CN102281702A - 基板布局与其形成方法 - Google Patents

基板布局与其形成方法 Download PDF

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CN102281702A
CN102281702A CN2010105593895A CN201010559389A CN102281702A CN 102281702 A CN102281702 A CN 102281702A CN 2010105593895 A CN2010105593895 A CN 2010105593895A CN 201010559389 A CN201010559389 A CN 201010559389A CN 102281702 A CN102281702 A CN 102281702A
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circuit
ground plane
circuit rail
rail
substrate
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CN102281702B (zh
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林金松
林丽花
林有玉
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
Global Unichip Corp
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
Global Unichip Corp
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Abstract

本发明提供一种基板布局，该基板布局包括：第一电源回圈(first power loop)的接地层(ground plane)，位于基板的一层上；第一线路轨(first trace rail)，位于该层上且沿着接地层的一第一外围延伸；以及一第一垂直线路(firstperpendicular trace)耦合第一线路轨。接地层介于第一线路轨与一裸片区域之间，且第一垂直导线从该第一线路轨垂直地延伸。该第一线路轨与第一垂直线路组成一第二电源回圈。本发明阻抗的优于公知结构。

Description

基板布局与其形成方法
技术领域
本发明涉及封装基板与其制法，且为了达成电源完整性，特别是有关于一种具有可布线层(routable layer)的封装基板。
背景技术
尽管已对集成电路或裸片进行封装(packaging)，为了将裸片电性连接到其他外部元件或构件，一般而言，仍需要将裸片接合至一外部基板。于各种应用中，类似的基板，例如印刷电路板(printed circuit boards，PCB)，已应用于半导体封装技术上。
为了使基板上各层的使用效率达到最大化，单一层通常会包括一接地层(ground plane)作为第一电源回圈(first power loop)与一电源供应线路(powersupply trace)作为第二电源回圈(second power loop)。这些基板可包括多种不同的电源回圈，也可包括具有接地层与电源供应线路(power supply traces)的各种组合，位于基板的多层之上。然而，如何将接地层与电源供应线路设置于单一层上却可能带来问题，例如电源回圈的高阻抗(impedance)。
举例而言，于单一层的第一电源回圈中，一般的设置可包括一接地层，此接地层大体上围绕于裸片欲接合到基板的区域的两侧。一外层可包括球栅阵列(ball grid array，BGA)，此球栅阵列具有电源供应连线(power supplyconnections)位于基板的外部边缘，其中介于所述多个连线与裸片区域之间的线用于切割开接地层。从这些连线连接到接地层的接触导通孔(vias)可将电源供应连线耦合到一线路(trace)。于一般的结构中，此线路(trace)将接地层切割成两等分，并且于接地层所在的两侧围绕着裸片区域。因此，此线路(trace)可具有”Y”型结构，其中裸片位于Y型上方分支(upper branches)之中与之间。因为线路(trace)可切断回流电流(return current)的直接路径(direct path)，因而可避免在接地层中的回流电流沿着直接路径回流回来。换言之，回流电流因而转向(diverted)，沿着该线路(trace)回流到耦合于裸片的接触导通孔(via)中。
于上述的结构中，一般回流电流的转向(diversion)会增加电源回圈的阻抗(impedance)。于较高频率的条件下，阻抗的增加会更加显著。此外，也可能造成电源噪声(power noise)的增加，因而降低裸片中信号的真度(fidelity)。因此，需要提出一种基板布局(substrate layout)与其制法，此种布局能够降低或消除上述的缺点。
发明内容
为克服上述现有技术的缺陷，本发明提供一种基板布局，包括：一第一电源回圈(first power loop)的一接地层(ground plane)，位于一基板的一层上；一第一线路轨(first trace rail)，位于该层上且沿着该接地层的一第一外围延伸，其中该接地层位于该第一线路轨与一裸片区域之间；以及一第一垂直线路(first perpendicular trace)耦合该第一线路轨，且从该第一线路轨垂直地延伸，其中该第一线路轨与该第一垂直线路组成一第二电源回圈。
本发明另提供一种基板布局，包括：一接地层(ground plane)，位于一基板的一层上，其中该接地层为一第一电源回圈(first power loop)的一部分；一第一线路轨(first trace rail)，沿着该接地层的一第一外部边缘(first outer edge)延伸，其中该第一线路轨为一第二电源回圈的一部分，且该接地层位于该第一线路轨与一裸片区域之间；以及一第一线路(first trace)耦合该第一线路轨，其中该第二电源回圈中没有任何线路沿着垂直且与一回流电流(return current)的直接路径(direct path)相交叉(intersect)的方向延伸，其中该回流电流在该接地层中流到一回流电流结构，其中该回流电流结构大体上包含一接触导通孔(via)、一接触穿孔(through-via)或上述的组合。
本发明也提供一种基板布局的形成方法，包括以下步骤：提供具有一导电材料于其上的一基板，以该导电材料形成一接地层、一第一线路轨与一第一垂直线路，其中该第一线路轨沿着该接地层的一第一外部边缘延伸，且该第一垂直线路与该第一线路轨耦合并从该第一线路轨垂直地延伸，其中该接地层介于该第一线路轨与该基板的一区域间，其中该区域为后续裸片所在位置；以及形成一绝缘材料位于该接地层、该第一线路轨与该第一垂直线路之上。
本发明其中一项优点在于位于基板外部表面上的导电球的设置弹性，以及接触导通孔的设置弹性。另一优点在于位于接地层中的线路的设置弹性。垂直线路可设置于延伸穿过接地层的任何位置上。本发明阻抗的优于公知结构。
为让本发明的上述和其他目的、特征、和优点能更明显易懂，下文特举出优选实施例，并配合附图，作详细说明如下：
附图说明
图1～图3为一系列俯视图，用以说明本发明各个实施例的基板的中间层。
图4A～图4H为一系列剖面图，用以说明本发明一优选实施例制作基板的方法。
其中，附图标记说明如下：
10～中间层
12、14～线路轨(trace rails)
16、18、20、22～线路(trace)
24、28、30～接触导通孔(vias)
26～接地层(ground plane)
32～裸片区域(die area)
40～中间层
42、44～线路轨(trace rails)
46、48、50、52～线路(trace)
54、58、60～接触导通孔(vias)
56～接地层(ground plane)
62～裸片区域(die area)
70～中间层
72、74～线路轨(trace rails)
76、78、80、82～线路(trace)
84、88、90～接触导通孔(vias)
86～接地层(ground plane)
92～裸片区域(die area)
100～核心
102、104～金属导体(metal conductor)
106、108～接地层(ground planes)
110、112、116～线路轨(rail traces)
114、118～垂直线路
120、122～树脂(resin)
124～导通孔(via hole)
126～金属导体
128～穿孔(through-via hole)
130～信号线(signal trace)
132～接触穿孔(through-via)
134～接触导通孔(via)
136、138～焊料掩模(solder mask)
139～粘着层(adhesive)
140～裸片(die)
142～镍
146～导线(wire)
148～裸片区域(die area)
具体实施方式
以下特举出本发明的实施例，并配合附图作详细说明。以下实施例的元件和设计是为了简化所揭示的发明，并非用以限定本发明。
为了电性连接到集成电路或裸片，下述实施例涉及包含连线层的基板的特定内容。然而，也可应用到其他实施例的基板中(例如中介基板(interposersubstrate))，这些基板耦合到集成电路或裸片，。
依据本发明的实施例，图1显示基板的中间层(intermediate layer)10。中间层(intermediate layer)10可以是基板中的任意一层。中间层10包含一“电源B(power B)”接地层26。图中也显示裸片区域32的轮廓，其中裸片可耦合到基板的外部表面。依图中所示，接地层26大体上围绕于裸片区域32的两侧。沿着裸片区域32的两侧为接触导通孔30，当裸片耦合到基板时，借由接触导通孔30使接地层26与裸片电性耦合。
线路轨(trace rails)12、14各自沿着接地层26的外部边缘(exterior edge)延伸，且接地层26介于线路轨12、14与裸片区域32之间。线路轨(trace rails)12、14为“电源A(power A)”回圈的一部分，且提供电源供应(power supply)与参考电压(reference voltage)。线路轨12沿着接地层26的边缘以第一方向延伸，而线路轨14沿着接地层26的另一边缘以第二方向延伸，此第二方向垂直于第一方向。线路轨12、14与接触导通孔(vias)24电性耦合，其中该接触导通孔24与位于基板外表面上的球栅阵列(ball grid array，BGA)焊接球电性耦合。BGA焊接球可位于与裸片相同或不同表面上。
第一、第二、第三、第四垂直线路16、18、20与22分别垂直地从各自的线路轨12、14延伸到接地层26中。垂直线路16、18、20与22为“电源A(power A)”回圈的另一部分，且其各自使线路轨12、14与接触导通孔28电性耦合，其中接触导通孔28与裸片电性耦合。垂直线路16、18、20与22各自垂直地延伸至最靠近自身线路的裸片区域32的边缘。须注意的是，线路轨12、14、垂直线路16、18、20、22皆与接地层26彼此电性隔离，使得线路轨12、14与垂直线路16、18、20、22不会短路(shorted)，也不会与接地层26直接接触。
于图1的结构中，流进接地层26的回流电流(return current)可更直接地(more directly)流到接触导通孔30，此接触导通孔30将回流电流导向裸片。由于垂直线路16、18、20、22皆从最接近自身的线路轨12或14和/或裸片区域的一侧垂直地延伸，因此，回流电流(return current)的直接路径(direct path)将不会受到“电源A”回圈中任何介于中间的线路所截断(cut off)。另言之，于接地层26中，仅有沿着接地层26的外部边缘而延伸的线路有可能沿着垂直于回流电流直接路径的方向延伸，除此之外，再也没有任何”电源A”线路垂直于回流电流(return current)的直接路径(direct path)。更精确地说，于此结构中，垂直线路16、18、20、22沿着平行于(parallel to)回流电流的直接路径的方向延伸。
在此结构中，因为在“电源A”回圈中没有线路会切断接地层26中回流电流的直接路径，”电源B”回圈的阻抗(impedance)可因此降低，“电源A”回圈的阻抗也会降低。比起公知结构，可延长图1中“电源A”回圈中的线路，虽然这样做会增加线路的电阻(resistance)，但发明人了解当考虑此结构的优点时，线路的增长并不会对电源回圈的阻抗造成不利的影响(adverselyeffect)。下述其他实施例将会更详细讨论此项观察结果。
依据本发明的另一实施例，图2显示基板的中间层40。图2中显示一“电源B(power B)”接地层56、一裸片区域62的轮廓，以及一接触导通孔60，当裸片耦合到基板时，接触导通孔60使接地层56与裸片电性耦合。如图中所示，接地层56大体上围绕于裸片区域62的两侧。
线路轨(trace rails)42、44各自沿着接地层56的外部边缘(exterior edge)延伸，且接地层56介于线路轨42、44与裸片区域62之间。线路轨(trace rails)42、44为”电源A(power A)”回圈的一部分。线路轨42沿着接地层56的边缘以第一方向延伸，而线路轨44沿着接地层56的另一边缘以第二方向延伸，此第二方向垂直于第一方向。线路轨42、44与接触导通孔(vias)54电性耦合，其中该接触导通孔54与位于基板外表面上的球栅阵列(ball grid array，BGA)焊接球电性耦合。BGA焊接球可位于与裸片相同或不同表面上。
类似于图1，第一、第二、第三、第四垂直线路46、48、50与52分别垂直地从各自的线路轨42、44延伸到接地层56中。垂直线路46、48、50与52为”电源A(power A)”回圈的另一部分，且其各自使线路轨42、44与接触导通孔58电性耦合，其中接触导通孔58与裸片电性耦合。垂直线路46、48、50与52各自垂直地延伸至最靠近自身线路的裸片区域62的边缘。
依据本发明的另一实施例，图3显示基板的中间层70。图3中显示一“电源B(power B)”接地层86、一裸片区域92的轮廓，以及一接触导通孔90，当裸片耦合到基板时，接触导通孔90使接地层86与裸片电性耦合。如图中所示，接地层86大体上围绕于裸片区域92的两侧。
线路轨(trace rails)72、74各自沿着接地层86的外部边缘(exterior edge)延伸，且接地层86介于线路轨72、74与裸片区域92之间。线路轨(trace rails)72、74为“电源A(power A)”回圈的一部分。线路轨72沿着接地层86的边缘以第一方向延伸，而线路轨74沿着接地层86的另一边缘以第二方向延伸，此第二方向垂直于第一方向。线路轨72、74与接触导通孔(vias)84电性耦合，其中该接触导通孔84与位于基板外表面上的球栅阵列(ball grid array，BGA)焊接球电性耦合。BGA焊接球可位于与裸片的相同或不同表面上。
类似于第1、2图，第一、第二、第三、第四垂直线路76、78、80与82分别垂直地从各自的线路轨72、74延伸到接地层86中。垂直线路76、78、80与82为”电源A(power A)”回圈的另一部分，且其各自使线路轨72、74与接触导通孔88电性耦合，其中接触导通孔88与裸片电性耦合。垂直线路76、78、80与82各自垂直地延伸至最靠近自身线路的裸片区域92的边缘。
图1～图3的差异突显出这些实施例的优点。其中的一项优点在于位于基板外部表面上的导电球(conductive balls)的设置弹性(flexibility)，以及接触导通孔(vias)的设置弹性。在图1～图3中的BGA球以及与BGA球电性耦合的接触导通孔24、54、84，可以以任意方式排列。如图1所示，接触导通孔24与BGA球位于靠近线路轨12、14的接点。如图2所示，3个接触导通孔54排列于垂直线路52上。如图3所示，2个接触导通孔84排列于垂直线路80上，且另一个接触导通孔84位于垂直线路78上。其他BGA球的设置以及与其电性耦合的接触导通孔的设置包括于其他实施例中，本发明的保护范围并不以所揭示的附图为限。此外，接触导通孔并不需要位于垂直线路上(垂直线路使线路轨与耦合至裸片上的接触导通孔耦合)。换言之，接触导通孔可与所述多个垂直导线分隔开，也可以借由另一线路与任一线路轨和/或垂直线路进行耦合。
另一优点在于位于接地层中的线路的设置弹性(flexibility)。垂直线路可设置于延伸穿过接地层的任何位置上。此外，垂直线路可直接与任何的线路轨耦合。须注意的是，此处所述的垂直线路垂直于线路轨或裸片区域边缘，或者平行于回流电流的直接路径。此处所使用的“垂直”和“平行”等用语，也包括依据一个基准线进行垂直或平行的次要路径变化(minor routingvariations)，此次要路径变化基于避开穿孔的考虑或是生产基板的限制，目的在于防止线路(trace)垂直或平行，例如，于制作基板的过程中，导线只可延伸于四个方向中的某一方向(X方向、Y方向、与X方向相差正45度、与X方向相差负45度)
如上所述，上述实施例可同时降低电源A回圈与电源B回圈的阻抗。发明人也观察到图1～图3实施例的阻抗优于公知具有相对BGA配置的结构。由于降低上述情况中的阻抗，也可降低电源回圈中的噪声，或是降低存在于裸片中或从裸片输出的信号的噪声。
关于图1的实施例，电源B回圈于频率266MHz、533MHz、800MHz的条件下的阻抗分别为0.74Ω、1.67Ω与2.88Ω，此数值分别高于公知结构67.5％、75.7％与89.5％。此外，此实施例中的电源A回圈于直流电(DC)的条件下具有0.08Ω的阻抗，此数值高于公知结构42.9％。
关于图2的实施例，电源B回圈于频率266MHz、533MHz、800MHz的条件下的阻抗分别为0.76Ω、1.68Ω与2.70Ω，此数值分别高于公知结构69.0％、77.0％与97.7％。此外，此实施例中的电源A回圈于直流电(DC)的条件下具有0.09Ω的阻抗，此数值高于公知结构18.2％。
关于图3之实施例，电源B回圈于频率266MHz、533MHz、800MHz的条件下之阻抗分别为0.79Ω、1.73Ω与2.86Ω，此数值分别高于公知结构68.4％、73.8％与85.6％。此外，此实施例中的电源A回圈于直流电(DC)的条件下具有0.06Ω的阻抗，此数值高于公知结构14.3％。
依据本发明的另一实施例，图4A-图4H显示基板的形成方法。于图4A中，提供一核心100，其中在核心100的上表面压合上一金属导体102，在核心100的下表面压合上另一金属导体104。金属导体102与104可以是铜。于图4B中，蚀刻金属导体102与104，以形成线路轨(rail traces)110、112与接地层106、108。图4B的剖面图的平面图显示于图4C中，其中沿着图4C中的线4B-4B以形成图4B的剖面。图4C中显示接地层106、线路轨110、116与垂直线路114、118。此布局为图1～图3的简化布局。此外，此布局所显示的是形成于核心100上表面的导线层(wiring layer)，而且类似的布局可形成于核心100的下表面。
于图4D中，形成树脂120以覆盖核心100上表面的导线层上，且形成另一树脂122以覆盖核心100下表面的导线层。于图4E中，蚀刻树脂120以形成导通孔(via hole)124，钻过树脂120、核心100与树脂122以形成穿孔(through-via hole)128。接着，电镀一金属导体126以覆盖整个结构。于第4F图中，蚀刻金属导体126以形成信号线130、接触穿孔132与接触导通孔134。形成一焊料掩模136以覆盖结构顶部，形成另一焊接掩模138以覆盖结构底部。
于图4G中，移除耦合到接触导通孔(via)134的金属导体上的焊料掩模(solder mask)136。接着，进行表面抛光(surface finish)。举例而言，于移除的区域电镀镍142与金144，以形成导线接合指状物(wire bond finger)。也可使用其他表面抛光步骤，例如使用无电极电镀镍金(electroless nickel immersiongold，ENIG)、无电极电镀镍钯金(nickel electroless palladium immersion gold，ENEPIG)或镍钯层。接着，裸片140借由粘着剂139接合到此结构。导线146用于接合指状物与裸片140，以形成结构与裸片之间的电性连接。图4H显示位于核心100上表面的金属线层，此图类似于第4C图。图4H中也显示迭加于(super-imposed)此布局上的接触穿孔(through-via)132、接触导通孔(via)与裸片区域148。
虽然本发明已以数个优选实施例揭示如上，然而其并非用以限定本发明，任何本领域技术人员，在不脱离本发明的精神和范围内，当可作任意的更动与润饰，因此本发明的保护范围当视随附的权利要求所界定的范围为准。

Claims (10)

1.一种基板布局，包括：
一第一电源回圈的一接地层，位于一基板的一层上；
一第一线路轨，位于该层上且沿着该接地层的一第一外围延伸，其中该接地层位于该第一线路轨与一裸片区域之间；以及
一第一垂直线路耦合该第一线路轨，且从该第一线路轨垂直地延伸，其中该第一线路轨与该第一垂直线路组成一第二电源回圈。
2.如权利要求1所述的基板布局，还包括：
一第二线路轨，沿着该接地层的一第二外围以一第二方向延伸，其中该第一线路轨沿着不同于该第二方向的一第一方向延伸，且其中该第一线路轨与该第二线路轨彼此电性耦合；以及
一第二垂直线路与该第二线路轨耦合，且从该第二线路轨垂直地延伸。
3.如权利要求2所述的基板布局，还包括：
一第三垂直线路与该第二线路轨耦合，且从该第二线路轨垂直地延伸。
4.如权利要求1所述的基板布局，其中该第二电源回圈中没有任何线路截断从该接地层流向一接触导通孔的回流电流的直接路径，其中该接触导通孔使该接地层电性耦合至一裸片。
5.如权利要求1所述的基板布局，其中一接触导通孔、一接触穿孔或上述的组合与该第一线路轨直接耦合；以及该接触导通孔、该接触穿孔或上述的组合与一焊接球电性耦合。
6.如权利要求1所述的基板布局，其中一接触导通孔、一接触穿孔或上述的组合与该第一垂直线路直接耦合；以及该接触导通孔、该接触穿孔或上述的组合与一焊接球电性耦合。
7.如权利要求1所述的基板布局，其中该第一垂直线路与一接触导通孔、接触穿孔或上述的组合直接耦合；以及该接触导通孔、该接触穿孔或上述的组合与一指状物电性耦合，其中该指状物电性耦合该裸片。
8.一种基板布局，包括：
一接地层，位于一基板的一层上，其中该接地层为一第一电源回圈的一部分；
一第一线路轨，沿着该接地层的一第一外部边缘延伸，其中该第一线路轨为一第二电源回圈的一部分，且该接地层位于该第一线路轨与一裸片区域之间；以及
一第一线路耦合该第一线路轨，其中该第二电源回圈中没有任何线路沿着垂直且与一回流电流的直接路径相交叉的方向延伸，其中该回流电流在该接地层中流到一回流电流结构，其中该回流电流结构大体上包含一接触导通孔、一接触穿孔或上述的组合。
9.如权利要求8所述的基板布局，其中该第一线路从该第一线路轨垂直地延伸。
10.如权利要求8所述的基板布局，还包括：
一第二线路轨，沿着该接地层的一第二外部边缘延伸，其中该第一外部边缘与该第二外部边缘以不同方向延伸，且其中该第一线路轨与该第二线路轨彼此电性耦合；以及
一第二线路与该第二线路轨耦合，其中该第二线路从该第二线路轨垂直地延伸。
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