CN102468172A - 半导体器件制造方法 - Google Patents
半导体器件制造方法 Download PDFInfo
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- CN102468172A CN102468172A CN2010105434583A CN201010543458A CN102468172A CN 102468172 A CN102468172 A CN 102468172A CN 2010105434583 A CN2010105434583 A CN 2010105434583A CN 201010543458 A CN201010543458 A CN 201010543458A CN 102468172 A CN102468172 A CN 102468172A
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CN201010543458.3A CN102468172B (zh) | 2010-11-12 | 2010-11-12 | 半导体器件制造方法 |
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CN201010543458.3A CN102468172B (zh) | 2010-11-12 | 2010-11-12 | 半导体器件制造方法 |
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CN102468172A true CN102468172A (zh) | 2012-05-23 |
CN102468172B CN102468172B (zh) | 2015-05-20 |
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103972147A (zh) * | 2014-05-08 | 2014-08-06 | 上海华力微电子有限公司 | 一种窄沟槽制作方法 |
CN104241131A (zh) * | 2013-06-09 | 2014-12-24 | 中芯国际集成电路制造(上海)有限公司 | 金属栅极晶体管的形成方法 |
CN107437525A (zh) * | 2016-05-25 | 2017-12-05 | 世界先进积体电路股份有限公司 | 半导体装置及其形成方法 |
CN110473781A (zh) * | 2019-08-13 | 2019-11-19 | 上海华力集成电路制造有限公司 | 镍硅化物的制造方法 |
CN114242656A (zh) * | 2021-12-20 | 2022-03-25 | 上海功成半导体科技有限公司 | P型mosfet器件及其制备方法 |
CN116314234A (zh) * | 2023-05-19 | 2023-06-23 | 合肥晶合集成电路股份有限公司 | 半导体器件的制作方法以及cmos图像传感器 |
Citations (9)
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US6077750A (en) * | 1998-10-27 | 2000-06-20 | Lg Semicon Co., Ltd. | Method for forming epitaxial Co self-align silicide for semiconductor device |
CN1716561A (zh) * | 2004-06-30 | 2006-01-04 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件的制造方法 |
CN1889246A (zh) * | 2005-06-29 | 2007-01-03 | 上海华虹Nec电子有限公司 | Sti的填充方法 |
US20070166936A1 (en) * | 2006-01-19 | 2007-07-19 | Po-Chao Tsao | Pre-amorphization implantation process and salicide process |
CN101159237A (zh) * | 2006-10-08 | 2008-04-09 | 上海华虹Nec电子有限公司 | 改善高压栅氧均匀性的预非晶化离子注入工艺 |
US20080132023A1 (en) * | 2006-11-30 | 2008-06-05 | United Microelectronics Corp. | Semiconductor process |
CN101350308A (zh) * | 2007-07-17 | 2009-01-21 | 台湾积体电路制造股份有限公司 | 金氧半导体场效应电晶体及源/漏极区中降低损坏的方法 |
CN101777510A (zh) * | 2009-01-09 | 2010-07-14 | 中芯国际集成电路制造(上海)有限公司 | 修复浅沟道隔离槽边角损伤的方法 |
CN101783312A (zh) * | 2009-01-19 | 2010-07-21 | 中芯国际集成电路制造(上海)有限公司 | 浅沟槽隔离结构的制造方法 |
-
2010
- 2010-11-12 CN CN201010543458.3A patent/CN102468172B/zh active Active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6077750A (en) * | 1998-10-27 | 2000-06-20 | Lg Semicon Co., Ltd. | Method for forming epitaxial Co self-align silicide for semiconductor device |
CN1716561A (zh) * | 2004-06-30 | 2006-01-04 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件的制造方法 |
CN1889246A (zh) * | 2005-06-29 | 2007-01-03 | 上海华虹Nec电子有限公司 | Sti的填充方法 |
US20070166936A1 (en) * | 2006-01-19 | 2007-07-19 | Po-Chao Tsao | Pre-amorphization implantation process and salicide process |
CN101159237A (zh) * | 2006-10-08 | 2008-04-09 | 上海华虹Nec电子有限公司 | 改善高压栅氧均匀性的预非晶化离子注入工艺 |
US20080132023A1 (en) * | 2006-11-30 | 2008-06-05 | United Microelectronics Corp. | Semiconductor process |
CN101350308A (zh) * | 2007-07-17 | 2009-01-21 | 台湾积体电路制造股份有限公司 | 金氧半导体场效应电晶体及源/漏极区中降低损坏的方法 |
CN101777510A (zh) * | 2009-01-09 | 2010-07-14 | 中芯国际集成电路制造(上海)有限公司 | 修复浅沟道隔离槽边角损伤的方法 |
CN101783312A (zh) * | 2009-01-19 | 2010-07-21 | 中芯国际集成电路制造(上海)有限公司 | 浅沟槽隔离结构的制造方法 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104241131A (zh) * | 2013-06-09 | 2014-12-24 | 中芯国际集成电路制造(上海)有限公司 | 金属栅极晶体管的形成方法 |
CN103972147A (zh) * | 2014-05-08 | 2014-08-06 | 上海华力微电子有限公司 | 一种窄沟槽制作方法 |
CN107437525A (zh) * | 2016-05-25 | 2017-12-05 | 世界先进积体电路股份有限公司 | 半导体装置及其形成方法 |
CN110473781A (zh) * | 2019-08-13 | 2019-11-19 | 上海华力集成电路制造有限公司 | 镍硅化物的制造方法 |
US11069532B2 (en) | 2019-08-13 | 2021-07-20 | Shanghai Huali Integrated Circuit Corporation | Method for manufacturing nickel silicide |
CN114242656A (zh) * | 2021-12-20 | 2022-03-25 | 上海功成半导体科技有限公司 | P型mosfet器件及其制备方法 |
CN116314234A (zh) * | 2023-05-19 | 2023-06-23 | 合肥晶合集成电路股份有限公司 | 半导体器件的制作方法以及cmos图像传感器 |
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CN102468172B (zh) | 2015-05-20 |
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