JPH0737420A - Conductive paste composition and circuit board using conductive paste composition - Google Patents

Conductive paste composition and circuit board using conductive paste composition

Info

Publication number
JPH0737420A
JPH0737420A JP18361793A JP18361793A JPH0737420A JP H0737420 A JPH0737420 A JP H0737420A JP 18361793 A JP18361793 A JP 18361793A JP 18361793 A JP18361793 A JP 18361793A JP H0737420 A JPH0737420 A JP H0737420A
Authority
JP
Japan
Prior art keywords
weight
paste composition
conductive material
conductor paste
inorganic binder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18361793A
Other languages
Japanese (ja)
Inventor
Katsuhiko Igarashi
五十嵐克彦
Takeshi Nomura
野村武史
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Corp
Original Assignee
TDK Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TDK Corp filed Critical TDK Corp
Priority to JP18361793A priority Critical patent/JPH0737420A/en
Publication of JPH0737420A publication Critical patent/JPH0737420A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/09Use of materials for the conductive, e.g. metallic pattern
    • H05K1/092Dispersed materials, e.g. conductive pastes or inks

Abstract

PURPOSE:To provide a conductive paste and a circuit board using such a conductive paste to form a terminal electrode or an external conductor which has a high adhesive strength after a heat cycle, and an excellent solder wettability. CONSTITUTION:This conductive paste is formed by dispersing and mixing Ag or a conductive material mainly of Ag; and an inorganic binder which consists of a glass frit and a metal oxide; in a vehicle. The inorganic binder composition is composed of 20 to 40wt.% of at least one sort selected from PbO and/or ZnO, 6 to 20wt.% if B2O3, 2 to 15wt.% of SiO2, and 30 to 72wt.% of CuO and/or TiO2. The PbO, ZnO, B2O3, and SiO2 of those components are all the glass frit component, and 0.35 to 10 pts.wt. is contained to 100 pts.wt. of the conductive material. The CuO and TiO2 are metal oxides other than the glass frit component, and 5 pts.wt. or less is contained to 100 pts.wt. of the conductive material.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、回路基板全般に用いら
れるが、特にマイクロ波用誘電体共振子及びフィルタの
誘電体基板の端子電極または外部導体形成等に用いられ
る導体ぺ−スト組成物に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention is used in circuit boards in general, and particularly in a conductor paste composition used for forming a terminal electrode or an outer conductor of a dielectric substrate for microwaves and a dielectric substrate of a filter. Regarding

【0002】[0002]

【従来の技術】導体ぺ−ストは、導電材、ガラスフリッ
ト及び金属酸化物等の無機結合剤をビヒクル中に分散す
ることによって得られる。この中で導電材は、銀、パラ
ジウム、金、白金、銅、ニッケルまたはこれらの混合物
からなる。これらのうち銀合金はは比較的安価で空気中
で焼成できることから広く用いられており、また近年、
マイクロ波帯域で使用する部品が増大していることか
ら、比抵抗の最も小さい銀の使用頻度が高まっている。
BACKGROUND OF THE INVENTION Conductor pastes are obtained by dispersing a conductive material, glass frit and an inorganic binder such as a metal oxide in a vehicle. Among them, the conductive material is made of silver, palladium, gold, platinum, copper, nickel or a mixture thereof. Of these, silver alloys are widely used because they are relatively inexpensive and can be fired in air.
As the number of parts used in the microwave band is increasing, the frequency of use of silver, which has the smallest specific resistance, is increasing.

【0003】またガラスフリット及び金属酸化物等の無
機結合剤は、銀の焼結助剤及び誘電体基板との接着の役
割を果たし、永久バインダとしてはたらく。
Further, an inorganic binder such as glass frit and a metal oxide plays a role of adhering a silver sintering aid and a dielectric substrate, and acts as a permanent binder.

【0004】これら導体ぺ−ストは、セラミック素子等
への焼き付け等の処置によって端子電極あるいは外部導
体となるが、用途によってその名称は使い分けられる。
得られた端子電極等は他部品との電気的接続を確保する
ために、半田付け処理が施される。これら半田付け後の
接着強度は、初期においてもヒ−トサイクル試験後にお
いても十分高いことが必要であるが、ヒ−トサイクル試
験によって接着強度の劣化が生じる。これはヒ−トサイ
クル試験が急激な温度変化を繰り返し行う試験であるこ
とから、半田、端子電極、及び誘電体間で線膨張率の差
によって各界面に応力が発生することに起因している。
特に半田からの応力が大きく、この応力が端子電極と誘
電体間の接着部を破壊するために接着強度が劣化する。
一般に、幾度か半田付けを必要とする工程の場合、共晶
半田と高温半田が併用される。これらのうち高温半田を
用いた場合、発生する応力は共晶半田を用いた場合のそ
れよりも大きいため、接着強度劣化の度合いも大きくな
る。端子電極と誘電体の接着は導体ペ−スト中に添加さ
れる無機結合剤と誘電体の反応に支配されることから、
無機結合剤に関する提案が種々なされてきた。例えば特
開平1−298090号は、Bi2O3を添加したもので
あるが、この場合、誘電体界面の反応層にはBi2O3添
加特有の針状結晶物が析出し、アンカ−効果等によって
初期強度は大きく向上するものの、応力に対しては非常
に脆く、ヒ−トサイクルによってその反応層部は容易に
破壊されてしまう。また、特開平4−293214号で
は、ガラスフリットの他に種々の金属酸化物を添加して
いるが、これでは半田濡れ性が不十分であるばかりでな
く、銀の焼結が阻害されるため電気的特性が確保できな
い等の欠点がある。
These conductor pastes become terminal electrodes or external conductors by a treatment such as baking on a ceramic element or the like, but their names are properly used depending on the application.
The obtained terminal electrodes and the like are soldered in order to secure electrical connection with other components. The adhesive strength after soldering needs to be sufficiently high both in the initial stage and after the heat cycle test, but the heat cycle test causes deterioration of the adhesive strength. This is because the heat cycle test is a test in which abrupt temperature changes are repeated, so that stress is generated at each interface due to the difference in linear expansion coefficient between the solder, the terminal electrode, and the dielectric. .
In particular, the stress from the solder is large, and this stress destroys the bonded portion between the terminal electrode and the dielectric, so that the bonding strength deteriorates.
In general, eutectic solder and high temperature solder are used together in a process that requires soldering several times. Of these, when high-temperature solder is used, the generated stress is larger than that when eutectic solder is used, so the degree of deterioration in adhesive strength also increases. Since the adhesion between the terminal electrode and the dielectric is governed by the reaction between the inorganic binder added to the conductor paste and the dielectric,
Various proposals have been made regarding inorganic binders. For example, in JP-A-1-298090, Bi2O3 is added. In this case, needle-like crystal substances peculiar to Bi2O3 addition are deposited in the reaction layer at the dielectric interface, and the initial strength is large due to the anchor effect. Although improved, it is very fragile against stress and its reaction layer portion is easily broken by the heat cycle. In addition, in JP-A-4-293214, various metal oxides are added in addition to the glass frit, but this not only causes insufficient solder wettability but also inhibits silver sintering. There are drawbacks such as the inability to secure electrical characteristics.

【0005】[0005]

【発明が解決ようとする課題】本発明はこのような事情
からなされたものであり、接着強度、特にヒ−トサイク
ル後の接着強度が高く、半田濡れ性に優れた端子電極ま
たは外部導体形成に用いられる導体ぺ−ストを提供する
ことを目的とする。
SUMMARY OF THE INVENTION The present invention has been made under these circumstances, and has a high adhesive strength, particularly an adhesive strength after a heat cycle, and a terminal electrode or an outer conductor which is excellent in solder wettability. It is an object of the present invention to provide a conductor paste used in the above.

【0006】[0006]

【課題を解決するための手段】このような目的は、下記
(1)〜(9)の本発明により達成される。
The above objects are achieved by the present invention described in (1) to (9) below.

【0007】(1)AgまたはAgを主成分とする合金
からなる導電材と、ガラスフリット及び金属酸化物を含
む無機結合剤とをビヒクル中に分散した導体ぺ−スト組
成物であって、前記無機結合剤組成が、PbO及び/ま
たはZnOから選ばれる少なくとも1種以上:20〜4
0重量%、 B2O3:6〜20重量%、 SiO2:2〜15重量%、 CuO及び/またはTiO2から選ばれる少なくとも1
種以上:30〜72重量%、であることを特徴とする導
体ペースト組成物。
(1) A conductor paste composition in which a conductive material made of Ag or an alloy containing Ag as a main component and an inorganic binder containing a glass frit and a metal oxide are dispersed in a vehicle. The inorganic binder composition is at least one selected from PbO and / or ZnO: 20 to 4
0% by weight, B2O3: 6 to 20% by weight, SiO2: 2 to 15% by weight, at least 1 selected from CuO and / or TiO2
1 or more: 30 to 72% by weight, a conductor paste composition.

【0008】(2)前記導電材100重量部に対する前
記無機結合剤の含有量が0.5〜15重量部である上記
(1)に記載の導体ペースト組成物。
(2) The conductor paste composition as described in (1) above, wherein the content of the inorganic binder is 0.5 to 15 parts by weight with respect to 100 parts by weight of the conductive material.

【0009】(3)前記無機結合剤中のPbO、B2O
3、及びSiO2はガラスフリットの構成成分であって、
前記導電材100重量部に対する含有量が0.35〜1
0重量部である請求項(1)または(2)に記載の導体
ペ−スト組成物。
(3) PbO and B2O in the inorganic binder
3, and SiO2 are constituents of the glass frit,
Content of 0.35 to 1 with respect to 100 parts by weight of the conductive material
The conductor paste composition according to claim 1, which is 0 part by weight.

【0010】(4)前記ガラスフリットの平均粒径が
0.1〜20μmである上記(1)ないし(3)のいず
れかに記載の導体ペースト組成物。
(4) The conductor paste composition as described in any of (1) to (3) above, wherein the glass frit has an average particle size of 0.1 to 20 μm.

【0011】(5)前記無機結合剤中のCuO及び/ま
たはTiO2がガラス状態ではない金属酸化物であっ
て、前記導電材100重量部に対する含有量が5重量部
以下である上記(1)ないし(4)のいずれかに記載の
導体ぺースト組成物。
(5) CuO and / or TiO2 in the inorganic binder is a metal oxide which is not in a glass state, and the content thereof is 5 parts by weight or less based on 100 parts by weight of the conductive material. The conductor paste composition according to any one of (4).

【0012】(6)前記金属酸化物の平均粒径が0.1
〜20μmである上記(1)ないし(5)に記載の導体
ペースト組成物。
(6) The average particle size of the metal oxide is 0.1.
The conductor paste composition according to any one of (1) to (5) above, having a thickness of 20 μm.

【0013】(7)前記導電材がAg:70〜100重
量%、Pd及び/またはPtから選ばれる少なくとも1
種以上:0〜30重量%、からなる上記(1)ないし
(6)に記載の導体ペ−スト組成物。
(7) The conductive material is at least 1 selected from Ag: 70 to 100% by weight and Pd and / or Pt.
1 or more: 0 to 30% by weight, The conductor paste composition according to the above (1) to (6).

【0014】(8)上記(1)ないし(7)のいずれか
に記載の導体ペースト組成物を焼き付けて形成された端
子電極または外部導体を有することを特徴とする回路基
板。
(8) A circuit board having a terminal electrode or an external conductor formed by baking the conductor paste composition according to any one of (1) to (7).

【0015】(9)上記端子電極または導体の表面にめ
っき膜を有する(8)に記載の回路基板。
(9) The circuit board as described in (8), which has a plating film on the surface of the terminal electrode or the conductor.

【0016】[0016]

【作用】本発明の導体ペースト組成物中のガラスが誘電
体基板中のTiO2等と反応し、基板と端子電極間にP
bTi3O7を主相とする反応層を形成する。これにCu
O等が反応層中に介在することにより反応層強度が向上
し、接着強度、特にヒートサイクルにともなう接着強度
の劣化が抑制される。
The glass in the conductor paste composition of the present invention reacts with TiO2 or the like in the dielectric substrate, and P between the substrate and the terminal electrode.
A reaction layer containing bTi3O7 as a main phase is formed. Cu to this
The presence of O or the like in the reaction layer improves the strength of the reaction layer and suppresses the deterioration of the adhesion strength, especially the adhesion strength due to the heat cycle.

【0017】(具体的構成)以下、本発明の具体的構成
について詳細に説明する。
(Specific Structure) The specific structure of the present invention will be described in detail below.

【0018】本発明の導体ペースト組成物は、導電材と
無機結合剤とを含有する。この無機結合剤は、導電材の
永久バインダとなるものであり、ガラスフリット及び金
属酸化物からなる。
The conductor paste composition of the present invention contains a conductive material and an inorganic binder. This inorganic binder serves as a permanent binder for the conductive material and is composed of glass frit and metal oxide.

【0019】本発明では、無機結合剤組成はPbO及び
/またはZnOから選ばれる少なくとも1種以上:20
〜40重量%、好ましくは25〜38重量%、 B2O3 :6〜20重量%、好ましくは8〜15重量
%、 SiO2 :2〜15重量%、好ましくは4〜10重量
%、 CuO及びTiO2から選ばれる少なくとも1種以上:
30〜72重量%、好ましくは40〜68重量%を含有
する。
In the present invention, the inorganic binder composition is at least one selected from PbO and / or ZnO: 20
-40% by weight, preferably 25-38% by weight, B2O3: 6-20% by weight, preferably 8-15% by weight, SiO2: 2-15% by weight, preferably 4-10% by weight, selected from CuO and TiO2. At least one or more:
It contains 30 to 72% by weight, preferably 40 to 68% by weight.

【0020】また、PbO、CuO、SiO2はガラス
フリットの構成成分であり、CuO及び/またはTiO
2はガラス状態ではない金属酸化物である。なお、この
無機結合剤は実質的にBi酸化物及びMn酸化物を含有
しない。
Further, PbO, CuO, and SiO2 are constituent components of the glass frit, and CuO and / or TiO
2 is a metal oxide which is not in a glass state. This inorganic binder contains substantially no Bi oxide or Mn oxide.

【0021】無機結合剤組成の限定理由は下記のとおり
である。
The reasons for limiting the composition of the inorganic binder are as follows.

【0022】PbOが前記範囲未満となるとAgの焼結
性が低下するため、良好な導電性が得られなくなる。ま
た、PbOが前記範囲を越えるとAgの焼き付け後に電
極表面にガラス浮きが生じやすくなって半田濡れ性が低
下する。なお、PbOの一部または全部がZnOに置換
されてもよい。この場合でも効果は同様であるが、特に
実施例において述べるめっき処理後の引張強度の向上に
有効である。ただし、PbOを含有する場合、特に半田
濡れ性が良好になるために、通常めっき処理を施さない
端子電極等に用いられることが多い。
When PbO is less than the above range, the sinterability of Ag is lowered, and good conductivity cannot be obtained. Further, when PbO exceeds the above range, glass float easily occurs on the electrode surface after baking Ag, and the solder wettability deteriorates. Note that part or all of PbO may be replaced with ZnO. Even in this case, the effect is the same, but it is particularly effective in improving the tensile strength after the plating treatment described in the examples. However, when PbO is contained, it is often used for a terminal electrode or the like that is not usually plated, because solder wettability becomes particularly good.

【0023】B2O3が前記範囲未満となるとガラス化が
困難となり、前記範囲を超えるとガラスの軟化点が低く
なりすぎ、ガラス成分が基板内へ過剰に拡散するために
十分な接着強度が得られなくなる。
If B2O3 is less than the above range, vitrification becomes difficult, and if it exceeds the above range, the softening point of the glass becomes too low and the glass component excessively diffuses into the substrate, so that sufficient adhesive strength cannot be obtained. .

【0024】SiO2が前記範囲未満となるとガラス化
が困難となり、前記範囲を超えるとガラスの軟化点が高
くなりすぎ、焼き付け後に電極中にガラスが残留してガ
ラス浮きが生じるために半田濡れ性が劣化する。このよ
うな組成を有するガラス軟化点は、400〜650℃程
度である。
When SiO2 is less than the above range, vitrification becomes difficult, and when it exceeds the above range, the softening point of the glass becomes too high, and the glass remains in the electrode after baking to cause glass float, resulting in solder wettability. to degrade. The glass softening point having such a composition is about 400 to 650 ° C.

【0025】導体ぺ−スト組成物のガラスフリットの含
有量は、導電材100重量部に対し0.5〜15重量
%、特に1〜8重量%とすることが望ましい。ガラスフ
リットの含有量が前記範囲未満となると十分な接着強度
が得られず、前記範囲を超えると焼き付け後に電極表面
にガラス浮きが生じ、半田濡れ性が劣化する。
The content of the glass frit in the conductor paste composition is preferably 0.5 to 15% by weight, more preferably 1 to 8% by weight, based on 100 parts by weight of the conductive material. If the content of the glass frit is less than the above range, sufficient adhesive strength cannot be obtained, and if it exceeds the above range, the glass floats on the electrode surface after baking and the solder wettability deteriorates.

【0026】ガラスフリットの平均粒径は、0.1〜2
0μmであることが好ましい。
The average particle size of the glass frit is 0.1-2.
It is preferably 0 μm.

【0027】無機結合剤には、ガラスフリットの他、ガ
ラス状態ではない金属酸化物等の無機粒子を含む。この
ような無機粒子としては、CuO及び/またはTiO2
の1種以上が挙げられるが、これらのうち、特にCuO
が好ましい。CuOは反応生成物であるPbTi3O7の
焼結助剤及び強度強化剤としてはたらき、反応生成物の
強度を向上させる。
The inorganic binder includes, in addition to glass frit, inorganic particles such as metal oxides which are not in a glass state. Such inorganic particles include CuO and / or TiO2
Among these, CuO is particularly preferable.
Is preferred. CuO acts as a sintering aid and a strength enhancer for PbTi3O7 which is a reaction product, and improves the strength of the reaction product.

【0028】これらの無機粒子の含有量は、導電材10
0重量部に対し5重量部以下とすることが好ましい。含
有量が5重量部を超えると、無機粒子自体が素地内へ拡
散しないために端子電極中に残留し、電極表面にこれが
浮き出しまう。このために半田濡れ性が劣化する。
The content of these inorganic particles depends on the conductive material 10.
It is preferably 5 parts by weight or less with respect to 0 parts by weight. When the content exceeds 5 parts by weight, the inorganic particles themselves do not diffuse into the matrix and thus remain in the terminal electrode, and the inorganic particles float on the electrode surface. Therefore, the solder wettability is deteriorated.

【0029】これら無機粒子の平均粒径は、0.1〜2
0μmであることが好ましい。
The average particle size of these inorganic particles is 0.1 to 2
It is preferably 0 μm.

【0030】なお、Bi酸化物を含有した場合、誘電体
基板中のTiO2等と反応し、端子電極と基板間に脆弱
なBi2Ti2O7層が析出するために、接着強度の劣化
が生じる。さらにこれにMn酸化物を添加すると、この
層の生成が顕著になり接着強度の劣化が激しくなる。
When Bi oxide is contained, it reacts with TiO2 or the like in the dielectric substrate, and a fragile Bi2Ti2O7 layer is deposited between the terminal electrode and the substrate, so that the adhesive strength is deteriorated. Furthermore, when Mn oxide is added to this, the formation of this layer becomes remarkable, and the adhesive strength deteriorates severely.

【0031】本発明では、マイクロ波帯で使用する場
合、あるいは高Q特性を得るような場合、Agを導電材
として用いる。またそれ以外に使用する場合は、Pd及
び/またはPtが含まれていても良い。この時、これら
の含有量は30重量%以下にする必要がある。前記範囲
を超えると導体抵抗が大きくなりすぎて、通常用いられ
る回路の電気的特性を満足しないばかりでなく、半田濡
れ性が極度に低下する。これら 導電材粒子の平均粒径
は、0.01〜10μm程度とすることが好ましい。そ
の理由は、平均粒径が0.01μm未満であると収縮率
が大きくなりすぎ、また10μmを超えると導体ぺ−ス
ト組成物の印刷性、分散性が悪くなるからである。
In the present invention, Ag is used as the conductive material when used in the microwave band or when high Q characteristics are obtained. When used for other purposes, it may contain Pd and / or Pt. At this time, the content of these should be 30% by weight or less. If it exceeds the above range, the conductor resistance becomes too large, and not only the electrical characteristics of the circuit usually used are not satisfied, but also the solder wettability is extremely lowered. The average particle size of these conductive material particles is preferably about 0.01 to 10 μm. The reason is that if the average particle diameter is less than 0.01 μm, the shrinkage ratio becomes too large, and if it exceeds 10 μm, the printability and dispersibility of the conductor paste composition deteriorate.

【0032】導電材および無機結合剤が分散されるビヒ
クルは、エチルセルロ−ス、ニトロセルロ−ス、アクリ
ル系樹脂等のバインダ−、テルピネオ−ル、ブチカルビ
ト−ル等の溶剤、その他分散剤や活性剤等から必要に応
じて適宜選択される。
The vehicle in which the conductive material and the inorganic binder are dispersed is a binder such as ethyl cellulose, nitrocellulose, acrylic resin, a solvent such as terpineol, butycarbitol, and other dispersants and activators. Are appropriately selected from the above.

【0033】なお、一般に、導体ぺ−スト組成物中のビ
ヒクルの含有率は、10〜70重量%程度である。
Generally, the content of the vehicle in the conductor paste composition is about 10 to 70% by weight.

【0034】本発明の導体ぺ−スト組成物は、導電材粒
子と無機結合剤とを混合し、これにバインダ−、溶剤等
のビヒクルを加え、これらを混練してスラリ−化するこ
とにより製造される。導体ぺ−スト組成物の粘度は、3
万〜30万cps(センチポイズ)程度に調製しておくの
がよい。
The conductor paste composition of the present invention is prepared by mixing conductive material particles and an inorganic binder, adding a vehicle such as a binder and a solvent, and kneading these to form a slurry. To be done. The viscosity of the conductor paste composition is 3
It is recommended to prepare about 10,000 to 300,000 cps (centipoise).

【0035】本発明の導体ペースト組成物は、誘電体基
板の端子電極ないし外部導体に使用される。また、全体
または一部にディッピング等によって電極を形成する円
筒状の誘電体にも用いることができる。
The conductor paste composition of the present invention is used for a terminal electrode of a dielectric substrate or an outer conductor. It can also be used for a cylindrical dielectric body in which electrodes are formed entirely or partially by dipping or the like.

【0036】なお、通常、めっきを行わない端子電極ま
たは外部導体として使用するが、めっきも行うことがで
きる。めっきは通常Cuめっき膜、Niめっき膜、Sn
めっき膜あるいはSn−Pb(半田)めっき膜の順に形
成される。Cu及びNiめっき膜は端子電極のAg喰わ
れを防止するために設けられる。ただしCuめっき膜は
必要に応じて適宜用いられる。また、SnあるいはSn
−Pbめっき膜は、半田濡れ性及び半田によるAg喰わ
れを改善するために設けられる。
Although it is usually used as a terminal electrode or an external conductor which is not plated, plating can also be carried out. Plating is usually Cu plating film, Ni plating film, Sn
The plating film or the Sn-Pb (solder) plating film is formed in this order. The Cu and Ni plating films are provided to prevent the terminal electrode from being Ag-eaten. However, the Cu plating film is appropriately used if necessary. Also, Sn or Sn
The -Pb plated film is provided to improve solder wettability and Ag erosion by solder.

【0037】マイクロ波帯用の誘電体共振子及びフィル
タ等に用いられる誘電体基板の誘電率は10〜100程
度であり、Mg−Ti酸化物、Sr−Ti酸化物、Ba
−Ti酸化物等を主成分とし、必要に応じて各種金属酸
化物を添加することによって所望の誘電率を得る。本発
明の導体ペ−スト組成物はいずれの誘電体基板にも適合
する。本発明の導体ペ−スト組成物は、マイクロ波帯用
の誘電体共振子及びフィルタ等に用いられる誘電体基板
の端子電極または外部導体として用いられるほか、全体
または一部にディッピング等によって電極を形成する円
筒状の誘電体、誘電体チップ、チップインダクタ、チッ
プコンデンサ等のチップ部品、半導体集積回路素子、ダ
イオ−ド等の各種素子の表面実装部品を載せる配線基
板、ガラスセラミックス多層基板等の外部導体に適応す
ることもできる。ただし、マイクロ波帯用の誘電体共振
子及びフィルタ等に用いられる誘電体基板に形成する端
子電極または外部導体には、ヒ−トサイクル後にも強固
な接着性が要求されるので、本発明の導体ペ−スト組成
物は特にマイクロ波帯に使用する誘電体の端子電極また
は外部導体形成に好適である。
The dielectric constant of a dielectric substrate used for microwave resonators, filters and the like is about 10 to 100, and Mg-Ti oxide, Sr-Ti oxide and Ba are used.
-A desired dielectric constant is obtained by using Ti oxide as a main component and adding various metal oxides as necessary. The conductor paste composition of the present invention is compatible with any dielectric substrate. INDUSTRIAL APPLICABILITY The conductor paste composition of the present invention is used as a terminal electrode or an outer conductor of a dielectric substrate used for a dielectric resonator and a filter for a microwave band, and also an electrode by dipping or the like in whole or in part. External parts such as a wiring board for mounting surface mount parts of various elements such as cylindrical dielectrics, dielectric chips, chip inductors, chip capacitors, etc., semiconductor integrated circuit elements, diodes, etc. It can also be adapted to a conductor. However, since the terminal electrode or the external conductor formed on the dielectric substrate used for the dielectric resonator and filter for the microwave band is required to have strong adhesiveness even after the heat cycle, the present invention The conductor paste composition is particularly suitable for forming a terminal electrode or outer conductor of a dielectric used in the microwave band.

【0038】[0038]

【実施例】以下、本発明の具体的実施例について説明す
る。
EXAMPLES Specific examples of the present invention will be described below.

【0039】(実施例1) 導体ペースト組成物の調製 導電材、無機結合剤及びビヒクルを混練し、導体ペース
ト組成物を調製した。導電材にはAg(平均粒径0.2
μm)を、無機結合剤にはガラスフリット(平均粒径
0.7μm)及び金属酸化物(平均粒径0.2μm)
を、ビヒクルにはエチルセルロース系樹脂及び高沸点溶
剤(テルピネオール)を用いた。無機結合剤組成比及び
導電材100重量部に対する無機結合剤の含有量を表1
に示す。なお、ビヒクルは導電材100重量部に対し2
0〜40重量部加えた。
(Example 1) Preparation of conductor paste composition A conductor paste composition was prepared by kneading a conductive material, an inorganic binder and a vehicle. Ag (average particle size 0.2
glass frit (average particle size 0.7 μm) and metal oxide (average particle size 0.2 μm) as the inorganic binder.
The vehicle used was an ethyl cellulose resin and a high boiling point solvent (terpineol). Table 1 shows the composition ratio of the inorganic binder and the content of the inorganic binder with respect to 100 parts by weight of the conductive material.
Shown in. The vehicle is 2 parts for 100 parts by weight of the conductive material.
0-40 parts by weight was added.

【0040】[0040]

【表1】 [Table 1]

【0041】誘電体基板にスクリーン印刷法により、導
体ぺ−スト組成物を、縮率25%にて、焼き付け後の寸
法が2mm×2mm、膜厚15±2μmのパッドになる
ように印刷し、空気中において900℃で焼き付けた。
なお誘電体基板はBa−Ti−Nd−Bi酸化物で構成
されているものを用いた。端子電極の初期及びヒートサ
イクル後の接着強度、端子電極の半田濡れ性を以下のよ
うにして調べた。
The conductor paste composition was printed on the dielectric substrate by a screen printing method at a reduction ratio of 25% so that the size of the pad after baking was 2 mm × 2 mm and the film thickness was 15 ± 2 μm. Baking at 900 ° C. in air.
The dielectric substrate used was a Ba-Ti-Nd-Bi oxide. The adhesive strength of the terminal electrode at the initial stage and after the heat cycle, and the solder wettability of the terminal electrode were examined as follows.

【0042】(a)接着強度試験 初期強度はパッドの中心部に0.6mmφのリード線を
半田付けし、垂直方向に引張り試験機を用いて20mm
/minの速度で引っ張り、破壊した時の荷重を読ん
だ。またヒ−トサイクル後の強度は半田でリ−ド線を付
着させた状態でヒートサイクル試験を行った後、同様に
引張り試験を行い、破壊した時の荷重を読んだ。ヒート
サイクル試験は下限温度−40℃、上限温度+85℃、
各温度における保持時間30分の条件で100サイクル
行った。なお半田は共晶半田と高温半田の2種類用意し
た。半田の組成及び溶融温度を表2に示す。
(A) Adhesive strength test Initial strength was 20 mm measured by soldering a 0.6 mmφ lead wire to the center of the pad and using a tensile tester in the vertical direction.
The load at the time of breaking was read by pulling at a speed of / min. For the strength after heat cycle, a heat cycle test was conducted with a lead wire attached by solder, and then a tensile test was conducted in the same manner to read the load at breakage. The heat cycle test has a lower limit temperature of -40 ° C, an upper limit temperature of + 85 ° C
100 cycles were carried out under the condition of holding time of 30 minutes at each temperature. Two kinds of solder, eutectic solder and high temperature solder, were prepared. Table 2 shows the composition and melting temperature of the solder.

【0043】[0043]

【表2】 [Table 2]

【0044】(b)半田濡れ性 共晶半田の場合235℃の溶融半田に、高温半田の場合
280℃の溶融半田に2秒間浸漬し、パッドの濡れ面積
率により評価した。各試験の結果を表3に示す。
(B) Solder wettability The eutectic solder was dipped in the molten solder at 235 ° C. and the high temperature solder was dipped in the molten solder at 280 ° C. for 2 seconds, and the wetted area ratio of the pad was evaluated. The results of each test are shown in Table 3.

【0045】[0045]

【表3】 [Table 3]

【0046】(実施例2)実施例1で得られた端子電極
にNi及びSnめっき膜を形成し、初期及びヒ−トサイ
クル後の接着強度、及び半田濡れ性の評価を行った。導
電材100重量部に対する無機結合剤の含有量を表4に
示す。
(Example 2) Ni and Sn plating films were formed on the terminal electrodes obtained in Example 1, and the adhesive strength and solder wettability at the initial stage and after the heat cycle were evaluated. Table 4 shows the content of the inorganic binder with respect to 100 parts by weight of the conductive material.

【0047】[0047]

【表4】 [Table 4]

【0048】各試験の結果を表5に示す。The results of each test are shown in Table 5.

【0049】[0049]

【表5】 [Table 5]

【0050】(実施例3)本発明によって得られた導体
ペ−ストを用いて、端子電極または外部導体を誘電体基
板上に形成した結果、半だ濡れ性に優れ、かつ初期及び
ヒ−トサイクル後の基板との接着強度も十分な極めて信
頼性の高い回路基板ができた。
(Embodiment 3) A terminal electrode or an outer conductor is formed on a dielectric substrate by using the conductor paste obtained according to the present invention. As a result, the semi-wetting property is excellent and the initial and heat are obtained. An extremely reliable circuit board having sufficient adhesion strength with the board after the cycle was obtained.

【0051】上記結果から、本発明の効果が明らかであ
る。
From the above results, the effect of the present invention is clear.

【0052】[0052]

【発明の効果】本発明の導体ぺ−スト組成物を用いてマ
イクロ波帯用の誘電体共振子及びフィルタ等に用いられ
る誘電体基板等の端子電極または外部導体を形成すれ
ば、半田濡れ性が良好で、かつ初期及びヒートサイクル
後の基板との接着強度も十分な極めて信頼性の高い素子
や基板が実現する。
EFFECT OF THE INVENTION If the conductor paste composition of the present invention is used to form a terminal electrode or an external conductor of a dielectric substrate used for a microwave resonator, a dielectric resonator, a filter, etc., solder wettability is obtained. It is possible to realize an element or a substrate having good reliability and having a sufficiently high adhesive strength with the substrate in the initial stage and after the heat cycle.

Claims (9)

【特許請求の範囲】[Claims] 【請求項1】 AgまたはAgを主成分とする合金から
なる導電材と、ガラスフリット及び金属酸化物を含む無
機結合剤とをビヒクル中に分散した導体ぺ−スト組成物
であって、 前記無機結合剤組成が、 PbO及び/またはZnOから選ばれる少なくとも一種
以上:20〜40重量%、 B2O3 :6〜20重量%、 SiO2 :2〜15重量%、 CuO及び/またはTiO2から選ばれる少なくとも1
種以上:30〜72重量%、であることを特徴とする導
体ぺ−スト組成物。
1. A conductor paste composition in which a conductive material made of Ag or an alloy containing Ag as a main component and an inorganic binder containing a glass frit and a metal oxide are dispersed in a vehicle. The binder composition is at least one selected from PbO and / or ZnO: 20 to 40% by weight, B2O3: 6 to 20% by weight, SiO2: 2 to 15% by weight, at least 1 selected from CuO and / or TiO2.
1 or more: 30 to 72% by weight, a conductor paste composition.
【請求項2】 前記導電材100重量部に対する前記無
機結合剤の含有量が0.5〜15重量部である請求項1
に記載の導体ぺ−スト組成物。
2. The content of the inorganic binder with respect to 100 parts by weight of the conductive material is 0.5 to 15 parts by weight.
The conductor paste composition described in 1.
【請求項3】 前記無機結合剤中のPbO、B2O3及び
SiO2はガラスフリットの構成成分であって、前記導
電材100重量部に対する含有量が0.35〜10重量
部である請求項1または2に記載の導体ペ−スト組成
物。
3. PbO, B2O3 and SiO2 in the inorganic binder are constituents of the glass frit, and the content thereof is 0.35 to 10 parts by weight relative to 100 parts by weight of the conductive material. The conductor paste composition according to item 1.
【請求項4】 前記ガラスフリットの平均粒径が0.1
〜20μmである請求項1ないし3のいずれかに記載の
導体ぺ−スト組成物。
4. The average particle size of the glass frit is 0.1.
The conductor paste composition according to any one of claims 1 to 3, having a thickness of -20 µm.
【請求項5】 前記無機結合剤中のCuO及び/または
TiO2がガラス状態でない金属酸化物であって、前記
導電材100重量部に対する含有量が5重量部以下であ
る請求項1ないし4のいずれかに記載の導体ぺ−スト組
成物。
5. The CuO and / or TiO2 in the inorganic binder is a metal oxide which is not in a glass state, and the content thereof is 5 parts by weight or less with respect to 100 parts by weight of the conductive material. The conductor paste composition as described in 1.
【請求項6】 前記金属酸化物の平均粒径が0.1から
20μmである請求項1ないし5に記載の導体ペ−スト
組成物。
6. The conductor paste composition according to claim 1, wherein the average particle size of the metal oxide is 0.1 to 20 μm.
【請求項7】 前記導電材がAg:70〜100重量
%、Pd及び/またはPtから選ばれる少なくとも一種
以上:0〜30重量%、からなる請求項1ないし6に記
載の導体ペ−スト組成物。
7. The conductive paste composition according to claim 1, wherein the conductive material comprises Ag: 70 to 100% by weight, at least one selected from Pd and / or Pt: 0 to 30% by weight. object.
【請求項8】 請求項1ないし7のいずれかに記載の導
体ぺ−スト組成物を焼き付けて形成された端子電極また
は外部導体を有することを特徴とする回路基板。
8. A circuit board having a terminal electrode or an external conductor formed by baking the conductor paste composition according to claim 1. Description:
【請求項9】 前記端子電極または外部導体の表面にめ
っき膜を有する請求項8に記載の回路基板。
9. The circuit board according to claim 8, wherein a plating film is provided on a surface of the terminal electrode or the outer conductor.
JP18361793A 1993-07-26 1993-07-26 Conductive paste composition and circuit board using conductive paste composition Pending JPH0737420A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18361793A JPH0737420A (en) 1993-07-26 1993-07-26 Conductive paste composition and circuit board using conductive paste composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18361793A JPH0737420A (en) 1993-07-26 1993-07-26 Conductive paste composition and circuit board using conductive paste composition

Publications (1)

Publication Number Publication Date
JPH0737420A true JPH0737420A (en) 1995-02-07

Family

ID=16138919

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18361793A Pending JPH0737420A (en) 1993-07-26 1993-07-26 Conductive paste composition and circuit board using conductive paste composition

Country Status (1)

Country Link
JP (1) JPH0737420A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0977208A2 (en) * 1998-07-28 2000-02-02 Murata Manufacturing Co., Ltd. Conductive paste and glass circuit substrate
EP1534053A2 (en) * 2003-11-19 2005-05-25 E.I. du Pont de Nemours and Company Thick film conductor paste compositions for LTCC tape
JP2006344582A (en) * 2005-04-25 2006-12-21 E I Du Pont De Nemours & Co Thick film conductor paste composition for ltcc tape in microwave application
JP2014107540A (en) * 2012-11-26 2014-06-09 Samsung Electro-Mechanics Co Ltd Multilayer ceramic electronic component
CN110405379A (en) * 2018-04-27 2019-11-05 哈尔滨工业大学 A kind of Ag-CuO-B2O3Its sapphire method of connection of solder, preparation method and utilization

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0977208A2 (en) * 1998-07-28 2000-02-02 Murata Manufacturing Co., Ltd. Conductive paste and glass circuit substrate
JP2000048643A (en) * 1998-07-28 2000-02-18 Murata Mfg Co Ltd Conductive paste and glass circuit substrate
EP0977208A3 (en) * 1998-07-28 2000-10-18 Murata Manufacturing Co., Ltd. Conductive paste and glass circuit substrate
US6355187B1 (en) 1998-07-28 2002-03-12 Murata Manufacturing Co., Ltd. Conductive paste and glass circuit substrate
EP1534053A2 (en) * 2003-11-19 2005-05-25 E.I. du Pont de Nemours and Company Thick film conductor paste compositions for LTCC tape
EP1534053A3 (en) * 2003-11-19 2008-02-20 E.I. du Pont de Nemours and Company Thick film conductor paste compositions for LTCC tape
JP2006344582A (en) * 2005-04-25 2006-12-21 E I Du Pont De Nemours & Co Thick film conductor paste composition for ltcc tape in microwave application
JP2014107540A (en) * 2012-11-26 2014-06-09 Samsung Electro-Mechanics Co Ltd Multilayer ceramic electronic component
CN110405379A (en) * 2018-04-27 2019-11-05 哈尔滨工业大学 A kind of Ag-CuO-B2O3Its sapphire method of connection of solder, preparation method and utilization
CN110405379B (en) * 2018-04-27 2020-11-13 哈尔滨工业大学 Ag-CuO-B2O3Brazing filler metal, preparation method thereof and method for connecting sapphire by using brazing filler metal

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