CN102449746A - 蚀刻液及用其形成沟槽隔离结构的方法 - Google Patents
蚀刻液及用其形成沟槽隔离结构的方法 Download PDFInfo
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- CN102449746A CN102449746A CN2010800229608A CN201080022960A CN102449746A CN 102449746 A CN102449746 A CN 102449746A CN 2010800229608 A CN2010800229608 A CN 2010800229608A CN 201080022960 A CN201080022960 A CN 201080022960A CN 102449746 A CN102449746 A CN 102449746A
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- organic solvent
- etching solution
- isolation structure
- insulating barrier
- substrate
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
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- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02219—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
- H01L21/02222—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen the compound being a silazane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
- H01L21/02323—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of oxygen
- H01L21/02326—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of oxygen into a nitride layer, e.g. changing SiN to SiON
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
- H01L21/76229—Concurrent filling of a plurality of trenches having a different trench shape or dimension, e.g. rectangular and V-shaped trenches, wide and narrow trenches, shallow and deep trenches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
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- Element Separation (AREA)
- Weting (AREA)
- Formation Of Insulating Films (AREA)
Abstract
Description
δH | 饱和溶解度 | |
乙醛 | 7.9 | 任意 |
丙酮 | 7.0 | 任意 |
乙酰丙酮 | 6.2 | 16.0wt% |
乙酰乙酸烯丙基酯 | 8.6 | 5.0wt% |
丁酸 | 10.6 | 任意 |
巴豆酸 | 12.0 | 9.4wt% |
二乙醚 | 5.1 | 6.9wt% |
二乙基酮 | 4.7 | 5.0wt% |
乙二醇丁醚乙酸二乙酯 | 8.2 | 6.5wt% |
二乙基乙二醇一丁醚 | 10.6 | 6.5wt% |
二甲氧基甲烷 | 8.6 | 32.3wt% |
二甲基二酮 | 11.7 | 20.0wt% |
二甲醚 | 5.7 | 32.8wt% |
二丙二醇单甲醚乙酸酯 | 8.0 | 12.0wt% |
乙酸乙酯 | 7.2 | 8.0wt% |
乙酰乙酸乙酯 | 8.3 | 11.6wt% |
乙二醇二甲醚 | 6.0 | 任意 |
乙二醇单乙醚乙酸酯 | 10.6 | 23.0wt% |
乙二醇单甲醚乙酸酯 | 11.6 | 任意 |
异丁酸 | 11.1 | 21.0wt% |
甲基丙烯酸 | 10.2 | 9.7wt% |
乙酸甲酯 | 7.6 | 25.0wt% |
乙酰乙酸甲酯 | 8.9 | 46.0wt% |
甲乙醚 | 6.2 | 5.0wt%或更高 |
甲基乙基酮 | 5.1 | 27.5wt% |
甲酸甲酯 | 10.2 | 10.2wt% |
丙酮醛 | 9.7 | 40.0wt%或更高 |
戊二酸二甲酯 | 8.4 | 5.3wt% |
2,4-戊二酮 | 4.1 | 12.0wt% |
丙醛 | 6.9 | 20.0wt% |
丙二醇单乙醚 | 10.5 | 任意 |
丙二醇单乙醚乙酸酯 | 9.0 | 5.0wt%或更高 |
丙二醇单甲醚 | 11.6 | 任意 |
丙二醇单甲醚乙酸酯 | 9.8 | 19.0wt% |
三丙二醇单甲醚 | 10.4 | 任意 |
Claims (8)
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JP2009125539 | 2009-05-25 | ||
JP2009-125539 | 2009-05-25 | ||
JP2009-255960 | 2009-11-09 | ||
JP2009255960A JP5535583B2 (ja) | 2009-05-25 | 2009-11-09 | トレンチ・アイソレーション構造の形成方法 |
PCT/JP2010/058711 WO2010137544A1 (ja) | 2009-05-25 | 2010-05-24 | エッチング液およびそれを用いたトレンチ・アイソレーション構造の形成方法 |
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US (1) | US8828877B2 (zh) |
EP (1) | EP2437283B1 (zh) |
JP (1) | JP5535583B2 (zh) |
KR (1) | KR101624378B1 (zh) |
CN (1) | CN102449746B (zh) |
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CN105118775A (zh) * | 2015-08-18 | 2015-12-02 | 上海华虹宏力半导体制造有限公司 | 屏蔽栅晶体管形成方法 |
CN107799427A (zh) * | 2016-09-05 | 2018-03-13 | 达兴材料股份有限公司 | 光电元件的制备方法 |
CN109841511A (zh) * | 2017-11-24 | 2019-06-04 | 东友精细化工有限公司 | 绝缘层蚀刻剂组合物和使用其形成图案的方法 |
CN114988710A (zh) * | 2022-05-17 | 2022-09-02 | 北方夜视科技(南京)研究院有限公司 | 采用有机油溶剂保护的利用酸溶剂刻蚀获得具有大开口面积比的喇叭口状的mcp的方法 |
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JP5548225B2 (ja) * | 2012-03-16 | 2014-07-16 | 富士フイルム株式会社 | 半導体基板製品の製造方法及びエッチング液 |
US20150093545A1 (en) * | 2013-10-01 | 2015-04-02 | Samsung Sdi Co., Ltd. | Composition for a silica based layer, silica based layer, and method of manufacturing a silica based layer |
JP6054856B2 (ja) * | 2013-12-25 | 2016-12-27 | 東京エレクトロン株式会社 | 絶縁領域の形成方法 |
US10020185B2 (en) | 2014-10-07 | 2018-07-10 | Samsung Sdi Co., Ltd. | Composition for forming silica layer, silica layer, and electronic device |
KR101833800B1 (ko) | 2014-12-19 | 2018-03-02 | 삼성에스디아이 주식회사 | 실리카계 막 형성용 조성물, 실리카계 막의 제조방법 및 상기 실리카계 막을 포함하는 전자 소자 |
KR101837971B1 (ko) | 2014-12-19 | 2018-03-13 | 삼성에스디아이 주식회사 | 실리카계 막 형성용 조성물, 실리카계 막, 및 전자 디바이스 |
KR20170014946A (ko) | 2015-07-31 | 2017-02-08 | 삼성에스디아이 주식회사 | 실리카 막 형성용 조성물, 실리카 막의 제조방법 및 실리카 막 |
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CN105118775A (zh) * | 2015-08-18 | 2015-12-02 | 上海华虹宏力半导体制造有限公司 | 屏蔽栅晶体管形成方法 |
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CN109841511A (zh) * | 2017-11-24 | 2019-06-04 | 东友精细化工有限公司 | 绝缘层蚀刻剂组合物和使用其形成图案的方法 |
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CN114988710A (zh) * | 2022-05-17 | 2022-09-02 | 北方夜视科技(南京)研究院有限公司 | 采用有机油溶剂保护的利用酸溶剂刻蚀获得具有大开口面积比的喇叭口状的mcp的方法 |
CN114988710B (zh) * | 2022-05-17 | 2023-08-29 | 北方夜视科技(南京)研究院有限公司 | 采用有机油溶剂保护的利用酸溶剂刻蚀获得具有大开口面积比的喇叭口状的mcp的方法 |
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WO2010137544A1 (ja) | 2010-12-02 |
SG175799A1 (en) | 2011-12-29 |
JP5535583B2 (ja) | 2014-07-02 |
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US8828877B2 (en) | 2014-09-09 |
KR20120036878A (ko) | 2012-04-18 |
EP2437283A4 (en) | 2014-05-07 |
EP2437283B1 (en) | 2017-09-20 |
TWI555883B (zh) | 2016-11-01 |
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