JP2011009685A - エッチング液およびそれを用いたトレンチ・アイソレーション構造の形成方法 - Google Patents
エッチング液およびそれを用いたトレンチ・アイソレーション構造の形成方法 Download PDFInfo
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- JP2011009685A JP2011009685A JP2009255960A JP2009255960A JP2011009685A JP 2011009685 A JP2011009685 A JP 2011009685A JP 2009255960 A JP2009255960 A JP 2009255960A JP 2009255960 A JP2009255960 A JP 2009255960A JP 2011009685 A JP2011009685 A JP 2011009685A
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- organic solvent
- etching solution
- etching
- isolation structure
- trench isolation
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02219—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
- H01L21/02222—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen the compound being a silazane
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
- H01L21/02323—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of oxygen
- H01L21/02326—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of oxygen into a nitride layer, e.g. changing SiN to SiON
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
- H01L21/76229—Concurrent filling of a plurality of trenches having a different trench shape or dimension, e.g. rectangular and V-shaped trenches, wide and narrow trenches, shallow and deep trenches
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
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Abstract
【解決手段】フッ酸と有機溶媒とを含んでなるエッチング液。前記有機溶媒の、ハンセンの溶解度パラメーターによって定義されるδHは4以上12以下であり、20℃の水に対する飽和溶解度が5%以上である。このエッチング液は、従来の半導体素子形成プロセスに用いられるエッチング液の代わりに用いることができる。
【選択図】図1
Description
トレンチ構造を有する基板表面に絶縁材料を含む組成物を塗布して塗膜を形成させる塗布工程、
塗布済みの基板を焼成して、絶縁材料を硬化させ、絶縁膜を形成させる焼成工程、
研磨後の絶縁膜を、フッ酸と有機溶媒とを含んでなり、前記有機溶媒の、ハンセンの溶解度パラメーターによって定義されるδHが4以上12以下であり、20℃の水に対する飽和溶解度が5%以上であるエッチング液で処理するエッチング工程
を含んでなることを特徴とするものである。
このうち、特に好ましいものとしてスチレン換算重量平均分子量が700〜30,000であるものが好ましい。
(a)芳香族化合物、例えば、ベンゼン、トルエン、キシレン、エチルベンゼン、ジエチルベンゼン、トリメチルベンゼン、トリエチルベンゼン等、(b)飽和炭化水素化合物、例えばn−ペンタン、i−ペンタン、n−ヘキサン、i−ヘキサン、n−ヘプタン、i−ヘプタン、n−オクタン、i−オクタン、n−ノナン、i−ノナン、n−デカン、i−デカン等、(c)脂環式炭化水素化合物、例えばエチルシクロヘキサン、メチルシクロヘキサン、シクロヘキサン、シクロヘキセン、p−メンタン、デカヒドロナフタレン、ジペンテン、リモネン等、(d)エーテル類、例えばジプロピルエーテル、ジブチルエーテル、ジエチルエーテル、メチルターシャリーブチルエーテル(以下、MTBEという)、アニソール等、および(e)ケトン類、例えばメチルイソブチルケトン(以下、MIBKという)等。これらのうち、(b)飽和炭化水素化合物、(c)脂環式炭化水素化合物(d)エーテル類、および(e)ケトン類がより好ましい。
必要に応じて硬化温度または硬化雰囲気の組成を段階的に変化させることもできる。
基板表面に形成された絶縁膜のトレンチ内側側面に接触している部分は、引っ張り応力が強いため、エッチングされやすい傾向にある。そのため、トレンチ内側側面に近い部分におけるエッチング速度が速くなり、図2(e)に示されるように、トレンチ内部の中央部が盛り上がる。
まず、表面にトレンチ構造を有するシリコン基板を準備した。そのトレンチの幅は80nm、190nm、および1800nmであり、深さは540nmであった。
PGMEAはプロピレングリコールモノメチルエーテルアセテート、
PGMEはプロピレングリコールモノメチルエーテル、
EAAはエチルアセトアセテート、
MEKはメチルエチルケトン、
EGMEAはエチレングリコールモノメチルエーテルアセテート、
CAはクロトン酸、
PDは2,4−ペンタンジオン、
IPAはイソプロパノールを表す。
また、膜形状は、起伏高さが57nm未満をA(優れる)、57nm以上76nm未満をB(良好)、76nm以上をC(劣る)とした。
2 回路
3 キャップ
4 絶縁膜
Claims (8)
- フッ酸と有機溶媒とを含んでなり、前記有機溶媒の、ハンセンの溶解度パラメーターによって定義されるδHが4以上12以下であり、20℃の水に対する飽和溶解度が5重量%以上のものであることを特徴とするエッチング液。
- 前記エッチング液の総重量を基準とした前記フッ酸の含有率が0.06〜2重量%である、請求項1に記載のエッチング液。
- 前記有機溶媒が、プロピレングリコールモノメチルエーテル、プロピレングリコールモノメチルエーテルアセテート、およびエチルアセトアセテートからなる群から選択される、請求項1または2に記載のエッチング液。
- 前記エッチング液の総重量を基準とした前記有機溶媒の含有率が1重量%以上である、請求項1〜3のいずれか1項に記載のエッチング液。
- トレンチ構造を有する基板表面に絶縁材料を含む組成物を塗布して塗膜を形成させる塗布工程、
塗布済みの基板を焼成して、絶縁材料を硬化させ、絶縁膜を形成させる焼成工程、
研磨後の絶縁膜を、フッ酸と有機溶媒とを含んでなり、前記有機溶媒の、ハンセンの溶解度パラメーターによって定義されるδHが4以上12以下であり、20℃の水に対する飽和溶解度が5%以上であるエッチング液で処理するエッチング工程
を含んでなることを特徴とするシャロー・トレンチ・アイソレーション構造の形成方法。 - 前記絶縁材料がポリシラザン化合物であり、前記絶縁膜がシリカ質膜である、請求項5に記載のシャロー・トレンチ・アイソレーション構造の形成方法。
- 焼成工程の後、基板上に形成された絶縁膜を研磨する研磨工程をさらに含んでなる、請求項5または6に記載のシャロー・トレンチ・アイソレーション構造の形成方法。
- 研磨を化学的機械的研磨により行う、請求項7に記載のシャロー・トレンチ・アイソレーション構造の形成方法。
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EP10780499.9A EP2437283B1 (en) | 2009-05-25 | 2010-05-24 | Method for forming trench isolation structure |
US13/320,833 US8828877B2 (en) | 2009-05-25 | 2010-05-24 | Etching solution and trench isolation structure-formation process employing the same |
PCT/JP2010/058711 WO2010137544A1 (ja) | 2009-05-25 | 2010-05-24 | エッチング液およびそれを用いたトレンチ・アイソレーション構造の形成方法 |
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