JP5813636B2 - 光源の製造方法及び光源 - Google Patents

光源の製造方法及び光源 Download PDF

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Publication number
JP5813636B2
JP5813636B2 JP2012521009A JP2012521009A JP5813636B2 JP 5813636 B2 JP5813636 B2 JP 5813636B2 JP 2012521009 A JP2012521009 A JP 2012521009A JP 2012521009 A JP2012521009 A JP 2012521009A JP 5813636 B2 JP5813636 B2 JP 5813636B2
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JP
Japan
Prior art keywords
light emitting
light
semiconductor body
emitting diode
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2012521009A
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English (en)
Japanese (ja)
Other versions
JP2012533895A5 (https=
JP2012533895A (ja
Inventor
ベルトホールド ハーン
ベルトホールド ハーン
マルクス マウテ
マルクス マウテ
ジークフリート ヘルマン
ジークフリート ヘルマン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of JP2012533895A publication Critical patent/JP2012533895A/ja
Publication of JP2012533895A5 publication Critical patent/JP2012533895A5/ja
Application granted granted Critical
Publication of JP5813636B2 publication Critical patent/JP5813636B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/01—Manufacture or treatment
    • H10H29/036—Manufacture or treatment of packages
    • H10H29/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/01—Manufacture or treatment
    • H10H29/036—Manufacture or treatment of packages
    • H10H29/0361—Manufacture or treatment of packages of wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means

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  • Led Device Packages (AREA)
  • Led Devices (AREA)
JP2012521009A 2009-07-20 2010-07-16 光源の製造方法及び光源 Expired - Fee Related JP5813636B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102009033915.9 2009-07-20
DE102009033915.9A DE102009033915B4 (de) 2009-07-20 2009-07-20 Verfahren zur Herstellung eines Leuchtmittels und Leuchtmittel
PCT/EP2010/060345 WO2011009821A1 (de) 2009-07-20 2010-07-16 Verfahren zur herstellung eines leuchtmittels und leuchtmittel

Publications (3)

Publication Number Publication Date
JP2012533895A JP2012533895A (ja) 2012-12-27
JP2012533895A5 JP2012533895A5 (https=) 2013-08-01
JP5813636B2 true JP5813636B2 (ja) 2015-11-17

Family

ID=43016842

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012521009A Expired - Fee Related JP5813636B2 (ja) 2009-07-20 2010-07-16 光源の製造方法及び光源

Country Status (6)

Country Link
EP (1) EP2457254B1 (https=)
JP (1) JP5813636B2 (https=)
KR (1) KR20120038511A (https=)
CN (1) CN102473704A (https=)
DE (1) DE102009033915B4 (https=)
WO (1) WO2011009821A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11056473B2 (en) 2018-11-27 2021-07-06 Samsung Electronics Co., Ltd. Micro light source array, display device having the same, and method of manufacturing display device

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102012202928A1 (de) * 2012-02-27 2013-08-29 Osram Gmbh Lichtquelle mit led-chip und leuchtstoffschicht
DE102013205179A1 (de) 2013-03-25 2014-09-25 Osram Gmbh Verfahren zum Herstellen einer elektromagnetische Strahlung emittierenden Baugruppe und elektromagnetische Strahlung emittierende Baugruppe
GB201413578D0 (en) * 2014-07-31 2014-09-17 Infiniled Ltd A colour iled display on silicon

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5940683A (en) * 1996-01-18 1999-08-17 Motorola, Inc. LED display packaging with substrate removal and method of fabrication
JP3473396B2 (ja) * 1998-04-23 2003-12-02 松下電器産業株式会社 光情報処理装置
EP0977063A1 (en) * 1998-07-28 2000-02-02 Interuniversitair Micro-Elektronica Centrum Vzw A socket and a system for optoelectronic interconnection and a method of fabricating such socket and system
JP3652945B2 (ja) * 1999-12-28 2005-05-25 松下電器産業株式会社 光情報処理装置
JP4182661B2 (ja) * 2001-10-31 2008-11-19 ソニー株式会社 画像表示装置及びその製造方法
JP2005093649A (ja) * 2003-09-17 2005-04-07 Oki Data Corp 半導体複合装置、ｌｅｄプリントヘッド、及び、それを用いた画像形成装置
US7294961B2 (en) * 2004-03-29 2007-11-13 Articulated Technologies, Llc Photo-radiation source provided with emissive particles dispersed in a charge-transport matrix
CN1622730A (zh) * 2004-12-16 2005-06-01 新磊微制造股份有限公司 发光模块
TWI420691B (zh) * 2006-11-20 2013-12-21 尼康股份有限公司 Ｌｅｄ裝置及其製造方法
DE102007010244A1 (de) * 2007-02-02 2008-08-07 Osram Opto Semiconductors Gmbh Anordnung und Verfahren zur Erzeugung von Mischlicht
JP2008262993A (ja) * 2007-04-10 2008-10-30 Nikon Corp 表示装置
EP1988577B1 (en) * 2007-04-30 2017-04-05 Tridonic Jennersdorf GmbH Light emitting diode module with silicon platform

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11056473B2 (en) 2018-11-27 2021-07-06 Samsung Electronics Co., Ltd. Micro light source array, display device having the same, and method of manufacturing display device
US11652093B2 (en) 2018-11-27 2023-05-16 Samsung Electronics Co., Ltd. Micro light source array, display device having the same, and method of manufacturing display device

Also Published As

Publication number Publication date
KR20120038511A (ko) 2012-04-23
DE102009033915B4 (de) 2022-05-25
WO2011009821A1 (de) 2011-01-27
EP2457254B1 (de) 2020-03-18
JP2012533895A (ja) 2012-12-27
DE102009033915A1 (de) 2011-01-27
CN102473704A (zh) 2012-05-23
EP2457254A1 (de) 2012-05-30

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