CN102376737A - 嵌入mram的集成电路及该集成电路的制备方法 - Google Patents
嵌入mram的集成电路及该集成电路的制备方法 Download PDFInfo
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
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CN103489474A (zh) * | 2012-06-12 | 2014-01-01 | 三星电子株式会社 | 包括源极线电压产生器的磁阻存储器设备 |
CN103579087A (zh) * | 2012-07-26 | 2014-02-12 | 中芯国际集成电路制造(上海)有限公司 | 一种三维集成电路结构的制作方法和三维集成电路结构 |
WO2017160311A1 (en) * | 2016-03-18 | 2017-09-21 | Intel Corporation | Damascene-based approaches for embedding spin hall mtj devices into a logic processor and the resulting structures |
CN107452764A (zh) * | 2016-05-30 | 2017-12-08 | 上海磁宇信息科技有限公司 | 一种磁性随机存储器顶电极连接孔的形成方法 |
CN107492518A (zh) * | 2016-06-12 | 2017-12-19 | 上海磁宇信息科技有限公司 | 一种磁性隧道结顶电极连接孔的形成方法 |
CN107564931A (zh) * | 2016-07-06 | 2018-01-09 | 中电海康集团有限公司 | 一种基于共源电阻技术的磁性随机存取存储器及其共源结构制造工艺 |
RU2642960C2 (ru) * | 2013-09-11 | 2018-01-29 | Тосиба Мемори Корпорейшн | Полупроводниковое запоминающее устройство |
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CN1499609A (zh) * | 2002-11-07 | 2004-05-26 | �Ҵ���˾ | 用于埋入式后端线结构的错落金属化 |
US20050122772A1 (en) * | 2003-12-08 | 2005-06-09 | Kerszykowski Gloria J. | MRAM device integrated with other types of circuitry |
CN1774816A (zh) * | 2003-04-16 | 2006-05-17 | 飞思卡尔半导体公司 | 磁电阻式随机存取存储器件结构及其制造方法 |
CN101248531A (zh) * | 2005-07-29 | 2008-08-20 | 国际商业机器公司 | 形成mram器件的缝隙过孔位线的方法和结构 |
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Patent Citations (4)
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CN1499609A (zh) * | 2002-11-07 | 2004-05-26 | �Ҵ���˾ | 用于埋入式后端线结构的错落金属化 |
CN1774816A (zh) * | 2003-04-16 | 2006-05-17 | 飞思卡尔半导体公司 | 磁电阻式随机存取存储器件结构及其制造方法 |
US20050122772A1 (en) * | 2003-12-08 | 2005-06-09 | Kerszykowski Gloria J. | MRAM device integrated with other types of circuitry |
CN101248531A (zh) * | 2005-07-29 | 2008-08-20 | 国际商业机器公司 | 形成mram器件的缝隙过孔位线的方法和结构 |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103489474A (zh) * | 2012-06-12 | 2014-01-01 | 三星电子株式会社 | 包括源极线电压产生器的磁阻存储器设备 |
CN103489474B (zh) * | 2012-06-12 | 2017-07-18 | 三星电子株式会社 | 包括源极线电压产生器的磁阻存储器设备 |
CN103579087A (zh) * | 2012-07-26 | 2014-02-12 | 中芯国际集成电路制造(上海)有限公司 | 一种三维集成电路结构的制作方法和三维集成电路结构 |
CN103579087B (zh) * | 2012-07-26 | 2016-03-16 | 中芯国际集成电路制造(上海)有限公司 | 一种三维集成电路结构的制作方法和三维集成电路结构 |
RU2642960C2 (ru) * | 2013-09-11 | 2018-01-29 | Тосиба Мемори Корпорейшн | Полупроводниковое запоминающее устройство |
WO2017160311A1 (en) * | 2016-03-18 | 2017-09-21 | Intel Corporation | Damascene-based approaches for embedding spin hall mtj devices into a logic processor and the resulting structures |
US11469268B2 (en) | 2016-03-18 | 2022-10-11 | Intel Corporation | Damascene-based approaches for embedding spin hall MTJ devices into a logic processor and the resulting structures |
CN107452764A (zh) * | 2016-05-30 | 2017-12-08 | 上海磁宇信息科技有限公司 | 一种磁性随机存储器顶电极连接孔的形成方法 |
CN107492518A (zh) * | 2016-06-12 | 2017-12-19 | 上海磁宇信息科技有限公司 | 一种磁性隧道结顶电极连接孔的形成方法 |
CN107492518B (zh) * | 2016-06-12 | 2019-08-13 | 上海磁宇信息科技有限公司 | 一种磁性隧道结顶电极连接孔的形成方法 |
CN107564931A (zh) * | 2016-07-06 | 2018-01-09 | 中电海康集团有限公司 | 一种基于共源电阻技术的磁性随机存取存储器及其共源结构制造工艺 |
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