CN109576655A - A kind of highly reliable Ti/W-Cu-Au combination electrode heat sensitive chip of high-precision - Google Patents

A kind of highly reliable Ti/W-Cu-Au combination electrode heat sensitive chip of high-precision Download PDF

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Publication number
CN109576655A
CN109576655A CN201811629850.2A CN201811629850A CN109576655A CN 109576655 A CN109576655 A CN 109576655A CN 201811629850 A CN201811629850 A CN 201811629850A CN 109576655 A CN109576655 A CN 109576655A
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heat sensitive
layer
combination electrode
highly reliable
ceramics substrate
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贺晓东
段兆祥
杨俊�
唐黎民
柏琪星
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Guangdong Aisheng Electronic Technology Co Ltd
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Guangdong Aisheng Electronic Technology Co Ltd
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Priority to CN201811629850.2A priority Critical patent/CN109576655A/en
Publication of CN109576655A publication Critical patent/CN109576655A/en
Priority to PCT/CN2019/094984 priority patent/WO2020134016A1/en
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/18—Metallic material, boron or silicon on other inorganic substrates
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
    • G01K7/22—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a non-linear resistance, e.g. thermistor

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Thermistors And Varistors (AREA)

Abstract

The present invention relates to a kind of highly reliable Ti/W-Cu-Au combination electrode heat sensitive chips of high-precision, the heat sensitive chip includes thermal sensitive ceramics substrate and two combination electrodes being respectively arranged on two surfaces of the thermal sensitive ceramics substrate, and the combination electrode is successively laminated on the thermal sensitive ceramics substrate surface from inside to outside by titanium tungsten layer, layers of copper and layer gold.The invention further relates to the preparation methods of the highly reliable Ti/W-Cu-Au combination electrode heat sensitive chip of the high-precision.The highly reliable Ti/W-Cu-Au combination electrode heat sensitive chip of high-precision of the present invention has many advantages, such as good stability, high reliablity, non-aging, cold-resistant thermal shock.

Description

A kind of highly reliable Ti/W-Cu-Au combination electrode heat sensitive chip of high-precision
Technical field
The present invention relates to electronic component technology fields, more particularly to a kind of highly reliable Ti/W-Cu-Au compound electric of high-precision Pole heat sensitive chip and preparation method thereof.
Background technique
Thermistor chip, abbreviation heat sensitive chip are widely used in various temperature sensings, temperature-compensating, temperature control electricity Lu Zhong plays the central role by the variables transformations of temperature at required electronic signal in circuit.
As shown in Figure 1, existing thermistor chip includes that thermal sensitive ceramics substrate 1 ' and two are respectively arranged on the heat Metal electrode 2 ' on quick 1 ' two surface of ceramic substrate, the metal electrode 2 ' is usually silver electrode.Existing thermistor core The preparation process of piece are as follows: thermal sensitive ceramics powder ingredient → ball milling → isostatic pressing → sintering ceramics ingot → slice → silk-screen printing Method prints silver paste → drying → silver ink firing → cutting-up.
However, using silver electrode and using silk screen print method, there are the following problems:
1) silver paste is easily contaminated in silk-screen printing and drying course, and obtained silver electrode itself is also easy oxygen Change, jaundice nigrescence, causes the stability of product and reliability poor；
2) preparation silver paste early period and later period drying silver paste, the process of sintering silver electrode are relatively complicated；
3) silver electrode thickness degree made from printing is larger and covers on the surface of thermal sensitive ceramics substrate unevenly, in cutting-up It is easy peeling in the process and generates burr, silver paste material loss is more；
4) crystal form can recrystallize silver layer when sintering at high temperature, so that performance changes, cause under product electric property Drop；
5) gas discharged during high temperature silver ink firing pollutes the environment.
Summary of the invention
Based on this, the object of the present invention is to provide a kind of highly reliable Ti/W-Cu-Au combination electrode temperature-sensitive cores of high-precision Piece has many advantages, such as good stability, high reliablity, non-aging, cold-resistant thermal shock.
The technical solution adopted by the present invention is as follows:
A kind of highly reliable Ti/W-Cu-Au combination electrode heat sensitive chip of high-precision, including thermal sensitive ceramics substrate and two points Not She Yu combination electrode on two surfaces of the thermal sensitive ceramics substrate, the combination electrode is by titanium tungsten layer, layers of copper and layer gold It is successively laminated on the thermal sensitive ceramics substrate surface from inside to outside.
Heat sensitive chip of the invention uses TiW-Cu-Au combination electrode, and wherein titanium tungsten layer (TiW) is main as bottom electrode It plays a transition role, can be combined well with thermal sensitive ceramics substrate and certain barrier effect；Layers of copper (Cu) is as blocking Layer for stopping the destruction of outer bound pair transition zone, and has welding effect；Layer gold (Au) is both welding layer and protective layer, Stability is high, can prevent oxidation, anticorrosive, tamper-proof, high temperature resistant.
The compound electric being made on thermal sensitive ceramics substrate surface is laminated in titanium tungsten layer, layers of copper and layer gold by the present invention from inside to outside Pole can effectively promote stability, temperature tolerance, corrosion resistance, the anti-destructive of heat sensitive chip, hence it is evident that improve reliability, moreover it is possible to The electrode material cost of chip is controlled, the highly reliable Ti/W-Cu-Au combination electrode heat sensitive chip of high-precision obtained has stability The advantages of good, high reliablity, non-aging, cold-resistant thermal shock.
Further, the titanium tungsten layer uses the mass ratio of titanium and tungsten for the titanium-tungsten of 1:9, and the titanium tungsten layer of the composition is suitable The surface state of thermal sensitive ceramics substrate is closed, it is almost the same with the coefficient of expansion of thermal sensitive ceramics substrate, it can be with thermal sensitive ceramics substrate Surface is combined closely, and the reliability for improving product is conducive to.
Further, the titanium tungsten layer with a thickness of 0.01~1 micron.
Further, the layers of copper with a thickness of 0.01~2 micron.
Further, the layer gold with a thickness of 0.01~1 micron.
In the combination electrode, the too thick then increased costs of the thickness of each metal layer, the titanium tungsten layer too Bao Ze as transition zone The combination of combination electrode and thermal sensitive ceramics substrate is influenced, layers of copper as barrier layer is too thin just not to play barrier effect, as weldering The layer gold for connecing layer and protective layer is too thin, is easy the external world and is easy to damage barrier layer, influences the reliability of product.
Further, the titanium tungsten layer with a thickness of 0.2 micron, the layers of copper with a thickness of 0.4 micron, the layer gold With a thickness of 0.1 micron.Each metal layer accordingly chooses above-mentioned thickness, and the electrical property of product and reliability can be made to reach most preferably, together Shi Youxiao controls material cost.
Further, the titanium tungsten layer, layers of copper and layer gold are all made of sputtering method and are formed.
Relative to silk screen print method, each metal layer is prepared using sputtering method and is had the advantages that
1) sputtering process carries out in vacuum sputtering coating equipment, does not pollute the environment, and cleanliness is high, guarantees clean the surface It is not secondary polluted；
2) many and diverse preparation for eliminating silver electrode stencil, sputtering is completed to put into make in vacuum sputtering equipment With；
3) metal layer thickness that sputtering obtains can reach the 1% of silk-screen silver electrode thickness degree hereinafter, saving material, and sputter Technique is bonded combination electrode tightly with thermal sensitive ceramics substrate, substantially will not peeling or generation burr during cutting-up；
4) sputtering technology is easily controllable, and the metal layer plated film area that vacuum sputtering obtains is big and covering is uniform, makes pottery with temperature-sensitive Ceramic chip is firmly combined, and surface is very fine and close, can effectively prevent extraneous erosion, make product be really achieved high-precision, it is highly reliable, can To prevent performance change caused by silver layer high temperature sintering after silk-screen printing；
5) it does not dry, the process of sintered electrode layer, avoids discharge of noxious gases and pollute air, environment-friendly advantage is prominent.
Another object of the present invention is to provide the highly reliable Ti/W-Cu-Au compound electrics of high-precision described in any of the above embodiments The preparation method of pole heat sensitive chip, the preparation method include the following steps: to divide on two surfaces of the thermal sensitive ceramics substrate of sheet Titanium tungsten layer, layers of copper and layer gold are not set gradually, then the thermal sensitive ceramics substrate is cut into the single heat sensitive chip.
Further, which includes the following steps:
(1) one layer of titanium tungsten layer is sputtered respectively on two surfaces of the thermal sensitive ceramics substrate of sheet；
(2) one layer of layers of copper is sputtered respectively on the titanium tungsten layer on two surface of thermal sensitive ceramics substrate that step (1) obtains；
(3) one layer of layer gold is sputtered respectively in the layers of copper on two surface of thermal sensitive ceramics substrate that step (2) obtains；
(4) resistivity for the thermal sensitive ceramics substrate that testing procedure (3) obtains, according to test result and required heat sensitive chip Computing the resistor value goes out the size of single heat sensitive chip, then carries out cutting-up to the thermal sensitive ceramics substrate, obtains single institute State heat sensitive chip.
Further, step (1)~(3) are using vacuum sputtering film plating machine in argon gas as implementing under conditions of working gas Sputtering.
In order to better understand and implement, the invention will now be described in detail with reference to the accompanying drawings.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of existing thermistor chip；
Fig. 2 is the structural schematic diagram of the highly reliable Ti/W-Cu-Au combination electrode heat sensitive chip of high-precision of the invention；
Fig. 3 is the preparation flow figure of the highly reliable Ti/W-Cu-Au combination electrode heat sensitive chip of high-precision of the invention；
Fig. 4 is vacuum sputtering schematic diagram.
Specific embodiment
Referring to Fig. 2, it shows for the structure of the highly reliable Ti/W-Cu-Au combination electrode heat sensitive chip of high-precision of the invention It is intended to.
The highly reliable Ti/W-Cu-Au combination electrode heat sensitive chip of high-precision of the invention includes thermal sensitive ceramics substrate 1 and two Combination electrode 2 on a two surfaces for being respectively arranged on the thermal sensitive ceramics substrate 1, the combination electrode 2 are by titanium tungsten layer 21, copper Layer 22 and layer gold 23 are successively laminated on 1 surface of thermal sensitive ceramics substrate from inside to outside.
Specifically, the titanium tungsten layer 21 uses the mass ratio of titanium and tungsten for the titanium-tungsten of 1:9, with a thickness of 0.01~1 Micron；The layers of copper 22 with a thickness of 0.01~2 micron；The layer gold 23 with a thickness of 0.01~1 micron.Preferably, described Titanium tungsten layer 21 with a thickness of 0.2 micron, the layers of copper 22 with a thickness of 0.4 micron, the layer gold 23 with a thickness of 0.1 micron.
The titanium tungsten layer 21, layers of copper 22 and layer gold 23 are all made of sputtering method and are formed.
Fig. 3-4 is please referred to, Fig. 3 is the preparation of the highly reliable Ti/W-Cu-Au combination electrode heat sensitive chip of high-precision of the invention Flow chart, Fig. 4 are vacuum sputtering schematic diagram.
The preparation method of the highly reliable Ti/W-Cu-Au combination electrode heat sensitive chip of the high-precision carries out as follows:
S1: it prepares thermal sensitive ceramics substrate: being routinely formulated to obtain thermal sensitive ceramics powder, such as NTC thermal sensitive ceramics powder, then Ball milling, isostatic pressing, sintering, slice are carried out to thermal sensitive ceramics powder, the thermal sensitive ceramics substrate of sheet can be obtained.
S2: primary cleaning:
The thermal sensitive ceramics substrate obtained using specific cleaning solution processing step S1 reuses ultrasonic drilling machine cleaning, cleaning Time are as follows: 5 ± 1 minutes, then dry, drying temperature are as follows: 100 ± 5 DEG C, drying time are as follows: 30 ± 5 minutes.
S3: secondary cleaning:
The thermal sensitive ceramics substrate that step S2 is once cleaned is put into plasma cleaner and carries out secondary cleaning, is cleaned Time are as follows: 5 ± 1 minutes, drying temperature are as follows: 100 ± 5 DEG C, drying time are as follows: 30 ± 5 minutes, while activating surface.
S4: sputtering titanium tungsten layer 21:
Vacuum sputtering film plating machine is first evacuated down to processing range, is re-filled with argon gas as working gas, with titanium and tungsten Mass ratio is the titanium-tungsten of 1:9 as target, under electric field action, Ar+Accelerate bombardment target, target atom is splashed to step On the thermal sensitive ceramics substrate that rapid S3 is obtained, one layer of titanium tungsten layer 21 is sputtered respectively on two surfaces of thermal sensitive ceramics substrate, sputtering is thick Degree is 0.01~2 micron.
S5: sputtering layers of copper 22:
Vacuum sputtering film plating machine is first evacuated down to processing range, is re-filled with argon gas as working gas, using copper as target Material, under electric field action, Ar+Accelerate bombardment target, target atom is splashed on the thermal sensitive ceramics substrate that step S4 is obtained, One layer of layers of copper 22 is sputtered on 21 surface of titanium tungsten layer on two surface of thermal sensitive ceramics substrate respectively, is sputtered with a thickness of 0.01~2 micron.
S6: sputtering layer gold 23:
Vacuum sputtering film plating machine is first evacuated down to processing range, is re-filled with argon gas as working gas, using gold as target Material, under electric field action, Ar+Accelerate bombardment target, target atom is splashed on the thermal sensitive ceramics substrate that step S5 is obtained, One layer of layer gold 23 is sputtered on 22 surface of layers of copper on two surface of thermal sensitive ceramics substrate respectively, is sputtered with a thickness of 0.01~1 micron.
The resistivity of S7: testing procedure S6 obtained thermal sensitive ceramics substrate, according to test result and required heat sensitive chip Computing the resistor value goes out the size of single heat sensitive chip, then carries out cutting-up to the thermal sensitive ceramics substrate, obtains single institute State heat sensitive chip.
S8: testing, sorting:
Resistance value test is carried out one by one to the heat sensitive chip that step S7 is produced in batches using thermistor tester 3, Undesirable product selecting is eliminated.
The titanium tungsten layer of difference composition tests the reliability effect of heat sensitive chip
In the highly reliable Ti/W-Cu-Au combination electrode heat sensitive chip of high-precision of the invention, the titanium tungsten layer uses titanium and tungsten Mass ratio be 1:9 titanium-tungsten, can be combined well with the thermal sensitive ceramics substrate surface of sinter molding, and other form Titanium tungsten layer and thermal sensitive ceramics substrate will appear in conjunction with it is poor, stress is big the disadvantages of.
Aging failtests is carried out to 3 groups of highly reliable Ti/W-Cu-Au combination electrode heat sensitive chips of high-precision respectively, with Verify the influence to chip product of the titanium tungsten layer of different compositions, the titanium tungsten layer of the 1st set product use the mass ratio of titanium and tungsten for The titanium-tungsten of 1:9, the titanium tungsten layer of the 2nd set product use the mass ratio of titanium and tungsten for the titanium-tungsten of 2:8, the 3rd set product Titanium tungsten layer uses the mass ratio of titanium and tungsten for the titanium-tungsten of 3:7, and the quantity of every set product is 10.
Aging failtests are as follows: be placed in sample in 100 DEG C of baking ovens aging 1000 hours, according to the forward and backward sample of experiment Resistance value, calculated resistance varying-ratio is aging change rate.
Experimental result is as shown in table 1 below:
The aging failtests result of the heat sensitive chip of 13 kinds of table different titanium tungsten layer compositions
As shown in Table 1 result as it can be seen that the heat sensitive chip containing Ti:W=1:9 titanium tungsten layer before ageing after resistance varying-ratio Only up to 0.24%, and the heat sensitive chip containing Ti:W=2:8 titanium tungsten layer before ageing after resistance varying-ratio be up to 0.44%, the heat sensitive chip containing Ti:W=3:7 titanium tungsten layer before ageing after resistance varying-ratio be up to 0.98%, explanation Ti:W=2:8 titanium tungsten layer is more suitable the surface state of thermal sensitive ceramics substrate, can combine closely with thermal sensitive ceramics substrate surface, Be conducive to improve the reliability of product.
The performance comparison of conventional thermistor chip and heat sensitive chip of the present invention is tested
It is 3950 by about 500 Ω m, B value of resistivity, uses traditional silk-screened respectively with a thickness of the ceramic substrate of 0.5mm Method and vacuum sputtering make its surface electrode, wherein stencil is made respectively on two surface of ceramic substrate with a thickness of 30 μm of silver Electrode, vacuum sputtering make respectively on ceramic substrate two surface and are laminated from inside to outside by titanium tungsten layer, layers of copper and layer gold Combination electrode, and titanium tungsten layer, with a thickness of 0.2 μm, copper layer thickness is 0.4 μm, and layer gold is with a thickness of 0.1 μm, then with 1mm*1mm's Size carries out cutting-up, obtains the conventional thermistor chip of stencil preparation and the high-precision of the invention of vacuum sputtering preparation Highly reliable Ti/W-Cu-Au combination electrode heat sensitive chip.
The conventional thermistor chip and the highly reliable Ti/W-Cu-Au of high-precision of the invention that test cutting-up obtains respectively are multiple The resistance value and B value of composite electrode heat sensitive chip, and carry out the aging failtests and 1000 100 DEG C of circulations-of 100 DEG C/1000H 0 DEG C of cooling thermal impact experiment.
Aging failtests are as follows: be placed in sample in 100 DEG C of baking ovens aging 1000 hours, according to the forward and backward sample of experiment Resistance value, calculated resistance varying-ratio is aging change rate.
Cooling thermal impact experiment are as follows: sample is alternately placed in 100 DEG C with 0 DEG C of gas, is recycled 1000 times, according to before experiment, The resistance value of sample afterwards, calculated resistance varying-ratio are cooling thermal impact change rate.
Obtain experimental data as shown in table 2 below:
The performance comparison test result of table 2 conventional thermistor chip and combination electrode heat sensitive chip of the present invention
The resistance value of traditional die and B value are more dispersed it can be seen from the data of table 2, and precision is relatively low, aging with it is cold and hot The change rate of impact is also larger, and reliability is lower；And the resistance value of Ti/W-Cu-Au combination electrode heat sensitive chip of the invention and B value It concentrates very much, the change rate of aging and cooling thermal impact is also very small, and it is highly reliable to be really achieved high-precision.
The embodiments described above only express several embodiments of the present invention, and the description thereof is more specific and detailed, but simultaneously It cannot therefore be construed as limiting the scope of the patent.It should be pointed out that coming for those of ordinary skill in the art It says, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to protection of the invention Range.

Claims (10)

1. a kind of highly reliable Ti/W-Cu-Au combination electrode heat sensitive chip of high-precision, it is characterised in that: including thermal sensitive ceramics substrate And two combination electrodes being respectively arranged on two surfaces of the thermal sensitive ceramics substrate, the combination electrode be by titanium tungsten layer, Layers of copper and layer gold are successively laminated on the thermal sensitive ceramics substrate surface from inside to outside.
2. the highly reliable Ti/W-Cu-Au combination electrode heat sensitive chip of high-precision according to claim 1, it is characterised in that: institute State the titanium-tungsten that titanium tungsten layer uses the mass ratio of titanium and tungsten as 1:9.
3. the highly reliable Ti/W-Cu-Au combination electrode heat sensitive chip of high-precision according to claim 1 or 2, feature exist In: the titanium tungsten layer with a thickness of 0.01~1 micron.
4. the highly reliable Ti/W-Cu-Au combination electrode heat sensitive chip of high-precision according to claim 1 or 2, feature exist In: the layers of copper with a thickness of 0.01~2 micron.
5. the highly reliable Ti/W-Cu-Au combination electrode heat sensitive chip of high-precision according to claim 1 or 2, feature exist In: the layer gold with a thickness of 0.01~1 micron.
6. the highly reliable Ti/W-Cu-Au combination electrode heat sensitive chip of high-precision according to claim 1 or 2, feature exist In: the titanium tungsten layer with a thickness of 0.2 micron, the layers of copper with a thickness of 0.4 micron, the layer gold with a thickness of 0.1 micron.
7. the highly reliable Ti/W-Cu-Au combination electrode heat sensitive chip of high-precision according to claim 1 or 2, feature exist In: the titanium tungsten layer, layers of copper and layer gold are all made of sputtering method and are formed.
8. the preparation side of the highly reliable Ti/W-Cu-Au combination electrode heat sensitive chip of the described in any item high-precisions of claim 1-7 Method, characterized by the following steps: set gradually respectively on two surfaces of the thermal sensitive ceramics substrate of sheet titanium tungsten layer, Then the thermal sensitive ceramics substrate is cut into the single heat sensitive chip by layers of copper and layer gold.
9. the preparation method of the highly reliable Ti/W-Cu-Au combination electrode heat sensitive chip of high-precision according to claim 8, It is characterized in that: including the following steps:
(1) one layer of titanium tungsten layer is sputtered respectively on two surfaces of the thermal sensitive ceramics substrate of sheet；
(2) one layer of layers of copper is sputtered respectively on the titanium tungsten layer on two surface of thermal sensitive ceramics substrate that step (1) obtains；
(3) one layer of layer gold is sputtered respectively in the layers of copper on two surface of thermal sensitive ceramics substrate that step (2) obtains；
(4) resistivity for the thermal sensitive ceramics substrate that testing procedure (3) obtains, according to the resistance value of test result and required heat sensitive chip The size of single heat sensitive chip is calculated, cutting-up then is carried out to the thermal sensitive ceramics substrate, obtains the single heat Quick chip.
10. the preparation method of the highly reliable Ti/W-Cu-Au combination electrode heat sensitive chip of high-precision according to claim 9, Be characterized in that: step (1)~(3) are sputtered using vacuum sputtering film plating machine at argon gas as implementation under conditions of working gas.
CN201811629850.2A 2018-12-29 2018-12-29 A kind of highly reliable Ti/W-Cu-Au combination electrode heat sensitive chip of high-precision Pending CN109576655A (en)

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PCT/CN2019/094984 WO2020134016A1 (en) 2018-12-29 2019-07-08 High-precision high-reliability ti/w-cu-au composite electrode thermosensitive chip

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Application publication date: 20190405