CN102365751B - 具有金属触点的硅太阳能电池 - Google Patents

具有金属触点的硅太阳能电池 Download PDF

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Publication number
CN102365751B
CN102365751B CN201080007688.6A CN201080007688A CN102365751B CN 102365751 B CN102365751 B CN 102365751B CN 201080007688 A CN201080007688 A CN 201080007688A CN 102365751 B CN102365751 B CN 102365751B
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CN
China
Prior art keywords
layer
metal
silicon
emitter
metal silicide
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Expired - Fee Related
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CN201080007688.6A
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English (en)
Chinese (zh)
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CN102365751A (zh
Inventor
M·贝克尔
D·吕特克诺塔普
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Atotech Deutschland GmbH and Co KG
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Atotech Deutschland GmbH and Co KG
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Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

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  • Photovoltaic Devices (AREA)
CN201080007688.6A 2009-02-09 2010-02-09 具有金属触点的硅太阳能电池 Expired - Fee Related CN102365751B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102009008152.6 2009-02-09
DE102009008152A DE102009008152A1 (de) 2009-02-09 2009-02-09 Siliziumsolarzelle
PCT/DE2010/000148 WO2010088898A2 (de) 2009-02-09 2010-02-09 Siliziumsolarzelle

Publications (2)

Publication Number Publication Date
CN102365751A CN102365751A (zh) 2012-02-29
CN102365751B true CN102365751B (zh) 2015-07-22

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201080007688.6A Expired - Fee Related CN102365751B (zh) 2009-02-09 2010-02-09 具有金属触点的硅太阳能电池

Country Status (9)

Country Link
US (1) US8759120B2 (enExample)
EP (1) EP2394305A2 (enExample)
JP (1) JP5606454B2 (enExample)
KR (1) KR20110117702A (enExample)
CN (1) CN102365751B (enExample)
DE (1) DE102009008152A1 (enExample)
MY (1) MY155744A (enExample)
TW (1) TWI492390B (enExample)
WO (1) WO2010088898A2 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ITMI20100407A1 (it) * 2010-03-12 2011-09-13 Rise Technology S R L Cella foto-voltaica con regioni di semiconduttore poroso per ancorare terminali di contatto
KR101196793B1 (ko) * 2010-08-25 2012-11-05 엘지전자 주식회사 태양 전지 및 그 제조 방법
JP5868155B2 (ja) * 2010-12-13 2016-02-24 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ 半導体の電気化学エッチング
US9284656B2 (en) * 2011-06-06 2016-03-15 International Business Machines Corporation Use of metal phosphorus in metallization of photovoltaic devices and method of fabricating same
CN103137475B (zh) * 2011-11-23 2015-09-16 中国科学院微电子研究所 一种半导体结构及其制造方法
US20130133732A1 (en) * 2011-11-30 2013-05-30 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming interconnect in solar cell
KR101149891B1 (ko) * 2011-12-09 2012-06-11 한화케미칼 주식회사 태양전지 및 이의 제조방법
TWI552372B (zh) * 2012-08-16 2016-10-01 聯華電子股份有限公司 製作太陽能電池的方法
NL2009382C2 (en) * 2012-08-29 2014-03-18 M4Si B V Method for manufacturing a solar cell and solar cell obtained therewith.
EP2709160B1 (en) 2012-09-14 2016-03-30 ATOTECH Deutschland GmbH Method for metallization of solar cell substrates
KR101396444B1 (ko) * 2013-05-06 2014-05-22 한화케미칼 주식회사 태양전지의 전극의 제조방법 및 이를 이용한 태양전지
US9990035B2 (en) 2016-03-14 2018-06-05 Robert L. Richmond Image changes based on viewer's gaze
DE102020103531A1 (de) * 2020-02-11 2021-08-12 RENA Technologies GmbH Elektrode, deren Verwendung, Akkumulator sowie Verfahren zur Herstellung einer Elektrode
CN115274884A (zh) * 2022-08-10 2022-11-01 无锡爱尔华光电科技有限公司 一种硅基太阳能电池金属电极的制备工艺

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3664874A (en) * 1969-12-31 1972-05-23 Nasa Tungsten contacts on silicon substrates
US4321283A (en) * 1979-10-26 1982-03-23 Mobil Tyco Solar Energy Corporation Nickel plating method
US5011567A (en) * 1989-12-06 1991-04-30 Mobil Solar Energy Corporation Method of fabricating solar cells
EP0325606B1 (en) * 1987-07-07 1994-09-07 Mobil Solar Energy Corporation Method of fabricating solar cells with anti-reflection coating
US20020084503A1 (en) * 2001-01-03 2002-07-04 Eun-Joo Lee High efficient pn junction solar cell
JP2004266023A (ja) * 2003-02-28 2004-09-24 Sharp Corp 太陽電池およびその製造方法
CN101305454A (zh) * 2005-11-07 2008-11-12 应用材料股份有限公司 形成光致电压接点和连线的方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03250671A (ja) * 1990-01-31 1991-11-08 Sharp Corp 半導体光電変換装置及びその製造方法
JPH07230983A (ja) * 1994-02-15 1995-08-29 Sony Corp 多孔質状シリコンの形成方法およびその多孔質状シリコンを用いた光半導体装置
TWI258819B (en) * 2002-05-14 2006-07-21 Matsushita Electric Works Ltd Method for electrochemical oxidation
JP2005136148A (ja) * 2003-10-30 2005-05-26 Kyocera Corp 太陽電池素子および太陽電池素子の製造方法
US20060022330A1 (en) * 2004-02-23 2006-02-02 Jonathon Mallari Porous silicon heat sinks and heat exchangers and related methods
ITMI20060478A1 (it) * 2006-03-16 2007-09-17 Eles Semiconductor Equipment Spa Sistema per contattare dispositivim elettronici e relativo metodo di produzione basato su filo conduttore annegato in materiale isolante
US7799182B2 (en) * 2006-12-01 2010-09-21 Applied Materials, Inc. Electroplating on roll-to-roll flexible solar cell substrates
TW200849627A (en) * 2007-05-17 2008-12-16 Day4 Energy Inc Photovoltaic cell with shallow emitter
TW200939509A (en) * 2007-11-19 2009-09-16 Applied Materials Inc Crystalline solar cell metallization methods
US8222516B2 (en) * 2008-02-20 2012-07-17 Sunpower Corporation Front contact solar cell with formed emitter
DE102008011175B4 (de) 2008-02-26 2010-05-12 Nb Technologies Gmbh Mikromechanischer Aktuator und Verfahren zu seiner Herstellung
DE202008012829U1 (de) 2008-09-26 2008-12-04 Nb Technologies Gmbh Siebdruckform

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3664874A (en) * 1969-12-31 1972-05-23 Nasa Tungsten contacts on silicon substrates
US4321283A (en) * 1979-10-26 1982-03-23 Mobil Tyco Solar Energy Corporation Nickel plating method
EP0325606B1 (en) * 1987-07-07 1994-09-07 Mobil Solar Energy Corporation Method of fabricating solar cells with anti-reflection coating
US5011567A (en) * 1989-12-06 1991-04-30 Mobil Solar Energy Corporation Method of fabricating solar cells
US20020084503A1 (en) * 2001-01-03 2002-07-04 Eun-Joo Lee High efficient pn junction solar cell
JP2004266023A (ja) * 2003-02-28 2004-09-24 Sharp Corp 太陽電池およびその製造方法
CN101305454A (zh) * 2005-11-07 2008-11-12 应用材料股份有限公司 形成光致电压接点和连线的方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Electroless deposition and silicidation of Ni contacts into p-type Porous Silicon;Henrik A.Andersson等;《Journal of Porous Materials》;20080630;第15卷(第3期);第335页左栏第1行至第341页右栏第8行、附图1-4,9 *

Also Published As

Publication number Publication date
JP2012517690A (ja) 2012-08-02
DE102009008152A1 (de) 2010-08-19
MY155744A (en) 2015-11-30
TWI492390B (zh) 2015-07-11
US8759120B2 (en) 2014-06-24
US20110318872A1 (en) 2011-12-29
TW201041152A (en) 2010-11-16
KR20110117702A (ko) 2011-10-27
WO2010088898A2 (de) 2010-08-12
CN102365751A (zh) 2012-02-29
JP5606454B2 (ja) 2014-10-15
WO2010088898A3 (de) 2011-04-14
EP2394305A2 (de) 2011-12-14

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Effective date: 20120130

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