KR101738708B1 - 서브미크론 특징부의 무공극 충전을 위한 억제제를 포함하는 금속 도금용 조성물 - Google Patents

서브미크론 특징부의 무공극 충전을 위한 억제제를 포함하는 금속 도금용 조성물 Download PDF

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KR101738708B1
KR101738708B1 KR1020127001758A KR20127001758A KR101738708B1 KR 101738708 B1 KR101738708 B1 KR 101738708B1 KR 1020127001758 A KR1020127001758 A KR 1020127001758A KR 20127001758 A KR20127001758 A KR 20127001758A KR 101738708 B1 KR101738708 B1 KR 101738708B1
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copper
composition
alkylene oxide
substrate
oxide
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KR20120049237A (ko
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코르넬리아 뢰거-괴페르트
로만 베네딕트 레테르
디터 마이어
알렉산드라 하크
샤를로테 엠네트
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바스프 에스이
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    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper
    • C25D3/40—Electroplating: Baths therefor from solutions of copper from cyanide baths, e.g. with Cu+

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electrochemistry (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Chemically Coating (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Polyethers (AREA)
  • Oxygen, Ozone, And Oxides In General (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Paints Or Removers (AREA)
KR1020127001758A 2009-07-30 2010-07-19 서브미크론 특징부의 무공극 충전을 위한 억제제를 포함하는 금속 도금용 조성물 Active KR101738708B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US22980909P 2009-07-30 2009-07-30
US61/229,809 2009-07-30
PCT/EP2010/060375 WO2011012475A1 (en) 2009-07-30 2010-07-19 Composition for metal plating comprising suppressing agent for void free submicron feature filling

Publications (2)

Publication Number Publication Date
KR20120049237A KR20120049237A (ko) 2012-05-16
KR101738708B1 true KR101738708B1 (ko) 2017-05-22

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KR1020127001758A Active KR101738708B1 (ko) 2009-07-30 2010-07-19 서브미크론 특징부의 무공극 충전을 위한 억제제를 포함하는 금속 도금용 조성물

Country Status (11)

Country Link
US (1) US9617647B2 (enExample)
EP (1) EP2459779B1 (enExample)
JP (2) JP5775077B2 (enExample)
KR (1) KR101738708B1 (enExample)
CN (1) CN102471910B (enExample)
IL (1) IL217234A (enExample)
MY (1) MY160150A (enExample)
RU (1) RU2539895C2 (enExample)
SG (2) SG10201404301WA (enExample)
TW (1) TWI515341B (enExample)
WO (1) WO2011012475A1 (enExample)

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MY170653A (en) 2010-12-21 2019-08-23 Basf Se Composition for metal electroplating comprising leveling agent
EP2530102A1 (en) 2011-06-01 2012-12-05 Basf Se Additive and composition for metal electroplating comprising an additive for bottom-up filling of though silicon vias
SG194983A1 (en) 2011-06-01 2013-12-30 Basf Se Composition for metal electroplating comprising an additive for bottom-up filling of though silicon vias and interconnect features
US20130133243A1 (en) 2011-06-28 2013-05-30 Basf Se Quaternized nitrogen compounds and use thereof as additives in fuels and lubricants
MY172822A (en) 2012-11-09 2019-12-12 Basf Se Composition for metal electroplating comprising leveling agent
ES2681836T3 (es) * 2015-09-10 2018-09-17 Atotech Deutschland Gmbh Composición de baño para chapado de cobre
US11926918B2 (en) * 2016-12-20 2024-03-12 Basf Se Composition for metal plating comprising suppressing agent for void free filing
CN107604414B (zh) * 2017-08-22 2020-03-24 珠海市奥美伦精细化工有限公司 一种铝及铝合金阳极氧化高温无镍封闭剂
EP3679179B1 (en) 2017-09-04 2023-10-11 Basf Se Composition for metal electroplating comprising leveling agent
JP2021503560A (ja) * 2017-11-20 2021-02-12 ビーエイエスエフ・ソシエタス・エウロパエアＢａｓｆ Ｓｅ レベリング剤を含んだコバルト電気メッキ用組成物
PT3508620T (pt) * 2018-01-09 2021-07-12 Atotech Deutschland Gmbh Aditivo de ureileno, a sua utilização e um método de preparação para esse fim
CN114450438A (zh) 2019-09-27 2022-05-06 巴斯夫欧洲公司 用于铜凸块电沉积的包含流平剂的组合物
US20220333262A1 (en) 2019-09-27 2022-10-20 Basf Se Composition for copper bump electrodeposition comprising a leveling agent
WO2021197950A1 (en) 2020-04-03 2021-10-07 Basf Se Composition for copper bump electrodeposition comprising a polyaminoamide type leveling agent
EP3922662A1 (en) 2020-06-10 2021-12-15 Basf Se Polyalkanolamine
JP7781850B2 (ja) 2020-07-13 2025-12-08 ビーエーエスエフ ソシエタス・ヨーロピア コバルトシード上の銅電気メッキ用組成物
WO2023052254A1 (en) 2021-10-01 2023-04-06 Basf Se Composition for copper electrodeposition comprising a polyaminoamide type leveling agent
KR20250036166A (ko) 2022-07-07 2025-03-13 바스프 에스이 구리 나노트윈 전착을 위한 폴리아미노아미드 유형 화합물을 포함하는 조성물의 용도
KR20250124348A (ko) 2022-12-19 2025-08-19 바스프 에스이 구리 나노트윈 전착용 조성물
WO2025026863A1 (en) 2023-08-03 2025-02-06 Basf Se Composition for copper electroplating on a metal seed
JP7787368B1 (ja) 2024-06-25 2025-12-16 Ykk株式会社 硫酸銅めっき液

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WO2002103751A2 (en) 2000-11-20 2002-12-27 Enthone Inc. Electroplating chemistry for the cu filling of submicron features of vlsi/ulsi interconnect
US20060098065A1 (en) 2002-12-03 2006-05-11 Mutsuhiro Maruyama Copper oxide ultrafine particle
US20060213780A1 (en) 2005-03-24 2006-09-28 Taiwan Semiconductor Manufacturing Co., Ltd. Electroplating composition and method

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WO2002103751A2 (en) 2000-11-20 2002-12-27 Enthone Inc. Electroplating chemistry for the cu filling of submicron features of vlsi/ulsi interconnect
US20060098065A1 (en) 2002-12-03 2006-05-11 Mutsuhiro Maruyama Copper oxide ultrafine particle
US20060213780A1 (en) 2005-03-24 2006-09-28 Taiwan Semiconductor Manufacturing Co., Ltd. Electroplating composition and method

Also Published As

Publication number Publication date
MY160150A (en) 2017-02-28
RU2012107130A (ru) 2013-09-10
CN102471910B (zh) 2016-01-20
IL217234A0 (en) 2012-02-29
RU2539895C2 (ru) 2015-01-27
WO2011012475A1 (en) 2011-02-03
SG10201404301WA (en) 2014-09-26
EP2459779A1 (en) 2012-06-06
TWI515341B (zh) 2016-01-01
CN102471910A (zh) 2012-05-23
JP5775077B2 (ja) 2015-09-09
JP2013500395A (ja) 2013-01-07
SG177418A1 (en) 2012-02-28
EP2459779B1 (en) 2015-09-09
TW201111558A (en) 2011-04-01
IL217234A (en) 2016-05-31
US20120118750A1 (en) 2012-05-17
US9617647B2 (en) 2017-04-11
KR20120049237A (ko) 2012-05-16
JP2016029210A (ja) 2016-03-03
JP6117284B2 (ja) 2017-04-19

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