CN102471910B - 用于无孔隙亚微观特征填充的包含抑制剂的金属电镀组合物 - Google Patents

用于无孔隙亚微观特征填充的包含抑制剂的金属电镀组合物 Download PDF

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Publication number
CN102471910B
CN102471910B CN201080033648.9A CN201080033648A CN102471910B CN 102471910 B CN102471910 B CN 102471910B CN 201080033648 A CN201080033648 A CN 201080033648A CN 102471910 B CN102471910 B CN 102471910B
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China
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composition according
copper
alkylene oxide
additive
oxide
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Chinese (zh)
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CN102471910A (zh
Inventor
C·勒格尔-格普费特
R·B·雷特尔
D·迈耶
A·哈格
C·埃姆内特
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BASF SE
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BASF SE
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    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00Electroplating: Baths therefor
    • C25D3/02Electroplating: Baths therefor from solutions
    • C25D3/38Electroplating: Baths therefor from solutions of copper
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00Electroplating: Baths therefor
    • C25D3/02Electroplating: Baths therefor from solutions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00Electroplating: Baths therefor
    • C25D3/02Electroplating: Baths therefor from solutions
    • C25D3/38Electroplating: Baths therefor from solutions of copper
    • C25D3/40Electroplating: Baths therefor from solutions of copper from cyanide baths, e.g. with Cu+

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Electrochemistry (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • General Physics & Mathematics (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Chemically Coating (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Polyethers (AREA)
  • Oxygen, Ozone, And Oxides In General (AREA)
  • Paints Or Removers (AREA)
CN201080033648.9A 2009-07-30 2010-07-19 用于无孔隙亚微观特征填充的包含抑制剂的金属电镀组合物 Active CN102471910B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US22980909P 2009-07-30 2009-07-30
US61/229,809 2009-07-30
PCT/EP2010/060375 WO2011012475A1 (en) 2009-07-30 2010-07-19 Composition for metal plating comprising suppressing agent for void free submicron feature filling

Publications (2)

Publication Number Publication Date
CN102471910A CN102471910A (zh) 2012-05-23
CN102471910B true CN102471910B (zh) 2016-01-20

Family

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CN201080033648.9A Active CN102471910B (zh) 2009-07-30 2010-07-19 用于无孔隙亚微观特征填充的包含抑制剂的金属电镀组合物

Country Status (11)

Country Link
US (1) US9617647B2 (enExample)
EP (1) EP2459779B1 (enExample)
JP (2) JP5775077B2 (enExample)
KR (1) KR101738708B1 (enExample)
CN (1) CN102471910B (enExample)
IL (1) IL217234A (enExample)
MY (1) MY160150A (enExample)
RU (1) RU2539895C2 (enExample)
SG (2) SG10201404301WA (enExample)
TW (1) TWI515341B (enExample)
WO (1) WO2011012475A1 (enExample)

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RU2013133648A (ru) 2010-12-21 2015-01-27 Басф Се Композиция для электролитического осаждения металлов, содержащая выравнивающий агент
EP2530102A1 (en) 2011-06-01 2012-12-05 Basf Se Additive and composition for metal electroplating comprising an additive for bottom-up filling of though silicon vias
WO2012164509A1 (en) 2011-06-01 2012-12-06 Basf Se Composition for metal electroplating comprising an additive for bottom-up filling of though silicon vias and interconnect features
US20130133243A1 (en) 2011-06-28 2013-05-30 Basf Se Quaternized nitrogen compounds and use thereof as additives in fuels and lubricants
EP2917265B1 (en) 2012-11-09 2019-01-02 Basf Se Composition for metal electroplating comprising leveling agent
EP3141633B1 (en) * 2015-09-10 2018-05-02 ATOTECH Deutschland GmbH Copper plating bath composition
EP3559317B1 (en) * 2016-12-20 2025-02-12 Basf Se Composition for metal plating comprising suppressing agent for void free filling
CN107604414B (zh) * 2017-08-22 2020-03-24 珠海市奥美伦精细化工有限公司 一种铝及铝合金阳极氧化高温无镍封闭剂
KR102641595B1 (ko) 2017-09-04 2024-02-27 바스프 에스이 평탄화 제제를 포함하는 금속 전기 도금용 조성물
KR102647950B1 (ko) * 2017-11-20 2024-03-14 바스프 에스이 레벨링제를 포함하는 코발트 전기도금용 조성물
EP3508620B1 (en) * 2018-01-09 2021-05-19 ATOTECH Deutschland GmbH Ureylene additive, its use and a preparation method therefor
CN114450438A (zh) 2019-09-27 2022-05-06 巴斯夫欧洲公司 用于铜凸块电沉积的包含流平剂的组合物
CN114514339A (zh) 2019-09-27 2022-05-17 巴斯夫欧洲公司 用于铜凸块电沉积的包含流平剂的组合物
EP4127025B1 (en) 2020-04-03 2025-10-01 Basf Se Composition for copper bump electrodeposition comprising a polyaminoamide type leveling agent
EP3922662A1 (en) 2020-06-10 2021-12-15 Basf Se Polyalkanolamine
KR20230037553A (ko) 2020-07-13 2023-03-16 바스프 에스이 코발트 시드 상의 구리 전기도금을 위한 조성물
US20250129503A1 (en) 2021-10-01 2025-04-24 Basf Se Composition for copper electrodeposition comprising a polyaminoamide type leveling agent
EP4551742A1 (en) 2022-07-07 2025-05-14 Basf Se Use of a composition comprising a polyaminoamide type compound for copper nanotwin electrodeposition
CN120457244A (zh) 2022-12-19 2025-08-08 巴斯夫欧洲公司 用于铜纳米孪晶电沉积的组合物
WO2025026863A1 (en) 2023-08-03 2025-02-06 Basf Se Composition for copper electroplating on a metal seed
JP7787368B1 (ja) 2024-06-25 2025-12-16 Ykk株式会社 硫酸銅めっき液

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CN1506501A (zh) * 2002-11-21 2004-06-23 希普雷公司 电镀液
CN1680629A (zh) * 2004-03-09 2005-10-12 台湾积体电路制造股份有限公司 用于铜电镀的电解液及将金属电镀至电镀表面的方法
CN101416292A (zh) * 2006-02-02 2009-04-22 恩索恩公司 微电子中的铜电沉积

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WO2002103751A2 (en) * 2000-11-20 2002-12-27 Enthone Inc. Electroplating chemistry for the cu filling of submicron features of vlsi/ulsi interconnect
CN1506501A (zh) * 2002-11-21 2004-06-23 希普雷公司 电镀液
CN1680629A (zh) * 2004-03-09 2005-10-12 台湾积体电路制造股份有限公司 用于铜电镀的电解液及将金属电镀至电镀表面的方法
CN101416292A (zh) * 2006-02-02 2009-04-22 恩索恩公司 微电子中的铜电沉积

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Publication number Publication date
IL217234A (en) 2016-05-31
IL217234A0 (en) 2012-02-29
RU2012107130A (ru) 2013-09-10
RU2539895C2 (ru) 2015-01-27
MY160150A (en) 2017-02-28
EP2459779B1 (en) 2015-09-09
SG10201404301WA (en) 2014-09-26
CN102471910A (zh) 2012-05-23
EP2459779A1 (en) 2012-06-06
TWI515341B (zh) 2016-01-01
US20120118750A1 (en) 2012-05-17
JP6117284B2 (ja) 2017-04-19
TW201111558A (en) 2011-04-01
WO2011012475A1 (en) 2011-02-03
KR20120049237A (ko) 2012-05-16
SG177418A1 (en) 2012-02-28
JP2016029210A (ja) 2016-03-03
KR101738708B1 (ko) 2017-05-22
JP2013500395A (ja) 2013-01-07
JP5775077B2 (ja) 2015-09-09
US9617647B2 (en) 2017-04-11

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