CN104241191A - Film forming process for metal line - Google Patents
Film forming process for metal line Download PDFInfo
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- CN104241191A CN104241191A CN201310227238.3A CN201310227238A CN104241191A CN 104241191 A CN104241191 A CN 104241191A CN 201310227238 A CN201310227238 A CN 201310227238A CN 104241191 A CN104241191 A CN 104241191A
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- forming process
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
The invention discloses a film forming process for a metal line, which mainly comprises the following steps: 1) forming a first barrier layer on a substrate; 2) forming a first metal layer on the first barrier layer; 3) etching one part of the first metal layer; 4) successively forming a second metal layer and a second barrier layer; and 5) performing pattern etching for forming the metal line. Through a manner of changing oriented growth of a metal aluminum film, the film forming process for the metal line has functions of: reducing etching residue of metal aluminum, preventing formation of metal black points in an etching trough, effectively improving device shortcircuit caused by the black points, and improving packaging quality of the device.
Description
Technical field
The invention belongs to semiconductor integrated circuit manufacturing process, relate to a kind of semiconductor film-forming process, particularly relate to a kind of metal wire film forming process.
Background technology
The characteristic of metal wire film-forming process on semiconductor device has vital impact, especially the conductive resistance of device.Due to the integrated trend of semiconductor technology, the performance of semiconductor chip is also more and more abundanter, and incident is exactly that the circuit that causes of the integrated degree of semiconductor chip is concentrated, and device heating amount increases, and finally affects the performance and used life of device.
As shown in Figure 3 B, traditional metal wire film-forming process generally adopts following steps: first substrate forms barrier layer, growth regulation layer of metal layer over the barrier layer, and then grow second layer metal level and barrier layer, form metal wire model finally by pattern etching.Traditional handicraft adopts one-pass film-forming directly to generate layer of metal layer; the anti-oxidation of film forming one deck block protective layer; due to crystal trend growth during metal level film forming; different crystal metal etch speed is different, and after etching, the slower crystalline metal of etch rate is not etched completely; this traditional handicraft easily causes metal etch to remain (see figure 1); metal stain is formed, because stain can cause shorted devices (see Fig. 4 A, Fig. 4 C) in etching groove.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of metal wire film forming process, by changing the mode of aluminium film trend growth, reduce metallic aluminium etching residue, prevent the formation of metal stain in etching groove, the shorted devices that effective improvement causes due to stain, improves the package quality of device.
For solving the problems of the technologies described above, the invention provides a kind of metal wire film forming process, mainly comprising following steps:
1) on substrate, ground floor barrier layer is formed;
2) on ground floor barrier layer, first layer metal layer is formed;
3) a part of first layer metal layer is etched away;
4) second layer metal layer and second layer barrier layer is formed successively;
5) pattern etching forms metal wire.
Further, in step 1), described ground floor barrier layer is the composite material of TiN or Ti and TiN, and its film forming thickness is
Further, in step 2) in, describedly on ground floor barrier layer, form first layer metal layer, mainly adopt physical sputtering film-forming process, film forming thickness is
sputter temperature is 10 ~ 500 DEG C, and pressure is at 1 ~ 10torr.
Further, in step 3), the method for described etching of first layer metal level be selected from dry etching, wet etching one or several, etch thicknesses is
Further, in step 3), before and after etching, the Film Thickness Ratio of first layer metal layer is 100:90-1000:999; The method of described etching of first layer metal level adopts the plasma etching method in dry etching, the metal oxide film on removing surface, and etching temperature is 10 ~ 500 DEG C, and etching pressure is at 1 ~ 10torr; This step improves the crystal morphology on first layer metal layer surface by etching mode.
Further, in step 4), described formation second layer metal layer and second layer barrier layer, main employing physical sputtering film-forming process, second layer metal layer film forming thickness is
sputter temperature is 10 ~ 500 DEG C, and pressure is at 1 ~ 10torr: second layer barrier material is the composite material of Ti and TiN, and the film forming thickness on second layer barrier layer is
sputter temperature is 10 ~ 500 DEG C, and pressure is at 1 ~ 10torr.
Further, in step 5), the lithographic method of described pattern etching comprises dry etching and wet etching.
Compared to the prior art, the present invention has following beneficial effect: metal wire film forming process of the present invention effectively can improve the metal wire trend that repeatedly film forming causes and grow, by changing the mode of aluminium film trend growth, make to etch metal residual in later metal scribe line to reduce, prevent the formation of metal stain in etching groove, the shorted devices that effective improvement causes due to stain, improves the package quality of device.
Accompanying drawing explanation
Fig. 1 is the schematic diagram that traditional handicraft film forming forms etching residue in device scribe line;
Fig. 2 is the film forming structural representation adopting metal wire film forming process of the present invention;
Fig. 3 A is the process chart of metal wire film forming process of the present invention;
Fig. 3 B is the process chart of conventional metals line film forming process;
Fig. 4 A is the metal line layer schematic diagram adopting conventional metals line film forming process to be formed;
Fig. 4 B is the metal line layer schematic diagram adopting metal wire film forming process of the present invention to be formed;
Fig. 4 C adopts conventional metals line film forming process cause metal etch to remain and form the schematic diagram of metal stain in etching groove;
Fig. 4 D is the schematic diagram that in the metal scribe line after adopting metal wire film forming process of the present invention, metallic aluminium remains minimizing;
Wherein, in figure, description of reference numerals is as follows:
101-substrate, 102-ground floor barrier layer, 103-first layer metal layer, 104-second layer metal layer, 105-second layer barrier layer.
Embodiment
Below in conjunction with drawings and Examples, the present invention is further detailed explanation.
As shown in fig. 2 and fig. 3 a, a kind of metal wire film-forming process of the present invention new method, step comprises:
1) ground floor barrier layer 102 is formed on the substrate 101 to prevent the damage caused substrate 101 during metal film forming; Described ground floor barrier layer 102, film forming thickness is
for the composite material of TiN or Ti and TiN.
2) on ground floor barrier layer 102, first layer metal layer 103 is formed; This step mainly adopts physical sputtering film-forming process, and the film forming thickness of first layer metal layer 103 is
sputter temperature is 10 ~ 500 DEG C, and pressure is at 1 ~ 10torr;
3) etch away a part of first layer metal layer 103 by methods such as etchings, before and after etching, the Film Thickness Ratio of first layer metal layer 103 is 100:90-1000:999; The method of described etching of first layer metal level 103 can be selected from dry etching, wet etching one or several, in the present embodiment, the method of described etching of first layer metal level 103 adopts the plasma etching method in dry etching, the metal oxide film on removing surface, etching temperature is 10 ~ 500 DEG C, etching pressure is at 1 ~ 10torr, and etch thicknesses is
this step improves the crystal morphology on first layer metal layer 103 surface by etching mode;
4) on first layer metal layer 103, second layer metal layer 104 and second layer barrier layer 105 is formed successively; This step mainly adopts physical sputtering film-forming process, and the film forming thickness of second layer metal layer 104 is
sputter temperature is 10 ~ 500 DEG C, and pressure is at 1 ~ 10torr: second layer barrier layer 105 is the composite material of Ti and TiN, and the film forming thickness on second layer barrier layer 105 is
sputter temperature is 10 ~ 500 DEG C, and pressure is at 1 ~ 10torr;
5) pattern etching forms metal wire, and lithographic method comprises dry etching and wet etching.
Metal described in the inventive method can adopt metallic aluminium.The present invention is by increasing the etch step of metal level, i.e. above-mentioned steps 3), change first layer metal layer 103 surface crystal film surface appearance, thus improve the growth of second layer metal layer 104 film forming trend; When step 5) metal level etches, owing to avoiding the growth of metal level trend, metallic aluminium etching residue can be reduced, prevent the formation of metal stain in etching groove, effectively improve the shorted devices because stain causes, improve the package quality of device.As compared to conventional metals line film forming process (see Fig. 4 A and Fig. 4 C), adopt the inventive method to make to etch the residual obviously minimizing of metallic aluminium in later metal scribe line, also can avoid the formation (see Fig. 4 B and Fig. 4 D) of metal stain in etching groove.
Claims (7)
1. a metal wire film forming process, is characterized in that, mainly comprises following steps:
1) on substrate, ground floor barrier layer is formed;
2) on ground floor barrier layer, first layer metal layer is formed;
3) a part of first layer metal layer is etched away;
4) second layer metal layer and second layer barrier layer is formed successively;
5) pattern etching forms metal wire.
2. a kind of metal wire film forming process according to claim 1, is characterized in that, in step 1), described ground floor barrier layer is the composite material of TiN or Ti and TiN, and its film forming thickness is
3. a kind of metal wire film forming process according to claim 1, is characterized in that, in step 2) in, describedly on ground floor barrier layer, form first layer metal layer, mainly adopt physical sputtering film-forming process, film forming thickness is
sputter temperature is 10 ~ 500 DEG C, and pressure is at 1 ~ 10torr.
4. a kind of metal wire film forming process according to claim 1, is characterized in that, in step 3), the method for described etching of first layer metal level be selected from dry etching, wet etching one or several, etch thicknesses is
5. a kind of metal wire film forming process according to claim 4, is characterized in that, in step 3), before and after etching, the Film Thickness Ratio of first layer metal layer is 100:90-1000:999; The method of described etching of first layer metal level adopts the plasma etching method in dry etching, the metal oxide film on removing surface, and etching temperature is 10 ~ 500 DEG C, and etching pressure is at 1 ~ 10torr; This step improves the crystal morphology on first layer metal layer surface by etching mode.
6. a kind of metal wire film forming process according to claim 1, is characterized in that, in step 4), described formation second layer metal layer and second layer barrier layer, main employing physical sputtering film-forming process, second layer metal layer film forming thickness is
sputter temperature is 10 ~ 500 DEG C, and pressure is at 1 ~ 10torr: second layer barrier material is the composite material of Ti and TiN, and the film forming thickness on second layer barrier layer is
sputter temperature is 10 ~ 500 DEG C, and pressure is at 1 ~ 10torr.
7. a kind of metal wire film forming process according to claim 1, is characterized in that, in step 5), the lithographic method of described pattern etching comprises dry etching and wet etching.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201310227238.3A CN104241191B (en) | 2013-06-07 | 2013-06-07 | A kind of metal wire film forming process |
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| CN201310227238.3A CN104241191B (en) | 2013-06-07 | 2013-06-07 | A kind of metal wire film forming process |
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| CN104241191A true CN104241191A (en) | 2014-12-24 |
| CN104241191B CN104241191B (en) | 2017-06-06 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104538323A (en) * | 2014-12-29 | 2015-04-22 | 上海华虹宏力半导体制造有限公司 | Pin line manufacturing method |
| US20220109241A1 (en) * | 2018-12-29 | 2022-04-07 | Nuctech Company Limited | Terahertz mixer, method of manufacturing terahertz mixer, and electronic device including terahertz mixer |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05326385A (en) * | 1992-05-25 | 1993-12-10 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
| JP4209212B2 (en) * | 2003-01-30 | 2009-01-14 | Ｎｅｃエレクトロニクス株式会社 | Manufacturing method of semiconductor device |
| KR100790245B1 (en) * | 2006-12-07 | 2008-01-02 | 동부일렉트로닉스 주식회사 | Method for forming metal wire in semiconductr device |
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2013
- 2013-06-07 CN CN201310227238.3A patent/CN104241191B/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104538323A (en) * | 2014-12-29 | 2015-04-22 | 上海华虹宏力半导体制造有限公司 | Pin line manufacturing method |
| US20220109241A1 (en) * | 2018-12-29 | 2022-04-07 | Nuctech Company Limited | Terahertz mixer, method of manufacturing terahertz mixer, and electronic device including terahertz mixer |
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| Publication number | Publication date |
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| CN104241191B (en) | 2017-06-06 |
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