CN104779149A - Manufacturing method of metal electrode of semiconductor device - Google Patents
Manufacturing method of metal electrode of semiconductor device Download PDFInfo
- Publication number
- CN104779149A CN104779149A CN201410018125.7A CN201410018125A CN104779149A CN 104779149 A CN104779149 A CN 104779149A CN 201410018125 A CN201410018125 A CN 201410018125A CN 104779149 A CN104779149 A CN 104779149A
- Authority
- CN
- China
- Prior art keywords
- film
- metal electrode
- semiconductor device
- titanium
- production method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 29
- 239000002184 metal Substances 0.000 title claims abstract description 29
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 24
- 239000004065 semiconductor Substances 0.000 title claims abstract description 24
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 claims abstract description 41
- 238000000034 method Methods 0.000 claims abstract description 24
- 238000005516 engineering process Methods 0.000 claims abstract description 13
- 238000001704 evaporation Methods 0.000 claims abstract description 13
- 230000008020 evaporation Effects 0.000 claims abstract description 13
- 238000001816 cooling Methods 0.000 claims abstract description 4
- 238000004544 sputter deposition Methods 0.000 claims abstract description 4
- 238000001039 wet etching Methods 0.000 claims description 5
- 229910052736 halogen Inorganic materials 0.000 claims description 4
- 150000002367 halogens Chemical class 0.000 claims description 4
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 abstract description 16
- 229910052804 chromium Inorganic materials 0.000 abstract description 15
- 239000011651 chromium Substances 0.000 abstract description 15
- 229910001080 W alloy Inorganic materials 0.000 abstract description 8
- 239000010931 gold Substances 0.000 abstract description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052737 gold Inorganic materials 0.000 abstract description 5
- 230000005856 abnormality Effects 0.000 description 7
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 239000007788 liquid Substances 0.000 description 3
- 230000002159 abnormal effect Effects 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 210000000746 body region Anatomy 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The invention discloses a manufacturing method of a metal electrode of a semiconductor device. The method comprises the following steps of forming a titanium tungsten alloy film, forming a gold film on the titanium tungsten alloy film, placing a film body formed by the titanium tungsten alloy film and the gold film in an environment with temperature greater than 400 DEG C, keeping for at least 30min, and then performing cooling to obtain the metal electrode. According to the method, traditional chromium is replaced with a titanium tungsten alloy, and a chromium evaporation technology is replaced with a titanium tungsten alloy sputtering technology, so that a technological process is more reliable, easy and simple; abnormities such as frequent frying during chromium evaporation are reduced and avoided; and a product has better adhesiveness compared with the traditional product.
Description
Technical field
The present invention relates to technical field of semiconductor device, particularly a kind of production method for metal electrode of semiconductor device.
Background technology
In more MEMS, as microphone products, upper/lower electrode is generally make with metallic Gold material, but single layer of gold is easily peeled off, so be all adopt layers of chrome to add golden film usually.Specific embodiment is first adopt evaporation technology to form chromium film, then adopts evaporation technology to form golden film, but evaporation chromium process is very difficult, and often occur during evaporation chromium complaining and quarrel loudly etc. abnormal, process abnormality rate is too high.
Summary of the invention
Based on this, be necessary the production method for metal electrode providing a kind of semiconductor device, the method can significantly reduce process abnormality rate.
A production method for metal electrode for semiconductor device, comprises the following steps:
Form titanium-tungsten film;
Described titanium-tungsten film forms golden film;
The film body formed by described titanium-tungsten film and golden film is placed under temperature is greater than the environment of 400 DEG C, and keeps being no less than 30 minutes, then cool, finally obtain metal electrode.
Wherein in an embodiment, sputtering technology is adopted to form titanium-tungsten film.
Wherein in an embodiment, described titanium-tungsten film thickness is 3nm ~ 15nm.
Wherein in an embodiment, evaporation technology is adopted to form golden film on described titanium-tungsten film.
Wherein in an embodiment, described golden film thickness is 50nm ~ 150nm.
Wherein in an embodiment, under the film body formed by described titanium-tungsten film and golden film is placed in the environment of 420 DEG C, and keep being no less than 30 minutes, then cool.
Wherein in an embodiment, the film body formed is placed under temperature is greater than the environment of 400 DEG C, and keeps 55 ~ 65 minutes, then cool by described titanium-tungsten film and golden film.
Wherein in an embodiment, after described film body cooling, wet etching method is adopted to be removed by the redundance of described film body.
Wherein in an embodiment, after adopting wet etching method to be removed by the redundance of described film body, the halogen remaining in described film body is removed.
Wherein in an embodiment, described environment is nitrogen atmosphere environment.
The production method for metal electrode of above-mentioned semiconductor device and the metal electrode of semiconductor device, titanium-tungsten is adopted to replace chromium to do the metal electrode of semiconductor device, the chromium evaporation technology that process abnormality rate is high need not be adopted, improve the stability of overall manufacturing process, significantly reduce process abnormality rate.Add the manufacturing process of golden film relative to chromium film, titanium-tungsten film of the present invention adds that the manufacturing process of golden film makes product have better adhesiveness through high temperature alloy process.
Accompanying drawing explanation
Fig. 1 is the flow chart of the present invention's wherein embodiment.
Embodiment
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in detail.
Fig. 1 is the flow chart of one embodiment of the invention, comprising:
Step S100: need the surface forming metal electrode to form titanium-tungsten film at semiconductor device.Adopt sputtering technology to form titanium tungsten (TiW) alloy film, titanium-tungsten film thickness is 3nm ~ 15nm.Sputtered titanium tungsten alloy technique is become from traditional evaporation chromium process, sputtered titanium tungsten alloy technique comparatively evaporates chromium process relatively more reliably and easily simple, often occur when reducing and avoid evaporation chromium complaining and quarrel loudly etc. abnormal, adopt sputtered titanium tungsten alloy technique can significantly reduce process abnormality rate.
Step S110: form golden film on titanium-tungsten film.Adopt evaporation technology on titanium-tungsten film, form gold (Au) film, golden film thickness is 50nm ~ 150nm.
Step S120: the film body formed by titanium-tungsten film and golden film is placed under temperature is greater than the nitrogen atmosphere environment of 400 DEG C, and keep being no less than 30 minutes, be preferably and keep being no less than 30 minutes under the environment of 420 DEG C, be preferably maintenance 55 ~ 65 minutes, be more preferably maintenance 60 minutes, then cool.Under nitrogen atmosphere environment, titanium-tungsten film and golden film, through high temperature alloy, can increase considerably the adhesiveness between titanium-tungsten film and golden film and between titanium-tungsten film and semi-conducting material, reduce electrode peeling phenomenon.
After film body cooling, wet etching method is adopted to be removed by the redundance of film body, to form required film body region.After removing unnecessary film body, carry out halogen Transformatin with pure water or akaline liquid to residue film body, removed by the halogen remaining in film body, akaline liquid is preferably the akaline liquid of pH value between 9 ~ 12, such as ammoniacal liquor.
Finally, the metal electrode comprising titanium-tungsten film and golden film is just obtained.
In the present embodiment, the titanium-tungsten film thickness of metal electrode is 3nm, and golden film thickness is 100nm.In other embodiments, the titanium-tungsten film thickness of metal electrode is 5nm, and golden film thickness is 80nm; Or the titanium-tungsten film thickness of metal electrode is 10nm, and golden film thickness is 50nm.
The production method for metal electrode of above-mentioned semiconductor device, adopts titanium-tungsten to replace chromium to do the metal electrode of semiconductor device, need not adopt the chromium evaporation technology that process abnormality rate is high, improve the stability of overall manufacturing process, significantly reduce process abnormality rate.Add the manufacturing process of golden film relative to chromium film, titanium-tungsten film of the present invention adds that the manufacturing process of golden film makes product have better adhesiveness through high temperature alloy process.
The above embodiment only have expressed several execution mode of the present invention, and it describes comparatively concrete and detailed, but therefore can not be interpreted as the restriction to the scope of the claims of the present invention.It should be pointed out that for the person of ordinary skill of the art, without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection range of patent of the present invention should be as the criterion with claims.
Claims (10)
1. a production method for metal electrode for semiconductor device, is characterized in that, comprises the steps:
Form titanium-tungsten film;
Described titanium-tungsten film forms golden film;
The film body formed by described titanium-tungsten film and golden film is placed under temperature is greater than the environment of 400 DEG C, and keeps being no less than 30 minutes, then cool, finally obtain metal electrode.
2. the production method for metal electrode of semiconductor device according to claim 1, is characterized in that, adopts sputtering technology to form titanium-tungsten film.
3. the production method for metal electrode of semiconductor device according to claim 1, is characterized in that, described titanium-tungsten film thickness is 3nm ~ 15nm.
4. the production method for metal electrode of semiconductor device according to claim 1, is characterized in that, adopts evaporation technology to form golden film on described titanium-tungsten film.
5. the production method for metal electrode of semiconductor device according to claim 1, is characterized in that, described golden film thickness is 50nm ~ 150nm.
6. the production method for metal electrode of semiconductor device according to claim 1, is characterized in that, under the film body formed is placed in the environment of 420 DEG C, and keeps being no less than 30 minutes, then cool by described titanium-tungsten film and golden film.
7. the production method for metal electrode of semiconductor device according to claim 1, is characterized in that, is placed in by the film body formed under temperature is greater than the environment of 400 DEG C, and keeps 55 ~ 65 minutes, then cool by described titanium-tungsten film and golden film.
8. the production method for metal electrode of semiconductor device according to claim 1, is characterized in that, after described film body cooling, adopts wet etching method to be removed by the redundance of described film body.
9. the production method for metal electrode of semiconductor device according to claim 8, is characterized in that, after adopting wet etching method to be removed by the redundance of described film body, is removed by the halogen remaining in described film body.
10. the production method for metal electrode of the semiconductor device according to any one of claim 1 ~ 9, is characterized in that, described environment is nitrogen atmosphere environment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410018125.7A CN104779149A (en) | 2014-01-15 | 2014-01-15 | Manufacturing method of metal electrode of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410018125.7A CN104779149A (en) | 2014-01-15 | 2014-01-15 | Manufacturing method of metal electrode of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104779149A true CN104779149A (en) | 2015-07-15 |
Family
ID=53620558
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410018125.7A Pending CN104779149A (en) | 2014-01-15 | 2014-01-15 | Manufacturing method of metal electrode of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104779149A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109576655A (en) * | 2018-12-29 | 2019-04-05 | 广东爱晟电子科技有限公司 | A kind of highly reliable Ti/W-Cu-Au combination electrode heat sensitive chip of high-precision |
| CN110033993A (en) * | 2019-04-03 | 2019-07-19 | 成都宏明电子科大新材料有限公司 | A kind of midget relay and manufacturing method |
| CN113219680A (en) * | 2021-05-08 | 2021-08-06 | 中国科学院半导体研究所 | Adjustable delay line chip and manufacturing method thereof |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4880708A (en) * | 1988-07-05 | 1989-11-14 | Motorola, Inc. | Metallization scheme providing adhesion and barrier properties |
| JPH04162531A (en) * | 1990-10-25 | 1992-06-08 | Iwatsu Electric Co Ltd | Manufacture of semiconductor device |
| JPH05160133A (en) * | 1991-12-05 | 1993-06-25 | Mitsubishi Electric Corp | Electrode structure of semiconductor device |
| US5422307A (en) * | 1992-03-03 | 1995-06-06 | Sumitomo Electric Industries, Ltd. | Method of making an ohmic electrode using a TiW layer and an Au layer |
| CN1215914A (en) * | 1997-06-24 | 1999-05-05 | 松下电子株式会社 | Semiconductor device and method for fabricating the same |
| JP2007287984A (en) * | 2006-04-18 | 2007-11-01 | Seiko Epson Corp | Semiconductor device |
| CN101156253A (en) * | 2005-04-08 | 2008-04-02 | 三菱电线工业株式会社 | Semiconductor element, and method for manufacturing it |
| CN102117699A (en) * | 2010-12-15 | 2011-07-06 | 中国科学院上海微系统与信息技术研究所 | Silicon-based Al2O3 film chip capacitor and making method thereof |
-
2014
- 2014-01-15 CN CN201410018125.7A patent/CN104779149A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4880708A (en) * | 1988-07-05 | 1989-11-14 | Motorola, Inc. | Metallization scheme providing adhesion and barrier properties |
| JPH04162531A (en) * | 1990-10-25 | 1992-06-08 | Iwatsu Electric Co Ltd | Manufacture of semiconductor device |
| JPH05160133A (en) * | 1991-12-05 | 1993-06-25 | Mitsubishi Electric Corp | Electrode structure of semiconductor device |
| US5422307A (en) * | 1992-03-03 | 1995-06-06 | Sumitomo Electric Industries, Ltd. | Method of making an ohmic electrode using a TiW layer and an Au layer |
| CN1215914A (en) * | 1997-06-24 | 1999-05-05 | 松下电子株式会社 | Semiconductor device and method for fabricating the same |
| CN101156253A (en) * | 2005-04-08 | 2008-04-02 | 三菱电线工业株式会社 | Semiconductor element, and method for manufacturing it |
| JP2007287984A (en) * | 2006-04-18 | 2007-11-01 | Seiko Epson Corp | Semiconductor device |
| CN102117699A (en) * | 2010-12-15 | 2011-07-06 | 中国科学院上海微系统与信息技术研究所 | Silicon-based Al2O3 film chip capacitor and making method thereof |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109576655A (en) * | 2018-12-29 | 2019-04-05 | 广东爱晟电子科技有限公司 | A kind of highly reliable Ti/W-Cu-Au combination electrode heat sensitive chip of high-precision |
| CN110033993A (en) * | 2019-04-03 | 2019-07-19 | 成都宏明电子科大新材料有限公司 | A kind of midget relay and manufacturing method |
| CN113219680A (en) * | 2021-05-08 | 2021-08-06 | 中国科学院半导体研究所 | Adjustable delay line chip and manufacturing method thereof |
| CN113219680B (en) * | 2021-05-08 | 2023-08-15 | 中国科学院半导体研究所 | Adjustable delay line chip and manufacturing method thereof |
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| C06 | Publication | ||
| PB01 | Publication | ||
| EXSB | Decision made by sipo to initiate substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| TA01 | Transfer of patent application right | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20171017 Address after: 214028 Xinzhou Road, Wuxi national hi tech Industrial Development Zone, Jiangsu, China, No. 8 Applicant after: Wuxi Huarun Shanghua Technology Co., Ltd. Address before: 214028 Xinzhou Road, Wuxi national hi tech Industrial Development Zone, Jiangsu, China, No. 8 Applicant before: Wuxi CSMC Semiconductor Co., Ltd. |
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| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20150715 |