JP3518843B2 - Metallized substrate - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION [0001] TECHNICAL FIELD The present invention relates to a through-hole for a sintered body.
Relative to aluminum nitride sintered body filled with conductive layer
Conductive patterns are formed on both sides of
At least a part of the conductive pattern is electrically connected by the conductive layer.
The present invention relates to metallized substrates connected to each other. Especially high
Conductive layer with thermal conductivity and filled in through holes and nitrided
Good adhesion of the aluminum sintered body and the conductive layer
On both sides of aluminum nitride sintered body without cracks
A conductive pattern on which conductive patterns are formed;
At least a part of the connection is electrically connected to each other by the conductive layer
Metallized substrate. [0002] 2. Description of the Related Art Sintered aluminum nitride has high thermal conductivity.
High dielectric constant, good electrical insulation, and
Excellent properties such as having the same coefficient of thermal expansion as kon (Si)
Used as a substrate for semiconductor circuit components due to its high quality
I have. A metal layer and a resistor thin film are
Conductive patterns are formed, and the conductive patterns
At least a part of the pattern has a conductive layer
Electrically connected by so-called vias filled with
Aluminum via metallized substrate
Relay and make an electrical connection with the semiconductor external circuit
It is used for substrates for mounting conductors. As one of the methods for forming the via, a simultaneous
A firing method has been performed. The simultaneous firing method involves firing the conductive layer,
This is a method in which sintering of the substrate is performed simultaneously in one firing,
Fewer steps compared to firing the conductive layer after firing
It has an advantageous aspect. However, conventional aluminum nitride
In the simultaneous firing method for minium, firing the conductive layer and sintering the substrate
The sintered body obtained by the restriction of simultaneous
Has a thermal conductivity of at most 170 W / mK at 25 ° C.
there were. On the other hand, aluminum nitride without vias
A two-stage firing method is used as one of the methods for firing (single).
(Japanese Patent Laid-Open No. 5-105525). in this way,
The thermal conductivity of the obtained sintered body is about 200 W / mK at 25 ° C.
To obtain a high thermal conductivity aluminum nitride sintered body
it can. [0005] However, the above two-stage firing
An aluminum nitride sintered body with vias is manufactured by the
Conductive patterns are formed on opposing surfaces using a sintered body of
And at least a portion of the conductive pattern present on both surfaces
Formed to be electrically connected by vias
When a rise substrate is made,
Obtain a sufficiently high adhesion strength with the conductive layer forming the via
There was a problem that it was difficult. Also, aluminum nitride
Cracks or cracks inside the
A) Vias and vias are not
The electrical resistance between the electrical patterns increases,
The adhesion strength between the formed conductive pattern and via decreases
There was a problem. In addition to the above problems, warpage of the substrate
Is also large. Therefore, it has a high thermal conductivity and forms a via.
Adhesion strength between the conductive layer to be formed and the aluminum nitride sintered body
Excellent cracks and cracks inside the aluminum nitride sintered body
No cracks in the area
Development of high aluminum nitride metallized substrate is desired
Was. [0007] The present inventor has solved the above-mentioned problems.
As a result of repeated research to solve it, the metallized substrate described above
Cracks in the vias and cracks in the vias, increasing the board warpage
The finding that addition is caused by the action of carbon after degreasing,
It is necessary to control the residual carbon ratio of the degreased
And cracks inside the aluminum nitride substrate and
It is possible to suppress the occurrence of cracks in the via part and the increase in board warpage.
And the above aluminum nitride sintered body and via
The adhesion strength with the conductive layer to be formed is the residual carbon ratio of the degreased body,
Addition amount of aluminum nitride powder to conductive paste, two-stage baking
By controlling the temperature range of the synthesis method to each specific range
It is strong enough to stabilize and
Thermal conductivity of aluminum nitride metallized substrate
And propose the present invention here.
Reached. That is, the present invention provides an aluminum nitride sintered body
In the through hole100 parts by weight of high melting point metal and aluminum nitride
2 to 10 parts by weightSubstrate filled with conductive layer
, The thermal conductivity of the aluminum nitride sintered body is 190
W / mK or more and conductive with aluminum nitride sintered body
Adhesion strength with the electric layer is 5.0 kg / mm²That is all
On opposite sides of the boardMetal thin filmA pattern is formed,
Exists on both sidesMetal thin filmAt least part of the pattern
Substrates electrically connected to each other by electric layers. [0009] BEST MODE FOR CARRYING OUT THE INVENTION In the present invention, aluminum nitride
Into the through hole of the sintered body100 parts by weight of high melting point metal and nitride
Consisting of 2 to 10 parts by weight of luminiumThe conductive layer is filled
Is a substrate made of aluminum nitride containing so-called vias.
In the union, the size of the through hole is not particularly limited, but the diameter is
0.03 to 0.50 mm, the length and diameter of the through hole
The ratio (length / diameter) is 40 or less. In addition, a conductive layer is formed.
The substance to be formed is not particularly limited as long as it is a high melting point metal,
Usually, high melting point metals such as tungsten and molybdenum
Ri, High2 to 10 parts by weight based on 100 parts by weight of the melting point metal
Contains aluminum nitrideYou.All of the vias that are conductive layers
The volume is the volume of the entire aluminum nitride sintered body including the via
Is not particularly limited, but is usually 0.1 to 2
0%. [0010] Aluminum nitride containing vias according to the present invention
The substrate made of aluminum sintered body is
Aluminum nitride having conductivity of 190 W / mK or more and aluminum nitride
Adhesion strength between the sintered body and the conductive layer is 5.0 kg / mm^Twothat's all
It is characterized by being. The aluminum nitride substrate according to the present invention comprises:
It is a composite system that includes vias made of high melting point metal.
Therefore, it is difficult to accurately evaluate the thermal conductivity of itself.
is there. Therefore, in the present invention, the same raw material, the same degreasing
・ For aluminum nitride substrates without vias for firing batch
The thermal conductivity of the aluminum nitride sintered body of the present invention
Conductivity. In the present invention, the thermal conductivity is
Thermal conductivity measured at 25 ° C. Further, the aluminum nitride firing according to the present invention is performed.
The adhesion strength between the binder and the conductive layer is determined by cutting the substrate at the center of the via.
Cut, mirror-finished this cut surface, and further on the cut surface
After forming a thin film of Ti / Pt / Au on the
Insert the 0.5mm pin vertically so that it contacts the via surface.
When this pin is pulled vertically after soldering to
Refers to the strength measured as the breaking strength. Conventionally, high thermal conductivity of aluminum nitride sintered body
And the adhesion strength between the aluminum nitride sintered body and the conductive layer
It was difficult to achieve high strength at the same time. But the book
The substrate of the present invention is characterized in that the aluminum nitride sintered body has a thermal conductivity of 1
90 W / mK or more and aluminum nitride sintered body
The adhesion strength between the conductive layer and the conductive layer is 5.0 kg / mm^TwoAnd above
Both high thermal conductivity of plate and high strength of adhesion of conductive layer
Excellent substrate. In addition, the manufacturing conditions should be
If you choose from the box, the thermal conductivity of the aluminum nitride sintered body is 2
Aluminum nitride sintered body of not less than 00 W / mK
7.0 kg / mm^TwoThat's it
Has 10.0kg / mm^TwoMore substrates can be obtained
You. In the present invention, on both sides of the substrateConductive pattern
Metal thin film pattern formed asBe done. TheStructure of metal thin film
Known metals can be used without particular limitation.
But titanium (Ti), chromium (Cr), molybdenum
(Mo), tungsten (W), aluminum (A
l), tantalum (Ta), tungsten titanium (W
-Ti), nickel chrome (Ni-Cr), tantalum nitride
(Ta-N) has good adhesion to aluminum nitride substrate.
Because it is good, it is preferably used. [0015] These metals may be used alone or
Alternatively, two or more kinds may be used in combination. Also,
The conductive pattern may be a single layer or two or more layers may be laminated.
May be. When two or more layers are laminated and used,
Metal has good adhesion strength with aluminum nitride substrate
Suitable for the first layer directly in contact with the aluminum nitride substrate
Can be used. Among these, Ti has particularly high adhesion strength.
Is more preferably used in order to stably obtain Ma
When the first layer is used as an adhesive layer,
Although not limited, the adhesion strength is increased by increasing the film thickness.
Reducing reliability and shortening and using film formation time due to thickness reduction
Because of the economic effects of reducing raw materials,
It is used in a film thickness of 0.01 μm to 10 μm, and more preferably 0.1 μm to 10 μm.
It is more preferably used with a film thickness of from 05 μm to 5 μm. Here, the aluminum nitride sintered body and the conductive
The adhesion strength to the turn is determined by the top layer of the conductive pattern
0.5mm pin with flat end was soldered vertically
Later, when this pin is pulled vertically,
Refers to the measured intensity. The metal of the second layer laminated on the first layer is also publicly available.
Known metals can be used, but the conductive pattern of the two-layer
When the second layer is the uppermost layer, platinum (Pt),
Nickel (Ni), palladium (Pd), copper (Cu),
At least one of silver (Ag) and gold (Au) is electrically conductive
Is preferably used. Of these,
Pt, Pd, Ag, and Au are more favorable because of their good corrosion resistance.
Appropriately used. Also, as will be described later,
Layers and use them as three or more conductive patterns
In some cases, diffusion of elements between the first and third layers is prevented.
To ensure a stable adhesion strength between the conductive pattern and the substrate.
In order to maintain Pt, Ni, Pd,
W, W-Ti, and Mo are more preferably used. These
The thickness of the two layers is not particularly limited.
For the same reason as for one layer, usually a film thickness of 0.05 to 10 μm
And more preferably in a film thickness of 0.1 to 5 μm.
Used for Further, when a third layer is laminated on the second layer,
As the third layer, a known metal can be used.
For example, at least Pt, Ni, Pd, Cu, Ag, and Au
One of them is preferably used because of its good electric conductivity.
Among these, Pt, Pd, Ag, and Au are particularly corrosion resistant.
Since it has excellent properties, it is more preferably used. These third
The thickness of the layer is not particularly limited,
Of stability and reliability of characteristics such as rate and economical aspects
Therefore, usually used in a film thickness of 0.05μm ~ 10μm
You. A semiconductor layer is formed on the uppermost metal layer.
To facilitate the soldering of body elements,
-Tin (Au-Sn) solder, lead-tin (Pb-Sn) solder
Solder, gold-silicon (Au-Si) solder, gold-ge
Rumanium (Au-Ge) solder
Alternatively, one kind of solder layer may be laminated and patterned. Sa
In the middle of the uppermost metal layer and the solder layer,
A diffusion prevention layer of solder material may be provided. This diffusion prevention layer
Pt, Ni, Pd,
W, W-Ti, and Mo are preferably used. Further, there are some of these conductive patterns.
To keep the specified electrical resistance between specific patterns,
A certain specified pattern between the specific patterns of the conductive pattern.
Form a resistor thin film pattern that is electrically connected by resistance
May be. This resistor thin film pattern shows the change in resistance over time.
And the temperature change of the metallized substrate
It is desirable that the resistance value does not change even if it does. The type of the resistor thin film used for this pattern
Although there is no particular limitation on the stability of the resistance value,
In general, Ta-N, Ni-Cr, etc. are preferably used due to their properties.
Used. The composition of these alloys is
It is desirable to select a small composition, for example, in Ta-N
Ta_TwoA composition containing the N phase is preferably used. Also these
The thickness of the resistor thin film pattern
Even if the film thickness is small, a large resistance value can be obtained.
Is thicker, a smaller resistance can be obtained.
Select according to the size of the pattern and the size of the resistance value
The balance between resistance stability and economics
Usually used in a film thickness of 0.01 μm to 0.5 μm
You. Next, the aluminum nitride metallurgy of the present invention
A method of manufacturing a closed substrate will be described. In the present invention, the aluminum nitride compact is
The constituting aluminum nitride powder is not particularly limited, and is known.
Can be used. In particular, the average particle size measured by the sedimentation method
A powder of 5 μm or less is preferable, and a powder of 3 μm or less is more preferable.
Preferably, a powder in the range of 0.5-2 μm is most preferably
used. The average particle diameter D calculated from the specific surface area₁When
Average particle size D measured by sedimentation method_TwoIs the following formula 0.2 μm ≦ D₁≦ 1.5 μm D_Two/ D₁≤2.60 Aluminum nitride powder that satisfies
The shrinkage can be reduced, and the dimensional stability of the sintered body
Not only improves but also approaches the linear shrinkage of the conductive paste layer
The adhesion strength between the aluminum nitride sintered body and the conductive layer
Can be further enhanced,
You. Further, the aluminum nitride powder contains oxygen
Content of 3.0% by weight or less and aluminum nitride composition
0.5% by weight of cationic impurities contained when AlN
% Or less, in particular, when the oxygen content is 0.4 to 1.0% by weight.
Box and the content of cationic impurities is 0.2 wt.
% Of Fe, Ca, S among the cationic impurities
Nitriding having a total content of i and C of 0.17% by weight or less
Aluminum powder is preferred. Aluminum nitride like this
When using aluminum powder, the resulting aluminum nitride
In the present invention, the improvement of the thermal conductivity of the
It is preferably used. The sintering aid used in the present invention is publicly available.
Known ones are used without particular limitation. Specifically, Al
Oxidation of potassium earth metal compounds such as calcium oxide
Compound consisting of a substance, yttrium or lanthanide
Substances, for example, oxides such as yttrium oxide are preferably used.
Used. Further, the organic bond used in the present invention
Known agents are also used without particular limitation. Specifically
Are polyacrylates, polymethacrylates
Acrylic resin such as methyl cellulose, hydroxymethyl
Chill cellulose, nitrocellulose, cellulose acetate
Cellulose resins such as butyrate, polyvinyl butyrate
Ral, polyvinyl alcohol, polyvinyl chloride, etc.
Nyl group-containing resin, hydrocarbon resin such as polyolefin,
One kind of oxygen-containing resin such as ethylene oxide or
Used as a mixture of two or more. Acrylic resin in this
Has good degreasing properties and can reduce via resistance.
Used appropriately. Other solvents, dispersants, plasticizers, etc.
Known components are also used without particular limitation. In the present invention, the aluminum nitride molded article
The proportion of each of the above components is a known blending ratio is particularly
Adopted without restrictions. For example, aluminum nitride 100
0.01 to 10 parts by weight of sintering aid, organic
0.1-30 parts by weight of binder are preferred. Especially sintering aid
In the case of 2 to 7 parts by weight, it is advantageous for high thermal conductivity, so
used. In addition, aluminum nitride from these components
The method for producing the molded body is not particularly limited, but generally,
Is green sheet by doctor blade method
Molded. This green sheet can be used alone
Alternatively, a plurality of sheets may be stacked. In the present invention, the conductive paste is formed.
High melting point metal powder is higher than the sintering temperature of aluminum nitride
There is no particular limitation as long as it has a high melting point. concrete
Metal such as tungsten or molybdenum is preferably used
Is done. Generally used as high melting point metal powder
Is an average particle diameter of 1 to 2.5 μm measured by the Fisher method.
And most preferably, having an average particle size of 1.6 to 2.0 μm.
The range is effective in preventing via cracking
Used. Further, the aluminum nitride used for the conductive paste
Known powders of minium are used without particular limitation.
You. Particularly suitable for the aluminum nitride molded body described above
Aluminum nitride powder used for
It has good sinterability with metal and improves the adhesion of the conductive layer.
Aluminum nitride and conductive layer
The difference in shrinkage between the sintered body and the sintered body is reduced, and the dimensional stability of the sintered body is improved.
Therefore, it is preferably used. In the present invention, the conductive paste has the above-mentioned high melting point.
2 to 10 parts by weight of nitrogen per 100 parts by weight of point metal powder
It has a composition containing aluminum chloride powder. Above conductive
In the composition of the paste, the ratio of aluminum nitride is 2
If less than 10 parts by weight, the conductive layer and aluminum nitride
Adhesion strength with the binder may be low or aluminum nitride-based
The difference in shrinkage between the plate and the conductive layer increases.
This causes a gap at the bonding interface. Also, aluminum nitride
Is more than 10 parts by weight, the viscosity of the conductive paste is high.
And the fillability deteriorates, resulting in voids
The adhesion strength between the conductive layer and the aluminum nitride sintered body is low.
Or discoloration due to aluminum nitride on the conductive layer surface
It becomes easy to produce and the resistance value rises. In addition, aluminum nitride
When the compounding amount of the aluminum powder is 3 to 7 parts by weight,
Because the difference in mix shrinkage is very small,
Low peripheral stress and low via electrical resistance
Therefore, it is suitable. The above-mentioned high melting point metal powder and nitrided
To make the composition with aluminum powder into a paste,
Generally, the composition and polyacrylate, polymethacrylate
Acrylic resin such as lylic acid ester, methyl cellulose
, Ethyl cellulose, hydroxymethyl cellulose,
Nitrocellulose, cellulose acetate butyrate, etc.
Cellulosic resin, polyvinyl butyral, polyvinyl
Vinyl group-containing resins such as alcohol, polyvinyl chloride, etc.
Hydrocarbon resin such as polyolefin, polyethylene oxa
Organic binders such as amides, di-n-butyl phthalate,
Tylene glycol mono-n-hexyl ether, acetic acid 2
-(2-butoxyethoxy) ethyl, terpineol, etc.
Mixed with an organic solvent of the appropriate viscosity, generally,
At 25 ° C./5 rpm, 100 to 30000 poise (po
is). Conductive paste
In the preparation of other ingredients such as other dispersants, plasticizers, etc.
Known ones are also used without any particular limitation. In the present invention, the above aluminum nitride
Fill the above conductive paste into the through-hole of the molded body made of etc.
Then, a molded body having vias is obtained. The above aluminum nitride
The method of forming a through hole in a molded body made of
Not commonly used mold punching methods and pans
A method with a chining machine is used. Large through hole
Although the size is not particularly limited, the diameter is 0.05 to 0.50 m.
m through hole allows easy filling of conductive paste into through hole
And the shrinkage ratio between the aluminum nitride portion and the conductive layer portion
Is easily adopted because it is easily balanced. Further, the above-mentioned conductive paste is applied to the above-mentioned aluminum nitride.
Fill through holes formed in compacts made of minium etc.
As the method, a known method is employed without any particular limitation. concrete
Printing, press-fitting, etc. are used for
When the ratio of length to diameter (length / diameter) is greater than 2.5
Is preferably used because the press-fit method is easier to fill.
You. In the present invention, the aluminum nitride having the above-mentioned via is provided.
The minium compact is the residual carbon in the aluminum nitride compact.
The elemental rate is 800 to 3000 ppm, preferably 1200 to 3000 ppm.
Must be defatted to 2500 ppm
It is. That is, when the residual carbon ratio is less than 800 ppm,
In this case, the thermal conductivity of the aluminum nitride sintered body is 190 W / m
Lower than K, thereby achieving the object of the present invention.
I can't. If the residual carbon ratio exceeds 3000 ppm,
If the melting point of the refractory metal powder deteriorates,
Uniform and sufficient adhesion strength between aluminum sintered body and conductive layer
I can't get the degree. Also, aluminum nitride part
Cracks occur on the aluminum nitride sintered body
The warpage of the plate increases, and it is possible to achieve the object of the present invention.
Can not. Aluminum nitride molded body having the above via
The residual carbon ratio in the aluminum nitride compact of
The method of degreasing to the range of 000 ppm is not particularly limited.
No. The degreasing atmosphere may oxidize high melting point metals.
Except for oxidizing atmospheres such as air
Absent. Specifically, inactive nitrogen, argon, helium, etc.
Gas atmosphere, reducing gas atmosphere such as hydrogen,
Gas atmosphere, humidified gas atmosphere, vacuum, etc.
Used appropriately. The above degreasing temperature is appropriately selected.
However, usually 500 to 1200 ° C., preferably 800 to 10
A temperature of 00 ° C is employed. In addition, temperature rise to such temperature
The speed is not particularly limited, but generally 10 ° C.
/ Min or less is preferred. Further, the degreasing time is determined by the residual amount of the molded body after degreasing.
When the carbon fraction is in the range of 800 to 3000 ppm
Just set the interval. This time depends on the thickness of the compact,
Some differences due to body density, ratio of vias, degreasing temperature, etc.
Therefore, it cannot be specified unconditionally.
It is determined in the range of ~ 600 minutes. In the present invention, the degreased aluminum nitride
The residual carbon ratio in the aluminum compact is 800 to 3000 ppm.
A molded product having vias within the range (hereinafter referred to as “degreased product”)
) Is followed by a non-oxidizing atmosphere or a dry reducing gas
Bake in an atmosphere. For example, the above non-oxidizing atmosphere
For example, gas such as nitrogen, argon, helium, etc.
Use an atmosphere consisting of a mixed gas or a vacuum (or reduced pressure) atmosphere.
Used. In addition, as a dry reducing gas atmosphere,
Hydrogen or a mixed atmosphere of hydrogen and an inert gas is used. Ma
In addition, the temperature conditions for the firing were 1200 to 1700 for the first stage.
C., preferably at 1500 to 1650 C.
The second stage is 1800 to 1950 ° C., preferably 182
It is necessary to fire at 0 to 1900 ° C. That is, 1
If the firing temperature of the stage is less than 1200 ° C,
Reduction of oxygen in aluminum nitride by residual carbon
The removal reaction becomes difficult to proceed, and the aluminum nitride sintered body
The thermal conductivity becomes lower than 190 W / mK,
Inability to achieve purpose. On the other hand, the first stage firing temperature
If the temperature exceeds 1700 ° C, aluminum nitride due to residual carbon
Before the reduction and removal reaction of oxygen in minium proceeds sufficiently,
Sintering of aluminum chloride proceeds, resulting in oxygen
Is diffused into aluminum nitride to form a solid solution.
High thermal conductivity of the sintered body is hindered, and the object of the present invention is achieved.
I can't. The firing temperature of the first stage is 1500
In the case of １６1650 ° C., the oxygen reduction and removal reaction proceeds effectively.
Is preferred. Also, the firing temperature of the second stage is 1800 ° C.
If the amount is less than
And the thermal conductivity of the aluminum nitride sintered body was 19
It becomes a value lower than 0 W / mK, and achieves the object of the present invention.
I can't. The firing temperature of the second stage is 1950 ° C.
Exceeds the adhesion strength between the conductive layer that forms the via and the substrate.
Not only does the degree decrease, but the warpage of the sintered body is 200 μm.
It is possible to achieve the object of the present invention.
Can not. The rate of temperature rise to such a temperature is particularly limited
Although it is not a thing, 1 to 40 ° C./min is common. Ma
In addition, the holding time of the temperature is not particularly limited, but may be one step.
Eyes range from 30 minutes to 10 hours, second stage ranges from 1 minute to 20 hours
It is preferable to set Furthermore, the first and second stages
The firing temperature of can be performed in one firing without lowering the temperature
Good, lower the temperature between the first and second stages,
You may go. However, time and energy efficiency
In consideration of this, it is preferable to perform one firing without lowering the temperature on the way.
New The nitride having vias obtained by the above method
Conductive patterns are formed on opposite sides of the Luminium substrate
And electrically connect at least a part of the conductive pattern with the via.
Connection to obtain the metallized substrate of the present invention.
Can be The above conductive pattern is formed on the surface of the substrate.
In order to increase the adhesion strength between the conductive pattern and the substrate
Preferably, the substrate surface is ground or polished.
No. Known techniques can be used for grinding and polishing without restriction.
Usually, wrapping, polishing, barrel polishing,
Methods such as sand blasting and grinding with a grinder are used.
You. Although the surface roughness of the substrate varies depending on the purpose,
Core wire average roughness (Ra) 0.8 μm or less, more preferably
Is set to Ra 0.05 μm or less.
It is preferable because the reliability of soldering is enhanced. As a method of forming a conductive pattern, a known method is used.
Technology can be used without restrictions. Conductive pattern
The formation of the constituent metal thin films is performed by sputtering or evaporation
Method, chemical vapor deposition (CVD method), ion plating
Coating, thermal spraying, screen printing, spin coating and
Sol-gel coating method using the tip method
It can be formed using a known technique. For example, spa
Forming a metal thin film that forms a conductive pattern by the sputtering method
Use a target containing the components of the metal thin film.
Normally, set the substrate temperature between room temperature and 300 ° C, and
Is 2 × 10^-3After evacuating to below Pa, argon gas
From 10 to 80 cc / min. In the vacuum chamber
Is maintained at 0.2 to 1.0 Pa, and RF (high frequency)
The power of the source is set to 0.2 to 3 kW, and
It is formed to a thickness. Among the above-mentioned sputtering methods, a resistor thin film
Like Ta-N, which is one of the examples that constitute the film pattern
Forming thin films of nitride and oxide
In this case, the reactive sputtering method is more preferably used.
You can. Reactive sputtering is a method of compound metal
Using a target consisting of components, the other components of the compound
A reaction gas containing a certain amount of nitrogen or oxygen
How to obtain a thin film by introducing into an empty tank and performing sputtering
Is the law. The composition of the resulting thin film consists of a discharge gas and a reaction gas.
Is determined by the introduction ratio. By reactive sputtering, Ta-N
An example of a method of forming a film is to use Ta as a target.
Normally, set the substrate temperature between room temperature and 300 ° C, and
Is 2 × 10^-3Pa or less, and after evacuation, discharge gas
Lugon is introduced at 10-80 cc / min. , Reaction gas
Nitrogen introduction amount of the argon gas introduction amount of 0.3 to
At a rate of 0.7, the pressure in the vacuum chamber is increased to 0.2 to 1.
0Pa and the power of RF (high frequency) power supply is 0.2 ~
At 3 kW, Ta-N is formed to a predetermined thickness. Shape of conductive pattern used in the present invention
Can be arbitrarily selected according to the application, and the conductive pattern
Formed by patterning the metal thin film that constitutes
Is done. The patterning method depends on the substrate application.
A publicly known technique can be adopted. Specifically, a metal mask
Method, wet etching method, lift-off method, dry etching
A method such as a bridging method is employed. For example, metal mask method
When turning, a conductive layer was formed in the through hole
Place a predetermined pattern on the aluminum nitride substrate in advance.
After fixing the metal mask on which the solder is formed,
Form a conductive pattern by using a tarring method or vapor deposition method
Things. In addition, conductive patterns are obtained by dry etching.
Is formed by the above-described sputtering method, vapor deposition method, or the like.
The metal thin film forming the conductive pattern
Using a photoresist or the like on the aluminum substrate,
A pattern is formed on the metal thin film and ion milling etc.
After removing unnecessary portions of the metal thin film, the resist is removed.
Thus, patterning is performed. The resistor pattern is included in the circuit pattern.
The method of forming the conductive pattern in the case of
It is not something that can be done, but if you give an example of how to make it,
There is a way. One way is to start with aluminum nitride
Including the connection with the resistor thin film pattern on the
Forming a conductive pattern. Next, on the conductive pattern
Stack the resistor thin films that make up the resistor thin film pattern
Then, a resistor thin film pattern is formed. According to this method,
At the connection point, the resistor thin film is
A circuit pattern having a laminated shape can be obtained. Another is the resistance of the shape including the connection part.
Body thin film pattern on aluminum nitride substrate in advance
Formed on the resistor thin film pattern.
The metal pattern forming the conductive pattern is laminated and the conductive pattern
It is a method of forming. According to this method, the connection part
And the conductive pattern is stacked on top of the resistor thin film
Circuit pattern can be obtained. Furthermore, the resistance
Body thin film directly in contact with aluminum nitride substrate
Used for the first layer, on which the electrical resistivity is higher than that of the resistor thin film
A conductive pattern is formed by laminating low metal thin films.
Specific pattern of the conductive pattern that requires a specified resistance value
The metal thin film on the resistor thin film is
By partial removal, the resistor thin film pattern
This is a method of forming a conductive pattern including turns. The resistor thin film pattern thus obtained
In order to suppress the aging of the resistance value and the temperature change,
Usually, an oxide film is formed on the surface of the resistor thin film,
A process for stabilizing the value (resistance stabilization process) is performed.
As for the method of the resistance stabilization processing, there is no limitation on the known technology.
Although it can be used, specifically, an oxide film by the anodic oxidation method
Substrate on which a resistor thin film pattern is formed
The resistance value by forming an oxide film by heating at
Stabilization is performed. Further obtained resistor thin
Known techniques are also used for adjusting the resistance value of the film pattern.
Can be used without restrictions. Specifically, laser trimming
Method or a substrate on which a resistor thin film pattern is formed in the atmosphere.
The method of adjusting by heating can be given as an example.
Wear. [0048] As will be understood from the above description, the present invention
Ming's substrate has a thermal conductivity of 190 W / mK or more at 25 ° C.
Conductive layer forming via with aluminum nitride sintered body
5.0kg / mm^TwoAbove and strong enough
Cracks in the aluminum nitride sintered body and
The substrate has no cracks and small warpage.
Conductive patterns are formed on opposing surfaces and exist on both surfaces
At least part of the conductive pattern
Metallized substrate connected to the conductive pattern
Meta with strong adhesion strength between metal thin film and via
Rise substrate. Therefore, the metallized substrate of the present invention
Has a very high industrial value,
Submounts and chip carriers for LEDs and light emitting diodes
Electronic and semi-conductors, heat sinks, IC packages, etc.
It can be suitably used for conductor equipment parts. [0049] The present invention will now be specifically illustrated by the following examples.
However, the present invention is not limited to these examples.
Absent. In Examples and Comparative Examples, the residual carbon ratio
Is a non-dispersive infrared absorption carbon analyzer (EMIA-11)
0, manufactured by Horiba, Ltd.). Average particle size D obtained from specific surface area₁Is
It was calculated by the equation. D₁(Μm) = 6 / (S × 3.26) [S: AlN powder specific surface area (m^Two/ g)] Also, the average particle diameter D by the sedimentation method_TwoIs HORIBA, Ltd.
Using a CAPA5000 centrifugal particle size analyzer.
Was. The appearance inspection of the aluminum nitride sintered body
By visual and stereoscopic observation (× 40)
went. The warpage of aluminum nitride sintered body is
It measured with the micrometer with the surface plate made by Toyo. Further, the aluminum nitride sintered body and the conductive layer
Was measured as follows. First, in the through hole
Aluminum nitride sintered via filled with conductive layer
Cut the substrate at the center of the part, mirror-process this cut surface,
After forming a thin film of Ti / Pt / Au on the cut surface,
Hang the Ni-plated pin so that it contacts the via surface.
Soldered directly. The pin has a flat tip and a pin diameter of φ
0.5mm, 42-alloy, solder 60 tin
% By weight and 40% by weight of lead. this,
Set on a Toyo Seiki Seisakusho strograph M2,
The breaking strength when the pin was pulled in the vertical direction was measured.
The pulling speed was 10 mm / min. Also, the release mode
The fractured surface of the pin and sintered body after the test is
Mirror (× 40), metal microscope (× 400) and X-ray microscope
It was examined by observing with a black analyzer. A conductive layer is formed in the through hole of the aluminum nitride sintered body.
The formation of the conductive pattern on the substrate filled with
I went. In other words, the substrate surface uses diamond abrasive grains.
The substrate thickness is 0.22 mm and the substrate surface is mirror-like.
Until processed. Center line average roughness of the obtained substrate surface
(Ra) measured by Surfcom 550A manufactured by Tokyo Seimitsu Co., Ltd.
As a result, the value of Ra was 0.02 μm. The processed substrate is superposed in methylene chloride.
After sonic cleaning, dry in methylene chloride vapor.
By sputtering method on both sides (first layer / first layer)
Two layers / third layer = Ti: 0.1 μm / Pt: 0.2 μm /
Au: 0.5 μm) was formed. Spatter
In the ring, heat the substrate to 150 ° C and
Is 2 × 10−^ThreeAfter evacuation to Pa or less, Ar gas
The pressure in the vacuum chamber is maintained at 0.6 Pa by introducing
RF 0.5 kW using i, Pt, and Au targets
The film was formed under the following conditions. After forming the metal thin film 3, the metal on the front side
The thin film 3 is etched by a dry etching method,
Formed a turn. Next, the reaction is performed on the entire front side including the metal thin film 3.
The resistor thin film layer by reactive sputtering
A Ta-N layer was laminated with a thickness of 0.1 μm. Reactive spa
In the sputtering method, the substrate is heated to 150 ° C.
2 × 10- in the empty tank^ThreeAfter evacuation to Pa or less, Ar
Gas and N_TwoIntroduce gas to increase the pressure in the vacuum chamber to 0.6 Pa
And using a Ta target, RF 0.5 kW
The film was formed under the conditions. Note that Ar gas and N_TwoGas introduction ratio is
1: 0.6. The Ta-N layer is provided by Nippon Philips
When analyzed by a fully automatic X-ray diffractometer manufactured by
Ta_TwoAn N-phase diffraction peak was observed. The Ta-N layer
After lamination, unnecessary portions of Ta-
By removing the N layer, a resistor thin film layer 4 is formed.
Was. After forming the resistor thin film layer, the substrate is
Resistance stabilization by heating in the air at 0 ° C for 4 hours
Processing was performed. After further stabilization, the metallized group
Dicing machine to make the board 1.0mm long and 1.0mm wide
To create a metallized substrate as shown in Fig. 1.
did. Between the conductive pattern of the metallized substrate and the via
Was measured according to the following procedure. That is, the metal sheet
Using a substrate on which a film has been formed before pattern formation,
Pin diameter φ0.5 with Ni plating on metal thin film on
mm pin, all metal thin films on the via
Solder vertically to cover. The solder used
Is the same as the solder used for adhesion strength measurement described above
It is. Next, follow the same procedure as for the adhesion strength measurement,
The tensile strength at the time of pulling was determined, and the formed metal thin film and via
The adhesive strength between them was Metallurgy cut by dicing machine
Resistance of the via of the substrate and the electric resistance of the resistor thin film layer 4
The resistance was measured according to the following procedure. That is, the electrical resistance of the via
For the value, the back side of the metallized substrate is
Solder similar to the one used for adhesion strength measurement described above
Solder with the conductive pattern on the via on the front side
A needle-shaped measurement probe in contact with
The electric resistance between the metal substrate and the metal substrate was measured. resistance
With respect to the electric resistance value of the body thin film layer 4,
Two on each of the two conductive patterns connected to both sides
Contact with the measurement probe of
Was measured. Embodiment 1 The average particle size by the sedimentation method is 1.50 μm, and the specific surface area is
2.50m^Two/ g, thus calculated from the specific surface area
With an average particle size of 0.74 μm and an oxygen content of 0.80%
100 parts by weight of aluminum nitride powder having the composition shown in Table 1
5 parts by weight of trittria, n-butyl methacrylate as a dispersant
2 parts by weight, polybutyl acrylate as organic binder
11 parts by weight of dioctyl phthalate as a plasticizer
Parts, mixed solvent of toluene and isopropyl alcohol 50
Weigh parts by weight, put them into a ball mill pot,
Mix well using a nylon ball. Obtained slur
Lee was passed through a defoaming device to adjust the viscosity to 20,000 cps.
Then, using a doctor blade type sheet forming machine,
Formed on a polypropylene film into a sheet, with a thickness of about
Produce 0.50mm aluminum nitride green sheet
did. Cut the green sheet into 65 x 65 mm
Was. Subsequently, this aluminum nitride green sheet was
Were laminated. Lamination pressure is 50kgf / cm^Two, Lamination temperature
At 80 ° C., the lamination time was 15 minutes. Next, this laminated group
Lean sheet 65 × 65mm, φ0.65mm pan
Punched at 1.5mm pitch using a die for
A 40 × 40 array was prepared. Then Fisher
Powder 1 with an average particle size of 1.8 μm as determined by the method
5 parts by weight of the aluminum nitride powder with respect to 00 parts by weight
Parts, 1.5 parts by weight of ethyl cellulose as an organic binder,
2- (2-butoxyethoxy) ethyl acetate as a solvent
5.0 parts by weight, other plasticizers and dispersants in an automatic mortar, followed by
And knead well with a three-roll mill to make a paste and press-fit
Aluminum grease having the through-holes formed by a method
Filling of the tungsten paste into the through holes of the
went. Filling pressure is 80 psi, filling time is 100 seconds
there were. The aluminum nitride having the via thus manufactured
Dry nitrogen gas is passed through the minium compact at 30 l / min.
While heating at 900 ° C. for 2 hours, degreasing was performed. The heating rate is
2.5 ° C./min. Test sun heated and degreased at the same time
When the residual carbon ratio of the pull was checked, it was 1800 ppm.
Was. After degreasing, the degreased body is made of aluminum nitride container.
And heated at 1580 ° C. for 6 hours in a nitrogen atmosphere (1 step
Second firing), and further heated at 1870 ° C. for 10 hours (two steps).
Eye baking). Inside the aluminum nitride sintered body of the obtained substrate
Cracks have not occurred in the
No crack was generated, and the appearance of the sintered body was good. Ma
Also, warpage of the entire substrate of the obtained aluminum nitride sintered body
Was 45 μm. Density of conductive layer filled in through hole
When the wearing strength was measured, it was 17.4 kg / mm^TwoSo
Was. In each of the peeling modes, the inside of the solder was broken. The obtained substrate is further provided with a conductive pattern
Form a resistor thin film layer and cut it with a dicing machine
After that, measure the electrical resistance value of the via part of the metallized substrate
As a result, it was 1.6 mΩ. In addition, the voltage of the resistor thin film layer
The air resistance was 20.1Ω. Between the metal thin film 3 and the via
Adhesion strength is 7.5kg / mm^TwoMet. At the same time
Test sample with fat and fired substrate thickness 0.635mm
Was measured by the laser flash method.
Was 215 W / mk. Examples 2 to 6, Comparative Examples 1 and 2 In Example 1, the nitrogen content in the conductive paste shown in Table 2 was measured.
Example except that the addition amount of aluminum halide powder was changed
Same as 1. Table 2 shows the results. Comparative Example 2
In, the electrical resistance value of the resistor thin film layer was measured,
Crack in sintered body causes resistor thin film layer to be inside pattern
And there was no electrical continuity. Embodiment 7 Aluminum nitride molding with via made in Example 1
The body was circulated for 900 l while flowing dry nitrogen gas at 18 l / min.
C. for 2 hours. Heating rate is 2.5 ° C / min
Met. Residual charcoal of test sample heated and degreased at the same time
When the element ratio was examined, it was 2800 ppm. Degreasing
Thereafter, the degreased body was placed in a container made of aluminum nitride,
Heated at 1580 ° C. for 6 hours in an elementary atmosphere (first stage firing)
Furthermore, it heated at 1870 degreeC for 10 hours (2nd stage baking).
A crack is formed inside the aluminum nitride sintered body of the obtained substrate.
Cracks have not occurred, and cracks have also occurred inside the conductive layer.
And the appearance of the sintered body was good. Also obtained
The warpage of the entire aluminum nitride sintered body substrate is 65μ.
m. Measure the adhesion strength of the conductive layer filled in the through hole
16.6kg / mm^TwoMet. Peeling off
In each case, the solder was broken in the solder. The obtained substrate is further provided with a conductive pattern
Form a resistor thin film layer and cut it with a dicing machine
After that, measure the electrical resistance value of the via part of the metallized substrate
As a result, it was 3.1 mΩ. In addition, the voltage of the resistor thin film layer
The air resistance was 20.8Ω. Between metal thin film 3 and via
Has an adhesion strength of 7.6 kg / mm^TwoMet. At the same time
Test sample with fat and fired substrate thickness 0.635mm
Was measured by the laser flash method.
Was 215 W / mk. Embodiment 8 Aluminum nitride molding with via made in Example 1
The body was circulated for 900 l while flowing dry nitrogen gas at 23 l / min.
C. for 2 hours. Heating rate is 2.5 ° C / min
Met. Residual charcoal of test sample heated and degreased at the same time
When the element ratio was examined, it was 2500 ppm. Degreasing
Thereafter, the degreased body was placed in a container made of aluminum nitride,
Heated at 1580 ° C. for 6 hours in an elementary atmosphere (first stage firing)
Furthermore, it heated at 1870 degreeC for 10 hours (2nd stage baking).
A crack is formed inside the aluminum nitride sintered body of the obtained substrate.
Cracks have not occurred, and cracks have also occurred inside the conductive layer.
And the appearance of the sintered body was good. Also obtained
The warp of the entire aluminum nitride sintered body was 54 μm.
m. Measure the adhesion strength of the conductive layer filled in the through hole
16.8kg / mm^TwoMet. Peeling off
In each case, the solder was broken in the solder. The obtained substrate is further provided with a conductive pattern
Form a resistor thin film layer and cut it with a dicing machine
After that, measure the electrical resistance value of the via part of the metallized substrate
As a result, it was 2.6 mΩ. In addition, the voltage of the resistor thin film layer
The air resistance was 19.8Ω. Between metal thin film 3 and via
Has an adhesion strength of 7.1 kg / mm^TwoMet. At the same time
Test sample with fat and fired substrate thickness 0.635mm
Was measured by the laser flash method.
Was 215 W / mk. Embodiment 9 Aluminum nitride molding with via made in Example 1
The body was circulated for 900 l while flowing dry nitrogen gas at 35 l / min.
C. for 2 hours. Heating rate is 2.5 ° C / min
Met. Residual charcoal of test sample heated and degreased at the same time
When the element ratio was checked, it was 1200 ppm. Degreasing
Thereafter, the degreased body was placed in a container made of aluminum nitride,
Heated at 1580 ° C. for 6 hours in an elementary atmosphere (first stage firing)
Furthermore, it heated at 1870 degreeC for 10 hours (2nd stage baking).
A crack is formed inside the aluminum nitride sintered body of the obtained substrate.
Cracks have not occurred, and cracks have also occurred inside the conductive layer.
And the appearance of the sintered body was good. Also obtained
The warpage of the entire aluminum nitride sintered body substrate was 26μ.
m. Measure the adhesion strength of the conductive layer filled in the through hole
15.6kg / mm^TwoMet. Peeling off
In each case, the solder was broken in the solder. The obtained substrate is further provided with a conductive pattern
Form a resistor thin film layer and cut it with a dicing machine
After that, measure the electrical resistance value of the via part of the metallized substrate
As a result, it was 1.5 mΩ. In addition, the voltage of the resistor thin film layer
The air resistance was 19.6Ω. Between metal thin film 3 and via
Has an adhesion strength of 8.9 kg / mm^TwoMet. At the same time
Test sample with fat and fired substrate thickness 0.635mm
Was measured by the laser flash method.
Was 208 W / mk. Embodiment 10 Aluminum nitride molding with via made in Example 1
The mixture was passed through a dry nitrogen / hydrogen mixed gas at 30 l / min.
While heating at 900 ° C. for 2 hours, degreasing was performed. The heating rate is
2.5 ° C./min. Test sun heated and degreased at the same time
When the residual carbon ratio of the pull was examined, it was 900 ppm.
Was. After degreasing, place the degreased body in a container made of aluminum nitride.
And heat in a nitrogen atmosphere at 1580 ° C for 6 hours (first stage
(Baking) and further heated at 1870 ° C. for 10 hours (second stage)
Firing). The aluminum nitride sintered body of the obtained substrate
Has no cracks and cracks inside the conductive layer
No occurrence was observed, and the appearance of the sintered body was good. Ma
Also, warpage of the entire substrate of the obtained aluminum nitride sintered body
Was 18 μm. Density of conductive layer filled in through hole
When the wearing strength was measured, it was 14.0 kg / mm^TwoSo
Was. In each of the peeling modes, the inside of the solder was broken. The obtained substrate is further provided with a conductive pattern
Form a resistor thin film layer and cut it with a dicing machine
After that, measure the electrical resistance value of the via part of the metallized substrate
As a result, it was 1.2 mΩ. In addition, the voltage of the resistor thin film layer
The air resistance was 20.2Ω. Between metal thin film 3 and via
Has an adhesion strength of 7.2 kg / mm^TwoMet. At the same time
Test sample with fat and fired substrate thickness 0.635mm
Was measured by the laser flash method.
Was 198 W / mk. Comparative Example 3 Aluminum nitride molding with via made in Example 1
The mixture was passed through a mixed gas of dry nitrogen / hydrogen at 20 l / min.
While heating at 900 ° C. for 2 hours, degreasing was performed. The heating rate is
2.5 ° C./min. Test sun heated and degreased at the same time
When the residual carbon ratio of the pull was examined, it was 600 ppm.
Was. After degreasing, place the degreased body in a container made of aluminum nitride.
And heat in a nitrogen atmosphere at 1580 ° C for 6 hours (first stage
(Baking) and further heated at 1870 ° C. for 10 hours (second stage)
Firing). The aluminum nitride sintered body of the obtained substrate
No cracks occurred and no cracks inside the conductive layer
No occurrence was observed, and the appearance of the sintered body was good. Also,
The resultant aluminum nitride sintered body substrate has a warp of 1
It was 5 μm. Adhesion strength of conductive layer filled in through hole
When measured, 8.0 kg / mm^TwoMet. Peeling
The modes are both tungsten layer and aluminum nitride
It was peeling at the interface of the sintered body. The obtained substrate is further provided with a conductive pattern
Form a resistor thin film layer and cut it with a dicing machine
After that, measure the electrical resistance value of the via part of the metallized substrate
As a result, it was 1.2 mΩ. In addition, the voltage of the resistor thin film layer
The air resistance was 20.8Ω. Between metal thin film 3 and via
Has an adhesion strength of 6.0 kg / mm^TwoMet. At the same time
Test sample with fat and fired substrate thickness 0.635mm
Was measured by the laser flash method.
168 W / mk. Comparative Example 4 Aluminum nitride molding with via made in Example 1
The body was circulated for 900 l while flowing dry nitrogen gas at 5 l / min.
C. for 2 hours. Heating rate is 2.5 ° C / min
Met. Residual charcoal of test sample heated and degreased at the same time
When the element ratio was examined, it was 3500 ppm. Degreasing
Thereafter, the degreased body was placed in a container made of aluminum nitride,
Heated at 1580 ° C. for 6 hours in an elementary atmosphere (first stage firing)
Furthermore, it heated at 1870 degreeC for 10 hours (2nd stage baking).
Cracks inside the aluminum nitride sintered body of the obtained substrate
There has occurred. In addition, the obtained aluminum nitride sintered body
The warp of the entire substrate was 242 μm. Fill through hole
The measured adhesion strength of the conductive layer was 3.3 kg.
/ Mm^TwoMet. The peeling mode is
At the interface between the aluminum layer and the aluminum nitride sintered body. The obtained substrate is further provided with a conductive pattern
Form a resistor thin film layer and cut it with a dicing machine
After that, measure the electrical resistance value of the via part of the metallized substrate
As a result, it was 9.0 mΩ. In addition, the resistor thin film layer
The electrical resistance was measured.
The antibody thin film layer is separated inside the pattern,
There was no continuity. The adhesion strength between the metal thin film 3 and the via is
2.8kg / mm^TwoMet. Simultaneously degreased and fired base
The thermal conductivity of a test sample with a thickness of 0.635 mm was measured.
195 W / m measured by laser flash method
k. Examples 11 to 15 and Comparative Examples 5 and 6 In Example 1, the firing temperature of the first stage shown in Table 2 was changed.
Except having performed, it carried out similarly to Example 1. Table 2 shows the results.
Show. Examples 16 to 18 and Comparative Examples 7 and 8 In Example 1, the firing temperature in the second stage shown in Table 2 was changed.
Except having performed, it carried out similarly to Example 1. Table 2 shows the results.
Show. Embodiment 19 Aluminum nitride molding with via made in Example 1
The body was circulated for 90 l while flowing dry nitrogen gas at 30 l / min.
Heat degreasing was performed at 0 ° C. for 2 hours. The heating rate is 2.5 ° C /
Minutes. Residual carbon ratio of sample heated and degreased at the same time
Was 1800 ppm. After degreasing, before
Place the degreased body in a container made of aluminum nitride and place in a nitrogen atmosphere.
Heat in air at 1350 ° C for 6 hours (first stage baking), cool down
Was. At the same time, the residual carbon ratio of the sample
And 320 ppm. After the first firing, reappear in a nitrogen atmosphere.
Heated at 1870 ° C. for 10 hours in the atmosphere (second stage firing).
A clad is placed inside the aluminum nitride sintered body of the obtained substrate.
No cracks occurred, and no cracks occurred inside the conductive layer.
No sintering occurred, and the appearance of the sintered body was good. Also,
The warpage of the entire aluminum nitride sintered body substrate is 4
It was 6 μm. Adhesion strength of conductive layer filled in through hole
Measured 16.7 kg / mm^TwoMet. Stripping
In each of the release modes, breakage in the solder was observed. The obtained substrate is further provided with a conductive pattern
Form a resistor thin film layer and cut it with a dicing machine
After that, measure the electrical resistance value of the via part of the metallized substrate
As a result, it was 2.9 mΩ. In addition, the voltage of the resistor thin film layer
The air resistance was 20.6Ω. Between the conductive layer 3 and the via
Adhesion strength is 7.6kg / mm^TwoMet. At the same time
Test sample with fat and fired substrate thickness 0.635mm
Was measured by the laser flash method.
Was 205 W / mK. Comparative Example 9 Aluminum nitride molding with via made in Example 1
While flowing dry nitrogen gas at a flow rate of 3 l / min.
C. for 2 hours. Heating rate is 2.5 ° C / min
Met. At the same time, the residual carbon content of the sample
Upon examination, it was 4500 ppm. After degreasing,
Put the degreased body in a container made of aluminum nitride and place it in a nitrogen atmosphere.
Heat at 1350 ° C for 6 hours (first stage baking), cool down
Was. At the same time, the residual carbon ratio of the sample
And 850 ppm. After the first firing, reappear in a nitrogen atmosphere.
Heated at 1870 ° C. for 10 hours in the atmosphere (second stage firing).
Cracks inside the aluminum nitride sintered body of the obtained substrate
There has occurred. In addition, the obtained aluminum nitride sintered body
The warp of the entire substrate was 327 μm. Fill through hole
The measured adhesion strength of the conductive layer was 3.2 kg.
/ Mm^TwoMet. The peeling mode is
At the interface between the aluminum layer and the aluminum nitride sintered body. The obtained substrate is further provided with a conductive pattern
Form a resistor thin film layer and cut it with a dicing machine
After that, measure the electrical resistance value of the via part of the metallized substrate
As a result, it was 10.2 mΩ. Also, the resistor thin film layer
The electrical resistance of the sintered body was measured.
The resistor thin film layer is separated inside the pattern,
There was no continuity. The adhesion strength between the metal thin film 3 and the via is
7.6kg / mm^TwoMet. Simultaneously degreased and fired base
The thermal conductivity of a test sample with a thickness of 0.635 mm was measured.
196 W / m measured by laser flash method
It was K. [0083] [Table 1][0084] [Table 2] [0085] [Table 3][0086] [Table 4]

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic view showing one embodiment of a metallized substrate according to the present invention. [Explanation of reference numerals] 1. Aluminum nitride substrate Via 3. Metal thin film4. Resistor thin film layer

──────────────────────────────────────────────────の Continuation of the front page (51) Int.Cl. ⁷ Identification symbol FI H05K 3/38 H01L 23/12 J (56) References JP-A-3-276693 (JP, A) JP-A-8-316602 ( JP, A) JP-A-5-335710 (JP, A) JP-A-1-157592 (JP, A) JP-A-7-176864 (JP, A) JP-A 8-293654 (JP, A) (58) ) Surveyed field (Int.Cl. ⁷ , DB name) H05K 1/03 610 H05K 1/09 H05K 1/11 H05K 3/38

Claims (1)

(57) [Claims 1] A high melting point is formed in a through hole of an aluminum nitride sintered body.
100 parts by weight of metal and 2 to 10 parts by weight of aluminum nitride
In a substrate filled with a conductive layer made of aluminum nitride, the thermal conductivity of the aluminum nitride sintered body is 190 W / mK or more, and the adhesion strength between the aluminum nitride sintered body and the conductive layer is 5.0 kg / mm ² or more. , and the metal thin film pattern is formed on the opposite surfaces of the substrate, the gold present in the double-sided
A metallized substrate in which at least a part of the metal thin film pattern is electrically connected to each other by a conductive layer.