CN102237327A - Chip with thickened metal layer of press welding block and manufacturing method for chip - Google Patents
Chip with thickened metal layer of press welding block and manufacturing method for chip Download PDFInfo
- Publication number
- CN102237327A CN102237327A CN2010101636478A CN201010163647A CN102237327A CN 102237327 A CN102237327 A CN 102237327A CN 2010101636478 A CN2010101636478 A CN 2010101636478A CN 201010163647 A CN201010163647 A CN 201010163647A CN 102237327 A CN102237327 A CN 102237327A
- Authority
- CN
- China
- Prior art keywords
- welding block
- press welding
- chip
- metal layer
- layer thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
- H01L2224/45012—Cross-sectional shape
- H01L2224/45015—Cross-sectional shape being circular
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01014—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
The invention discloses a chip with a thickened metal layer of a press welding block and a manufacturing method for the chip and belongs to the technical field of semiconductor chip manufacturing. The chip comprises a silicon substrate, a metal layer on the silicon substrate, a passivation layer on the metal layer and the press welding block on the metal layer, wherein the thickness of the metal layer of the press welding block is greater than that of the metal layer of a metal wire. The manufacturing method for the chip comprises the following steps of: sputtering, photoetching and etching the metal layer on the surface of the silicon substrate according to the function of the chip so as to form the metal wire and the press welding block in the chip; growing, photoetching and etching the passivation layer and etching a press welding block region; and sputtering, photoetching and etching the metal layer again on the surface of the passivation layer and retaining the metal in the press welding block region. During manufacturing of the chip, an effect of independently thickening the press welding block inside the chip is achieved and the requirement of a chip package factory on the thickness of the metal layer of the press welding block inside the chip during routing by using a copper wire is met.
Description
Technical field
The invention belongs to semiconductor chip manufacturing technology field, be specifically related to a kind of chip and manufacture method thereof of press welding block metal level thickening.
Background technology
The development trend of chip package process is progressively to adopt copper cash to do bonding (bonding) wire rod, replacement gold thread and aluminum steel.Mainly be because copper cash has low resistivity, high thermal conductivity, cheap or the like a series of advantage.But, copper cash is with respect to gold thread and aluminum steel, its hardness ratio is higher, and oxidation easily in routing, is broken (as shown in Figure 1) with the chip pressure welding piece easily, so with copper cash in packaging and routing, requirement to chip pressure welding piece metal layer thickness is also higher, and thick more copper cash, and is thick more to the metal layer thickness requirement of press welding block.
Existing chip manufacturing process, the metal layer thickness of press welding block just can not satisfy the requirement of copper cash routing.If the metal layer thickness of direct simple thickening chip manufacturing process, that bring very big trouble can for live width control, the etching of metal level.Same bonding jumper width/spacing, metal level is thick more, and the height/width of metal wire is bigger than more, and the difficulty of metal etch is just big more.As shown in Figure 2, obviously thicken the thickness of chip inner metal layer, the height of metal wire and width are than also corresponding increase, and this can bring very burden to metal etch.
Present solution is: encapsulation factory improves the copper cash package level constantly optimizing, and under the situation about additionally not thickening with convenient chip pressure welding piece metal, routing technology can be finished.But this improves the desirable level that never reaches.Can carry out the producer of copper cash encapsulation, and few.More crucial is, now increasing client requires chip manufacturing factory will satisfy the copper cash packaging technology, and this just requires chip manufacturing process must do some improvement.
Summary of the invention
Technical problem to be solved by this invention is that the press welding block metal level of chip internal is thickeied separately, so that satisfy the requirement that chip packaging factory adopts copper cash routing and chip manufacturing factory metal etch process difficulty or ease simultaneously.
In order to solve the problems of the technologies described above, the technical solution used in the present invention is as follows:
A kind of chip of press welding block metal level thickening comprises metal level, the passivation layer on the metal level and press welding block on silicon substrate, the silicon substrate, and wherein, the metal layer thickness of press welding block is greater than the metal layer thickness of metal routing.
A kind of manufacture method of press welding block metal level thickening chip comprises
According to the function of chip, in sputter, photoetching and the etching of the enterprising row metal layer of surface of silicon, finish the metal routing in the chip, form the step of press welding block simultaneously;
Passivation layer growth, photoetching and etching, the step that press welding block zone etching is come out;
On passivation layer surface, carry out the step of sputter, photoetching and the etching of metal level once more, keep the metal in press welding block zone.
Chip of the present invention and manufacture method thereof, by improving the manufacturing process flow of chip, after growth, photoetching and the etching of passivation layer, increase the step of metal level sputter, photoetching and etching, the metal that keeps the press welding block zone, thereby realized when chip manufacturing the effect of thickening chip internal press welding block metal level separately, satisfied when chip packaging factory adopts the copper cash routing requirement chip internal press welding block metal layer thickness.
Description of drawings
Press welding block that Fig. 1 is punched and normal press welding block contrast figure (overlooking and profile);
Fig. 2 is that figure (profile) is shone in the height and the width comparison of metal wire before and after the metal level thickening;
Fig. 3 is a method flow diagram of making press welding block thickening chip;
Fig. 4 is the structure chart (profile) after the metal level etching first time;
Fig. 5 is the structure chart (profile) after the passivation layer etching;
Fig. 6 is the structure chart (profile) after the metal level sputter for the second time;
Fig. 7 is the structure chart (profile) after the metal level etching second time.
Embodiment
Describe the present invention below in conjunction with embodiment and accompanying drawing.
As shown in Figure 7, the invention provides a kind of chip of press welding block thickening, this chip comprises silicon substrate, the metal level on the silicon substrate, passivation layer on the metal level and press welding block.Wherein, the metal layer thickness d1 of press welding block is greater than the metal layer thickness d2 of metal routing in the chip.
The metal layer thickness d1 of press welding block adopts the diameter decision of copper cash under the situation of copper cash routing during by Chip Packaging, and the diameter of copper cash is big more, and the metal layer thickness of press welding block is thick more.The thickness requirement that the metal layer thickness of press welding block is not punched when adopting the copper cash routing of a certain diameter is a minimum.In the existing chip encapsulation technology, when adopting the copper cash routing, generally between 0.8mil～6.0mil (Mill), correspondingly, the metal layer thickness of press welding block is preferably between 1.0 μ m～8.0 μ m (micron) during chip manufacturing for the diameter of copper cash.
Embodiment 1
The structure of present embodiment chips as shown in Figure 7.Adopt the copper cash routing when Chip Packaging, the copper wire diameter that present embodiment adopts is 0.8mil.When chip manufacturing, the metal layer thickness of press welding block is 1.0 μ m.Test shows: if be lower than 1.0 μ m, then when adopting diameter to be the copper cash routing of 0.8mil, press welding block is punched easily.The composition of press welding block is the alloy of Al (aluminium), Si (silicon) and Cu (copper), and wherein Al accounts for about 98 percent.
Embodiment 2
The structure of present embodiment chips as shown in Figure 7.Adopt the copper cash routing when Chip Packaging, the copper wire diameter that present embodiment adopts is 1.0mil.When chip manufacturing, the metal layer thickness of press welding block is 1.5 μ m.Test shows: if be lower than 1.5 μ m, then when adopting diameter to be the copper cash routing of 1.0mil, press welding block is punched easily.The composition of press welding block is identical with embodiment 1.
Embodiment 3
The structure of present embodiment chips as shown in Figure 7.Adopt the copper cash routing when Chip Packaging, the copper wire diameter that present embodiment adopts is 1.2mil.When chip manufacturing, the metal layer thickness of press welding block is 2.0 μ m.Test shows: if be lower than 2.0 μ m, then when adopting diameter to be the copper cash routing of 1.2mil, press welding block is punched easily.The composition of press welding block is identical with embodiment 1.
Embodiment 4
The structure of present embodiment chips as shown in Figure 7.Adopt the copper cash routing when Chip Packaging, the copper wire diameter that present embodiment adopts is 1.5mil or 2.0mil.When chip manufacturing, the metal layer thickness of press welding block is 3.0 μ m.Test shows: if be lower than 3.0 μ m, then when the copper cash routing that adopts diameter at 1.5mil or 2.0mil, press welding block is punched easily.The composition of press welding block is identical with embodiment 1.
Embodiment 5
The structure of present embodiment chips as shown in Figure 7.Adopt the copper cash routing when Chip Packaging, the copper wire diameter that present embodiment adopts is 3.0mil or 4.0mil.When chip manufacturing, the metal layer thickness of press welding block is 4.0 μ m.Test shows: if be lower than 4.0 μ m, then when adopting diameter to be the copper cash routing of 3.0mil or 4.0mil, press welding block is punched easily.The composition of press welding block is identical with embodiment 1.
Embodiment 6
The structure of present embodiment chips as shown in Figure 7.Adopt the copper cash routing when Chip Packaging, the copper wire diameter that present embodiment adopts is 5.0mil or 6.0mil.When chip manufacturing, the metal layer thickness of press welding block is not less than 6.0 μ m, is 8.0 μ m in the present embodiment.Test shows: if be lower than 6.0 μ m, then when adopting diameter to be the copper cash routing of 5.0mil or 6.0mil, press welding block is punched easily.The composition of press welding block is identical with embodiment 1.
As shown in Figure 3, the present invention also provides a kind of manufacturing method of chip as shown in Figure 7.This method may further comprise the steps:
The first step, the sputter of metal level, photoetching and etching.
In the sputter of the enterprising row metal layer of surface of silicon, and, finish the metal routing in the chip, form press welding block simultaneously according to the chip functions needs.This moment, the metal thickness of press welding block was identical with the metal layer thickness of metal routing in the chip.Because the line thickness and the spacing of metal routing are smaller, the too thick metal level so this operation can not be grown.Metal level chip after etching structure as shown in Figure 4 for the first time.
Second step, the growth of passivation layer, photoetching and etching.
The growth of passivation protective layer, and the regional etching of press welding block come out.Metal layer thickness on the press welding block adopts the routing requirement of gold thread and aluminum steel in the time of can satisfying Chip Packaging at this moment, but can not satisfy the routing requirement of copper cash.Passivation layer chip after etching structure as shown in Figure 5.
The 3rd step, sputter, photoetching and the etching of metal level for the second time.
Carry out the sputter of metal level on passivation layer once more, the chip structure after the sputter as shown in Figure 6.Carry out photoetching and etching then, adopt mask plate that the metal in press welding block zone is remained, other regional metals all erode in acid tank.Chip structure after manufacturing is finished as shown in Figure 7.
The purpose of this step is on the press welding block zone, sputter last layer metal again, and the metal level of metal routing is not thickeied in the chip, so this moment d1＞d2.And because the size and the spacing of press welding block are all very big, so follow-up etching is no problem, adopt wet etching, cost is not high yet, and speed is also fast.
When chip manufacturing, adopt the diameter of copper cash under the situation of copper cash routing when the metal layer thickness of press welding block depends on Chip Packaging in the chip, the thickness requirement of not punched when adopting the copper cash routing of a certain diameter is a minimum.Test shows: it is preferable that the corresponding relation between the composition of copper wire diameter, press welding block metal layer thickness, press welding block adopts proportioning as shown in the table.
| Copper wire diameter (mil) | Press welding block metal layer thickness (μ m) | The press welding block composition |
| 0.8 | 1.0 | Al，Si，Cu |
| 1.0 | 1.5 | Al，Si，Cu |
| 1.2 | 2.0 | Al，Si，Cu |
| 1.5 | 3.0 | Al，Si，Cu |
| 2.0 | 3.0 | Al，Si，Cu |
| 3.0 | 4.0 | Al，Si，Cu |
| 4.0 | 4.0～6.0 | Al，Si，Cu |
| 5.0 or 6.0 | 6.0～8.0 | Al，Si，Cu |
Obviously, those skilled in the art can carry out various changes and modification to the present invention and not break away from the spirit and scope of the present invention.Like this, if of the present invention these are revised and modification belongs within the scope of claim of the present invention and equivalent technology thereof, then the present invention also is intended to comprise these changes and modification interior.
Claims (10)
1. the chip of a press welding block metal level thickening comprises metal level, the passivation layer on the metal level and press welding block on silicon substrate, the silicon substrate, and it is characterized in that: the metal layer thickness of described press welding block is greater than the metal layer thickness of metal routing.
2. the chip of press welding block metal level thickening as claimed in claim 1, it is characterized in that: the diameter of copper cash under the situation of employing copper cash routing when the metal layer thickness of described press welding block depends on Chip Packaging, the diameter of copper cash is big more, and the metal layer thickness of press welding block is thick more; The thickness requirement that the metal layer thickness of press welding block is not punched when adopting the copper cash routing of certain diameter is a minimum.
3. the chip of press welding block metal level thickening as claimed in claim 2, it is characterized in that: the span of described copper wire diameter is between 0.8mil～6.0mil, and correspondingly, the span of press welding block metal layer thickness is between 1.0 μ m～8.0 μ m.
4. the chip of press welding block metal level thickening as claimed in claim 3, it is characterized in that: when the diameter of described copper cash was 0.8mil, the press welding block metal layer thickness was 1.0 μ m.
5. the chip of press welding block metal level thickening as claimed in claim 3, it is characterized in that: when the diameter of described copper cash was 1.0mil, the span of press welding block metal layer thickness was between 1.5 μ m～8.0 μ m.
6. the chip of press welding block metal level thickening as claimed in claim 3, it is characterized in that: when the diameter of described copper cash was 1.2mil, the span of press welding block metal layer thickness was between 2.0 μ m～8.0 μ m.
7. the chip of press welding block metal level thickening as claimed in claim 3, it is characterized in that: when the diameter of described copper cash was 1.5mil or 2.0mil, the span of press welding block metal layer thickness was between 3.0 μ m～8.0 μ m.
8. the chip of press welding block metal level thickening as claimed in claim 3, it is characterized in that: when the diameter of described copper cash was 3.0mil or 4.0mil, the span of press welding block metal layer thickness was between 4.0 μ m～8.0 μ m.
9. the chip of press welding block metal level thickening as claimed in claim 3, it is characterized in that: when the diameter of described copper cash was 5.0mil or 6.0mil, the span of press welding block metal layer thickness was between 6.0 μ m～8.0 μ m.
10. the manufacture method of a press welding block metal level thickening chip comprises
According to the function of chip, in sputter, photoetching and the etching of the enterprising row metal layer of surface of silicon, finish the metal routing in the chip, form the step of press welding block simultaneously;
Passivation layer growth, photoetching and etching, the step that press welding block zone etching is come out;
It is characterized in that: described method also is included in the step of sputter, photoetching and the etching of carrying out metal level on the passivation layer surface once more, keeps the metal in press welding block zone.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010101636478A CN102237327A (en) | 2010-05-05 | 2010-05-05 | Chip with thickened metal layer of press welding block and manufacturing method for chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010101636478A CN102237327A (en) | 2010-05-05 | 2010-05-05 | Chip with thickened metal layer of press welding block and manufacturing method for chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102237327A true CN102237327A (en) | 2011-11-09 |
Family
ID=44887834
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010101636478A Pending CN102237327A (en) | 2010-05-05 | 2010-05-05 | Chip with thickened metal layer of press welding block and manufacturing method for chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102237327A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103165413A (en) * | 2011-12-16 | 2013-06-19 | 北大方正集团有限公司 | Adhesive residue removing method |
| CN104425288A (en) * | 2013-08-23 | 2015-03-18 | 北大方正集团有限公司 | Manufacturing method of chip encapsulation structure |
| CN104659024A (en) * | 2015-02-15 | 2015-05-27 | 上海华虹宏力半导体制造有限公司 | Integrated circuit packaging method |
| CN104795353A (en) * | 2014-01-16 | 2015-07-22 | 北大方正集团有限公司 | Method for making metal interconnect and chip with metal interconnect |
| CN108109925A (en) * | 2017-12-12 | 2018-06-01 | 深圳市晶特智造科技有限公司 | The pressure welding module making method of semiconductor chip |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5455195A (en) * | 1994-05-06 | 1995-10-03 | Texas Instruments Incorporated | Method for obtaining metallurgical stability in integrated circuit conductive bonds |
| US6069066A (en) * | 1998-12-09 | 2000-05-30 | United Microelectronics Corp. | Method of forming bonding pad |
| CN1979837A (en) * | 2005-12-01 | 2007-06-13 | 上海华虹Nec电子有限公司 | Application method of press welding block on top of logic integrated circuit |
| CN101465303A (en) * | 2007-12-21 | 2009-06-24 | 华邦电子股份有限公司 | Method for forming welding pad opening |
| CN201336308Y (en) * | 2009-01-16 | 2009-10-28 | Bcd半导体制造有限公司 | Integrated circuit chip structure |
| CN102044457A (en) * | 2010-01-28 | 2011-05-04 | 中颖电子股份有限公司 | Method for manufacturing metal bonding pad and corresponding metal bonding pad structure |
-
2010
- 2010-05-05 CN CN2010101636478A patent/CN102237327A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5455195A (en) * | 1994-05-06 | 1995-10-03 | Texas Instruments Incorporated | Method for obtaining metallurgical stability in integrated circuit conductive bonds |
| US6069066A (en) * | 1998-12-09 | 2000-05-30 | United Microelectronics Corp. | Method of forming bonding pad |
| CN1979837A (en) * | 2005-12-01 | 2007-06-13 | 上海华虹Nec电子有限公司 | Application method of press welding block on top of logic integrated circuit |
| CN101465303A (en) * | 2007-12-21 | 2009-06-24 | 华邦电子股份有限公司 | Method for forming welding pad opening |
| CN201336308Y (en) * | 2009-01-16 | 2009-10-28 | Bcd半导体制造有限公司 | Integrated circuit chip structure |
| CN102044457A (en) * | 2010-01-28 | 2011-05-04 | 中颖电子股份有限公司 | Method for manufacturing metal bonding pad and corresponding metal bonding pad structure |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103165413A (en) * | 2011-12-16 | 2013-06-19 | 北大方正集团有限公司 | Adhesive residue removing method |
| CN103165413B (en) * | 2011-12-16 | 2016-03-30 | 北大方正集团有限公司 | A kind of method removing cull |
| CN104425288A (en) * | 2013-08-23 | 2015-03-18 | 北大方正集团有限公司 | Manufacturing method of chip encapsulation structure |
| CN104795353A (en) * | 2014-01-16 | 2015-07-22 | 北大方正集团有限公司 | Method for making metal interconnect and chip with metal interconnect |
| CN104659024A (en) * | 2015-02-15 | 2015-05-27 | 上海华虹宏力半导体制造有限公司 | Integrated circuit packaging method |
| CN108109925A (en) * | 2017-12-12 | 2018-06-01 | 深圳市晶特智造科技有限公司 | The pressure welding module making method of semiconductor chip |
| CN108109925B (en) * | 2017-12-12 | 2020-08-14 | 温州曼昔维服饰有限公司 | Method for manufacturing pressure welding module of semiconductor chip |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102237327A (en) | Chip with thickened metal layer of press welding block and manufacturing method for chip | |
| KR101704839B1 (en) | Copper alloy bonding wire for semiconductor | |
| KR102042953B1 (en) | Copper Alloy Bonding Wire for Semiconductor Devices | |
| US8101123B2 (en) | Composite alloy bonding wire and manufacturing method thereof | |
| CN102776408B (en) | Silver alloy wire and preparation method thereof | |
| CN105830205A (en) | Bonding wire for semiconductor devices | |
| CN102734625A (en) | Steel-aluminum composite board and preparation method thereof | |
| CN111383935A (en) | Bonding wire for semiconductor device | |
| CN104241237B (en) | Plated copper wire structure used for ultrasonic bonding | |
| CN102157442B (en) | Method for forming interconnection among microelectronic chips | |
| JP2012084788A (en) | STRAIGHT ANGLE SILVER (Ag) CLAD COPPER RIBBON FOR HIGH-TEMPERATURE SEMICONDUCTOR ELEMENT | |
| WO2015004956A1 (en) | Semiconductor device and manufacturing method for same | |
| CN103219318B (en) | High-temperature-resistant MIM capacitor for microwave internal matching transistor and manufacturing method thereof | |
| CN102189140A (en) | Pressure mold box for cold drawing of high-carbon steel wire | |
| CN102361026A (en) | Copper-based bonding wire with anti-oxidation function | |
| CN102044457B (en) | Method for manufacturing metal bonding pad and corresponding metal bonding pad structure | |
| CN103842529B (en) | Gold (Au) alloy bonding line | |
| JP5128152B2 (en) | Copper alloy for lead frame excellent in bare bonding property and manufacturing method thereof | |
| CN105009267A (en) | Method for manufacturing power device | |
| JPS6365036A (en) | Fine copper wire and its production | |
| CN102446841A (en) | Preparation method for low-stress metal hard mask layer | |
| WO2015053128A1 (en) | Bonding-wire copper strand, and manufacturing method for bonding-wire copper strand | |
| CN207128105U (en) | Cutting steel wire | |
| CN104779149A (en) | Manufacturing method of metal electrode of semiconductor device | |
| JP5166738B2 (en) | Gold wire for semiconductor element connection |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20111109 |