CN102428577A - 异质结iii-v光伏电池制造 - Google Patents

异质结iii-v光伏电池制造 Download PDF

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CN102428577A
CN102428577A CN2010800211657A CN201080021165A CN102428577A CN 102428577 A CN102428577 A CN 102428577A CN 2010800211657 A CN2010800211657 A CN 2010800211657A CN 201080021165 A CN201080021165 A CN 201080021165A CN 102428577 A CN102428577 A CN 102428577A
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amorphous silicon
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S·W·比德尔
N·索萨·科尔茨
K·E·福格尔
D·萨达纳
G·沙希迪
D·沙尔耶迪
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Core Usa Second LLC
GlobalFoundries Inc
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Abstract

本公开涉及一种用于形成异质结III-V光伏(PV)电池的方法，所述方法包括：执行基础层从III-V衬底的晶片的层转移，所述基础层的厚度小于约20微米；在所述基础层上形成本征层；在所述本征层上形成非晶硅层；以及在所述非晶硅层上形成透明导电氧化物层。本公开还涉及一种异质结III-V光伏(PV)电池，所述PV电池包括：包括III-V衬底的基础层，所述基础层的厚度小于约20微米；位于所述基础层上的本征层；位于所述本征层上的非晶硅层；以及位于所述非晶硅层上的透明导电氧化物层。

Description

异质结III-V光伏电池制造
相关申请的交叉引用
本申请要求2009年6月9日提交的美国临时申请No.61/185,247的权益。本申请还涉及代理案卷号YOR920100058US1、YOR920100060US1、FIS920100005US1以及FIS920100006US1，其中的每一个都被转让给国际商务机器公司(IBM)并且与本申请是同一天提交的，其中上述申请全都在这里引入作为参考。
技术领域
本公开一般涉及异质结光伏电池制造领域。
背景技术
基于硅(Si)的异质结本征薄层(HIT)光伏(PV)电池有可能包括加在两个非晶硅层(a-Si)之间的庞大的单晶硅(sc-Si)基础层。与只包含sc-Si的电池相比，通过在HIT电池中使用a-Si层，可以为HIT电池给予更宽的能带隙。此外，a-Si层还在a-Si与sc-Si基础层之间的接口上创建了使少数载流子不断远离该接口的能障，由此减小电池中的复合率。此外，还可以以相对低的温度处理a-Si。HIT电池结构可以具有范围在数十微米(μm)内的sc-Si衬底厚度。这个衬底厚度小于PV电池中的少数载流子的扩散长度，同时这个衬底厚度足以允许最大限度地吸收太阳光谱。
发明内容
在一个方面，提供了一种用于形成异质结III-V光伏(PV)电池的方法，所述方法包括：执行基础层从III-V衬底的晶片的层转移，所述基础层的厚度小于约20微米；在所述基础层上形成本征层；在所述本征层上形成非晶硅层；以及在所述非晶硅层上形成透明导电氧化物层。
在一个方面，提供了一种异质结III-V光伏(PV)电池，包括：包括III-V衬底的基础层，所述基础层的厚度小于约20微米；位于所述基础层上的本征层；位于所述本征层上的非晶硅层；以及位于所述非晶硅层上的透明导电氧化物层。
附加特征是通过本例示实施例的技术实现的。在这里还详细描述了其他实施例，并且将这些实施例视为要求保护的内容的一部分。为了更好地理解例示实施例的特征，在这里将会参考说明书和附图。
附图说明
现在将参考附图，其中相同的部件在若干个图中具有相同的附图标记：
图1示出的是借助剥离(spalling)形成单异质结III-V PV电池的方法的实施例。
图2示出的是具有背场(back surface field)、金属层和柔性衬底层的衬底的实施例。
图3示出的是使用柔性衬底层的剥离的实施例。
图4示出的是单异质结II-V PV电池的实施例。
图5示出的是借助剥离形成双异质结III-V电池的方法的实施例。
图6示出的是具有本征层、背场、非晶硅层、金属层以及柔性衬底层的衬底的实施例。
图7示出的是使用柔性衬底层的剥离的实施例。
图8示出的是双异质结III-V PV电池的实施例。
具体实施方式
在这里提供了用于制造异质结(HJ)III-V PV电池的系统和方法的实施例，并且在下文中详细论述了例示实施例。HJ太阳能电池可以使用基础层来形成，所述基础层包含基于III-V的衬底，诸如锗(Ge)或砷化镓(GaAs)，以此来取代sc-Si。在基于III-V的衬底中，与衬底厚度相比，少数载流子的扩散长度相对小。与sc-Si不同，由于其直接能带隙，基于III-V的衬底的相对薄的层(厚度为几微米)能够有效吸收大部分太阳光谱。在一些实施例中，HJ III-V PV电池结构包括基础层，该基础层包括厚度小于约20微米的III-V衬底。通过在基础层的一侧淀积a-Si，可以形成单HJ电池，并且通过将a-Si淀积在基础层的两侧，可以形成双HJ电池。HJ III-V PV电池相对较轻和/或柔软，由此允许在不同的应用中使用HJ III-V PV电池。
形成基于III-V的衬底的相对薄的基础层可以用任何恰当的层转移方法来实现，所述方法包括智能切割层转移、外延层转移或剥离。智能切割层转移适合形成用于单HJ电池的基础层。智能切割层转移包括：将氢(H)注入III-V衬底中，接着进行退火，以便在注入了H的区域内部引入断裂，之后其将会进入到衬底中。但是，对于产生厚度超出几微米的层，智能切割层转移存在一些限制。智能切割层转移需要相对高的注入能量，而这往往会很昂贵。此外，使用高注入能量有可能导致在薄膜内产生注入损伤，从而导致薄膜的晶体质量下降，而这将会严重降低电池性能。智能切割层转移不适合双HJ电池，这是因为在层转移之前在衬底上形成的a-Si经受不住相对高的退火温度。外延层转移适合于形成单和双HJ电池二者，并且包括在衬底内的基础层之下生长牺牲层。该牺牲层是用湿法化学蚀刻移除的，以便从衬底中释放相对薄的基础层。最后，剥离提供了相对廉价且温度较低的用于将衬底与相对薄的基础层分离的方法。剥离的低温特性允许将其用在制造单和双HJ III-V电池中。
图1示出的是借助剥离形成单异质结III-V PV电池的方法100的实施例。图1是参考图2-4论述的。在方框101，如图2所示，在III-V衬底201的晶片上形成可选的背场(BSF)202。在一些实施例中，衬底201可以包括锗(Ge)和/或砷化镓(GaAs)。衬底201可以包括n型或p型衬底。在一些实施例中，通过在衬底201上淀积掺杂层以及将掺杂剂扩散到衬底201中，可以形成可选的BSF 202，或者可选的BSF 202可以包括局部的后部触点。在一些实施例中，用于形成可选的BSF 202的掺杂剂可以包括锌(Zn)、铟(In)或铝(Al)。作为替换，可选的BSF 202可以包括直接淀积在衬底201上的另一种材料；与衬底201相比，BSF材料可以具有更宽的能带隙。关于恰当的BSF材料的一些示例可以包括InGaP(用于Ge衬底)或AlGaAs(用于GaAs衬底)。
在方框102，如图2所示形成了受到张应力的金属层203，并且在金属层203上粘附了柔性衬底层204。在不包括可选的BSF 202的实施例中，金属层203是直接形成在衬底201上的。在一些实施例中，金属层203可以包括镍(Ni)。柔性衬底层204可以包括柔性粘合剂，并且在一些实施例中，所述柔性粘合剂可以是水溶性的。如果将刚性材料用于柔性衬底层204，那么有可能导致断裂剥离模式无法工作。因此，柔性衬底层204还可以包括曲率半径在一些实施例中小于5米的材料，而在一些实施例中材料的曲率半径小于1米。
在方框103，如图3所示，基础层301被从衬底201上剥离。柔性衬底204则被用于使金属层203中的张应力在衬底201中形成断裂302，由此将基础层301与衬底201分离。基础层301与衬底201包含的是相同材料，并且在一些实施例中，基础层的厚度可以小于约20μm。基础层301的厚度由金属层203的张应力和厚度确定。在包含可选的BSF 202的实施例中，可选的BSF 202会与基础层301一起从衬底201上剥离。在方框104，柔性衬底层204将被从金属层203移除。
在方框105，如图4所示，单HJ III-V PV电池400是用基础层301形成的。单HJ III-V电池400包括可选的BSF 202；但在一些实施例中，基础层301可以直接位于金属层203上，并且可选的BSF 202可以不存在。金属层203可以包括用于单HJ III-V电池400的后部触点(back contact)。在基础层301上形成本征层401，在本征层401上则形成a-Si层402，以及在非晶硅层402上形成透明导电氧化物(TCO)层403。a-Si层402可以具有与衬底201的掺杂类型相反的掺杂类型(n型或p型)；在此类实施例中，a-Si层402被配置成充当HJ III-V电池400的发射极。在一些实施例中，a-Si层402被配置成充当可以在剥离前而不是剥离后在衬底201或BSF 202上形成的发射极。在一些实施例中，TCO层403可以包括掺铝(Al)的氧化锌(ZnO)。在一些实施例中，在TCO层403上可以形成指状条(finger bar)或汇流条(bus bar)(未显示)。
虽然关于单HJ III-V PV电池400的一些实施例可以包括通过剥离形成的基础层301，但是电池400的其他实施例可以包括用智能切割或外延层转移形成的基础层301。在使用智能切割或外延层转移方法的实施例中，在衬底201上可以可选地形成被配置成充当发射极的BSF 202和/或a-Si层402，然后则可以使用智能切割或外延层转移来将基础层301与衬底201分离。然后，通过使用基础层301以及在上文中对照方框105论述的相同方法，可以形成单HJ III-V电池400。
图5示出的是借助剥离形成双异质结III-V PV电池的方法500的实施例。图5是参考图6-8论述的。在方框501，如图6所示，在III-V衬底201的晶片上形成本征层602。在一些实施例中，衬底601可以包括Ge和/或GaAs。衬底601可以包括n型或p型衬底。在一些实施例中，在本征层602上可以形成可选的BSF 603。可选的BSF603可以包括能带隙比衬底601的能带隙更宽的材料。关于恰当的BSF材料的一些示例可以包括InGaP(用于Ge衬底)或AlGaAs(用于GaAs衬底)。然后，在不包含可选的BSF 603的实施例中，在本征层602上形成a-Si层604；在此类实施例中，a-Si层604和本征层602可以一起充当背场。在包含可选的BSF 603的实施例中，在可选的BSF603上形成a-Si层604。a-Si层604可以包括与衬底601的掺杂类型相同的掺杂类型(n型或p型)；在此类实施例中，a-Si层604可以充当BSF。作为替换，a-Si层604可以包括与衬底601的掺杂类型相反的掺杂类型；在此类实施例中，a-Si层604可以充当发射极。
在方框502中，如图6所示，在a-Si层604上形成受到张应力的金属层605，并且在金属层605上粘附柔性衬底层606。在一些实施例中，金属层605可以包括镍(Ni)。柔性衬底层606可以包括柔性粘合剂，在一些实施例中，所述柔性粘合剂可以是水溶性的。如果将刚性材料用于柔性衬底层606，那么有可能导致断裂剥离模式无法工作。因此，柔性衬底层606还可以包括在一些实施例中曲率半径小于5米的材料，并且在一些例示实施例中材料的曲率半径小于1米。
在方框503，如图7所示，基础层701从衬底601上被剥离。柔性衬底606被用于促使金属层605中的张应力在衬底601中形成断裂702，由此将基础层701与衬底601分离。基础层601与衬底601包含的是相同的材料，并且在一些实施例中，基础层的厚度可以小于约20μm。基础层701的厚度由金属层605的张应力及厚度确定。本征层602、可选的BSF(在包含可选的BSF 603的实施例中)以及a-si层604会与基础层701一起从衬底601上被剥离。在方框504，柔性衬底层606会从金属层605上被移除。
在方框505，如图8所示，双HJ III-V PV电池800是用基础层701形成的。双HJ III-V电池800包括可选的BSF 603；但在一些实施例中，本征层602可以直接位于a-Si层604上，并且可选的BSF 603可以不存在。金属层605可以包括用于单HJ III-V电池800的后部触点。在基础层701上形成本征层801，在本征层801上形成a-Si层802，并且在非晶硅层802上形成TCO层803。a-Si层802可以包括与衬底601的掺杂类型相反的掺杂类型(n型或p型)；在此类实施例中，a-Si层802可以充当双HJ III-V电池800的发射极。在一些实施例中，TCO层803可以包括掺铝(Al)的氧化锌(ZnO)。在一些实施例中，在TCO层803上可以形成指状条或汇流条(未显示)。
虽然关于双HJ III-V PV电池800的一些实施例可以包括用剥离形成的基础层701，但是关于电池800的其他实施例可以包括用外延层转移形成的基础层701。在使用外延层转移来形成基础层701的实施例中，在衬底601中形成牺牲层，然后，在衬底601上形成本征层602、可选的BSF 603以及a-Si层604。在牺牲层上，基础层701、本征层602、可选的BSF 203以及a-Si层604会与衬底601分离。然后，通过使用基础层701、本征层602、可选的BSF 203以及a-Si层604以及采用在上文中对照方框505描述的相同方式，可以形成双HJIII-V电池800。
例示实施例的技术效果和益处包括形成了重量轻的柔性太阳能电池。
此处使用的术语仅出于描述特定实施例的目的，并且不旨在是对本发明的限制。如此处使用的，除非上下文清楚地另外指出，否则单数形式“一个/一(“a”“an”“the”)”旨在也包括复数形式。还应当理解，当在本说明书中使用时，术语“包括”(“comprises”和/或“comprising”)指描述的特征、整体、步骤、操作、元件和/或组件的存在，但是不排除一个或多个其它特征、整体、步骤、操作、元件、组件和/或它们的组的存在或添加。
以下权利要求中的对应结构、材料、操作以及所有装置(means)或步骤加功能元件的等同替换，旨在包括任何用于与在权利要求中具体指出的其它单元相组合地执行该功能的结构、材料或操作。所给出的对本发明的描述其目的在于示意和描述，并非是穷尽性的，也并非是要把本发明限定到所表述的形式。对于所属技术领域的普通技术人员来说，在不偏离本发明范围和精神的情况下，显然可以作出许多修改和变型。对实施例的选择和说明，是为了最好地解释本发明的原理和实际应用，使所属技术领域的普通技术人员能够明了，本发明可以有适合所要的特定用途的具有各种改变的各种实施方式。

Claims (20)

1.一种用于形成异质结III-V光伏(PV)电池的方法，所述方法包括：
执行基础层从III-V衬底的晶片的层转移，所述基础层的厚度小于约20微米；
在所述基础层上形成本征层；
在所述本征层上形成非晶硅层；以及
在所述非晶硅层上形成透明导电氧化物层。
2.根据权利要求1所述的方法，其中所述层转移包括智能切割，并且其中所述智能切割包括：
在所述基础层之下的晶片中执行氢注入；以及
对所述晶片执行退火以在所述基础层之下引入断裂。
3.根据权利要求1所述的方法，其中所述层转移包括外延层转移，以及其中所述外延层转移包括：
在所述基础层之下的晶片中形成牺牲层；以及
对所述牺牲层使用湿法化学蚀刻以从所述晶片上移除所述基础层。
4.根据权利要求1所述的方法，其中所述层转移包括剥离，并且其中所述剥离包括：
在所述晶片上形成具有张应力的金属层；
将柔性衬底粘附到所述金属层；
使用所述金属层中的张应力在所述基础层之下的晶片中产生断裂；以及
从所述金属层上移除所述柔性衬底。
5.根据权利要求4所述的方法，其中所述金属层包括镍。
6.根据权利要求4所述的方法，其中所述柔性衬底包括曲率半径小于5米的材料。
7.根据权利要求1所述的方法，还包括：
在执行所述层转移之前，在所述晶片上形成背场，其中所述背场包括锌、铟中的至少一个，并且所述背场是从带有所述基础层的晶片转移来的层。
8.根据权利要求1所述的方法，其中所述非晶硅层包括与所述衬底的掺杂类型相反的掺杂类型，并且所述非晶硅层被配置成充当发射极。
9.根据权利要求1所述的方法，还包括：
在所述晶片上形成第二本征层，以及
在执行所述层转移之前在所述第二本征层上形成第二非晶硅层，其中所述第二本征层和所述第二非晶硅层是从带有所述基础层的晶片转移来的层。
10.根据权利要求10所述的方法，其中所述第二非晶硅层包括与所述衬底的掺杂类型相同的掺杂类型，并且所述第二非晶硅层被配置成充当背场。
11.根据权利要求10所述的方法，其中所述第二非晶硅层包括与所述衬底的掺杂类型相反的掺杂类型，并且所述第二非晶硅层被配置成充当发射极。
12.根据权利要求1所述的方法，其中所述晶片包括锗或砷化镓中的一个。
13.一种异质结III-V光伏(PV)电池，包括：
包括III-V衬底的基础层，所述基础层的厚度小于约20微米；
位于所述基础层上的本征层；
位于所述本征层上的非晶硅层；以及
位于所述非晶硅层上的透明导电氧化物层。
14.根据权利要求13所述的异质结III-V PV电池，还包括：
位于所述基础层下方的背场，其中所述背场包括锌、铟或铝中的至少一个。
15.根据权利要求13所述的异质结III-V PV电池，其中所述非晶硅层包括与所述衬底的掺杂类型相反的掺杂类型，并且所述非晶硅层被配置成充当发射极。
16.根据权利要求13所述的异质结III-V PV电池，还包括位于所述基础层下方的第二本征层，以及位于所述第二本征层下方的第二非晶硅层。
17.根据权利要求16所述的异质结III-V PV电池，其中所述第二非晶硅层包括与所述衬底的掺杂类型相同的掺杂类型，并且所述第二非晶硅层被配置成充当背场。
18.根据权利要求16所述的异质结III-V PV电池，其中所述第二非晶硅层包括与所述衬底的掺杂类型相反的掺杂类型，并且所述第二非晶硅层被配置成充当发射极。
19.根据权利要求13所述的异质结III-V PV电池，还包括位于所述基础层下方的金属层，所述金属层包括镍。
20.根据权利要求13所述的异质结III-V PV电池，其中III-V衬底包括锗或砷化镓中的一个。
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