CN102428569A - 多结光伏电池的制造 - Google Patents

多结光伏电池的制造 Download PDF

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CN102428569A
CN102428569A CN2010800211638A CN201080021163A CN102428569A CN 102428569 A CN102428569 A CN 102428569A CN 2010800211638 A CN2010800211638 A CN 2010800211638A CN 201080021163 A CN201080021163 A CN 201080021163A CN 102428569 A CN102428569 A CN 102428569A
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S·W·贝德尔
N·索萨·考特斯
K·E·佛格尔
D·萨达纳
K·L·萨恩格
D·沙杰迪
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Abstract

一种用于制造多结光伏(PV)电池的方法包括：在衬底上形成包括多个结的堆，所述多个结中的每一个都具有相应的能带隙，其中所述多个结从具有最大能带隙的结位于所述衬底上到具有最小能带隙的结位于所述堆的顶部来排序；在所述具有最小能带隙的结之上形成金属层，该金属层具有拉伸应力；将柔性衬底粘附到所述金属层；及在所述衬底中的裂缝处从所述衬底剥离半导体层，其中所述裂缝是响应于所述金属层中的拉伸应力而形成的。

Description

多结光伏电池的制造
对相关申请的交叉引用
本申请请求于2009年6月9日提交的美国临时申请第61/185,247号的权益。本申请还涉及代理人卷号为YOR920100056US1、YOR920100060US1、FIS920100005US1和FIS920100006US1的申请，这些申请中的每一个都转让给国际商用机器公司(IBM)并与本申请在同一天提交，所有这些申请的全部内容都通过引用并入于此。
技术领域
本公开内容总体上涉及多结光伏电池制造的领域。
背景技术
多结III-V族光伏(PV)电池，或者说串叠型电池，是由多个p-n结组成的，每个结包括不同能带隙的材料。多结PV电池是相当高效的，而且可以吸收大部分的太阳光谱。多结电池可以外延生长的，其中较大能带隙的结在较低能带隙的结之上。用于可购买到的3-结III-V族光伏结构的转换效率可以是大约30％至40％。基于III-V族衬底的三结PV电池可以是大约200微米厚的范围，厚度的主要部分是由衬底的底层提供的，而且衬底的所述底层还可以充当第三个结。衬底的相对厚度可能造成衬底层相对不易弯曲，导致PV电池不易弯曲。
发明内容
在一个方面中，一种用于制造多结PV电池的方法包括：在衬底上形成包括多个结的堆，所述多个结中的每一个都具有相应的能带隙，其中所述多个结从具有最大能带隙的结位于所述衬底上到具有最小能带隙的结位于所述堆的顶部来排序；在所述具有最小能带隙的结的顶部形成金属层，该金属层具有拉伸应力；将柔性衬底粘附到所述金属层；以及在所述衬底的裂缝(fracture)处从所述衬底剥离(spall)半导体层，其中所述裂缝是响应于所述金属层中的拉伸应力而形成的。
在一个方面中，一种多结PV电池包括：至少一个半导体触点；包括多个结的堆，所述多个结中的每一个都具有相应的能带隙，其中所述多个结从具有最大能带隙的结位于所述至少一个半导体触点上到具有最小能带隙的结位于所述堆的顶部来排序；具有拉伸应力的金属层，该金属层位于所述具有最小能带隙的结的顶部，该金属层包括背触点；及粘附到所述金属层的柔性衬底。
另外的特征是通过文本的示例实施方式的技术实现的。其它实施方式在此具体描述并且被认为是受保护的内容的一部分。为了对示例实施方式的特征有更好的理解，参考说明与附图。
附图说明
现在参考附图，在附图中以类似的附图标记指代类似的元件：
图1例示了制造多结PV电池的方法的实施方式。
图2例示了多结PV电池的实施方式。
图3例示了衬底的实施方式。
图4例示了多结电池的结的实施方式。
图5例示了包括具有应力金属层的多结电池的实施方式。
图6例示了具有柔性衬底的多结电池的实施方式。
图7例示了在剥离之后的多结电池的实施方式。
图8例示了多结PV电池的实施方式。
具体实施方式
利用以下具体讨论的示例实施方式，提供了用于制造多结PV电池的系统与方法的实施方式。剥离可用于减小PV电池的底部衬底层的厚度。由于在每个电池中使用更少的衬底材料，因此衬底厚度的减小可以降低制造成本。此外，由于衬底层通常是PV电池中最厚的层，因此使衬底显著变薄可以显著减小电池的整体厚度，从而使电池更具柔性。剥离可以应用到半导体衬底表面的单个区域，或者应用到多个局部区域，以便允许对半导体衬底的区域选择性使用。在有些实施方式中，多个局部区域可以包括小于百分之百的原始衬底表面区域。
图1例示了用于制造多结PV电池的方法100的实施方式。参考图2至8来讨论图1。在块101，通过逆序外延生长来形成如图2中所示的多结PV电池200。在衬底201上形成结202，在结202上形成结203，并且在结203上形成结204。在有些实施方式中，衬底201可以包括III-V族衬底，例如砷化镓(GaAs)或者锗(Ge)。以下参考图3进一步讨论衬底201的结构。结204的能带隙小于结203的能带隙，而结203的能带隙小于结202的能带隙。最小能带隙的p-n结204最后生长，使得当执行剥离(即，层移植(layer transfer))时(以下参考块103讨论)，结204可以位于多结电池的背金属触点附近。在有些实施方式中，结204包括任何适当的相对小能带隙的p/n材料，例如基于GaAs或者基于Ge的材料；结202包括任何适当的相对大能带隙的材料，例如GaInP2材料；而结203包括其能带隙在结202和204的能带隙之间的任何适当的材料。结202至204仅仅是出于例示目的而示出的；电池200可以生长有任何适当个数的结，其中从具有最大能带隙的结位于衬底201上到具有最小能带隙的结位于堆的顶部来排序。
图3例示了衬底300的实施方式。衬底201的实施方式可以包括构成衬底300的一系列层301至305。衬底300包括半导体衬底301，该半导体衬底301可以包括III-V族衬底，例如Ge或GaAs，或者在有些实施方式中是硅(Si)。如果半导体衬底301包括Ge或者Si，则可以在半导体衬底301上形成包括例如GaAs或者GaInAs的籽层302。如果半导体衬底301包括GaAs，则籽层302可以包括GaAs。籽层302可以包括具有与结202兼容的适当晶格参数的任何材料。蚀刻停止/释放层303在籽层302上生长。蚀刻停止/释放层303可有助于使得在剥离(以下参考块104讨论)过程中在特定深度形成裂缝702。第二籽层304在蚀刻停止/释放层303上生长。第二籽层304可以包括与籽层302相同的材料。剥离(以下参考块104讨论)可以在第二籽层304中发生。蚀刻停止层305在第二籽层304上生长。在有些实施方式中，蚀刻停止/释放层303和蚀刻停止层305可以包括基于AlAs的材料或GaInP。结202在蚀刻停止层305上生长。衬底300仅仅是出于例示目的而示出的；衬底300可以包括任何适当个数和类型的层。
图4例示了结400的实施方式。图2中的结201至203中的每一个都可以包括在结400中示出的一系列层401至407。触点401形成在底部，而窗口层402在触点401上形成。发射极403在窗口层402上形成。基极层404在发射极403上形成。背面电场(BSF)405在基极层404上形成。背触点406在BSF 405上形成，而隧道结407在背触点406上形成。
在块102，在结204上形成具有拉伸应力的金属层501，正如图5中所示出的。金属层501可以包括镍(Ni)，而且在有些实施方式中可以是大约5至6微米厚。在块103，柔性衬底601粘附到金属层501，如图6中所示出的。在有些实施方式中，柔性衬底601可以包括聚酰亚胺(例如，聚酰亚胺胶带(Kapton tape))。
在块104，开始对结202至204的剥离，而且半导体层701在裂缝702处与衬底201分开，如图7中所示出的。在剥离过程中，柔性衬底601可以用作机械手柄。金属层501中的拉伸应力促进衬底201中裂缝702的形成。在有些实施方式中，半导体层701可以小于大约10微米厚。在有些实施方式中，可以在衬底201中形成压缩应变的裂开层(cleave layer)，以便在剥离之前在预先确定的物理深度或者区域弱化衬底201，从而允许精确定位裂缝702。裂开层可以通过将优先氢化的层结合到衬底201中来形成，或者可以包括具有比衬底201低的熔点的界面层，例如锗锡(GeSn)。也可以采用温度梯度(例如，物理梯度或者淬火)或者蚀刻来促进半导体层701在裂缝702处与衬底201剥离。
在其中衬底201包括图3中所示的层301至305的实施方式中，裂缝702可以在第二籽层304中形成，这使得在第二籽层304的顶部部分中形成半导体层701，而第二籽层304的底部部分仍保留在蚀刻停止/释放层303上。在这种实施方式中，蚀刻停止层305位于半导体层701和结202之间。蚀刻停止层305允许不损坏结202地蚀刻半导体层701。通过允许层304的任何剩余部分从衬底201的受控去除，蚀刻停止/释放层303便于衬底201的表面在剥离之后返回其原始状态，使得衬底201可以重新用作制造另外的PV电池的新表面。
在有些实施方式中，由于金属层501中的拉伸应力，因此在剥离之后半导体层701和结202至204可能有残余的压缩应变。半导体层701和结202至204中所包含的应变的幅值可以通过在剥离之前或者之后改变金属层501的厚度和/或应力来控制。利用半导体层701和结202至204构造的PV电池的光属性可以通过调整半导体层701和结202至204中应变的量来调节。
在块105，形成多结PV电池800，如图8中所示出的。可以通过例如化学或者物理蚀刻选择性地除去半导体层701的部分，以便形成半导体触点801a-c，在有些实施方式中，这些触点可以是大约200至500纳米厚。然后，可以在结202暴露的表面上形成抗反射涂层802a-b，这些涂层可以包括基于氧化物或氮化物的薄膜。然后，可以在半导体触点801a-c上形成金属电极803a-c。电极803a-c包括对半导体触点801a-c的欧姆接触。电极803a-c和半导体触点801a-c仅仅是出于例示目的而示出的；多结PV电池800可以包括任何适当数量的半导体触点和电极。金属层501可以充当用于多结PV电池800的背金属触点。柔性衬底601可以允许对金属层501的电连接，或者在有些实施方式中柔性衬底601可以被除去。在有些实施方式中，多结PV电池800的结202至204的总厚度可以小于大约15微米。多结PV电池800可以包含由于金属层501中的应力在半导体触点801a-c和结202至204中导致的一定量的压缩应变；半导体触点801a-c和结202至204中应变的量可以决定多结PV电池800的光属性。
示例实施方式的技术效果和益处包括相对成本有效的制造柔性高效多结PV电池的方法。
在此所使用的术语仅仅是为了描述特定实施方式而不是要作为本发明的限制。除非上下文明确地另外指出，否则在此所使用的单数形式“一”、“一个”和“该”旨在也包括复数形式。还应当理解，本说明书中的术语“包括”是指所述特征、整体、步骤、操作、元素和/或部件的存在，但不排除一个或多个其它特征、整体、步骤、操作、元素、部件和/或其组合的存在或添加。
以下权利要求中的所有装置或步骤加上功能元件的对应结构、材料、动作及等同物旨在包括用于与具体阐述的其它请求保护的元件相结合执行功能的任何结构、材料或动作。给出对本发明的描述是出于例示和描述的目的，但不是穷尽的或者要把本发明限定到所公开的形式。在不背离本发明的范围和主旨的情况下，许多修改和变体对本领域普通技术人员都是显而易见的。选择并描述所述具体描述的实施方式是为了最好地解释本发明的原理和实践应用，并且使本领域其他普通技术人员能够理解本发明针对各种实施方式可以进行适于预期的特定用途的各种修改。

Claims (20)

1.一种用于制造多结光伏(PV)电池的方法，该方法包括：
在衬底上形成包括多个结的堆，所述多个结中的每一个都具有相应的能带隙，其中所述多个结从具有最大能带隙的结位于所述衬底上到具有最小能带隙的结位于所述堆的顶部来排序；
在所述具有最小能带隙的结之上形成金属层，该金属层具有拉伸应力；
将柔性衬底粘附到所述金属层；及
在所述衬底中的裂缝处从所述衬底剥离半导体层，其中所述裂缝是响应于所述金属层中的拉伸应力而形成的。
2.如权利要求1所述的方法，还包括蚀刻所述半导体层，以形成至少一个半导体触点。
3.如权利要求2所述的方法，其中，半导体触点层是大约200纳米到500纳米之间厚。
4.如权利要求2所述的方法，还包括在所述具有最大能带隙的结上形成包括基于氧化物或氮化物的薄膜的抗反射涂层。
5.如权利要求2所述的方法，还包括在所述至少一个半导体触点上形成至少一个金属电极，所述至少一个金属电极包括对所述至少一个半导体触点的欧姆接触。
6.如权利要求1所述的方法，其中，所述金属层包括镍。
7.如权利要求1所述的方法，其中，所述衬底包括砷化镓或者锗中的一种。
8.如权利要求1所述的方法，其中，所述柔性衬底包括聚酰亚胺。
9.如权利要求1所述的方法，其中，所述金属层包括用于所述多结PV电池的背触点。
10.如权利要求1所述的方法，其中，所述多个结包括3个结，而且所述包括多个结的堆的厚度小于大约15微米。
11.如权利要求1所述的方法，其中，所述半导体层小于大约10微米厚。
12.如权利要求1所述的方法，其中，所述多个结中的一个或多个处于压缩应变中，该压缩应变是由所述金属层中的拉伸应力导致的。
13.如权利要求11所述的方法，其中，所述衬底包括位于半导体衬底上的籽层、位于所述籽层上的蚀刻停止/释放层、位于所述蚀刻停止/释放层上的第二籽层、以及位于所述第二籽层上的蚀刻停止层，其中所述具有最大能带隙的结形成在所述蚀刻停止层上，而且其中所述裂缝形成在所述第二籽层中。
14.如权利要求1所述的方法，其中，所述多个结中的每一个都包括：触点层、位于所述触点层上的窗口层、位于所述窗口层上的发射极层、位于所述发射极层上的基极层、位于所述基极层上的背面电场、位于所述背面电场上的背触点及位于所述背触点上的隧道结。
15.如权利要求1所述的方法，还包括在所述衬底中形成裂开层，该裂开层配置成确定所述裂缝的位置。
16.如权利要求15所述的方法，其中，所述裂开层包括在衬底内的锗锡(GeSn)、氢化层或者界面层中的一个。
17.一种多结光伏(PV)电池，包括：
至少一个半导体触点；
包括多个结的堆，所述多个结中的每一个都具有相应的能带隙，其中所述多个结从具有最大能带隙的结位于所述至少一个半导体触点上到具有最小能带隙的结位于所述堆的顶部来排序；
具有拉伸应力的金属层，该金属层位于所述具有最小能带隙的结之上，该金属层包括背触点；及
粘附到所述金属层的柔性衬底。
18.如权利要求17所述的多结PV电池，其中，所述半导体触点是大约200纳米到500纳米之间厚，而且所述半导体触点包括锗或砷化镓中的一种；其中所述柔性衬底包括聚酰亚胺；而且其中所述金属层包括镍。
19.如权利要求17所述的多结PV电池，还包括在所述具有最大能带隙的结上的抗反射涂层及在所述至少一个半导体触点上的至少一个金属电极，该抗反射涂层包括基于氧化物或者氮化物的薄膜，所述至少一个金属电极包括对所述至少一个半导体触点的欧姆接触。
20.如权利要求17所述的多结PV电池，其中，所述多个结中的一个或多个处于压缩应变下，该压缩应变是由所述金属层中的拉伸应力导致的。
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