TWI515341B - 包含供無空隙次微米結構特徵填充之抑制劑的金屬電鍍用組合物 - Google Patents

包含供無空隙次微米結構特徵填充之抑制劑的金屬電鍍用組合物 Download PDF

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Publication number
TWI515341B
TWI515341B TW099125505A TW99125505A TWI515341B TW I515341 B TWI515341 B TW I515341B TW 099125505 A TW099125505 A TW 099125505A TW 99125505 A TW99125505 A TW 99125505A TW I515341 B TWI515341 B TW I515341B
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TW
Taiwan
Prior art keywords
alkylene oxide
composition
copper
oxide
group
Prior art date
Application number
TW099125505A
Other languages
English (en)
Chinese (zh)
Other versions
TW201111558A (en
Inventor
康尼利亞 羅傑
羅曼 班尼狄克 瑞索
迪爾特 梅爾
亞力山佐 賀格
夏落特 伊尼特
Original Assignee
巴地斯顏料化工廠
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Filing date
Publication date
Application filed by 巴地斯顏料化工廠 filed Critical 巴地斯顏料化工廠
Publication of TW201111558A publication Critical patent/TW201111558A/zh
Application granted granted Critical
Publication of TWI515341B publication Critical patent/TWI515341B/zh

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    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00Electroplating: Baths therefor
    • C25D3/02Electroplating: Baths therefor from solutions
    • C25D3/38Electroplating: Baths therefor from solutions of copper
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00Electroplating: Baths therefor
    • C25D3/02Electroplating: Baths therefor from solutions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00Electroplating: Baths therefor
    • C25D3/02Electroplating: Baths therefor from solutions
    • C25D3/38Electroplating: Baths therefor from solutions of copper
    • C25D3/40Electroplating: Baths therefor from solutions of copper from cyanide baths, e.g. with Cu+

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electrochemistry (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Chemically Coating (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Oxygen, Ozone, And Oxides In General (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Polyethers (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Paints Or Removers (AREA)
TW099125505A 2009-07-30 2010-07-30 包含供無空隙次微米結構特徵填充之抑制劑的金屬電鍍用組合物 TWI515341B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US22980909P 2009-07-30 2009-07-30

Publications (2)

Publication Number Publication Date
TW201111558A TW201111558A (en) 2011-04-01
TWI515341B true TWI515341B (zh) 2016-01-01

Family

ID=42733749

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099125505A TWI515341B (zh) 2009-07-30 2010-07-30 包含供無空隙次微米結構特徵填充之抑制劑的金屬電鍍用組合物

Country Status (11)

Country Link
US (1) US9617647B2 (enExample)
EP (1) EP2459779B1 (enExample)
JP (2) JP5775077B2 (enExample)
KR (1) KR101738708B1 (enExample)
CN (1) CN102471910B (enExample)
IL (1) IL217234A (enExample)
MY (1) MY160150A (enExample)
RU (1) RU2539895C2 (enExample)
SG (2) SG177418A1 (enExample)
TW (1) TWI515341B (enExample)
WO (1) WO2011012475A1 (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG10201510522XA (en) 2010-12-21 2016-01-28 Basf Se Composition for metal electroplating comprising leveling agent
EP2530102A1 (en) 2011-06-01 2012-12-05 Basf Se Additive and composition for metal electroplating comprising an additive for bottom-up filling of though silicon vias
MY168658A (en) 2011-06-01 2018-11-28 Basf Se Composition for metal electroplating comprising an additive for bottom-up filling of though silicon vias and interconnect features
US20130133243A1 (en) 2011-06-28 2013-05-30 Basf Se Quaternized nitrogen compounds and use thereof as additives in fuels and lubricants
CN104797633B (zh) 2012-11-09 2018-04-24 巴斯夫欧洲公司 用于金属电镀的包含调平剂的组合物
EP3141633B1 (en) * 2015-09-10 2018-05-02 ATOTECH Deutschland GmbH Copper plating bath composition
KR102457310B1 (ko) * 2016-12-20 2022-10-20 바스프 에스이 무-보이드 충전을 위한 억제 작용제를 포함하는 금속 도금용 조성물
CN107604414B (zh) * 2017-08-22 2020-03-24 珠海市奥美伦精细化工有限公司 一种铝及铝合金阳极氧化高温无镍封闭剂
KR102641595B1 (ko) 2017-09-04 2024-02-27 바스프 에스이 평탄화 제제를 포함하는 금속 전기 도금용 조성물
JP2021503560A (ja) * 2017-11-20 2021-02-12 ビーエイエスエフ・ソシエタス・エウロパエアBasf Se レベリング剤を含んだコバルト電気メッキ用組成物
PT3508620T (pt) * 2018-01-09 2021-07-12 Atotech Deutschland Gmbh Aditivo de ureileno, a sua utilização e um método de preparação para esse fim
US20220333262A1 (en) 2019-09-27 2022-10-20 Basf Se Composition for copper bump electrodeposition comprising a leveling agent
US20220356592A1 (en) 2019-09-27 2022-11-10 Basf Se Composition for copper bump electrodeposition comprising a leveling agent
EP4127025B1 (en) 2020-04-03 2025-10-01 Basf Se Composition for copper bump electrodeposition comprising a polyaminoamide type leveling agent
EP3922662A1 (en) 2020-06-10 2021-12-15 Basf Se Polyalkanolamine
US20230265576A1 (en) 2020-07-13 2023-08-24 Basf Se Composition For Copper Electroplating On A Cobalt Seed
EP4409058B1 (en) 2021-10-01 2025-11-05 Basf Se Composition for copper electrodeposition comprising a polyaminoamide type leveling agent
EP4551742A1 (en) 2022-07-07 2025-05-14 Basf Se Use of a composition comprising a polyaminoamide type compound for copper nanotwin electrodeposition
CN120457244A (zh) 2022-12-19 2025-08-08 巴斯夫欧洲公司 用于铜纳米孪晶电沉积的组合物
WO2025026863A1 (en) 2023-08-03 2025-02-06 Basf Se Composition for copper electroplating on a metal seed

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB602591A (en) * 1945-02-12 1948-05-31 Du Pont Improvements in or relating to the electro-deposition of metals
GB1221688A (en) * 1968-03-09 1971-02-03 Geigy Uk Ltd Tin electroplating bath and process
GB2064585B (en) * 1979-11-19 1983-11-09 Enthone Acid zinc electro plating solutions and methods utilizing ethoxylated/propoxylated polyhydric alcohols
US4505839A (en) 1981-05-18 1985-03-19 Petrolite Corporation Polyalkanolamines
SU1035097A1 (ru) * 1981-07-20 1983-08-15 Днепропетровский Ордена Трудового Красного Знамени Государственный Университет Им.300-Летия Воссоединения Украины С Россией Электролит меднени
US4430490A (en) * 1982-08-10 1984-02-07 Ppg Industries, Inc. Polyether polyols and their method of preparation
JPS59182986A (ja) * 1983-04-01 1984-10-17 Keigo Obata スズ、鉛及びすず−鉛合金メツキ浴
JPS62182295A (ja) * 1985-08-07 1987-08-10 Daiwa Tokushu Kk 銅メツキ浴組成物
DE4003243A1 (de) 1990-02-03 1991-08-08 Basf Ag Verwendung von trialkanolaminpolyethern als demulgatoren von oel-in-wasser-emulsionen
JPH0641581A (ja) * 1992-07-23 1994-02-15 Seiko Epson Corp コンタクトレンズ用親水性洗浄剤
JP3244866B2 (ja) * 1993-05-25 2002-01-07 株式会社大和化成研究所 すず−鉛合金めっき浴
US6682642B2 (en) 2000-10-13 2004-01-27 Shipley Company, L.L.C. Seed repair and electroplating bath
US6776893B1 (en) 2000-11-20 2004-08-17 Enthone Inc. Electroplating chemistry for the CU filling of submicron features of VLSI/ULSI interconnect
EP1422320A1 (en) 2002-11-21 2004-05-26 Shipley Company, L.L.C. Copper electroplating bath
KR100692159B1 (ko) 2002-12-03 2007-03-12 아사히 가세이 가부시키가이샤 산화구리 초미립자
US20050133376A1 (en) * 2003-12-19 2005-06-23 Opaskar Vincent C. Alkaline zinc-nickel alloy plating compositions, processes and articles therefrom
US20050199507A1 (en) * 2004-03-09 2005-09-15 Taiwan Semiconductor Manufacturing Co., Ltd. Chemical structures and compositions of ECP additives to reduce pit defects
WO2006057873A1 (en) * 2004-11-29 2006-06-01 Technic, Inc. Near neutral ph tin electroplating solution
US20060213780A1 (en) 2005-03-24 2006-09-28 Taiwan Semiconductor Manufacturing Co., Ltd. Electroplating composition and method
RU2282682C1 (ru) * 2005-04-28 2006-08-27 Российский химико-технологический университет им. Д.И. Менделеева Электролит и способ меднения
US20070178697A1 (en) * 2006-02-02 2007-08-02 Enthone Inc. Copper electrodeposition in microelectronics
JP2008266722A (ja) * 2007-04-20 2008-11-06 Ebara Udylite Kk パルス銅めっき浴用添加剤およびこれを用いたパルス銅めっき浴
US9869029B2 (en) * 2009-07-30 2018-01-16 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling

Also Published As

Publication number Publication date
WO2011012475A1 (en) 2011-02-03
IL217234A (en) 2016-05-31
RU2012107130A (ru) 2013-09-10
US20120118750A1 (en) 2012-05-17
RU2539895C2 (ru) 2015-01-27
CN102471910B (zh) 2016-01-20
TW201111558A (en) 2011-04-01
IL217234A0 (en) 2012-02-29
JP2016029210A (ja) 2016-03-03
KR101738708B1 (ko) 2017-05-22
MY160150A (en) 2017-02-28
SG10201404301WA (en) 2014-09-26
JP2013500395A (ja) 2013-01-07
SG177418A1 (en) 2012-02-28
JP6117284B2 (ja) 2017-04-19
CN102471910A (zh) 2012-05-23
EP2459779B1 (en) 2015-09-09
KR20120049237A (ko) 2012-05-16
EP2459779A1 (en) 2012-06-06
JP5775077B2 (ja) 2015-09-09
US9617647B2 (en) 2017-04-11

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