置在LED結構層1〇與基板2之間。 〜w慨籾啕順％流時，從活性層6發 藍色光，而且從活性層6發出並直接以藍色光透過榮光 4的光、與因螢光層4的料物質而轉變為黃綠色光的 相混合’由此使基板2的下表面側的觀察者可看見白色另 本實施形態的LED裝置中；如圖1所示，於LED 片1中，由於螢光層4被失在LK)結構層ι〇與基板2 間，故螢光層4即便未由特別的保護膜等覆蓋著，亦不 露出到外^因此’根據本實施縣，可在沒有特別的 護膜等覆盍的纽下降低外部對f光層 提高耐久性。 …叩且 其次，參照圖2A〜2C、圖 3A〜3B及圖4A〜4B來說 200836375 26216pif 明本實施形態的LED裝置之製造方法之—例。圖2A〜 =、圖3A〜3B及圖4A〜4B是分別示意性表示本實施形 恶的LED裝置之製造方法的各步驟的概略剖面圖。 首先，準備基板（第1基板）11，該基板（第】基板） 11成為使LED結構層1(mn型雜質層5以晶成長的基 礎。作為基板11，使用例如藍寶石基板或者s丨c基板等。 隨後’於第1基板11上’形成多個包含發光層（活性層） 且構成LED元件的LED結構層10。亦即，於基板丨丨上 形成LED結構層10,其數量相當於應—併製造的土多個⑽ 晶片1的數量。具體而言，於基板η上，藉由蟲晶成長而 依次形成η型雜質層5、活性層6及ρ型雜質層7，且藉由 姓刻而去除活性層6及ρ型雜質層7的無需區域。此時，η 型錶貝層5直接形成於基板η的整個面上。其後，以金等 形成電極8、9,並且經蝕刻而圖案化為特定形狀。圖、2Α 表示該狀態。 其次，將用以保持LED結構層10且保護LED結構層 1〇免受機械損傷的基板（第3基板）12，接合在與基板u 相反侧的LED結構層10的表面。該接合是暫時的，隨後 將會剝#。此處，利用熱可塑性躐（wax) 將基板Η 接合於LED結構層10上。圖2B表示該狀態。 其後，從接合有基板12的LED結構層10上去除基板 11。圖2C表不該狀態。該基板u之去除可藉由下述方式 而進行，例如，以研磨機（grinder)削除基板n，或者以 貪水枝（咼壓水喷射）或鋼絲銘（wire saw)將LED結構 13The fluorescent substance is excited by the blue light from the active layer 6 to emit yellow-green light having a complementary relationship with blue. As is apparent from the above description, in the present embodiment, the entire n-type impurity layer 5, the active layer 6, the p-type impurity layer 7, and the electrodes 8 and 9 constitute an LED structure layer (which is the fluorescent layer 4). Except for i(), the glory layer 4 is disposed between the LED structure layer 1A and the substrate 2. When the flow is reduced, the blue light is emitted from the active layer 6, and the light emitted from the active layer 6 and directly transmitted through the glory 4 with blue light and the yellow-green light due to the material of the fluorescent layer 4 The phase mixture 'is thus made the observer of the lower surface side of the substrate 2 visible in the white LED device of the present embodiment; as shown in FIG. 1, in the LED chip 1, since the phosphor layer 4 is lost in LK) Since the structure layer is between the substrate and the substrate 2, the phosphor layer 4 is not exposed to the outside even if it is not covered with a special protective film or the like. Therefore, according to the implementation of the present invention, there is no special film or the like. Lowering the external to the f-light layer improves durability. Next, referring to Figs. 2A to 2C, Figs. 3A to 3B, and Figs. 4A to 4B, 200836375 26216pif is an example of a method of manufacturing an LED device according to the embodiment. Figs. 2A to 2, Figs. 3A to 3B, and Figs. 4A to 4B are schematic cross-sectional views each schematically showing respective steps of a method of manufacturing an LED device of the present embodiment. First, a substrate (first substrate) 11 is prepared, and the substrate (first substrate) 11 is used to form the LED structure layer 1 (the mn-type impurity layer 5 is crystal grown. For the substrate 11, for example, a sapphire substrate or a s丨c substrate is used. Then, a plurality of LED structure layers 10 including the light-emitting layer (active layer) and constituting the LED element are formed on the first substrate 11. That is, the LED structure layer 10 is formed on the substrate raft, the number of which corresponds to - the number of the plurality of (10) wafers 1 to be manufactured. Specifically, on the substrate η, the n-type impurity layer 5, the active layer 6 and the p-type impurity layer 7 are sequentially formed by the growth of the crystallites, and by the surname The unnecessary regions of the active layer 6 and the p-type impurity layer 7 are removed. At this time, the n-type surface layer 5 is formed directly on the entire surface of the substrate η. Thereafter, the electrodes 8, 9 are formed with gold or the like, and are etched. The pattern is patterned into a specific shape. The figure 2 Α indicates this state. Next, the substrate (the third substrate) 12 for holding the LED structure layer 10 and protecting the LED structure layer 1 from mechanical damage is bonded to the substrate u. The surface of the side LED structure layer 10. The joint is temporary and will subsequently Stripping. Here, the substrate is bonded to the LED structure layer 10 by a thermoplastic wax. This state is shown in Fig. 2B. Thereafter, the substrate 11 is removed from the LED structure layer 10 to which the substrate 12 is bonded. This state is not shown. The removal of the substrate u can be performed by, for example, cutting the substrate n with a grinder or by using a water-spraying or wire saw. Structure 13

200836375 26216pif 層10與基板11的邊界附近切斷。200836375 26216pif The layer 10 is cut off near the boundary of the substrate 11.

另方面，準備透過特定波段（本實施形態中，為可 見區域）的光的玻璃基板等基板（第2基板）2，並在基板 ^上塗佈上述螢光層4。圖3A表示該狀態。由於基板2的 表面上沒有經圖案化後之層等所產生的凹凸，且基板：可 使用未經伴衫晶成長層形成等高溫處理之步驟的基板， 故於基板2上不存在高溫處理等所導致的彎曲等現象。因 此’^螢光層4的厚度更加精確且羽。為了使勞光層 ^度更進—步變得精確且均勻，亦可視需要，在塗佈 螢光層4之前研磨基板2以使其平坦化 在 層，後研磨榮光層4以使其平坦化。再者， 可藉由例如絲網印刷而形成。On the other hand, a substrate (second substrate) 2 such as a glass substrate that transmits light of a specific wavelength band (in the present embodiment, a visible region) is prepared, and the phosphor layer 4 is applied onto the substrate ^. Fig. 3A shows this state. Since the surface of the substrate 2 has no irregularities generated by the patterned layer or the like, and the substrate: a substrate which is not subjected to a high temperature treatment step such as formation of a crystal growth layer can be used, there is no high temperature treatment on the substrate 2 The resulting bending and other phenomena. Therefore, the thickness of the phosphor layer 4 is more precise and feathered. In order to make the work layer more precise and uniform, it is also possible to polish the substrate 2 to planarize the layer before coating the phosphor layer 4, and then polish the glory layer 4 to planarize it. . Furthermore, it can be formed by, for example, screen printing.

f著，將圖2C所示之狀態的LED結構層10的下表 =與基板12相反侧的面）、與圖3A所示之狀態的勞光 “一上表面（與基板2相反侧的面）進行接合。圖3Bf, the lower surface of the LED structure layer 10 in the state shown in FIG. 2C = the surface opposite to the substrate 12), and the surface of the light shown in FIG. 3A "one upper surface (the surface opposite to the substrate 2) ) Engage. Figure 3B

Si狀?。本實施形態中，由於螢光層4是使用環氧樹 一5石夕氧樹脂等具有黏接性的樹脂而構成的，故利用螢 =層4黏接性將LED結構層1〇與螢光層*加以接合。當 “亦可使用與螢光層4不同的具有透光性的黏接劑將 LED結構層10與螢光層4加以接合。 將led結構層的下表面與螢光層4接合後，去除 ”、、2^ 13，稭此從LED結構層1〇上剝離並去除基板 12。圖4A表示該狀態。 其次，對具備圖4A所示之狀態的LED結構層1〇的 14 200836375 26216pifSi-like?. In the present embodiment, since the phosphor layer 4 is formed of an adhesive resin such as epoxy resin or 5 stone oxide resin, the LED structure layer 1 and the fluorescent layer are bonded by the firefly layer 4 adhesion. Layer* is joined. When the LED structure layer 10 and the phosphor layer 4 are bonded together by using a light-transmitting adhesive different from the phosphor layer 4, the lower surface of the LED structure layer is bonded to the phosphor layer 4, and then removed. , 2^ 13, straw is peeled off from the LED structure layer 1 and the substrate 12 is removed. This state is shown in Fig. 4A. Next, for the LED structure layer 1 having the state shown in Fig. 4A, 14 200836375 26216pif

ί 割(dlClng) ’以分割成各個LED晶片1。圖4B 表不多個咖晶片1藉由以上步驟而-併完成 圖後’㈣線接合（wirebGnding)等眾所周知的步驟 咖‘者本實施形態之_裝置的_型 上所：該f造方法製造出本實施形態的LED裝置後，可如 以:繼層4的厚度更加财且均勾。因此，可i ! 先色均勾（本實施形態中，為均勻的白色色产） 的LED裝置，且可進„步提高良率。 巴色度） A = =方法中’―併製造的所有LED晶片1的0士構 f ::為兔光層的活性層6發出藍色光， ：將 發光而發出黃綠色的光，且所有二 此不同色光的螢光層（亦即，於圖3A所示之步^ 應於彼此不同發光色的LED晶片1的區域中，配 ^出彼此不同色光的螢光層）作為螢光層4，並且一次 衣造發出彼此不同色光的多個lED晶片i。 發先二晶片結構亦可為’作為 七出系外先，亚且螢光層4將上述紫外 光作為激發光而發出特定色的光（例如，紅色光、綠色光 或者藍色光）。 从、進一步，一併製造的所有LED晶片！的結構亦可為， 乍為發光層的活性層6發出紫外光，並且於各個LED晶片. 1中’配置由紫外光激發而發出彼此不同色光的螢光層（亦 15 200836375 26216pif 即，於圖3A所示之步驟中，在對應於彼此不同發光色的 LED晶片1的區域中，配置發出彼此不同色光的螢光層） 作為螢光層4,且一次性製造發出彼此不同色光的多個 LED晶片1。 進一步，LED晶片1的結構亦可為，作為發光層的活 性層6發出紫外光，並且於一個LED晶片1中的將上述榮 光層4分成3份的三個區域部分上，分別配置有由紫外光 激發而發出紅色光、綠色光及藍色光的三個螢光層。藉此， 亦玎從LED晶片1發出白色光。 [第2實施形態] 圖5是表示本發明第2實施形態的LED裝置21的概 略方塊圖。 本貫施形恶的LED裝置21構成發光顯示對應於影像 信號的彩色畫像的顯示裝置。本實施形態的LED裝置21 亦4構成為例如晝面尺寸小於等於1英忖的所謂微顯示 器。如圖5所示，本實施形態的LED裝置21包括以下部 分：以二維狀配置的多個單位像素30、以列為單位而選擇 單位像素3〇的各色LED元件41R和41G和41B (圖5中 未圖系’參如、下述圖6及圖7 )的垂直掃描電路％、以行 為單位而選擇單位像素30的各色LED元件41R和41G和 41B的水平掃描電路33、以及控制垂直掃描電路32及水 平掃描電路33的影像信號處理電路34，以使對從外部輸 入的影像信號經處理後進行對應於該影像信號的晝像顯 示。圖5中’單位像素30的數量為3x3個，但並非限定 16 200836375 26216pif 於此。 本實施形態中，藉由單位像素3〇中的除LED元件 41R、41G、41B以外的要素（參照下述圖6)、垂直掃描 電路32、水平掃描電路33及影像信號處理電路34，而構 成驅動LED元件41R、41G、41B的驅動電路31。 圖6是表示圖5中的單位像素3〇的電路圖。各單位像 素30具有：發出紅色光的紅色LED元件41r、發出綠色 光的綠色LED元件41G、發出藍色光的藍色LED元件 41B、選擇紅色LED元件41R之像素行的紅色行選擇開關 42R、選擇綠色LED元件41(3之像素行的綠色行選擇開關 42G '以及選擇藍色LED元件41β之像素行的藍色行選擇 開關42B。行選擇開關42R、42G、42B藉由MOS電晶體 而構成。 ^所有單位像素30的LED元件41R、41G、41B的陰極 藉=接地線43而共通連接著。LED元件41R、41G、4m 的陽極分別連接於對應的選擇開關42R、42G、42B的汲 極、、、工色行述擇開關42R的源極藉由水平源極線而共 通連接於每個像素列，並從在影像信號處理電路料的控制 、、而作動，垂直掃描電路32上，接受大小與紅色亮度值相 對4的電壓作為驅動信號。綠色行選擇開關:的源極藉 平源極線44<3而共通連接於每個像素列，並從垂直掃 ^路1上接受大小與綠色亮度值相職的電壓作為驅 5旒。藍色行選擇開關42B的源極藉由水平源極線44b 而一通連接於每個像素列，並從垂直掃描電路32上接受大 17 200836375 26216pif 小與監色壳度值相對應的電壓作為驅動信號。 紅色行選擇開關42R的_藉由垂直選擇線做而放 通連接於每個像素行，並從在影像信號處理電路^的控制 I，作動的水平掃描電路33上接受紅色行選擇信號。綠色 二丁遠擇開關42G的_藉㈣直選擇線45(}而共通連接於 =個像素行，域水平掃描電路33 ±接受綠色行選擇信 ，。，色订捕開關42B的開極藉由垂直選擇線45B而政 =接於每騎，並從水糊“路33上接受藍色行選擇 。卢卢tit圖Λ，當從外部輸入有影像信號後，影像信 號處里電路34根據該影像信號而求出各像素％的各 度亥值的控制信號分別輸出至垂直掃描電路 33 °垂直掃描電路32及水平掃描電路 33疋在特疋的時序根據上述控制信號，於特定的時序對每 個像素行輸出各色的行選擇開關42r、42g、42b的接通 ^ (ί擇信號）’且對每個像翻，料色的水平源極線 、44G—、44Β輸出大小與亮度值相對應的電壓。以此方 ^針對每個單位像素3〇，將大小與亮度值相對應的電壓 —(且電流）施加至各色LED元件仙、仙、4ιβ，以使 每，單位像素3G發出以所f的色、亮度而發光，藉此，使 知表不所f入的影像信號的畫像發光顯示。 圖7疋不思性表不本實施形態中採用的各色LED元件 41R、41G、41B之配置的平面圖。圖7中，「R」表示紅色 LED兀件他，「G」表示綠色LED元件41G，「B」表示 18ί cut (dlClng)' to divide into individual LED wafers 1. 4B shows a plurality of coffee wafers 1 by the above steps - and completes the well-known steps of the "fourth wire bonding" (wirebGnding), etc. After the LED device of the present embodiment is used, it is possible to make the thickness of the layer 4 more profitable and uniform. Therefore, it is possible to use an LED device with a first color (in this embodiment, a uniform white color), and it is possible to increase the yield. Pak color) A = = in the method '- and all manufactured The LED wafer 1 has a blue light for the active layer 6 of the rabbit light layer, a yellow-green light that emits light, and all of the phosphor layers of different colors (i.e., as shown in Fig. 3A). In the case of the LED chips 1 of different luminescent colors, the phosphor layers of different colors of light are arranged as the phosphor layer 4, and a plurality of lED wafers i emitting light of different colors from each other are produced at a time. The first two-wafer structure may also be 'before the seven-outlet system, and the phosphor layer 4 emits the above-mentioned ultraviolet light as the excitation light to emit a specific color of light (for example, red light, green light or blue light). Further, all of the LED chips manufactured together may have a structure in which the active layer 6 of the light-emitting layer emits ultraviolet light, and in each of the LED chips, 1 'configures ultraviolet light excited by ultraviolet light to emit different colors of light from each other. Layer (also 15 200836375 26216pif ie, the step shown in Figure 3A In the region corresponding to the LED chips 1 of different luminescent colors from each other, a phosphor layer emitting light of different colors from each other is disposed as the fluorescent layer 4, and a plurality of LED wafers 1 emitting light of different colors from each other are manufactured at one time. Further, The LED wafer 1 may be configured such that the active layer 6 as the light-emitting layer emits ultraviolet light, and is disposed on three regions of the LED wafer 1 in which the glory layer 4 is divided into three portions, respectively, and is respectively excited by ultraviolet light. In the second embodiment, the LED device 21 of the second embodiment of the present invention is shown in the present invention. The second embodiment of the present invention is the same as the three-layered phosphor layer of the red light, the green light, and the blue light. The LED device 21 of the present embodiment constitutes a display device that illuminates and displays a color image corresponding to a video signal. The LED device 21 of the present embodiment is also configured to have a face size of, for example, 1 inch or less. As shown in Fig. 5, the LED device 21 of the present embodiment includes a plurality of unit pixels 30 arranged in two dimensions, and LED elements 41R and 4 of respective colors for selecting unit pixels 3 in units of columns. The vertical scanning circuit % of 1G and 41B (not shown in FIG. 5, see FIG. 6 and FIG. 7 below), and the horizontal scanning circuit 33 for selecting the color LED elements 41R and 41G and 41B of the unit pixels 30 in units of rows. And controlling the image signal processing circuit 34 of the vertical scanning circuit 32 and the horizontal scanning circuit 33 to process the image signal corresponding to the image signal after processing the image signal input from the outside. The unit pixel 30 of FIG. In the present embodiment, elements other than the LED elements 41R, 41G, and 41B (see FIG. 6 below) and the vertical scanning circuit 32 are included in the unit pixel 3A. The horizontal scanning circuit 33 and the video signal processing circuit 34 constitute a drive circuit 31 that drives the LED elements 41R, 41G, and 41B. Fig. 6 is a circuit diagram showing a unit pixel 3A in Fig. 5; Each unit pixel 30 has a red LED element 41r that emits red light, a green LED element 41G that emits green light, a blue LED element 41B that emits blue light, a red row selection switch 42R that selects a pixel row of the red LED element 41R, and a selection. The green LED element 41 (the green row selection switch 42G' of the pixel row of 3 and the blue row selection switch 42B of the pixel row of the blue LED element 41β are selected. The row selection switches 42R, 42G, 42B are constituted by MOS transistors. ^ The cathodes of the LED elements 41R, 41G, and 41B of all the unit pixels 30 are connected in common by the ground line 43. The anodes of the LED elements 41R, 41G, and 4m are respectively connected to the drains of the corresponding selection switches 42R, 42G, and 42B, The source of the color selection switch 42R is commonly connected to each pixel column by a horizontal source line, and is operated by the control of the image signal processing circuit material, and the vertical scanning circuit 32 accepts the size. The voltage corresponding to the red luminance value is used as the driving signal. The source of the green row selection switch: is commonly connected to each pixel column by the flat source line 44<3, and receives the size and green light from the vertical scanning path 1. The voltage of the duty value is used as the drive 5. The source of the blue row select switch 42B is connected to each pixel column by the horizontal source line 44b, and receives a large 17 from the vertical scan circuit 32. 200836375 26216pif The voltage corresponding to the color-receiving shell value is used as the driving signal. The red row selection switch 42R is turned on and connected to each pixel row by the vertical selection line, and is activated from the control I of the image signal processing circuit ^ The red line selection signal is received on the horizontal scanning circuit 33. The _ borrowing (four) straight selection line 45 (} of the green dibutyl remote selection switch 42G is commonly connected to = pixel line, and the horizontal scanning circuit 33 ± accepts the green line selection signal. The opening of the color-setting switch 42B is connected to each ride by the vertical selection line 45B, and accepts the blue line selection from the water paste "lupe 33. Lulu tit map" when an image signal is input from the outside. Then, the video signal circuit 34 obtains a control signal for each pixel % of each pixel % based on the video signal, and outputs the control signal to the vertical scanning circuit 33° vertical scanning circuit 32 and horizontal scanning circuit 33, respectively. Above control The signal outputs the turn-on (selection signal) of the row selection switches 42r, 42g, 42b of each color for each pixel row at a specific timing and the horizontal source line of the color of each color, 44G-, 44Β output voltage corresponding to the brightness value. In this way, for each unit pixel 3〇, a voltage corresponding to the brightness value (and current) is applied to each color LED element 仙,仙, 4ιβ, so that Each of the unit pixels 3G emits light in accordance with the color and brightness of f, whereby the image of the video signal that is not displayed is illuminated. Fig. 7 is a plan view showing the arrangement of the LED elements 41R, 41G, and 41B of the respective colors used in the present embodiment. In Fig. 7, "R" indicates a red LED component, "G" indicates a green LED component 41G, and "B" indicates 18

200836375 26216pif 藍色LED元件彻。圖7中，單位像素3〇的數量亦為如 個。上述各方面與下述圖8及圖9相同。 如圖7所示，本實施形態中，各單位像素％是由在列 方向（左右方向）上排列的各色逐個合計為三侧哪元 件41R、41G、41B所構成。本實施形態中，如圖7所示， 相同列的各單位像素30中的各色LED元件41R、41〇、 41B的排列順序，但行方向上相鄰列的單位像素30 中的^ED元件41R、41G、41B的排列順序不同。 —，然，各色LED元件41R、41G、41B的配置並非限 疋於圖2所示的圖例，例如，亦可採用圖8所示的配置或 圖9所示的配置。圖8中，所有單位像素3〇中的各色led 元件41R、41G、41B的排列順序相同。圖9中，各單位 像素30是由一個紅色LED元件41R、兩個綠色LED元件 41G、及一個藍色LED元件41B之合計2x2個lED元 所構成的。 圖10是表示本實施形態的LED裝置21的概略剖面 圖。圖U是放大表示圖10中的混合（hybrid)晶片51的 概略放大剖面圖。圖是示意性表示構成圖10及圖11 所不之晶片51的LED基板52的一個單位像素30的—部 刀（僅11亥一部分要素）的概略平面圖。圖13是示意性表示 構成圖10及圖11所示之晶片51的驅動電路基板53的與 圖12對應之一個單位像素3〇的一部分（僅該一部分要素） 的概略平面圖。再者，圖12及圖13均為自圖11中的上侧 所觀察到的情況，本來應為隱線的線亦以實線而表示。再 19 200836375 i〇pif 者’ /口著圖7中的Α-Α線的剖面、沿著圖12中的Β_Β，線 的剖面、及沿著圖13中的c_c，線的剖面包含於一個平面 内，圖1〇及圖11所示之剖面表示上述平面中的剖面。 LED基板52是由透過特定波段（本實施形態中，為 可見區域）的光的1塊_基板等基板（第2基板）6卜 及設置於«板61上的财單位像㈣的各色led元件 41R、41G、41B而構成的。200836375 26216pif Blue LED components are thorough. In Fig. 7, the number of unit pixels 3〇 is also such as one. Each of the above aspects is the same as that of Figs. 8 and 9 described below. As shown in Fig. 7, in the present embodiment, each unit pixel % is composed of three elements on the three sides, 41R, 41G, and 41B, which are collectively arranged in the column direction (left-right direction). In the present embodiment, as shown in FIG. 7, the arrangement of the LED elements 41R, 41A, and 41B of the respective color units 30 in the same row is the same as the ^ED element 41R in the unit pixel 30 in the adjacent row in the row direction. The order of 41G and 41B is different. The configuration of the respective color LED elements 41R, 41G, and 41B is not limited to the illustrated example shown in Fig. 2. For example, the configuration shown in Fig. 8 or the configuration shown in Fig. 9 may be employed. In Fig. 8, the arrangement order of the color LED elements 41R, 41G, and 41B in all the unit pixels 3A is the same. In Fig. 9, each unit pixel 30 is composed of a total of 2 x 2 lED elements of one red LED element 41R, two green LED elements 41G, and one blue LED element 41B. Fig. 10 is a schematic cross-sectional view showing the LED device 21 of the embodiment. Fig. U is a schematic enlarged cross-sectional view showing the hybrid wafer 51 of Fig. 10 in an enlarged manner. The figure is a schematic plan view schematically showing a unit knife (only a part of the elements) of one unit pixel 30 constituting the LED substrate 52 of the wafer 51 shown in Figs. 10 and 11 . Fig. 13 is a schematic plan view showing a part (only a part of the elements) of one unit pixel 3A corresponding to Fig. 12 constituting the drive circuit board 53 of the wafer 51 shown in Figs. 10 and 11 . Further, Fig. 12 and Fig. 13 are all observed from the upper side in Fig. 11, and the line which should be a hidden line is also indicated by a solid line. Further, the section of the Α-Α line in Fig. 7, the Β_Β in Fig. 12, the section of the line, and the c_c in Fig. 13 are included in a plane. Here, the cross section shown in Figs. 1A and 11 shows a cross section in the above plane. The LED substrate 52 is a substrate (second substrate) 6 such as a substrate that transmits light of a specific wavelength band (in the present embodiment, a visible region), and a color LED element of a financial unit image (four) provided on the «plate 61. 41R, 41G, 41B.

如圖u及圖12所示’紅色LED元件41R是由在基 板61之下表面側從基板61侧依次積層的榮光層62R、r 型雜質層63、作為發光層的活性層64及^型雜質層65、 以及電極66 # 67而構成的。n型雜質層63、活性層64、 質層65分別藉由蟲晶成長層而構成。心雜質層 —3的一曰部分區域並未由活性層64及p型雜質層沾覆蓋 =而疋該區域上形成有_個電極66。另—個電極67形 成於P型雜質層65上。本實施形態中，眾所皆知地，層 6外之各^的材料等被設定為可從活性層64發出紫 外先。再者，貫際上如眾所皆知地，層6 個層構成’或者追加緩衝層，^ 省略。螢光層62R是由含有榮光物質(例 0.950 12Si4〇0 075N7 917 · Eu0.〇50 或 γ2〇 光(例如’環氧樹脂或者錢樹:旨)層而 構成的’上迷备光物質受到來自該LED元 活性 層64的紫外光的激發而發出紅色光。 r 綠色LED 70件41G不同於紅色咖4 41R之處僅 20As shown in FIG. 12 and FIG. 12, the red LED element 41R is a glory layer 62R, an r-type impurity layer 63 which is laminated in this order from the substrate 61 side on the lower surface side of the substrate 61, an active layer 64 as a light-emitting layer, and a type impurity. Layer 65 and electrode 66 #67 are formed. The n-type impurity layer 63, the active layer 64, and the layer 65 are each formed by a crystal growth layer. A portion of the core impurity layer-3 is not covered by the active layer 64 and the p-type impurity layer = and an electrode 66 is formed on the region. Another electrode 67 is formed on the P-type impurity layer 65. In the present embodiment, it is known that the material or the like outside the layer 6 is set to emit ultraviolet light from the active layer 64. Furthermore, as is well known in the art, the layer 6 layers constitute 'or an additional buffer layer, ^ is omitted. The phosphor layer 62R is composed of a luminescent material (for example, 0.950 12Si4 〇 0 075N7 917 · Eu0. 〇 50 or γ 2 ( (for example, 'epoxy resin or money tree: y) layer) The ultraviolet light of the LED element active layer 64 is excited to emit red light. r Green LED 70 pieces 41G is different from red coffee 4 41R only 20

200836375. x vy|>ll 在於，取代螢光層62R而形成螢光層62G，藍色LED元 件41B不同於紅色LED元件41R之處僅在於，取代榮光 層62R而形成螢光層62B，因而此處省略該些的重複說明。 螢光層62G是由含有螢光物質（例如，ZnS : Cu、A1 或(Ba、Sr、Ca)2Si〇4 : 等）且具有透光性的樹脂（例如， 環氧樹脂或者矽氧樹脂）層所構成，上述螢光物質受到來 自上述LED元件41G之活性層64的紫外光的激發而發出 綠色光。 金光層62B是由含有螢光物質（例如，bam :200836375. x vy|>ll, in which the phosphor layer 62G is formed instead of the phosphor layer 62R, and the blue LED element 41B is different from the red LED element 41R only in that the phosphor layer 62B is formed instead of the glory layer 62R. The repeated description of these is omitted here. The phosphor layer 62G is a resin (for example, an epoxy resin or a silicone resin) containing a fluorescent substance (for example, ZnS: Cu, A1 or (Ba, Sr, Ca) 2Si〇4 : or the like) and having light transmissivity. In the layer configuration, the fluorescent material is excited by ultraviolet light from the active layer 64 of the LED element 41G to emit green light. The gold layer 62B is composed of a fluorescent substance (for example, bam:

Eu(BaMgAl10O17 ·· Eu 或(Sr、Ca、Ba、JVIG)10(P〇4)6CL2 :Eu(BaMgAl10O17 ·· Eu or (Sr, Ca, Ba, JVIG) 10(P〇4)6CL2 :

Eu等）且具有透光性的樹脂（例如，環氧樹脂或者矽氧樹 脂）層而構成的，上述螢光物質受到來自上述LED元件 41B之活性層64的紫外光的激發而發出藍色光。 由以上說明可知，本實施形態中，對於各LED元件 41R ' 41G、41B而言，n型雜質層63、活性層64、p型雜 質層65及電極66和67之全體，成為構成該Lm)元件的 LED結構層70 (其中，螢光層62R、62G、62B除外），螢 光層62R、62G、62B分別配置在LED結構層70與基板 61之間。 圖5及圖6所示之電路中，作為LED元件41R、41G、 41B以外之部分的驅動電路3ι是使用眾所皆知的半導體 製程技術而搭載於一個驅動電路基板53上的。本實施形態 中’採用矽基板作為驅動電路基板53。如圖11、圖12及 圖13所示，驅動電路基板53藉由凸塊㈧碰p) 71、72 21Eu (e.g.) is a layer of a translucent resin (e.g., an epoxy resin or a neodymium resin), and the phosphor is excited by ultraviolet light from the active layer 64 of the LED element 41B to emit blue light. As is apparent from the above description, in the present embodiment, the entire n-type impurity layer 63, the active layer 64, the p-type impurity layer 65, and the electrodes 66 and 67 are formed in the respective LED elements 41R' to 41G and 41B. The LED structure layer 70 of the element (excluding the phosphor layers 62R, 62G, and 62B), and the phosphor layers 62R, 62G, and 62B are disposed between the LED structure layer 70 and the substrate 61, respectively. In the circuits shown in Fig. 5 and Fig. 6, the drive circuits 31 other than the LED elements 41R, 41G, and 41B are mounted on one drive circuit board 53 by using a well-known semiconductor process technology. In the present embodiment, a ruthenium substrate is used as the drive circuit substrate 53. As shown in FIG. 11, FIG. 12 and FIG. 13, the drive circuit substrate 53 is touched by bumps (8) p) 71, 72 21

200836375 zoziopif 而與LED基板52的各LED元件41R、41G、41B之電極 66、67電性連接著。晶片51 ϋ由以凸塊7卜72彼此接人 的LED基板52及驅動電路基板53所構成。 上述紅色行選擇開關42r構成為M〇s電晶體， MOS電晶體是由形成於驅動電路53 ^ 層之源極與錄（未及配置於該兩相之200836375 zoziopif is electrically connected to the electrodes 66 and 67 of the LED elements 41R, 41G, and 41B of the LED substrate 52. The wafer 51 is composed of an LED substrate 52 and a drive circuit substrate 53 which are connected to each other by bumps 72. The red row select switch 42r is configured as an M〇s transistor, and the MOS transistor is formed by the source and the trace formed on the driver circuit 53 (not disposed in the two phases)

f閘極電極73 (圖13參照）所組成的。上述源極連接於 口水平源極線44R #目連接的配線圖案。上述沒極與藉由 =其上的凸塊72而連接的電極74相連接。閘極電極乃 猎由配線圖案喊接㈣直選擇線视。以上各方 綠色仃選擇開關伽及藍色行選擇關伽亦相同 者’接地線43兼作用以與LED元件41R、4m、4ib相 接的電極。而且’於圖n中，75為㈣化膜等絕緣膜。 如圖11所示，紅色LED元件41R的陽極與紅 擇開關42R的汲極藉由設於電極67、74之 7品 著。又™元件41R的陰極= 也= 精由δ又於電極66和接地線43之間的凸塊71而電性連接 著。同樣地，LED元件41G、的陽極與選擇開關伽、 42B的汲極藉由各凸塊72而分別電性連接著，且LED 一 件41G、42B的陰極與接地線43藉由各凸塊71而分別= 性連接著。凸塊71、72是由例如銅或金等而構成的。 各色LED元件41R中，若於電極66、67之間流過 則會從活性層64發出紫外光。紅色LED元件41R中， 螢光層62R受到來自活性層64的紫外光的激發而發出紅 22 200836375 26216pif 色光，該紅色光經由基板61而向上方射出。綠色led元 件41G中，螢光層62G受到來自活性層64的紫外光的$ 發而發出綠色光，該綠色光經由基板61而向上方射出。= 色LED元件41G中，螢光層62B受到來自活性層64的= 外光的激發而發出藍色光，該藍色光經由基板61而向上方 射出。 圖11所示’本實施形態中，在基板61上的相鄰led 7L件間的位置上形成杨61a ’該槽61a形成為與基板 的表面大致垂直。 從 LED 兀件 41R、41G、41B 的螢光層 62R、62G、 $發出的光不僅向上方而且欲向各種方向行進。因此，若 ^有槽6U，則從各咖元件的榮光層發出的光會與從鄰 的LED το件的螢光層發出的光混合而產生干擾。相對於 =由於基板61上形成有槽61a，所以光會於槽6u的面 μ 士 i全反射，故—個LED元件的螢光層所發出的光的輻 2向經隸程度的彙集後確定方向性。因此，可抑制鱼 =的螢光層所發出的光混合而產生的干擾，從而可進行 =比度的顯不。當然，本發明中，未必需要形成槽…。 空的，即使槽61&内埋入有金屬等 ^射材枓或者對槽61a的面進行蒸鑛等而形成，亦 传同樣的干擾抑制效果。 1G’本實施形態的LED裝置中，晶片51 二:#土板54上’晶片51的驅動電路基板53的特定 电極兵支持基板54上的電極55之間藉由導線％而線接合 23 200836375 262I6pif 著’且導線56的部分藉由樹脂57所密封。 通常’具有LED元件的晶片包含與圖10中的基板61 相當的透明基板，且全體由樹脂所密封著。其原因在於， 通常的晶片若不以此方式形成，則會引起耐久性惡化，或 者由於LED發光層的折射率高而導致光取出效率降低。 然而’本實施形態的LED裝置中，LED基板52與驅 動電路基板53因凸塊71、72而併合（hybrid)。又，如圖 11所示，本實施形態的LED裝置中，各lEd元件41R、 41G 41B的螢光層62R、62G、62B分別被夾持在led 結構層70與基板61之間，故螢光層62R、62G、62B即 便未由4寸別的保護膜等覆盍著，亦不會露出到外部。因此， 根據本貫施形態，可在沒有特別的保護膜等覆蓋的情況下 降低外部對螢光層62R、62G、62B的影響，而且可提高 耐久性。又，將基板61的折射率設為介於空氣的折射^ LED發光層的折射率之中間程度的折射率，藉此可抑制光 取出效率的降低。因此，本實施形態中’不必對整個晶 51進行樹脂密封。但是，由於導線56部分的機：性;;， 故本實施形態中，僅導線56的部分是由樹脂”密 當然，本發明巾，例如亦可將晶片51以目^所干。 刀A队谷π玎农、ci内。該封裝幻藉 裝本體8la及顯示窗的密封蓋8lb而構成為所謂球 (ball grid package)。設於封裝本體8la之底面]寸衣 球（solder ball) 82經由未圖示的路徑而與·以導線^、干， 於驅動電路基板53之電極上的各電極84電性連接著接5 24 200836375 zoz i opif 其次，參照圖15A〜15C、圖16A〜16C、圖17A〜17B 及圖18來說明本實施形態的LED裝置之製造方法之一 例。圖15A〜15C、圖16A〜16C、圖17A〜17B及圖19 是分別示意性表示該製造方法的各步驟的概略剖面圖。圖 18是示意性表示該製造方法的特定步驟的概略立體圖。 首先，準備基板（第1基板）91，該基板（第1基板） 91成為使LED結構層70的η型雜質層63等磊晶成長的 基礎。作為基板91，使用例如藍寶石基板或者siC基板等。 隨後，於基板91上形成LED結構層70，其數量相當於應 一併製造的多個晶片51的LED元件41R、41G、41B的數 里亦即，於基板91上，藉由蟲晶成長而依次形成n型雜 質層63、活性層64、及Ρ型雜質層65,且藉由蝕刻而去 除活性層64及ρ型雜質層65的無需區域。此時，η型雜 質層63直接形成於基板91上的整個面上。其後，以金等 形成電極66、67,並且經蝕刻而圖案化為特定形狀。圖15Α 表示該狀態。 其-人，將用以保持LED結構層70且保護LED結構層 7〇免受麵損傷的基板（第3基板）92，接合在與基板^ 相反侧的LED賴層7〇的表面。該接合是暫時的，隨後 將會剝離。此處，利用熱可塑性蠟93將基板丨2接合於LED 結構層ίο上。隨後，從接合有基板92的led ^構層7〇 上去除基板91。圖15B表示該狀態。 另一方面，準備透過特定波段（本實施形離中，為可 見區域）的光的玻璃基板等基板（第2基板）^，並在基 25 200836375 26216pif 板61上，將上述螢光層62r、62(}、62b分別形成於各色 道>，件41R、41G、41B所對應的位置上。圖15C表示 4狀L再者’將螢光層62R、62G、62B最終僅形成於 口p刀區域上的方法本身已廣為人知。由於基板的表面 上沒有圖案化的科所產生的凹凸，且基㈣可使用未經 伴有磊晶成^層形成等高溫處理之步驟的基板，故於基板 6>1上不存在咼溫處理等所導致的彎曲等現象。因此，可使 ，光層62R、62G、62B的厚度更加精確且均勻。為了使 螢光層62R、62G、62B的厚度更進一步變得精確且均勻， 亦可視需要，在塗佈螢光層62R、62G、62B之前研磨基 板61以使其平坦化’及/或在形成螢光層62尺、62〇、62]3 之後研磨蚤光層62R、62G、62B以使其平坦化。再者， 螢光層62R、62G、62B亦可藉由例如絲網印刷而形成。 隨後，將圖15β所示之狀態的]jed結構層7〇的下表 面（與基板92相反侧的面）與圖15C所示之狀態的螢光 層62R、62G、62B的上表面（與基板61相反側的面）進 行接合。本實施形態中，由於螢光層62R、62g、62B是 使用環氧樹脂或者矽氧樹脂等具有黏接性的樹脂所構成 的，因而利用螢光層62R、62G、62B的黏接性將LED結 構層70與螢光層62R、62G、62B進行接合。當然，也可 另外使用與螢光層62R、62G、62B不同的具有透光性的 黏接劑來接合LED結構層70與螢光層62R、62G、62B。 其後，去除熱可塑性蠟93，藉此從LED結構層70上剝離 並去除基板92。圖16A表示該狀態。 26 200836375 26216pif 其後’ If由乾式餘刻等處理，在相鄰的led元件間的 位置上形成槽61a (圖16B)。 另一方面，利用眾所周知的半導體製程技術來準備驅 動電路基板53 (圖16C)。此處，驅動電路基板53上配置 有例如通常的CMOS製程的CMOS電路。並且，如圖17A 所示，在驅動電路基板53上，形成有用以與LED元件 • 41R、41G、41B電性連接的凸塊71、72。 馨其次’將圖16A所示之狀態的基板與形成有凸塊71、 72的驅動電路基板53以圖17A所示的方式進行對位。圖 18示思}'生表示该對位的情況。在圖1 $中，1 〇 1表示圖16 a 所不之狀態的基板，1〇2表示圖17A所示之形成有凸塊 71、72的驅動電路基板53。又，在圖18中，101a、l〇2a 分別示意性表示各基板1〇1、102上的相當於1晶片的區域。 進行上述對位，並將電極66、67與凸塊71、72分別 接合。圖17B表示該狀態。凸塊的上述接合與由此產生的 併合化是眾所皆知的技術。 * 繼而，對圖17B所示之狀態的併合化的基板進行切 割，以分割成各個晶片51。圖19表示該狀態。多個晶片 • 51藉由以上方法而一併完成。 • 其後’經過線接合及樹脂密封等眾所皆知的步驟< 後，完成如圖10所示之本實施形態的LED裝置21。 以該製造方法製造出本實施形態的LED裝置21後， 可如上所述，使螢光層62R、62G、62B的厚度更加精確 且均勻。因此，在產品間以及相同產品的多個LED元件 27 200836375 26216pif 不均，而且可更進 間，亦可更加降低發光色或發光強度的 一步提高良率。 以上對本發明的各實施形態進行了說明， 非限定於上述實施形態。 ~ 例如，在上述第2實施形態的LED裝置21中，若 由紅色LED元件41、綠色LED元件41G及藍色ledf gate electrode 73 (refer to Figure 13). The source is connected to the wiring pattern of the mouth horizontal source line 44R #目 connection. The above-mentioned poles are connected to the electrodes 74 connected by the bumps 72 on them. The gate electrode is hunted by the wiring pattern (4) to select the line view. The above-mentioned parties, the green 仃 selection switch, and the blue row selection, are also the same. The grounding wire 43 also functions as an electrode that is connected to the LED elements 41R, 4m, and 4ib. Further, in Fig. n, 75 is an insulating film such as a (four) film. As shown in Fig. 11, the anode of the red LED element 41R and the drain of the red switch 42R are provided on the electrodes 67, 74. Further, the cathode of the TM element 41R = also = precision is electrically connected by the bump 71 between the electrode 66 and the ground line 43. Similarly, the anode of the LED element 41G and the drain of the selection switch gamma, 42B are electrically connected by the bumps 72, respectively, and the cathode of the LED pieces 41G, 42B and the ground line 43 are respectively protruded by the bumps 71. And respectively = sexual connection. The bumps 71 and 72 are made of, for example, copper or gold. When the LED elements 41R of the respective colors flow between the electrodes 66 and 67, ultraviolet light is emitted from the active layer 64. In the red LED element 41R, the phosphor layer 62R is excited by the ultraviolet light from the active layer 64 to emit red 22 200836375 26216pif color light, which is emitted upward through the substrate 61. In the green LED element 41G, the phosphor layer 62G receives green light from the ultraviolet light from the active layer 64, and the green light is emitted upward through the substrate 61. In the color LED element 41G, the phosphor layer 62B is excited by the external light from the active layer 64 to emit blue light, and the blue light is emitted upward through the substrate 61. In the present embodiment, as shown in Fig. 11, a jug 61a is formed at a position between adjacent LEDs 7L on the substrate 61. The groove 61a is formed to be substantially perpendicular to the surface of the substrate. The light emitted from the phosphor layers 62R, 62G, and $ of the LED elements 41R, 41G, and 41B is not only upward but also travels in various directions. Therefore, if there is a groove 6U, light emitted from the glory layer of each coffee element is mixed with light emitted from the phosphor layer of the adjacent LED τ, causing interference. With respect to = because the groove 61a is formed on the substrate 61, the light is totally reflected on the surface of the groove 6u, so that the convergence of the light emitted by the phosphor layer of the LED element to the degree of the genus is determined. Directionality. Therefore, the interference caused by the mixing of the light emitted by the fluorescent layer of the fish = can be suppressed, so that the ratio of the ratio can be made. Of course, in the present invention, it is not necessary to form a groove. In the case where the groove 61 & is filled with a metal or the like, or the surface of the groove 61a is formed by steaming or the like, the same interference suppressing effect is transmitted. In the LED device of the present embodiment, in the wafer 51 2: #土板54, the electrodes 55 on the specific electrode support substrate 54 of the drive circuit substrate 53 of the wafer 51 are wire-bonded by the wire %. The 262I6pif is 'and the portion of the wire 56 is sealed by the resin 57. Generally, a wafer having an LED element includes a transparent substrate equivalent to the substrate 61 in Fig. 10, and is entirely sealed by a resin. The reason for this is that if the normal wafer is not formed in this manner, the durability is deteriorated, or the light extraction efficiency is lowered due to the high refractive index of the LED light-emitting layer. However, in the LED device of the present embodiment, the LED substrate 52 and the drive circuit substrate 53 are hybridized by the bumps 71 and 72. Further, as shown in FIG. 11, in the LED device of the present embodiment, the phosphor layers 62R, 62G, and 62B of the respective lEd elements 41R and 41G 41B are sandwiched between the led structure layer 70 and the substrate 61, respectively, so that the fluorescent light is emitted. The layers 62R, 62G, and 62B are not exposed to the outside even if they are not covered by a 4-inch protective film or the like. Therefore, according to the present embodiment, the influence of the external portions on the phosphor layers 62R, 62G, and 62B can be reduced without covering with a special protective film or the like, and durability can be improved. Further, the refractive index of the substrate 61 is set to be a refractive index intermediate to the refractive index of the refractive index of the LED light-emitting layer, whereby the decrease in the light extraction efficiency can be suppressed. Therefore, in the present embodiment, it is not necessary to resin-seal the entire crystal 51. However, in the present embodiment, only the portion of the wire 56 is made of resin. Of course, the towel of the present invention can be dried, for example, by the blade 51. In the case of the package, the package body 8la and the sealing cover 8lb of the display window are configured as a so-called ball grid package. The bottom surface of the package body 81a is provided by a solder ball 82. a path (not shown) is electrically connected to each of the electrodes 84 on the electrodes of the drive circuit substrate 53 by a wire and a wire. Next, referring to FIGS. 15A to 15C and FIGS. 16A to 16C, 17A to 17B and Fig. 18 illustrate an example of a method of manufacturing the LED device of the embodiment. Figs. 15A to 15C, Figs. 16A to 16C, Figs. 17A to 17B, and Fig. 19 are schematic diagrams respectively showing the steps of the manufacturing method. Fig. 18 is a schematic perspective view schematically showing a specific step of the manufacturing method. First, a substrate (first substrate) 91 is prepared, and the substrate (first substrate) 91 is an n-type impurity layer of the LED structure layer 70. The basis for the growth of 63 et al. As the substrate 91, use For example, a sapphire substrate or a siC substrate, etc. Subsequently, an LED structure layer 70 is formed on the substrate 91 in an amount corresponding to the number of LED elements 41R, 41G, 41B of the plurality of wafers 51 to be collectively produced, that is, on the substrate 91. The n-type impurity layer 63, the active layer 64, and the germanium-type impurity layer 65 are sequentially formed by the growth of the crystallites, and the unnecessary regions of the active layer 64 and the p-type impurity layer 65 are removed by etching. The type impurity layer 63 is formed directly on the entire surface of the substrate 91. Thereafter, the electrodes 66, 67 are formed of gold or the like, and are patterned into a specific shape by etching. Fig. 15A shows the state. The substrate (third substrate) 92 that holds the LED structure layer 70 and protects the LED structure layer 7 from surface damage is bonded to the surface of the LED layer 7〇 on the opposite side of the substrate. The bonding is temporary and will be followed. Here, the substrate 2 is bonded to the LED structure layer by the thermoplastic wax 93. Subsequently, the substrate 91 is removed from the LED layer 7 of the substrate 92. Fig. 15B shows the state. Ready to pass through a specific band (this embodiment is a visible area A substrate (second substrate) such as a light glass substrate of the region) is formed on the base 25 200836375 26216pif plate 61, and the phosphor layers 62r and 62 (} and 62b are formed in the respective color tracks>, and the pieces 41R and 41G are respectively formed. The position corresponding to 41B is shown in Fig. 15C, and the method of forming the phosphor layers 62R, 62G, and 62B only on the p-knife region is well known. Since the surface of the substrate has no irregularities generated by the patterned structure, and the substrate (4) can use a substrate which is not subjected to a step of high temperature processing such as epitaxial layer formation, there is no temperature treatment on the substrate 6 > Such as bending caused by phenomena. Therefore, the thickness of the light layers 62R, 62G, 62B can be made more precise and uniform. In order to further make the thickness of the phosphor layers 62R, 62G, 62B more precise and uniform, the substrate 61 may be polished to be flattened and/or formed before the phosphor layers 62R, 62G, 62B are applied, as desired. After the phosphor layers are 62 feet, 62 inches, and 62] 3, the calender layers 62R, 62G, and 62B are polished to be flattened. Furthermore, the phosphor layers 62R, 62G, 62B can also be formed by, for example, screen printing. Subsequently, the lower surface (the surface on the opposite side to the substrate 92) of the jed structure layer 7 of the state shown in Fig. 15β and the upper surface (the substrate) of the phosphor layers 62R, 62G, 62B in the state shown in Fig. 15C 61 faces on the opposite side) are joined. In the present embodiment, since the phosphor layers 62R, 62g, and 62B are formed of an adhesive resin such as an epoxy resin or a silicone resin, the adhesion of the phosphor layers 62R, 62G, and 62B is used for the LED. The structural layer 70 is bonded to the phosphor layers 62R, 62G, 62B. Of course, the light-transmitting adhesive different from the phosphor layers 62R, 62G, and 62B may be additionally used to bond the LED structure layer 70 and the phosphor layers 62R, 62G, and 62B. Thereafter, the thermoplastic wax 93 is removed, whereby the substrate 92 is peeled off from the LED structure layer 70. Fig. 16A shows this state. 26 200836375 26216pif Thereafter, If is processed by dry remnant or the like, a groove 61a is formed at a position between adjacent led elements (Fig. 16B). On the other hand, the drive circuit substrate 53 is prepared by a well-known semiconductor process technology (Fig. 16C). Here, a CMOS circuit of, for example, a normal CMOS process is disposed on the drive circuit substrate 53. Further, as shown in Fig. 17A, bumps 71 and 72 for electrically connecting the LED elements 41R, 41G, and 41B are formed on the drive circuit substrate 53. Next, the substrate in the state shown in Fig. 16A and the drive circuit substrate 53 on which the bumps 71 and 72 are formed are aligned in the manner shown in Fig. 17A. Figure 18 shows the situation of 'student' indicating the alignment. In Fig. 1$, 1 〇 1 indicates a substrate in a state of Fig. 16 a, and 1 〇 2 indicates a drive circuit substrate 53 on which bumps 71 and 72 are formed as shown in Fig. 17A. Further, in Fig. 18, 101a and 10a respectively schematically show regions corresponding to one wafer on each of the substrates 1'1, 102'. The above alignment is performed, and the electrodes 66, 67 are bonded to the bumps 71, 72, respectively. Fig. 17B shows this state. The above-described bonding of the bumps and the resulting combination are well known. * Then, the merged substrate in the state shown in Fig. 17B is cut to be divided into individual wafers 51. Fig. 19 shows this state. A plurality of wafers 51 are completed by the above method. • Thereafter, the steps of the wire bonding and the resin sealing are well known. Then, the LED device 21 of the present embodiment shown in Fig. 10 is completed. After the LED device 21 of the present embodiment is manufactured by this manufacturing method, the thicknesses of the phosphor layers 62R, 62G, and 62B can be made more precise and uniform as described above. Therefore, a plurality of LED elements 27 200836375 26216pif between products and the same product are uneven, and can be further advanced, and can further reduce the illuminating color or the luminous intensity to improve the yield. Each embodiment of the present invention has been described above, and is not limited to the above embodiment. For example, in the LED device 21 of the second embodiment, the red LED element 41, the green LED element 41G, and the blue led

件41B巾的任-個構成各單位像素，則可作行 示的顯示裝置。 #”、、曰頜 又，例如，在上述第2實施形態的LED裝置21中， 若使搭載於驅動電路基板53上的驅動電路構成為，響應紅 色光照明指令錢並僅使紅色LED元件他點亮，變應 綠，明指令信號並僅使綠色LED元件4m點亮：響 應監色光照明指令信號並僅使藍色LED元件41β點亮， 以及響應白色光照明指令信號並僅使所有led元件4ir、 MG、/1Β點亮，則可作為能夠選擇性切換紅色光、綠色 光、監色光及白色光之照明的照明裝置。由於上述照明裝 置中並不會產生干擾問題，因而無需上述槽61a。 [第2實施形態的變形例] 其次，以下將說明第2實施形態的LED裝置之製造方 法的變形例。 爹照圖20A〜20D及圖21A〜21C來說明本變形例的 LED裝置之製造方法。圖2〇A〜2〇D及圖21A〜21C是分 別不意性表示本變形例的LED裝置之製造方法的各步驟 的概略剖面圖。 28 200836375. ^oz j opif 首先’準備基板（第1基板）91，該基板（第1基板） 91成為使LED結構層7〇的η型雜質層63等磊晶成長的 基礎。作為基板91，使用例如藍寶石基板或者SiC基板等。 隨後，於基板91上形成LED結構層70，其數量相當於應 一併製造的多個LED晶片1的數量。亦即，於基板91上， 藉由磊晶成長而依次形成n型雜質層63、活性層64、及p 型雜質層65，且藉由蝕刻而去除活性層64及p型雜質層 65的無需區域。此時，n型雜質層63直接形成於基板％ 上的正個面上。其後’以金等形成電極66、67，並且經飿 刻而圖案化為特定形狀。圖20A表示該狀態。 另一方面，利用眾所皆知的半導體製程技術來準備驅 動電路基板53。此處，驅動電路基板53上配置有例如通 常的CMOS製程的CMOS電路。驅動電路基板53使用矽 基板，並以覆蓋矽基板之一部分的方式在該驅動電路基板 53上設有絕緣膜75。其後，如圖20B所示，該驅動電路 基板53上形成有用以與LED元件41R、41G、41B電性連 接的凸塊71、72。凸塊71、72形成為與電極43及電極74 分別電性導通。凸塊71、72及電極74、43例如以銅或金 等構成。目20B表示形成有凸塊71、72的驅動電路基板。 其次，將圖20A所示之狀態的基板與形成有凸塊71、 72的驅動電路基板53以圖2qc所示的方式進行對位。圖 18示意性表示該對位的情況。在圖18中，1〇1表示圖2〇a 所示之狀態的基板，1G2表示圖2GA所示之形成有凸塊 71、72的驅動電路基板53。又，在圖18中，1〇1&、i〇2a 29 200836375 26216pif 分別=性表不各基板1〇1、1()2上的相當於！晶片的區域。 進;^上述對位，並將電極66、67與凸塊71、72分別 接合。藉此’ LED結構層7〇的電極67與驅動電路基板53 的電極74經由凸塊72而電性導通。又，電極的氣驅動電 路基板f的電極43經由凸塊71而電性導通。圖2〇c表 广亥狀广、凸塊的上述接合與由此產生的併合化是眾所皆 知的技術。 從接合有驅動電路基板53的伽、结構層％ 朴"于\土板91。圖20D表示該狀態。該基板91之去除可 措由下述方^而進行，例如，以研磨機削除基板.或者 乂 :水機（冋壓水贺射〕或鋼絲鑛將led、结構層川斑 板91的邊界附近切斷。 /、 =，對η型雜質層63進行乾式韻刻等處理，以在如 0=所示之相鄰的咖元件間的位置上形成槽伽。 Μ ，準備透蝴定波段（本變釈种，為可見 ϋ)的光的玻璃基板等基板（第2基板）61，並在基板 ’將上述螢光層62R、62G、62B分別形成於各色哪 二21:410、41B所對應的位置。其後，於基板61上， 在圖21Α所示之槽63a所對應的位置上進 理，以形成如圖2】B所示的槽61b。再者，將f 專處 =、62Β最終卿成於—部分輯上的方法本/ :::。另外，由於基板61的表面上沒有 二= =凹凸，且基板6!可使用未經伴有蟲晶成長層 /皿免理之步驟板，故於基板61上柯在高溫處理等^ 30 200836375 zoziopifAny one of the members of the 41B towel can be used as a display device for each unit pixel. In the LED device 21 of the second embodiment, for example, the drive circuit mounted on the drive circuit board 53 is configured to respond to the red light illumination command and only the red LED element is used. Lights up, changes green, clears the command signal and only lights the green LED element 4m: responds to the color light illumination command signal and lights only the blue LED element 41β, and responds to the white light illumination command signal and only makes all the LED elements When 4ir, MG, and /1Β are lit, it can be used as an illumination device capable of selectively switching illumination of red light, green light, color light, and white light. Since the above illumination device does not cause interference, the above-described groove 61a is not required. [Modification of Second Embodiment] Next, a modification of the method of manufacturing the LED device of the second embodiment will be described below. The manufacture of the LED device of the present modification will be described with reference to Figs. 20A to 20D and Figs. 21A to 21C. 2A to 2D and FIGS. 21A to 21C are schematic cross-sectional views respectively showing steps of a method of manufacturing an LED device according to the present modification. 28 200836375. ^oz j opif First 'Preparation Base (first substrate) 91, the substrate (first substrate) 91 is a base for epitaxial growth of the n-type impurity layer 63 of the LED structure layer 7A, etc. As the substrate 91, for example, a sapphire substrate, a SiC substrate, or the like is used. The LED structure layer 70 is formed on the substrate 91 in an amount corresponding to the number of the plurality of LED chips 1 to be collectively manufactured. That is, on the substrate 91, the n-type impurity layer 63 is sequentially formed by epitaxial growth, and the activity is performed. The layer 64 and the p-type impurity layer 65 are removed by etching to remove unnecessary regions of the active layer 64 and the p-type impurity layer 65. At this time, the n-type impurity layer 63 is directly formed on the positive surface of the substrate %. The electrodes 66 and 67 are formed by gold or the like and patterned into a specific shape by engraving. This state is shown in Fig. 20A. On the other hand, the driving circuit substrate 53 is prepared by a well-known semiconductor process technology. A CMOS circuit of a normal CMOS process is disposed on the drive circuit substrate 53. The drive circuit substrate 53 is provided with a germanium substrate, and an insulating film 75 is provided on the drive circuit substrate 53 so as to cover one portion of the germanium substrate. As shown in FIG. 20B, the The drive circuit board 53 is formed with bumps 71 and 72 for electrically connecting the LED elements 41R, 41G, and 41B. The bumps 71 and 72 are electrically connected to the electrodes 43 and 74, respectively. The bumps 71 and 72 and The electrodes 74 and 43 are made of, for example, copper or gold. The 20B shows the drive circuit board on which the bumps 71 and 72 are formed. Next, the substrate shown in FIG. 20A and the drive circuit board on which the bumps 71 and 72 are formed are formed. 53 is aligned in the manner shown in Fig. 2qc. Fig. 18 schematically shows the case of the alignment. In Fig. 18, 1〇1 indicates the substrate in the state shown in Fig. 2A, and 1G2 indicates the state shown in Fig. 2GA. The drive circuit substrate 53 having the bumps 71 and 72 is formed. In addition, in Fig. 18, 1〇1&, i〇2a 29 200836375 26216pif = sex table is not equivalent to each of the substrates 1〇1, 1()2! The area of the wafer. The above alignment is performed, and the electrodes 66, 67 are joined to the bumps 71, 72, respectively. Thereby, the electrode 67 of the 'LED structure layer 7'' and the electrode 74 of the drive circuit board 53 are electrically connected via the bump 72. Further, the electrode 43 of the gas-driven circuit board f of the electrode is electrically connected via the bump 71. Fig. 2〇c shows that the above-mentioned joints and the resulting merges are widely known. The gamma and the structural layer % of the driving circuit substrate 53 are bonded to the \ soil plate 91. Fig. 20D shows this state. The removal of the substrate 91 can be performed by, for example, cutting the substrate with a grinder. Or: water machine (pressure water jet) or steel ore will be led, near the boundary of the structural layer of the slab 91 /, =, the n-type impurity layer 63 is subjected to dry rhyme processing or the like to form a groove gamma at a position between adjacent coffee elements as shown by 0 = Μ , ready to pass through the butterfly band (this The substrate (second substrate) 61 such as a glass substrate of light that is visible, and the phosphor layers 62R, 62G, and 62B are formed on the substrate 2 in respective colors 21:410 and 41B. Then, on the substrate 61, it is processed at a position corresponding to the groove 63a shown in Fig. 21A to form a groove 61b as shown in Fig. 2] B. Further, f is specialized =, 62 Β final Qing Cheng Yu - Part of the method of this / ::: In addition, since there is no two = = bump on the surface of the substrate 61, and the substrate 6! can be used without the step of growing the layer of insect crystal / dish Therefore, on the substrate 61, Ke is treated at high temperature, etc. ^ 30 200836375 zoziopif

導致的彎曲等現象。因此，可使螢光層62R、62G、62B 的厚度更加精確且均勻。為了使螢光層62r、62G、62B 的尽度更進一步變得精確且均勻，亦可視需要，在塗佈螢 光層62R、62G、62B之前研磨基板61以使其平坦化，及 /或在形成螢光層62R、62G、62B之後研磨螢光層62R、 62G、62B以使其平坦化。再者，螢光層62R、62〇、62B 亦可藉由例如絲網印刷而形成。又，本變形例中是在形成 a光層62R、62G、62B之後形成槽61b的，亦可利用眾 所皆知的方法，先形成槽61b，然後形成螢光層62r、62(}、 62B。 其次，將圖21B所示的基板61與圖21A所示的具備 LED結構層70及電極66的基板91進行對位，並將螢光 層62R、62G、62B與η型雜質層63以分別接觸的方式進 行接合。圖21C表示該狀態。 其後，以與第2實施形態相同的方式，對圖21C所示 之狀悲的併合化的基板進行切割，以分割成各個晶片。藉 此，完成如圖19所示的多個晶片51。 曰 接著，以與第2實施形態相同的方式，經過線接合及 樹脂密封等眾所皆知的步驟後，完成如圖1〇所示的LEd 裝置21。 以該製造方法製造出LED裝置21後，可如上所述， 使螢光層62R、62G、62B的厚度更加精確且均勻。因此， 在產品間以及相同產品的多個LED元件間，亦可更加降低 發光色及發光強度的不均，而且可更進一步提高良率。又: 31 200836375 26216pif 本變形例中，由於第2實施形態的第3基板使用形成有驅 動電路的驅動電路基板53，故可在基板去除/接合步驟中 省略1個步驟。 再者，本變形例中是使用搭載有驅動電路的驅動電路 基板53作為第3基板的，亦可取代驅動電路基板53，最 初將未搭載有驅動電路的配線板與LED結構層70進行接 ^八後以眾所皆知的方法於該配線板上形成驅動電路。 又，亦可將搭載有驅動電路的另一配線板以電性連接的方 ，接合於該配線板上。而且，亦可取代驅動電路基板^， 取初將基板（例如矽基板）與LED結構層70進行接合， f以於該基板上形成孔或進行通孔鍍敷等眾所皆知的方 ^形成與電極66及67電性導通的配線等，然後將該配 線與驅動魏·連接赠造LED裳置。 盆制Ϊ上所作的相說明，本發明可提供—種LED裝置及 的，護膜等覆蓋的情況下降低 厚，確且均勻，藉此可進—步提高良率。 L圖式間早說明】 晋夕21=思性表不形成本發明*1實施形態的led裝 置之主要部分的咖晶片的概略剖面圖。 制j m是表示本發明第1實施形態的㈣裝置之 衣化方法之一步驟的概略剖面圖。 圖3A〜3B是矣+闰_ 略剖面圖。.矛不® 2A〜2C之步驟的後續步驟的概 32 200836375 zoziopif 圖4A〜4B是表示圖3A〜3B之步驟的後續步驟的概 略剖面圖。 圖5是表示本發明第2實施形態的L E D裝置的概略方 塊圖。 ，6,表示圖5中的單位像素的電路圖。 圖7是本發明第2實施形態的LED裝置的LED元件 的配置圖。 圖8疋LED元件的另一配置例圖。 圖9疋LED元件的又一配置例圖。 圖10是表示本發明第2實施形態的LED裝置的概略 剖面圖。 圖11疋放大表示圖10的LED裝置的晶片的概略放大 剖面圖。 圖12是不意性表示圖1〇及圖n中所示晶片的LEd 基板的一個單位像素之部分的概略平面圖。 圖13是示意性表示圖10及圖u中所示晶片的驅動電 路基板的一個單位像素之部分的概略平面圖。 圖Η是表示本發明第2實施形態的LED裝置之變形 例的概略剖面圖。 圖15A〜15C是表示本發明第2實施形態的LED裝置 之製造方法之一步驟的概略剖面圖。 圖16A〜16C是表示圖15A〜15C之步驟的後續步驟 的概略剖面圖。 圖17A〜17B是表示圖16A〜16C之步驟的後續步驟 33 200836375 26216pif 的概略剖面圖。 圖18是示意性表示本發明第2實施形態的LED裝置 之製造方法之一步驟的概略立體圖。 圖19是表示圖17A〜17B之步驟的後續步驟的概略剖 面圖。 圖20A〜20D是表示本發明第2實施形態的LED裝置 之製造方法的變形例的步驟的概略剖面圖。 ^ 圖21A〜21C是表示圖20A〜20D之步驟的後續步驟 的概略剖面圖。 【主要元件符號說明】 1 : LED晶片 2、61 :第2基板 3 : LED元件 4、 62R、62G、62B ··螢光層 5、 63 : η型雜質層 6、 64 :活性層（發光層） • 7、65 : ρ型雜質層 8、9、55、74、66、67、84 :電極 • 10、70 : LED 結構層 ^ 11、91 :第1基板（基板） 12、 92 :第3基板（基板） 13、 93 :熱可塑性蠟 21 : LED裝置 30 :單位像素 34 200836375. ΔΌΔ 1 〇pif 31 :驅動電路 32 :垂直掃描電路 3 3 :水平掃描電路 34 ··影像信號處理電路 41R :紅色LED元件 41G :綠色LED元件 41B ··藍色1^0元件 / 42R :紅色行選擇開關 • 42G :綠色行選擇開關 42B :藍色行選擇開關 43 :電極（接地線） 44R、44G、44B :水平源極線 45R、45G、45B :垂直選擇線 71、72 :凸塊 51 ·晶片 52 : LED基板 • 53 :驅動電路基板 54 :支持基板 - 56、83 ··導線 , 57 :樹脂 61a、61b、63a :槽 7 3 :間極電極 75 :絕緣膜 81 :封裝 35 200836375 26216pif 81a :封裝本體 81b :密封蓋 82 :焊錫球 101、102 :基板 101a、102a :相當於1晶片的區域Caused by bending and other phenomena. Therefore, the thickness of the phosphor layers 62R, 62G, 62B can be made more precise and uniform. In order to make the phosphor layers 62r, 62G, 62B more precise and uniform, the substrate 61 may be polished to be flattened before the phosphor layers 62R, 62G, 62B are applied, and/or After the phosphor layers 62R, 62G, and 62B are formed, the phosphor layers 62R, 62G, and 62B are polished to be planarized. Further, the phosphor layers 62R, 62A, 62B may also be formed by, for example, screen printing. Further, in the present modification, the groove 61b is formed after the a-light layers 62R, 62G, and 62B are formed, and the groove 61b may be formed first by a well-known method, and then the phosphor layers 62r, 62 (}, 62B may be formed. Next, the substrate 61 shown in FIG. 21B is aligned with the substrate 91 having the LED structure layer 70 and the electrode 66 shown in FIG. 21A, and the phosphor layers 62R, 62G, 62B and the n-type impurity layer 63 are respectively This is in the form of contact. Fig. 21C shows this state. Thereafter, in the same manner as in the second embodiment, the substrate which is merged in the shape shown in Fig. 21C is cut and divided into individual wafers. The plurality of wafers 51 as shown in Fig. 19 are completed. Then, in the same manner as in the second embodiment, after a well-known step such as wire bonding and resin sealing, the LEd device shown in Fig. 1A is completed. 21. After the LED device 21 is manufactured by the manufacturing method, the thickness of the phosphor layers 62R, 62G, 62B can be made more precise and uniform as described above. Therefore, between the products and between the plurality of LED elements of the same product, Can further reduce the illuminating color and the unevenness of the illuminating intensity, and can be more In addition, in the present modification, the third substrate of the second embodiment uses the drive circuit substrate 53 on which the drive circuit is formed. Therefore, one step can be omitted in the substrate removal/joining step. In the present modification, the drive circuit board 53 on which the drive circuit is mounted is used as the third substrate, and instead of the drive circuit board 53, the wiring board on which the drive circuit is not mounted is first connected to the LED structure layer 70. Then, a driving circuit is formed on the wiring board by a well-known method. Alternatively, another wiring board on which the driving circuit is mounted may be electrically connected to the wiring board, and may be replaced. The driving circuit substrate is formed by bonding a substrate (for example, a germanium substrate) to the LED structure layer 70, f is formed on the substrate, or is formed by through-hole plating, and is formed with electrodes 66 and 67. Electrically conductive wiring, etc., and then the wiring is connected with the driver Wei. The LEDs are placed on the pot. The invention can provide a kind of LED device and the cover film and the like. Thick, accurate and uniform, so as to improve the yield. L mode between the early description] Jin Xi 21 = thinking table does not form a schematic section of the main part of the LED device of the embodiment of the present invention *1 Fig. 3 is a schematic cross-sectional view showing a step of the method of dressing the device of the fourth embodiment of the present invention. Figs. 3A to 3B are schematic cross-sectional views of 矣+闰_. The steps of the steps of 2A to 2C are not shown. 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 6, represents a circuit diagram of the unit pixel in FIG. Fig. 7 is a layout view of an LED element of an LED device according to a second embodiment of the present invention. Fig. 8 is a diagram showing another example of the arrangement of the LED elements. Fig. 9 is a view showing another example of the arrangement of the LED elements. Fig. 10 is a schematic cross-sectional view showing an LED device according to a second embodiment of the present invention. Fig. 11 is an enlarged cross-sectional view showing the wafer of the LED device of Fig. 10 in an enlarged manner. Figure 12 is a schematic plan view showing a portion of one unit pixel of the LEd substrate of the wafer shown in Figures 1 and n. Fig. 13 is a schematic plan view schematically showing a part of one unit pixel of the drive circuit substrate of the wafer shown in Figs. 10 and u. Fig. 概略 is a schematic cross-sectional view showing a modified example of the LED device according to the second embodiment of the present invention. 15A to 15C are schematic cross-sectional views showing a step of a method of manufacturing an LED device according to a second embodiment of the present invention. 16A to 16C are schematic cross-sectional views showing subsequent steps of the steps of Figs. 15A to 15C. 17A to 17B are schematic cross-sectional views showing a subsequent step 33 200836375 26216pif of the steps of Figs. 16A to 16C. Fig. 18 is a schematic perspective view showing a step of a method of manufacturing an LED device according to a second embodiment of the present invention. Fig. 19 is a schematic cross-sectional view showing a step subsequent to the steps of Figs. 17A to 17B. 20A to 20D are schematic cross-sectional views showing the steps of a modification of the method of manufacturing the LED device according to the second embodiment of the present invention. Figs. 21A to 21C are schematic cross-sectional views showing subsequent steps of the steps of Figs. 20A to 20D. [Description of main component symbols] 1 : LED chip 2, 61: 2nd substrate 3: LED elements 4, 62R, 62G, 62B · · Luminescent layer 5, 63 : n-type impurity layer 6, 64: active layer (light-emitting layer • 7, 65 : p-type impurity layer 8, 9, 55, 74, 66, 67, 84: electrode • 10, 70: LED structure layer 11 , 91 : first substrate (substrate) 12, 92 : 3 Substrate (substrate) 13, 93: Thermoplastic wax 21: LED device 30: unit pixel 34 200836375. ΔΌΔ 1 〇pif 31: drive circuit 32: vertical scanning circuit 3 3 : horizontal scanning circuit 34 · image signal processing circuit 41R: Red LED element 41G: Green LED element 41B ··Blue 1^0 element / 42R : Red line selection switch • 42G : Green line selection switch 42B : Blue line selection switch 43 : Electrode (ground wire) 44R, 44G, 44B : Horizontal source lines 45R, 45G, 45B: vertical selection lines 71, 72: bumps 51 · wafers 52 : LED substrates • 53 : drive circuit substrate 54 : support substrates - 56, 83 · wires, 57: resin 61a, 61b, 63a: slot 7 3: interlayer electrode 75: insulating film 81: package 35 200836375 26216pif 81a: package body 81b: sealed 82: solder ball 101: substrate 101a, 102a: 1 corresponds to a region of the wafer

3636

Claims (1)

200836375 26216pif 十、申請專利範圍： 1.-種LED裝置之製造方法，其特徵在於包括以 段： 在第1基板上，形成包含發光層並構成LED元件 LED結構層； 在透過特定波段的光的第2基板上，形成螢光層，該 螢光層中含有受到來自上述發光層的光的激發而發=不g 波長的光的螢光物質； 在上述第1基板的上述LED結構層上，接合第3基板； 從接合著上述第3基板的上述LED結構層去除上述第 1基板；以及 在接合著上述第3基板且去除了上述第丨基板的上述 LED結構層，接合具備上述螢光層的上述第2基板，以使 上述LED結構層與上述螢光層接觸。 2·—種LED裝置之製造方法，其特徵在於包括以下階 段： 在第1基板上，形成包含發光層並構成LED元件的 LED結構層； 在透過特定波段的光的第2基板上，形成螢光層，該 螢光層中含有受到來自上述發光層的光的激發而發出不同 波長的光的螢光物質； 在形成於上述第1基板上的上述LED結構層，接合第 3基板； 從接合著上述第3基板的上述LED結構層去除上述第 37 200836375 26216pif 1基板； 在接合著上述第3基板且去除了上述第！基板的上述 LED結構層，接合形成於上述f 2基板上的上述發光層； 以及200836375 26216pif X. Patent Application Range: 1. A method for manufacturing an LED device, comprising: forming a light-emitting layer on a first substrate and forming an LED structure layer of an LED element; a phosphor layer is formed on the second substrate, and the phosphor layer contains a fluorescent substance that is excited by light from the light-emitting layer and emits light having a wavelength of not g; on the LED structure layer of the first substrate, Bonding the third substrate; removing the first substrate from the LED structure layer bonded to the third substrate; and bonding the LED layer to the LED structure layer on which the third substrate is bonded and removing the second substrate The second substrate is such that the LED structure layer is in contact with the phosphor layer. A method of manufacturing an LED device, comprising: forming an LED structure layer including a light-emitting layer and constituting an LED element on a first substrate; and forming a firefly on a second substrate that transmits light of a specific wavelength band a light layer containing a fluorescent substance that emits light of different wavelengths by excitation of light from the light-emitting layer; and bonding the third substrate to the LED structure layer formed on the first substrate; The LED structure layer on the third substrate is removed from the 37th 200836375 26216pif 1 substrate; the third substrate is bonded to the third substrate; The LED structure layer of the substrate is bonded to the light-emitting layer formed on the f 2 substrate; 具有上述第2基板、形成於上述第2基板上的上述 金光層、及上it LED結構層之接讀，分㈣含有一 一個以上的上述LED元件的部分。 制、3.如申請專利範圍第1項或第2項所述之LED裝置之 iie方法，其特徵在於更包括以下階段： 在將上述LED結構層與上述榮光層進 階段之後，從上述LED結構層去除上述第3基板^上过 ,、4.如申請專利範圍第！項或第2項所述之咖裝置之 方法，其特徵在於更包括以下階段： 準備電路基板，該電路基板搭載有_上述 的驅動電路；以及 T 進行接合的上述 3基板與上述電 在將上述LED結構層與上述螢光層 ί1白4又之後’將上述LED結構層或者上述第 路基板進行接合。 ,5.如申請專利範圍第1項或第2項所述之LED妒置之 製造方法，其概在於，上述第3基板為電路基板。、 6. 如申請專利範圍第5項所述之LED裴置之製造方 法，其特徵在於，作為上述第3基板的上述電路基板，是 搭載有驅動上述LED元件的電路的電路基板。 7. 如申請專利範圍第1項或第2項所述之LED裝置之 38 200836375 262I6pif 製造方法二其特徵在於，形成上述LED結構層的上述階段 中’包括藉由蠢晶成長而形成上述LED、结構層之至少1 層的階段。 ,8·如申請專利範圍第1項或第2項所述之lED裝置之 製造方法，其特徵在於，上述咖裝置含有多個上述⑽ 且上述LED裝置是減影像信號或者其他顯示控制 ^ 虎來進行彩色顯示或黑白顯示的顯示装置。 9.一種LED裝置，其特徵在於包括： 元件LED結構層，該結制包含發光層並構成㈣ 基板，透過特定波段的光；以及 螢光層’崎在M LED結構層與上縣板之間 螢自上迷發光層的光的激發而發出不同波長的光的 在於=申請專·圍第9項所述之哪1置，其特徵 上述LED元件的數量為兩個或兩個以上， 向上述兩個或兩個以上咖元件中的至少 ^的^^的發从，不同於向上述兩個或兩個以上 色。兀白、另外至少一個咖元件的外部發出的發光 11.如申請專利範圍第9項所述之哪裝置 =，上迷LED元件的數量為兩個或兩個以上，‘二 衣置構成根據影像信號或者其他顯示控制信號來進㈣色 39 200836375 26216pif 顯示或黑白顯示的顯示裝置。 12.如申請專利範圍第9項至第11項中任一項所述之 LED裝置，其特徵在於包括電路基板，該電路基板搭載有 驅動上述LED元件的驅動電路，且該電路基板與上述LED 元件電性連接。The second substrate, the gold light layer formed on the second substrate, and the upper LED structure layer are read, and (4) a portion including the one or more LED elements. The iie method of the LED device according to claim 1 or 2, further comprising the following steps: after the step of introducing the LED structure layer and the glory layer, the LED structure The layer is removed from the above third substrate, and 4. as claimed in the patent scope! The method of claim 2, further comprising the steps of: preparing a circuit board on which the above-described driving circuit is mounted; and the three substrates to which T is bonded and the electric The LED structure layer is bonded to the above-mentioned LED structure layer or the above-mentioned first substrate after the above-mentioned phosphor layer ί1 white. The method of manufacturing an LED device according to the first or second aspect of the invention, wherein the third substrate is a circuit board. 6. The method of manufacturing the LED device according to the fifth aspect of the invention, wherein the circuit board as the third substrate is a circuit board on which a circuit for driving the LED element is mounted. 7. The method of manufacturing the LED device according to claim 1 or claim 2, wherein the forming of the LED structure layer includes forming the LED by stupid crystal growth. The stage of at least 1 layer of the structural layer. 8. The method of manufacturing the lED device according to claim 1 or 2, wherein the coffee device comprises a plurality of the above (10) and the LED device is a reduced image signal or other display control. A display device that performs color display or black and white display. 9. An LED device, comprising: an element LED structure layer, the junction comprising a light-emitting layer and constituting (4) a substrate, transmitting light of a specific wavelength band; and a fluorescent layer 'sat between the M LED structure layer and the upper county plate In the case where the light of the light-emitting layer is excited by the light-emitting layer, the light of the different wavelengths is emitted, and the number of the LED elements is two or more. At least two of the two or more coffee elements are different from the two or more colors.兀 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 Signal or other display control signal to enter (four) color 39 200836375 26216pif display device or black and white display device. The LED device according to any one of claims 9 to 11, wherein the circuit board includes a circuit board on which the driving circuit for driving the LED element is mounted, and the circuit board and the LED The components are electrically connected. 40 20083637540 200836375 圖2C 200836375Figure 2C 200836375 圖3B 200836375Figure 3B 200836375 Ιι〇Ιι〇 圖4B 31200836375 影像信號- 影像信號處理驅 34 33 水平掃描電路 44B 44GFigure 4B 31200836375 Image Signal - Image Signal Processing Drive 34 33 Horizontal Scan Circuit 44B 44G 200836375200836375 200836375200836375 圖7 200836375 200836375Figure 7 200836375 200836375 3030 圖9 200836375Figure 9 200836375 200836375200836375 200836375200836375 圖12 200836375 β G R 5 5 5 4 4 4Figure 12 200836375 β G R 5 5 5 4 4 4 β G 4 4 4 4 圖13 200836375β G 4 4 4 4 Figure 13 200836375 200836375200836375 圖15A 92Figure 15A 92 63 64 65 圖15B φ 62R 62B 62G 62R 62B63 64 65 Figure 15B φ 62R 62B 62G 62R 62B 圖15C 200836375Figure 15C 200836375 }ι〇 圖16A}ι〇 Figure 16A 圖16B 75Figure 16B 75 圖16C 200836375Figure 16C 200836375 6161 圖17AFigure 17A 圖17B 200836375Figure 17B 200836375 圖18Figure 18 200836375200836375 70 6620083637570 66200836375 67、 65 64 63, 9167, 65 64 63, 91 圖20D 200836375Figure 20D 200836375 70 3 457 圖21A70 3 457 Figure 21A 6262 圖21CFigure 21C
TW096143767A 2006-11-20 2007-11-19 Led device and the fabricating method thereof TWI420691B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006312541 2006-11-20

Publications (2)

Publication Number Publication Date
TW200836375A true TW200836375A (en) 2008-09-01
TWI420691B TWI420691B (en) 2013-12-21

Family

ID=39429713

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096143767A TWI420691B (en) 2006-11-20 2007-11-19 Led device and the fabricating method thereof

Country Status (3)

Country Link
JP (1) JP5309996B2 (en)
TW (1) TWI420691B (en)
WO (1) WO2008062783A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102473704A (en) * 2009-07-20 2012-05-23 欧司朗光电半导体有限公司 Method for manufacturing a light source and light source

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI440210B (en) 2007-01-22 2014-06-01 Cree Inc Illumination devices using externally interconnected arrays of light emitting devices, and methods of fabricating same
JP4799606B2 (en) * 2008-12-08 2011-10-26 株式会社東芝 Optical semiconductor device and method for manufacturing optical semiconductor device
JP4724222B2 (en) 2008-12-12 2011-07-13 株式会社東芝 Method for manufacturing light emitting device
CN103050601B (en) * 2009-03-11 2015-10-28 晶元光电股份有限公司 Light-emitting device
US8273588B2 (en) * 2009-07-20 2012-09-25 Osram Opto Semiconductros Gmbh Method for producing a luminous device and luminous device
US8232117B2 (en) * 2010-04-30 2012-07-31 Koninklijke Philips Electronics N.V. LED wafer with laminated phosphor layer
JP4875185B2 (en) 2010-06-07 2012-02-15 株式会社東芝 Optical semiconductor device
EP2751852A1 (en) * 2011-08-30 2014-07-09 Koninklijke Philips N.V. Method of bonding a substrate to a semiconductor light emitting device
JP2012191225A (en) * 2012-05-23 2012-10-04 Mitsubishi Electric Corp Light-emitting device
US11792898B2 (en) 2012-07-01 2023-10-17 Ideal Industries Lighting Llc Enhanced fixtures for area lighting
US11160148B2 (en) 2017-06-13 2021-10-26 Ideal Industries Lighting Llc Adaptive area lamp
JP6325541B2 (en) * 2012-08-07 2018-05-16 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． LED package and manufacturing method thereof
KR101923673B1 (en) * 2012-09-13 2018-11-29 서울바이오시스 주식회사 Method of fabricating gallium nitrded based semiconductor device
CN103544895A (en) * 2013-11-01 2014-01-29 广东威创视讯科技股份有限公司 Light-emitting diode (LED) display module and manufacturing method thereof
CN107924653B (en) * 2015-09-11 2020-02-28 夏普株式会社 Image display device and method for manufacturing image display element
US10529696B2 (en) * 2016-04-12 2020-01-07 Cree, Inc. High density pixelated LED and devices and methods thereof
WO2019028314A1 (en) 2017-08-03 2019-02-07 Cree, Inc. High density pixelated-led chips and chip array devices, and fabrication methods
US10734363B2 (en) 2017-08-03 2020-08-04 Cree, Inc. High density pixelated-LED chips and chip array devices
US10439101B2 (en) * 2017-08-18 2019-10-08 Intel Corporation Micro light-emitting diode (LED) elements and display
FR3076170B1 (en) * 2017-12-22 2020-05-15 Commissariat A L'energie Atomique Et Aux Energies Alternatives METHOD FOR DEFERRING ELECTROLUMINESCENT STRUCTURES
US10529773B2 (en) 2018-02-14 2020-01-07 Cree, Inc. Solid state lighting devices with opposing emission directions
CN110323212A (en) * 2018-03-29 2019-10-11 群创光电股份有限公司 Electronic device
US10903265B2 (en) 2018-12-21 2021-01-26 Cree, Inc. Pixelated-LED chips and chip array devices, and fabrication methods
FR3099966B1 (en) 2019-08-16 2021-09-24 Commissariat Energie Atomique Manufacturing process of optoelectronic devices
WO2021087109A1 (en) 2019-10-29 2021-05-06 Cree, Inc. Texturing for high density pixelated-led chips
JP7010276B2 (en) * 2019-11-12 2022-02-10 王子ホールディングス株式会社 Absorbent article manufacturing equipment
JP7478947B2 (en) * 2020-04-13 2024-05-08 日亜化学工業株式会社 Method for manufacturing a light emitting device
US11437548B2 (en) 2020-10-23 2022-09-06 Creeled, Inc. Pixelated-LED chips with inter-pixel underfill materials, and fabrication methods
WO2023213450A1 (en) * 2022-05-03 2023-11-09 Ams-Osram International Gmbh Method for manufacturing a plurality of semiconductor chips and semiconductor chip

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3083783B2 (en) * 1997-06-25 2000-09-04 株式会社東芝 Gallium nitride based semiconductor light emitting device and light emitting device
JP4461616B2 (en) * 2000-12-14 2010-05-12 ソニー株式会社 Element transfer method, element holding substrate forming method, and element holding substrate
JP3840424B2 (en) * 2002-03-28 2006-11-01 富士写真フイルム株式会社 Stimulable phosphor, radiation imaging method and radiation imaging material
KR100495215B1 (en) * 2002-12-27 2005-06-14 삼성전기주식회사 VERTICAL GaN LIGHT EMITTING DIODE AND METHOD OF PRODUCING THE SAME
JP2005063781A (en) * 2003-08-11 2005-03-10 Fuji Xerox Co Ltd Display device and its manufacturing method
JP2007335412A (en) * 2007-08-03 2007-12-27 Idemitsu Kosan Co Ltd Multicolor luminescent device and its manufacturing method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102473704A (en) * 2009-07-20 2012-05-23 欧司朗光电半导体有限公司 Method for manufacturing a light source and light source

Also Published As

Publication number Publication date
JPWO2008062783A1 (en) 2010-03-04
WO2008062783A1 (en) 2008-05-29
JP5309996B2 (en) 2013-10-09
TWI420691B (en) 2013-12-21

Similar Documents

Publication Publication Date Title
TW200836375A (en) LED device and the fabricating method thereof
JP6722262B2 (en) Micro LED array display device
JP2008262993A (en) Display device
CN100561759C (en) White light emitting device
US10333035B2 (en) Method of manufacturing light emitting device package
KR101109267B1 (en) Single phosphor layer photonic device for generating white light or color lights
JP4254141B2 (en) Light emitting device
CN103003966A (en) Light emitting diode chip having wavelength conversion layer and manufacturing method thereof, and package including same and manufacturing method thereof
JP2005183777A (en) Semiconductor device and its manufacturing method
JP4967548B2 (en) Light emitting device
KR20190070928A (en) Display device and method for manufacturing such device
CN210516726U (en) Full-color display chip
JP3303154B2 (en) Semiconductor light emitting device
JP5278175B2 (en) Light emitting device
WO2021020393A1 (en) Method for manufacturing image display device and image display device
KR20190091658A (en) Semiconductor light emitting device and method of manufacturing the same
WO2021000383A1 (en) Light-emitting device, method for preparing light-emitting device, and display apparatus
WO2021014972A1 (en) Image display device manufacturing method and image display device
JP7390942B2 (en) LED light emitting device
JP7410734B2 (en) LED light emitting device
KR20190091657A (en) Semiconductor light emitting device and method of manufacturing the same
CN211088274U (en) Display device
EP4060753A1 (en) Light-emitting device for display and display apparatus comprising same
TWI689093B (en) Light emitting element and display device
KR102017733B1 (en) Semiconductor light emitting device and method of manufacturing the same