CN102437191B - 低栅漏电容的沟槽mos器件及其制造方法 - Google Patents
低栅漏电容的沟槽mos器件及其制造方法 Download PDFInfo
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- CN102437191B CN102437191B CN201110399926.9A CN201110399926A CN102437191B CN 102437191 B CN102437191 B CN 102437191B CN 201110399926 A CN201110399926 A CN 201110399926A CN 102437191 B CN102437191 B CN 102437191B
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 13
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 13
- 239000010703 silicon Substances 0.000 title claims abstract description 13
- 238000004519 manufacturing process Methods 0.000 title abstract description 12
- 229910044991 metal oxide Inorganic materials 0.000 title abstract 2
- 150000004706 metal oxides Chemical class 0.000 title abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 68
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 58
- 229920005591 polysilicon Polymers 0.000 claims abstract description 43
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 29
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 29
- 239000010410 layer Substances 0.000 claims description 142
- 229910052751 metal Inorganic materials 0.000 claims description 29
- 239000002184 metal Substances 0.000 claims description 29
- 239000011229 interlayer Substances 0.000 claims description 18
- 230000005611 electricity Effects 0.000 claims description 7
- 238000002955 isolation Methods 0.000 claims description 7
- 210000000481 breast Anatomy 0.000 claims description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract description 35
- 230000003071 parasitic effect Effects 0.000 abstract description 9
- 230000002401 inhibitory effect Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 description 39
- 238000001312 dry etching Methods 0.000 description 18
- 229910052581 Si3N4 Inorganic materials 0.000 description 17
- 230000004224 protection Effects 0.000 description 17
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 17
- 238000005530 etching Methods 0.000 description 14
- 150000001875 compounds Chemical class 0.000 description 10
- 230000008021 deposition Effects 0.000 description 8
- 238000001259 photo etching Methods 0.000 description 8
- 238000001039 wet etching Methods 0.000 description 8
- 238000002513 implantation Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 6
- 238000000137 annealing Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- 235000006508 Nelumbo nucifera Nutrition 0.000 description 3
- 240000002853 Nelumbo nucifera Species 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229910004205 SiNX Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
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- 229910052719 titanium Inorganic materials 0.000 description 2
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CN201110399926.9A CN102437191B (zh) | 2011-12-06 | 2011-12-06 | 低栅漏电容的沟槽mos器件及其制造方法 |
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CN201110399926.9A CN102437191B (zh) | 2011-12-06 | 2011-12-06 | 低栅漏电容的沟槽mos器件及其制造方法 |
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CN102437191A CN102437191A (zh) | 2012-05-02 |
CN102437191B true CN102437191B (zh) | 2014-01-15 |
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Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
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TW201409578A (zh) * | 2012-08-17 | 2014-03-01 | Anpec Electronics Corp | 具有低米勒電容之半導體元件的製作方法 |
CN105092898B (zh) * | 2014-05-04 | 2018-03-09 | 中芯国际集成电路制造(北京)有限公司 | 半导体检测结构及形成方法、检测方法 |
CN106876450B (zh) * | 2017-03-06 | 2023-08-29 | 济南安海半导体有限公司 | 低栅漏电容的纵向场效应晶体管及其制造方法 |
CN107908881A (zh) * | 2017-11-18 | 2018-04-13 | 兰州理工大学 | 一种纳米氮化硅微球体抗压性能的模拟测试方法 |
CN114023648B (zh) * | 2021-10-18 | 2023-08-22 | 上海华虹宏力半导体制造有限公司 | 沟槽栅半导体器件的制造方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102006007096B4 (de) * | 2006-02-15 | 2008-07-17 | Infineon Technologies Austria Ag | MOSFET mit Kompensationsstruktur und Randabschluss sowie Verfahren zu dessen Herstellung |
CN102169896A (zh) * | 2010-02-26 | 2011-08-31 | 苏州东微半导体有限公司 | 一种沟槽型功率mos晶体管的制造方法 |
CN202473929U (zh) * | 2011-12-06 | 2012-10-03 | 苏州硅能半导体科技股份有限公司 | 低栅漏电容的沟槽mos器件 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
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GB0407012D0 (en) * | 2004-03-27 | 2004-04-28 | Koninkl Philips Electronics Nv | Trench insulated gate field effect transistor |
JP4817827B2 (ja) * | 2005-12-09 | 2011-11-16 | 株式会社東芝 | 半導体装置 |
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102006007096B4 (de) * | 2006-02-15 | 2008-07-17 | Infineon Technologies Austria Ag | MOSFET mit Kompensationsstruktur und Randabschluss sowie Verfahren zu dessen Herstellung |
CN102169896A (zh) * | 2010-02-26 | 2011-08-31 | 苏州东微半导体有限公司 | 一种沟槽型功率mos晶体管的制造方法 |
CN202473929U (zh) * | 2011-12-06 | 2012-10-03 | 苏州硅能半导体科技股份有限公司 | 低栅漏电容的沟槽mos器件 |
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